KR102212605B1 - Pattering device and operating method thereof - Google Patents

Abstract

A patterning device is provided. The patterning apparatus includes: a target substrate preparation unit in which a target substrate is prepared, a target substrate moving unit for moving the target substrate, and a patterning for receiving the target substrate from the target substrate moving unit and forming a pattern on the target substrate Including a portion, wherein the patterning portion is moved in a first direction and a second direction perpendicular to the first direction, a stage on which the target substrate is disposed, and a third direction perpendicular to the first and second directions It may include a patterning module on which a master substrate including a master pattern that extends in a direction and is linearly moved in the third direction is mounted in contact with and separated from the target substrate.

Description

Patterning device and operating method thereof

The present invention relates to a patterning apparatus and a method of operation thereof, and more particularly, to a patterning apparatus including a stage disposed on a rolling module, a patterning module in contact with a target substrate disposed on the stage, and an operating method thereof.

As the degree of integration of semiconductor devices increases, design rules rapidly decrease, and the size of semiconductor devices formed inside cells is gradually decreasing. Accordingly, in order to form a fine photoresist pattern, a high resolution of a photo-lithography exposure equipment is required, and thus many difficulties arise when manufacturing a semiconductor device constituting a cell.

Therefore, in order to overcome the optical limitations of photolithography for fine patterns that exceed the limit resolution of the exposure equipment, a photosensitive film pattern is formed, and then the photosensitive film pattern is heated above the glass transition temperature of the photosensitive film to reflow. A process of forming a pattern and a process using a RELACS (Resist Enhancement Lithography Assisted by Chemical Shrink) material were used.

However, in the case of a photoresist film reflow or RELACS process, it is almost impossible to form a fine pattern at the level of 30 nm due to a resolution limitation and a reduction in the photosensitive film volume. Accordingly, various methods and devices for forming fine patterns to solve the above-described problems have been researched and developed. For example, Korean Patent Registration No. 10-1000715 (Application No.: 10-2008-0086923, Applicant: Yonsei University Industry-Academic Cooperation Foundation) includes a nozzle for spraying a solution containing conductive particles by hydraulic pressure; An intermediate electrode positioned between the nozzle and the patterning object to which the solution sprayed from the nozzle is patterned; And a power supply device for supplying a voltage with a potential difference between the nozzle and the intermediate electrode; it is possible to stably implement patterning without separately installing a ground electrode under the patterning object. Disclosed are an electrohydrodynamic spray-type microconductive line patterning device capable of performing stable patterning with constant performance regardless of type and thickness, and a patterning method using the same. In addition, technologies related to methods and devices for forming fine patterns are continuously researched and developed.

Korean patent registration number 10-1000715

One technical problem to be solved by the present invention is to provide a patterning apparatus and a method of operating the same in which patterns having various sizes and shapes can be easily formed on various substrates.

Another technical problem to be solved by the present invention is to provide a patterning apparatus and a method of operating the same that facilitates a large area process.

Another technical problem to be solved by the present invention is to provide a patterning device with improved process stability and an operating method thereof.

The technical problem to be solved by the present invention is not limited to the above.

In order to solve the above technical problems, the present invention provides a patterning device.

According to an embodiment, a target substrate preparation unit in which a target substrate is prepared, a target substrate moving unit for moving the target substrate, and a target substrate are provided from the target substrate moving unit to form a pattern on the target substrate. In a patterning apparatus including a patterning unit, the patterning unit is moved in a first direction and a second direction perpendicular to the first direction, and a stage on which the target substrate is disposed, and the first and second directions A patterning module that extends in a third direction, which is a right angle, and is mounted with a master substrate including a master pattern that is in contact with and separated from the target substrate as it is linearly moved in the third direction, wherein the target substrate and the master pattern In the case of contact, the patterning module may include forming a target pattern having an inverse image of the master pattern on the target substrate by applying pressure on the target substrate.

According to an embodiment, the target substrate is moved in the first direction and the second direction according to the movement of the stage, and the target substrate and the master pattern are contacted a plurality of times, for each contact number, the master The pattern may include contacting different regions on the target substrate.

According to an embodiment, a hardness of the master pattern may be higher than that of the target substrate, and a pressure applied on the target substrate may be controlled according to a material type of the target substrate.

