KR101847246B1 - Wafer processing tape - Google Patents
Wafer processing tape Download PDFInfo
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- KR101847246B1 KR101847246B1 KR1020150170629A KR20150170629A KR101847246B1 KR 101847246 B1 KR101847246 B1 KR 101847246B1 KR 1020150170629 A KR1020150170629 A KR 1020150170629A KR 20150170629 A KR20150170629 A KR 20150170629A KR 101847246 B1 KR101847246 B1 KR 101847246B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
- H01L2924/35121—Peeling or delaminating
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- Engineering & Computer Science (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
Abstract
A problem to be solved by the present invention is to provide a wafer processing tape capable of reducing occurrence of a label mark and reducing air (air) mixing between an adhesive layer and a release film.
The adhesive layer 12 is formed on the first surface of the release film 11. The adhesive layer 12 is formed on the first surface of the release film 11. The adhesive layer 12 is formed on the first surface of the release film 11, An adhesive film 13 having a label portion 13a having a predetermined planar shape and contacting with the release film 11 and a peripheral portion 13b surrounding the outer side of the label portion 13a; And the support member 14 is provided on both sides in the shorter direction of the release film 11 and the support member 14 is placed on the second surface opposite to the first surface of the adhesive layer 12 at 0.3 times And a thickness less than 1.0 times.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer processing tape, and more particularly, to a wafer processing tape having two functions of a dicing tape and a die bonding film.
BACKGROUND ART [0002] In recent years, in order to adhere a dicing tape for fixing a semiconductor wafer when a semiconductor wafer is cut and separated (diced) into individual chips, for adhering a cut semiconductor chip to a lead frame or a package substrate, A dicing / die bonding tape having two functions of a die bonding film (also referred to as a die attach film) for laminating and bonding semiconductor chips to each other has been developed.
Such a dicing / die bonding tape has been subjected to free cutting in consideration of workability such as attachment to a wafer and installation of a ring frame at the time of dicing.
Examples of the pre-cut dicing and die bonding tapes are shown in Figs. 3 and 4. Fig. Fig. 4 is a plan view of the dicing / die bonding tape. Fig. 4 (b) is a cross-sectional view taken along line sectional view taken along the line BB in FIG. The dicing /
The
In the dicing and
In order to solve such a problem, a wafer processing tape having a supporting member provided on both sides of the release film on the second surface opposite to the first surface provided with the adhesive layer and the adhesive film, (See, for example, Patent Document 1). Since such a wafer for processing tapes is provided with a supporting member, the winding pressure applied to the tape can be dispersed or collected in the supporting member when the wafer for processing tape is wound in a roll form. Therefore, Can be suppressed.
The
Such air penetrates between the
Voids are formed between the semiconductor wafer and the
In order to suppress the occurrence of the transfer mark, a method of weakening the winding pressure of the tape for processing a wafer can be considered. However, in this method, winding displacement occurs and it becomes difficult, for example, There is a fear that it may interfere.
When the thickness of the supporting member is equal to or more than the thickness of the adhesive layer in order to effectively prevent a transfer mark when the supporting member is provided as in the case of the wafer processing tape of Patent Document 1, It was found that the air at the periphery of the adhesive layer was easily attracted to the inside of the adhesive layer because the pressing force by the pressure was applied to the portion of the outer side of the adhesive layer which was higher than the portion corresponding to the adhesive layer.
Accordingly, it is an object of the present invention to provide a wafer processing tape capable of reducing the occurrence of a label mark and capable of reducing air (air entrainment) between an adhesive layer and a release film .
In order to solve the above problems, a wafer processing tape according to the present invention comprises a long release film, an adhesive layer having a predetermined planar shape provided on a first surface of the release film, and a second adhesive layer covering the adhesive layer, An adhesive film having a label portion having a predetermined planar shape provided to contact the release film around the periphery of the label portion and a peripheral portion surrounding the outside of the label portion; And a support member provided on both ends in the short direction of the release film, wherein the support member has a thickness of 0.3 times or more and less than 1.0 times the thickness of the adhesive layer.
