KR101041447B1 - Nozzle and Apparatus for Processing A Substrate The Same - Google Patents

Abstract

The present invention relates to a substrate processing apparatus, comprising: a substrate supporting member including a spin head on which a substrate is placed; A nozzle for discharging the processing liquid to the substrate placed on the spin head; A processing liquid supply source for supplying the processing liquid to the nozzle; The nozzle has a cross-sectional shape having a slit shape having a first length, and a plurality of individual discharge holes arranged in series in one direction; And a nozzle body having an integrated discharge port through which the individual discharge ports are connected in one slit shape having a length longer than the first length and in which the processing liquid is finally discharged.

Paddle, phenomenon, rotation, nozzle, slit, individual discharge

Description

Nozzle and Apparatus for Processing A Substrate The Same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nozzle to which a resist is applied and to which a developing solution is supplied to an exposed substrate surface for development and a substrate processing apparatus having the same.

In general, in the manufacture of a semiconductor device, a photoresist is applied to a semiconductor wafer as a substrate to be processed, a mask pattern is transferred to the photoresist by an exposure process, and a circuit pattern is formed by developing it.

Here, in the developing step, a so-called paddle which develops a pattern of the photoresist film by continuously supplying the developing solution from the nozzle to the substrate and bringing the developing solution into contact with the pattern formation surface for a predetermined time. The method is generally applied.

As a paddle system, the current mainstream is to use a so-called slit nozzle formed with a discharge port longer than the diameter of the substrate. In the developing method using such a slit nozzle, a rotation method of rotating the substrate 180 degrees while discharging the developer from the slit nozzle, It is largely divided into a scan method in which the slit nozzle is moved in parallel in one direction with respect to the substrate without rotating the substrate.

In the former rotation method, the substrate is rotated by 180 degrees while the nozzle is fixed. Since fresh developer is always supplied near the center of the substrate, there is a problem in that only the vicinity of the center is excessively developed compared to the vicinity of the edge.

The latter scanning method has a problem in that a developer forms a paddle on a substrate through a discharge hole longer than the diameter of the substrate, and at this time, the developer is also supplied to a portion other than the substrate, which wastes the developer and takes a long process time.

In addition, since the conventional nozzle consists of one discharge port, the developer cannot be intensively discharged in a specific section.

In the case of using a nozzle having a discharge hole having a short slit shape, since the developer is discharged to the substrate while moving the nozzle, there is a problem in that the process uniformity is inferior due to vibration generated when the nozzle moves and a driving error of the driving device.

SUMMARY OF THE INVENTION An object of the present invention is to provide a nozzle and a substrate processing apparatus having the same, which have less unevenness in developing treatment and can increase line width uniformity.

It is also an object of the present invention to provide a nozzle and a substrate processing apparatus having the same, which can reduce the amount of developer waste.

It is also an object of the present invention to provide a nozzle and a substrate processing apparatus having the same that a liquid contact scan and a specific section ejection are possible in one nozzle.

The objects of the present invention are not limited thereto, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

The substrate processing apparatus of the present invention for achieving the above object is a substrate support member including a spin head on which the substrate is placed; A nozzle for discharging the processing liquid to the substrate placed on the spin head; A processing liquid supply source for supplying the processing liquid to the nozzle; The nozzle has a plurality of individual ejection openings in the shape of a slit in cross section and arranged in series in one direction.

According to an embodiment of the present invention, each of the individual discharge ports is discharged separately.

According to an embodiment of the present invention, each of the individual discharge holes has a curved surface portion rounded at both ends in the longitudinal direction thereof, and an extension portion wider than the slit width in the center thereof.

According to an embodiment of the present invention, the nozzle includes a main flow path connected to the processing liquid supply source; Branch passages connected to the respective discharge ports from the main passage; Valves provided in each of the branch flow paths.

According to an embodiment of the present invention, the nozzle further includes a distributor for distributing the processing liquid to each of the individual discharge ports and a control unit for controlling the distributor, wherein the distributor comprises: a main flow path connected to the processing liquid supply source; Branch flow paths connecting the main flow path and the individual discharge ports, respectively; And valves for opening and closing the branch flow paths according to a signal provided from the controller.

According to an embodiment of the present invention, the individual discharge ports are interviewed with neighboring side surfaces, and the sum of the total lengths of the individual discharge holes is equal to or larger than the radius of the substrate and smaller than the diameter of the substrate.

A substrate processing apparatus for achieving the above object includes a substrate support member including a spin head on which a substrate is placed; A nozzle for discharging the processing liquid to the substrate placed on the spin head; A processing liquid supply source for supplying the processing liquid to the nozzle; The nozzle has a cross-sectional shape having a slit shape having a first length, and a plurality of individual discharge holes arranged in series in one direction; And an integrated discharge port through which the individual discharge ports are connected in one slit form having a length longer than the first length, and the processing liquid is finally discharged.

