KR101618469B1 - Lensless led package comprisng a rare earth metal oxide particles - Google Patents
Lensless led package comprisng a rare earth metal oxide particles Download PDFInfo
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- KR101618469B1 KR101618469B1 KR1020140187670A KR20140187670A KR101618469B1 KR 101618469 B1 KR101618469 B1 KR 101618469B1 KR 1020140187670 A KR1020140187670 A KR 1020140187670A KR 20140187670 A KR20140187670 A KR 20140187670A KR 101618469 B1 KR101618469 B1 KR 101618469B1
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- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
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- 238000002360 preparation method Methods 0.000 description 1
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- WUVRZBFIXJWTGS-UHFFFAOYSA-N yttrium(3+);trinitrate;hydrate Chemical compound O.[Y+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O WUVRZBFIXJWTGS-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
본 발명은 희토류 금속 산화물 입자를 포함하는 렌즈가 필요없는 LED 패키지에 관한 것이다.The present invention relates to an LED package that does not require a lens containing rare earth metal oxide particles.
일반적으로, 조명등은 설치되는 장소에 따라 가로등, 터널등, 횡단 보도등, 보안등 기타 여러 가지로 구분되며, 각 장소에서의 조명 용도에 따라 적절한 배광 분포를 갖도록 설치되는 것이 필요하다. 예를 들어, 도로의 중앙 차선에 설치되는 가로등은, 양쪽 차선의 모든 노면을 일정 수준 이상의 밝기로 비추기 위해, 조명등의 광원으로부터 출사된 광이 하향 분산되도록 설치되어야 하고, 또한, 차도와 인도가 접하는 도로 근방에 설치되는 가로등은, 차도에는 빛을 밝게, 인도에는 상대적으로 빛을 어둡게 비추기 위해, 광원으로부터 출사된 광이 인도 방향으로 덜향하도록 외부 반사판에 의해 일방으로만 하향 분산되도록 설치되어야 한다.Generally, the lighting lamps are classified into various kinds such as street lamps, tunnels, crosswalk, security, and the like depending on the installed place, and it is necessary to be provided so as to have an appropriate light distribution according to the lighting use in each place. For example, a streetlight installed in the center lane of a road must be installed so that light emitted from a light source such as an illuminating light is dispersed downward so as to illuminate all the road surfaces of both lanes with a brightness of a certain level or more. The streetlight installed near the road should be installed so that the light emitted from the light source is directed downward in the direction of delivery in order to illuminate the light relatively brightly on the roadway and relatively light on the roadway.
에너지 절감의 세계화 추세와 화합물 반도체의 비약적인 기술 발전에 따른 응용 제품 고급화는 LED(Lighting Emitting Diode : 반도체 p-n 접합소자로써 전기에너지를 빛에너지로 변환하는 발광 소자)가 조명등의 용도로 널리 사용되도록 개발되고 있는 실정이지만, 상술한 바와 같은 조명등 용도에 따른 배광분포를 갖도록 하는데에는 아직 기술적으로 미흡한 점이 많다.Due to the globalization trend of energy saving and application of advanced technology of compound semiconductors, LED (Lighting Emitting Diode: a light emitting device that converts electrical energy into light energy as a semiconductor pn junction device) is developed to be widely used for lighting purposes However, there are many technical deficiencies in achieving the light distribution distribution according to the illumination application as described above.
즉, LED PKG 종류, 구조에 따라 지향각이 상이하나 일반적인 LED PKG의 지향각은 약 120도인데, 최종 제품에 따라서 요구되어지는 지향각의 요구를 맞추기 어려운 것이다.In other words, although the orientation angle is different depending on the type and structure of the LED PKG, the orientation angle of a typical LED PKG is about 120 degrees, which is difficult to meet the requirement of the orientation angle required according to the final product.
