KR101684943B1 - Light Emitting Device - Google Patents

Abstract

The light emitting device according to the embodiment improves the brightness by preventing the light emitted from the light emitting chip from being absorbed by the Zener diode mounted on the body by using the light blocking material.

Description

[0001] Light Emitting Device [0002]

The present invention relates to a light emitting device, and more particularly, to a light emitting device that minimizes a decrease in luminance caused by a zener diode.

Light Emitting Diode (LED) is a semiconductor device that converts electrical energy into light. It has lower heat generation, longer life, faster response characteristics, and lower power consumption than conventional light sources such as incandescent lamps, fluorescent lamps, halogen lamps, Stability, and environmental friendliness. A light emitting diode uses a semiconductor in the form of a chip, unlike a conventional light source using heat or discharge. A chip having a significantly smaller size than a conventional light source and a light emitting diode composed of a package body are susceptible to ESD shock. In order to reduce the ESD impact of the LED, an ESD element such as a Zener diode is mounted on the body and used have. However, since an ESD device such as a zener diode is located close to the light emitting diode, it absorbs a part of the light emitted from the light emitting diode and lowers the luminous intensity of the light emitting device.

Embodiments provide a light emitting device that minimizes light absorption of an ESD device.

The light emitting device according to the embodiment includes a body having a groove formed on a bottom surface thereof, an ESD element disposed in the groove, and a light blocking material covering the groove and blocking light absorption by the ESD element.

The light emitting device according to the embodiment can be applied to a back light unit (BLU) and a lighting device.

Here, the light blocking material is formed of any one of high density SiO 2 and TiO 2, and minimizes light absorption of the ESD device.

The light emitting device according to the embodiment minimizes the optical loss due to the ESD element.

1 is a sectional view of a light emitting device according to a first embodiment of the present invention,
2 is a schematic sectional view of a light emitting device according to a second embodiment,
3 is a perspective view of the light emitting device according to the first embodiment,
FIG. 4 is a perspective view of a light emitting device according to a second embodiment of the present invention,
5 is a schematic illustration of a cross-sectional view of one embodiment of a cavity surface applied to the first and second embodiments,
6 to 8 are conceptual diagrams of a method of filling a sealing material in a light emitting device according to the first embodiment and the second embodiment,
9 is a reference drawing for an example of applying a reflective tape as a light blocking material,
10 is a reference drawing of an example in which the light emitting device according to the present embodiment is applied to a BLU (Back Light Unit)
11 is a perspective view of a second embodiment of a backlight unit constructed by arraying light emitting devices according to an embodiment, and FIG.
12 shows a reference diagram of an example in which the light emitting device according to the present embodiment is applied to a lighting apparatus.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on", "under", or "on" Quot; on ", " under ", " upper ", and lower " lower " directly "or" indirectly "through " another layer, or structure ". Further, the description of the positional relationship between the respective layers or structures is referred to the present specification or the drawings attached hereto.

In the drawings, the thickness or the size of each layer or each structure is exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each structure shown in the drawings does not entirely reflect the actual size.

Hereinafter, embodiments will be described in detail with reference to the drawings.

Fig. 1 schematically shows a cross-sectional view of a light emitting device according to the first embodiment.

Referring to FIG. 1, the light emitting device according to the first embodiment includes a first electrode 51, a second electrode 52, a light emitting chip 53 mounted on the first electrode 51, (54), and a zener diode (55) mounted on the buried groove (54). The body has a cavity (56).

The buried grooves 54 are formed in one area of the bottom surface 58 and are formed deeper than the thickness d1 of the zener diodes 54 so that the zener diodes 55 are not exposed above the bottom surface 58. [

After the zener diodes 55 are mounted in the buried grooves 54, the buried grooves 54 are filled with the light blocking material. The light blocking material filled in the buried groove 54 blocks light absorption by the Zener diode 55 and reflects the light emitted from the light emitting chip 53 to the outside.

