1292347 九、發明說明： 【發明所屬之技術領域】 概略言之，本發明之領域係有關壓印微影術。特別本 發明係針對減少於壓印微影術製程期間使用壓印 5模板特徵結構所需時間。 ，、補 C先前技術】 發明背景 微製造涉及製造極小型結構，例如約為微米或以下尺 寸之特徵結構。微製造有重大影響之領域係於積體電路製 1〇程。隨著半導體製程產業不斷尋求提高製造良率，同時增 加於一基材上製成之每單位面積電路數目，微製造之重要 性不斷升高。微製造提供較大製程控制，同時允許縮小所 形成之特徵結構之最小尺寸。其它採用微製造之發展領域 包括生物技術、光學技術、機械系統等。 15 微製造技術之範例方法顯示於Willson等人之美國專利 第6,334,960號。Willson等人揭示一種於一結構形成凸紋影 像之方法。該方法包括提供一基材其具有一轉印層。該轉 印層係以可聚合之流體組成物覆蓋。一模具係與該可聚合 流體作機械接觸。該模具包括凸紋結構，以及可聚合流體 20 組成物填補該凸紋結構。然後可聚合流體組成物置於固化 條件下來聚合該可聚合流體組成物，形成固化後之聚合物 料於轉印層上，其含有與模具之凸紋結構互補的凸紋結 構。然後模具與固體聚合物料分開，讓模具凸紋結構之複 本形成於固化後之聚合物料。轉印層及固化後之聚合物料 置於選擇性蝕刻環境下，來相對於該固化 以及藉此技輯提供之最小特徵結構尺寸係依據可聚合材 料組成決定。 5 因此希望提供一種技術，其可縮短填補歷印微影術模 板之特徵結構所需時間。 【考务明内溶L】 發明概要 本發明係針對一種分配複數個彼此隔開之小液滴於一 1〇基材上之方法，該方法之特徵在於小液滴之液體必須行進 到達相鄰液滴來形成連續液體層於該基材上所需行進的距 離取小化。結果當以圖案化模板來將小液滴製作圖案時， ^補圖案特徵結構及覆蓋基材所需時間最小化。如此提高 壓印製程之產量。為了達成該項目的，該方法包括設置複 15數個彼此隔開之小液滴於該基材上，個別液滴具有其相關 之單位體積。複數個小液滴之一個子集之相鄰小液滴間之 間1M系4擇依據該子集相關之最小單位體積之函數變化而 改交。結果相鄰小液滴間之距離變最小化，且單純依據小 液滴分配裝置之解析度決定。 、也揭不種傳導性模板以及一種形成傳導性模板之方 去°亥方法包括提供一基材；形成-平台於該基材；以及 Ζ成複數個凹部及凸部於該平台，凹部之底端包含導電材 ； 、 卩匕έ電絕緣材料。希望平台對預定輕射波長 [】士 ％外光h射實質為透明。結果希望由允許紫外輻射傳 1292347 播通過其中之材料來製成導電材料。於本發明，銦錫氧化 物為製造導電材料之適當材料。但銦錫氧化物由於有蝕刻 抗性故難以製作圖案。雖言如此，本方法提供使用銦氧化 物形成傳導性模板及適合用於壓印微影術之方式。此等及 5 其它具體例進一步討論如後。 圖式簡單說明 第1圖為根據本發明之微影術系統之透視圖； 第2圖為第1圖所示微影術系統之簡化仰視圖； 第3圖為第2圖所示壓印層組成材料於聚合與交聯前之 10 簡化代表圖； 第4圖為交聯後聚合物料於接受輻射照射而轉變為第3 圖所示材料之簡化代表圖； 第5圖為第1圖所示與壓印層隔開之模具，於壓印層製 作圖案後之簡化仰視圖； 15 第6圖為根據本發明之第一具體例，如上第2圖所示， 沉積於基材上一區之壓印材料小滴陣列之俯視圖； 第7圖為根據本發明之一具體例，第2圖所示模具之懸 臂樑式衝擊衝擊於第6圖所示小滴陣列之簡化示意圖； 第8-11圖為俯視圖，顯示如上第6圖所示小滴採用第7 20 圖所示模具之懸臂樑式衝擊壓縮； 第12圖為根據本發明之另一具體例，具有個別可定址 之電導體之模具之底視圖； 第13圖為第12圖所示模板之側視剖面圖； 第14圖為根據本發明之又另一具體例，採用來製造模 1292347 板之基材之俯視圖； 第15圖為第14圖所示基材該區沿線丨5-15所取之側視 剖面圖； 第16-23圖為第15圖所示該區之側視剖面圖，顯示用來 5製造第13圖所示模板之各項處理過程； 第24圖為根據本發明之第四具體例，第6圖所示該區之 俯視圖，帶有壓印材料小滴沉積於一陣列； 第25圖為根據本發明之第五具體例，採用第2圖所示模 具壓縮如上於第24圖所示小滴之俯視圖； 10 f26®為根據本發明之第六具體例，模板之剖面圖； 第27圖為根據本發明之第七具體例，採用來製造第％ 圖所示模板之基材之俯視圖； 苐28圖為第27圖所+ |从 γ-, 口所不基材一區沿線28-28所取之剖面 第29_30圖為第28圖所示該區之剖面圖，顯示用來擊造 第26圖所示模板之各項處理過程。 … 【實施方式】 較佳實施例之詳細說明 - 之橋式支持雜12其具有-橋接器， 此隔開，合於橋為橋:器14及平台支持體16彼 橋接器Η朝向平台咖】為―麼印頭18，壓印頭_由 設置於平台支 、杜6延伸，提供沿Ζ軸方向之移動。 上㈣對騎聊者為義平台20。 20 1292347 移動平台20組配來相對於平台支持體16沿又轴及沿 動。須了解，Μ印頭18可提供沿χ軸及㈣之移動，也可提 供沿Ζ軸之移動；移動平台2〇可提供於2軸之移動，也可提 供沿X及Υ軸之移動。範例移動平台裝置係揭示於美國專利 5申請案第10/194,414號，申請曰2002年7月11日，名稱「步 進與重複壓印微影術系統」，該案讓與本發明之受讓人，該 案全文以引用方式併入此處。輻射源22麵合至系統1〇，來 照射光化輕射於移動平台20。如圖所示，輕射源22仙合 至橋接器14，包括一發電機23連結至輻射源22。系統操作 1〇典型係藉處理器25控制，處理器25係與系統呈資料通訊。 芩照第1圖及第2圖，連結至壓印頭18者為一模板26， 模板26上有模具28。模具28包括複數個特徵結構，其係由 複數個彼此隔開之凹部28a及凸部28b所界限。複數個特徵 結構界定一原始圖案，該圖案將被轉印至位於移動平台2〇 15之基材30。為了達成該項目的，壓印頭18及/或移動平台2〇 可改變模具28與基材30間之距離「d」。藉此方式，模具28 之特徵結構可被壓印於基材3〇之可流動區，容後詳述。輕 射源22係定位成讓模具28位在輻射源22與基材3〇間。結 果，模具28係由一種材料製成，該材料允許模具28對輻射 20源22產生之輻射實質上為透明。為了達成該項目的，模具 28可由下列材料製成，模具28之材料包括石英、融合矽氧、 矽、藍寶石、有機聚合物、矽氧烷、聚合物類、硼矽酸玻 璃、氟化碳聚合物或其組合。此外，模板26可由前述材料 以及由金屬製成。 1292347 參照第2圖及第3圖，可流動區例如壓印層34係設置於 表面32之呈現實質上平坦側繪圖之部分。範例可流動區係 由壓印層34組成，壓印層34設置為複數個彼此隔開之離散 材料36a小液滴36於基材30上，容後詳述。沉積小液滴36之 5 範例系統係揭示於美國專利申請案第10/191,749號，申請曰 2002年7月9日，名稱「分配液體之系統及方法」，該案讓與 本發明之受讓人，該案全文以引用方式併入此處。壓印層 34係由一種材料36a製成，該材料36a可選擇性聚合且交聯 來將原先圖案記錄於其中，定義所記錄之圖案。材料36&之 10範例組成揭示於美國專利申請案第10/463,396號，申請曰 2003年6月16日，名稱「減少隨形區與模具圖案間之黏著之 方法」，該案全文以引用方式併入此處。材料36a於第4圖顯 示為交聯於點36b，形成交聯後之聚合物料36c。 參照第2、3及5圖，經由以機械方式接觸模具28而部分 15製造記錄於壓印層34之圖案。為了達成該項目的，縮短距 離「d」，讓壓印小滴以機械方式接觸模具28，展開小滴％， 幵》成壓印層34，有連續材料36a形成於表面32上方。一具體 例中，縮短距離「d」，讓壓印層34之子部分3如可進入2部 28a而填補凹部28a。 ⑴為了輔助填補凹部28a，材料36a被提供所需性質，來 完全填補凹部28a，同時以連續成形材料來覆蓋表面 M。本具體射，於達成所需距離「d」通常為最小距離rd」 後，仍然保有愿印層34子部分施重疊凸部鳥，留下厚/ 之子部分地及厚度t2之子部分3扑。依據應用用途而定，厚 1292347 度咖2可有任-種期望厚度。典型地，ti經選擇机不大於· 子部分34a寬度u之兩倍亦即t<2u，更明白顯示於第5圖。 參照第2、3及4圖’於達到預定距離「d」後，轄射源 22產生光化輪射’光化輕射聚合且交聯材料恤，形成已六 5聯之聚合物料結果，壓印層34之組成由材料他轉^ 成交聯後之聚合物料36c，材料36c為固態。特別交聯聚人 物料36c固化而獲得壓印層34側部34e，其形狀係吻合模^ 28表面28c形狀，更明白顯示於第5圖。於騎層％轉變成 由交聯聚合物料細組成(如第4圖所示)後，第2圖所示之· # H)印頭18移動，距離「d」加大，模具28與壓印層料彼此隔開。 參照第5圖’可採用其它處理來完成基材30之圖案製 造。例如基材30及壓印層34可經㈣，將壓印層％之圖帛 轉印至基材30’提供圖案化表面34c。為了輔助姓刻，形成 壓印層34之材料可改變來如所需界定相對於基材％之相對 15 蝕刻速率。 參照第2、3及6圖，為了讓模具具有極為緊密之特徵結 構，例如奈米尺寸之凹部28a，於重疊模具28之基材川㈣ _ 40展開小滴36,來填補凹部28a可能需要長期時間，因而減 t交壓印過私之生產。為了輔助提高壓印過程之生產，分配 20小滴36，來最小化展開小滴36於基材30以及小滴36填補凹 部28a所需時間。此項目的可經由呈二維矩陣陣列42分配小 滴36，讓相鄰小滴36間之間隔(顯示為心及心)為最小化來達 成此項目的。如圖所示，矩陣陣列42之小滴36面積係於六ό 行nrn6及六列mrm0之範圍。但實質上小滴％可排列成基材 11 1292347 30上之任何二維排列。對形成預定圖案化層所需壓印材料 36a之指定總體積Vt而言，希望最大化矩陣陣列42之小滴％ 數目。如此最小化相鄰小滴間之間隔81及心。此外希望於 該子集之各個小滴36具有實質上等量之壓印材料與其 5結合，定義為一單位體積Vu。基於此等標準，可決定於矩 陣陣列42之小滴36總數測定如後·· (1) n=Vt/Vu 此處vt&vu定義如前。假設小滴36為方形矩陣，此處 小滴36總數η定義如後： ^ 10 15 20 (2) n=niX n2 此處η!為沿第一方向之小滴數目，七為沿第二方向之 滴數目。沿第-方向換言之於―維度之相鄰小滴36間= 隔3!測定如後： 1 此處q為區40沿第-方向之長度。同理，沿㈣第— 方向之第二方向之相鄰小滴36間之間叫測定如後： (4) S2=L2/n2 此處L2為區4〇沿第二方向之長度。 =關聯各小滴36之壓印材料36a單位體積係依據配 送衣置決'，顯'然間叫料係依據解析度而亦即r 用來形成小滴36之小滴分配裝置（圖中 — 木 禾”、、員不）之操作批也| 而定姻教分配裝置（财未顯示)設置有最小量壓特 料36a於各個小滴36,因此可精準控制小滴的分配。