KR101255996B1 - 전압 레귤레이터 - Google Patents
전압 레귤레이터 Download PDFInfo
- Publication number
- KR101255996B1 KR101255996B1 KR1020060014996A KR20060014996A KR101255996B1 KR 101255996 B1 KR101255996 B1 KR 101255996B1 KR 1020060014996 A KR1020060014996 A KR 1020060014996A KR 20060014996 A KR20060014996 A KR 20060014996A KR 101255996 B1 KR101255996 B1 KR 101255996B1
- Authority
- KR
- South Korea
- Prior art keywords
- voltage
- circuit
- power supply
- output terminal
- supply voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000012544 monitoring process Methods 0.000 claims abstract description 21
- 238000001514 detection method Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
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Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47G—HOUSEHOLD OR TABLE EQUIPMENT
- A47G19/00—Table service
- A47G19/24—Shakers for salt, pepper, sugar, or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D81/00—Containers, packaging elements, or packages, for contents presenting particular transport or storage problems, or adapted to be used for non-packaging purposes after removal of contents
- B65D81/32—Containers, packaging elements, or packages, for contents presenting particular transport or storage problems, or adapted to be used for non-packaging purposes after removal of contents for packaging two or more different materials which must be maintained separate prior to use in admixture
- B65D81/3261—Flexible containers having several compartments
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Food Science & Technology (AREA)
- Mechanical Engineering (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
Abstract
Description
Claims (5)
- 통상 동작 모드 시에 기준전압을 발생하고, 슬리브 모드 시에는 동작을 정지하는 기준전압회로와,통상 동작 모드 시에 상기 기준전압과 감시전압을 비교해서 그 차이를 증폭해서 검출전압을 출력하고, 슬리브 모드 시에는 동작을 정지하는 증폭회로와,전원전압이 부여되는 전원단자와 내부전원전압을 출력하는 출력 단자와의 사이에 접속되어, 상기 검출전압에 의해 도통상태가 제어되는 P채널 MOS 트랜지스터와,접지 전압이 인가되는 접지 단자와 상기 출력 단자와의 사이에 접속되어, 상기 출력 단자의 전압을 분압해서 상기 감시전압으로서 상기 비교 회로에 부여하는 저항 분압 회로와,슬리브 모드 시에 상기 내부전원전압과 다른 저전원전압을 생성하여 상기 출력 단자에 출력하고, 통상 동작 모드 시에는 동작을 정지하는 서브 레귤레이터 회로를 구비한 것을 특징으로 하는 전압 레귤레이터.
- 통상 동작 모드 시에 기준전압을 발생하고, 슬리브 모드 시에는 동작을 정지하는 기준전압회로와,통상 동작 모드 시에 상기 기준전압과 감시전압을 비교해서 그 차이의 전압 에 대응하는 검출전압을 출력하고, 슬리브 모드 시에는 동작을 정지하는 비교 회로와,전원전압이 부여되는 전원단자와 내부전원전압을 출력하는 출력 단자와의 사이에 접속되어, 상기 검출전압에 의해 도통상태가 제어되는 P채널 MOS 트랜지스터와,접지 전압이 인가되는 접지 단자와 상기 출력 단자와의 사이에 접속되어, 상기 출력 단자의 전압을 분압하여 상기 감시전압으로서 상기 비교 회로에 부여하는 저항분압 회로와,상기 내부전원전압보다도 낮은 저전원전압을 생성하는 서브 레귤레이터 회로와,상기 서브 레귤레이터 회로의 출력측과 상기 출력 단자와의 사이에 접속되어, 슬리브 모드 시에 온 상태가 되어서 상기 서브 레귤레이터 회로에서 생성된 저전원전압을 상기 출력 단자에 출력하고, 통상 동작 모드 시에는 오프 상태가 되는 스위치 회로를 구비한 것을 특징으로 하는 전압 레귤레이터.
- 제 1항 또는 제 2항에 있어서,상기 저항 분압 회로와 상기 접지 단자 사이, 또는 상기 저항 분압 회로와 상기 출력 단자와의 사이에 삽입되어, 슬리브 모드 시에 오프 상태가 되는 스위치용의 트랜지스터를 설치한 것을 특징으로 하는 전압 레귤레이터.