According to an embodiment of the present invention, the substrate processing apparatus includes: an arm rotatably installed with the nozzle so as to adjust the discharge angle of the processing liquid discharged from the integrated discharge port; It further comprises an angle adjustment drive for adjusting the discharge angle of the nozzle provided on the arm.

According to an embodiment of the invention, the nozzle is connected to the nozzle body, the distributor for dispensing the processing liquid received from the processing liquid supply source to each of the individual discharge port; And a nozzle controller for controlling the distributor.

According to an embodiment of the present invention, the distributor comprises: a main flow passage connected with the treatment liquid supply source; Branch flow paths connecting the main flow path and the individual discharge ports, respectively; And valves for opening and closing the branch flow paths according to a signal provided from the nozzle controller.

According to an embodiment of the present invention, the nozzle controller adjusts the discharge start time and the discharge end time of each of the individual discharge ports through the distributor control.

According to an embodiment of the present invention, the individual discharge ports located at both ends of the nozzle body discharge the processing liquid to the edge region of the substrate and the central region of the substrate.

According to an embodiment of the invention, the length of the integrated discharge port is equal to or larger than the radius of the substrate and smaller than the diameter of the substrate.

According to an embodiment of the present invention, the ejection position of the nozzle is a parallel line eccentric from a center line connecting the center of rotation of the substrate from the edge of the substrate.

According to an embodiment of the present invention, the nozzle body includes a first inner side surface and a second inner side surface corresponding to the long side of the individual discharge port, and a rounded third inner side surface and a fourth inner side surface corresponding to the short side.

According to an embodiment of the present invention, the first inner side surface and the second inner side surface have an extension portion wider than the slit width.

The nozzle for discharging the processing liquid to the substrate for achieving the above object is a main flow path; Individual discharge ports through which the processing liquid is discharged; Branch flow paths connecting the main flow path and the respective discharge ports; Valves installed in each of the branch passages; The individual discharge ports are arranged along one direction.

According to an embodiment of the present invention, the nozzle has an integrated discharge port in which each of the individual discharge ports is connected in one slit form and the processing liquid is finally discharged.

According to an embodiment of the present invention, each of the individual discharge holes has a curved surface portion rounded at both ends thereof in the longitudinal direction, and an extension portion wider than the slit width in the center thereof.

Method for discharging the processing liquid to the substrate for achieving the above object comprises the steps of preparing a substrate; Preparing a nozzle having individual discharge holes having a short slit shape arranged in a row, the individual discharge holes being connected in one long slit shape, and an integrated discharge hole discharged from a processing liquid; Positioning the nozzle on a substrate such that individual outlets of the nozzle extend from an edge region of the substrate to a central region of the substrate; And discharging the processing liquid to the substrate to be rotated while fixing the position of the nozzle.

According to an embodiment of the present invention, in the processing liquid discharge step, at least two of the individual discharge ports have different discharge amounts or discharge timings.

According to an embodiment of the present invention, each of the individual discharge ports is different from each other at the start of discharge or at the end of discharge.

According to an embodiment of the present invention, the adjacent individual discharge ports partially overlap the discharge timing.

According to an embodiment of the present invention, the individual discharge ports have the same discharge start time point and different discharge end time points.

According to an embodiment of the present invention, the discharge start time point of the individual discharge ports close to the center of the substrate among the two individual discharge ports adjacent to each other is between the discharge start time point and the discharge end time of the individual discharge ports close to the edge of the substrate, and the center of the substrate. The discharge end time of the individual discharge ports close to the end is later than the discharge end time of the individual discharge ports close to the edge of the substrate.

According to an embodiment of the present invention, the individual discharge holes are sequentially discharged from individual discharge holes near the edge of the substrate to individual discharge holes near the center of the substrate.

According to an embodiment of the present invention, the discharging of the processing liquid may further include discharging repeatedly from the individual discharge ports close to the center of the substrate among the individual discharge holes.

According to an embodiment of the present invention, the process liquid ejecting step rotates the nozzle to adjust the ejection angle of the process liquid ejected from the individual ejection openings.

According to the embodiment of the present invention, the discharge angle of the processing liquid discharged from the individual discharge ports is oblique in the rotation direction of the substrate.

According to the present invention, there is little unevenness of the developing treatment and the line width uniformity can be improved.

In addition, according to the present invention, since the developer can be sequentially discharged from the outer edge of the substrate to the center even when the nozzle is not moved, it is possible to obtain the effect of discharging the developer onto the substrate while the nozzle moves.

According to the present invention, the substrate throughput can be improved by shortening the process time.

