KR101753879B1 - 유기 발광 표시 소자 - Google Patents
유기 발광 표시 소자 Download PDFInfo
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- KR101753879B1 KR101753879B1 KR1020130119154A KR20130119154A KR101753879B1 KR 101753879 B1 KR101753879 B1 KR 101753879B1 KR 1020130119154 A KR1020130119154 A KR 1020130119154A KR 20130119154 A KR20130119154 A KR 20130119154A KR 101753879 B1 KR101753879 B1 KR 101753879B1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
Description
도 2는 본 발명의 다른 실시예에 따른 유기발광소자용 패널에서의 반사방지층의 단면도를 간략히 나타낸 것이다.
MR | HR | LR | ||
입자 in MIBK(20%) | ZrO2 | 4 (고형분 함량 0.8) |
7 (고형분 함량 1.4) |
|
SiO2 | 6 (고형분 함량 1.2) |
|||
PETA | 1.1 | 0.5 | 1 | |
Irgacure 184 | 0.1 | 0.1 | 0.2 | |
MIBK | 20 | 60 | 50 | |
PGME | 14.8 | 32.4 | 22.8 | |
총 합계(g) | 40 | 100 | 80 | |
s.c.(%) | 5 | 2 | 3 |
반사율 (%) | 투과율(%) | 헤이즈(%) | ||
실시예 1 | UV조사전 | 0.4 | 97 | 0.3 |
UV조사후 | 0.4 | 45 | 0.3 | |
비교예 1 | UV조사전 | 0.3 | 97 | 0.3 |
UV조사후 | 0.3 | 97 | 0.3 |
2: 광변색 하드층
3: 중굴절층
4: 고굴절층
5: 저굴절층
Claims (11)
- 기판;
상기 기판 상에 형성되는 제1전극;
상기 제1전극 상에 형성되는 광을 발생하기 위한 유기발광층;
상기 유기발광층 상에 형성되는 광의 일부를 반사 및 투과시키기 위한 제2전극; 및
상기 제2전극 상에 형성되는 외부 보호 필름;을 구비하며,
상기 외부 보호 필름은 투명기재 상에 차례로 적층되어 형성된 광변색 하드층 및 반사방지층을 포함하며,
상기 광변색 하드층은 다관능성 아크릴레이트계 모노머 100 중량부에 대하여, 광변색 염료 0.5 내지 10 중량부 및 광개시제 1 내지 10 중량부를 포함하는 하드코팅액 조성물을 이용하여 1~8 ㎛의 두께로 형성되고,
상기 반사방지층은 굴절율 1.60 내지 2.50의 고굴절층 및 굴절율 1.25 내지 1.42의 저굴절층이 순차적으로 적층된 구조를 포함하고,
상기 고굴절층은 10nm 내지 30nm의 두께로 형성되고, 상기 저굴절층은 110nm 내지 200nm의 두께로 형성되는,
유기 발광 소자.
- 제1항에 있어서,
상기 외부 보호 필름은 광변색 하드층 및 굴절율 1.60 내지 2.50의 고굴절층 사이에 굴절율 1.55 내지 1.75의 중굴절층을 더 포함하는,
유기 발광 소자.
- 제1항에 있어서,
상기 저굴절층은 아크릴레이트 가교 중합체의 바인더 100 중량부를 기준으로 중공입자 100 내지 300 중량부가 포함된 조성물의 경화를 통해 형성되는 유기 발광 소자.
- 제3항에 있어서,
상기 중공 입자는 수 평균 입경이 5 내지 80nm이며, MgF2, SiO2, ZrO2, SnO2 및 Ga2O3로 이루어진 군에서 선택된 1종 이상인 유기 발광 소자.
- 제1항에 있어서,
상기 고굴절층은 아크릴레이트 가교 중합체의 바인더 100 중량부를 기준으로 무기 미립자 70 내지 700 중량부가 포함된 조성물의 경화를 통해 형성되는 유기 발광 소자.
- 제2항에 있어서,
상기 중굴절층은 아크릴레이트 가교 중합체의 바인더 100 중량부를 기준으로 무기 미립자 70 내지 700 중량부가 포함된 조성물의 경화를 통해 형성되는 유기 발광 소자.
- 제5항 또는 제6항에 있어서,
상기 무기 미립자는 1nm 내지 40nm의 평균입경을 가지는 ZrO2, ZnO, CeO2, TiO2, SnO2, Sb2O3, ATO(Antimony doped SnO2), AZO(Antimony doped ZnO), ITO, GZO(Gallium doped ZnO) 및 PTO로 이루어진 군에서 선택된 1종 이상인, 유기 발광 소자.
- 삭제
- 제2항에 있어서,
상기 중굴절층은 100nm 내지 200nm 의 두께로 형성되는 유기 발광 소자.
- 제1항에 있어서,
상기 광변색 하드층은 UV 경화에 의해 투과율이 적어도 20% 이상 낮아지는, 유기발광 소자.
- 제1항에 있어서,
상기 반사방지층은 반사율이 2% 이하인, 유기발광 소자.
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