According to an embodiment, the patterning module includes a support member and a ram head supported by the support member and linearly reciprocating in the third direction, and the master substrate is disposed at one end of the ram head As a result, it may include facing the target substrate.

According to an embodiment, the master substrate may include a carbon tape attached to one end of the ram head.

According to an embodiment, the master substrate may include a plurality of master patterns, and each of the plurality of master patterns may have different shapes.

In order to solve the above technical problems, the present invention provides a method of operating a patterning device.

According to an embodiment, the method of operating the patterning device includes: arranging a target substrate on a target substrate preparation unit, arranging a master substrate having a master pattern on a REM head of a patterning module, and staging the target substrate The step of moving upward, the step of moving the stage on which the target substrate is mounted to face the REM head, and the REM head of the patterning module move toward the stage to contact the master substrate and the target substrate And applying pressure to form a target pattern having an inverse phase of the master pattern on the target substrate.

According to an embodiment, in the forming of the target pattern, a target pattern having an inverse image of the master pattern is formed on a region of the target substrate by contacting and applying pressure to a region of the target substrate and the master substrate. The steps of separating the target substrate and the master substrate, and applying pressure to the master substrate with other regions except for one region of the target substrate, thereby forming a reverse phase of the master pattern on the other region of the target substrate. It may include the step of forming a target pattern having.

According to an embodiment, the step of separating the substrate and the step of forming the target pattern on the other region of the target substrate may be performed a plurality of times, including forming a plurality of target patterns on the target substrate. I can.

According to an embodiment, the plurality of target patterns may comprise rows and columns and are arranged in two dimensions.

A patterning apparatus according to an embodiment of the present invention receives the target substrate from a target substrate preparation unit in which a target substrate is prepared, a target substrate moving unit for moving the target substrate, and the target substrate moving unit, and is placed on the target substrate. And the patterning portion forming a pattern, wherein the patterning portion is moved in the first direction and in the second direction perpendicular to the first direction, and a stage on which the target substrate is disposed, and the first and second It includes a patterning module on which a master substrate including a master pattern that extends in a third direction perpendicular to the direction and is linearly moved in the third direction is mounted in contact with the target substrate and separated from the target substrate, and the target substrate and the When the master pattern is in contact, the patterning module may include applying pressure on the target substrate to form a target pattern having an inverse image of the master pattern on the target substrate. Accordingly, a patterning apparatus capable of manufacturing patterns having various sizes and shapes on a large area on various substrates may be provided.

1 and 2 are diagrams illustrating a patterning device according to an embodiment of the present invention.
3 and 4 are diagrams illustrating a patterning module included in a patterning device according to an embodiment of the present invention.
5 and 6 are diagrams illustrating that a target pattern is formed on a target substrate by the patterning apparatus according to an exemplary embodiment of the present invention.
7 is a diagram illustrating an example of a target substrate divided into a plurality of regions.
8 to 12 are diagrams illustrating a process of forming a target pattern in different regions on a target substrate by the patterning apparatus according to an exemplary embodiment of the present invention.
13 and 14 are diagrams illustrating a ram head included in the patterning device according to the first modified example of the present invention.
15 is a diagram illustrating a patterning process through a patterning device according to a second modified example of the present invention.
16 is a diagram illustrating a target pattern formed through a patterning device according to a second modified example of the present invention.
17 is a diagram illustrating a ram head included in a patterning device according to a third modified example of the present invention.
18 is a diagram illustrating a target substrate on which a target pattern is formed through a patterning device according to a third modified example of the present invention.
19 is a diagram illustrating a side view of a ram head included in a patterning device according to a fourth modified example of the present invention.
20 is a view showing a perspective view of a ram head included in the patterning device according to the fourth modified example of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical idea of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosed content may be thorough and complete, and the spirit of the present invention may be sufficiently transmitted to those skilled in the art.

In the present specification, when a component is referred to as being on another component, it means that it may be formed directly on the other component or that a third component may be interposed between them. In addition, in the drawings, thicknesses of films and regions are exaggerated for effective description of technical content.

In addition, in various embodiments of the present specification, terms such as first, second, and third are used to describe various components, but these components should not be limited by these terms. Accordingly, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment.

Each embodiment described and illustrated herein also includes its complementary embodiment. In addition, in the present specification,'and/or' is used to mean including at least one of the elements listed before and after.

