KR102336748B1 - 기판 가열 장치, 기판 가열 방법 및 적외선 히터 - Google Patents
기판 가열 장치, 기판 가열 방법 및 적외선 히터 Download PDFInfo
- Publication number
- KR102336748B1 KR102336748B1 KR1020170096211A KR20170096211A KR102336748B1 KR 102336748 B1 KR102336748 B1 KR 102336748B1 KR 1020170096211 A KR1020170096211 A KR 1020170096211A KR 20170096211 A KR20170096211 A KR 20170096211A KR 102336748 B1 KR102336748 B1 KR 102336748B1
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- substrate
- infrared heater
- heating
- infrared
- bend
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- 239000000758 substrate Substances 0.000 title claims abstract description 355
- 238000010438 heat treatment Methods 0.000 title claims abstract description 307
- 238000000034 method Methods 0.000 title claims description 29
- 230000004308 accommodation Effects 0.000 claims abstract description 8
- 238000001514 detection method Methods 0.000 claims description 18
- 230000006837 decompression Effects 0.000 claims description 11
- 238000009826 distribution Methods 0.000 abstract description 50
- 229920001721 polyimide Polymers 0.000 description 33
- 239000004642 Polyimide Substances 0.000 description 28
- 230000004048 modification Effects 0.000 description 17
- 238000012986 modification Methods 0.000 description 17
- 230000009467 reduction Effects 0.000 description 17
- 230000002093 peripheral effect Effects 0.000 description 16
- 239000007788 liquid Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000011946 reduction process Methods 0.000 description 12
- 238000011084 recovery Methods 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- 230000008602 contraction Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000003780 insertion Methods 0.000 description 9
- 230000037431 insertion Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000001816 cooling Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920005575 poly(amic acid) Polymers 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Resistance Heating (AREA)
- Drying Of Solid Materials (AREA)
- Furnace Details (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020210102169A KR20210100054A (ko) | 2016-08-30 | 2021-08-03 | 기판 가열 장치, 기판 가열 방법 및 적외선 히터 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016167793A JP6757629B2 (ja) | 2016-08-30 | 2016-08-30 | 基板加熱装置、基板加熱方法及び赤外線ヒータ |
JPJP-P-2016-167793 | 2016-08-30 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020210102169A Division KR20210100054A (ko) | 2016-08-30 | 2021-08-03 | 기판 가열 장치, 기판 가열 방법 및 적외선 히터 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20180025177A KR20180025177A (ko) | 2018-03-08 |
KR102336748B1 true KR102336748B1 (ko) | 2021-12-07 |
Family
ID=61437446
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020170096211A KR102336748B1 (ko) | 2016-08-30 | 2017-07-28 | 기판 가열 장치, 기판 가열 방법 및 적외선 히터 |
KR1020210102169A KR20210100054A (ko) | 2016-08-30 | 2021-08-03 | 기판 가열 장치, 기판 가열 방법 및 적외선 히터 |
KR1020220091268A KR20220109367A (ko) | 2016-08-30 | 2022-07-22 | 기판 가열 장치, 기판 가열 방법 및 적외선 히터 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020210102169A KR20210100054A (ko) | 2016-08-30 | 2021-08-03 | 기판 가열 장치, 기판 가열 방법 및 적외선 히터 |
