KR102558788B1 - Method for Manufacturing Betavoltaic Battery and Betavoltaic Battery - Google Patents

Abstract

(A) forming an intrinsic semiconductor layer on a substrate; (B) forming an n-type semiconductor layer on the intrinsic semiconductor layer; (C) forming a p-type semiconductor portion by irradiating at least a portion of the surface of the n-type semiconductor layer with an ion beam, and doping a region from at least a portion of the surface of the n-type semiconductor layer irradiated with the ion beam to an inner portion of the intrinsic semiconductor layer; and (D) disposing a beta-ray source on the n-type semiconductor layer and the p-type semiconductor part; an intrinsic semiconductor layer disposed on the substrate; an n-type semiconductor layer disposed on the intrinsic semiconductor layer; a p-type semiconductor portion extending from at least a portion of the surface of the n-type semiconductor layer to an internal point of the intrinsic semiconductor layer; and a beta cell including a beta source disposed on the n-type semiconductor layer and the p-type semiconductor part.

Description

Beta battery manufacturing method and beta battery {Method for Manufacturing Betavoltaic Battery and Betavoltaic Battery}

The present invention relates to a method for manufacturing a beta cell having improved energy conversion efficiency and generated power, and a beta cell.

A beta cell is a cell using a technology that produces electrical energy by absorbing beta rays emitted from a radioactive isotope into a p-n junction semiconductor layer of a semiconductor. In particular, beta cells have the advantage of being unaffected by changes in the surrounding environment, generating power on their own without an external power source, and being able to stably produce power even in extreme environments such as cryogenic or high temperatures. In addition, the longer the half-life of the isotope used as the beta ray source, the longer the lifespan of the beta battery, so it can be used semi-permanently by dramatically overcoming the short lifespan of conventional batteries.

Since these beta batteries do not require separate charging and have a long lifespan, they can be used not only as power sources for IoT devices, but also as batteries in extreme environments where charging is difficult.

In general, a beta cell is implemented in a stacking order of n-type semiconductor layer-p-type semiconductor layer-beta emitting portion (p-n junction semiconductor layer), or n-type semiconductor layer-intrinsic semiconductor layer-p-type semiconductor layer-beta emitting portion (p-i-n junction semiconductor layer). However, in the case of manufacturing a beta cell using the above structure as it is, there is a limitation in improving the characteristics. In particular, beta particles generated from radioactive isotopes located on the surface of the beta cell must penetrate into the depletion region (space charge region) in order to generate electron-hole pairs.

However, if the total area of the beta cell is large, it is not suitable as a power source for micro-scale electronic devices. In addition, in the structure of the beta cell as above, in the process of beta particles passing through the p-type semiconductor layer and reaching the depletion region formed in the space past a certain depth from the surface, the number of beta particles absorbed or scattered in the p-type semiconductor layer increases, resulting in a lot of loss. The loss of beta particles reduces the overall electron-hole pair generation rate in the depletion region, thereby degrading the characteristics of the beta cell.

The present invention is to solve the above problems, and by forming a p-type semiconductor portion in a region from a partial surface of an n-type semiconductor layer to an internal point of an intrinsic semiconductor layer using ion beam technology, the surface area of the depletion region is increased, and beta particles can be directly introduced into the depletion region without loss, thereby providing a beta battery with improved battery characteristics.

(A) forming an intrinsic semiconductor layer on a substrate; (B) forming an n-type semiconductor layer on the intrinsic semiconductor layer; (C) forming a p-type semiconductor portion by irradiating at least a portion of the surface of the n-type semiconductor layer with an ion beam and doping a region from at least a portion of the surface of the n-type semiconductor layer irradiated with the ion beam to an internal point of the intrinsic semiconductor layer; and (D) disposing a beta source on the n-type semiconductor layer and the p-type semiconductor part.

In addition, the present invention, a substrate; an intrinsic semiconductor layer disposed on the substrate; an n-type semiconductor layer disposed on the intrinsic semiconductor layer; a p-type semiconductor portion extending from at least a portion of the surface of the n-type semiconductor layer to an internal point of the intrinsic semiconductor layer; and a beta-ray source disposed on the n-type semiconductor layer and the p-type semiconductor unit.

