KR102171697B1 - LED electrode assembly and manufacturing method thereof - Google Patents

Abstract

The present invention relates to an LED electrode assembly, and more particularly, to an LED electrode assembly capable of preventing damage and short circuits of electrodes that may occur during alignment of LED devices, and a method of manufacturing the same.

Description

LED electrode assembly and manufacturing method thereof TECHNICAL FIELD

The present invention relates to an LED electrode assembly capable of preventing damage to an electrode or an electrical short circuit, and a method of manufacturing the same.

In order to realize electronic devices using LEDs such as LED displays, a bottom-up method based on nanotechnology is being studied. However, in the case of three-dimensional bonding by stacking an electrode, an LED element, and another electrode in a bottom-up manner in the electrode wiring of an LED element, the LED element must be erected in three dimensions between two different electrodes and bonded to the electrode. It may be possible if the size of the LED device is possible, but in the case of the LED device of the nano-unit size, it is difficult to combine it by standing upright on the electrode in three dimensions, and some may exist in a lying form, which may cause mounting failure.

In addition, even if the LED element can be erected on the electrode in three dimensions, there is a problem in that it is difficult to couple the LED elements to different electrodes one-to-one, and even if the LED element is coupled one-to-one, it is more difficult to electrically connect without short circuit. Such an electrical short occurs when the active layer of the LED device and the electrode come into contact with each other, and does not emit light even when power is applied, resulting in poor light emission.

In order to solve the short-circuit problem that occurs when the active layer of the LED device touches the electrode as above, a technology for coating an insulating film using the atomic layer deposition (ALD) method on the rest of the LED device except both ends It was disclosed in Patent Document 1, and through this technology, it was possible to minimize the light emission defect of the electronic device. However, when the active layer of the LED element is coated with an insulating film, there is a problem in that light emission efficiency decreases as light that cannot escape the LED element due to the insulating film is generated. Using an insulating film made of a transparent material can minimize the decrease in luminous efficiency, but it cannot be completely resolved through this.

Meanwhile, the LED elements may be self-aligned between two different electrodes by induction of an electric field formed by a potential difference between the two electrodes, and the larger the potential difference between the two electrodes, the more LED elements may be aligned. However, when aligning the LED elements, it is difficult to align the LED elements at high voltages as current flows between the two electrodes through a solvent and conductive impurities located between the two electrodes with a potential difference. There is this.

Patent Registration Publication No. 10-1429095 Patent Registration Publication No. 10-1672781

The present invention has been conceived in consideration of the above points, and an object of the present invention is to provide an LED electrode assembly and a method of manufacturing the same, which prevents damage to electrodes and electrical shorts that may occur during alignment of LED elements, and expresses more improved luminance. .

In addition, the present invention has another object to provide a backlight unit including the LED electrode assembly according to the present invention.

In addition, the present invention has another object to provide a lamp including the LED electrode assembly according to the present invention.

In order to solve the above problems, the present invention extends in a first direction and is spaced apart in a second direction different from the first direction, a first electrode and a second electrode, an insulating film formed on the first electrode and the second electrode, At least one LED element in which one end is positioned above the first electrode and the other end is positioned above the second electrode, and at least a portion of a third electrode and the other end in contact with at least a portion of one end of each of the LED elements And a fourth electrode in contact with, wherein the third electrode and the fourth electrode do not contact the LED element, but are in contact with the insulating film, and are in the first portion and the first portion extending in the first direction. And a second portion connected to and in contact with at least a portion of both ends and an outer surface of the LED element, wherein a portion of the LED element is in contact with the insulating film and a portion of the LED electrode assembly not in contact with the insulating film. to provide.

According to an embodiment of the present invention, the insulating layer may have a thickness of 1 nm to 100 μm.

In addition, according to an embodiment of the present invention, the aspect ratio (Aspect ratio) of the LED device may be 1.2 to 100.

In addition, according to an embodiment of the present invention, the LED device may have a length of 100 nm to 10 μm.

In addition, in order to solve the above-described problem, the present invention extends in a first direction and is spaced apart in a second direction different from the first direction, and on the first electrode and the second electrode. Forming an insulating film on the first electrode and the second electrode on which the insulating film is formed, and supplying a solution containing at least one LED element to the first electrode and the second electrode to apply power to the LED Aligning the device so that one end is positioned above the first electrode and the other end is positioned above the second electrode, and a third electrode in contact with at least a portion of one end of each of the LED elements and at least a portion of the other end thereof. Forming a fourth electrode; Including, wherein the third electrode and the fourth electrode are in contact with the insulating film without contacting the LED element, the first portion extending in the first direction and the first An LED electrode connected to a portion and comprising a second portion in contact with at least a portion of both ends and an outer surface of the LED element, wherein a portion of the LED element is in contact with the insulating layer and a portion of the LED element does not contact the insulating layer Provides an assembly manufacturing method.

According to an embodiment of the present invention, the power applied in the step of aligning the LED elements may have a voltage of 0.1 to 2000 V.

In addition, according to an embodiment of the present invention, the frequency of the power source may be 10 Hz to 100 GHz.

On the other hand, the present invention provides a backlight unit including the LED electrode assembly according to the present invention.

In addition, the present invention provides a lamp comprising the LED electrode assembly according to the present invention.

In addition, the present invention provides a full-color LED display comprising the LED electrode assembly according to the present invention.

In addition, the present invention LED electrode assembly according to the present invention; It provides a color-by-blue (Color-by-blue) LED display including; and a color conversion layer.

According to the present invention, it is possible to implement an LED electrode assembly having excellent luminance by preventing damage to an electrode and an electrical short that may occur during alignment of LED devices. In addition, the LED electrode assembly according to the present invention can be widely applied to the entire industry, including electronic devices such as various lighting and displays.