二 式各小滴36必須前進通過之壓印材 9万 面1292347 IX. Description of the invention: [Technical field to which the invention pertains] Briefly, the field of the invention relates to imprint lithography. In particular, the present invention is directed to reducing the time required to use the embossed 5 template features during the imprint lithography process. BACKGROUND OF THE INVENTION Microfabrication involves the fabrication of very small structures, such as features of the order of microns or less. The areas where microfabrication has a major impact are based on the integrated circuit system. As the semiconductor process industry continues to seek to increase manufacturing yields while increasing the number of circuits per unit area made on a substrate, the importance of microfabrication continues to increase. Microfabrication provides greater process control while allowing for a reduction in the minimum size of the features formed. Other areas of development that use microfabrication include biotechnology, optical technology, mechanical systems, and more. An example of a microfabrication technique is shown in U.S. Patent No. 6,334,960 to Willson et al. Willson et al. disclose a method of forming a relief image in a structure. The method includes providing a substrate having a transfer layer. The transfer layer is covered with a polymerizable fluid composition. A mold is in mechanical contact with the polymerizable fluid. The mold includes a relief structure and a polymerizable fluid 20 composition fills the relief structure. The polymerizable fluid composition is then subjected to curing conditions to polymerize the polymerizable fluid composition to form a cured polymer onto the transfer layer which has a relief structure complementary to the relief structure of the mold. The mold is then separated from the solid polymer material and a replica of the mold relief structure is formed on the cured polymer material. The transfer layer and the cured polymer material are placed in a selective etching environment relative to the curing and the minimum feature size provided by the technique is determined by the polymerizable material composition. 5 It is therefore desirable to provide a technique that can reduce the time required to fill the features of the lithography template. SUMMARY OF THE INVENTION The present invention is directed to a method of dispensing a plurality of spaced apart droplets onto a substrate, the method being characterized in that the liquid of the droplets must travel to reach the adjacent The distance traveled by the droplets to form a continuous liquid layer on the substrate is minimized. As a result, when the small droplets are patterned by patterning the template, the time required to complement the pattern features and cover the substrate is minimized. This increases the yield of the imprint process. To achieve this, the method includes providing a plurality of spaced apart droplets on the substrate, each droplet having its associated unit volume. The 1M system between adjacent small droplets of a subset of the plurality of small droplets is changed according to a function of the smallest unit volume associated with the subset. As a result, the distance between adjacent small droplets is minimized and is determined solely by the resolution of the droplet dispensing device. Also, a conductive template is not disclosed, and a method for forming a conductive template includes: providing a substrate; forming a platform on the substrate; and forming a plurality of concave portions and convex portions on the platform, the bottom of the concave portion The end comprises a conductive material; and the electric insulating material. It is hoped that the platform will be transparent to the predetermined light-wavelength wavelength. As a result, it is desirable to make a conductive material from a material that allows ultraviolet radiation to pass through 1292347. In the present invention, indium tin oxide is a suitable material for the manufacture of a conductive material. However, indium tin oxide is difficult to pattern due to etching resistance. Although so, the method provides a means of forming a conductive template using indium oxide and suitable for use in embossing lithography. These and other specific examples are discussed further below. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of a lithography system according to the present invention; Fig. 2 is a simplified bottom view of the lithography system shown in Fig. 1; and Fig. 3 is an embossed layer shown in Fig. 2. A simplified representation of the constituent materials before polymerization and cross-linking; Figure 4 is a simplified representation of the transition of the polymer material after irradiation to a material shown in Figure 3; Figure 5 is a simplified representation of the material shown in Figure 1. a simplified bottom view of the mold separated from the embossed layer after patterning the embossed layer; 15 Fig. 6 is a first embodiment of the present invention, as shown in Fig. 2, deposited on a substrate A top view of an array of embossed material droplets; Fig. 7 is a simplified schematic view of a cantilever beam impact impact of the mold shown in Fig. 2 on the array of droplets shown in Fig. 6 according to a specific example of the present invention; The figure is a top view showing the cantilever beam impact compression of the mold shown in Fig. 6 using the mold shown in Fig. 7 20; and Fig. 12 is a mold having individual addressable electric conductors according to another embodiment of the present invention. The bottom view; Figure 13 is a side cross-sectional view of the template shown in Figure 12; Figure 14 In accordance with still another embodiment of the present invention, a top view of a substrate for forming a mold 1292347 is used; and FIG. 15 is a side cross-sectional view of the substrate shown in FIG. 14 taken along line -155-15; 16-23 is a side cross-sectional view of the area shown in Fig. 15, showing the various processes for manufacturing the template shown in Fig. 13; and