The light blocking material prevents the surface of the Zener diode 55 serving as a black body from being exposed to the cavity 56 and allows the buried groove 54 to have a white, milky white, silver gold, Lt; / RTI >

The light shielding material may be formed by mixing SiO2 and TiO2 with an epoxy resin, a silicone resin or other synthetic resin. The light blocking material is formed to have a viscosity of 200 to 10,000 mps to fill the buried grooves 54. The light blocking material blocks the reflected light A1 due to the dispersing agent or the fluorescent material filled in the cavity 56 from being absorbed by the Zener diode 55 after the light blocking material is filled in the buried groove 54, And is directed outward from the cavity 56 through the path A2.

The zener diode 55 is not exposed to the outside by the light blocking material and does not act as a black body. Further, since the Zener diode 55 is embedded in the bottom of the bottom surface 58, the light emitted from the light emitting chip 53 is not interfered with.

At this time, the light blocking material may be filled in a hemispherical shape that is horizontal with the bottom surface 58, or gently curved downward from the bottom surface 58.

2 schematically shows a cross-sectional view of a light emitting device according to a second embodiment.

2, the light emitting device includes a first electrode 61, a second electrode 62, a cavity 66 formed in the body, a light emitting chip 63, a zener diode 65, and a light blocking material 64, . A light emitting chip 63 is mounted on the bottom surface 68 located on the upper side of the first electrode 61 and a zener diode 65 is mounted on the bottom surface 68 located on the upper side of the second electrode 62, do. In the second embodiment, when the zener diodes 65 are mounted on the floor surface, no additional machining is required for the bottom surface 68. The Zener diode 65 is mounted on the bottom surface 68 located on the side of the second electrode 62 and then the Zener diode 65 is coated with a light blocking material 64 to form a hemisphere Shape.

The light blocking material 64 may include one of SiO2, and TiO2, or SiO2, and TiO2 in a mixed state. The content ratio of SiO2 or TiO2 contained in the light blocking material 64 is distributed in a proportion of 3% or more with respect to the synthetic resin. For example, the ratio of SiO2 (TiO2, or SiO2 and TiO2) to epoxy resin may be mixed at a ratio (may be a mass ratio or a volume ratio) such as 5:95, 10:90, and 20:80, The viscosity of the light blocking material 64 is preferably 200 to 100,000 mps.

In the second embodiment, the light blocking material 64 is formed so as to prevent the light directed from the light emitting chip 63 to the Zener diode 65 from being absorbed into the Zener diode 65 while sealing the Zener diode 65 from being exposed to the outside. Should be reflected.

3 shows an example of a perspective view of the light emitting device according to the first embodiment viewed from above.

3, the light emitting chip 53 is mounted on the bottom surface 58 of the body 50, and the zener diodes 55 are embedded in the bottom surface 58 of the body 50. A buried groove 54 is formed in the bottom surface 58 of the body 50 and a zener diode 55 is buried in the buried groove 54. After the Zener diodes 55 are buried in the buried grooves 54, the buried grooves 54 are filled with the light blocking material. The light blocking material 54 is configured to reflect the light applied from the light emitting chip 53 by increasing the content of SiO2 or TiO2 by mixing SiO2 or TiO2 with a synthetic resin such as an epoxy resin or a silicone resin. For example, SiO2 and TiO2 may be used as a dispersing agent for dispersing light emitted from the light emitting chip 53 when filled in the cavity 56 at a low concentration of 0.5% to 3% in the synthetic resin In this embodiment, the ratio of SiO2 or TiO2 is increased to 5% or more, preferably 10% or more, and the light blocking agent is used instead of dispersing light. When the ratio of SiO2 or TiO2 is increased to 20% or more, epoxy or silicon containing SiO2 or TiO2 is an opaque material but has a color close to white so that its use differs from ordinary SiO2 and TiO2 used as a dispersing agent. In this embodiment, the light blocking material filling the buried grooves 54 reflects the light incident from the light emitting chip 53 to the outside and isolates the zener diodes 55 from absorbing the incident light.

A first electrode (not shown) for mounting the light emitting chip 53 and a second electrode (not shown) for mounting the Zener diode 55 may be embedded in the bottom surface 58. However, Since the light emitting chip 53 and the Zener diode 55 may be connected to the power source by using a wire instead of the two electrodes, the electrode structure is not mentioned separately. 3 shows that the light emitting device according to the first embodiment is a side view type light emitting device. However, the light emitting device according to the first embodiment has a top view (top view) instead of a side view type view type, but the present invention is not limited thereto.

