KR101146063B1 - 사이클형 고압 및 저압 세정 단계들을 이용한 원격 플라즈마 세정 방법 - Google Patents
사이클형 고압 및 저압 세정 단계들을 이용한 원격 플라즈마 세정 방법 Download PDFInfo
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 29
- 239000011737 fluorine Substances 0.000 claims abstract description 29
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- 230000008021 deposition Effects 0.000 claims description 14
- 230000001351 cycling effect Effects 0.000 claims description 7
- 238000011065 in-situ storage Methods 0.000 claims description 7
- 238000009825 accumulation Methods 0.000 claims description 5
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 238000000151 deposition Methods 0.000 description 10
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
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- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
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- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
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- -1 for example Chemical compound 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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- 239000000376 reactant Substances 0.000 description 1
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- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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Abstract
Description
도 2a는 본원 발명의 하나의 특정 실시예에 따른 챔버 압력 변화를 도시한 그래프이다.
도 2b는 도2a에 도시된 세정 프로세스에 따라 시간 경과에 따른 SiF4 방출을 도시한 그래프이다.
도 3a는 공지된 세정 프로세스에 따라 시간 경과에 따른 챔버 압력의 변화를 도시한 그래프이다.
도 3b는 도 3a에 도시된 세정 프로세스에 따라 시간 경과에 따른 SiF4 방출을 도시한 그래프이다.
도 4a 및 도 4b는 본원 발명의 실시예 대 공지된 세정 프로세스에 따른 세정 프로세스들의 시간 경과에 따른 세정 속도를 비교한 그래프이다.
도 5a 및 도 5b는 본원 발명과 종래 기술의 기술에 따라 실시된 세정 프로세스의 테스트 결과를 도시한 도면이다.
도 6은 본원 발명의 실시예들이 이용될 수 있는 예시적인 기판 프로세싱 시스템을 도시한 단면도이다.
Claims (19)
- 기판 프로세싱 챔버 내에 배치된 기판을 프로세싱 한 후에 기판 프로세싱 챔버의 하나 또는 둘 이상의 내부 표면으로부터 원치 않는 증착 축적물을 제거하기 위한 방법으로서:
기판 프로세싱 챔버의 외부로 기판을 이송하는 단계; 그리고
원치 않는 증착 축적물을 제거하는 단계를 포함하며,
상기 원치 않는 증착 축적물을 제거하는 단계는:
(a) 기판 프로세싱 챔버에 유체적으로 커플링된 원격 플라즈마 공급원 내로 불소-함유 에칭제 가스를 유동시키고, 상기 불소-함유 에칭제 가스로부터 반응성 종들을 형성하고 그리고 반응성 종들을 기판 프로세싱 챔버 내로 이송함으로써; 그리고
(b) 제 1 범위 내의 고압과 제 2 범위 내의 저압 사이에서 고압 및 저압의 둘 이상의 사이클 동안 기판 프로세싱 챔버 내에서 압력을 사이클링하는 한편 불소-함유 에칭제 가스를 원격 플라즈마 공급원 내로 연속적으로 유동시키고 그리고 반응성 종들을 기판 프로세싱 챔버 내로 연속적으로 이송함으로써, 이루어지고,
상기 고압이 상기 저압 보다 압력이 높고, 고압 사이클 중에 상기 원격 플라즈마 공급원 내로 유동하는 상기 불소-함유 에칭제 가스의 유량이 3000 sccm 또는 그 초과이고 그리고 저압 사이클의 지속시간이 4 내지 8초인
축적물 제거 방법.
- 제 1 항에 있어서,
상기 고압이 15 Torr 미만이고 상기 저압이 상기 고압의 50 퍼센트 또는 그 미만인
축적물 제거 방법.
- 제 1 항에 있어서,
상기 고압이 4-15 Torr이고 상기 저압이 0.5-4 Torr인
축적물 제거 방법.
- 제 1 항에 있어서,
상기 고압이 5-8 Torr이고 상기 저압이 0.5-2.5 Torr인
축적물 제거 방법.
- 제 2 항에 있어서,
고압 사이클 동안에 기판 프로세싱 챔버 내의 압력이 제 1 범위에 있을 때 상기 원격 플라즈마 공급원으로의 불소-함유 에칭제 가스의 유량이 분당 4 리터 이상인
축적물 제거 방법.
- 제 1 항에 있어서,
상기 불소-함유 에칭제 가스가 삼불화 질소를 포함하는
축적물 제거 방법.
- 제 1 항에 있어서,
각각의 저압 사이클의 지속시간이 선행하는 고압 사이클의 지속시간의 10-33 퍼센트인
축적물 제거 방법.
- 제 1 항에 있어서,
불소-함유 에칭제 가스를 원격 플라즈마 공급원으로 유동시키기에 앞서서 불활성 가스로부터 형성된 인 시츄 플라즈마로 기판 프로세싱 챔버를 가열하는 단계를 더 포함하는
축적물 제거 방법.
