KR101571091B1 - 유기 발광 표시 장치의 제조 방법 - Google Patents
유기 발광 표시 장치의 제조 방법 Download PDFInfo
- Publication number
- KR101571091B1 KR101571091B1 KR1020080083394A KR20080083394A KR101571091B1 KR 101571091 B1 KR101571091 B1 KR 101571091B1 KR 1020080083394 A KR1020080083394 A KR 1020080083394A KR 20080083394 A KR20080083394 A KR 20080083394A KR 101571091 B1 KR101571091 B1 KR 101571091B1
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- South Korea
- Prior art keywords
- light emitting
- organic light
- liquid crystal
- crystal polymer
- polymer layer
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title 1
- 229920000106 Liquid crystal polymer Polymers 0.000 claims abstract description 79
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000007789 sealing Methods 0.000 claims description 42
- 230000005684 electric field Effects 0.000 claims description 4
- 230000001934 delay Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 104
- 239000010409 thin film Substances 0.000 description 32
- 239000010408 film Substances 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 10
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 239000011575 calcium Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 1
- OMIHGPLIXGGMJB-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]hepta-1,3,5-triene Chemical class C1=CC=C2OC2=C1 OMIHGPLIXGGMJB-UHFFFAOYSA-N 0.000 description 1
- ODPYDILFQYARBK-UHFFFAOYSA-N 7-thiabicyclo[4.1.0]hepta-1,3,5-triene Chemical class C1=CC=C2SC2=C1 ODPYDILFQYARBK-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- -1 aromatic dicarboxylic acids Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
- H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (14)
- 삭제
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- 기판 부재를 제공하는 단계;상기 기판 부재 상에 유기 발광 소자를 형성하는 단계;상기 유기 발광 소자의 발광면 상에 통과하는 빛의 위상을 지연하는 액정 폴리머(liquid crystal polymers, LCP)층을 형성하는 단계를 포함하고,상기 액정 폴리머층은 4㎛ 보다 작은 두께를 갖고,상기 액정 폴리머층을 형성하는 단계는상기 액정 폴리머를 도포하는 단계;전계를 가하여 상기 액정 폴리머를 배향시키는 단계; 및배향된 상기 액정 폴리머를 고화시키는 단계를 포함하는 유기 발광 표시 장치의 제조 방법.
- 제9항에서,상기 기판 부재에 대향 배치되어 상기 유기 발광 소자를 커버하는 밀봉 부재를 형성하는 단계를 더 포함하며,상기 액정 폴리머층은 상기 유기 발광 소자와 상기 밀봉 부재 사이에 형성되는 유기 발광 표시 장치의 제조 방법.
- 제10항에서,상기 액정 폴리머층과 상기 밀봉 부재 사이에 배치되어 통과하는 빛을 선편광시키는 편광판을 형성하는 단계를 더 포함하는 유기 발광 표시 장치의 제조 방법.
- 제10항에서,상기 밀봉 부재 상에 배치되어 통과하는 빛을 선편광시키는 편광판을 형성하는 단계를 더 포함하는 유기 발광 표시 장치의 제조 방법.
- 제9항에서,상기 기판 부재에 대향 배치되어 상기 유기 발광 소자를 커버하는 밀봉 부재를 형성하는 단계를 더 포함하며,상기 밀봉 부재는 상기 유기 발광 소자와 상기 액정 폴리머층 사이에 형성되는 유기 발광 표시 장치의 제조 방법.