The depth h2 of the buried groove 54 in which the zener diodes 55 are buried is formed deeper than the thickness h1 of the zener diodes 55. [ In the figure, the depth h2 of the buried grooves 54 shows that the zener diodes 55 are sufficiently buried, and the buried grooves 54 are formed at a level enough to apply the light shielding material. This ensures that the Zener diode 55 is not exposed on the bottom surface 58 and that the light directed toward the Zener diode 55 does not reach the Zener diode 55.

At this time, the light blocking material filled in the buried grooves 54 may be in parallel with the surface of the bottom surface 58, or may have a hemispherical shape in which the bottom surface 58 is depressed with a curvature.

FIG. 4 shows an example of a perspective view of the light emitting device according to the second embodiment viewed from above.

4, the light emitting device according to the second embodiment includes a cavity 66 formed in the body 60, a light emitting chip 63 mounted on the bottom surface 68 of the body 60, And a zener diode 65 protruding from the first electrode 68. Here, the Zener diode 65 is sealed by the light blocking material 64.

In Fig. 4, a zener diode 65 protrudes from the bottom surface 68. The light blocking material 64 seals the Zener diode 65 in a state where the Zener diode 65 protrudes from the bottom surface 68 and the sealing material 64 is sealed in the cavity 66 after the light blocking material 64 is sealed. Hour). The encapsulant may include a phosphor or may include a dispersant for optical dispersion.

The encapsulant may include a single phosphor or may include two or more phosphors depending on the wavelength of light emitted from the light emitting chip 63. Alternatively, an encapsulant containing a fluorescent material and an encapsulant not containing a fluorescent material may be filled in the cavity 66 as a layer. This will be described in detail later.

The light emitting device according to the second embodiment does not require special processing for the bottom surface 68 because the zener diodes 65 protrude from the bottom surface 68. The light emitting device of the second embodiment does not need to sink a region of the bottom surface 68 when the body 60 is ejected and mounts the Zener diode 65 on the floor surface 68 as it is, Is mounted on the bottom surface 68. The light shielding material 64 may be applied on the bottom surface 68. [

The light shielding material 64 is applied to the Zener diode 65 and then spreads gently at the bottom surface 68 by gravity to form a hemispherical shape and the hemispherical surface is emitted from the neighboring light emitting chip 63, It is preferable to reflect the light incident in the direction of the diode 65 toward the outside of the cavity 66.

5 schematically shows a cross-sectional view of one embodiment of a cavity ramp applied to the first embodiment and the second embodiment.

5, the light emitting device includes a cavity 101 formed in the body, a first electrode 103 formed by the cavity 101, and a pair of cavity inclined surfaces (for example, A light emitting chip 102 mounted on the first electrode 103, a buried trench 105a formed on the second electrode 104 and a zener diode 105 mounted on the buried trench 105a. .

The present embodiment is useful for improving the concentration of light emitted from the light emitting chip 102 by using the first cavity slope B1 and the second cavity slope B2 having steps. The cavity inclined surface 101a includes a first cavity inclined surface B1 and a second cavity inclined surface B2 which are formed in a multilayer structure. The cavity inclined surface 101b also includes a pair of cavity inclined surfaces B4 and B5, .

The first cavity slope B1 contacts the surface of the second electrode 104 and determines the irradiation angle of the light emitted from the light emitting chip 102. [ At this time, the first cavity inclined surface B1 performs a function similar to that of the reflector. The second cavity slope B2 is connected to the first cavity slope B1 by a step difference, and extends the length of the first cavity slope B1. At this time, as the lengths of the first cavity inclined surface B1 and the second cavity inclined surface B2 become longer, the concentration of light emitted from the light emitting chip 102 is improved. 5, the first cavity sloping surface B1 and the second cavity sloping surface B2 have the same inclination angle, but the first cavity sloping surface B1 and the second cavity sloping surface B2 form the second electrode 104 ) May be different from each other.

The first cavity inclined surface B1 and the second cavity inclined surface B2 are formed by injection molding with a step when the body of the light emitting device is injection molded. In one region of the first electrode 103, 103a may be formed.