KR1020220091268A KR20220109367A (ko) | 2016-08-30 | 2022-07-22 | 기판 가열 장치, 기판 가열 방법 및 적외선 히터 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6757629B2 (ja) |
KR (3) | KR102336748B1 (ja) |
CN (1) | CN107785240B (ja) |
TW (2) | TWI762146B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111383944A (zh) * | 2018-12-29 | 2020-07-07 | 东京应化工业株式会社 | 基板加热装置、基板处理系统以及基板加热方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3060663B2 (ja) * | 1991-11-15 | 2000-07-10 | 井関農機株式会社 | トラクタの伝動ケース接続構造 |
JP2005011852A (ja) | 2003-06-16 | 2005-01-13 | Tokyo Electron Ltd | 熱処理装置及び熱処理方法 |
JP2005019479A (ja) * | 2003-06-23 | 2005-01-20 | Tokyo Electron Ltd | 加熱手段、載置台及び熱処理装置 |
JP2015141965A (ja) * | 2014-01-28 | 2015-08-03 | 東京応化工業株式会社 | 回収装置及び基板処理装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3060633U (ja) * | 1998-12-28 | 1999-09-07 | アイリスオーヤマ株式会社 | 組立式チェスト |
JP3060663U (ja) * | 1998-12-29 | 1999-09-07 | クリーン・テクノロジー株式会社 | 加熱装置 |
KR100457189B1 (ko) * | 1999-12-27 | 2004-11-16 | 마쯔시다덴기산교 가부시키가이샤 | 액정표시장치 및 그 구동방법 |
JP2001210632A (ja) | 2000-01-28 | 2001-08-03 | Sharp Corp | ポリイミド膜の形成方法 |
JP3798674B2 (ja) * | 2001-10-29 | 2006-07-19 | 大日本スクリーン製造株式会社 | 熱処理装置および熱処理方法 |
JP2006170524A (ja) | 2004-12-15 | 2006-06-29 | Tdk Corp | 焼成炉 |
US8573836B2 (en) * | 2006-10-26 | 2013-11-05 | Tokyo Electron Limited | Apparatus and method for evaluating a substrate mounting device |
US8216876B2 (en) | 2008-02-20 | 2012-07-10 | Sharp Kabushiki Kaisha | Method for manufacturing flexible semiconductor substrate |
CN101962759B (zh) * | 2009-07-21 | 2012-07-25 | 深圳市宇光高科新能源技术有限公司 | 一种带有内加热器的pecvd系统 |
JP5428811B2 (ja) * | 2009-12-04 | 2014-02-26 | 凸版印刷株式会社 | 基板乾燥方法、基板乾燥装置、基板の製造方法、及びフラットパネルディスプレイ |
JP2012250230A (ja) * | 2011-06-02 | 2012-12-20 | Tokyo Ohka Kogyo Co Ltd | 加熱装置、塗布装置及び加熱方法 |
JP5622701B2 (ja) * | 2011-10-13 | 2014-11-12 | 東京エレクトロン株式会社 | 減圧乾燥装置 |
JP2015133444A (ja) * | 2014-01-15 | 2015-07-23 | 株式会社東芝 | 半導体製造装置および半導体装置の製造方法 |
-
2016
- 2016-08-30 JP JP2016167793A patent/JP6757629B2/ja active Active
-
2017
- 2017-07-14 CN CN201710573155.8A patent/CN107785240B/zh active Active
- 2017-07-14 TW TW110100792A patent/TWI762146B/zh active
- 2017-07-14 TW TW106123574A patent/TWI729167B/zh active
- 2017-07-28 KR KR1020170096211A patent/KR102336748B1/ko active IP Right Grant
-
2021
- 2021-08-03 KR KR1020210102169A patent/KR20210100054A/ko not_active Application Discontinuation
-
2022
- 2022-07-22 KR KR1020220091268A patent/KR20220109367A/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3060663B2 (ja) * | 1991-11-15 | 2000-07-10 | 井関農機株式会社 | トラクタの伝動ケース接続構造 |
JP2005011852A (ja) | 2003-06-16 | 2005-01-13 | Tokyo Electron Ltd | 熱処理装置及び熱処理方法 |
JP2005019479A (ja) * | 2003-06-23 | 2005-01-20 | Tokyo Electron Ltd | 加熱手段、載置台及び熱処理装置 |
JP2015141965A (ja) * | 2014-01-28 | 2015-08-03 | 東京応化工業株式会社 | 回収装置及び基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI762146B (zh) | 2022-04-21 |
TW202129767A (zh) | 2021-08-01 |
KR20220109367A (ko) | 2022-08-04 |
CN107785240A (zh) | 2018-03-09 |
KR20210100054A (ko) | 2021-08-13 |
JP6757629B2 (ja) | 2020-09-23 |
TW201807756A (zh) | 2018-03-01 |
TWI729167B (zh) | 2021-06-01 |
JP2018037191A (ja) | 2018-03-08 |
KR20180025177A (ko) | 2018-03-08 |
CN107785240B (zh) | 2023-06-20 |
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