KR20180024703A - Apparatus and method for treating substrate - Google Patents

Abstract

The present invention relates to an apparatus and a method for treating a substrate. The apparatus for treating a substrate according to one embodiment of the present invention comprises: a substrate support member for supporting a substrate; a rotation driving member for driving the substrate support member; a first supply unit having a first nozzle supplying a first treatment liquid to the substrate supported by the substrate support member; and a second supply unit having a second nozzle supplying a second treatment liquid to the substrate, wherein the second nozzle supplies the second treatment liquid to the substrate at a location spaced from a second supply spot where the second treatment liquid is supplied on the substrate when viewed from the top thereof.

Description

[0001] APPARATUS AND METHOD FOR TREATING SUBSTRATE [0002]

The present invention relates to an apparatus and a method for processing a substrate.

Various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed to manufacture semiconductor devices. Among these processes, a deposition and spin-on hard mask (SOH) process is used as a process for forming a film on a substrate.

In general, a deposition process is a process of forming a film on a substrate by depositing a process gas on a substrate, and a coating process is a process of forming a liquid film by supplying a process liquid to the center of the substrate.

Fig. 1 is a sectional view showing a general substrate processing apparatus 40. Fig. Referring to FIG. 1, the process of supplying the process liquid as in the application process is carried out in such a manner that the nozzles 41 and 42 are positioned in the upper portion of the supply position on the substrate W to which the process liquid is supplied, . Therefore, when different process liquids in one chamber 40 are sequentially supplied to the same position on the substrate W through the respective nozzles 41 and 42, There is a problem in that it takes time to previously move the nozzle 41 for ejecting the process liquid and the nozzle 42 for ejection in order to eject the process liquid by using the other nozzle 42 after ejection. This causes a decrease in the production efficiency of the substrate W.

The present invention is intended to provide an apparatus and a method in which movement of a nozzle is not required when different process liquids are supplied onto a substrate through respective nozzles.

It is another object of the present invention to provide an apparatus and a method for increasing the production efficiency for producing a substrate.

The problems to be solved by the present invention are not limited thereto, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

The present invention provides a substrate processing apparatus. According to one embodiment, a substrate processing apparatus includes: a substrate supporting member for supporting a substrate; A rotation driving member for rotating the substrate support member; A first supply unit having a first nozzle for supplying a first processing solution onto a substrate supported by the substrate supporting member; And a second supply unit having a second nozzle for supplying a second process liquid onto the substrate, wherein the second nozzle has a second supply port for supplying the second process liquid onto the substrate, And the second processing liquid is supplied onto the substrate at a position spaced apart from the point.

And the second nozzle supplies the second processing liquid at a position deviated from the upper surface of the substrate when viewed from above.

And the second nozzle can spray the second treatment liquid in the horizontal direction.

The first supply point and the second supply point where the first process liquid is supplied to the substrate may be the same or adjacent to each other.

The first nozzle may supply the processing liquid to the substrate from the upper side in the vertical direction at the first supply point.

The first treatment liquid may be a coating liquid for forming a film on a substrate, and the second treatment liquid may be a chemilicate for etching a film formed on the substrate.

The first process liquid may be a photoresist (PR) liquid or a spin-on hard mask (SOH) liquid, and the second process liquid may be provided as a thinner.

Alternatively, the substrate processing apparatus may further include: an index module; A process module, the index module comprising: a load port in which a container for receiving a substrate is placed; And a transfer frame provided with an index robot for transferring the substrate between the container and the processing module, the processing module comprising: a processing chamber; And a transfer chamber provided with a main robot for transferring a substrate between the process chambers, wherein the process chamber includes a first chamber for processing the substrate by supplying a first process solution and a second process solution to the substrate, The chamber includes a substrate supporting member for supporting the substrate; A rotation driving member for rotating the substrate support member; A first supply unit having a first nozzle for supplying the first processing solution onto a substrate supported by the substrate supporting member; And a second supply unit having a second nozzle for supplying the second process liquid onto the substrate, wherein the second nozzle has a second nozzle for supplying the second process liquid onto the substrate, And the second processing liquid is supplied onto the substrate at a position spaced apart from the feeding point.