Unlike conventional beta cells with a p-n junction structure (or p-i-n junction structure), the method for manufacturing a beta cell of the present invention forms a p-type semiconductor portion in a region from a partial surface of an n-type semiconductor layer to an internal point of an intrinsic semiconductor layer using ion beam technology, thereby exposing the depletion region to the outside, so that beta particles generated from the beta-ray source can be introduced into the depletion region without loss.

In addition, the surface area of the depletion region is increased compared to the conventional p-n junction structure (or p-i-n junction structure) of the same size, so the generation rate of electron-hole pairs is improved, and ultimately, the energy conversion efficiency of the beta cell is increased. There is an effect of enabling high power generation.

Furthermore, since an etching process for forming an electrode can be omitted unlike conventional methods, flatness of a beta cell can be maintained, thereby improving a fabrication yield.

1 is a perspective view of a beta cell according to an embodiment of the present invention.
2 is a cross-sectional view of a beta cell according to an embodiment of the present invention.
3 is a perspective view of a beta cell according to another embodiment of the present invention.
FIG. 4 is a perspective view of a conventional beta cell having a pin junction structure according to a comparative example of the present invention.
5 is a diagram showing the beta cell structure according to Example 1 of the present invention.
6 is a diagram showing the beta cell structure according to Example 2 of the present invention.
7 is a diagram showing the results of 3D TCAD device simulation according to an experimental example of the present invention.

Since the present invention can make various changes and have various embodiments, specific embodiments will be illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

Terms used in this specification are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise.

In this specification, the expression "~ on" may mean that members are directly joined and attached, or may mean that members are positioned adjacent to each other.

Therefore, the configurations shown in the embodiments described in this specification are only one preferred embodiment of the present invention, and do not represent all of the technical spirit of the present invention, so that they can be replaced at the time of the present application. There may be various equivalents and modifications.

Hereinafter, the present invention will be described in detail.

The method of manufacturing the beta cell according to the present invention includes the steps of (A) forming an intrinsic semiconductor layer on a substrate; (B) forming an n-type semiconductor layer on the intrinsic semiconductor layer; (C) forming a p-type semiconductor portion by irradiating at least a portion of the surface of the n-type semiconductor layer with an ion beam, and doping a region from at least a portion of the surface of the n-type semiconductor layer irradiated with the ion beam to an inner portion of the intrinsic semiconductor layer; and (D) disposing a beta source on the n-type semiconductor layer and the p-type semiconductor part.

Forming the intrinsic semiconductor layer on the substrate (A) may be performed through deposition. As the deposition method, a thin film growth technique including Molecular Beam Epitaxy (MBE), Metal Organic Chemical Vapor Deposition (MOCVD), or Hydride Vapor Phase Epitaxy (HVPE) may be used, but is not limited thereto.

As described above, the intrinsic semiconductor layer may include gallium nitride (GaN). In particular, in depositing gallium nitride (GaN) on the substrate due to the hexagonal fiber zinc crystal structure and growth direction characteristics of gallium nitride (GaN), metal organic chemical vapor deposition (MOCVD) may be used to form a thin film of superior quality.

The metal organic chemical vapor deposition (MOCVD) method as described above is a method for growing a compound crystal by supplying a mixed gas of a group 3 alkyl (organometal raw material gas) and a group 5 reaction gas and a high-purity carrier gas into a reactor and thermally decomposing it on a heated substrate. It has the advantage of being able to control the thickness of the intrinsic semiconductor layer and the n-type semiconductor layer to the nano level by adjusting the flow rate of the metal organic compound and the temperature and pressure of the reactor.

Unlike the p-type semiconductor layer and the n-type semiconductor layer, the intrinsic semiconductor layer may include an undoped layer.

The intrinsic semiconductor layer may have a thickness of 100 nm or more, specifically 150 to 900 nm. When the thickness of the intrinsic semiconductor layer is less than 100 nm, the effect of increasing the probability of generating electron-hole pairs is insignificant, and when it exceeds 900 nm, the depletion region is excessively widened and energy conversion efficiency may decrease.

