CN111192869B - Substrate and display device - Google Patents
Substrate and display device Download PDFInfo
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- CN111192869B CN111192869B CN202010017483.1A CN202010017483A CN111192869B CN 111192869 B CN111192869 B CN 111192869B CN 202010017483 A CN202010017483 A CN 202010017483A CN 111192869 B CN111192869 B CN 111192869B
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- 239000000758 substrate Substances 0.000 title claims abstract description 120
- 238000000429 assembly Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 description 30
- 230000035882 stress Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 206010011469 Crying Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Abstract
The application provides a substrate and a display device. The substrate is used for receiving the plurality of micro-components in the carrier plate and comprises a plate body, a first conductive bump and a second conductive bump. The plate body is provided with a first surface, a transfer area is defined on the first surface, and the transfer area is defined with a central position and an edge position. The first conductive bump is disposed at the center and has a first volume. The second conductive bump is disposed at the edge position and has a second volume. Wherein the first volume is different from the second volume.
Description
Technical Field
The present application relates to a substrate and a display device, and more particularly, to a substrate for receiving a plurality of micro-modules and a display device including a plurality of micro-modules.
Background
When manufacturing a micro light emitting diode (micro LED) display, it is necessary to form a plurality of micro LEDs on one substrate (e.g., a temporary substrate) and then to transfer the micro LEDs to corresponding positions on another substrate (e.g., a temporary substrate or a permanent substrate) in a large scale. However, when the substrate provided with the micro light emitting diode is heated and cooled, the substrate may be warped (warped) due to thermal stress because of different thermal expansion coefficients of various materials. In practice, when the substrate is warped, the micro light emitting diodes on the substrate are driven to displace, so that the micro light emitting diodes are not easy to align with components on another substrate, and the transfer yield is affected.
Disclosure of Invention
In view of the above, the present disclosure provides a substrate capable of receiving a micro device on a carrier with warpage more efficiently.
The application provides a substrate for receiving a plurality of micro-components in a carrier. The substrate comprises a plate body, a first conductive bump and a second conductive bump. The plate body is provided with a first surface, at least one transfer area is defined on the first surface, and the transfer area is defined with a central position and an edge position. The first conductive bump is disposed at the center and has a first volume. The second conductive bump is disposed at the edge position and has a second volume. Wherein the first volume is different from the second volume.
In some embodiments, the first conductive bump may have a first thickness, and the second conductive bump may have a second thickness, and when the first volume is smaller than the second volume, the first thickness is smaller than the second thickness. The first conductive bump may have a first contact area on the first surface, and the second conductive bump may have a second contact area on the first surface, where the first contact area and the second contact area are substantially the same.
In some embodiments, the first conductive bump may have a first contact area on the first surface, and the second conductive bump may have a second contact area on the first surface, wherein the first contact area is smaller than the second contact area when the first volume is smaller than the second volume. Here, the first conductive bump may have a first thickness, and the second conductive bump may have a second thickness, the first thickness being substantially the same as the second thickness. In addition, the substrate may further include another first conductive bump, two adjacent first conductive bumps are separated by a first distance, the adjacent first conductive bumps and the second conductive bumps are separated by a second distance, and when the first volume is smaller than the second volume, the first distance is greater than the second distance.
In some embodiments, the first conductive bump may have a first thickness, and the second conductive bump may have a second thickness, and when the first volume is greater than the second volume, the first thickness is greater than the second thickness. The first conductive bump may have a first contact area on the first surface, and the second conductive bump may have a second contact area on the first surface, where the first contact area and the second contact area are substantially the same.
In some embodiments, the first conductive bump may have a first contact area on the first surface, and the second conductive bump may have a second contact area on the first surface, wherein the first contact area is larger than the second contact area when the first volume is larger than the second volume. Here, the first conductive bump may have a first thickness, and the second conductive bump may have a second thickness, the first thickness being substantially the same as the second thickness. In addition, the substrate may further include another first conductive bump, two adjacent first conductive bumps are separated by a first distance, the adjacent first conductive bumps and the second conductive bumps are separated by a second distance, and when the first volume is larger than the second volume, the first distance is smaller than the second distance.
The application also provides a substrate for receiving the plurality of micro-modules in the carrier, the substrate comprises a plate body, a first conductive bump and a second conductive bump. The plate body is provided with a first surface, at least one transfer area is defined on the first surface, and a central point is defined in the transfer area. The first conductive bump is disposed in the transfer region and has a first cross-sectional shape. The second conductive bump is arranged in the transfer area and has a second cross-sectional shape, the first cross-sectional shape is different from the second cross-sectional shape, and the distance between the first conductive bump and the central point is smaller than the distance between the second conductive bump and the central point.
In some embodiments, the first conductive bump has a first volume and the second conductive bump has a second volume, and the first volume may be substantially the same as the second volume. The first conductive bump may have a first thickness, the second conductive bump may have a second thickness, the first thickness is smaller than the second thickness, the first surface of the first conductive bump may have a first contact area, the first surface of the second conductive bump may have a second contact area, and the first contact area is larger than the second contact area. In addition, the first conductive bump may have a first thickness, the second conductive bump may have a second thickness, the first thickness may also be greater than the second thickness, and the first conductive bump may have a first contact area on the first surface, the second conductive bump may have a second contact area on the first surface, and the first contact area is smaller than the second contact area. In another aspect, the first conductive bump may have a first young's modulus and the second conductive bump may have a second young's modulus, wherein the first young's modulus is greater than the second young's modulus.