According to the present invention, the consumption of the treatment liquid can be greatly reduced.

According to the present invention, the developer may be discharged in a state of being in contact with the substrate, or may be selectively discharged in a state of being spaced apart from the substrate.

Hereinafter, a substrate processing apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. First, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are assigned to the same components as much as possible, even if shown on different drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

(Example)

In the present embodiment, a semiconductor substrate is illustrated and described as an example of the substrate processed by the substrate processing apparatus 1, but the present invention is not limited thereto and may be applied to various kinds of substrates such as glass substrates.

1 is a view schematically showing an example of a substrate processing apparatus 1 of the present invention. The substrate processing apparatus 1 performs a photolithography process on a wafer.

Referring to FIG. 1, the substrate processing apparatus 1 has an index portion 10, a processing portion 20, and an interface portion 30, which are sequentially arranged side by side in one direction (hereinafter, the first direction 62). do. The index unit 10 has a cassette holder 12 and a robot movement path 14.

Cassettes 12a in which semiconductor substrates such as a wafer are accommodated are placed in the cassette holder 12. The robot moving path 14 is provided with a robot 14a for transferring wafers between the cassette 12a placed on the cassette holder 12 and the processing unit 20. The robot 14a has a structure that can be moved in a direction perpendicular to the first direction 62 (hereinafter, the second direction 64), the vertical axis rotation, and the vertical direction on the horizontal plane. The structure for transferring the robot 14a in the horizontal direction and the vertical direction can be easily configured by those skilled in the art, and thus a detailed description thereof will be omitted.

The processing unit 20 performs a coating step of applying a photoresist such as a photoresist to the wafer and a developing step of removing photoresist in an exposed region or the opposite region from the wafer on which the exposure process is performed. The processing unit 20 is provided with an application unit 70, a developing unit 80, and a baking unit 50.

One side of the processing unit 20 is provided with an interface unit 30 that is connected to the exposure unit 40. In the interface unit 30, a robot 32 for transferring a wafer between the exposure unit 40 and the processing unit 20 is disposed. The robot 32 has a structure that can be moved in the above-described second direction 64 and the vertical direction.

2 is a perspective view illustrating an example of the processor 20 of FIG. 1.

The processing unit 20 has a first processing chamber 20a and a second processing chamber 20b. The first processing chamber 20a and the second processing chamber 20b have a stacked structure. Units for performing the coating process are provided in the first processing chamber 20a, and units for performing the developing process are provided in the second processing chamber 20b. That is, the coating units 70 and the baking units 50 are provided in the first processing chamber 20a, and the developing units 80 and the baking units 50 are provided in the second processing chamber 20b. In one example, the first processing chamber 20a is disposed above the second processing chamber 20b. Alternatively, the first processing chamber 20a may be disposed below the second processing chamber 20b.

Due to the above-described structure, the wafer has an index unit 10, a first processing chamber 20a, an interface unit 30, an exposure unit 40, an interface unit 30, a second processing chamber 20b, and an index unit 10. ) Will be moved sequentially. That is, during the photolithography process, the wafer is moved in a loop in the vertical direction.

3 is a plan view of the first processing chamber 20a.

Referring to FIG. 3, a first moving path 60a is provided in the first processing chamber 20a in the center in the first direction 62. One end of the first moving path 60a is connected to the index unit 10, and the other end of the first moving path 60a is connected to the interface unit 30. The baking units 50 are arranged in a line along the first moving path 60a on one side of the first moving path 60a, and the coating units 70 are arranged on the other side of the first moving path 60a on the first moving path. It is arranged in a line along 60a. In addition, the baking units 50 and the application unit 70 are disposed so that a plurality of the baking units 50 and the coating unit 70 are stacked up and down. The first moving path 60a is provided with a first robot 62a for transferring a wafer between the interface unit 30, the application unit 70, the baking unit 50, and the index units 10. The guide rail 64a is provided in the first movement path 60a so that the first robot 62a moves linearly in the first direction 62.

The baking unit 50 of the first processing chamber 20a performs a pre-baking process in which the substrate is heated to a predetermined temperature to remove organic substances or moisture from the surface of the substrate before the photoresist is applied. And a bake unit for performing a soft-baking process performed after the photoresist is applied onto the substrate, and a bake unit for performing a process for cooling the substrate.

4 is a plan view of the second processing chamber 20b.

Referring to FIG. 4, the second movement path 60b is provided in the center of the second processing chamber 20b in the first direction 62. One end of the second moving path 60b is connected to the index unit 10, and the other end of the second moving path 60b is connected to the interface unit 30. The baking units 50 are arranged in a line along the second moving path 60b on one side of the second moving path 60b, and the developing units 80 are located on the other side of the second moving path 60b. It is arranged in a line along 60b. In addition, the baking units 50 and the developing units 80 are arranged so that a plurality of the baking units 50 and the developing units 80 are stacked up and down. The second moving path 60b is provided with a second robot 62b that transfers the wafer between the interface unit 30, the developing unit 80, the baking unit 50, and the index units 10.