A background electron concentration of the intrinsic semiconductor layer is 1×10 ¹⁶ /cm ³ or less. When the background electron concentration of the intrinsic semiconductor layer is greater than 1 × 10 ¹⁶ /cm ³ , a problem in that it does not properly function as a depletion region may occur.

The step (B) of forming an n-type semiconductor layer on the intrinsic semiconductor layer may be performed through deposition. The deposition method may be the same as that of forming the intrinsic semiconductor layer on the substrate (A), but is not limited thereto. As described above, the intrinsic semiconductor layer may include gallium nitride (GaN). there is

The n-type semiconductor layer may be doped with an n-type impurity, and the n-type impurity may be a compound containing a tetravalent element such as a silicon-based compound or a hexavalent element such as an oxygen-based compound, but is not limited thereto.

The n-type semiconductor layer may have a thickness of tens of nm or less, specifically, 20 to 90 nm. When the thickness of the n-type semiconductor layer is less than 20 nm, thin film quality may deteriorate, and when the thickness exceeds 90 nm, the number of beta particles absorbed or scattered in the n-type semiconductor layer increases, and thus the electron-hole pair generation rate may decrease.

A background electron concentration of the n-type semiconductor layer is 1 × 10 ¹⁸ /cm ³ or more. When the background electron concentration of the n-type semiconductor layer is less than 1 × 10 ¹⁸ /cm ³ , the resistance of the thin film increases and the function of the current diffusion layer does not properly function, resulting in deterioration of beta cell characteristics.

The step (C) may include masking at least a portion of the surface of the n-type semiconductor layer and then irradiating the non-masked portion with an ion beam derived from a group 2 element of the periodic table.

At this time, the masked region is not irradiated with ion beams, so that the n-type semiconductor layer and the intrinsic semiconductor layer are not doped. However, in the unmasked region, a region from the surface of the n-type semiconductor layer exposed to the ion beam to the inner portion of the intrinsic semiconductor layer may be doped.

That is, the p-type semiconductor portion may be formed by masking at least a portion of the surface of the n-type semiconductor layer and then doping at least a portion of the n-type semiconductor layer and the intrinsic semiconductor layer using an ion beam derived from a group 2 element of the periodic table.

The masking may be made of a material through which ion beams do not transmit, and specifically may include SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , and the like, but is not limited thereto.

This ion beam irradiation technology uses a phenomenon in which kinetic energy of ion beam particles (ions) having high energy is transmitted to the surface of a target sample and converted into kinetic energy. Ions incident on the surface of an n-type semiconductor layer irradiated with an ion beam cause a collision cascade of atoms of the n-type semiconductor layer, and thus the properties of the material can be modified by elastic or inelastic collision. At this time, when the ion beam energy is higher than the binding energy of surface atoms, a sputtering phenomenon occurs in which ions break atomic bonds on the surface and emit atoms to the outside. Immediately after ion implantation, a defect occurs in the crystal structure due to collision, and the implanted ion must be in a substitution position in the crystal structure in order to act as a dopant. Therefore, it is necessary to recrystallize the defective crystal structure through an annealing process to restore it to a normal state, and to move the implanted ions to a substitution site in the crystal structure to act as a dopant and electrically activate them. Heat treatment process methods include furnace annealing, rapid thermal annealing, laser annealing, e-beam annealing, and the like.

An ion beam derived from a group 2 element or group 4 element of the periodic table can be used to form a p-type semiconductor portion in a region extending from at least a portion of the surface of the n-type semiconductor layer to an internal point of the intrinsic semiconductor layer.

In this case, the group 2 element may include at least one selected from magnesium and calcium, and the group 4 element may include at least one selected from carbon and germanium. Accordingly, the p-type semiconductor part may include the Group 2 element or a compound containing the Group 2 element-derived ion or the Group 4 element or Group 4-derived element-derived ion as a p-type impurity.