이를 해결하기 위한 종래의 기술은, LED PKG에 렌즈(Lens)와 같은 2차 광학계를 설치하는 것으로서, 렌즈를 사용하여, 지향각을 줄이거나 넓히는 것이다. 종래 기술에 대한 예시로, 하기 특허문헌 1 내지 2와 같은 것을 들 수 있고, 이로써, 특허문헌 1 내지 2의 내용 전부는 본 명세서 상의 배경기술로서 인용된다.A conventional technique for solving this is to provide a secondary optical system such as a lens in the LED PKG, and use a lens to reduce or broaden the directivity angle. As examples of the prior art, there can be mentioned the following
특허문헌 1은, 마이크로렌즈 어레이가 형성되어 LED 광의 방사각을 넓히고 광 세기를 균일하게 하는 LED용 렌즈에 관한 것을 개시하고 있다.Patent Document 1 discloses a lens for an LED in which a microlens array is formed to widen the emission angle of LED light and to make the light intensity uniform.
특허문헌 2는, 빛의 집광 및 반사율을 높여 조도를 향상시키고, 빛 방사각도를 조절해 줄 수 있는 조도 개선 및 빛 방사각도 조절 기능을 갖는 LED 렌즈에 관하여 개시하고 있다.
그러나, 종래 기술과 같이 렌즈와 같은 2차 광학계를 사용하게 되면, 모듈의 두께 및 크기 증가를 피할 수 없어 BLU(Back Light Unit) 등과 같은 내부 실장 용도에 큰 제약이 될 수 있을 뿐 아니라, 렌즈 통과로 인한 휘도 감소 등의 또 다른 문제가 발생하는 난점이 있다.However, if a secondary optical system such as a lens is used as in the prior art, increase in the thickness and size of the module can not be avoided, which can be a great limitation on the internal mounting application such as BLU (Back Light Unit) There is a problem that another problem such as a reduction in luminance due to the light emission occurs.
본 발명은 렌즈와 같은 2차 광원계의 구비없이도, 광 지향각을 조절할 수 있을 뿐 아니라 광원 소실도 없는 LED 패키지를 제공하고자 한다.An object of the present invention is to provide an LED package capable of adjusting a light directing angle and also eliminating a light source without providing a secondary light source such as a lens.
본 발명은 상술한 종래 기술의 문제점을 해결하기 위해 안출된 것으로서,
LED 칩; 및
고분자 수지 내에 하기 화학식 1로 표현되는 화합물을, 전체 봉지재 중량 대비 30 중량% 이하로 포함하는 LED 봉지재를 구비하는 LED 패키지.
[화학식 1]
Ma(OH)b(CO3)cOd
여기서, M은 Sc, Y, La, Al, Lu, Ga, Zn, V, Zr, Ca, Sr, Ba, Sn, Mn, Bi 또는 Ac이고,
a는 1 또는 2, b는 0 내지 2, c는 0 내지 3, d는 0 내지 3이다.
다만, b 및 c는 동시에 0이 아니다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art,
LED chip; And
1. An LED package comprising an LED encapsulant containing a compound represented by the following formula (1) in a polymer resin in an amount of 30 wt% or less based on the total encapsulating material weight.
[Chemical Formula 1]
M a (OH) b (CO 3 ) c O d
Wherein M is at least one element selected from Sc, Y, La, Al, Lu, Ga, Zn, V, Zr, Ca, Sr, Ba, Sn,
a is 1 or 2, b is 0 to 2, c is 0 to 3, and d is 0 to 3.
However, b and c are not 0 at the same time.
본 발명은, 별도의 렌즈가 없이도 광 지향각 조절이 가능한 효과가 있다.The present invention has an effect that the light directing angle can be adjusted without a separate lens.
도 1은, 본 발명의 LED 패키지를 나타낸 단면도이다.
도 2는, 본 발명의 실시예에 따른 광지향각을 나타낸 것이다.1 is a cross-sectional view showing an LED package of the present invention.
2 shows the light directing angle according to the embodiment of the present invention.
이하, 본 발명에 대하여 상세히 설명한다.
Hereinafter, the present invention will be described in detail.