The application also provides a display device, wherein the display device is provided with a substrate, and the substrate can more efficiently receive the micro-assembly on the warped carrier plate.
The application provides a display device, and the display device comprises a substrate and a plurality of micro-components. The substrate comprises a plate body, a first conductive bump and a second conductive bump. The plate body is provided with a first surface, at least one transfer area is defined on the first surface, and a central point is defined in the transfer area. The first conductive bump is arranged in the transfer area and has a first volume and a first cross-sectional shape. The second conductive bump is disposed in the transfer region and has a second volume and a second cross-sectional shape, wherein the first volume is different from the second volume or the first cross-sectional shape is different from the second cross-sectional shape. Wherein the distance between the first conductive bump and the central point is smaller than the distance between the second conductive bump and the central point. The plurality of micro-assemblies are correspondingly arranged on the first conductive bumps and the second conductive bumps.
In some embodiments, the bonding areas of the first conductive bump and the second conductive bump respectively corresponding to the plurality of micro-components may be substantially the same. In addition, the first conductive bump and the micro-assembly correspondingly disposed on the substrate have a first height, the second conductive bump and the micro-assembly correspondingly disposed on the substrate have a second height, and the first height may be different from the second height.
To sum up, the application provides a base plate and display device, and the electrically conductive lug of different positions is inequality on the base plate to can correspond the support plate of different warpage shapes. For example, when the carrier board warps in a concave-up manner (smiling face), the conductive bumps at the edge of the substrate may have a larger volume or a larger cross-sectional area. On the contrary, when the carrier board warps in a concave manner (crying face), the conductive bumps at the upper edge of the substrate can correspond to a smaller volume or a smaller cross-sectional area. Therefore, the substrate can receive the micro-module on the warped carrier more efficiently.
Further details regarding other functions and embodiments of the present application are described below with reference to the accompanying drawings.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a substrate corresponding to a concave carrier according to an embodiment of the present application;
FIG. 2A is a schematic top view of a substrate according to another embodiment of the present application;
FIG. 2B is a schematic cross-sectional view along line AA in FIG. 2A;
FIG. 3 is a schematic view illustrating a substrate structure corresponding to a concave carrier according to another embodiment of the present application;
FIG. 4 is a schematic view illustrating a substrate structure corresponding to a concave carrier according to another embodiment of the present application;
FIG. 5 is a schematic view illustrating a substrate structure corresponding to a concave carrier according to another embodiment of the present application;
FIG. 6 is a schematic view illustrating a structure of a substrate corresponding to a recessed carrier according to an embodiment of the present application;
FIG. 7 is a schematic view illustrating a structure of a substrate corresponding to a recessed carrier according to another embodiment of the present application;
fig. 8 is a schematic structural diagram illustrating a substrate corresponding to a recessed carrier according to another embodiment of the present disclosure.
Description of the symbols
1. 2, 3, 4, 5, 6: substrate
10. 20, 30, 40, 50, 60: plate body
10a, 20a, 30a, 40a, 50a, 60 a: first surface
12. 22, 32, 42, 52, 62: first conductive bump
12a, 22a, 32a, 42a, 52a, 62 a: surface of the first conductive bump
14. 24, 34, 44, 54, 64: second conductive bump
14a, 24a, 34a, 44a, 54a, 64 a: surface of the second conductive bump
al, a2, a 3: area of
hl, h2, h 3: thickness of
dl, d 2: distance between two adjacent plates
90: support plate
92. 92a, 92 b: micro-module
94. 94a, 94 b: metal connecting pad
S1: transfer area
Detailed Description
In order to specifically describe the embodiments and achieve the effects of the present application, an embodiment is provided and described below with reference to the drawings.
Referring to fig. 1, fig. 1 is a schematic structural diagram illustrating a substrate corresponding to an upper concave carrier according to an embodiment of the present application. As shown in fig. 1, the substrate 1 disclosed in this embodiment can be used to receive a plurality of micro-modules 92 on a carrier 90. The micro-device 92 may be, for example, a vertical or flip-chip micro-light emitting diode, and some embodiments may be applied to other micro-devices, including micro-integrated circuits, micro-laser diodes, and micro-sensing devices. The carrier 90 may be, for example, a growth substrate or a temporary substrate of the micro-device 92, and the substrate 1 of this embodiment may be a permanent substrate (display panel) or another temporary substrate of the micro-device 92. As shown in fig. 1, the carrier 90 may include a plurality of micro-devices 92, and the micro-devices 92 are disposed on a side of the carrier 90 facing the substrate 1. In one example, the carrier 90 may be a glass carrier, a Sapphire carrier (Sapphire), a silicon carrier (Si) or an alumina carrier (Al) 2 O 3 ) The temporary carrier without the working circuit is not limited in this embodiment.