As described above, the depth at which the p-type semiconductor unit is formed and the concentration of holes in the p-type semiconductor unit may be determined by ion beam implantation energy.

In order to form a p-type semiconductor portion by doping a region from at least a portion of the surface of the n-type semiconductor layer irradiated with the ion beam to an internal point of the intrinsic semiconductor layer, the ion implantation energy of the ion beam may be 20 keV to 1 MeV.

If the ion implantation energy of the ion beam is less than 20 keV, sputtering may occur and the surface of the n-type semiconductor layer may be etched away, and the surface area of the entire depletion region may not be increased while the p-type semiconductor portion is formed confined to the n-type semiconductor layer. When the ion implantation energy is greater than 1 MeV, the irradiation or implantation is performed beyond the thickness of the intrinsic semiconductor layer, which is inefficient, and the p-type semiconductor portion may not be properly formed on the surface side in contact with the beta radiation source.

The maximum depth of the p-type semiconductor part (the longest length among the lengths from the surface of the p-type semiconductor part exposed to the outside to the contact surface between the p-type semiconductor part and the intrinsic semiconductor layer) may be several tens of nm or more, specifically 20 to 1,000 nm. When the maximum depth of the p-type semiconductor portion is less than 20 nm, the depletion region is limited to the n-type semiconductor layer, and the surface area of the entire depletion region cannot be increased. When the maximum depth of the p-type semiconductor portion exceeds 1,000 nm, a depletion region is formed to a thickness greater than or equal to the thickness of the intrinsic semiconductor layer, but the total surface area cannot be increased any more.

Background hole concentration of the p-type semiconductor part is 1 × 10 ¹⁷ /cm ³ or more. When the background hole concentration of the p-type semiconductor part is less than 1 × 10 ¹⁷ /cm ³ , resistance may increase and junctions may not be properly formed.

In the structure in which the substrate-intrinsic semiconductor layer-n-type semiconductor layer is formed as in the present invention, when forming the p-type semiconductor part therein, in the case of using conventional metal organic chemical vapor deposition (MOCVD), it is necessary to selectively grow a thin film. Before growth, masking with an insulating film such as SiO ₂ and then proceeding with growth. However, since the growth must be performed locally only in a partial area rather than in a wafer unit, a problem of poor quality of the p-type semiconductor part may occur. On the other hand, in the case of using the above-described ion beam technology, the p-type semiconductor portion can be easily formed locally by masking the grown structure, and the depth of the p-type semiconductor portion can be easily adjusted according to the ion irradiation energy, unlike the metalorganic chemical vapor deposition method in which the depth of the p-type semiconductor portion is based on the thickness of the grown thin film. Therefore, when forming the p-type semiconductor portion, it is preferable to use the ion beam technology in terms of convenience and effectiveness.

In addition, a depletion region may be formed at a boundary where the p-type semiconductor unit contacts the n-type semiconductor layer and the intrinsic semiconductor layer and at a boundary region where the n-type semiconductor layer and the intrinsic semiconductor layer contact each other. Accordingly, the generation rate of electron-hole pairs is improved, and ultimately, the energy conversion efficiency of the beta cell is increased, thereby enabling high power generation.

Furthermore, in the beta cell formed by ion beam as described above, since the p-type semiconductor portion and the n-type semiconductor layer are all exposed to the outside, an etching process for forming an electrode in a beta cell having a conventional layer-by-layer p-n junction structure (or p-i-n junction structure) as shown in FIG.

In addition, the p-type semiconductor unit may be formed in plurality. That is, when a region from a plurality of unmasked surface portions on the n-type semiconductor layer to an inner point of the intrinsic semiconductor layer is doped, a plurality of p-type semiconductor portions may be formed inside the n-type semiconductor layer and the intrinsic semiconductor layer.

Accordingly, as the area of the depletion region increases, the generation rate of electron-hole pairs increases, and thus the energy conversion efficiency of the beta cell can be improved.

In the step (D), a beta-ray source may be disposed on the n-type semiconductor layer and the p-type semiconductor portion, and the beta-ray source may emit beta-rays to provide an energy source to the semiconductor layer.