본 발명은, According to the present invention,
LED 칩; 및LED chip; And
고분자 수지 내에 하기 화학식 1로 표현되는 화합물을, 전체 봉지재 중량 대비 30중량% 이하로 포함하는 LED 봉지재를 구비하는 LED 패키지이다.And an LED encapsulant containing a compound represented by the following formula (1) in a polymer resin in an amount of 30% by weight or less based on the total encapsulating material weight.
[화학식 1][Chemical Formula 1]
Ma(OH)b(CO3)cOd M a (OH) b (CO 3 ) c O d
여기서, M은 Sc, Y, La, Al, Lu, Ga, Zn, V, Zr, Ca, Sr, Ba, Sn, Mn, Bi 또는 Ac이고,Wherein M is at least one element selected from Sc, Y, La, Al, Lu, Ga, Zn, V, Zr, Ca, Sr, Ba, Sn,
a는 1, 또는 2, b는 0 내지 2, c는 0 내지 3, d는 0 내지 3이다.a is 1 or 2, b is 0 to 2, c is 0 to 3, and d is 0 to 3.
다만, b, c, 및 d는 동시에 0이 아니고, b 및 c는 동시에 0이거나, 동시에 0이 아니다.B, c and d are not simultaneously 0, and b and c are both 0 or 0 at the same time.
상기 화학식 1 화합물이 고분자 수지 내에 포함되는 경우, 전체 봉지재 중량 대비, 함량이 30 중량% 이내일 경우가 더 바람직하다. 너무 극소량이 포함되면, 광 지향각 조절효과가 미미할 수 있고, 반대로, 너무 많이 포함되어도, 광추출 효율 저하로 인한, 조도나 휘도의 저하가 우려될 수 있기 때문이다. 이에 대한 보다 상세한 설명은, 후술할 실시예 및 실험예를 참조하여 이해할 수 있을 것이다.When the compound of Formula 1 is contained in the polymer resin, it is more preferable that the content of the compound is within 30% by weight based on the total weight of encapsulating material. If the amount is too small, the effect of adjusting the light directing angle may be insignificant. On the contrary, even if the amount is too much, the light extraction efficiency may be deteriorated and the luminance or luminance may be deteriorated. A more detailed description thereof will be understood with reference to the following Examples and Experimental Examples.
상기 화학식 1 화합물은, Y(OH)CO3, 또는 Y2O3인 것이 바람직하다. The compound of the formula (1) is preferably Y (OH) CO 3 or Y 2 O 3 .
상기 화학식 1 화합물은, 구형도 0.5 ~ 1인 구형 입자인 것이 바람직하고, 구형도가 1에 가까울수록 더욱 바람직하다. 상기 구형도는, 입자의 최대 직경을 최소 직경으로 나눈 값으로서, 하기 수학식 1과 같이 정의될 수 있고, 1에 가까울수록 완전한 구형에 가까움을 나타낸다.The compound of Formula 1 is preferably a spherical particle having a sphericity of 0.5 to 1, and more preferably a sphericity of 1 or less. The sphericity is a value obtained by dividing the maximum diameter of the particles by the minimum diameter, and can be defined by the following equation (1). The closer to 1, the closer to a complete sphere.
[수학식 1][Equation 1]
상기 구형 입자는 10㎚ ~ 1㎛ 범위 이내의 입경을 가지는 것이 바람직하다. 구형 입자의 화합물의 종류에 따라 조금 다를 수 있지만, 입경크기 10㎚미만이거나, 2㎛초과인 경우, 광추출 효율이 저하될 수 있기 때문이다. 또한, 입자의 종류에 따라 다소의 차이는 있지만, 입경 크기에 따른 광추출 효율의 최적의 범위가 존재하기 때문에, 입경크기의 범위는 광추출 효율 측면에서 매우 중요한 구성이 될 수 있다.The spherical particles preferably have a particle diameter within a range of 10 nm to 1 mu m. This may be slightly different depending on the kind of the compound of the spherical particles, but if the particle size is less than 10 nm or more than 2 탆, the light extraction efficiency may be lowered. In addition, although there is some difference depending on the kind of the particles, the range of the particle size can be a very important structure in terms of the light extraction efficiency because there is an optimum range of the light extraction efficiency according to the particle size.