The substrate 1 includes a board body 10, a plurality of first conductive bumps 12 and a plurality of second conductive bumps 14, wherein the board body 10 may be a Complementary Metal-Oxide-Semiconductor (CMOS) substrate, a Low Temperature Poly-silicon (LTPS) substrate, a Thin Film Transistor (TFT) substrate or other substrates having an operating circuit, which is not limited in this embodiment. Here, the board body 10 may have a first surface 10a, the first surface 10a faces the carrier 90, and the first conductive bump 12 and the second conductive bump 14 are disposed on the first surface 10 a. In practice, the first conductive bump 12 and the second conductive bump 14 are respectively used to connect to a metal pad (pad)94, and the first conductive bump 12 and the second conductive bump 14 may be disposed in a specific range of the first surface 10a, such as a transfer area in the first surface 10 a. In practice, the substrate 1 of the present embodiment may become a display panel or a partial display device after receiving the plurality of micro-modules 92. In other words, the display device may include a plurality of micro-components 92, and the micro-components 92 are respectively disposed on the corresponding first conductive bumps 12 and the second conductive bumps 14.
For example, referring to fig. 2A and fig. 2B together, fig. 2A is a top view of a substrate according to another embodiment of the present application, and fig. 2B is a schematic cross-sectional view along line AA of fig. 2A. As shown, a plurality of first conductive bumps 12 and a plurality of second conductive bumps 14 may be disposed on the first surface 10a, and the first conductive bumps 12 and the second conductive bumps 14 may be divided into a plurality of groups, each of which may be a transfer region. In other words, the first surface 10a may include a plurality of transfer regions, such as the transfer region S1 shown in fig. 2A, so that the first surface 10a may receive the micro-assembly 92 at different transfer regions in a time when transferring the micro-assembly 92. Of course, it is also possible that the first surface 10a only corresponds to one transfer area, that is, the transfer area may be a part or all of the first surface 10a, and the embodiment is not limited.
In one example, the transfer region may define a center position and an edge position, the first conductive bump 12 may be disposed at the center position, and the second conductive bump 14 may be disposed at the edge position. For example, assuming that the transition area is a rectangle, the edge position may be relatively closer to the periphery of the rectangle, and the center position may be a position relatively closer to the center point of the rectangle. In other words, the first conductive bump 12 is closer to the center point of the transfer region, and the second conductive bump 14 is farther from the center point of the transfer region. The shape or area of the transfer region is not limited in this embodiment, and the transfer region may be rectangular, circular, triangular or other suitable geometric shapes. In practice, since the micro-devices 92 on the carrier 90 are regularly arranged, in order to receive the micro-devices 92, the first conductive bumps 12 and the second conductive bumps 14 are generally arranged corresponding to the micro-devices 92.
However, conventionally, when transferring the micro-devices 92 disposed on the carrier 90, some practical problems may be encountered to affect the transfer yield. One problem is that the carrier 90 may slightly warp during the heating and heat dissipation processes, which may cause the position of the micro-devices 92 on the carrier 90 to change or the arrangement spacing of the micro-devices to be different. Common warpage of the carrier plate 90 is, for example, a concave-up warpage, which means that the central portion of the carrier plate 90 is closer to the plate body 10, and the edge portion is farther from the plate body 10. The concave warpage is the opposite, meaning that the central portion of the carrier plate 90 is farther away from the plate body 10, while the edge portions are closer to the plate body 10. Conventionally, since the micro-devices 92 on the carrier 90 may not be located on the same horizontal plane due to the warpage of the carrier 90, for example, in the case of a concave-up warped carrier 90, the micro-devices 92 near the center of the carrier 90 are lower. Since the conductive bumps of the conventional substrate are the same, when the carrier 90 is pressed against the conventional substrate, the tightness of the connection between the metal pads 94 and the conductive bumps of the micro-assembly 92 at different positions on the carrier 90 will be different. Such as the micro-module 92 near the center of the carrier 90, the metal pads 94 are connected with the conductive bumps with high tightness. In contrast, the metal pads 94 of the micro-module 92 near the edge of the carrier 90 are connected to the conductive bumps less tightly. As a result, the conventional substrate may cause a problem of uneven conductivity of each of the micro-devices 92, and even affect the transfer yield.
Unlike the conventional substrate, the present embodiment provides a new substrate 1. Referring to fig. 1, the carrier 90 is warped in a concave manner, and in order to make the substrate 1 more effectively receive the plurality of micro-devices 92 on the carrier 90, the first conductive bumps 12 and the second conductive bumps 14 of the present embodiment are designed to have different volumes due to different positions. It will be understood by those skilled in the art that the volume is related to the area and the height, and the present embodiment exemplifies an example of adjusting the height by a fixed area. In the example of fig. 1, it is assumed that the area of a first surface 12a (first contact area) of the first conductive bump 12 intended to contact the micro-device 92 and the area of a second surface 14a (second contact area) of the second conductive bump 142 intended to contact the micro-device 92 are the same, such as the area a 1. At this time, the thicknesses of the first conductive bump 12 and the second conductive bump 14 are different, for example, the thickness (first thickness) of the first conductive bump 12 is h1, the thickness (second thickness) of the second conductive bump 14 is h2, and the thickness h1 is smaller than the thickness h 2. That is, when the carrier 90 is warped in a concave-up manner, fig. 1 illustrates an example in which the volume (first volume) of the first conductive bump 12 is slightly smaller than the volume (second volume) of the second conductive bump 14.