It is preferable that the semiconductor processing tape has a linear expansion coefficient of 300 ppm / 占 폚 or less.
It is preferable that the difference between the linear expansion coefficient of the support member and the linear expansion coefficient of the release film is 250 ppm / 占 폚 or less in the semiconductor processing tape.
It is preferable that the adhesive film of the tape for semiconductor processing has a pressure-sensitive adhesive layer and a base film, and a coefficient of static friction between the base film and the support member is 0.2 to 2.0.
It is preferable that the semiconductor processing tape is provided with a supporting member in a region on the second surface of the release film corresponding to the outside of the adhesive layer provided on the first surface.
It is preferable that the semiconductor processing tape is provided such that the supporting members are continuously provided along the long (length) direction of the release film.
In the semiconductor processing tape, the supporting member may be colored. At this time, it is preferable that the supporting member is colored depending on the kind of the wafer processing tape. It may also be colored depending on the thickness of the wafer processing tape.
In the semiconductor processing tape, it is preferable that the support member has a laminated structure of two or more layers.
It is preferable that the above-mentioned semiconductor processing tape is a dicing tape in which the support member is coated with a point-adhesive on a resin film base material selected from the group consisting of polyethylene terephthalate, polypropylene and high-density polyethylene.
The semiconductor processing tape preferably has a ratio Eb / Ea of the tensile storage elastic modulus Eb of the pressure-sensitive adhesive film at 23 ° C and the tensile storage elastic modulus Ea of the release film at 23 ° C of from 0.001 to 100.
In the semiconductor processing tape, the ratio Ta / Tb of the thickness Ta of the release film to the thickness Tb of the adhesive film is preferably 0.07 to 2.5.
The peeling force F1 between the adhesive layer and the release film in the T-type peeling test under the condition of the temperature of 23 占 폚 and the peeling speed of 300 mm / min is 0.025 to 0.075 N / 100 mm , And the peeling force F2 between the adhesive layer and the adhesive film is 0.08 to 10 N / 100 mm, and F1 < F2 is preferable.
According to the present invention, it is possible to reduce the occurrence of label marks and to reduce the mixing of air (air) between the adhesive layer and the adhesive film.
Fig. 1 (a) is a plan view of a wafer processing tape according to an embodiment of the present invention, and Fig. 1 (b) is a sectional view taken along the line AA in Fig.
2 is a sectional view of a wafer processing tape according to another embodiment of the present invention.
3 is a perspective view of a conventional wafer processing tape.
Fig. 4 (a) is a plan view of a conventional wafer processing tape, and Fig. 4 (b) is a sectional view taken along the line BB in Fig.
5 is a cross-sectional view showing a state in which a wafer processing tape and a dicing ring frame are joined;
6 is a schematic view for explaining a problem of a conventional wafer processing tape.
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Fig. 1 (a) is a plan view of a wafer processing tape (dicing and die bonding tape) according to an embodiment of the present invention, and Fig. 1 (b) is a sectional view taken along the line A-A in Fig.
1 (a) and 1 (b), the
The
Hereinafter, each component of the
(Release film)
Examples of the
The thickness of the release film is not particularly limited and may be appropriately set, but it is preferably 25 to 50 占 퐉.
(Adhesive layer)
The
The
(Adhesive film)
The
As the
The base film of the
Examples of the material include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene- Homopolymers or copolymers of? -Olefins such as methyl acrylate, methyl acrylate, methyl acrylate, methyl acrylate, methyl acrylate, methyl acrylate, methyl acrylate, methyl acrylate, Thermoplastic elastomers, and mixtures thereof. The base film may be a mixture of two or more kinds of materials selected from these groups, or may be a single layer or a multi-layered film.
The thickness of the base film is not particularly limited and may be appropriately set, but is preferably 50 to 200 占 퐉.
The resin used for the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film (13) is not particularly limited, and known chlorinated polypropylene resin, acrylic resin, polyester resin, polyurethane resin, epoxy resin and the like used for the pressure-sensitive adhesive can be used.