상기 구형 입자는, 단분산인 것이 좋고, 단분산이 경우, 일정한 굴절율을 부여할 수 있어, 광추출 효율 향상 측면에서 바람직하다.The spherical particles are preferably monodisperse, and in the case of monodisperse, a constant refractive index can be imparted, which is preferable from the viewpoint of improving light extraction efficiency.
상기 화학식 1 화합물은, 1.5 내지 2.5 범위 이내의 굴절율을 가지는 것이 바람직하다. 1.5 미만, 2.5 초과에서는 광 추출 효율 증가 효과가 없을 수 있다.The compound of Formula 1 preferably has a refractive index within a range of 1.5 to 2.5. If it is less than 1.5, and if it is more than 2.5, there is no effect of increasing the light extraction efficiency.
상기 고분자 수지는, 종래의 당해 기술분야에서 널리 사용되는 고분자 수지를 사용할 수 있고, 특별히 제한되지 않는다. 예를 들어, 실리콘계 수지, 페놀계 수지, 아크릴 수지, 폴리스타렌, 폴리 우레탄, 벤조구아나민 수지 및 에폭시계 수지에서 선택되어지는 1종 이상인 것을 사용할 수 있고, 상기 실리콘계 수지는, 폴리 실란, 폴리 실록산, 및 이들 조합 중 어느 하나를 사용할 수 있고, 상기 페놀계 수지는, 비스페놀형 페놀 수지, 레졸형 페놀수지, 및 레졸형 나프톨 수지에서 선택된 적어도 하나의 페놀 수지인 것을 사용할 수 있으며, 상기 에폭시계 수지는, 비스페놀 F형 에폭시, 비스페놀 A형 에폭시, 페놀 노볼락형 에폭시, 및 크레졸 노볼락형 에폭시에서 선택된 적어도 하나의 에폭시 수지인 것을 사용할 수 있다. 특히, 상기 고분자 수지는, 에폭시계 수지, 및/또는 실리콘계 수지가 바람직하다.The polymer resin may be a polymer resin widely used in the related art and is not particularly limited. For example, at least one selected from a silicone resin, a phenol resin, an acrylic resin, a polystyrene, a polyurethane, a benzoguanamine resin, and an epoxy resin may be used. The silicone resin may be polysilane, poly Siloxane, and combinations thereof. The phenolic resin may be at least one phenol resin selected from a bisphenol-type phenol resin, a resol-type phenol resin, and a resol-type naphthol resin. The epoxy- The resin may be at least one epoxy resin selected from bisphenol F type epoxy, bisphenol A type epoxy, phenol novolak type epoxy, and cresol novolak type epoxy. Particularly, the polymer resin is preferably an epoxy resin and / or a silicone resin.
도 1에는, 본 발명의 LED 패키지의 일 구현예를 나타내었다. 도 1에 도시된 바와 같이, 발명에 따른 LED 패키지(100)는 기판(110)과, 상기 기판(110)상에 설치된 리드 프레임(120)과, 상기 리드 프레임(120)에 설치되어 빛을 발광하는 LED 칩(130)과, 상기 LED 칩(130)과 리드 프레임(120)을 전기적으로 연결하는 본딩 와이어(140)와, 상기 LED 칩(130)으로부터 발광된 빛을 반사시키는 리플렉터(150)와, 상기 리플렉터(150)의 내부에 충전되어 LED 칩(130)과 본딩 와이어(140)를 밀봉하는 봉지재(200)를 포함하여 구성될 수 있다.
Fig. 1 shows an embodiment of the LED package of the present invention. 1, an
이하, 본 발명에 대하여 실시예를 들어 보다 더 상세히 설명한다. 이하의 실시예는 발명의 상세한 설명을 위한 것일 뿐, 이에 의해 권리범위를 제한하려는 의도가 아님을 분명히 해둔다.