1 is a view of the LED electrode assembly according to an embodiment of the present invention, FIG. 1(a) is a perspective view of the LED electrode assembly, and FIG. 1(b) is a vertical line along the boundary line XX′ of FIG. 1(a). It is a cross-sectional view.
2 is a perspective view of an LED device included in an embodiment of the present invention.
3 is a schematic diagram of a process before forming a driving electrode during a manufacturing process of an LED electrode assembly according to an embodiment of the present invention.
4 is a schematic diagram of a process of forming a driving electrode during a manufacturing process of an LED electrode assembly according to an embodiment of the present invention.
5 is a schematic diagram of a process according to another method of forming a driving electrode during a manufacturing process of an LED electrode assembly according to an embodiment of the present invention.
6 is an optical microscope photograph of the LED electrode assembly according to Example 1.
7 is an optical microscope photograph of the LED electrode assembly according to Example 2.
8 is an optical microscope photograph of the LED electrode assembly according to Example 3.
9 is an optical microscope photograph of the LED electrode assembly according to Comparative Example 1.
10 is an optical microscope photograph of the LED electrode assembly according to Comparative Example 2.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those of ordinary skill in the art can easily implement the present invention. The present invention may be implemented in various different forms, and is not limited to the embodiments described herein.

When the LED elements are aligned, a potential difference is formed by a solvent or conductive impurity located between the mounting electrodes, and an electric short or damage to the electrode may occur as a current flows between the two mounting electrodes.

In order to solve the above-described problem, the present invention forms an insulating film on the exposed outer surfaces of the first mounting electrode (or the first electrode) and the second mounting electrode (or the second electrode) to align the LED devices. Electrical short circuit and damage of the electrode by the solvent or conductive impurities generated can be prevented in advance. However, since the first mounting electrode and the second mounting electrode on which the insulating film is formed cannot directly contact the LED device, the first driving electrode (or the third electrode) and the second driving electrode (or, The LED electrode assembly capable of driving can be manufactured by forming the fourth electrode).

Hereinafter, an LED electrode assembly according to an embodiment of the present invention will be described.

Referring to FIG. 1(a), the LED electrode assembly 100 according to an embodiment of the present invention extends in a first direction and is spaced apart from the first direction in a second direction ( 121, or the first electrode) and the second mounting electrode 122 or the second electrode, the insulating film 130 formed on the first mounting electrode 121 and the second mounting electrode 122, the first mounting electrode (121) At least one LED element 140, which has one end positioned on the top and arranged so that the other end is positioned above the second mounting electrode 122, and at least a portion of one end of each of the LED elements 140 It may include a first driving electrode 151 (or a third electrode) and a second driving electrode 152 (or a fourth electrode) in contact with at least a portion of the other end.

First, the first mounting electrode 121 and the second mounting electrode 122 may be formed on the substrate 110.

As the substrate 110, preferably, any one of a glass substrate, a crystal substrate, a sapphire substrate, a plastic substrate, and a bendable flexible polymer film may be used. Even more preferably, the substrate may be transparent. However, it is not limited to the above type, and a substrate on which a conventional electrode can be formed may be used without limitation.

The area of the substrate 110 is not limited, and the area of the first mounting electrode 121 to be formed on the substrate 110, the area of the second mounting electrode 122, the first mounting electrode 121 and the first mounting electrode 121 It may be changed in consideration of the size of the LED elements 140 communicated with the two mounting electrodes 122 and the number of the LED elements 140 communicated with each other.

In addition, the thickness of the substrate may be 100 μm to 1 mm, but is not limited thereto.

The first mounting electrode 121 is selected from any one or more metal materials selected from the group consisting of aluminum, titanium, indium, gold, and silver, or from the group consisting of Indium Tin Oxide (ITO), ZnO:Al, and CNT-conductive polymer composites. It may be any one or more transparent materials. When two or more types of electrode formation materials are used, the first mounting electrode 121 may have a structure in which two or more types of materials are stacked. Even more preferably, the first mounting electrode 121 may be an electrode in which two kinds of materials are stacked with titanium/gold. However, the first mounting electrode 121 is not limited to the above description.

In addition, the first mounting electrode 121 may have a width of 100 nm to 50 μm and a thickness of 0.1 to 10 μm.

The second mounting electrode 122 is one or more metal materials selected from the group consisting of aluminum, titanium, indium, gold, and silver, or selected from the group consisting of Indium Tin Oxide (ITO), ZnO:Al, and CNT-conductive polymer composites. Any one or more transparent materials may be used. Preferably, the second mounting electrode 122 may have a structure in which two or more materials are stacked. Even more preferably, the second mounting electrode 122 may be an electrode in which two kinds of materials are stacked with titanium/gold. However, the second mounting electrode 122 is not limited to the above description.

In addition, the second mounting electrode 122 may have a width of 100 nm to 50 μm and a thickness of 0.1 to 10 μm.

In addition, materials forming the first mounting electrode and the second mounting electrode may be the same or different.

Next, the insulating layer 130 may be formed on the exposed outer surfaces of the first mounting electrode 121 and the second mounting electrode 122.

In addition, the insulating layer 130 may prevent in advance an electrical short that occurs when the active layer of the LED device contacts the mounting electrode when the LED devices are aligned.

The thickness of the insulating layer 130 may vary depending on the voltage of the power applied to the first mounting electrode 121 and the second mounting electrode 122, the length of the LED element, the distance between mounting electrodes, etc., but preferably the insulating layer Silver may have a thickness of 1 nm to 100 μm.

If the thickness of the insulating film is less than 1 nm, there is a risk of an electrical short occurring when the active layer of the LED element contacts the mounting electrode when aligning the LED element. If it exceeds 100 μm, it is applied to align the LED element. It may be difficult to achieve the object of the present invention, such as an excessive increase in voltage or an unaligned LED element.

More preferably, the insulating layer may have a thickness of 1 nm to 10 μm, most preferably 1 nm to 5 μm. When the thickness range is satisfied, damage to the electrode or electrical short can be prevented even at a relatively low alignment voltage, and the luminance of the LED electrode assembly can be further improved by minimizing extinction by the insulating film.

In addition, the insulating layer 130 may include any one or more selected from the group consisting of SiO ₂ , Si ₃ N ₄ , SiN _x , Al ₂ O ₃ , HfO ₂ , Y ₂ O ₃ and TiO ₂ , and more It may be preferably silicon nitride (SiN _x ). However, it is not limited to the above descriptions.

Next, the LED elements 140 may be aligned so that both ends are positioned above the first mounting electrode 121 and the second mounting electrode 122 on which the insulating layer 130 is formed.