- 제 3항에 있어서,상기 서브 레귤레이터 회로는,전원전압과 접지 전압 사이에 접속된 제1의 트랜지스터와 저항에 의해 기준전류를 흐르게 하는 기준전류회로와,상기 제1의 트랜지스터에 대하여 전류 미러 회로를 구성함으로써 상기 기준전류에 따른 전류를 흐르게 하는 제2의 트랜지스터와,상기 제2의 트랜지스터로부터 공급되는 전류에 의해 임계값 전압을 출력하는 상시 온 상태의 단수 또는 복수의 제3의 트랜지스터와,상기 임계값 전압을 상기 저전원전압으로서 출력하는 전압 폴로워 회로를 가지는 것을 특징으로 하는 전압 레귤레이터.
- 제 4항에 있어서,상기 제3의 트랜지스터는, 슬리브 모드 시에 상기 저전원전압에 의해 동작하는 부하 회로를 구성하는 트랜지스터와 동일 트랜지스터 구조로 형성된 것을 특징으로 하는 전압 레귤레이터.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2005-00210815 | 2005-07-21 | ||
JP2005210815A JP4774247B2 (ja) | 2005-07-21 | 2005-07-21 | 電圧レギュレータ |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070012187A KR20070012187A (ko) | 2007-01-25 |
KR101255996B1 true KR101255996B1 (ko) | 2013-04-18 |
Family
ID=37656771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060014996A Expired - Fee Related KR101255996B1 (ko) | 2005-07-21 | 2006-02-16 | 전압 레귤레이터 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7193399B2 (ko) |
JP (1) | JP4774247B2 (ko) |
KR (1) | KR101255996B1 (ko) |
CN (1) | CN1900875B (ko) |
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JP2008217677A (ja) | 2007-03-07 | 2008-09-18 | Ricoh Co Ltd | 定電圧回路及びその動作制御方法 |
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US8305829B2 (en) * | 2009-02-23 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory power gating circuit for controlling internal voltage of a memory array, system and method for controlling the same |
US8305790B2 (en) * | 2009-03-16 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical anti-fuse and related applications |
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US8912602B2 (en) * | 2009-04-14 | 2014-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and methods for forming the same |
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US9484462B2 (en) | 2009-09-24 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure of fin field effect transistor |
US8264021B2 (en) * | 2009-10-01 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Finfets and methods for forming the same |
US8759943B2 (en) | 2010-10-08 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor having notched fin structure and method of making the same |
US8980719B2 (en) | 2010-04-28 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for doping fin field-effect transistors |
US8623728B2 (en) | 2009-07-28 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming high germanium concentration SiGe stressor |
US8629478B2 (en) * | 2009-07-31 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure for high mobility multiple-gate transistor |
US8264032B2 (en) * | 2009-09-01 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Accumulation type FinFET, circuits and fabrication method thereof |
US8472227B2 (en) * | 2010-01-27 | 2013-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuits and methods for forming the same |
US8482073B2 (en) * | 2010-03-25 | 2013-07-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit including FINFETs and methods for forming the same |
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US20110097867A1 (en) * | 2009-10-22 | 2011-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of controlling gate thicknesses in forming fusi gates |
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CN102082457B (zh) * | 2011-02-17 | 2013-03-06 | 北京物资学院 | 一种充电装置及控制方法 |
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JP6312492B2 (ja) * | 2014-03-27 | 2018-04-18 | ラピスセミコンダクタ株式会社 | 半導体装置及び電流源制御方法 |
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CN105242736A (zh) * | 2015-10-27 | 2016-01-13 | 上海芯圣电子股份有限公司 | 一种辅助ldo电路及切换供电电路 |
TWI603872B (zh) * | 2015-11-13 | 2017-11-01 | 財團法人工業技術研究院 | 應用於巡航系統之電源供應裝置及電源供應方法 |
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JP7173915B2 (ja) * | 2019-03-28 | 2022-11-16 | ラピスセミコンダクタ株式会社 | 電源回路 |
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KR102232908B1 (ko) | 2020-10-15 | 2021-03-29 | 주식회사 파워엘에스아이 | 시퀀스 제어가 가능한 멀티 전원 공급 장치 |
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2006
- 2006-02-16 KR KR1020060014996A patent/KR101255996B1/ko not_active Expired - Fee Related
- 2006-02-20 CN CN200610004190XA patent/CN1900875B/zh not_active Expired - Fee Related
- 2006-04-19 US US11/406,330 patent/US7193399B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
US20070018625A1 (en) | 2007-01-25 |
CN1900875B (zh) | 2010-08-11 |
JP2007026337A (ja) | 2007-02-01 |
CN1900875A (zh) | 2007-01-24 |
JP4774247B2 (ja) | 2011-09-14 |
KR20070012187A (ko) | 2007-01-25 |
US7193399B2 (en) | 2007-03-20 |
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Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20060216 |
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