Hereinafter, the present invention will be described in more detail by way of examples. It is to be understood that the following embodiments are for the purpose of illustration only and are not intended to limit the scope of the present invention.
실시예Example
실시예Example 1 One
Y(OH)CO3입자 제조는 증류수 100 mL를 기준으로 한다. 증류수 100mL에 4g 이트륨 질산염 수화물, 40g 우레아를 용해한 후, 30 분간 충분히 교반하면서 혼합하였다. 교반한 후, 질산과 수산화암모늄의 염기를 통해 pH를 5 내지 6으로 조절하였다. 상기 혼합 용액을 90℃에서 가열하며 1시간 교반한 후 여과, 증류수 세척을 3회 실시하였다. 세척 완료된 Y(OH)CO3 입자를 70℃오븐에서 3 시간 건조하여 300nm 크기 이하의 입자를 제조 하였다. 구형 입자는 모두 일정한 크기의 단분산을 이루었다.Preparation of Y (OH) CO 3 particles is based on 100 mL of distilled water. 4 g of yttrium nitrate hydrate and 40 g of urea were dissolved in 100 ml of distilled water, and the mixture was thoroughly stirred for 30 minutes. After stirring, the pH was adjusted to 5-6 via a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 DEG C and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried in an oven at 70 ° C for 3 hours to prepare particles having a size of 300 nm or less. All spherical particles were monodispersed with uniform size.
실리콘계 수지(OE 6631 A 와 OE 6631 B를 1:2 비율로 섞은 것)에, 상기 Y(OH)CO3입자를 실리콘계 수지 98중량%, Y(OH)CO3 2중량% 비율로 첨가한 후, 이를 호모게나이저에 넣어 균질화 시켜 봉지재 조성물을 제조하였다.
After addition to, the Y (OH) CO 3 particles 98% by weight of a silicone-based resin, Y (OH)
실시예Example 2 2
실리콘계 수지에, 상기 Y(OH)CO3입자를, 실리콘계 수지 96중량%, Y(OH)CO3 4중량% 비율로 첨가한 점을 제외하고는, 모두 실시예 1과 동일하게 봉지재 조성물을 제조하였다.
A silicone-based resin, the Y (OH) CO 3 particles, silicone-based resin 96 wt%, Y (OH) CO 3 4 , except that the addition to the weight% ratio, for both the first embodiment the same encapsulant composition and .
실시예Example 3 3
실리콘계 수지에, 상기 Y(OH)CO3입자를, 실리콘계 수지 95중량%, Y(OH)CO3 5중량% 비율로 첨가한 점을 제외하고는, 모두 실시예 1과 동일하게 봉지재 조성물을 제조하였다.
A silicone-based resin, the Y (OH) CO 3 particles, silicone-based resin 95% by weight, Y (OH)
실시예Example 4 4
실리콘계 수지에, 상기 Y(OH)CO3입자를, 실리콘계 수지 90중량%, Y(OH)CO3 10중량% 비율로 첨가한 점을 제외하고는, 모두 실시예 1과 동일하게 봉지재 조성물을 제조하였다.
A silicone-based resin, the Y (OH) CO 3 particles, 90% by weight of a silicone-based resin, Y (OH)
실시예Example 5 5
실리콘계 수지에, 상기 Y(OH)CO3입자를, 실리콘계 수지 80중량%, Y(OH)CO3 20중량% 비율로 첨가한 점을 제외하고는, 모두 실시예 1과 동일하게 봉지재 조성물을 제조하였다.
A silicone-based resin, the Y (OH) CO 3 particles, silicone-based resin of 80% by weight, Y (OH)
비교예Comparative Example
실리콘계 수지 OE 6631 A 와 OE 6631 B를 1:2 비율로 섞어 100 중량% 봉지재 조성물로 제조하였다.
The silicone resin OE 6631 A and OE 6631 B were mixed in a 1: 2 ratio to prepare a 100 wt% encapsulant composition.