A pressure sensitive adhesive is preferably prepared by appropriately blending an acrylic pressure sensitive adhesive, a radiation polymerizable compound, a photopolymerization initiator, a curing agent and the like to the resin of the pressure sensitive adhesive layer (13). The thickness of the pressure-
The radiation-polymerizable compound can be mixed with the pressure-sensitive adhesive layer and easily peeled from the adhesive layer by radiation curing. As the radiation polymerizing compound, for example, a low-molecular compound having at least two photopolymerizable carbon-carbon double bonds in molecules capable of forming a three-dimensional network by light irradiation is used.
Specific examples include trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene Glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, and the like are applicable.
In addition to the above acrylate compounds, urethane acrylate oligomers may also be used. The urethane acrylate oligomer is obtained by reacting a polyol compound such as polyester type or polyether type with a polyisocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene Acrylate or methacrylate having a hydroxyl group (e.g., an isocyanate group-containing urethane prepolymer, a urethane prepolymer, a urethane prepolymer, a urethane prepolymer, or a urethane prepolymer) is reacted with a terminal isocyanate urethane prepolymer obtained by reacting isocyanate, 1,4-xylylene isocyanate, Hydroxyethyl acrylate, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate) Loses.
The pressure-sensitive adhesive layer may be a mixture of two or more kinds selected from the above-mentioned resins.
When a photopolymerization initiator is used, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, Benzyl dimethyl ketal,? -Hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenyl propane and the like can be used. The blending amount of these photopolymerization initiators is preferably 0.01 to 5 parts by mass relative to 100 parts by mass of the acrylic copolymer.
(Supporting member)
The
When the support member is formed on the first surface 11a provided with the
In the case where the support member is formed on the first surface 11a provided with the adhesive 12 and the
In addition, by providing the
The supporting
The thickness of the
The
The
The coefficient of linear expansion of the
The difference between the linear expansion coefficient of the
(1) When a dimensional difference occurs in accordance with the temperature change, voids may occur between the
(2) When the user handles in a roll shape, the possibility of collapse of the winding increases. More specifically, for example, even when normally wound at the time of manufacture and shipping, there is a possibility that a dimensional difference occurs at the time of use at room temperature from refrigeration storage at the user side and at refrigeration storage at the time of use at room temperature, and the possibility of collapse of winding is increased.
(3) A clearance is formed between the sheets wound in a roll shape by the dimensional difference, and the possibility of contamination of the foreign matters from the roll side is increased.
(4) In the case where the tape for wafer processing has a large number of windings or a wide product width, the cooling speed is lower than or equal to the cooling rate on the roll center side and the outer peripheral side of the roll when refrigerated from room temperature. As a result, the difference in dimension between the
In the present invention, the coefficient of linear expansion refers to an increasing rate of spatial expansion of an object when the temperature is changed under static pressure. When the temperature is T and the length of the solid is L, the coefficient of linear expansion? Is given by the following equation.
? = (1 / L) (? L /? T)
The coefficient of linear expansion in the present invention can be measured using a thermomechanical analyzer (TMA), for example, according to JIS K7197, a linear expansion coefficient test method by thermomechanical analysis of plastic, 5 mm and a distance between the chucks of 10 mm. The sample can be measured under the conditions of a tensile load of 10 g, a temperature rise rate of 5 ° C / min, an N 2 gas atmosphere, and a measurement temperature range of -20 ° C to 50 ° C.
The supporting
The coefficient of static friction between the
In the present invention, the coefficient of static friction between the
The lower film is fixed by superposing both the base film of the
μd = Fd / W
As the
The base resin of the viscous adhesive tape is not particularly limited as long as it satisfies the range of the linear expansion coefficient and can withstand the winding pressure. However, from the viewpoints of heat resistance, smoothness and easy accessibility, polyethylene terephthalate (PET) And high-density polyethylene.