- 제13항에서,상기 액정 폴리머층 상에 배치되어 통과하는 빛을 선편광시키는 편광판을 형성하는 단계를 더 포함하는 유기 발광 표시 장치의 제조 방법.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080083394A KR101571091B1 (ko) | 2008-08-26 | 2008-08-26 | 유기 발광 표시 장치의 제조 방법 |
US12/461,701 US8684780B2 (en) | 2008-08-26 | 2009-08-21 | Organic light emitting diode display, display device including the same, and associated methods |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020080083394A KR101571091B1 (ko) | 2008-08-26 | 2008-08-26 | 유기 발광 표시 장치의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100024709A KR20100024709A (ko) | 2010-03-08 |
KR101571091B1 true KR101571091B1 (ko) | 2015-11-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080083394A Active KR101571091B1 (ko) | 2008-08-26 | 2008-08-26 | 유기 발광 표시 장치의 제조 방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8684780B2 (ko) |
KR (1) | KR101571091B1 (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8451193B2 (en) * | 2009-08-31 | 2013-05-28 | Motorola Solutions, Inc. | Overlayed display |
KR101280795B1 (ko) * | 2010-08-13 | 2013-07-05 | 주식회사 엘지화학 | 유기 발광 소자 및 이의 제조 방법 |
KR20120139076A (ko) | 2011-06-16 | 2012-12-27 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
JP6325318B2 (ja) * | 2014-04-08 | 2018-05-16 | 株式会社ジャパンディスプレイ | 表示装置 |
CN104319282B (zh) * | 2014-09-23 | 2018-02-27 | 京东方科技集团股份有限公司 | 发光二极管显示面板 |
CN105575993B (zh) * | 2014-10-15 | 2018-07-24 | 上海和辉光电有限公司 | 有机发光显示装置及其制作方法 |
KR102472607B1 (ko) * | 2016-02-03 | 2022-11-30 | 삼성디스플레이 주식회사 | 표시 장치 |
TWI603135B (zh) * | 2016-10-13 | 2017-10-21 | 財團法人工業技術研究院 | 三維顯示模組 |
CN109119456B (zh) * | 2018-10-23 | 2021-01-22 | 京东方科技集团股份有限公司 | 显示面板及显示装置 |
CN109686761B (zh) * | 2018-12-14 | 2020-10-02 | 云谷(固安)科技有限公司 | 显示面板 |
CN111081747A (zh) * | 2019-12-25 | 2020-04-28 | 武汉华星光电半导体显示技术有限公司 | 一种oled显示面板及其制备方法 |
CN111965893A (zh) * | 2020-08-07 | 2020-11-20 | 武汉华星光电技术有限公司 | 一种显示装置及其制备方法 |
KR102706131B1 (ko) * | 2020-12-31 | 2024-09-11 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
CN118838084B (zh) * | 2024-07-02 | 2025-07-04 | 惠科股份有限公司 | 显示模组及显示装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040135499A1 (en) * | 2003-01-10 | 2004-07-15 | Eastman Kodak Company | Oled displays having improved contrast |
JP2005148473A (ja) * | 2003-11-17 | 2005-06-09 | Nitto Denko Corp | 垂直配向膜、液晶配向膜及びその製造方法、光学フィルム並びに画像表示装置 |
US20060255706A1 (en) * | 2001-02-20 | 2006-11-16 | Sharp Kabushiki Kaisha | Display |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6825496B2 (en) * | 2001-01-17 | 2004-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP4027164B2 (ja) * | 2002-06-21 | 2007-12-26 | 株式会社日立製作所 | 表示装置 |
US7030555B2 (en) * | 2003-04-04 | 2006-04-18 | Nitto Denko Corporation | Organic electroluminescence device, planar light source and display device using the same |
US20060091418A1 (en) * | 2004-11-04 | 2006-05-04 | Chew Tong F | Side emitting LED device and method of fabrication |
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2008
- 2008-08-26 KR KR1020080083394A patent/KR101571091B1/ko active Active
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2009
- 2009-08-21 US US12/461,701 patent/US8684780B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060255706A1 (en) * | 2001-02-20 | 2006-11-16 | Sharp Kabushiki Kaisha | Display |
US20040135499A1 (en) * | 2003-01-10 | 2004-07-15 | Eastman Kodak Company | Oled displays having improved contrast |
JP2005148473A (ja) * | 2003-11-17 | 2005-06-09 | Nitto Denko Corp | 垂直配向膜、液晶配向膜及びその製造方法、光学フィルム並びに画像表示装置 |
Also Published As
Publication number | Publication date |
---|---|
US20100052528A1 (en) | 2010-03-04 |
KR20100024709A (ko) | 2010-03-08 |
US8684780B2 (en) | 2014-04-01 |
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