Fig. 24 is a fourth embodiment according to the present invention, the sixth The top view of the zone is shown with droplets of embossed material deposited in an array; Figure 25 is a fifth embodiment of the invention, using the mold shown in Fig. 2 to compress the droplets as shown in Fig. 24 10 f26® is a cross-sectional view of a template according to a sixth specific example of the present invention; and FIG. 27 is a plan view of a substrate used for manufacturing the template shown in the %th drawing according to a seventh specific example of the present invention; Figure 28 is the picture of Figure 27 + | from γ-, the section of the substrate is not taken along the line 28-28. Figure 29_30 is a sectional view of the area shown in Figure 28, showing the 26th The various processes of the template shown in the figure. [Embodiment] Detailed Description of the Preferred Embodiment - The bridge type support 12 has a bridge, which is separated, and the bridge is a bridge: the device 14 and the platform support 16 are bridged to the platform. For the embossing head 18, the embossing head _ is extended by the platform support and the Du 6 to provide movement along the y-axis. On the (four) on the rider as a platform for justice 20 . 20 1292347 The mobile platform 20 is configured to be along the axis and along the platform support 16 . It should be understood that the print head 18 can provide movement along the χ axis and (4), and can also provide movement along the Ζ axis; the mobile platform 2 〇 can provide movement on the 2 axes, and can also provide movement along the X and the Υ axis. An example of a mobile platform device is disclosed in U.S. Patent Application Serial No. 10/194,414, filed on Jul. 11, 2002, entitled "Step and Repetitive Imprinting Microfilm System", which allows for the transfer of the present invention. The full text of the case is hereby incorporated by reference. The radiation source 22 is surfaced to the system 1A to illuminate the actinic light onto the mobile platform 20. As shown, the light source 22 is coupled to the bridge 14, including a generator 23 coupled to the radiation source 22. System Operation 1 〇 is typically controlled by processor 25, which is in communication with the system. Referring to Figures 1 and 2, the template 18 is attached to the stamping head 18, and the template 26 has a mold 28. The mold 28 includes a plurality of features defined by a plurality of recesses 28a and projections 28b spaced apart from each other. The plurality of features define an original pattern that will be transferred to the substrate 30 at the mobile platform 2〇15. In order to achieve this, the stamping head 18 and/or the moving platform 2 can change the distance "d" between the mold 28 and the substrate 30. In this manner, the features of the mold 28 can be embossed into the flowable region of the substrate 3, as will be described in detail later. The light source 22 is positioned such that the mold 28 is positioned between the radiation source 22 and the substrate 3. As a result, the mold 28 is made of a material that allows the mold 28 to be substantially transparent to the radiation generated by the source 20 of the radiation 20. To achieve this, the mold 28 can be made of the following materials: the material of the mold 28 includes quartz, fused yttrium, yttrium, sapphire, organic polymer, siloxane, polymer, borosilicate glass, fluorinated carbon polymerization. Or a combination thereof. Further, the template 26 can be made of the aforementioned materials as well as metal. 1292347 Referring to Figures 2 and 3, a flowable region, such as embossed layer 34, is disposed on a portion of surface 32 that presents a substantially flat side drawing. The exemplary flowable region is comprised of an embossed layer 34 that is disposed as a plurality of discrete material 36a droplets 36 spaced apart from each other on a substrate 30, as described in more detail below. Example 5 of depositing small droplets 36 is disclosed in U.S. Patent Application Serial No. 10/191,749, filed on Jul. 9, 2002, entitled "System and Method for Dispensing Liquids", which allows for the transfer of the present invention. The full text of the case is hereby incorporated by reference. The embossed layer 34 is made of a material 36a which is selectively polymerizable and crosslinked to record the original pattern therein to define the recorded pattern. An example of the composition of the material 36 & 10 is disclosed in U.S. Patent Application Serial No. 10/463,396, filed on Jun. 6, 2003, entitled,,,,,,,,,,,,,,,,,, Incorporated here. Material 36a is shown in Figure 4 as being crosslinked at point 36b to form a crosslinked polymeric material 36c. Referring to Figures 2, 3 and 5, the pattern recorded on the embossed layer 34 is produced by mechanically contacting the mold 28. In order to achieve this, the distance "d" is shortened, the embossed droplets are mechanically contacted with the mold 28, the droplets % are expanded, and the embossed layer 34 is formed, with a continuous material 36a formed over the surface 32. In a specific example, the distance "d" is shortened so that the sub-portion 3 of the embossed layer 34 can enter the recess 28a as if it can enter the two portions 28a. (1) In order to assist in filling the recess 28a, the