The LED device 140 may be employed without limitation if it is a known LED device that can be applied to lighting, displays, and the like. When the LED device 140 is described with reference to FIGS. 2(a) and 2(b), the LED device 140 includes a first conductivity type semiconductor layer 141 and the first conductivity type semiconductor layer ( An active layer 143 formed on 141) and a second conductivity type semiconductor layer 142 formed on the active layer may be included.

Any one of the first conductivity-type semiconductor layer 141 and the second conductivity-type semiconductor layer 142 includes at least one n-type semiconductor layer, and the other conductivity-type semiconductor layer includes at least a p-type semiconductor layer. It can contain one.

x≤1, 0 ≤y≤1, 0≤x+y≤1)의 조성식을 갖는 반도체 재료 예컨대, InAlGaN, GaN, AlGaN, InGaN, AlN, InN등에서 어느 하나 이상이 선택될 수 있으며, 제1 도전형 도펀트가 도핑될 수 있다. 상기 제1 도전형 도펀트는 Si, Ge, Sn일 수 있으나, 이에 제한되지 않는다.When the first conductivity-type semiconductor layer 141 includes an n-type semiconductor layer, the n-type semiconductor layer is In _x Al _y Ga _1-xy N (0

A semiconductor material having a composition formula of x≤1, 0≤y≤1, 0≤x+y≤1), for example, any one or more of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, etc. can be selected, and the first conductivity Type dopant may be doped. The first conductivity type dopant may be Si, Ge, or Sn, but is not limited thereto.

In addition, the thickness of the first conductivity type semiconductor layer may be 1.5 to 5 μm, but is not limited thereto.

x≤1, 0 ≤y≤1, 0≤x+y≤1)의 조성식을 갖는 반도체 물질 예컨대, InAlGaN, GaN, AlGaN, InGaN, AlN, InN등에서 어느 하나이상이 선택될 수 있으며, 제2 도전형 도펀트가 도핑될 수 있다. 상기 제2 도전형 도펀트는 Mg일 수 있으나, 이에 제한되지 않는다.When the second conductivity-type semiconductor layer 142 includes a p-type semiconductor layer, the p-type semiconductor layer is In _x Al _y Ga _1-xy N (0

A semiconductor material having a composition formula of x≤1, 0 ≤y≤1, 0≤x+y≤1), such as InAlGaN, GaN, AlGaN, InGaN, AlN, InN, etc., any one or more may be selected, and the second conductivity Type dopant may be doped. The second conductivity type dopant may be Mg, but is not limited thereto.

Further, the thickness of the second conductivity type semiconductor layer may be 0.08 to 0.25 μm, but is not limited thereto.

The active layer 143 is formed above the first conductivity type semiconductor layer 141 and below the second conductivity type semiconductor layer 142, and may be formed in a single or multiple quantum well structure. The active layer 143 may be used without limitation if it is an active layer included in a conventional LED device used for lighting, displays, and the like. When an electric field is applied to the active layer, light is generated by the combination of electron-hole pairs.

In addition, the thickness of the active layer 143 may be 0.05 to 0.25 μm, but is not limited thereto.

In addition, as shown in Figure 2b, the LED device 140 may further include a conductive electrode layer 144 formed on at least one end side of the LED device, the conductive electrode layer is a curved surface on the outer surface, for example It may be a metal cap containing.

The metal cap may increase the surface area of a region in which the LED device can be polarized under an electric field, so that more positive or negative charges may be charged on the surface of the metal cap, thereby improving alignment of the LED device.

The material, shape, and specific manufacturing method of the metal cap may be incorporated by reference in Patent Document 2 by the inventor of the present invention, so the detailed description thereof will be omitted.

The aspect ratio of the LED element 140 may be 1.2 to 100, preferably 1.2 to 50, more preferably 1.5 to 20, and even more preferably 1.5 to 10.

If the aspect ratio of the LED element 140 is less than 1.2, there is a concern that the LED element 140 may not be aligned even when power is applied to the mounting electrodes 121 and 122, and if it exceeds 100, it is necessary for the alignment of the LED element 140. Although the voltage of the power source may be lowered, it may be difficult to manufacture the LED element 140 itself.

Next, referring to FIG. 1(b), the first driving electrode 151 and the second driving electrode 152 will be described. The first driving electrode 151 and the second driving electrode 152 are LED It does not contact the device 140, but is in contact with the insulating film 130, is connected to the first portions 151a and 152a extending in the first direction and the first portions 151a and 152a, Includes second portions 151b and 152b in contact with at least a portion of both ends and outer surfaces, and the LED element 140 has a portion of the outer surface in contact with the insulating layer 130 and the other portion does not contact with the insulating layer 130. May not.

A portion of the LED element 140 that comes into contact with the first driving electrode 151 and the second driving electrode 152, respectively, is a first conductive type semiconductor layer 141 and a second conductive type semiconductor layer 142 or a conductive electrode layer It may be (144).

Next, a method of manufacturing an LED electrode assembly according to the present invention will be described.

The manufacturing method of the LED electrode assembly according to an embodiment of the present invention includes (1) forming an insulating film on the exposed outer surface of the mounting electrode including the first mounting electrode and the second mounting electrode formed to be spaced apart on the same plane. step; (2) A solution containing LED elements is added to the first and second mounting electrodes on which the insulating film is formed, and one end of the LED elements is located above the first mounting electrode and the other end is above the second mounting electrode. Applying power to the first mounting electrode and the second mounting electrode so as to be aligned to be positioned therein; And (3) forming a driving electrode including a first driving electrode in contact with at least a portion of one end of each of the aligned LED elements and a second driving electrode in contact with at least a portion of the other end.

Alternatively, the manufacturing method of the LED electrode assembly according to an embodiment includes a first electrode and a second electrode extending in a first direction and spaced apart in a second direction different from the first direction, and the first electrode and the second electrode. Forming an insulating film on an electrode, injecting a solution containing at least one LED element on the first electrode and the second electrode on which the insulating film is formed, and applying power to the first electrode and the second electrode Aligning the LED element with one end positioned above the first electrode and the other end positioned above the second electrode, and at least a portion of a third electrode and the other end in contact with at least a portion of one end of each of the LED elements Forming a fourth electrode in contact, wherein the third electrode and the fourth electrode include: a first portion not in contact with the LED element but in contact with the insulating film, and extending in the first direction; And a second portion connected to the first portion and in contact with at least a portion of both ends and an outer surface of the LED element, wherein a portion of the LED element contacts the insulating layer and a portion of the LED element contacts the insulating layer. I can't.