In view of the above, the carrier 90 of fig. 1 is warped in a concave manner, so that the module 92 near the center of the carrier 90 is closer to the board 10, and the distance between the module 92 near the edge of the carrier 90 and the board 10 is larger. When the carrier plate 90 is pressed against the substrate 1 by an external pressure, the carrier plate 90 gets closer to the plate body 10. At this time, since the second conductive bump 14 of the present embodiment protrudes more than the first conductive bump 12, the first conductive bump 12 and the second conductive bump 14 at different positions can be contacted to the respective metal connecting pads 94 at approximately the same time. As known to those skilled in the art, the volumes of the first conductive bumps 12 and the second conductive bumps 14 may be determined according to the warpage level of the carrier 90, for example, a user may first measure the warpage level of the carrier 90 and then determine the thickness of each of the first conductive bumps 12 and the second conductive bumps 14. In one example, the thickness difference between the middle conductive bump (the first conductive bump 12) and the edge conductive bump (e.g., the second conductive bump 14) is not more than 50%, so as to avoid the yield rate from being reduced due to the large height difference in the manufacturing process. In the substrate 1 of the present embodiment, the first conductive bump 12 and the second conductive bump 14 can have substantially the same connection tightness with the corresponding metal connection pad 94, so that each of the micro-modules 92 has uniform conductivity, thereby improving the transfer yield. In an embodiment not shown, another conductive bump may be included, wherein the thickness and volume of the conductive bumps increase from inside to outside due to the concave warpage.
On the other hand, when the carrier 90 is pressed against the conventional substrate, the conventional substrate may be subjected to uneven stress, which may easily cause damage to the micro-assembly 92 or the substrate, and result in poor transfer yield. As mentioned above, in the case of the conventional substrate, the metal pads 94 are less likely to be connected to the underlying conductive bumps because of the micro-assembly 92 at the edge of the carrier 90. When pressure is applied to the carrier 90 from the outside to press the conventional substrate, in order to ensure that the micro-modules 92 at the edge of the carrier 90 can be transferred, too much pressure may be applied to cause the micro-modules 92 at the center of the carrier 90 to be pushed toward the substrate too much. For example, the metal connection pads 94 of the micro-device 92 located at the center of the carrier 90 may have been over-pressed by the conductive bumps underneath, resulting in damage to the micro-device 92 or the substrate.
The embodiment of fig. 3 proposes another new substrate 2. Referring to fig. 1 and 3, fig. 3 is a schematic structural diagram of a substrate corresponding to an upper concave carrier according to another embodiment of the present application. Similar to the embodiment of fig. 1, the carrier 90 illustrated in fig. 3 is also warped in a concave manner, and the substrate 2 also includes a board body 20, a plurality of first conductive bumps 22 and a plurality of second conductive bumps 24. In order to make the substrate 2 more effectively receive the plurality of micro-devices 92 on the carrier 90, the first conductive bump 22 and the second conductive bump 24 of the present embodiment are designed to have different volumes due to different positions, and the volume (first volume) of the first conductive bump 12 is also slightly smaller than the volume (second volume) of the second conductive bump 14. Unlike the embodiment of fig. 1, fig. 3 assumes that the thickness of first conductive bump 22 (first thickness) is the same as the thickness of second conductive bump 24 (second thickness), e.g., both thicknesses h 1. At this time, the area of the first conductive bump 22 and a first surface 22a (first contact area) that is intended to contact the micro-device 92 may be a1, the area of a second surface 24a (second contact area) that is intended to contact the micro-device 92 of the second conductive bump 24 may be a2, and the contact area a1 is smaller than the contact area a 2.
In view of the above, the carrier 90 of fig. 1 is warped in a concave manner, so that the module 92 near the center of the carrier 90 is closer to the board 10, and the distance between the module 92 near the edge of the carrier 90 and the board 10 is larger. When the carrier plate 90 is pressed toward the substrate 1 by an external pressure, the carrier plate 90 gets closer to the plate body 10. At this time, it should be understood by those skilled in the art that when the metal connection pads 94 contact the first conductive bump 22 and the second conductive bump 24, the stress borne by the first conductive bump 22 should be slightly larger than the stress borne by the second conductive bump 24. However, since the volume of the first conductive bump 22 is smaller, even though the pressure applied from the outside to the carrier 90 is large enough to ensure that the micro-device 92 at the edge of the carrier 90 can be transferred, the first conductive bump 22 can be easily deformed (for example, overflowing between the metal connecting pad 94 and the board 10) to be pressed by the external pressure, so as to prevent the micro-device 92 or the substrate 2 from being damaged by the stress, thereby improving the transfer yield.
In addition, as mentioned above, no matter the conventional substrate is warped in a concave shape or in a concave shape, the micro-devices 92 on the carrier 90 may deviate from the original positions, so that the conductive bumps on the conventional substrate may not be aligned with the micro-devices 92 accurately, resulting in errors in the subsequent transferring and aligning steps. Unlike conventional substrates, fig. 3 also illustrates that the first conductive bumps 22 and the second conductive bumps 24 may be arranged in a non-equally spaced manner. It should be understood by those skilled in the art that since the carrier 90 is shown in fig. 3 as being concave, the micro-devices 92 at the center of the carrier 90 are displaced to the sides to a greater extent, while the micro-devices 92 at the edge of the carrier 90 are displaced to a lesser extent. In order to align the first conductive bump 22 and the second conductive bump 24 with the metal connection pads 94 on the displaced micro-assembly 92, the first conductive bump 22 and the second conductive bump 24 should be disposed at corresponding positions on the board body 20 (or the transfer area). For example, two adjacent first conductive bumps 22 may be separated by a first distance d1, and two adjacent first conductive bumps 22 and second conductive bumps 24 may be separated by a second distance d 2. In the embodiment, the first distance d1 is slightly larger than the second distance d 2. In other words, the conductive bumps closer to the center point of the board body 20 (e.g., the first conductive bumps 22) are arranged apart a little, and the conductive bumps farther from the center point of the board body 20 (e.g., the second conductive bumps 24) are arranged closer together a little.