In this case, the beta radiation source may include a radioactive isotope capable of emitting beta rays. The beta-ray source is not limited thereto as long as it is a member containing a radioactive isotope capable of emitting beta rays. Specifically, the beta-ray source may be a layer containing a radioactive isotope capable of emitting beta-rays.

The beta radiation source may be disposed adjacent to the depletion region. That is, the beta ray source may be in contact with the depletion region, or the beta ray source may be disposed apart from the depletion region by a predetermined distance.

When the beta-ray source is a layer containing a radioactive isotope, it may be manufactured through a plating method. Specifically, after dissolving a radioactive isotope in an aqueous sulfuric acid solution to convert it into a radioactive isotope in a sulfated state, the aqueous sulfuric acid solution in which the radioactive isotope in a sulfated state is dissolved is injected into an electroless plating solution, and electroless plating is performed on the n-type semiconductor layer and the p-type semiconductor portion or on any substrate using the electroless plating solution to form a radioactive isotope-containing layer.

The radioactive isotope may include at least one selected from nickel (Ni-63), strontium (Sr-90), promethium (Pm-147), and tritium (H-3).

In particular, when nickel (Ni-63) is included as the radioactive isotope, since it has an average energy of about 17.4 keV and a maximum energy of about 67 keV, the maximum energy is low and the semiconductor layer may not be damaged. In addition, since it has a half-life of 100 years or more, it is possible to manufacture a beta cell having an almost semi-permanent lifespan.

When the beta-ray source includes nickel (Ni-63) as a radioactive isotope and is prepared through a plating method, the radioactive isotope in the sulfate state may be NiSO ₄ 6H ₂ O, and the electroless plating solution includes NaH ₂ PO ₃ H ₂ O, Na ₃ C _{6 H 5} O 7 2H ₂ O, NaC ₂ H ₃ O ₂ , Pb (CH ₃ COO) ₂ 2H ₂ O may be included.

In particular, when a beta cell is manufactured by electroless plating a radioactive isotope-containing layer as described above, the amount of beta particle absorption in the p-type semiconductor portion, the n-type semiconductor layer, and the depletion region is maximized, thereby maximizing the output of the beta cell.

The substrate may include at least one selected from sapphire (Al ₂ O ₃ ), silicon carbide (SiC), diamond, gallium nitride (GaN), and silicon.

The substrate may include the same material as the p-type semiconductor part, the n-type semiconductor layer, and the intrinsic semiconductor layer, or may include a different material. When the substrate, the p-type semiconductor part, the n-type semiconductor layer, and the intrinsic semiconductor layer include the same material, the occurrence of defects at the junction interface is relatively reduced, so that the quality of the thin film is improved compared to the case where the substrate and the p-type semiconductor part, the n-type semiconductor layer, and the intrinsic semiconductor layer include different materials.

The intrinsic semiconductor layer, the n-type semiconductor layer, and the p-type semiconductor part may include gallium nitride (GaN). As described above, when gallium nitride (GaN) is included, the beta cell can be used even in extreme situations such as high voltage, high current, and high temperature. In addition, since the gallium nitride (GaN) has a large bandgap energy (3.4 eV), the semiconductor layer is not easily damaged due to its high resistance to radiation.

The manufacturing method of the beta cell includes forming a p-type electrode electrically connected to the p-type semiconductor part; and forming an n-type electrode electrically connected to the n-type semiconductor layer.

Forming the p-type electrode may include forming a p-type electrode electrically connected to the p-type semiconductor portion on one surface of the p-type semiconductor portion, and forming the n-type electrode may include forming an n-type electrode electrically connected to the n-type semiconductor layer on one surface of the n-type semiconductor layer.

The n-type electrode may be an anode and the p-type electrode may be a cathode, or the n-type electrode may be a cathode and the p-type electrode may be an anode.

In this case, the p-type electrode may be formed on one surface of the n-type semiconductor layer, and may be formed only on a portion of an area of one surface of the n-type semiconductor layer, but is not limited thereto.