Prior to performing step (1) of the present invention, a step of forming the first mounting electrode and the second mounting electrode on the substrate may be performed.

The first mounting electrode and the second mounting electrode may be formed on the substrate by a known method capable of forming an electrode material on the substrate such as a thermal evaporation method, an e-beam evaporation method, a sputtering deposition method, and a screen printing method. . A specific method for this may be incorporated by reference in Patent Document 1 by the inventor of the present invention, and thus the detailed description thereof will be omitted.

Next, referring to Figure 3 (a), step (1) of the manufacturing method of the LED electrode assembly according to an embodiment of the present invention is the first mounting electrode 221 and the same plane as the first mounting electrode 221 It may be performed by forming an insulating film 230 on the exposed outer surface of the second mounting electrode 222 formed to be spaced apart therefrom.

In addition, the method of forming the insulating film 230 may be any one of plasma chemical vapor deposition (PECVD), e-beam deposition, atomic layer deposition, sputtering deposition, and preferably plasma chemical vapor deposition (PECVD). However, it is not limited thereto.

Next, referring to FIG. 3(b), step (2) of the method of manufacturing an LED electrode assembly according to an embodiment of the present invention includes a first mounting electrode 221 and a second mounting electrode on which the insulating layer 230 is formed. A solution 270 containing the LED elements 240 is put on the 222, and power to the first mounting electrode 221 and the second mounting electrode 222 to align the LED elements 240 It can be performed by applying.

In addition, the solution 270 containing the LED elements may be prepared by mixing a plurality of LED elements 240 with a dispersion solvent. The dispersion solvent may be ink or paste. Preferably, the dispersion solvent may be at least one selected from the group consisting of acetone, water, alcohol, and toluene, and more preferably acetone. However, the type of the dispersion solvent is not limited to the above description, and a solvent capable of evaporating well without physical or chemical effect on the LED device may be used without limitation.

In addition, the LED devices 240 may be included in an amount of 0.001 to 100 parts by weight based on 100 parts by weight of the dispersion solvent. If it is included in an amount of less than 0.001 parts by weight, it may be difficult to exert the normal function of the LED electrode assembly because the number of LED elements communicated to the electrode is small, and there may be a problem in that a solution containing LED must be added several times to overcome this. When the weight portion is exceeded, there may be a problem of obstructing the alignment between the plurality of LED elements 240.

Further, the voltage of the power applied to the first mounting electrode 221 and the second mounting electrode 222 may be 0.1 to 2000 V. If the voltage is less than 0.1 V, the alignment of the LED element may be deteriorated, and if the voltage exceeds 2000 V, a leakage current such as destruction of the insulating film may occur, leading to an electrical short circuit or damage to the electrode.

Further, the voltage of the power applied to the first mounting electrode 221 and the second mounting electrode 222 may vary depending on the length of the LED element, the distance between mounting electrodes, and the thickness of the insulating layer.

In addition, the frequency of the power source may be 50 kHz to 1 GHz, preferably an AC power source having a sine wave waveform of 90 kHz to 100 MHz.

3(c) is a schematic diagram showing a state in which the LED elements 240 are aligned by applying power to the first mounting electrode 221 and the second mounting electrode 222. As such, the LED devices 240 may be arranged so that one end is positioned above the first mounting electrode 221 and the other end is positioned above the second mounting electrode 222, and the first mounting electrode and the second mounting electrode 222 Electrical short circuits and damage to the electrode due to solvent or conductive impurities may be prevented in advance through the insulating layer 230 formed on the electrode.

Next, step (3) of the method for manufacturing an LED electrode assembly according to an embodiment of the present invention includes both ends of each of the LED elements arranged so that both ends are respectively positioned above the first mounting electrode and the second mounting electrode. It may be performed by forming a first driving electrode and a second driving electrode respectively in contact with at least a portion.

The first mounting electrode and the second mounting electrode covered with the insulating film may be aligned with the LED device by applying power, but the LED device cannot be driven because it cannot electrically contact the LED device. Accordingly, it is possible to drive the LED device by forming a first driving electrode and a second driving electrode in electrical contact with the LED device.

The first driving electrode and the second driving electrode may be manufactured through a lift-off process or an etching process.

4 is a schematic diagram showing a manufacturing process of a driving electrode using a lift-off process in step (3) of the manufacturing method of the LED electrode assembly according to an embodiment of the present invention.

4(a) shows a first mounting electrode 321 and a second mounting electrode 322 formed on the substrate 310, and a first mounting electrode 321 and a second mounting electrode formed on the substrate 310 ( LED comprising an insulating film 330 formed on 322), an LED element 340 arranged so that both ends are positioned above the first mounting electrode 321 on which the insulating film 330 is formed and on the second mounting electrode 322 The electrode assembly 300 is shown.

Next, a photoresist layer 360 may be formed on the LED electrode assembly 300 as shown in FIG. 4B. A method of forming the photoresist layer 360 may be any one of spin coating, spray coating, and screen printing, and preferably spin coating, but is not limited thereto.

The photoresist layer 360 may be any one selected from a positive photoresist and a negative photoresist, but preferably, a negative photoresist is more advantageous in simplifying the process.

Photoresist refers to a resin that causes chemical changes when irradiated with light, and can be classified into a positive photoresist and a negative photoresist. Positive photoresist refers to a photosensitive resin in which a polymer is solubilized only in the light-touched area and the resist disappears, and a negative photoresist refers to a photosensitive resin in which the resist remains due to insolubilization of the polymer only in the light-touched area.

As an example, when using a negative photoresist will be described in detail, the first mounting electrode 321 on the photoresist layer 360 after curing the photoresist layer 360 as shown in FIG. 4C. ) And the space of the second mounting electrode 322 may be formed, and the exposed area of the photoresist layer 360 may be insolubilized by irradiating UV.