For convenience of illustration, fig. 1 shows one metal pad (pad)94 on each of the micro-devices 92, but the number of the metal pads 94 is not limited in the present embodiment, and for example, more than two metal pads may be provided on each of the flip-chip micro-devices. Referring to fig. 4, fig. 4 is a schematic structural diagram illustrating a substrate corresponding to a concave carrier according to another embodiment of the present application. As shown in fig. 4, it is assumed that the carrier 90 has a plurality of flip- chip type micro-components 92a and 92b, the micro-component 92a is located at the center of the carrier 90 and has two corresponding metal connection pads 94a, and the micro-component 92b is located at the edge of the carrier 90 and has two corresponding metal connection pads 94 b. In practice, in order to connect the two metal connection pads 94a of the micro-module 92a, two first conductive bumps 22 are disposed at corresponding positions on the board body 20. Similarly, in order to connect the two metal connection pads 94b of the micro-module 92b, two second conductive bumps 24 are disposed at corresponding positions on the board body 20.
For the same reason as the previous embodiment, since the carrier 90 is concave, the micro-device 92a at the center of the carrier 90 is displaced to both sides to a greater extent, and the micro-device 92b at the edge of the carrier 90 is displaced to a lesser extent. Therefore, the distance between two metal connection pads 94a in the module 92a is separated a little, and the distance between two metal connection pads 94b in the module 92b is close. In order to align the two metal connection pads 94a, the distance d3 between the two first conductive bumps 22 is slightly larger than the distance d4 between the two second conductive bumps 24. In other words, the previous embodiment demonstrates that each conductive bump corresponds to a different position of the micro-assembly, and the conductive bumps closer to the center point of the board 20 are spaced at a greater distance, and the conductive bumps further away from the center point of the board 20 are spaced at a smaller distance. In the present embodiment, if the micro-device has a plurality of metal connection pads, a plurality of conductive bumps may correspond to the same micro-device, and the spacing distance between the group of conductive bumps closer to the central point of the board body 20 is larger, and the spacing distance between the group of conductive bumps farther from the central point of the board body 20 is smaller.
On the other hand, the conductive bumps may have the same volume but different shapes due to different positions. Referring to fig. 1 and 5, fig. 5 is a schematic structural diagram of a substrate corresponding to an upper concave carrier according to another embodiment of the present application. Similar to the embodiment of fig. 1, the carrier 90 illustrated in fig. 5 is also warped in a concave manner, and the substrate 3 also includes a board body 30, a plurality of first conductive bumps 32 and a plurality of second conductive bumps 34. In addition, the area (first contact area) of a first surface 32a of the first conductive bump 32, which is intended to contact the micro-device 92, may also be a1, and the thickness (first thickness) of the first conductive bump 32 may also be h 1. Unlike the embodiment of fig. 1, the volumes of the first conductive bump 32 and the second conductive bump 34 may be the same, but have different cross-sectional shapes. For example, the area (second contact area) of a second surface 34a of the second conductive bump 34 of fig. 5, which is intended to contact the micro-device 92, is the area a3, and the thickness (second thickness) of the second conductive bump 34 is h 3. At this time, the area a3 is smaller than the area a1, and the thickness h3 is larger than the thickness h 1. The shape of the second conductive bump 34 is not limited in this embodiment, but as can be seen from fig. 5, the second conductive bump 34 is higher than the first conductive bump 32, and the second conductive bump 34 is narrower than the first conductive bump 32.
In the embodiments of fig. 1 to fig. 5, the Young's moduli of the first conductive bump and the second conductive bump may be designed to be different values, and the Young's moduli of the first conductive bump and the second conductive bump may correspond to different warpage types of the carrier 90. For example, when the carrier 90 is warped in a concave manner, the conductive bumps (e.g., the first conductive bumps) closer to the central point of the board body can be designed to have a smaller young's modulus. Conversely, the young's modulus of the conductive bump (e.g., the second conductive bump) away from the center point of the board body can be designed to be larger. As will be understood by those skilled in the art, the young's modulus is a parameter of the elastic material, and is related to the deformation amount generated when the first conductive bump and the second conductive bump are subjected to the positive stress, and the description thereof is omitted here. In one example, since the young's modulus of the first conductive bump is smaller than the young's modulus of the second conductive bump, the second conductive bump is less likely to deform, and when the carrier is externally pressed, the second conductive bump which is less likely to deform can be used to disperse the stress concentrated on the central point of the board body, so that the stresses borne by the first conductive bump and the second conductive bump are substantially the same, thereby improving the transfer yield.