material 36a is provided with the desired properties to completely fill the recess 28a while covering the surface M with a continuous forming material. The specific shot, after the required distance "d" is usually the minimum distance rd", still retains the portion of the portion 34 of the wishing layer 34, and leaves the portion of the thick/child portion and the portion 3 of the thickness t2. Depending on the application, the thickness of 1292347 degrees can be any desired thickness. Typically, the ti is selected to be no more than twice the width u of the sub-portion 34a, i.e., t<2u, as more clearly shown in Figure 5. Referring to Figures 2, 3 and 4, after reaching a predetermined distance "d", the illuminating source 22 produces an actinic shot of 'photochemical light-radiopolymerized and cross-linked material shirts, forming a polymer material having six and five joints, and pressing The composition of the printing layer 34 is transferred from the material to the polymer material 36c after the transaction, and the material 36c is solid. The specially cross-linked poly-material 36c is cured to obtain the side portion 34e of the embossed layer 34, the shape of which is the shape of the surface 28c of the anamorphic mold 28, which is more clearly shown in Fig. 5. After the ride layer % is converted into a fine composition of the crosslinked polymer material (as shown in Fig. 4), the #H) print head 18 shown in Fig. 2 moves, the distance "d" increases, the mold 28 and the stamp The layers are separated from one another. Other processes can be used to complete the patterning of the substrate 30 with reference to Figure 5. For example, the substrate 30 and the embossed layer 34 can be transferred to the substrate 30' via the (iv) to provide a patterned surface 34c. To aid in the surname, the material from which the imprinting layer 34 is formed can be varied to define the relative etch rate relative to the substrate % as desired. Referring to Figures 2, 3 and 6, in order to make the mold have a very close characteristic structure, such as a nano-sized recess 28a, the droplets 36 are unfolded on the substrate of the overlapping mold 28 to fill the recess 28a. Time, and thus minus the production of the private printing. To aid in the production of the embossing process, 20 droplets 36 are dispensed to minimize the time required to deploy the droplets 36 to the substrate 30 and the droplets 36 to fill the recesses 28a. This item can be achieved by assigning droplets 36 in a two-dimensional matrix array 42 to minimize the spacing (shown as hearts and hearts) between adjacent droplets 36. As shown, the area of the droplets 36 of the matrix array 42 is in the range of six rows of nrn6 and six columns of mrm0. However, substantially the droplet % can be arranged in any two-dimensional arrangement on the substrate 11 1292347 30. It is desirable to maximize the number of droplets of the matrix array 42 for the specified total volume Vt of the imprinted material 36a required to form the predetermined patterned layer. This minimizes the spacing 81 and the heart between adjacent droplets. It is further desirable that each of the droplets 36 of the subset have substantially equal amounts of imprinted material combined with 5, defined as a unit volume of Vu. Based on these criteria, the total number of droplets 36 determined by the matrix array 42 can be determined as follows: (1) n = Vt / Vu where vt & vu is as defined above. Assume that the droplets 36 are square matrices, where the total number η of droplets 36 is defined as follows: ^ 10 15 20 (2) n=niX n2 where η! is the number of droplets along the first direction, and seven is in the second direction The number of drops. In the first direction, in other words, adjacent to the dimension of the dimension 36 = 3: measured as follows: 1 where q is the length of the zone 40 along the first direction. Similarly, the difference between adjacent droplets 36 in the second direction along the (4)th direction is as follows: (4) S2=L2/n2 where L2 is the length of the region 4〇 along the second direction. = The embossed material 36a associated with each droplet 36 is united according to the distribution of the garment, and the material is based on the resolution, that is, the droplet distribution device used to form the droplet 36 (in the figure - The operation batch of Muhe", and the staff does not) | And the distribution teaching device (not shown) has a minimum amount of pressure material 36a in each droplet 36, so the droplet distribution can be precisely controlled. The droplet 36 must advance through the embossed material of 90,000