에서 1 내지 2 분 동안 열처리할 수 있다. 만일 상기 UV 조사 시간이 3초 미만일 경우, 상기 노광된 영역이 모두 불용성이 되지 않는 문제가 발생할 수 있고, 30초를 초과할 경우, 광 레지스트 층(360)의 노광 영역이 제 1 실장전극(321) 및 제 2 실장전극(322) 상부까지 확장되어 구동전극(351, 352)을 형성하기 어려울 수 있다. 다만 상기 UV 조사 시간은 조사되는 UV의 광량에 따라 다르므로 이에 제한되지 않는다. The UV irradiation may be irradiated for 3 to 30 seconds, and after the UV irradiation, 90 to 130

Heat treatment can be performed for 1 to 2 minutes at. If the UV irradiation time is less than 3 seconds, there may be a problem that all of the exposed areas are not insoluble. When it exceeds 30 seconds, the exposed area of the photoresist layer 360 is the first mounting electrode 321 ) And the second mounting electrode 322 may be extended to the upper portion, so that it may be difficult to form the driving electrodes 351 and 352. However, the UV irradiation time is not limited thereto because it varies depending on the amount of UV irradiated.

미만이면 노광과 관계없이 현상액에 의해 광 레지스트 층이 제거되는 문제가 발생할 수 있고, 130

를 초과하면 광 레지스트 층이 과하게 고화되거나 변성되어 현상이 어려운 문제가 발생할 수 있다. In addition, the heat treatment temperature is 90

If it is less than 130, the photoresist layer may be removed by the developer regardless of exposure.

If exceeded, the photoresist layer may be excessively solidified or denatured, resulting in a problem that is difficult to develop.

In addition, if the heat treatment time is less than 1 minute, the photoresist layer may be removed by the developer regardless of exposure, and if it exceeds 2 minutes, the photoresist layer 360 is excessively solidified or denatured, making it difficult to develop. Can occur.

Next, as shown in FIG. 4D, the photoresist layer 360 may be developed to form a lift-off layer 361. Specifically, the lift-off layer 361 may be formed so as to expose an upper portion of the first mounting electrode 321 on which the insulating layer 330 is formed, an upper portion of the second mounting electrode 322, and both ends of the LED element 340.

The developing solution used for development can be used without limitation as long as it is a developing solution commonly used for development, and preferably tetramethyl ammonium hydroxide (TMAH), tetraethyl ammonium hydroxide, tetrapropyl ammonium hydroxide, tetrabutyl ammonium hydroxide, methyl hydroxide Triethylammonium, trimethylethylammonium hydroxide, dimethyldiethylammonium hydroxide, trimethyl(2-hydroxyethyl)ammonium hydroxide, triethyl(2-hydroxyethyl)ammonium hydroxide, dimethyldi(2-hydroxyethyl)ammonium hydroxide, Diethyl hydroxide (2-hydroxyethyl) ammonium, methyl tri (2-hydroxyethyl) ammonium hydroxide, ethyl tri (2-hydroxyethyl) ammonium hydroxide, tetra (2-hydroxyethyl) ammonium hydroxide and potassium hydroxide ( KOH) may be used, and more preferably tetramethylammonium hydroxide (TMAH) may be used.

Next, in order to form the first driving electrode 351 and the second driving electrode 352 in contact with at least a portion of both ends of each of the LED elements 340, as shown in Fig. 4(e), an electrode forming material is deposited. Thus, the first driving electrode 351, the second driving electrode 352, and the third driving electrode 353 may be formed. The electrode-forming material may be deposited by any one of a thermal evaporation method, an e-beam evaporation method, a sputtering evaporation method, and a screen printing method, and is preferably a thermal evaporation method, but is not limited thereto.

In addition, the third driving electrode 353 may be removed through a lift-off layer removal process described later.

The electrode-forming material is any one or more metal materials selected from the group consisting of aluminum, titanium, indium, gold, and silver, or in the group consisting of ITO (Indium tin oxide), ZnO:Al and CNT (Carbon nano tube)-conductive polymer composites. Optionally, any one or more transparent materials may be used. When the electrode formation material is two or more types, preferably, the first driving electrode 351 and the second driving electrode 352 may have a structure in which two or more types of materials are stacked. Even more preferably, the first driving electrode 351 and the second driving electrode 352 may be electrodes in which two types of materials are stacked of titanium/gold. However, the first driving electrode 351 and the second driving electrode 352 are not limited to the above description.

In addition, preferably, the electrode-forming material may form ohmic contact with the LED device.

Further, materials forming the first driving electrode 351 and the second driving electrode 352 may be the same or different.

Next, the lift-off layer 361 may be removed as shown in FIG. 4(f), and the third driving electrode 353 formed on the lift-off layer 361 may also be removed. As a result, it is possible to form the first driving electrode 351 and the second driving electrode 352 in contact with at least a portion of both ends of the LED element 340.

의 광 레지스트 리무버가 담긴 용기에 5 내지 30 분 동안 넣어서 수행할 수 있다. 만일 온도가 55

미만이면 광 레지스트 리무버의 반응성이 낮기 때문에 리프트오프층 (361)이 완전히 제거되지 않는 문제가 발생할 수 있고, 온도가 75

를 초과하면 LED 소자(340) 및 구동전극(361, 362)에 결함이 발생하는 등 본 발명의 목적을 달성하기에 어려울 수 있다. 또한, 5분 미만으로 수행할 경우 리프트오프층(361)이 완전히 제거되지 않는 문제가 발생할 수 있고, 30분을 초과할 경우 LED 소자 (340) 및 구동전극(351, 352)에 결함이 발생하는 등 본 발명의 목적을 달성하기에 어려울 수 있다.In addition, the lift-off layer 361 may be removed by putting it in a container containing a photoresist remover. Specifically, 55 to 75

It can be carried out by putting it in a container containing the photoresist remover for 5 to 30 minutes. If the temperature is 55

If it is less than, a problem in that the lift-off layer 361 is not completely removed may occur because the reactivity of the photoresist remover is low, and the temperature is 75

If it exceeds, it may be difficult to achieve the object of the present invention, such as a defect occurs in the LED element 340 and the driving electrodes 361 and 362. In addition, if the operation is performed for less than 5 minutes, a problem may occur in that the lift-off layer 361 is not completely removed, and if it exceeds 30 minutes, a defect occurs in the LED element 340 and the driving electrodes 351 and 352. Etc. It may be difficult to achieve the object of the present invention.