In the specification, expressions in the singular include plural expressions unless the context clearly indicates otherwise. In addition, terms such as "comprise" or "have" are intended to designate the presence of features, numbers, steps, elements, or a combination of the features described in the specification, and one or more other features, numbers, steps, and configurations It is not to be understood as excluding the possibility of the presence or addition of elements or combinations thereof.

Further, in the following description of the present invention, when it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, a detailed description thereof will be omitted.

1 and 2 are diagrams illustrating a patterning device according to an exemplary embodiment of the present invention, and FIGS. 3 and 4 are diagrams illustrating a patterning module included in a patterning apparatus according to an exemplary embodiment of the present invention.

1 and 2, a patterning device according to an exemplary embodiment of the present invention may include a target substrate preparation unit 200, a target substrate moving unit 300, and a patterning unit 100. According to an embodiment, the patterning device according to the embodiment may be disposed in the chamber CB as shown in FIG. 2. The chamber CB may be connected to the vacuum pump P. Accordingly, the inside of the chamber CB may be maintained in a vacuum environment by the vacuum pump P. As a result, the patterning process using the patterning device according to the embodiment may be performed in a vacuum environment. Hereinafter, each configuration will be described in detail.

A target substrate TG may be prepared in the target substrate preparation unit 200. According to an embodiment, the target substrate TG is platinum (Pt), silicon dioxide (SiO ₂ ), tungsten (W), chromium (Cr), aluminum (Al), nickel (Ni), gold (Au), At least one of lead (Pd), silver (Ag), copper (Cu), indium (In), GST (Ge ₂ Sb ₂ Te ₅ ), ITO (Indium Tin Oxide), PET (polyethylene terephthalate), and PI (polyimide) It can contain either. According to another embodiment, the target substrate TG may be a skin of a creature, a hair of a creature, a skin, or a stretchable material.

The target substrate moving part 300 may move the target substrate TG. Specifically, the target substrate moving unit 300 may move the target substrate TG prepared in the target substrate preparation unit 200 to the patterning unit 100.

The patterning part 100 may receive the target substrate TG from the target substrate moving part 300 and form a pattern on the target substrate TG. According to an embodiment, the patterning unit 100 may include a stage 130 and a patterning module 140. Hereinafter, each configuration of the patterning unit 100 will be described in more detail.

The stage 130 may receive the target substrate TG from the target substrate moving part 300. That is, the target substrate TG may be disposed on the stage 130.

The stage 130 may be moved in a first direction and a second direction. For example, the first direction may be the X-axis direction shown in FIG. 1. The second direction may be a direction perpendicular to the first direction. Specifically, the second direction may be the Y-axis direction shown in FIG. 1. According to an embodiment, the stage 130 may be moved by various power sources such as a servo motor, air, hydraulic pressure, and electric method. The type of power for moving the stage 130 is not limited.

When the stage 130 is moved, the target substrate TG may also be moved. That is, when the stage 130 is moved in the first direction, the target substrate TG may also be moved in the first direction. In addition, when the stage 130 is moved in the second direction, the target substrate TG may also be moved in the second direction.

1 to 4, the patterning module 140 may extend in a third direction. The third direction may be a direction perpendicular to the first and second directions. For example, the third direction may be the Z-axis direction shown in FIG. 1.

According to an embodiment, the patterning module 140 may include a support member 142 and a ram head 144. The support member 142 may support the ram head 144. The ram head 144 may linearly reciprocate in the third direction. A master substrate 146 may be mounted on one end of the ram head 144. Specifically, the master substrate 146 may be mounted on one end of the ram head 144 through a carbon tape. Alternatively, the master substrate 146 may be mounted on one end of the RAM head 144 by various methods such as physical and chemical methods. The method of mounting the master substrate 146 is not limited.

The master substrate 146 may include a master pattern (not shown). The master pattern (not shown) may have an uneven shape having a concave portion and a convex portion. The shape of the master pattern (not displayed) is not limited. According to an embodiment, the master substrate 146 may include a plurality of the master patterns (not shown). Each of the plurality of master patterns (not shown) may have different shapes. Alternatively, the plurality of master patterns (not shown) may have the same shape.