竹扑a上方之該區4〇 12 1292347 積也最小化。如此縮短一壓印材料36a連續層填補凹部28a 及覆蓋基材所需時間。 本發明尋求避免之另一項問題為一旦形成圖案化表面 34c時’氣體被捕捉於壓印層34。特別於矩陣陣列42之彼此 5隔開之小滴36間的體積44，存在有氣體，矩陣陣列42之小 滴36展開於區40,因而防止（即使無法避免）氣體被捕捉於壓 印層。為了達成該項目的，根據本發明之一具體例，於矩 陣陣列42之小滴36之一子集係藉模具28沿第一方向壓縮， 隨後矩陣陣列42之其餘小滴36係沿橫過第一方向之第二方 10向壓縮。此項目的可經由模具28以懸臂樑式衝擊至小滴36 而達成，如第8圖所示。 參照第6、7及8圖’模板26設置成模具28表面28c相對 於基材30之基材表面3〇a形成斜角<9，稱作為懸臂樑衝擊。 可輔助形成角Θ之範例裝置揭示於美國專利申請案第 15 09/698,317號，申請日2000年1〇月27曰，名稱「壓印微影術 製程之高精度定向校正及間隙控制階段」，以引用方式併入 此處。由於模具28之懸臂樑衝擊結果，隨著模具28與基材 30間之距離的縮短，模具28子部分將接觸矩陣陣列仏之小 滴36子集，隨後模具28接觸模具28一緣之其餘部分接觸矩 20陣陣列42之其餘小滴36。如圖所示，模具28係實質上同時 接觸全部與行％相關小滴36。如此造成小滴36展開，產生 壓印材料36a之連續液體薄片46，該連續液體薄片係由區牝 邊緣40a朝向行之小滴延伸。液體薄片46之一緣界定液 _氣界面46a，界面46a之功能係將體積44之氣體由邊緣4〇a 13 1292347 推向邊緣40b、40c及40d。於行nrI15之小滴36間之體積糾定 義氣體通道，於該氣體通道，氣體可被推至區4〇周邊部分。 藉此方式’結合氣體通道之界面46a可減少（即使無法避免) 氣體被捕捉於液體薄片46。 5 參照第7圖及第9圖，當模板26朝向基材30移動時，模 具2 8旋轉’讓關聯行η*及行η5之隨後小滴3 6子集的壓印材料 36a展開，變成含括於連續液體薄片46。模板26持續旋轉， 模具28隨後接觸關聯行114及行ns之小滴36,故相關壓印材料 36a展開而變成含括於連續液體薄片46，如第1〇圖所示。該 1〇過程持續至全部小滴36皆含括於連續片46為止，如第^圖 所示。如圖可知，界面46a朝向邊緣4〇c移動，因此於區4〇 之其餘體積44a有氣體未受阻擋路徑（圖中未顯示）來行進通 過其中。如此允許體積44a之氣體由面對邊緣4〇c之區40送 出。藉此方式，如第5圖所示，捕捉於具有表面34c之壓印 15層34之氣體減少，即使無法避免，如第5圖所示。 芩照第3、12及13圖，於本發明之另一具體例，可無需 模具28之懸臂樑式衝擊，可達成矩陣陣列42之小滴36逐行 展開’如第7-11圖所示。此項目的可經由採用電磁力，移 動壓印材料36a跨區40及/或移動朝向模具128而達成。為了 20達成該項目的，模具128包括複數個實質上可定址之傳導元 件’顯示為qrq0，形成模具128之凹部128a之底端118a。由 子部分118a側出之本體150子部分118b係重疊凸部128b，且 不έ任何傳導材料。模具128之生成更完整討論如後。 參照第14圖，形成模板之方式包括獲得本體150,識別 1292347 形成模板之四區150a、150b、150c及150d。特別本體150係 由標準6025融合矽氧組成。於本體150之四個分開區同時形 成四個模板，顯示為模板126、226、326及426。為求本文 揭示簡明，將就模板126之製造討論，但需了解有關模板126 5之討論，也同等適用於模板226、326及426。 參照第15及16圖，本體150典型長度為152.4毫米。本 體150之完整一邊112存在有鉻層13〇。光阻層132覆蓋鉻層 130。光阻層132經過圖案製作以及顯影，來暴露出一區134 環繞側邊112中部136。中部136典型尺寸為邊長25毫米。典 10型地光阻層132係採用雷射寫入器製作圖案。於光阻層132 被顯影去除後，重疊區134之鉻層130係使用任何適當蝕刻 技術例如硝酸銨蝕刻或電漿蝕刻而被蝕刻去除。藉此方式 暴露出本體150重疊區134部分。隨後可進行適當後蝕刻處 理’例如烤箱烤乾或其它清潔製程。 15 假設蝕刻係由融合矽氧製成，適當蝕刻技術涉及經過 緩衝之氧化物蝕刻（BOE)。蝕刻進行足夠時間來讓平台133 具有預定高度h，平台133高度係由本體150之表面112測 ϊ，如第18圖所示。範例高度為15微米。隨後，去除光阻 層132其餘部分，去除中部136上鉻層130之任何其餘部分。 2〇光阻材料134層沉積於模板126上，如第19圖所示。光阻材 料134重疊平台133該區經使用標準技術製作圖案及顯影去 除’來暴露出本體150之區136，留下圖案化光阻層138，如 弟20圖所示。隨後銦錫氧化物（11[〇)層14〇沉積於模板 上復盖圖案化後之光阻層138，如第21圖所示。ιτο為用 15 1292347 於模具128之適當材料，由於ITO具導電性，且IT〇對輻射 源22產生之輕射波長貫質為透明，如第2圖所示。採用剝離 處理來去除圖案化後之光阻層138，如第2〇圖所示，而全部 非重疊區136之ΙΤΟ層部分則於剝離處理過程被去除。藉此 5方式，形成圖案化後之ΙΤ0層142,本體150之區144暴露出， 如第22圖所示。於形成圖案化ΙΤ〇層142之後，沉積氧化矽 _The area above the bamboo bash is 4〇 12 1292347 and the product is also minimized. This shortens the time required for a continuous layer of imprint material 36a to fill the recess 28a and cover the substrate. Another problem sought to be avoided by the present invention is that the gas is captured by the embossed layer 34 once the patterned surface 34c is formed. Particularly in the volume 44 between the droplets 36 spaced apart from each other by the matrix array 42, there is gas, and the droplets 36 of the matrix array 42 are spread out in the region 40, thereby preventing, if not avoidable, the gas being trapped in the embossed layer. In order to achieve this, in accordance with one embodiment of the present invention, a subset of the droplets 36 of the matrix array 42 are compressed in the first direction by the mold 28, and then the remaining droplets 36 of the matrix array 42 are traversed. The second side of one direction is compressed in 10 directions. This project can be achieved by cantilever beam impact to droplets 36 via mold 28, as shown in FIG. Referring to Figures 6, 7 and 8, the template 26 is arranged such that the surface 28c of the mold 28 forms an oblique angle <9 with respect to the substrate surface 3A of the substrate 30, referred to as a cantilever impact. An example device that can assist in the formation of corners is disclosed in U.S. Patent Application Serial No. 15 09/698,317, filed on January 27, 2000, entitled "High-Precision Directional Correction and Gap Control Phase of Imprinting Microfilm Processes", It is incorporated herein by reference. As a result of the cantilever beam impact of the mold 28, as the distance between the mold 28 and the substrate 30 is shortened, the sub-parts of the mold 28 will contact the subset of droplets 36 of the matrix array, and then the mold 28 contacts the remainder of the edge of the mold 28. The remaining droplets 36 of the matrix array 42 of contact moments are contacted. As shown, the mold 28 is in substantial contact with all of the line % associated droplets 36 at the same time. This causes the droplets 36 to unfold, creating a continuous liquid sheet 46 of embossed material 36a that extends from the edge of the region 40a toward the rows of droplets. One edge of the liquid sheet 46 defines a liquid-gas interface 46a that functions to push the gas of volume 44 from the edge 4〇a 13 1292347 toward the edges 40b, 40c and 40d. The volume of the droplets 36 of the row nrI15 corrects the gas channel, in which the gas can be pushed to the peripheral portion of the zone 4〇. In this way, the interface 46a in conjunction with the gas passage can reduce, if not avoid, the gas being trapped in the liquid sheet 46. 5 Referring to Figures 7 and 9, when the template 26 is moved toward the substrate 30, the mold 28 is rotated 'to cause the associated line η* and the subsequent embossed material 36a of the subsequent subset of rows η5 to be unfolded to become Included in a continuous liquid sheet 46. The stencil 26 continues to rotate, and the stencil 28 then contacts the associated row 114 and the droplets 36 of the row ns, so that the associated embossed material 36a expands to become included in the continuous liquid slab 46, as shown in FIG. The process continues until all of the droplets 36 are included in the continuous sheet 46, as shown in FIG. As can be seen, the interface 46a moves toward the edge 4〇c, so that the remaining volume 44a of the zone 4〇 has a gas unobstructed path (not shown) for traveling therethrough. The gas of volume 44a is thus allowed to be delivered by zone 40 facing edge 4c. By this means, as shown in Fig. 5, the gas trapped on the embossed 15 layer 34 having the surface 