실험예Experimental Example - 광 - Optical 지향각Oriented angle 및 휘도 측정 And luminance measurement
상기 실시예 1 내지 5, 및 비교예의 봉지재 조성물을, LED(파장 450 ㎚) 칩을 구비하는 LED 패키지 내에 실장하여, 광 지향각 및 휘도 증가율을 측정하였다. 사용된 발광 소자 패키지는 리드 프레임 위에 다이 본딩으로 연결되어 있는 칩을 발광원으로 한다. 발광 소자와 리드프레임이 전기적으로 연결이 되도록 금속 와이어 본딩을 한 후, 상기 투명 봉지 재료인 실리콘 수지와 무기 나노 입자가 분산되어 있는 봉지재로 몰딩되어 있는 구성이다.The encapsulant compositions of Examples 1 to 5 and Comparative Examples were mounted in an LED package having an LED (wavelength: 450 nm) chip to measure the light directing angle and luminance increase rate. The light emitting device package used is a chip which is connected to the lead frame by die bonding. A metal wire bonding is performed so that the light emitting element and the lead frame are electrically connected to each other, and then the sealing resin is molded with an encapsulant in which the transparent resin encapsulating material and the inorganic nanoparticles are dispersed.
삭제delete
상기 휘도 증가율은 비교예 100 기준으로 휘도가 증가된 정도를 백분율로 표시한 것이다. 휘도 측정은 한국 Professional Scientific Instrument의 DARSA Pro 5200 PL System 기계에 의해 측정 하였다.The luminance increase rate is a percentage of the increase in luminance based on Comparative Example 100. The luminance was measured by a DARSA Pro 5200 PL System machine manufactured by Professional Scientific Instrument, Korea.
결과는 하기 표 1 및 도 2와 같았다.The results are shown in Table 1 and FIG.
상기 표 1, 및 도 2에 나타난 바와 같이, 희토류 입자 함유량에 따라, 광 지향각을 조절할 수 있음을 알 수 있다. 그러나, 희토류 입자가 지나치게 많이 포함되면, 상대 lm(%)이 저하되는 바, 봉지재 전체 중량 대비 약 30 중량%이하로 포함되는 것이 바람직할 것으로 추정된다.
As shown in Table 1 and FIG. 2, it can be seen that the light directing angle can be controlled according to the content of the rare earth particles. However, if the rare earth particles are contained in an excessively large amount, it is presumed that the relative lm (%) is lowered and it is preferable that the relative lm (%) is about 30 wt% or less based on the total weight of the sealing material.
100: LED 패키지 110: 기판
120: 리드 프레임 130: LED 칩
140: 본딩 와이어 150: 리플렉터
210: 봉지재 220: 희토류 금속 산화물 입자100: LED package 110: substrate
120: lead frame 130: LED chip
140: bonding wire 150: reflector
210: encapsulant 220: rare earth metal oxide particle
Claims (8)
고분자 수지 내에 하기 화학식 1로 표현되는 화합물을, 전체 봉지재 중량 대비 30 중량% 이하로 포함하는 LED 봉지재를 구비하는 LED 패키지.
[화학식 1]
Ma(OH)b(CO3)cOd
여기서, M은 Sc, Y, La, Al, Lu, Ga, Zn, V, Zr, Ca, Sr, Ba, Sn, Mn, Bi 또는 Ac이고,
a는 1 또는 2, b는 0 내지 2, c는 0 내지 3, d는 0 내지 3이다.
다만, b 및 c는 동시에 0이 아니다.LED chip; And
1. An LED package comprising an LED encapsulant containing a compound represented by the following formula (1) in a polymer resin in an amount of 30 wt% or less based on the total encapsulating material weight.
[Chemical Formula 1]
M a (OH) b (CO 3 ) c O d
Wherein M is at least one element selected from Sc, Y, La, Al, Lu, Ga, Zn, V, Zr, Ca, Sr, Ba, Sn,
a is 1 or 2, b is 0 to 2, c is 0 to 3, and d is 0 to 3.
However, b and c are not 0 at the same time.
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