According to an embodiment, the master substrate 146 is platinum (Pt), silicon (Si), silicon dioxide (SiO ₂ ), ITO (Indium Tin Oxide), nickel (Ni), copper (Cu), aluminum (Al ) May include at least one of. According to another embodiment, the master substrate 146 may be SiO _x formed by self-assembly of a PS-PDMS block copolymer polymer. (x>0) For example, the block copolymer polymer is PDMS (poly dimethylsiloxane), polyacrylonitrile-b-polydimethylsiloxane, polyethylene oxide-b-polydimethylsiloxane ( polyethylene oxide-b-polydimethylsiloxane), poly(2-vinylpyridine)-b-polydimethylsiloxane (poly(2-vinylpyridine)-b-polydimethylsiloxane), poly(4-vinylpyridine)-b-polydimethylsiloxane (poly( 4-vinylpyridine)-b-polydimethylsiloxane), polymethylmethacrylate-b-polydimethylsiloxane, polyacrylonitrile-b-polypropylene, polyethylene oxide- b-polypropylene (poly(ethylene oxide)-b-polypropylene), polyacrylonitrile-b-polyisobutylene, polyethylene oxide-b-poly(ethylene oxide) )-b-polyisobutylene), polyacrylonitrile-b-polyethylene, polyethylene oxide-b-polyethylene (poly(ethylene oxide)-b-polyethylene), polyacrylonitrile-b- Polyacrylonitrile-b-polyisopyrene, polyethylene oxide-b-polyisopyrene, polyacrylonitrile-b-polychloroprene, polyethylene oxide- b-poly(ethylene oxide)-b-polychloroprene, polyacrylonitrile-b-polystyrene (p olyacrylonitrile-b-polystyrene), polyethylene oxide-b-polystyrene (poly(ethylene oxide)-b-polystyrene), and the like.

According to an embodiment, the master substrate 146 may have various shapes. For example, the master substrate 146 may have a shape such as a triangle, a square, a pentagon, and a circle. The shape of the master substrate 146 is not limited.

According to an embodiment, the master substrate 146 may be coated. For example, the master substrate 146 may be coated through an anodizing method. According to another embodiment, the master substrate 146 may be quenched after heat treatment. Accordingly, hardness of the master substrate 146 may be improved. In this case, a target pattern TG _P to be described later may be easily formed. In addition, durability of the master substrate 146 may be improved, and reliability of a process of forming a target pattern TG _P to be described later may be improved.

One end of the ram head 142 may face the target substrate TG. Accordingly, the master substrate 146 may face the target substrate TG. In addition, the master pattern (not displayed) may also face the target substrate TG.

As described above, the ram head 144 included in the patterning module 140 may linearly reciprocate in the third direction (Z-axis direction). Accordingly, the master pattern (not displayed) and the target substrate TG may be contacted and separated.

According to an embodiment, a voltage may be applied to the ram head 144 and the target substrate TG before the master pattern (not displayed) and the target substrate TG come into contact. When a voltage is applied to the ram head 144, the master substrate 146 disposed at one end of the ram head 144 may be charged. In addition, the target substrate TG may also be charged. When the master substrate 146 and the target substrate TG are charged, surrounding dust may easily adhere to the master substrate 146 and the target substrate TG. Dust adhered to the master substrate 146 and the target substrate TG may be removed. Thus, dust is to intervene in the target pattern to be described later _(P TG) forming step, a target pattern _(P TG) conditions are not easily formed can be prevented.

The dust removal process by applying the above-described voltage is performed not only before the master pattern (not shown) and the target substrate TG come into contact, but also after the master pattern (not shown) and the target substrate TG are separated. I can. That is, the order of the dust removal process through voltage application is not limited.

5 and 6 are diagrams illustrating that a target pattern is formed on a target substrate by the patterning apparatus according to an exemplary embodiment of the present invention.

1, 5, and 6, when the master pattern 146P included in the master substrate 146 is in contact with the target substrate TG, the patterning module 140 is the target substrate ( Pressure can be applied on TG). Accordingly, a target pattern TG _P may be formed on the target substrate TG. According to an embodiment, the pressure applied on the target substrate TG may be controlled according to the type of material of the target substrate TG.