34c is reduced, even if it is unavoidable, as shown in Fig. 5. Referring to Figures 3, 12 and 13, in another embodiment of the present invention, the cantilever beam impact of the mold 28 can be achieved, and the droplets 36 of the matrix array 42 can be expanded line by line as shown in Figures 7-11. . This item can be achieved by using electromagnetic force to move the embossed material 36a across the zone 40 and/or toward the mold 128. In order to achieve this, the mold 128 includes a plurality of substantially addressable conductive elements ' shown as qrq0 forming the bottom end 118a of the recess 128a of the mold 128. The body 150 sub-portion 118b exiting from the sub-portion 118a overlaps the projection 128b and does not entrain any conductive material. The generation of the mold 128 is more fully discussed as follows. Referring to Figure 14, the manner in which the template is formed includes obtaining the body 150, identifying 1292347 forming the four regions 150a, 150b, 150c, and 150d of the template. The special body 150 is composed of standard 6025 fusion helium oxygen. Four templates are simultaneously formed in four separate areas of the body 150, shown as templates 126, 226, 326, and 426. For the sake of brevity in this disclosure, a discussion will be made regarding the fabrication of the template 126, but it will be appreciated that the discussion of the template 126 5 applies equally to the templates 226, 326, and 426. Referring to Figures 15 and 16, the body 150 is typically 152.4 mm in length. A chrome layer 13 is present on the complete side 112 of the body 150. The photoresist layer 132 covers the chrome layer 130. The photoresist layer 132 is patterned and developed to expose a region 134 that surrounds the central portion 136 of the side 112. The central portion 136 is typically 25 mm in side length. The pattern 10 photoresist layer 132 is patterned using a laser writer. After the photoresist layer 132 is removed by development, the chrome layer 130 of the overlap region 134 is etched away using any suitable etching technique such as ammonium nitrate etching or plasma etching. In this way, the portion of the overlap region 134 of the body 150 is exposed. A suitable post-etching treatment, such as oven baking or other cleaning processes, can then be performed. 15 Assuming that the etch is made of fused oxygen, a suitable etch technique involves buffered oxide etch (BOE). The etching is performed for a sufficient time to cause the platform 133 to have a predetermined height h, and the height of the platform 133 is measured by the surface 112 of the body 150, as shown in Fig. 18. The example height is 15 microns. Subsequently, the remainder of the photoresist layer 132 is removed, and any remaining portions of the chrome layer 130 on the middle portion 136 are removed. A layer of TiO material 134 is deposited on the template 126 as shown in FIG. Photoresist material 134 overlaps the land 133. This area is patterned and developed by standard techniques to expose regions 136 of body 150, leaving patterned photoresist layer 138, as shown in FIG. Subsequently, an indium tin oxide (11 [〇] layer 14 〇 is deposited on the template to cover the patterned photoresist layer 138 as shown in Fig. 21. Ipτο is a suitable material for the mold 128 using 15 1292347. Since the ITO is electrically conductive, and the IT 〇 is transparent to the light-emitting wavelength generated by the radiation source 22, as shown in Fig. 2 . A stripping process is used to remove the patterned photoresist layer 138, as shown in Figure 2, while the entire non-overlapping regions 136 are removed during the stripping process. By way of this, a patterned ΙΤ0 layer 142 is formed, and the region 144 of the body 150 is exposed, as shown in FIG. After forming the patterned germanium layer 142, depositing yttrium oxide _
Si〇2層146。如此形成模具128，氧化矽層146經製作圖案， 讓氧化矽非重疊於ITO層142之重疊區144之11[〇材料，如第 13圖所示。藉此方式讓凹部128a之底端係由IT〇生成，而凸 鲁 10 部128b係由氧化矽生成。 筝照第3、12及13圖，了解凸部i28b係由電絕緣材料製 成，因而貫現凹部128a附近之電磁場ΕΜι係大於凸部12牝 · 附近之電磁場EM2。為了達成該項目的，電源12〇係使用任 一種已知之適當耦合技術而與導電元件qi-q2作電連通，如 I5第I2圖所示。本例中，導電元件A%成形為延伸超錢具 128，電源120連結於模具128。此外經由選擇性定址導電元 件qrq6，選定之小滴36實質上可以任一種預定方式展開， · 包括前文就第7-11圖討論之展開樣式展開。 參照第3、24及25圖，如前文討論，小滴136及236實質 20上可排列成任一種矩陣陣列。如圖所示，小滴136及236排 列成二集合。各小滴136之壓印材料36a之量為實質相等， 各小滴236之塵印材料施之量為實質相等。於各小滴挪之 壓印材料量為實質大於於各小滴〗3 6之壓印材料3 6 a之量。 經由以此種方式配置小滴136及236與不等量壓印材料 16 1292347 36a ’相信填顯具28凹部ma所科間可最小化，同時避 免捕捉氣體於壓印層36a，而無需採用壓模128以懸臀擦式 衝4基材30 別經由提供最小體積之小滴I%，<達成前 文就縮短填補凹部12_需時間而討論之優點。如第24圖 5所示，小滴236含相對大量壓印材料施(如第3圖所系），及 其所在位置’增加小滴236所形成之壓印材料-氣體界面 146a之流動足財利，可轉氣體朝向區丨糊邊，不會捕 捉氣體於壓印材料36a。 參知、第3、12及24圖，為了進一步縮短展開壓印材料以 10及對小滴136及236之壓印材料36a製作圖案所需時間，玎採 用板板128，以及可循序激活傳導元件如(如前文討論）， 或同時激活傳導元件qrq6。 茶照第3、26及27圖，若希望同時施加電磁場跨模具， 可採用模板526。模板526係由適當材料本體550製成，例如 15由融合矽氧製成。範例材料為標準6025融合矽氧，於一邊 具有約152.4毫米測量值。於分開四區55〇a、55〇b、550c及 550d分別同時形成四個模板526、626、726及826。為求此 處揭示簡明，將就模板526之製造作討論，但須了解對模板 526之討論也同等適用於模板626、726及826。 20 參照第28圖及第29圖，本體550之全部側邊512存在有 鉻層530。平台533係以前文就第16-18圖討論之方式形成於 本體550。然後銦錫氧化物(no)層534使用標準技術沉積於 本體550整體側邊512上方，如第30圖所示。於ΠΌ層534上 方沉積氧化矽層Si02，其係採用標準技術製作圖案及蝕刻 17 1292347 來形成凹部528a及凸部528b，如第％圖所示。藉此方式， 凹部128a之底端係由ιτο製成，凸部lm係由Si〇2製成。了 解凸部528b係由電絕緣材料製成，因而實現凹部528&近處 之電磁場EM!係大於凸部528b附近之電磁場EM2。結果模具 5 528附近之壓印材料36a較可能被吸引入凹部528a，因而縮 紐讓壓印材料36a隨形於模具528所需時間。 前述本發明具體例僅供舉例說明之用。可對前文揭示 做多項變化及修改，仍然維持於本發明之範圍。