The baking unit 50 of the second processing chamber 20b is irradiated with light to develop a baking unit that performs a hard-baking process after developing the deformed photoresist, and after exposing the photoresist to a light source. For example, the baking unit which performs the post exposure baking process performed, the baking unit which performs the process which cools a board | substrate, etc. are mentioned.

A guide rail 164b is provided in the second moving path 160b so that the second robot 162b linearly moves in the first direction 62. Unlike the above, the first movement path may be disposed on one side of the first processing chamber, and the coating units and the baking units may be disposed on the other side of the first processing chamber. In addition, a second moving path may be disposed on one side of the second processing chamber, and developing units and baking units may be disposed on the other side of the second processing chamber.

5 and 6 are a plan view and a side view showing the configuration of the developing unit. Although the developing unit is described as an example in the present embodiment, it may be applied to a unit that performs a cleaning and etching process for removing foreign matter and film remaining on the surface of the substrate using the coating unit or various processing fluids. 6, cleaning nozzles are omitted for convenience of drawing.

5 and 6, the developing unit 80 includes a chamber 82, a processing container 100, a substrate supporting member 200, and a nozzle member 300.

The chamber 82 provides a sealed interior space, and a fan filter unit 89 is installed at the top. The fan filter unit 89 generates vertical airflow inside the chamber 82. The chamber 82 has a substrate entrance 84 formed on one surface 83 adjacent to the second moving path 160b, and a surface facing one surface on which the substrate entrance 84 is formed is an open surface opened for maintenance work. It consists of 85, and this open surface 85 is closed by the cover 86. As shown in FIG.

The fan filter unit 89 is a unit in which the filter and the air supply fan are modularized into one unit, and filter the clean air to supply the inside of the chamber 82. The clean air passes through the fan filter unit 89 and is supplied into the chamber 82 to form vertical airflow. This vertical airflow provides a uniform airflow over the substrate.

As shown in FIG. 6, the chamber 82 is partitioned into a process region PA and a utility region UA by the base 900. The base 900 is provided with a processing container 100 and a nozzle member 300. Although only a portion is shown in the drawing, in addition to the discharge line 141 and the exhaust line 148 connected to the processing container 100 in the utility area UA, various pipes connected to the driving unit and the nozzle member 300 of the lifting unit are located. In space, the process area is preferably isolated from the utility area UA to maintain high cleanliness.

The processing container 100 is installed in the base 900. The processing container 100 has a cylindrical shape with an open upper portion, and provides a process space for processing the substrate w. An open upper surface of the processing container 100 serves as a carrying-out and carrying-in passage of the substrate w. The processing container 100 is installed to surround the substrate support member 200. The processing vessel is for introducing and collecting fluid (developing liquid, cleaning liquid, dry gas, etc.) which is scattered on the rotating substrate (w) during the development and cleaning of the substrate (w) and the drying process. This not only prevents contamination of other external devices or surroundings, but also provides developer recovery and a uniform flow of air over the substrate.

The processing container 100 has an outer space a and an inner space b. The outer space a is provided by the outer wall 132 and the vertical partition wall 134 as a space into which the developer and gas scattered from the substrate w flow, and a discharge line for draining the developer on the bottom surface 136. 150 is connected. In addition, an exhaust line 152 for exhausting gas is connected to an inner space bottom surface of the processing container 100.

On the other hand, the outer wall 132 of the processing container is provided with an annular cover 160 that can be elevated. The cover 160 is elevated by the lifting unit 600 to carry the substrate w onto the spin head 210 or to carry out the processed substrate. The cover 160 is elevated by the lifting unit 600 to an up position higher than the substrate and a down position lower than the substrate.

The lifting unit 600 linearly moves the processing container 100 in the vertical direction. As the processing container 100 is moved up and down, the relative height of the processing container 100 with respect to the spin head 210 is changed. When the substrate W is loaded onto the spin head 210 or unloaded from the spin head 210, the cover 160 is lowered so that the spin head 210 protrudes to the top of the processing container 100.

In this embodiment, the substrate processing apparatus 1 changes the relative vertical position between the processing container 100 and the substrate supporting member 200 by vertically moving the processing container 100. However, the substrate processing apparatus 1 may change the relative vertical position between the processing container 100 and the substrate supporting member 200 by vertically moving the substrate supporting member 200.