The composition and physical properties of the pressure-sensitive adhesive of the pressure-sensitive adhesive tape are not particularly limited and may be those that can not be peeled off from the
As the
The
As the value of Eb / Ea is larger, the
Since the Eb / Ea is not more than 100, the hardness (tensile storage elastic modulus Ea) of the
As described above, according to the above constitution, it is possible to suppress the occurrence of the transfer-causing mark on the
In the above configuration, the thickness of the
In the above constitution, the tensile storage elastic modulus Eb of the pressure-
In the above configuration, it is preferable that the
The
When the thickness Ta of the
The peel force F1 between the
The
In the above-described constitution, the peeling force F1 between the
[Example]
EXAMPLES Next, examples of the present invention will be described, but the present invention is not limited to these examples.
(1) Release film
The following release films were prepared.
Release film A1: A polyethylene terephthalate film (having a tensile storage modulus of 4070 MPa and a coefficient of linear expansion of 60 ppm)
Release film A2: A polyethylene terephthalate film having a thickness of 100 占 퐉 and subjected to silicone release treatment (tensile storage modulus of elasticity: 3910 MPa, coefficient of linear expansion: 60 ppm)
Release film A3: a polyethylene terephthalate film (having a tensile storage modulus of 4020 MPa and a coefficient of linear expansion of 60 ppm)
Release film A4: a polyethylene terephthalate film having a thickness of 38 mu m and subjected to silicone release treatment (tensile storage modulus 4020 MPa, coefficient of linear expansion 60 ppm)
Release film A5: Low density polyethylene (LDPE) film having a thickness of 25 占 퐉 and a silicon release treatment (tensile storage modulus: 105 MPa; coefficient of linear expansion: 230 ppm)
(2) Production of adhesive film
<Adhesive Film B1>
A copolymer having 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, a ratio of 2-ethylhexyl acrylate of 60 mol% and a weight average molecular weight of 70,000, as an acrylic copolymer having a functional group . Next, 2-isocyanate ethyl methacrylate was added so that the iodine value was 20, and an acrylic copolymer (b-1) having a glass transition temperature of -50 占 폚, a hydroxyl value of 10 mgKOH / g and an acid value of 5 mgKOH / ).
5 parts by mass of Coronate L (manufactured by Nippon Polyurethane Co., Ltd.) as polyisocyanate and 3 parts by mass of Esacure KIP 150 (manufactured by Lamberti) as a photopolymerization initiator were added to 100 parts by mass of the acrylic copolymer (b-1) Dissolved in ethyl acetate, and stirred to prepare a pressure-sensitive adhesive composition.
Next, the pressure-sensitive adhesive composition was applied to a release liner including a release-treated polyethylene terephthalate film so that the thickness after drying became 10 占 퐉, dried at 110 占 폚 for 3 minutes and then stuck to an ethylene / vinyl acetate copolymer 1, Ultra sensor 636), and an adhesive film B1 having a thickness of 60 m was produced. The tensile storage modulus was 40 MPa.
<Adhesive film B2>
The pressure-sensitive adhesive composition was applied to a release liner including a release-treated polyethylene terephthalate film so that the thickness after drying was 5 占 퐉, dried at 110 占 폚 for 3 minutes, and then covered with low density polyethylene (LDPE, no release treatment) (Having a thickness of 40 mu m) to prepare a pressure-sensitive adhesive film B2 having a thickness of 45 mu m. The tensile storage modulus was 105 MPa.
≪ Adhesive film B3 &
The pressure-sensitive adhesive composition was applied to a release liner including a release-treated polyethylene terephthalate film so that the thickness after drying became 10 占 퐉, dried at 110 占 폚 for 3 minutes, and then washed with an ionomer of an ethylene / methacrylic acid copolymer (150 占 퐉 in thickness), which had a thickness of 120 占 퐉 and a thickness of 30 占 퐉 and a thickness of 30 占 퐉, manufactured by Mitsui DuPont Polychemicals Co., Ltd., High Milan 1554). The tensile storage modulus was 301 MPa.
≪ Adhesive Film B4 &
The pressure-sensitive adhesive composition was applied to a release liner including a release-treated polyethylene terephthalate film so that the thickness after drying became 10 占 퐉, dried at 110 占 폚 for 3 minutes, and then washed with an ionomer of an ethylene / methacrylic acid copolymer (110 占 퐉 in thickness) including a polyethylene terephthalate film (manufactured by Mitsui DuPont Polychemical Co., Ltd., High Milan 1554). Thus, an adhesive film B4 having a thickness of 120 占 퐉 was produced. The tensile storage modulus was 289 MPa.