The heat dissipation port 103a radiates the heat emitted from the light emitting chip 102 to the lower end of the light emitting chip 102 to improve the heat dissipation characteristics of the light emitting chip 102. [ 5, it is preferable that the heat dissipation hole 103a is formed in a region where the light emitting chip 102 and the first electrode 103 are in contact with each other.

A protective cap 100a may be further formed between the first electrode 103 and the second electrode 104 to prevent foreign matter from penetrating into the electrode. The first electrode 103 and the second electrode 104 provide a positive voltage and a negative voltage to the light emitting diode 102 so that the first electrode 103 and the second electrode 104 are electrically separated from each other and can penetrate foreign matter. The protective cap 100a may be formed of a resin material such as silicon and epoxy to prevent foreign matter from penetrating between the first electrode 103 and the second electrode 104. [

5, the buried trench 105a is formed on the side of the second electrode 104, the Zener diode 105 is mounted on the buried trench 105a, and the Zener diode 105 is mounted on the buried trench 105a. The light blocking material is embedded in the light shielding layer 105a. However, the Zener diode 105 may be mounted on the surface of the second electrode 104, and the Zener diode 105 may be coated with a light shielding material. However, the present invention is not limited thereto. The first electrode 103 and the second electrode 104 are formed on the surface of the first cavity slope B1 and the second cavity slope B2, And the second electrode 104 may be formed on the bottom surface of the body when they are connected to the external power source by a conductive wire.

Therefore, FIG. 5 is, of course, referred to throughout this specification as being formed (or mounted) on the bottom surface as well as formed on the bottom surface of the body as well as being formed on the surface of the electrode. In addition, the bottom surface and the first electrode 103 and the second electrode 104 are separately shown and described as a bottom surface, not shown or described.

6 to 8 show a conceptual diagram of a method of filling the encapsulant in the light emitting device according to the first embodiment and the second embodiment.

Referring to FIG. 6, a Zener diode 206 and a light emitting chip 204 are mounted on a bottom surface of the Zener diode 206, and a light blocking material 207 ) Is applied. The first encapsulant 203 and the second encapsulant 202 are sequentially applied to the cavity 201 to fill the cavity 201 in a state in which the light barrier material 207 is applied.

In this case, the first encapsulant 203 filling the cavity 201 includes a phosphor, and the second encapsulant 202 is formed of a transparent (or semitransparent) epoxy or silicon containing no phosphor. Light emitted from the light emitting chip 204 is diffused throughout the cavity 201. At this time, the light emitted from the light emitting chip 204 is not absorbed by the hemispherical shape of the light blocking material 207, reflected by the surface of the light blocking material 207, and finally emitted to the outside through the cavity 201.

7, a Zener diode 216 and a light emitting chip 214 are mounted on a bottom surface, a Zener diode 216 is coated with a light blocking material 217, A first encapsulant 213 containing a fluorescent material (or a diffusion material) and a second encapsulant 212 containing a fluorescent material are sequentially filled.

The first encapsulant is formed of a transparent (or translucent) material including a dispersing agent (or a diffusing agent) so that light emitted from the light emitting chip 214 is sufficiently diffused in the cavity 211, and in this state, White is excited by the sealing material 212.

Since the light emitted from the light emitting chip 214 is not absorbed by the light blocking material 217, the light is reflected by the hemispherical outer surface of the light blocking material 217, reflected by the cavity surface again, do.

Here, the phosphor included in the second encapsulant 212 is determined according to the wavelength of the light emitted from the light emitting chip 214. When the light emitted from the light emitting chip 214 is blue, the second encapsulant 212 includes a yellow phosphor. When the light emitted from the light emitting chip 214 is green, the second encapsulant 212 A red phosphor, and a blue phosphor may be included together.

6 and 7 illustrate that Zener diodes 206 and 216 are mounted on the bottom surface, and the Zener diodes 206 and 216 are coated with a light blocking material. However, it is needless to say that it is also possible to prevent the zener diodes from being exposed on the bottom surface by mounting the zener diodes by forming buried grooves on the bottom surface. Refer to Fig. 1 for a method of mounting the zener diodes using buried grooves.