The substrate support member 200 is provided inside the processing container 100. The substrate support member 200 supports the substrate W during the process, and may be rotated by the driver 240 to be described later as needed during the process. The substrate support member has a spin head 210 having a flat top surface on which the substrate w is placed. The spin head 210 may directly vacuum-adsorb the substrate through a vacuum line (not shown) formed therein so that the substrate is not separated from the spin head 210 by centrifugal force. Unlike the above-described structure, the substrate support member may mechanically fix the edge of the substrate from the side of the substrate through the chucking pins installed in the spin head 210. The spindle 220 is fixedly coupled to the lower surface of the spin head 210, and the spindle 220 is rotatably provided by the driver 240. Although not shown, the driver 240 includes a motor, a belt, a pulley, and the like for providing rotational force.

 The nozzle member 300 is for discharging the developing solution to the substrate, and the nozzle member 300 is an arm driver 340 for moving the nozzle 310, the arm 370 on which the nozzle 310 is installed, and the arm 370. And a controller 350 for controlling the arm driver 340. The nozzle 310 receives the developer from the treatment solution source 360 through the fluid channel (supply line) 362.

The arm 370 is horizontally movable by the nozzle driver 340 installed in the base 900 in the X direction, and the height can be adjusted in the vertical direction.

The driving operation of the arm driver 340 in the nozzle member 300 described above is controlled by the controller 350. In addition, the developer supply of the processing liquid supply source 360 is also controlled by the controller 350.

On the other hand, the nozzle member 300 has a nozzle bath 390 for cleaning the nozzle 310 when the nozzle 310 waits at the home position. The nozzle bath 390 removes the chemical liquid, etc., deposited on the nozzle end using nitrogen gas and a cleaning liquid.

7 is a diagram for explaining a developer discharge line of a nozzle with respect to a substrate.

As shown in FIG. 7, the developer discharge line K of the nozzle is a straight line connecting the center part from the edge of the substrate, and a predetermined distance from the center of rotation C of the substrate so that the developer is not directly discharged to the center of rotation C of the substrate. It is the line from the eccentricity off EC to the edge of the substrate. The eccentric EC is preferably located within 1-30 mm from the center of rotation C of the substrate.

In other words, the nozzle 310 discharges the developer on a line spaced 1-30 mm in parallel from the center line passing through the rotation center of the substrate.

8 is a perspective view showing a nozzle installed on an arm. 9 is a configuration diagram schematically showing the configuration of the nozzle. 10 and 11 are plan cross-sectional views and side cross-sectional views showing the configuration of the nozzle shown in FIG. 8. FIG. 12 is a sectional front view showing the configuration of the nozzle shown in FIG. 8, and FIG. 13 is a cross-sectional view taken along the 13-13 line shown in FIG. 13.

8 to 13, the developer discharge length of the nozzle 310 may be larger than the radius of the substrate and smaller than the diameter of the substrate, but in the embodiment of the present invention and the developer discharge length of the nozzle 310 is the radius of the substrate. Most preferably.

The nozzle 310 is coupled to the hinge axis 372 of the arm 370. The hinge shaft 372 is parallel to the longitudinal direction of the nozzle 310, and the arm 370 is provided with an angle adjustment driver 374 for rotating the nozzle 310. The nozzle 310 may be rotated about the hinge axis 372 by the angle adjustment driver 374 to adjust the discharge angle of the developer discharged from the nozzle 310.

The developer discharge angle of the nozzle 310 may be changed according to the discharge method of the developer to the substrate. For example, when the developer is discharged in a state where the nozzle 310 is in contact with the substrate as shown in FIG. 14A, it is preferable that the discharge angle of the developer is perpendicular to the surface of the substrate. And, as shown in FIG. 14B, when the developer is discharged while the nozzle 310 is spaced apart from the substrate, the discharge angle is adjusted to be inclined obliquely in the rotation direction of the substrate to prevent the developer from splashing into the nozzle 310 by falling. Can be.

In other words, the nozzle 310 has a discharge angle inclined obliquely in the rotational direction of the substrate so that the developer discharged to the substrate is unfolded in the opposite direction of the nozzle 310 by the centrifugal force of the substrate. That is, since the rotation direction of the substrate and the discharge direction of the developing solution are the same, the developer residue can be quickly discharged to the outside of the substrate. In addition, it is possible to minimize the contamination of the nozzle 310 with the developer rebounded from the substrate.

Thus, since the nozzle 310 of the present invention can adjust the discharge angle of the developing solution, a special effect capable of coping with both the liquid discharge method (in the case of FIG. 14A) and the separation process (in the case of eh 14b) can be achieved. Have

The nozzle 310 includes a nozzle body 320, a distributor 330, and a nozzle controller 338.

In the nozzle body 320, the first plate 322 and the second plate 322 overlap each other to form a body. The nozzle body 320 has a hinge portion 321 coupled to the hinge axis 372 of the arm at the top. A gap is provided between the first plate 322 and the second plate 324 to provide a discharge port S for discharging the developer in a band shape.