The target pattern TG _P may have an inverse phase of the master pattern 146P. Specifically, the target pattern (TG _P ) includes a concave portion (TG _P1 ) and a convex portion (TG _P2 ), and the concave portion (TG _P1 ) of the target pattern (TG _P ) is of the master pattern 146 It may correspond to the convex portion 146P ₂ . In addition, the convex portion TG _P2 of the target pattern TGP may correspond to the concave portion 146 _P1 of the master pattern 146.

According to an embodiment, the target substrate TG and the master pattern 146P may be in contact with each other a plurality of times. In this case, for each contact number, the master pattern 146P may contact different regions on the target substrate TG. Hereinafter, a process of forming the target pattern TG _P on different regions of the target substrate TG will be described with reference to FIGS. 6 to 11.

7 is a diagram illustrating an example of a target substrate divided into a plurality of regions, and FIGS. 8 to 12 illustrate a process of forming a target pattern in different regions on a target substrate by a patterning apparatus according to an embodiment of the present invention. It is a drawing showing.

Referring to FIG. 7, the target substrate TG may be divided into a plurality of regions. For example, the target substrate TG may be divided into _first to twelfth regions TG ₁ to TG ₁₂ as shown in FIG. 7. The shape and size of the divided target substrate TG are not limited.

7 to 12, the target patterns TG _P may be formed in the first to twelfth regions TG ₁ to TG ₁₂ , respectively. To this end, the master pattern (not displayed) may contact each of the first to twelfth regions TG ₁ to TG ₁₂ .

According to an embodiment, in order for the master pattern (not displayed) to contact different regions on the target substrate TG, the movement of the stage 130 may be controlled. Accordingly, movement of the target substrate TG in the first and second directions may be controlled. That is, as the target substrate TG is moved in the first and second directions by the stage 130, different regions on the target substrate TG and the master pattern (not shown) may be in contact. .

For example, as shown in FIG. 10, after the target pattern (not displayed) is formed on the first region TG ₁ , the target substrate TG is moved in the first direction, and the master pattern Can be in contact with (146). By repeating the above-described method, as illustrated in FIG. 11, the target pattern (not displayed) may be formed on the second to fourth regions TG ₂ , TG ₃ , and TG ₄ .

After the target pattern (not displayed) is formed on the fourth area TG ₄ , the target substrate TG is moved in the first and second directions, so that the fifth area TG ₅ is also A target pattern (not displayed) may be formed. By repeating the above-described method, as shown in FIG. 12, the target pattern (not displayed) may be formed in all of the _first to twelfth regions TG ₁ to TG ₁₂ .

According to an embodiment, after the target pattern (not displayed) is formed, before the target substrate TG is moved, the ram head 144 may be rotated. Accordingly, the master pattern (not displayed) may also be rotated. Accordingly, target patterns having different shapes may be formed in the first region TG ₁ to the twelfth region TG ₁₂ . For example, a target pattern having an inverse image of the master pattern may be formed in the first region TG ₁ . In contrast, an inverse image of the master pattern rotated by 90° may be formed in the second region TG ₂ .

According to an embodiment, the ram head 144 may include a marking pattern (not displayed). When the master pattern (not displayed) and the target substrate TG are in contact, the marking pattern (not displayed) may also contact the target substrate TG. When the marking pattern (not displayed) contacts the target substrate TG, an alignment pattern (not displayed) may be formed on the target substrate TG. The alignment pattern may distinguish between the first to twelfth regions TG ₁ to TG ₁₂ included in the target substrate TG. As a result, the target patterns respectively formed on the first to twelfth regions TG ₁ to TG ₁₂ can be easily distinguished by the alignment pattern (not displayed).

The patterning apparatus according to an embodiment of the present invention includes the target substrate preparation unit 200 on which the target substrate TG is prepared, the target substrate moving unit 300 for moving the target substrate TG, and the target substrate. And the patterning part 100 which receives the target substrate TG from the moving part 300 and forms a pattern on the target substrate TG, wherein the patterning part 100 is in the first direction, And the stage 130 which is moved in the second direction perpendicular to the first direction and on which the target substrate is disposed, and extends in a third direction perpendicular to the first and second directions, and the third And the patterning module 140 on which the master substrate 146 including a master pattern that is in contact with and separated from the target substrate TG is mounted as it is linearly moved in the direction, and the target substrate TG and the master When the pattern 146 is in contact, the patterning module 140 applies pressure on the target substrate TG to form a target pattern having an inverse phase of the master pattern 146 on the target substrate TG. It may include letting go. Accordingly, a patterning apparatus capable of manufacturing patterns having various sizes and shapes on a large area on various substrates may be provided.