Aluminum, a representative n-type electrode, forms an ohmic junction with the n-type semiconductor layer, and nickel, a representative p-type electrode, forms an ohmic junction with the p-type semiconductor layer. On the other hand, aluminum forms a p-type semiconductor layer and nickel forms a Schottky junction with an n-type semiconductor layer. Therefore, even if the p-type electrode is located on the n-type semiconductor layer, it can be said that it is not electrically connected to the p-type semiconductor layer because it forms a Schottky junction and has a relatively high contact resistance.

Therefore, when the p-type electrode of the present invention is formed on one surface of the n-type semiconductor layer, a step of forming an insulating film between the p-type electrode and the n-type semiconductor layer may be further included. As described above, by forming an insulating film between the p-type electrode and the n-type semiconductor layer, a high bias is applied so that a Schottky junction barrier is lowered and electrically connected.

The p-type electrode and the n-type electrode may not be connected (contact) with each other.

That is, depending on the electronic device to which the beta cell is applied, the p-type electrode is electrically connected to the p-type semiconductor portion, and the n-type electrode is electrically connected to the n-type semiconductor layer, and may be formed in various arrangements and shapes.

The n-type electrode and the p-type electrode may be formed as ohmic electrodes. The n-type electrode and the p-type electrode may be formed using thin film growth techniques including electron beam evaporation, thermal evaporation, sputtering, and electroless plating, but are not limited thereto.

The n-type electrode may include aluminum (Al) or the like, and the p-type electrode may include nickel (Ni) or the like, but is not limited thereto.

In addition, the present invention is a substrate; an intrinsic semiconductor layer disposed on the substrate; an n-type semiconductor layer disposed on the intrinsic semiconductor layer; a p-type semiconductor portion extending from at least a portion of the surface of the n-type semiconductor layer to an internal point of the intrinsic semiconductor layer; and a beta-ray source disposed on the n-type semiconductor layer and the p-type semiconductor unit.

The beta cell is a battery that absorbs beta rays emitted from a beta source through a p-type semiconductor portion, an n-type semiconductor layer, and a depletion region and converts them into electrical energy.

Regarding the substrate, the intrinsic semiconductor layer, the n-type semiconductor layer, the p-type semiconductor part, the beta-ray source, and the beta cell, the above-mentioned information can be applied in the same way.

In addition, the beta cell of the present invention may be provided in a form in which a plurality of cells are connected horizontally, or may have a structure in which a p-type semiconductor unit is formed in a stepping stone form between an n-type semiconductor layer and an intrinsic semiconductor layer, as shown in FIG. 3 .

Hereinafter, the present invention will be described in more detail with reference to preferred embodiments.

However, these examples are intended to explain the present invention in more detail, and the scope of the present invention is not limited thereby.

<Example 1>

In the structure of the substrate/intrinsic semiconductor layer/n-type semiconductor layer, the structure of a beta cell including one p-type semiconductor portion (width: 6 μm (z-axis)) formed from the top surface of the n-type semiconductor layer to the inside of the intrinsic semiconductor layer is shown in FIG. 5 .

<Example 2>

In the beta cell of Example 1, instead of one p-type semiconductor portion, a total of three p-type semiconductor portions (width: 2 μm (z-axis)) X 3) having the same volume are formed on the n-type semiconductor layer and the intrinsic semiconductor layer, and a beta cell structure having the same structure as Example 1 is shown in FIG.

<Comparative example>

The structure of a conventional p-i-n type beta cell is shown in FIG. 4.

<Experimental example>

For the beta cell structures of Example 1, Example 2, and Comparative Example, the power characteristics generated when 17 keV (Ni-63 beta particle average energy) electrons were irradiated were confirmed through 3-dimensional TCAD (technology computer-aided design) device simulation. The results are shown in FIG. 7.

In FIG. 7, 'Open: Dark' is a basic characteristic of a beta cell when the electron beam is not irradiated, and has a value of 0 because the device is turned off at a voltage lower than the threshold voltage (or turn-on voltage) and current does not flow.