The discharge holes S are divided into individual discharge holes S1 having a thin and short slit shape, and integrated discharge holes S2 extending from the individual discharge holes S1, connected in one long slit shape, and the developer is finally discharged. Adjacent inner surfaces of the individual discharge ports S1 are interviewed. The longitudinal direction of the discharge port S is a direction perpendicular to the moving direction of the arm 370.

The first surface 322a of the first plate 322 is tightly coupled to the first surface 324a of the second plate 324. The distributor 330 is coupled to the second surface 322b of the first plate 322. The first plate 322 has inlets 323 formed at an upper end of the individual discharge port S1 and connected to branch flow paths 334 of the distributor 330.

The nozzle 310 according to the embodiment of the present invention has a shape in which the individual discharge openings S1 are widened downwards, and the two stages in which the integrated discharge holes S2 are integrated into one space below the individual discharge ports S1. Since the discharge port S has a structure, no developer solution gap occurs at the boundary between the individual discharge ports S1.

The distributor 330 may include a main flow passage 332 which receives the developer from the supply line 362 of the processing liquid supply source 360, and a branch flow passage 334 that connects each of the main flow passage 332 and the individual discharge ports S1. And the valves 336 that open and close the branch flow paths 334 according to a signal provided from the nozzle controller 338. The valves 336 are installed on the branch passage 334.

The nozzle 310 having the above-described configuration may not only be capable of liquid contact scanning, individual section ejection, and sequential ejection but also control of ejection start point and ejection end point of each section.

15 is a view showing various discharge methods from a nozzle according to an embodiment of the present invention.

Referring to FIG. 15 (a), the nozzle 310 of the present invention may sequentially discharge the developer from the individual discharge port close to the edge of the substrate to the individual discharge port corresponding to the center of the substrate. That is, in the nozzle 310 of the present invention, the discharge start time point of the individual discharge port to be discharged later is between the discharge start time point and the discharge end time point of the individual discharge port to pre-discharge, and the discharge end time point of the individual discharge port to be discharged after the individual discharge is pre-discharged. It is later than the discharge end time of the discharge port. The discharge amount decreases from the individual discharge port closest to the edge of the substrate to the center of the substrate.

The nozzle 310 of the present invention may individually discharge the developer from the edge of the substrate to the center in the above-described relay method. When the discharge is completed from the edge of the substrate to the center of the substrate, the individual discharge ports closest to the center of the substrate are repeatedly discharged to supply and block the developer.

This sequential discharging method discharges the developer onto the substrate w that is rotated while the nozzle 310 is fixed, and thus has the same effect as the scanning method of discharging the developer while the short slit nozzle is moved from the edge of the substrate to the center of the substrate. You can get it.

In the present invention, since the developer is discharged while scanning from the edge of the substrate to the center without moving the nozzle 310, problems such as vibration or transfer error generated during the nozzle movement can be improved.

As shown in Figure 15 (b), the nozzle 310 of the present invention can be repeated and cross-discharged in a specific section desired. In addition, as shown in FIG. 15C, the nozzle 310 of the present invention can continuously discharge in a specific section, and intermittently discharge the developer in another specific section.

As shown in FIGS. 15D and 15E, the individual discharge ports have the same discharge start time, but the discharge end time is sequentially controlled starting from the individual discharge holes near the edge of the substrate (or the discharge holes near the center of the substrate). By this, the development of the substrate can be expected to be uniform.

16A is a bottom view showing a part of the nozzle body. FIG. 16B is a view illustrating a mating surface of the first plate and the second plate on which the discharge holes are formed.

As shown in FIGS. 16A and 16B, each of the engaging surfaces of the first plate 322 and the second plate 324 (the first surface of the first plate and the first surface of the second plate) has a separate discharge port ( Concave portions 328 are formed to provide S1). The recess 328 is gradually widened from the branch passage 323 toward the integrated discharge port S2.

Each of the concave portions 328 formed in the first and second plates 322 and 324 has a straight first and second inner surface 328a and 328b corresponding to the long side of the individual discharge port S1, and a short side and is rounded. Third and fourth inner surfaces 328c and 328d.

Since the nozzle 310 of the present invention can discharge sections at each of the individual discharge ports S1, the discharge cross section of the developer to be discharged varies according to the shape of the individual discharge ports S1. The nozzle 310 of the present invention rounds both ends (third and fourth inner surfaces) 328c and 328d of the individual discharge ports S1, thereby agglomeration generated at both ends of the individual discharge ports S1 in the process of discharging the developer. The phenomenon and the slim phenomenon in which the center portion becomes thin except for both ends thereof can be minimized (see FIGS. 18A and 18B).