The photoresist remover may be used without limitation, as long as it is a photoresist remover that is commonly used, and preferably 2-(2-aminoethoxy)(2-(2-Aminoethoxy)), ethanol, and hydroxylamine ( hydroxylamine) and catechol (EKC 265 polymer, DuPont), acetone, N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO) Any one selected may be used, more preferably EKC 265 polymer may be used.

5 is a schematic diagram showing a manufacturing process of a driving electrode using an etching process in step (3) of a method of manufacturing an LED electrode assembly according to an embodiment of the present invention.

First, FIG. 5(a) shows a first mounting electrode 421 and a second mounting electrode 422 formed on a substrate 410, and a first mounting electrode 421 and a second mounting electrode formed on the substrate 410. Including an insulating film 430 formed on the electrode 422, an LED element 440 arranged so that both ends are positioned above the first mounting electrode 421 and the second mounting electrode 422 on which the insulating film 430 is formed The LED electrode assembly 400 is shown.

Next, as shown in FIG. 5B, an electrode forming material may be deposited on the LED electrode assembly 400 to form the driving electrode layer 450.

The electrode formation material may be deposited by any one of a thermal evaporation method, an e-beam evaporation method, a sputtering evaporation method, and a screen printing method, and preferably a thermal evaporation method, but is not limited thereto.

Next, a photoresist layer 460 may be formed on the driving electrode layer 450 as shown in FIG. 5C. A method of forming the photoresist layer 460 may be any one of spin coating, spray coating, and screen printing, and preferably spin coating, but is not limited thereto.

The photoresist layer 460 may be any one selected from a positive photoresist and a negative photoresist, but preferably, a positive photoresist is more advantageous in simplifying the process.

As an example, a case in which a positive photoresist is used will be described in detail. After curing the photoresist layer 460 as shown in FIG. 5(d), a first mounting electrode on top of the photoresist layer 460 ( The exposed area of the photoresist layer 460 may be solubilized by forming a mask 470 corresponding to the space of the 421 and the second mounting electrode 422 and irradiating UV with a direct lithography method. The UV irradiation may be irradiated for 0.5 to 30 seconds, preferably for 2 to 15 seconds. If the UV irradiation time is less than 0.5 seconds, there may be a problem in that the exposed areas are not all soluble and the pattern is not formed. If the UV irradiation time is more than 30 seconds, the exposed areas are expanded and the driving electrode in the etching process described later It may be difficult to achieve the object of the present invention, such as excessive removal.

Next, as shown in FIG. 5(e), the exposed area of the photoresist layer may be developed. When the exposed area is developed, the first photoresist layer 461 and the second photoresist layer 462 are formed to correspond to the spaces of the first mounting electrode 421 and the second mounting electrode 422. The reason why only a part of the photoresist layer is developed is that the driving electrodes 451 and 452 corresponding to the spaces of the first mounting electrode 421 and the second mounting electrode 422 are not etched in the etching process described later, and the photoresist This is to remove only some of the driving electrodes 453 exposed by layer development.

Meanwhile, in the case of forming the positive photoresist layer, the developing time may be 15 to 75 seconds, and preferably 30 to 60 seconds. If the developing time is less than 15 seconds, the photoresist layer 460 is not well developed, and when the development time exceeds 75 seconds, the photoresist layer 460 is excessively developed and the driving electrode in the etching process described later It may be difficult to achieve the object of the present invention, such as excessive removal.

Next, as shown in FIG. 5(f), some of the driving electrodes 453 exposed by the development of the photoresist layer may be removed through an etching process. Through the etching process, the first driving electrode 451 and the second driving electrode 452 are formed to correspond to the spaces of the first mounting electrode 421 and the second mounting electrode 422.

The etching process may be used without limitation as long as it is a method commonly used for metal etching, preferably a dry etching method and a wet etching method, and more preferably, the dry etching method is used for etching in a certain direction. It is advantageous. In addition, the dry etching may be used without limitation, as long as it is a gas commonly used for dry etching, preferably any one gas selected from CF ₄ and Cl ₂ may be used, and when using CF ₄ , 40 to 120 sccm , 90 to 110 W and 0.040 to 0.070 Torr, and in the case of using Cl ₂ can be performed under the conditions of 10 to 30 sccm, 70 to 90 W, and 0.06 to 0.1 Torr.

Next, as shown in FIG. 5(g), the photoresist layers 461 and 462 on the first driving electrode 451 and the second driving electrode 452 are removed to manufacture an LED electrode assembly having the driving electrode formed thereon. have.

The first photoresist layer 461 and the second photoresist layer 462 above the first driving electrode 451 and the second driving electrode 452 are removed by putting them in a container containing a photoresist remover. can do.

의 광 레지스트 리무버가 담긴 용기에 5 내지 30 분 동안 넣어서 수행할 수 있다. 만일 온도가 55

미만이면 광 레지스트 리무버의 반응성이 낮기 때문에 광 레지스트층(461, 462)이 완전히 제거되지 않는 문제가 발생할 수 있고, 온도가 75

를 초과하면 LED 소자(440) 및 구동전극(451, 452)에 결함이 발생하는 등 본 발명의 목적을 달성하기에 어려울 수 있다. 또한, 5분 미만으로 수행할 경우 광 레지스트층(461, 462)이 완전히 제거되지 않는 문제가 발생할 수 있고, 30분을 초과할 경우 LED 소자 (440) 및 구동전극(451, 452)에 결함이 발생하는 등 본 발명의 목적을 달성하기에 어려울 수 있다.Specifically 55 to 75

It can be carried out by putting it in a container containing the photoresist remover for 5 to 30 minutes. If the temperature is 55

If it is less than the photoresist remover's reactivity, the photoresist layers 461 and 462 are not completely removed, and the temperature is 75.

If it exceeds, it may be difficult to achieve the object of the present invention, such as a defect occurs in the LED element 440 and the driving electrodes 451 and 452. In addition, if the operation is performed for less than 5 minutes, a problem may occur in that the photoresist layers 461 and 462 are not completely removed, and if it exceeds 30 minutes, the LED element 440 and the driving electrodes 451 and 452 are defective. It may be difficult to achieve the object of the present invention, such as occurring.