- 제 1 항에 있어서,
상기 고압 및 저압 사이클들이 축적물 제거 방법 중에 4차례 이상 사이클링되는
축적물 제거 방법.
- 기판 프로세싱 챔버 내에 배치된 기판을 프로세싱 한 후에 기판 프로세싱 챔버의 하나 또는 둘 이상의 내부 표면으로부터 원치 않는 증착 축적물을 제거하기 위한 방법으로서:
기판 프로세싱 챔버의 외부로 기판을 이송하는 단계; 그리고
원치 않는 증착 축적물을 제거하는 단계를 포함하며,
상기 원치 않는 증착 축적물을 제거하는 단계는:
(a) 기판 프로세싱 챔버에 유체적으로 커플링된 원격 플라즈마 공급원 내로 불소-함유 에칭제 가스를 유동시키고 그리고 상기 불소-함유 에칭제 가스로부터 반응성 종들을 형성함으로써; 그리고
(b) 이하의 사이클을 복수 번 반복하는 동안 원격 플라즈마 공급원으로부터 기판 프로세싱 챔버로 상기 반응성 종의 연속적인 유동을 유지하는 단계를 포함하고,
상기 사이클이:
(ⅰ) 기판 프로세싱 챔버 내의 압력이 4-15 Torr로 유지되는 동안 반응성 종이 기판 프로세싱 챔버 내로 유입되는 고압 세정 단계, 그리고
(ⅱ) 기판 프로세싱 챔버의 압력을 고압 세정 단계에서 도달되는 고압의 50 퍼센트 이상 만큼 감소시키면서 반응성 종을 기판 프로세싱 챔버 내로 유입시키는 저압 세정 단계로 구성되며,
상기 고압 세정 단계 중에 상기 원격 플라즈마 공급원 내로 유동하는 상기 불소-함유 에칭제 가스의 유량이 3000 sccm 또는 그 초과이고 그리고 저압 세정 단계의 지속시간이 4 내지 8초인
축적물 제거 방법.
- 제 10 항에 있어서,
상기 고압이 5-8 Torr이고 상기 저압이 0.5-2.5 Torr인
축적물 제거 방법.
- 제 10 항에 있어서,
상기 고압 세정 단계 동안에 기판 프로세싱 챔버 내의 압력이 4-15 Torr에서 유지될 때 상기 원격 플라즈마 공급원으로의 불소-함유 에칭제 가스의 유량이 분당 4 리터 이상인
축적물 제거 방법.
- 제 10 항에 있어서,
상기 불소-함유 에칭제 가스가 삼불화 질소를 포함하는
축적물 제거 방법.
- 제 10 항에 있어서,
상기 고압 및 저압 단계들이 축적물 제거 방법 동안에 4차례 이상 사이클링되는
축적물 제거 방법.
- 제 10 항에 있어서,
상기 저압 세정 단계가 상기 고압 세정 단계의 지속시간의 10-33 퍼센트의 지속시간을 가지는
축적물 제거 방법.
- 제 1 항에 있어서,
상기 (b) 단계 이후에, 상기 불소-함유 에칭제 가스의 유량을 감소시키는 단계를 더 포함하는
축적물 제거 방법.
- 제 16 항에 있어서,
상기 불소-함유 에칭제 가스가 삼불화 질소를 포함하는
축적물 제거 방법.
- 제 10 항에 있어서,
상기 (b)(ⅱ) 단계 이후에, 불소-함유 에칭제 가스의 유량을 감소시키는 단계를 더 포함하는
축적물 제거 방법.
- 제 18 항에 있어서,
상기 불소-함유 에칭제 가스가 삼불화 질소를 포함하는
축적물 제거 방법.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10763408P | 2008-10-22 | 2008-10-22 | |
US61/107,634 | 2008-10-22 | ||
US12/508,381 US7967913B2 (en) | 2008-10-22 | 2009-07-23 | Remote plasma clean process with cycled high and low pressure clean steps |
US12/508,381 | 2009-07-23 | ||
PCT/US2009/059878 WO2010047953A2 (en) | 2008-10-22 | 2009-10-07 | A remote plasma clean process with cycled high and low pressure clean steps |
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Publication Number | Publication Date |
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KR20110084265A KR20110084265A (ko) | 2011-07-21 |
KR101146063B1 true KR101146063B1 (ko) | 2012-05-14 |
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CN102265387A (zh) | 2011-11-30 |
WO2010047953A2 (en) | 2010-04-29 |
TW201023235A (en) | 2010-06-16 |
US20100095979A1 (en) | 2010-04-22 |
KR20110084265A (ko) | 2011-07-21 |
WO2010047953A3 (en) | 2010-06-17 |
JP2012506637A (ja) | 2012-03-15 |
US7967913B2 (en) | 2011-06-28 |
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