例如使用 電磁場證實可確保壓印材料完整填補模具之結構特徵，因 10而避免壓印層的非連續。此種非連續係出現於當壓印材料 無法填補模具凹部時。可能原因係由於各種基於環境及材 料之參數，例如凸部與重疊凸部表面間之毛細吸引作用。 施加電磁場來吸引壓印材料至模具可克服此等性質。因此 本發明之範圍並非受前文說明所限，反而係由參照隨附之 15申請專利範圍連同其完整相當範圍決定。 L圖式簡明】 第1圖為根據本發明之微影術系統之透視圖； 第2圖為第1圖所不微影術系統之簡化仰視圖； 第3圖為第2圖所示壓印層組成材料於聚合與交聯前之 20 簡化代表圖； 第4圖為交聯後聚合物料於接受輕射照射而轉變為第3 圖所示材料之簡化代表圖； 第5圖為第1圖所示與壓印層隔開之模具，於壓印層製 作圖案後之簡化仰視圖； 18 1292347 第6圖為根據本發明之第—具體例，如上第2圖所干’ >儿積於基材上—區之壓印材料小轉狀俯視圖； 5 10 第7圖為根據本發明之一具體例，第㈣所示樓 臂襟式衝擊衝擊於第6圖所示小轉列之簡化示意圖、；心 第8-n圖為俯視圖，顯示如上第6圖所示小滴採用 圖所示模具之懸臂樑式衝擊壓縮； 第12圖為根據本發明之另_具體例，具有 之電導體之模具之底視圖； 疋Si〇2 layer 146. The mold 128 is thus formed, and the ruthenium oxide layer 146 is patterned such that the ruthenium oxide is not overlapped with the 11 [〇 material of the overlap region 144 of the ITO layer 142, as shown in Fig. 13. In this way, the bottom end of the recess 128a is generated by IT〇, and the convex portion 10b is formed of yttrium oxide. According to Figures 3, 12 and 13, it is understood that the convex portion i28b is made of an electrically insulating material, so that the electromagnetic field near the concave portion 128a is larger than the electromagnetic field EM2 in the vicinity of the convex portion 12?. To achieve this, the power supply 12 is in electrical communication with the conductive element qi-q2 using any of the known suitable coupling techniques, as shown in Figure I5. In this example, the conductive element A% is shaped to extend the excess money 128 and the power source 120 is coupled to the mold 128. In addition, via the selectively addressed conductive element qrq6, the selected droplets 36 can be deployed in substantially any predetermined manner, including the expanded pattern discussed above with respect to Figures 7-11. Referring to Figures 3, 24 and 25, as discussed above, droplets 136 and 236 can be arranged in substantially any matrix array. As shown, droplets 136 and 236 are arranged in two sets. The amount of imprint material 36a of each droplet 136 is substantially equal, and the amount of dust printed material of each droplet 236 is substantially equal. The amount of imprinting material applied to each droplet is substantially greater than the amount of imprinting material 3 6 a of each droplet. By configuring the droplets 136 and 236 in this manner with the unequal amount of imprint material 16 1292347 36a ' it is believed that the recess 28 can be minimized while avoiding trapping gas on the imprint layer 36a without the need for pressure The die 128 is flushed with the base material 30 by a dangling wipe, and the advantage of the time required to shorten the filling of the recess 12_ is achieved by providing a droplet I% of the smallest volume. As shown in Fig. 24, Fig. 5, the droplet 236 contains a relatively large amount of embossing material (as shown in Fig. 3), and its position 'increasing the embossing material formed by the droplet 236-the gas interface 146a flows well. Advantageously, the deflectable gas is smeared toward the zone and does not capture gas to the embossed material 36a. Referring to Figures 3, 12 and 24, in order to further shorten the time required to develop the embossed material 10 and the embossed material 36a of the droplets 136 and 236, the slab 128 is used, and the conductive element can be activated sequentially. As (as discussed above), or simultaneously activate the conduction element qrq6. In the photo of Figures 3, 26 and 27, if it is desired to simultaneously apply an electromagnetic field across the mold, a template 526 can be used. The template 526 is made of a suitable material body 550, such as 15 made of fused oxygen. An example material is standard 6025 fusion helium with a measured value of about 152.4 mm on one side. Four templates 526, 626, 726, and 826 are simultaneously formed in separate four zones 55〇a, 55〇b, 550c, and 550d, respectively. For the sake of clarity, the fabrication of the template 526 will be discussed, but it should be understood that the discussion of the template 526 is equally applicable to the templates 626, 726, and 826. 20 Referring to Figures 28 and 29, a chrome layer 530 is present on all sides 512 of the body 550. Platform 533 is formed on body 550 in the manner previously discussed with respect to Figures 16-18. Indium tin oxide (NO) layer 534 is then deposited over the entire side 512 of body 550 using standard techniques, as shown in FIG. A yttria layer SiO 2 is deposited over the ruthenium layer 534 by patterning and etching 17 1292347 using standard techniques to form recesses 528a and protrusions 528b, as shown in the % diagram. In this way, the bottom end of the recess 128a is made of ιτο, and the convex part lm is made of Si〇2. The embossing convex portion 528b is made of an electrically insulating material, so that the electromagnetic field EM! in the vicinity of the concave portion 528& is larger than the electromagnetic field EM2 in the vicinity of the convex portion 528b. As a result, the imprint material 36a near the mold 5 528 is more likely to be attracted into the recess 528a, thereby shrinking the time required for the imprint material 36a to follow the mold 528. The foregoing specific examples of the invention are for illustrative purposes only. Many variations and modifications may be made to the foregoing disclosure and remain within the scope of the invention. For example, the use of an