The above-mentioned examples of fig. 1 to fig. 5 correspond to the embodiment when the carrier plate 90 is warped in a concave-up manner, but the present application is not limited thereto. Referring to fig. 1 and fig. 6, fig. 6 is a schematic structural diagram of a substrate corresponding to a recessed carrier according to an embodiment of the present application. Similar to the embodiment shown in fig. 1, the substrate 4 illustrated in fig. 6 also includes a board body 40, a plurality of first conductive bumps 42 and a plurality of second conductive bumps 44, the carrier 90 also includes a plurality of micro-devices 92, and each micro-device 92 has a metal connection pad 94. Unlike the embodiment of fig. 1, the carrier plate 90 of fig. 6 is warped in a concave manner, i.e., the central portion of the carrier plate 90 is farther from the plate body 40 and the edge portion is closer to the plate body 40. Referring to fig. 6, the carrier 90 is warped in a concave manner, and now in order to make the substrate 4 more effectively receive the plurality of micro-devices 92 on the carrier 90, the first conductive bumps 42 and the second conductive bumps 44 of the present embodiment are opposite to those of fig. 1, i.e., the volume (first volume) of the first conductive bumps 42 is slightly larger than the volume (second volume) of the second conductive bumps 44.
This embodiment also demonstrates an example of a fixed area adjustment height. In the example of fig. 6, the area of a first surface 42a (first contact area) of the first conductive bump 42 intended to contact the micro-device 92 and the area of a second surface 44a (second contact area) of the second conductive bump 44 intended to contact the micro-device 92 are the same, such as the area a 1. At this time, the thicknesses of the first conductive bump 42 and the second conductive bump 44 are different, for example, the thickness (first thickness) of the first conductive bump 42 is h2, the thickness (second thickness) of the second conductive bump 44 is h1, and the thickness h2 is greater than the thickness h 1. Since the first conductive bumps 42 of the present embodiment are more protruded than the second conductive bumps 44, when the carrier 90 is pressed toward the substrate 4 by an external force, the first conductive bumps 42 and the second conductive bumps 44 at different positions can contact the respective metal pads 94 at about the same time. In one example, the first conductive bump 42 and the second conductive bump 44 may also have substantially the same connection tightness with the corresponding metal connection pads 94, so that each of the micro-devices 92 has uniform conductivity, thereby improving the transfer yield. As will be apparent to those skilled in the art, the volumes of the first conductive bump 42 and the second conductive bump 44 may also depend on the warpage of the carrier 90, and the embodiment is not limited thereto. In an embodiment not shown, another conductive bump may be included, wherein the thickness and volume of the conductive bumps increase from outside to inside due to the concave warpage.
In addition, referring to fig. 3 and 7, fig. 7 is a schematic structural diagram of a substrate corresponding to a recessed carrier according to another embodiment of the present application. Similar to the embodiment shown in fig. 3, the substrate 5 illustrated in fig. 7 also includes a board body 50, a plurality of first conductive bumps 52 and a plurality of second conductive bumps 54, the carrier 90 also includes a plurality of micro-devices 92, and each micro-device 92 has a metal connection pad 94. Unlike the embodiment of fig. 3, the carrier plate 90 of fig. 7 is warped in a concave manner, i.e., the central portion of the carrier plate 90 is farther away from the plate body 50 and the edge portion is closer to the plate body 50. Referring to fig. 7, in order to make the substrate 5 more effectively receive the plurality of micro-devices 92 on the carrier 90, the first conductive bump 52 and the second conductive bump 54 of the present embodiment are designed to have different volumes due to different positions, and the volume (first volume) of the first conductive bump 52 is slightly larger than the volume (second volume) of the second conductive bump 54. Unlike the embodiment of fig. 6, fig. 7 assumes that the thickness of the first conductive bump 52 (first thickness) is the same as the thickness of the second conductive bump 54 (second thickness), e.g., both thicknesses h 1. At this time, the area (first contact area) of a first surface 52a of the first conductive bump 52, which is intended to contact the micro-device 92, may be a2, the area (second contact area) of a second surface 54a of the second conductive bump 54, which is intended to contact the micro-device 92, may be a1, and the contact area a2 is larger than the contact area a 1.
In view of the concave warpage of the carrier 90 in fig. 7, the module 92 near the edge of the carrier 90 is closer to the board 50, and the distance between the module 92 near the center of the carrier 90 and the board 50 is larger. When the carrier plate 90 is pressed toward the substrate 5 by an external pressure, the carrier plate 90 gets closer to the plate body 50. At this time, since the volume of the second conductive bump 54 is smaller, even though the pressure applied from the outside to the carrier 90 is large enough to ensure that the micro-device 92 at the central position of the carrier 90 can be transferred, the second conductive bump 54 is more easily deformed (for example, overflows between the metal connecting pad 94 and the board 50) to be pressed by the external pressure, so as to prevent the micro-device 92 or the substrate 5 from being damaged by the stress, thereby improving the transfer yield.
In addition, fig. 7 also demonstrates that the first conductive bumps 52 and the second conductive bumps 54 can be arranged in a non-equally spaced manner. It should be understood by those skilled in the art that since the carrier 90 is shown as being recessed in fig. 7, the micro-devices 92 at the edge of the carrier 90 are displaced to a greater extent, while the micro-devices 92 at the center of the carrier 90 are displaced to a lesser extent. In order to align the first conductive bump 52 and the second conductive bump 54 with the metal connection pad 94 on the displaced micro-assembly 92, the first conductive bump 52 and the second conductive bump 54 should be disposed at corresponding positions on the board body 50 (or the transfer area). For example, two adjacent first conductive bumps 52 may be spaced apart by a first distance d1, and two adjacent first conductive bumps 52 and second conductive bumps 54 may be spaced apart by a second distance d 2. In the present embodiment, the first distance d1 is slightly smaller than the second distance d 2. In other words, the conductive bumps (e.g., the second conductive bumps 54) farther from the center point of the board 50 are arranged apart, and the conductive bumps (e.g., the first conductive bumps 52) farther from the center point of the board 50 are arranged closer together.