The photoresist remover may be used without limitation, as long as it is a photoresist remover that is commonly used, and preferably 2-(2-aminoethoxy)(2-(2-Aminoethoxy)), ethanol, and hydroxylamine ( hydroxylamine) and catechol (EKC 265 polymer, DuPont), acetone, N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO) Any one selected may be used, more preferably EKC 265 polymer may be used.

Meanwhile, the present invention includes a lamp including the LED electrode assembly according to the present invention described above. The lamp may further include a support for receiving or supporting the LED electrode assembly. The support may be used without limitation in the case of a support commonly used in LED lamps, but preferably may be any one material selected from the group consisting of organic resins, ceramics, metals, and inorganic resins, and the material may be transparent or opaque. have. In addition, the shape of the support body may be a cup shape or a flat plate shape, but is not limited thereto, and the shape of the support body may be differently designed according to the purpose, and thus the shape of the support body is not particularly limited. When the support is in the shape of a cup, the internal volume can be varied in proportion to the size and density of the electrodes in which the LED elements are arranged. In addition, the internal volume of the support may vary depending on the thickness of the support. The thickness of the support may be the same at all points on the support or may be different at some points. The thickness of the support is not particularly limited in the present invention as it may be designed differently according to the purpose.

In addition, the lamp may further include a phosphor that is provided inside the support and is excited by light irradiated from the LED element. For example, when the LED device is a UV LED device, the phosphor excited by UV may be preferably a phosphor having any one of blue, yellow, green, amber, and red, and at this time, a single color emitting any one selected color It can be an LED lamp. In addition, preferably, the phosphor excited by UV may be any one or more of blue, yellow, green, amber and red, and more preferably blue/yellow, blue/green/red and blue/green/amber/red Any one type of mixed phosphor may be used, and in this case, white light may be irradiated by the phosphor. As the specific phosphor can be used by selecting a known phosphor in consideration of the light color emitted by the selected LED element, the detailed description thereof will be omitted.

In addition, the present invention can provide a backlight unit including the LED electrode assembly according to the present invention.

In more detail, the light-receiving display may include a backlight unit, a display panel positioned above the backlight unit, and a support member supporting and receiving the backlight unit and the display panel. At this time, the backlight unit further includes at least one LED electrode assembly capable of supplying light to the display panel and a reflective member disposed under the LED electrode assembly and reflecting incident light toward the display panel on which the image is displayed, The LED electrode assembly may further include an optical sheet that transmits only linearly polarized light in a specific direction (or reflects linearly polarized light in the other direction) of light emitted from the LED electrode assembly. Each of the configurations of the backlight unit and the light-receiving display may employ a configuration known in the display field, and thus detailed descriptions thereof will be omitted.

In addition, the LED electrode assembly according to the embodiment of the present invention described above can be applied to a color-by-blue LED display.

At least one of the LED electrode assemblies may form a subpixel or a unit pixel. When the LED element provided in the LED electrode assembly is a single color LED element, for example, a blue LED element, the LED display includes a red, green color conversion layer formed on the subpixel or unit pixel on which the LED electrode assembly is provided It may further include, and through this, it is possible to implement a color-by-blue LED display. Other configurations of the color-by-blue LED display may employ a configuration of a known LED display, and thus the detailed description thereof will be omitted.

In addition, the LED electrode assembly according to an embodiment of the present invention described above can be applied to a full-color LED display.

At least one of the LED electrode assemblies may form a subpixel or a unit pixel. As an example, an LED electrode assembly including an LED element of any one color among a blue LED element, a red LED element, and a green LED element is used to form a unit pixel that emits red, green, and blue light per subpixel to embody white light. It can be placed in the subpixels defined to represent the display, through which a full-color LED display can be implemented. Other configurations for the full-color LED display may employ a configuration of a known LED display, and thus the detailed description thereof will be omitted.

(Example 1)

A mounting electrode including a first mounting electrode and a second mounting electrode was formed on a 500 µm-thick substrate made of a quartz material. In this case, the width of the mounting electrode is 3 µm, the thickness is 0.2 µm, the material is titanium/gold, and the distance between the first mounting electrode and the adjacent second mounting electrode is 2.7 µm.

A silicon nitride insulating film was formed on the mounting electrode by a plasma chemical vapor deposition method. The thickness of the insulating layer was 200 nm based on the upper surface of the mounting electrode.

Thereafter, the LED devices having the specifications as shown in Table 1 were mixed in an amount of 1.0 parts by weight based on 100 parts by weight of acetone to prepare a solution including the LED devices.

division material Height(㎛) Diameter (㎛) Conductive electrode layer chrome 0.03 0.5 First conductivity type semiconductor layer n-GaN 2.67 0.5 Active layer InGaN 0.1 0.5 Second conductivity type semiconductor layer p-GaN 0.2 0.5 LED element - 3.0 0.5

The prepared solution was dropped on the substrate on which the mounting electrode was formed, and a power having a voltage of 100 V _pp and a frequency of 950 kHz was applied to the mounting electrode for 1 minute to align the LED devices. A driving electrode including a first driving electrode in contact with at least a portion of one end portion of each of the LED elements arranged on the mounting electrode having an insulating film formed thereon and a second driving electrode in contact with at least a portion of the other end portion was formed. In this case, the width of the driving electrode is 3 µm, the thickness is 0.2 µm, the material is titanium/gold, and the distance between the first driving electrode and the adjacent second driving electrode is 2.7 µm. (Example 2)

In the same manner as in Example 1, the LED elements were aligned by applying a power having a voltage of 60 V _pp and a frequency of 950 kHz to the mounting electrode for 1 minute.

(Example 3)

In the same manner as in Example 1, an insulating film having a thickness of 1000 nm was formed based on the upper surface of the mounting electrode.

(Comparative Example 1)

It was manufactured in the same manner as in Example 1, but the LED elements were aligned by applying power to the mounting electrode without forming an insulating film, and an LED electrode assembly was manufactured without forming a driving electrode.

(Comparative Example 2)

Manufacturing was carried out in the same manner as in Example 2, but the LED elements were aligned by applying power to the mounting electrode without forming an insulating film, and an LED electrode assembly was manufactured without forming a driving electrode.