In the above, a patterning device according to an embodiment of the present invention has been described. Hereinafter, the patterning device according to the first modified example in which coils are disposed on the outer and inner surfaces of the ram head, the patterning device according to the second modified example for manufacturing a target pattern that can be used as a piezoelectric material, The patterning device according to the third modified example, and the patterning device according to the fourth modified example for irradiating a laser to a target pattern will be described.

13 and 14 are diagrams illustrating a ram head included in the patterning device according to the first modified example of the present invention.

The patterning apparatus according to the first modified example of the present invention may include a patterning unit 100, a target substrate preparation unit 200, and a target substrate moving unit 300. The patterning unit 100, the target substrate preparation unit 200, and the target substrate moving unit 300 are the patterning unit included in the patterning apparatus according to the embodiment described with reference to FIGS. 1 to 12 ( 100), may be the same as the target substrate preparation unit 200 and the target substrate moving unit 300. Accordingly, detailed descriptions are omitted.

However, in the patterning device according to the first modified example, the patterning module 140 included in the patterning unit 100 may include a support member 142, a ram head 144, and a coil C. have. That is, compared to the patterning module 140 according to the embodiment, the coil C may be further included.

According to an embodiment, the coil C may be disposed on a region of the outer peripheral surface of the ram head 144 as shown in FIG. 13. Specifically, the coil C may be disposed around one end of the ram head 144 on which the master substrate 146 is disposed. According to another embodiment, the coil C may be disposed in a region inside the ram head 144 as shown in FIG. 14. Specifically, the coil C may be disposed in an area near the inside of one end of the ram head 144 where the master substrate 146 is disposed.

The coil C may heat-treat one end of the ram head 144. When one end of the RAM head 144 is heat treated, the master substrate 146 disposed at one end of the ram head 144 may also be heat treated. Accordingly, while the master substrate 146 is heat-treated, the target pattern TG may be formed. In this case, compared to the case where the target pattern TG is formed on the master substrate 146 without heat treatment, the formation efficiency of the target pattern TG may be improved.

15 is a diagram illustrating a patterning process through a patterning device according to a second modified example of the present invention, and FIG. 16 is a diagram illustrating a target pattern formed through the patterning device according to a second modified example of the present invention.

The patterning apparatus according to the second modified example of the present invention may include a patterning unit 100, a target substrate preparation unit 200, and a target substrate moving unit 300. The patterning unit 100, the target substrate preparation unit 200, and the target substrate moving unit 300 are the patterning unit included in the patterning apparatus according to the embodiment described with reference to FIGS. 1 to 12 ( 100), may be the same as the target substrate preparation unit 200 and the target substrate moving unit 300. Accordingly, detailed descriptions are omitted.

15 and 16, the patterning apparatus according to the second modified example includes the master substrate 146 and the target substrate TG in a state in which the master substrate 146 and the target substrate TG are in contact. ) Can form a potential difference. For a specific example, a (+) voltage may be applied to the master substrate 146 in a state in which the master substrate 146 and the target substrate TG are in contact. In this case, a polarization phenomenon may occur in the target substrate TG in contact with the master substrate 146 to which a (+) voltage is applied. Specifically, as shown in FIG. 16, a portion of the target pattern TG _P formed in contact with the master substrate 146 is charged with a negative (-), and the target substrate TP opposite to the target pattern TG _P The lower part of) can be charged with (+).

As a result, the target substrate TG including the target pattern TG _P and subjected to polarization treatment may be manufactured. The target substrate TG including the target pattern TG _P and subjected to polarization treatment may be used as a piezoelectric material. That is, in the patterning apparatus according to the second modified example, by applying a voltage to the master substrate 146 in a state in which the master substrate 146 and the target substrate TG are in contact, the master substrate 146 And by a simple method of generating a potential difference between the target substrates (TG), it is possible to easily manufacture a target substrate used as a piezoelectric material.

17 is a diagram illustrating a ram head included in a patterning device according to a third modified example of the present invention, and FIG. 18 is a diagram illustrating a target substrate on which a target pattern is formed through a patterning device according to a third modified example of the present invention. .