<Adhesive film B5>
The pressure-sensitive adhesive composition was applied to a release liner including a release-treated polyethylene terephthalate film so that the thickness after drying became 10 占 퐉 and dried at 110 占 폚 for 3 minutes. Then, an ethylene / propylene block copolymer , Prime Polypro F707W) to prepare an adhesive film B5 having a thickness of 120 mu m. The tensile storage elastic modulus was 980 MPa.
(3) Formation of adhesive layer
<Adhesive Layer C1>
15.0 parts by mass of an epoxy resin "YX4000" (biphenyl novolak type epoxy resin, epoxy equivalent 185), 40.0 parts by mass of a phenol resin "LF-6161" (manufactured by DIC, novolak phenol resin, hydroxyl equivalent 118) 45.0 parts by weight of an epoxy resin "Epicoat 828" (bisphenol A epoxy resin, epoxy equivalent 190, Mitsubishi Kagaku Co., Ltd.), 5 parts by mass of "Aerosil R972" (average particle diameter of primary particle diameter: , MEK was added to the composition and stirred to obtain a uniform composition.
To this was added 66.7 parts by mass of an acrylic copolymer (weight average molecular weight: 8,500,000, Tg of 20 占 폚) containing monomer units derived from glycidyl acrylate or glycidyl methacrylate as a polymer containing a functional group, 0.6 part by mass of KBM-802 (manufactured by Shin-Etsu Silicone Co., Ltd., mercaptopropyltrimethoxysilane) and "Cure Sol 2PHZ-PW" (available from Shikoku Chemicals Inc .; 2-phenyl-4,5-dihydroxymethylimide Sol, decomposition temperature 230 占 폚), and the mixture was stirred and mixed until homogeneous. Further, this was filtered with a filter of 100 mesh, and vacuum degassing was carried out to obtain a varnish (c-1) of an adhesive composition.
The varnish (c-1) was coated on the release film A1 by a coater so as to have a dry film thickness of 30 占 퐉 and dried at 120 占 폚 for 5 minutes to produce an adhesive layer C1 having a thickness of 30 占 퐉.
<Adhesive Layer C2>
The varnish (c-1) was coated on the release film A2 with a coater so as to have a dry film thickness of 30 占 퐉 and dried at 120 占 폚 for 5 minutes to prepare an adhesive layer C2 having a thickness of 30 占 퐉.
<Adhesive Layer C3>
The varnish (c-1) was coated on the release film A1 by a coater so as to have a dry film thickness of 60 占 퐉 and dried at 120 占 폚 for 8 minutes to prepare an adhesive layer C3 having a thickness of 60 占 퐉. Thereafter, the adhesive layer C3 was transferred from the release film A1 to the release film A3.
<Adhesive Layer C4>
The varnish (c-1) was coated on the release film A4 with a coater so as to have a dry film thickness of 60 占 퐉 and dried at 120 占 폚 for 8 minutes. Two sheets of the varnish Layer C4 was produced, and one release film A4 was peeled off.
<Adhesive Layer C5>
The varnish (c-1) was coated on the release film A4 by a coater so as to have a dry film thickness of 60 탆, and dried at 120 캜 for 8 minutes to prepare an adhesive layer C5 having a thickness of 60 탆.
<Adhesive Layer C6>
The varnish (c-1) was coated on the release film A4 by a coater so as to have a dry film thickness of 60 탆 and dried at 120 캜 for 8 minutes to form an adhesive layer C6 having a thickness of 60 탆. Thereafter, the adhesive layer C6 was transferred from the release film A4 to the release film A5.
<Adhesive Layer C7>
The varnish (c-1) was coated on the release substrate A1 with a coater so as to have a dry film thickness of 30 占 퐉 and dried at 120 占 폚 for 5 minutes to prepare an adhesive layer C7 having a thickness of 30 占 퐉.
