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KR102163441B1 - 웨이퍼의 가공 방법 - Google Patents

웨이퍼의 가공 방법 Download PDF

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Publication number
KR102163441B1
KR102163441B1 KR1020150004005A KR20150004005A KR102163441B1 KR 102163441 B1 KR102163441 B1 KR 102163441B1 KR 1020150004005 A KR1020150004005 A KR 1020150004005A KR 20150004005 A KR20150004005 A KR 20150004005A KR 102163441 B1 KR102163441 B1 KR 102163441B1
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KR
South Korea
Prior art keywords
wafer
divided
line
along
grinding
Prior art date
Application number
KR1020150004005A
Other languages
English (en)
Korean (ko)
Other versions
KR20150085474A (ko
Inventor
슌이치로 히로사와
šœ이치로 히로사와
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20150085474A publication Critical patent/KR20150085474A/ko
Application granted granted Critical
Publication of KR102163441B1 publication Critical patent/KR102163441B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/98—Methods for disconnecting semiconductor or solid-state bodies

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
KR1020150004005A 2014-01-15 2015-01-12 웨이퍼의 가공 방법 KR102163441B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-004796 2014-01-15
JP2014004796A JP6230422B2 (ja) 2014-01-15 2014-01-15 ウエーハの加工方法

Publications (2)

Publication Number Publication Date
KR20150085474A KR20150085474A (ko) 2015-07-23
KR102163441B1 true KR102163441B1 (ko) 2020-10-08

Family

ID=53620603

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150004005A KR102163441B1 (ko) 2014-01-15 2015-01-12 웨이퍼의 가공 방법

Country Status (4)

Country Link
JP (1) JP6230422B2 (ja)
KR (1) KR102163441B1 (ja)
CN (1) CN104779204B (ja)
TW (1) TWI625810B (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6300763B2 (ja) * 2015-08-03 2018-03-28 株式会社ディスコ 被加工物の加工方法
JP6576211B2 (ja) * 2015-11-05 2019-09-18 株式会社ディスコ ウエーハの加工方法
JP6558541B2 (ja) * 2015-12-09 2019-08-14 株式会社ディスコ ウエーハの加工方法
SG11201902922WA (en) 2016-10-03 2019-05-30 Lintec Corp Adhesive tape for semiconductor processing, and semiconductor device manufacturing method
JP6720043B2 (ja) * 2016-10-05 2020-07-08 株式会社ディスコ 加工方法
KR102399356B1 (ko) * 2017-03-10 2022-05-19 삼성전자주식회사 기판, 기판의 쏘잉 방법, 및 반도체 소자
JP6649308B2 (ja) * 2017-03-22 2020-02-19 キオクシア株式会社 半導体装置およびその製造方法
JP6906845B2 (ja) * 2017-06-22 2021-07-21 株式会社ディスコ 被加工物の加工方法
JP2019024038A (ja) * 2017-07-24 2019-02-14 株式会社ディスコ ウェーハの加工方法
JP6981800B2 (ja) * 2017-07-28 2021-12-17 浜松ホトニクス株式会社 積層型素子の製造方法
JP2019029941A (ja) * 2017-08-02 2019-02-21 株式会社ディスコ 弾性波デバイス用基板の製造方法
JP7027234B2 (ja) * 2018-04-16 2022-03-01 株式会社ディスコ ウエーハの加工方法
JP7058738B2 (ja) * 2018-07-19 2022-04-22 東京エレクトロン株式会社 基板処理システム及び基板処理方法
JP7154860B2 (ja) * 2018-07-31 2022-10-18 株式会社ディスコ ウエーハの加工方法
JP2020057709A (ja) * 2018-10-03 2020-04-09 株式会社ディスコ ウェーハの加工方法
CN109590288B (zh) * 2018-11-28 2021-06-04 四川大学 激光清洗透光介质透射面杂质的方法
CN113165109B (zh) * 2018-12-21 2023-06-27 东京毅力科创株式会社 基板处理装置和基板处理方法
TWI722642B (zh) * 2019-11-07 2021-03-21 長豐光學科技股份有限公司 薄型線路雷射加工方法
JP7433725B2 (ja) 2020-06-26 2024-02-20 株式会社ディスコ チップの製造方法
CN111987146A (zh) * 2020-09-21 2020-11-24 上海擎茂微电子科技有限公司 一种用于制备半导体器件的晶圆及晶圆的背面减薄方法
CN114160958A (zh) * 2021-12-07 2022-03-11 华东光电集成器件研究所 一种晶圆激光隐形切割与机械切割结合的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100852811B1 (ko) 2005-11-09 2008-08-18 가부시끼가이샤 도시바 반도체 장치의 제조 방법
JP2012199374A (ja) * 2011-03-22 2012-10-18 Fujitsu Semiconductor Ltd 半導体チップの製造方法
JP2013004583A (ja) * 2011-06-13 2013-01-07 Tokyo Seimitsu Co Ltd 半導体基板の切断方法及び半導体基板の切断装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6438209A (en) 1987-08-04 1989-02-08 Nec Corp Preparation of semiconductor device
CN100355032C (zh) * 2002-03-12 2007-12-12 浜松光子学株式会社 基板的分割方法
JP4440582B2 (ja) * 2003-09-10 2010-03-24 浜松ホトニクス株式会社 半導体基板の切断方法
JP4917257B2 (ja) * 2004-11-12 2012-04-18 浜松ホトニクス株式会社 レーザ加工方法
US20070155131A1 (en) * 2005-12-21 2007-07-05 Intel Corporation Method of singulating a microelectronic wafer
JP5595716B2 (ja) * 2009-11-18 2014-09-24 株式会社ディスコ 光デバイスウエーハの加工方法
JP5992731B2 (ja) * 2012-06-07 2016-09-14 株式会社ディスコ ウエーハの加工方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100852811B1 (ko) 2005-11-09 2008-08-18 가부시끼가이샤 도시바 반도체 장치의 제조 방법
JP2012199374A (ja) * 2011-03-22 2012-10-18 Fujitsu Semiconductor Ltd 半導体チップの製造方法
JP2013004583A (ja) * 2011-06-13 2013-01-07 Tokyo Seimitsu Co Ltd 半導体基板の切断方法及び半導体基板の切断装置

Also Published As

Publication number Publication date
CN104779204A (zh) 2015-07-15
JP2015133435A (ja) 2015-07-23
CN104779204B (zh) 2019-07-02
KR20150085474A (ko) 2015-07-23
JP6230422B2 (ja) 2017-11-15
TW201528410A (zh) 2015-07-16
TWI625810B (zh) 2018-06-01

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