(Experimental Example 1)

With respect to the LED electrode assemblies manufactured in Examples and Comparative Examples, the number of light emission of the LED element was observed through an optical microscope, and the number was counted and shown in Table 2 below.

Insulating film
Thickness (nm) Voltage (V _PP ) Frequency (kHz) LED element
Number of flashes Light quantity (%) Example 1 200 100 950 41565 41565/41565=100 Example 2 200 60 950 28156 28156/41565=68 Example 3 1000 100 950 31850 31850/41565=77 Comparative Example 1 - 100 950 5587 5587/41565=13 Comparative Example 2 - 60 950 5174 5174/41565=12

In Table 2, "number of light emission" refers to the number of LED devices emitting blue light when power is applied to the LED electrode assembly, and "light amount (%)" refers to the number of LED devices emitting blue light, referring to Example 1. When it is set to 100, it shows the relative ratio.

*143 First, when comparing Comparative Example 1 and Comparative Example 2, as shown in FIG. 10, Comparative Example 2, in which a power of 60V _pp was applied, did not cause damage to the electrode, but referring to FIG. 9, a power of 100V _pp was applied. In Comparative Example 1, electrode damage occurred. In addition, there was no significant difference in the amount of light between Comparative Example 1 and Comparative Example 2, and through this, it can be seen that the number of devices that actually emit light cannot be significantly increased even when the alignment voltage is increased in the LED electrode assembly without the insulating layer.

Next, comparing Example 1 with Comparative Example 1, Example 1 provided with an insulating film as shown in FIG. 6 did not cause damage to the electrode even when 100V _pp power was applied, and no insulating film was provided. It can be seen that the number of light emission is significantly higher than that of Comparative Example 1.

Next, Example 1 and Example 2 provided with the insulating film having the same thickness, and as shown in Figs. 6 and 7, no damage to the electrode occurred. In addition, it was observed that Example 1 to which a relatively high voltage was applied had a higher number of emission than Example 2.

Next, in Example 1 and Example 3, the LED elements were aligned by applying power of the same voltage, and electrode damage did not occur as shown in FIGS. 6 and 8. In addition, Example 3 having a relatively thick insulating film was observed to have a lower number of light emission than Example 1, and it is believed that this is because the influence of the magnetic field that aligns the LED elements decreased as the thickness of the insulating film increased. As shown in FIG. 8, it can be seen that some of the LED devices mounted in Example 3 are positioned only above one of the first mounting electrode and the second mounting electrode. As described above, when both ends of the LED device are not positioned above the first mounting electrode and the second mounting electrode, the LED device may not emit light even when the driving electrode is formed.

Although an embodiment of the present invention has been described above, the spirit of the present invention is not limited to the embodiment presented in the present specification, and those skilled in the art who understand the spirit of the present invention can add components within the scope of the same idea. It will be possible to easily propose other embodiments by changing, deleting, adding, etc., but it will be said that this is also within the scope of the present invention.

100: LED electrode assembly
110, 210, 310, 410: substrate
121, 221, 321, 421: first mounting electrode
122, 222, 322, 422: second mounting electrode
130, 230, 430: insulating film
140, 240, 340, 440: LED element
141: first conductivity type semiconductor layer
142: second conductivity type semiconductor layer
143: active layer
144, 145: conductive electrode layer
151, 351, 451: first driving electrode
152, 352, 452: second driving electrode
151a: the first portion of the first driving electrode
152a: the first portion of the second driving electrode
151b: the second portion of the first driving electrode
152b: second portion of the second driving electrode
270: solution containing an LED element
350, 450, 453: driving electrode layer
353: third driving electrode layer
360, 460, 461, 462, 463: photoresist layer
361: lift-off floor
370, 470: mask

Claims (11)

A first electrode and a second electrode extending in a first direction and spaced apart in a second direction different from the first direction;
An insulating film formed on the first electrode and the second electrode;
At least one LED element arranged such that one end is positioned above the first electrode and the other end is positioned above the second electrode; And
A third electrode in contact with at least a portion of one end of each of the LED elements and a fourth electrode in contact with at least a portion of the other end,
The third electrode and the fourth electrode,
A first portion not in contact with the LED element but in contact with the insulating layer and extending in the first direction; And
And a second portion connected to the first portion and in contact with at least some of both ends and an outer surface of the LED element,
Part of the LED element is in contact with the insulating film and some of the outer surface does not contact the insulating film,
The LED device includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. The method of claim 1,
The insulating layer is an LED electrode assembly having a thickness of 1 nm to 100 μm. The method of claim 1,
The LED electrode assembly having an aspect ratio of 1.2 to 100 of the LED element. The method of claim 1,
The LED device has a length of 100nm to 10㎛ LED electrode assembly. Forming an insulating film on the first electrode and the second electrode extending in a first direction and spaced apart in a second direction different from the first direction, and on the first electrode and the second electrode;
A solution containing at least one LED element is added to the first electrode and the second electrode on which the insulating film is formed, and power is applied to the first electrode and the second electrode, so that the LED element is placed on the first electrode. Aligning one end so as to be positioned on the second electrode and the other end positioned on the second electrode; And
Forming a third electrode in contact with at least a portion of one end of each of the LED elements and a fourth electrode in contact with at least a portion of the other end of each of the LED elements; Including,
The third electrode and the fourth electrode,
A first portion not in contact with the LED element but in contact with the insulating layer and extending in the first direction; And
And a second portion connected to the first portion and in contact with at least some of both ends and an outer surface of the LED element,
Part of the LED element is in contact with the insulating film and some of the outer surface does not contact the insulating film,
The LED device is a method of manufacturing an LED electrode assembly comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. The method of claim 5,
The power applied in the step of aligning the LED devices is a method of manufacturing an LED electrode assembly having a voltage of 0.1 to 2000 V. The method of claim 6,
The frequency of the power supply is 10 Hz to 100 GHz LED electrode assembly manufacturing method. The backlight unit comprising a; LED electrode assembly according to any one of claims 1 to 4. Lamp comprising a; LED electrode assembly according to any one of claims 1 to 4. A full-color LED display comprising the LED electrode assembly according to any one of claims 1 to 4. The LED electrode assembly according to any one of claims 1 to 4 emitting blue light; And
Color conversion layer; Color-by-blue (Color-by-blue) LED display comprising a.

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