electromagnetic field confirms that the embossed material completely fills the structural features of the mold, thereby avoiding discontinuities in the embossed layer. This discontinuous system occurs when the embossed material cannot fill the mold recess. Possible causes are due to various environmental and material-based parameters, such as capillary attraction between the convex and overlapping convex surfaces. Applying an electromagnetic field to attract the imprint material to the mold overcomes these properties. Therefore, the scope of the invention is not to be limited by the foregoing description, but rather, BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of a lithography system according to the present invention; Fig. 2 is a simplified bottom view of the lithography system of Fig. 1; and Fig. 3 is a embossing shown in Fig. 2. A simplified representation of the layer constituent material before polymerization and cross-linking; Figure 4 is a simplified representation of the transition of the polymer material to a material shown in Figure 3 after exposure to light radiation; Figure 5 is a first diagram A simplified bottom view of the mold separated from the embossed layer after patterning the embossed layer; 18 1292347 Fig. 6 is a view of the first embodiment of the present invention, as shown in Fig. 2, A top view of the embossed material on the substrate--area; 5 10 Figure 7 is a simplified schematic view of the small arm-shaped impact impact shown in Figure 4 according to a specific example of the present invention Figure 8 - n is a top view, showing the cantilever beam impact compression of the droplet shown in Figure 6 using the mold shown in Figure 6; Figure 12 is another electrical example according to the present invention, having the electrical conductor Bottom view of the mold; 疋
第13圖為第12圖所示模板之側視剖面圖； 第14圖為根據本發明之又另—具體例，採用來製造模 板之基材之俯視圖； ' 第15圖為第14圖所示基材該區沿線i5 _ i5所取之側視 剖面圖； 第16-23圖為第15圖所示該區之側視剖面圖，顯示用來 15製造第13圖所示模板之各項處理過程；Figure 13 is a side cross-sectional view of the template shown in Figure 12; Figure 14 is a plan view of a substrate used to fabricate a template according to still another specific example of the present invention; 'Figure 15 is shown in Figure 14 A side cross-sectional view of the substrate taken along line i5 _ i5; Figures 16-23 are side cross-sectional views of the area shown in Fig. 15, showing the various treatments used to fabricate the template shown in Fig. 13. process;
第24圖為根據本發明之第四具體例，第6圖所示該區之 俯視圖，帶有壓印材料小滴沉積於一陣列； 第25圖為根據本發明之第五具體例，採用第^圖所禾模 具壓縮如上於第24圖所示小滴之俯視圖； 20 第26圖為根據本發明之第六具體例，模板之剖面圖； 第27圖為根據本發明之第七具體例，採用來製造第26 圖所示模板之基材之俯視圖； 第28圖為第27圖所示基材一區沿線28-28所取之别面 圖；以及 19 1292347 第29-30圖為第28圖所示該區之剖面圖，顯示用來製造 第26圖所示模板之各項處理過程。 【主要元件符號說明】 10...微影術系統 36a···遥印材料 12...橋式支持體 36b...點 14...橋接器 36c...交聯後之聚合物料 16...平台支持體 40…區 18...壓印頭 40a-d...邊緣 20...移動平台 42...矩陣陣列 22...輻射源 44.··體積 23...發電機 44a...其餘體積 25...處理器 46a...液-氣界面 26…模板 112...整個側邊 28…模具 118a-b…子部分 28a···凹部 120...電源 28b...凸部 126、226、326、426…模板 28c…表面 128...模具 30...基材 128a···凹部 30a...基材表面 128b···凸部 32…表面 130…鉻層 34...壓印層 132...光阻層 34a-b...子部分 133...平台 34c...側邊，圖案化表面 134…區 36…小滴 136...中部 20 1292347 136、236…小滴 512...整個側邊 138...圖案化光阻層 528a··.凹部 140…ITO層 528b.··凸部 142...圖案化ITO層 530...鉻層 144…區 533...平台 146.··氧化石夕層 534…ITO層 146a··.壓印材料-氣體界面 550...本體 150...本體 550a-d…區 150a-d...區 526、626、726、826···模板Figure 24 is a plan view of the region shown in Figure 6 in accordance with a fourth embodiment of the present invention, with droplets of imprinted material deposited in an array; Figure 25 is a fifth embodiment of the present invention, The figure is a top view of the droplet as shown in Fig. 24; 20 Fig. 26 is a cross-sectional view of the template according to a sixth specific example of the present invention; and Fig. 27 is a seventh specific example according to the present invention, A top view of the substrate used to fabricate the template shown in Figure 26; Figure 28 is a side view of the substrate shown in Figure 27 taken along line 28-28; and 19 1292347 Figures 29-30 are the 28th The cross-sectional view of the area shown in the figure shows the various processes used to fabricate the template shown in Fig. 26. [Main component symbol description] 10... lithography system 36a···telephoto material 12...bridge support 36b...point 14...bridge 36c...crosslinked polymer material 16...platform support 40...zone 18...imprint head 40a-d...edge 20...moving platform 42...matrix array 22...radiation source 44.· volume 23.. Generator 44a...remaining volume 25...processor 46a...liquid-gas interface 26...template 112...entire side 28...mold 118a-b...sub-portion 28a···recess 120.. Power supply 28b...protrusion 126, 226, 326, 426... template 28c... surface 128... mold 30... substrate 128a... recess 30a... substrate surface 128b··· convex portion 32 ...surface 130...chromium layer 34...imprint layer 132...photoresist layer 34a-b...subsection 133...platform 34c...side, patterned surface 134...region 36...droplet 136...center 20 1292347 136,236...droplet 512...whole side 138...patterned photoresist layer 528a·.recess 140...ITO layer 528b.· convex portion 142...patterned ITO layer 530...chromium layer 144...region 533...platform 146.·· oxidized stone layer 534...ITO layer 146a·..imprint material-gas interface 5 50...body 150...body 550a-d...zone 150a-d...zone 526,626,726,826···template