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Khan et al., 2021 - Google Patents

Demonstration and Comparison of GaN/Sapphire and InGaP pin Devices for Tritium Betavoltaic Power Source

Khan et al., 2021

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Document ID
6362574038221498463
Author
Khan M
Sweeney A
Barham O
Litz M
Tompkins R
Iliadis A
NAVAL SURFACE WARFARE CENTER INDIAN HEAD DIV MD
Publication year

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In this study, the performance of gallium nitride GaN and indium gallium phosphide InGaP semiconductor pin diodes designed for application as a tritium-based betavoltaic source is evaluated. Tritium is an attractive choice for a betavoltaic power source because it is …
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