The patterning apparatus according to the third modified example of the present invention may include a patterning unit 100, a target substrate preparation unit 200, and a target substrate moving unit 300. The patterning unit 100, the target substrate preparation unit 200, and the target substrate moving unit 300 are the patterning unit included in the patterning apparatus according to the embodiment described with reference to FIGS. 1 to 12 ( 100), may be the same as the target substrate preparation unit 200 and the target substrate moving unit 300. Accordingly, detailed descriptions are omitted.

However, in the patterning apparatus according to the third modified example, the patterning module 140 included in the patterning unit 100 may include a support member (not shown), a ram head 144, and a light source L. . In addition, the ram head 144 may include a recessed area SA, as shown in FIG. 17. Specifically, the recessed area SA may be disposed in an inclined section in which a diameter of the ram head 144 becomes narrower.

According to an embodiment, the light source L may be disposed inside the recessed area SA. For example, the light source L may be an ultraviolet (UV) irradiation device. Ultraviolet rays (UV) irradiated from the light source L may be provided to the target substrate TG. In this case, the depression area SA may serve as a guide to limit the area of the target substrate TG to which ultraviolet rays are irradiated. That is, the ultraviolet rays irradiated from the light source L may be provided to a specific area on the target substrate TG as guided by the depression area SA. Specifically, ultraviolet rays guided by the depression area SA may be provided to a region of the target substrate TG that is in contact with the master substrate 146.

Specifically, as described with reference to FIGS. 8 to 12, the master substrate 146 sequentially contacts the _first to twelfth regions TG ₁ to TG ₁₂ on the target substrate TG. In this case, the ultraviolet rays may also be sequentially provided to the _first to twelfth regions TG ₁ to TG ₁₂ . The ultraviolet rays may cure the target substrate TG. As a result, the target pattern TG _P formed on the _first to second regions TG ₁ to TG ₁₂ may be sequentially cured.

When the target patterns (not shown) formed on the _first to twelfth areas TG ₁ to TG ₁₂ are sequentially cured, the reliability of forming the target patterns (not shown) may be improved. Specifically, as shown in FIG. 18, in a state in which the target pattern (not shown) formed on the first region TG ₁ is cured, the target pattern (not shown) is on the second region TG ₂ . City) if formed, wherein the target pattern (not shown formed on the first region (TG ₁₎₎ according to has a high hardness, the first region (TG ₁₎ and adjacent said second region (TG ₂ ) Can easily withstand the pressure applied to it.

In contrast, when the target pattern (not shown) formed on the first region TG ₁ is not cured and a pressure is applied to the second region TG ₂ , it is formed on the first region. The target pattern (not shown) may be damaged.

That is, the patterning device according to the third modified example may cure the formed target pattern (not shown) through ultraviolet rays after forming the target pattern (not shown) on a specific region on the target substrate TG. have. Accordingly, while the plurality of target patterns (not shown) are formed on the target substrate TG, damage to the previously formed target patterns (not shown) is prevented, so that the reliability of target pattern formation may be improved.

19 is a view showing a side view of a ram head included in a patterning device according to a fourth modified example of the present invention, and FIG. 20 is a view showing a perspective view of a ram head included in the patterning device according to a fourth modified example of the present invention to be.

The patterning apparatus according to the fourth modified example of the present invention may include a patterning unit 100, a target substrate preparation unit 200, and a target substrate moving unit 300. The patterning unit 100, the target substrate preparation unit 200, and the target substrate moving unit 300 are the patterning unit included in the patterning apparatus according to the embodiment described with reference to FIGS. 1 to 12 ( 100), may be the same as the target substrate preparation unit 200 and the target substrate moving unit 300. Accordingly, detailed descriptions are omitted.

However, in the patterning device according to the fourth modified example, the patterning module 140 included in the patterning unit 100 includes a support member 142, a ram head 144, a bridge B, and a light source L It may include. According to an embodiment, the bridge B may be connected to one side of the ram head 144. The light source L may be disposed at one end of the bridge B. That is, the light source L is disposed at one end of the bridge B, and the other end of the bridge B may be connected to one side of the ram head 144. The light source L may be a laser irradiation device.