8, the light emitting chip 234 is mounted on the bottom surface (the surface of the first electrode 233 or the second electrode 235, not shown), and the light emitting chip 234 is mounted on one side of the bottom surface A zener diode 237 is mounted on the buried groove 236 so that the zener diode 237 is not exposed on the bottom surface.

The buried grooves 236 are formed at the same height as the zener diode 237 or deeper than the zener diodes 237. After the zener diodes 237 are mounted in the buried grooves 236, So that the diode 237 can not absorb the light emitted to the cavity 232. After the light blocking material is applied to the buried grooves 236, the cavity 232 is filled with a transparent (or semitransparent) sealing material. At this time, the sealing material may further include a diffusion material so that the light emitted from the light emitting chip 234 can be uniformly diffused into the cavity 232.

After the encapsulation material is filled, a PLL (Photo Luminescent Film) 238, which is a resin material containing a fluorescent material, is provided on the upper side of the cavity 232. A PLL (Photo Luminescent Film) 238 includes a phosphor excited by light emitted from the light emitting chip 234 to emit white light. If the light emitting chip 234 emits blue light, the PLF 238 may include a yellow phosphor and the PLF 238 including a yellow phosphor may be excited with blue light to form white light .

When the light emitted from the light emitting chip 234 is R, G color, or UV, the PLF 238 may be formed in a multilayer structure. For example, when the light emitting chip 234 emits red light (R), the PLF 238 may be formed of a single film that includes both blue and green excited phosphors, May be laminated and formed.

On the other hand, a heat dissipation port 239 is formed at the lower end of the light emitting chip 234 to dissipate the heat generated from the light emitting chip 234 to the outside.

In the foregoing, embodiments of the light blocking material in the form of being buried in buried grooves or applied to zener diodes mounted on the bottom surface have been described. Hereinafter, a tape-like light blocking material will be described with reference to FIG.

9, a light emitting device includes a light emitting chip 253 and a zener diode 255. A buried groove 254 is formed in one area of the bottom surface 258, The diode 255 is mounted.

A reflective tape 257 is attached to the upper side of the buried groove 254 and the zener diode 255 is isolated from the buried groove 254 by the reflective tape 257. The reflective tape 257 preferably has a surface material having a high reflectance. However, the reflective tape 257 does not necessarily have a high reflectance of the surface material but may be formed of an opaque material having little white, milky white, or other light absorption. At this time, an adhesive may be applied to the area where the reflective tape 257 and the body are in contact with each other so that the reflective tape 257 is attached to the buried groove 254, or a reflective tape having an adhesive force may be attached to the upper side of the buried groove 254 .

A heat dissipation port 259 is formed at the lower end of the light emitting chip 253 to dissipate heat generated in the light emitting chip 253 and a sealing material containing a fluorescent material is filled in the cavity 256, The color temperature and the color temperature of the liquid crystal display device may be changed.

On the other hand, the above-described light emitting chip can be applied to a back light unit (BLU) or a lighting apparatus.

The backlight unit is arrayed on a PCB substrate and used as a light source of a display device such as a TV and a monitor.

10 is a perspective view illustrating a backlight unit according to a first embodiment of the present invention, in which the light emitting devices according to the embodiment are arranged in an array.

10, the backlight unit includes a lower receiving member 300, a light emitting device module 310 for emitting light, a light guide plate 320 disposed adjacent to the light emitting device module 310, and a plurality of optical sheets (not shown) . ≪ / RTI > A plurality of optical sheets (not shown) may be placed on the light guide plate 320.

In the light emitting device module 310, a plurality of light emitting devices 314 may be mounted on the printed circuit board 312 to form an array. As the printed circuit board 312, MCPCB (Metal Core PCB) or FR4 PCB may be used, and various kinds of PCBs may be applied. In addition, the printed circuit board 312 can be manufactured in various shapes according to the structure of the backlight assembly as well as the rectangular plate shape.

The light guide plate 320 changes the light output from the light emitting element 314 into a planar light source to provide the light to the liquid crystal display panel (not shown), uniformizes the luminance distribution of the light provided from the light guide plate 320, And a reflective sheet (not shown) for reflecting the light emitted to the rear of the light guide plate 320 by the light guide plate 320 may be positioned on the back surface of the light guide plate 320.