<Adhesive Layer C8>
40 parts by mass of epoxy resin "1002" (solid bisphenol A type epoxy resin, epoxy equivalent 600), 100 parts by mass of epoxy resin "806" (bisphenol F type epoxy resin, epoxy equivalent 160, specific gravity 1.20) , 5 parts by mass of a curing agent " Dyhard 100SF " (Degussa, dicyandiamide), 200 parts by mass of a silica filler " SO-C2 " (Admafine, average particle diameter 0.5 탆) MEK was added to a composition containing 3 parts by mass of an average particle diameter of primary particle diameter of 0.016 mu m, manufactured by Nippon Aerosil Co., Ltd.) and stirred to prepare a uniform composition.
100 parts by mass of a phenoxy resin " PKHC " (product of INCHEM, weight average molecular weight: 43,000, glass transition temperature: 89 占 폚), 100 parts by mass of KBM-802 (manufactured by Shinsei Silicone Co., Ltd., mercaptopropyltrimethoxysilane) And 0.5 parts by mass of "Cure Sol 2PHZ-PW" (2-phenyl-4,5-dihydroxymethylimidazole, decomposition temperature: 230 ° C., Shikoku Chemicals Co., Ltd.) as a mass part and a curing accelerator were added and stirred Respectively. This was further filtered through a 100-mesh filter and vacuum degassed to obtain a varnish (c-2) of an adhesive composition.
The varnish (c-2) was coated on the release film A4 by a coater so as to have a dry film thickness of 60 占 퐉 and dried at 120 占 폚 for 8 minutes to prepare an adhesive layer C8 having a thickness of 60 占 퐉.
(4) Production of Supporting Member
<Support member D1>
The pressure-sensitive adhesive composition was applied to a release liner including a release-treated polyethylene terephthalate film so that the thickness after drying became 10 占 퐉 and dried at 110 占 폚 for 3 minutes. Thereafter, a polyethylene terephthalate (without release treatment) And bonded to a resin film base material (thickness 16 mu m) to prepare a support member D1 having a thickness of 26 mu m. The tensile storage elastic modulus was 980 MPa and the linear expansion coefficient was 60 ppm.
<Support member D2>
The pressure-sensitive adhesive composition was applied to a release liner including a release-treated polyethylene terephthalate film so that the thickness after drying became 10 占 퐉 and dried at 110 占 폚 for 3 minutes, and then polypropylene (OPP, no release treatment) (Thickness: 25 mu m), and a support member D2 having a thickness of 35 mu m was produced. The linear expansion coefficient was 120 ppm.
≪ Support member D3 >
The pressure-sensitive adhesive composition was applied to a release liner including a release-treated polyethylene terephthalate film so that the thickness after drying was 5 占 퐉, dried at 110 占 폚 for 3 minutes, and then covered with low density polyethylene (LDPE, no release treatment) (Having a thickness of 50 mu m), and transferred to prepare a support member D3 having a thickness of 55 mu m. The coefficient of linear expansion was 230 ppm.
<Support member D4>
The pressure-sensitive adhesive composition was applied to a release liner including a release-treated polyethylene terephthalate film so that the thickness after drying became 10 占 퐉 and dried at 110 占 폚 for 3 minutes. Thereafter, a polyethylene terephthalate (without release treatment) And bonded to a resin film base (thickness: 40 mu m) to prepare a support member D4 having a thickness of 50 mu m. The linear expansion coefficient was 60 ppm.
≪ Support member D5 >
A commercially available clean line tape TW-PLT (manufactured by Danimura) for a clean room was used as the support member D5. A resin film base material in which a polyvinyl chloride layer having a thickness of 75 占 퐉 and a polyethylene terephthalate layer having a thickness of 12 占 퐉 were laminated and had a total thickness of 142 占 퐉 and a coefficient of linear expansion of 80 ppm.