In the present invention, the first plate 322 and the second plate 324 can be exchanged with one having a concave portion 328 having various shapes, so that the nozzle 310 can adjust the injection amount of the developer or the shape of the developer to be discharged. It is provided. That is, when a plate having a deep depth of the recess 328 is provided, the ejection amount of the developing solution is increased by increasing the width of the ejection opening, and conversely, the ejection amount of the developing solution is reduced by narrowing the width of the ejection opening. In addition, the length of the interval discharge can be changed according to the length of the recess. In order to more precisely control the discharge section of the developer on the substrate, it is preferable that the length of the recess is short. On the other hand, since the first plate 322 and the second plate 324 is a plate in direct contact with the developer, it is preferable to make a high water-repellent resin material such as PCTFE and a hydrophilic material such as quartz.

17A is a view showing a discharge port having an extension. 17B is a view showing a mating surface of the first body and the second body in which the discharge port having the extension part is formed.

As shown in FIGS. 17A and 17B, the discharge body 320 forms an extension 329 wider than the width of the individual discharge ports S1 at the center of each of the individual discharge ports S1. The expansion part 329 is provided by forming triangular grooves in the first and second inner side surfaces 328a and 328b corresponding to the long sides of the individual discharge ports S1.

18 is a view showing a discharge cross section of the developer discharged from various discharge ports.

As shown in (a) of FIG. 18, when looking at the discharge cross section of the developer discharged from the individual discharge ports S1 having straight ends, agglomeration phenomenon occurs in which the discharge width is excessively widened as both ends are agglomerated by surface tension. In other words, the other part of the center except for both ends has a relatively thin width, resulting in a slimmer phenomenon.

This problem can be improved by changing the shape of the individual discharge port as follows. As shown in (b) of FIG. 18, by curvedly treating both ends 328c and 328d of the individual discharge ports S1, agglomeration phenomenon of the developing solution occurs at both ends, but the discharge width is reduced and is formed wide in the longitudinal direction. Slim developing area is reduced.

(C), (d), and (e) of FIG. 18 curved both ends of the individual discharge ports S1, and an extension 329 wider than the width of the individual discharge ports S1 was formed therein. The expansion part 329 is provided by forming grooves (a triangular groove, an elliptical groove, and a square groove) in the first and second inner side surfaces 328a and 328b corresponding to the long sides of the individual discharge ports S1. Thus, as shown in (c), (d), (e) of Figure 18, by forming the extension portion 329 in the center of the individual discharge port (S1), the discharge uniformity as a whole eliminates the slim phenomenon generated in the longitudinal direction Can improve the sex.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

1 is a schematic view showing a substrate processing apparatus of the present invention.

2 is a perspective view illustrating an example of a processor in the apparatus of FIG. 1.

3 is a plan view of the first processing chamber in the processing unit of FIG. 2;

4 is a plan view of a second processing chamber in the processing unit of FIG. 2;

5 and 6 are a plan view and a side view showing the configuration of the developing unit.

7 is a diagram for explaining a developer discharge line of a nozzle with respect to a substrate.

8 is a perspective view showing a nozzle installed on an arm.

9 is a configuration diagram schematically showing the configuration of the nozzle.

10 and 11 are plan cross-sectional views and side cross-sectional views showing the configuration of the nozzle shown in FIG. 8.

12 is a front sectional view showing a configuration of the nozzle shown in FIG. 8.

FIG. 13 is a cross-sectional view taken along line 13-13 of FIG. 12.

14A is a view showing a nozzle for discharging a developer in a state of being in contact with a substrate.

14B is a view showing a nozzle for discharging a developer in a state spaced apart from a substrate.

15 is a view showing various discharge methods from a nozzle according to an embodiment of the present invention.

16A is a bottom view showing a part of the nozzle body.

FIG. 16B is a view illustrating a mating surface of the first plate and the second plate on which the discharge holes are formed.

17A is a view showing a discharge port having an extension.

17B is a view showing a mating surface of the first body and the second body in which the discharge port having the extension part is formed.

18 is a view showing a discharge cross section of the developer discharged from various discharge ports.