On the other hand, the conductive bumps may have the same volume but have different cross-sectional shapes due to different positions. Referring to fig. 5 and 8, fig. 8 is a schematic structural diagram of a substrate corresponding to a recessed carrier according to another embodiment of the present application. Similar to the embodiment of fig. 5, the carrier 90 illustrated in fig. 8 is also warped in a concave manner, and the substrate 6 also includes a board body 60, a plurality of first conductive bumps 62 and a plurality of second conductive bumps 64. In addition, the contact area (second contact area) of the second conductive bump 64 and the first surface 60a may also be a1, and the thickness (second thickness) of the second conductive bump 64 may also be h 1. Unlike the embodiment of fig. 5, the volumes of the first and second conductive bumps 62 and 64 may be the same. For example, the contact area (first contact area) of the first conductive bump 62 and the first surface 60a of fig. 8 is an area a3, and the thickness (first thickness) of the first conductive bump 62 is h 3. At this time, the area a3 is smaller than the area a1, and the thickness h3 is larger than the thickness h 1. The shape of the first conductive bump 62 is not limited in this embodiment, but as can be seen from fig. 8, the first conductive bump 62 is higher than the second conductive bump 64, and the first conductive bump 62 is narrower than the second conductive bump 64.
In the embodiments of fig. 6 to 8, the Young's moduli of the first conductive bump and the second conductive bump may be designed to be different values, and the Young's moduli of the first conductive bump and the second conductive bump may correspond to different warpage types of the carrier 90. For example, when the carrier 90 is warped in a concave manner, the conductive bumps (e.g., the second conductive bumps) farther from the center point of the board body can be designed to have a smaller young's modulus. Conversely, the young's modulus of the conductive bump (e.g., the first conductive bump) near the center point of the board body can be designed to be a larger value. In one example, since the young's modulus of the second conductive bump is smaller than the young's modulus of the first conductive bump, the first conductive bump is less likely to deform, and when a pressure is applied to the carrier from the outside, the first conductive bump which is less likely to deform can be used to disperse the stress concentrated on the edge of the board body, so that the stress borne by the first conductive bump and the stress borne by the second conductive bump are substantially the same.
To sum up, the substrate provided by the application can be used in display equipment, and the conductive bumps of the substrate at different positions can have different designs so as to correspond to carrier plates with different warping shapes. When the carrier board is warped in a concave manner, the conductive bumps at the edge of the substrate may have a larger volume or a larger young's modulus. On the contrary, when the carrier board is warped in a concave manner, the conductive bumps at the edge of the substrate can correspond to a smaller volume or a smaller young modulus. Therefore, the stress borne by the substrate can be uniform, and the contact area of the metal connecting pad on each micro component and the corresponding conductive bump can be approximately the same, so that the micro component on the carrier plate with warping can be received more efficiently, and the transfer yield is improved.
The above-described embodiments and/or implementations are only illustrative of the preferred embodiments and/or implementations for implementing the technology of the present application, and are not intended to limit the implementations of the technology of the present application in any way, and those skilled in the art can make many changes and modifications without departing from the scope of the technology disclosed in the present application, and still should be considered as the technology or implementations substantially the same as the present application.
Claims (21)
1. A substrate, comprising:
a plate body having a first surface, the first surface defining a plurality of transfer areas, each transfer area for receiving a plurality of micro-components at different positions on different levels in a carrier, each transfer area having a first conductive bump and a second conductive bump, and each transfer area defining a center position and an edge position, wherein each micro-component is a micro-led, and the carrier is a temporary carrier without a working circuit;
the first conductive bump is arranged at the central position of one of the transfer areas and is provided with a first volume; and
the second conductive bump is arranged in the same transfer area with the first conductive bump and is far away from the edge position of the central position, and has a second volume;
wherein the first volume is different from the second volume.
2. The substrate of claim 1, wherein the first conductive bump has a first thickness and the second conductive bump has a second thickness, and wherein the first thickness is less than the second thickness when the first volume is less than the second volume.
3. The substrate of claim 2, wherein the first conductive bump has a first contact area on the first surface, and the second conductive bump has a second contact area on the first surface, the first contact area and the second contact area being substantially the same.
4. The substrate of claim 1, wherein the first conductive bump has a first contact area on the first surface, the second conductive bump has a second contact area on the first surface, and the first contact area is smaller than the second contact area when the first volume is smaller than the second volume.
5. The substrate of claim 4, wherein the first conductive bump has a first thickness and the second conductive bump has a second thickness, the first thickness being substantially the same as the second thickness.
6. The substrate of claim 1, further comprising another first conductive bump, wherein two adjacent first conductive bumps are separated by a first distance, and two adjacent first conductive bumps are separated by a second distance, and when the first volume is smaller than the second volume, the first distance is greater than the second distance.
7. The substrate of claim 6, further comprising another second conductive bump, wherein when the first volume is smaller than the second volume, the interval between two adjacent first conductive bumps is larger than the interval between two adjacent second conductive bumps.