(Example 1)
The adhesive layer C1 formed on the release film A1 kept in the refrigerator was returned to room temperature, and the adhesive layer was adjusted to have a cut (infeed) depth of not more than 1/2 of the thickness of the release film, and a circular free- . Thereafter, unnecessary portions of the adhesive layer were removed, and the adhesive film B1 was laminated to the release film A1 at room temperature so that the pressure-sensitive adhesive layer was in contact with the adhesive layer. The adhesive film B1 was adjusted so as to have a cutting depth equal to or less than 1/2 of the thickness of the release film, and circular cut-off processing with a diameter of 370 mm was performed concentrically with the adhesive layer, and 300 sheets were wound with a tensile force of 20 N. Next, the adhesive layer on the release film A1 and the surface on which the adhesive film was provided were opposite to each other, and the supporting member D1 was bonded to both end portions in the short direction of the release film A1 to manufacture the wafer processing tape of Example 1. [
(Examples 2 to 7 and Comparative Examples 1 to 3)
The wafer processing tapes of Examples 2 to 7 and Comparative Examples 1 to 3 were produced in the same manner as in Example 1 with the combination of Table 1.
[Evaluation of inhibition of air intrusion and transfer marks]
The adhesive sheets of Examples and Comparative Examples were stored in a bag made of polyethylene, degassed, heat sealed, and side plates made of polypropylene were provided at both ends. Further, two PP bands were placed so as to be crossed and fused and bonded. Each gonocytoma was stored in a refrigerator (5 ° C) for one month, taken out from the refrigerator, stored in a packing box together with plate-shaped dry ice, loaded on a transport track, and transported from Hiratsuka to Akita As shown in FIG. Then, the rolls were returned to room temperature, and then the packaging bag was opened to unroll the rolls, and the air between the adhesive layer and the release film was visually inspected. And the presence of transcripts were observed. The results are shown in Table 2.
[Evaluation of inhibition of voids after mounting]
The adhesive sheets of Examples and Comparative Examples were stored in a bag made of polyethylene, degassed, heat sealed, and side plates made of polypropylene were provided at both ends. Further, two PP bands were placed so as to be crossed and fused and bonded. Each gonocytoma was stored in a refrigerator (5 ° C) for one month, taken out from the refrigerator, stored in a packing box together with plate-shaped dry ice, loaded on a transport track, and transported from Hiratsuka to Akita As shown in FIG. Thereafter, the film was further stored in a refrigerator (5 DEG C) for 3 months, and then the respective gonocytes were opened and the rolls were returned to room temperature. Then, the packaging bag was opened and mounting was performed on the semiconductor wafer. Thereafter, the presence or absence of voids (bubbles) on the bonding surface between the adhesive layer and the semiconductor wafer was confirmed by a microscope. The results are shown in Table 2. As the semiconductor wafer, a wafer having a size of 12 inches and a thickness of 50 탆 was used. Mounting conditions of the semiconductor wafer are as follows.
≪ Bonding condition &
Mounting apparatus: wafer mounter DAM-812M (made by Takatori)
Attachment speed meter: 50 mm / sec Mounting pressure: 0.1 MPa
Mounting temperature: 60 ° C, 90 ° C
As shown in Table 2, in the wafer processing tapes according to Examples 1 to 3, 7 and 8, the thickness of the support member is 0.58 times or more and 0.87 times or less the thickness of the adhesive layer, But was destroyed by the heat at the time of bonding. Further, no penetration of air was observed between the adhesive layer and the release film, and good results were obtained in evaluating inhibition of voids after mounting. Since the thickness of the supporting member according to Examples 5 and 6 is 0.92 times or more and less than 1.0 times the thickness of the adhesive layer, air intrusion and transfer marks between the adhesive layer and the release film are shown in part, And the result was good in evaluating the inhibition of the void after mounting. Since the thickness of the supporting member according to Example 4 was 0.46 times as thick as the thickness of the adhesive layer, a slightly strong transfer mark was seen, and when bonded to the semiconductor wafer at 60 캜, voids were partially observed, In the case of joining to a semiconductor wafer, voids did not occur, and the range was practically acceptable.