The laser irradiated from the light source L may be provided to a specific area on the target substrate TG. Specifically, like the light source L included in the patterning device according to the third modified example described with reference to FIGS. 17 and 18, a laser may be provided on a specific area in which the target pattern TGP is formed. . The laser may also cure the target pattern TGP.

As a result, after forming the target pattern TG _P on a specific region on the target substrate TG, the patterning device according to the fourth modified example may cure the formed target pattern TG _P through a laser. I can. Accordingly, while the plurality of target patterns TG _P are formed on the target substrate TG, damage to the previously formed target patterns TG _P may be prevented, thereby improving reliability of target pattern formation.

According to an embodiment, the angle of the bridge B may be controlled. In addition, rotation of the RAM head 144 may be controlled. Accordingly, the laser irradiated through the light source can be easily irradiated to a specific area of the target pattern TGP.

In the above, the present invention has been described in detail using preferred embodiments, but the scope of the present invention is not limited to specific embodiments, and should be interpreted by the appended claims. In addition, those who have acquired ordinary knowledge in this technical field should understand that many modifications and variations can be made without departing from the scope of the present invention.

100: patterning device
130: stage
140: patterning module
142: support member
144: ramhead
146: master board

Claims (10)

A patterning device including a target substrate preparation unit in which a target substrate is prepared, a target substrate moving unit for moving the target substrate, and a patterning unit for receiving the target substrate from the target substrate moving unit and forming a pattern on the target substrate In,
The patterning part,
A stage moving in a first direction and in a second direction perpendicular to the first direction and on which the target substrate is disposed; And
A support member, a RAM head supported by the support member, extending in a third direction perpendicular to the first and second directions, and linearly reciprocating in the third direction, and disposed at one end of the RAM head to the Patterning including a master substrate including a master pattern that is in contact with and separated from the target substrate according to a linear reciprocating motion of the REM head, and a light source disposed in a recessed area formed on a sidewall of the REM head to irradiate light to the target substrate Including modules,
When the target substrate and the master pattern are in contact, the patterning module applies pressure on the target substrate to form a target pattern having an inverse image of the master pattern on the target substrate,
And the light irradiated from the light source is guided by the recessed area and provided on the target substrate in contact with the master substrate.
The method of claim 1,
The target substrate is moved in the first direction and the second direction according to the movement of the stage,
The target substrate and the master pattern are contacted a plurality of times,
And each contacting number, wherein the master pattern is in contact with different regions on the target substrate.
The method of claim 1,
The hardness of the master pattern is higher than that of the target substrate,
A patterning apparatus comprising controlling the pressure applied on the target substrate according to a material type of the target substrate.
delete The method of claim 1,
The master substrate is a patterning device comprising a carbon tape adhered to one end of the ram head.
The method of claim 1,
The master substrate includes a plurality of master patterns,
A patterning device comprising a plurality of the master patterns each having a different shape.
Arranging a target substrate on the target substrate preparation unit;
Disposing a master substrate having a master pattern on the RAM head of the patterning module;
Moving the target substrate onto a stage;
Moving the stage on which the target substrate is mounted to face the RAM head;
Forming a target pattern having an inverse image of the master pattern on the target substrate by moving the RAM head of the patterning module toward the stage, contacting the master substrate and the target substrate, and applying pressure; And
Curing the target pattern by irradiating light onto the target substrate in contact with the master substrate through a light source disposed in the recessed area formed on the sidewall of the REM head,
And the light irradiated from the light source is guided by the recessed area and provided on the target substrate in contact with the master substrate.
The method of claim 7,
The step of forming the target pattern,
Forming a target pattern having an inverted image of the master pattern on a region of the target substrate by contacting and applying pressure to a region of the target substrate and the master substrate;
Separating the target substrate and the master substrate; And
An operating method of a patterning apparatus comprising the step of forming a target pattern having an inverse image of the master pattern on the other region of the target substrate by contacting and applying pressure to another region other than one region of the target substrate and the master substrate .
The method of claim 8,
The step of separating the substrate and the step of forming the target pattern on the other region of the target substrate are repeatedly performed a plurality of times to form a plurality of target patterns on the target substrate.
The method of claim 9,
The method of operating a patterning device comprising the plurality of target patterns are arranged in a two-dimensional by forming a row and column.

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