11 shows a perspective view of a second embodiment of a backlight unit constructed by arranging the light emitting elements according to the embodiment in an array.

11, the backlight unit may include a lower receiving member 450, a reflection plate 420, a plurality of light emitting device modules 440, and a plurality of optical sheets 430 have.

At this time, the light emitting element module 440 may be mounted on the printed circuit board 442 such that a plurality of light emitting elements 444 are arrayed easily.

On the other hand, when a plurality of projections and the like are formed on the bottom surface of the light emitting element 444 and the light emitting elements 444 are formed of those emitting light of R, G, B colors to form white light, The color mixing effect of light and blue light may be improved. Of course, even when the light emitting element 444 emits only white light, the white light can be uniformly emitted and emitted by the projections on the bottom surface.

The reflector 420 can reduce light loss by using a plate having a high light reflectivity. The optical sheet 430 may include at least one of a brightness enhancement sheet 432, a prism sheet 434, and a diffusion sheet 436.

The diffusion sheet 436 directs the light incident from the light emitting element 440 toward the front of the liquid crystal display panel (not shown), diffuses the light so as to have a uniform distribution over a wide range, You can investigate. The prism sheet 434 serves to vertically emit light obliquely incident on the prism sheet 434. That is, at least one prism sheet 434 may be disposed below the liquid crystal display panel (not shown) to vertically convert the light emitted from the diffusion sheet 436. The brightness enhancement sheet 432 transmits light parallel to its transmission axis and reflects light perpendicular to the transmission axis.

Further, the light emitting device according to this embodiment can be applied to a lighting apparatus.

An example in which the light emitting device according to this embodiment is applied to the illumination device will be described with reference to FIG.

12, the lighting apparatus 500 is composed of light emitting devices 501a to 501n arranged on one side of a light bulb 502 and a light bulb 502. Although not shown in the figure, each light emitting device 501a To 501n are provided. Since the light emitting device according to the present embodiment has no light absorbed by an ESD device such as a zener diode as compared with a normal light emitting device, an output of a higher light amount can be expected.

Fig. 12 illustrates a fluorescent lamp type light bulb. However, the light emitting device according to the present exemplary embodiment is not limited to the general bulb type, FPL type, fluorescent lamp type, halogen lamp type, metal lamp type, and various other types and socket standards.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

51: first electrode 52: second electrode
53: light emitting chip 54: buried groove
55: zener diode 56: cavity
58: bottom surface

Claims (13)

A body having a first electrode and a second electrode disposed at a lower portion thereof and a groove formed at a side of the second electrode;
An ESD element disposed in the groove;
A light emitting chip mounted on the first electrode;
A light blocking material covering the groove and blocking light absorption by the ESD element; And
And a protective cap (100a) formed between the first electrode and the second electrode (104). The method according to claim 1,
The light-
SiO2, and TiO2. 3. The method of claim 2,
The light-
And is filled with a viscosity of 200 to 10,000 mps. The method according to claim 1,
And a cavity formed in the body,
The cavity is filled with a sealing material for sealing the light blocking material
Wherein a film containing a fluorescent material is disposed on an upper side of the cavity filled with the sealing material. 5. The method of claim 4,
In the sealing material,
A first encapsulant including a phosphor; And
And a second encapsulant containing no phosphor. 6. The method of claim 5,
The first encapsulation material may be a non-
Wherein the light emitting device comprises different kinds of fluorescent materials. The method according to claim 6,
The first encapsulation material may be a non-
And at least one of phosphors corresponding to R, G, and B colors. The method according to claim 1,
The groove
Wherein a depth of the ESD element is set such that the ESD element is disposed below the upper surface of the bottom surface of the body. The method according to claim 1,
The light-
And the light emitting element is parallel to the upper surface of the bottom surface of the body. The method according to claim 1,
The light-
Wherein the light emitting device is formed with a curvature at an upper surface of a bottom surface of the body. The method according to claim 1,
The light-
And a reflective tape attached to one side of the groove and the bottom surface of the groove. A backlight unit (BLU) including the light emitting device according to any one of claims 1 to 11. A lighting device comprising the light emitting element according to any one of claims 1 to 11.

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