On the other hand, since the wafer processing tape according to Comparative Example 1 was not provided with the supporting member, the transfer mark remained intense and voids were formed in some cases even when the wafer was bonded to the semiconductor wafer at 90 占 폚. Since the thickness of the support member of the wafer processing tape according to Comparative Example 2 was thicker than the thickness of the adhesive layer, air penetration between the adhesive layer and the release film was observed and the adhesive layer was deformed. Voids were formed in some cases. Since the thickness of the support member is larger than the thickness of the adhesive layer, air penetration is observed between a part of the adhesive layer and the release film, and similarly, at 90 deg. C, Voids were formed in some cases.
10: Wafer processing tape
11: release film
12: adhesive layer
13: Adhesive film
13a: circular label portion
13b: peripheral portion
14, 14 ": supporting member
Claims (15)
An adhesive layer having a planar shape provided on the first surface of the release film,
An adhesive film having a label portion covering the adhesive layer and having a planar shape provided so as to contact the release film around the adhesive layer and a peripheral portion surrounding the outer side of the label portion;
And a support member provided on both sides of the release film in a short direction on the second surface opposite to the first surface provided with the adhesive layer and the adhesive film,
Wherein the support member has a thickness of 0.3 times or more and less than 1.0 times the thickness of the adhesive layer.
Wherein a coefficient of static friction between the base film and the supporting member is 0.2 to 2.0.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2014-246306 | 2014-12-04 | ||
| JP2014246306A JP6406999B2 (en) | 2014-12-04 | 2014-12-04 | Wafer processing tape |
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| KR20160067758A KR20160067758A (en) | 2016-06-14 |
| KR101847246B1 true KR101847246B1 (en) | 2018-04-09 |
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| KR1020150170629A KR101847246B1 (en) | 2014-12-04 | 2015-12-02 | Wafer processing tape |
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| JP (1) | JP6406999B2 (en) |
| KR (1) | KR101847246B1 (en) |
| CN (1) | CN105694743B (en) |
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| CN116209237B (en) * | 2022-12-29 | 2023-10-27 | 东莞市富颖电子材料有限公司 | Component dispensing paste and preparation process thereof |
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| JPH04360653A (en) | 1991-06-06 | 1992-12-14 | Tochigi Pref Gov | Production of egg highly containing polybasic unsaturated fatty acid of hemp seed |
| JP4360653B2 (en) * | 2007-09-14 | 2009-11-11 | 古河電気工業株式会社 | Wafer processing tape |
| JP2009224628A (en) * | 2008-03-18 | 2009-10-01 | Furukawa Electric Co Ltd:The | Tape for processing wafer |
| US9324592B2 (en) * | 2007-09-14 | 2016-04-26 | Furukawa Electric Co., Ltd. | Wafer processing tape |
| US20120263946A1 (en) * | 2009-11-13 | 2012-10-18 | Kazuyuki Mitsukura | Semiconductor device, method for manufacturing semiconductor device, and semiconductor wafer provided with adhesive layer |
| JP4991921B2 (en) * | 2010-09-06 | 2012-08-08 | 日東電工株式会社 | Film for semiconductor device and semiconductor device |
| JP4976532B2 (en) * | 2010-09-06 | 2012-07-18 | 日東電工株式会社 | Film for semiconductor devices |
| JP2012082285A (en) * | 2010-10-08 | 2012-04-26 | Hitachi Chemical Co Ltd | Adhesive sheet |
| JP5957795B2 (en) * | 2011-02-07 | 2016-07-27 | 日立化成株式会社 | Adhesive sheet roll and semiconductor device |
| JP5733049B2 (en) * | 2011-06-23 | 2015-06-10 | 日立化成株式会社 | Adhesive sheet, adhesive sheet manufacturing method, adhesive sheet roll, semiconductor device manufacturing method, and semiconductor device |
| JP5889026B2 (en) * | 2012-02-10 | 2016-03-22 | 古河電気工業株式会社 | Wafer processing tape |
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| CN105694743B (en) | 2019-03-15 |
| JP6406999B2 (en) | 2018-10-17 |
| CN105694743A (en) | 2016-06-22 |
| JP2016111155A (en) | 2016-06-20 |
| KR20160067758A (en) | 2016-06-14 |
| TW201633386A (en) | 2016-09-16 |
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