8. The substrate of claim 1, wherein the first conductive bump has a first thickness and the second conductive bump has a second thickness, and wherein the first thickness is greater than the second thickness when the first volume is greater than the second volume.
9. The substrate of claim 8, wherein the first conductive bump has a first contact area on the first surface, and the second conductive bump has a second contact area on the first surface, the first contact area and the second contact area being substantially the same.
10. The substrate of claim 1, wherein the first conductive bump has a first contact area on the first surface, the second conductive bump has a second contact area on the first surface, and the first contact area is larger than the second contact area when the first volume is larger than the second volume.
11. The substrate of claim 10, wherein the first conductive bump has a first thickness and the second conductive bump has a second thickness, the first thickness being substantially the same as the second thickness.
12. The substrate of claim 1, further comprising another first conductive bump, wherein two adjacent first conductive bumps are separated by a first distance, and two adjacent first conductive bumps are separated by a second distance, and when the first volume is larger than the second volume, the first distance is smaller than the second distance.
13. The substrate of claim 12, further comprising another second conductive bump, wherein when the first volume is larger than the second volume, the first conductive bump spacing between two adjacent conductive bumps is smaller than the second conductive bump spacing between two adjacent conductive bumps.
14. A substrate, comprising:
a plate body, having a first surface, and being provided with a plurality of first conductive bumps and a plurality of second conductive bumps, wherein the first surface defines a plurality of transfer areas, each transfer area defines a central point, each transfer area is used for receiving a plurality of micro-components located at different positions on different levels in a carrier plate, each micro-component is a micro-light emitting diode, and the carrier plate is a temporary carrier plate without a working circuit;
the first conductive bump is arranged in the transfer area of one of the transfer areas and has a first cross-sectional shape; and
the second conductive bump is arranged in the same transfer area as the first conductive bump and at a position far away from the central point, and has a second cross-sectional shape, wherein the first cross-sectional shape is different from the second cross-sectional shape, and the distance between the first conductive bump and the central point is less than that between the second conductive bump and the central point.
15. The substrate of claim 14, wherein the first conductive bump has a first volume and the second conductive bump has a second volume, the first volume being substantially the same as the second volume.
16. The substrate of claim 15, wherein the first conductive bump has a first thickness and the second conductive bump has a second thickness, the first thickness being less than the second thickness, and the first conductive bump has a first contact area on the first surface and the second conductive bump has a second contact area on the first surface, the first contact area being greater than the second contact area.
17. The substrate of claim 15, wherein the first conductive bump has a first thickness and the second conductive bump has a second thickness, the first thickness being greater than the second thickness, and the first conductive bump has a first contact area on the first surface and the second conductive bump has a second contact area on the first surface, the first contact area being less than the second contact area.
18. The substrate of claim 1 or 14, wherein the first conductive bump has a first young's modulus and the second conductive bump has a second young's modulus, wherein the first young's modulus is greater than the second young's modulus.
19. A display device, comprising:
a substrate, comprising:
the plate body is provided with a first surface, the first surface is defined with a plurality of transfer areas, and each transfer area is defined with a central point;
a first conductive bump disposed in the transfer region of one of the transfer regions, having a first volume and a first cross-sectional shape; and
a second conductive bump disposed in the transfer region of the same transfer region as the first conductive bump and away from the center point, the second conductive bump having a second volume and a second cross-sectional shape, wherein the first volume is different from the second volume or the first cross-sectional shape is different from the second cross-sectional shape;
wherein the distance between the first conductive bump and the center point is smaller than the distance between the second conductive bump and the center point; and
and a plurality of micro-assemblies correspondingly arranged on the first conductive bump and the second conductive bump, wherein each transfer area bears the plurality of micro-assemblies at different positions on different horizontal planes, and each micro-assembly is a micro light-emitting diode.
20. The display apparatus according to claim 19, wherein the bonding areas of the first conductive bump and the second conductive bump respectively corresponding to the micro-devices are substantially the same.
21. The display device as claimed in claim 19, wherein the first conductive bump and the micro-assembly corresponding to the substrate have a first height, and the second conductive bump and the micro-assembly corresponding to the substrate have a second height, the first height being different from the second height.
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| JP2001168239A (en) * | 2000-12-20 | 2001-06-22 | Hitachi Ltd | Ball grid array semiconductor device and its packaging method |
| KR101096039B1 (en) * | 2009-11-09 | 2011-12-19 | 주식회사 하이닉스반도체 | Printed circuit board and semiconductor package by using the same |
| TWI590498B (en) * | 2013-06-03 | 2017-07-01 | 財團法人工業技術研究院 | Electronic device array and method of transfer-bonding electronic devices |
| TWI589031B (en) * | 2014-10-20 | 2017-06-21 | Playnitride Inc | Light-emitting device transfer method |
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| CN1532931A (en) * | 2003-03-24 | 2004-09-29 | 精工爱普生株式会社 | Semiconductor device and producing method, semiconductor package, electronic device and producing method, electronic instrment |
| CN101339942A (en) * | 2007-07-03 | 2009-01-07 | 力成科技股份有限公司 | Semi-conductor encapsulation connecting construction avoiding welding defect induced by warp of substrate |
| CN110100309A (en) * | 2016-12-23 | 2019-08-06 | 株式会社流明斯 | Miniature LED module and its manufacturing method |
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