According to FIG. 7, in the conventional pin-type beta cell of Comparative Example, the current generated by electrons (I _SC , short circuit current: current flowing when the voltage bias is 0 V in the beta cell) is 11.4 pA, whereas in the beta cell of Example 1, it was confirmed that 13.3 pA of I _SC flows.

In addition, when the p-type semiconductor unit is expanded into a plurality of multi-structures as in Example 2, it was confirmed that the generation current increased to 14.4 pA. This can be said to be the result of the increase in electron-hole pairs generated by electron irradiation due to the increase in the total depletion region, and as a result, it can be confirmed that the beta cell efficiency is improved.

Claims (17)

(A) forming an intrinsic semiconductor layer on a substrate;
(B) forming an n-type semiconductor layer on the intrinsic semiconductor layer;
(C) forming a p-type semiconductor portion by irradiating at least a portion of the surface of the n-type semiconductor layer with an ion beam, and doping a region from at least a portion of the surface of the n-type semiconductor layer irradiated with the ion beam to an inner portion of the intrinsic semiconductor layer; and
(D) disposing a beta-ray source on the n-type semiconductor layer and the p-type semiconductor part;
Method for producing a beta battery comprising a. The method of claim 1,
The step (C) includes masking at least a portion of the surface of the n-type semiconductor layer and then irradiating the non-masked portion with an ion beam derived from a group 2 element or a group 4 element of the periodic table. Method of manufacturing a beta battery. The method of claim 1,
The ion implantation energy of the ion beam is a method for manufacturing a beta cell of 20 keV to 1 MeV. The method of claim 2,
The Group 2 element includes at least one selected from magnesium and calcium, and the Group 4 element includes at least one selected from carbon and germanium. The method of claim 1,
Wherein the intrinsic semiconductor layer, the n-type semiconductor layer, and the p-type semiconductor part include gallium nitride (GaN). The method of claim 1,
The beta-ray source is a method for producing a beta cell that is a layer containing a radioactive isotope capable of emitting beta rays. The method of claim 6,
The radioactive isotope includes at least one selected from nickel (Ni-63), strontium (Sr-90), promethium (Pm-147) and tritium (H-3). The method of claim 1,
forming a p-type electrode electrically connected to the p-type semiconductor part; and
forming an n-type electrode electrically connected to the n-type semiconductor layer;
Method for producing a beta battery further comprising a. Board;
an intrinsic semiconductor layer disposed on the substrate;
an n-type semiconductor layer disposed on the intrinsic semiconductor layer;
a p-type semiconductor portion extending from at least a portion of the surface of the n-type semiconductor layer to an internal point of the intrinsic semiconductor layer; and
A beta cell comprising a beta source disposed on the n-type semiconductor layer and the p-type semiconductor portion. The method of claim 9,
The beta cell of claim 1 , wherein a depletion region is formed at a boundary where the p-type semiconductor unit contacts the n-type semiconductor layer and the intrinsic semiconductor layer, and at a boundary region where the n-type semiconductor layer and the intrinsic semiconductor layer contact each other. The method of claim 10,
A beta cell wherein the beta source is adjacent to the depletion region. The method of claim 9,
The p-type semiconductor unit is formed by masking at least a portion of the surface of the n-type semiconductor layer and then doping at least a portion of the n-type semiconductor layer and the intrinsic semiconductor layer using an ion beam derived from a group 2 or group 4 element of the periodic table. The method of claim 12,
The group 2 element includes at least one selected from magnesium and calcium, and the group 4 element includes at least one selected from carbon and germanium. The method of claim 9,
The beta cell wherein the intrinsic semiconductor layer, the n-type semiconductor layer, and the p-type semiconductor part include gallium nitride (GaN). The method of claim 9,
The beta cell is a layer containing a radioactive isotope capable of emitting beta rays. The method of claim 15
The radioactive isotope is a beta battery that includes at least one selected from nickel (Ni-63), strontium (Sr-90), promethium (Pm-147) and tritium (H-3). The method of claim 9,
a p-type electrode electrically connected to the p-type semiconductor part; and
an n-type electrode electrically connected to the n-type semiconductor layer;
A beta cell further comprising a.