<Description of Symbols for Main Parts of Drawings>

82 chamber 100 processing vessel

200 substrate support member 300 nozzle member

310: nozzle 340: arm drive unit

370: arm

Claims (17)

In the nozzle unit for discharging the processing liquid to the substrate: A nozzle for discharging the developer to the substrate; An arm on which the nozzle is installed; And An arm drive for moving the arm; The nozzle is A plurality of individual discharge holes having a slit shape in cross section and arranged in series in one direction; A distributor for distributing the processing liquid to each of the individual discharge ports; And And a nozzle control unit for controlling the distributor. In the nozzle unit for discharging the processing liquid to the substrate: A nozzle for discharging the developer to the substrate; An arm on which the nozzle is installed; And An arm drive for moving the arm; The nozzle is A plurality of individual discharge holes having a slit shape in cross section and arranged in series in one direction; A main flow path connected to the processing liquid supply source; Branch passages connected to the respective discharge ports from the main passage; Valves provided in each of the branch flow paths; And And a nozzle controller for controlling the valves. delete The method of claim 1, The distributor A main flow path connected to the processing liquid supply source; Branch flow paths connecting the main flow path and the individual discharge ports, respectively; And And a valve for opening and closing the branch flow paths according to a signal provided from the controller. The method of claim 1, Each of the individual outlets A nozzle unit characterized in that both ends of the longitudinal direction have a curved surface portion rounded. In the nozzle unit for discharging the processing liquid to the substrate: A nozzle for discharging the developer to the substrate; An arm on which the nozzle is installed; And An arm drive for moving the arm; The nozzle is A cross-sectional shape comprising a plurality of individual discharge holes made in a slit form and arranged in series in one direction, Each of the individual outlets Nozzle unit, characterized in that having a wider than the slit width in the center. In the nozzle unit for discharging the processing liquid to the substrate: A nozzle for discharging the developer to the substrate; An arm on which the nozzle is installed; And An arm drive for moving the arm; The nozzle is A cross-sectional shape comprising a plurality of individual discharge holes made in a slit form and arranged in series in one direction, The individual discharge ports are interviewed with each other adjacent to each other, And the sum of the total lengths of the individual discharge holes is equal to or larger than the radius of the substrate and smaller than the diameter of the substrate. In the nozzle unit for discharging the processing liquid to the substrate: A nozzle for discharging the developer to the substrate; An arm on which the nozzle is installed; And An arm drive for moving the arm; The nozzle is A plurality of individual discharge holes having a slit shape in cross section and arranged in series in one direction; And And an integrated discharge port through which the individual discharge ports are connected in one slit form and the processing liquid is finally discharged. In the nozzle unit for discharging the processing liquid to the substrate: Main flow path; Individual discharge ports through which the processing liquid is discharged; An integrated discharge hole in which each of the individual discharge holes is connected in one slit form and the processing liquid is finally discharged; Branch flow paths connecting the main flow path and the respective discharge ports; And nozzles installed in each of the branch flow paths. The method of claim 9, And the individual discharge ports are arranged in series along one direction. The method of claim 9, And each of the individual discharge ports has a curved surface portion rounded at both ends in the longitudinal direction thereof. The method according to claim 9 or 11, And each of the individual ejection openings has an extension portion wider than a slit width of the individual ejection opening in the center. In the substrate processing apparatus: A substrate support member including a spin head on which the substrate is placed; A processing liquid source for supplying a processing liquid to be provided to the substrate surface; A nozzle unit in communication with the processing liquid supply source through at least one fluid channel; The nozzle unit A nozzle for discharging the processing liquid to the substrate through a plurality of individual discharge ports having a slit shape in cross section and arranged in series in one direction; An arm supporting the nozzle; A nozzle drive for moving the arm, The nozzle is And an integrated discharge port through which the individual discharge ports are connected in one slit form and the processing liquid is finally discharged. delete In the substrate processing apparatus: A substrate support member including a spin head on which the substrate is placed; A processing liquid source for supplying a processing liquid to be provided to the substrate surface; A nozzle unit in communication with the processing liquid supply source through at least one fluid channel; The nozzle unit A nozzle for discharging the processing liquid to the substrate through a plurality of individual discharge ports having a slit shape in cross section and arranged in series in one direction; An arm supporting the nozzle; A nozzle drive for moving the arm, The nozzle is rotatably installed on the arm for adjusting the discharge angle of the processing liquid, The arm further includes an angle adjusting driver for adjusting the discharge angle of the nozzle. In the substrate processing apparatus: A substrate support member including a spin head on which the substrate is placed; A processing liquid source for supplying a processing liquid to be provided to the substrate surface; A nozzle unit in communication with the processing liquid supply source through at least one fluid channel; The nozzle unit A nozzle for discharging the processing liquid to the substrate through a plurality of individual discharge ports having a slit shape in cross section and arranged in series in one direction; An arm supporting the nozzle; A nozzle drive for moving the arm, The nozzle is A distributor for distributing the processing liquid received from the processing liquid supply source to each of the individual discharge ports; And And a nozzle control unit for controlling the distributor. The method of claim 16, The distributor A main flow path connected to the processing liquid supply source; Branch flow paths connecting the main flow path and the individual discharge ports, respectively; And And valves for opening and closing the branch flow paths according to a signal provided from the nozzle controller.

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