And the second nozzle supplies the second processing liquid at a position deviated from the upper surface of the substrate when viewed from above.

And the second nozzle can spray the second treatment liquid in the horizontal direction.

The first supply point and the second supply point where the first process liquid is supplied to the substrate may be the same or adjacent to each other.

The first nozzle may supply the processing liquid to the substrate from the upper side in the vertical direction at the first supply point.

The process chamber may further include a second chamber for supplying a third process liquid to the substrate to process the substrate.

The apparatus further includes a controller, wherein the controller is configured to perform the steps of: supplying the third process liquid onto the substrate; supplying the second process liquid onto the substrate; and supplying the first process liquid onto the substrate The process module may be controlled to sequentially perform the process.

The first treatment liquid and the third treatment liquid may be a coating liquid for forming a film on a substrate and the second treatment liquid may be a chemilicate for etching a film formed on the substrate.

The first treatment liquid and the third treatment liquid are provided as a photoresist (PR) or a spin-on hard mask (SOH) liquid, and the second treatment liquid is supplied to a thinner Can be provided.

The present invention also provides a substrate processing method for processing a substrate. According to one embodiment, a substrate chucking method includes: a coating step of supplying a coating liquid onto a substrate on which a pattern is formed in a process chamber to form a coating layer; Wherein the step of applying and the step of etching are performed in the same chamber, and in the etching step, the step of forming the uppermost layer Is supplied from a nozzle provided at a position spaced apart from the supply point of the camber supplied to the substrate on the substrate.

In the etching process, the nozzle feeds the cham- ber at a position deviated from the top surface of the substrate when viewed from above.

In the etching process, the nozzle can spray the camber in a horizontal direction.

In the coating step, a supply point of the coating liquid on which the coating liquid is supplied onto the substrate and a supply point of the camber supplied to the substrate in the etching process may be the same or adjacent to each other.

In the application step, the application liquid may be supplied from a nozzle positioned vertically above the application liquid supply point.

The coating liquid may be a photoresist (PR) liquid or a spin-on hard mask (SOH) liquid, and the chemical may be provided as a thinner.

The etching process may be performed after the application process is performed.

Alternatively, the application process may be performed after the etching process is performed.

According to an embodiment of the present invention, the apparatus and method of the present invention may not require the movement of the nozzle when dispensing a different process liquid onto the substrate through each nozzle.

In addition, according to an embodiment of the present invention, the apparatus and method of the present invention can increase production efficiency of producing a substrate.

1 is a sectional view showing a general substrate processing apparatus.
2 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 3 is a view of the substrate processing apparatus of FIG. 2 viewed from the direction AA.
4 is a cross-sectional view of the liquid processing chamber of FIG. 2 viewed from the front.
5 is a plan view of the liquid processing chamber of Fig.
Figure 6 is a perspective view showing the bake chamber of Figure 2;
7 is a plan view showing the bake chamber of Fig.
8 is a cross-sectional view showing the bake chamber of Fig.
9 is a flowchart showing a substrate processing method according to an embodiment of the present invention.
10 to 12 are sectional views showing the substrate W on which the first coating process, the etching process and the second coating process of FIG. 9 have been performed, respectively.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

The facility of this embodiment is used to perform a process of forming a liquid film by supplying a process liquid to a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the facility of this embodiment is used to perform a process of rotating a substrate and supplying a process liquid to the center of the substrate to form a liquid. Hereinafter, a case where a wafer is used as a substrate will be described as an example. However, the substrate may be various types of substrates such as a flat panel display panel and a photomask in addition to a semiconductor wafer. Alternatively, the substrate processing apparatus according to the embodiments of the present invention can be applied to various facilities for processing a substrate by supplying a liquid to the substrate.

2 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention. FIG. 3 is a view of the substrate processing apparatus of FIG. 2 viewed from the direction A-A. 2 and 3, the substrate processing apparatus 1 includes an index module 10, a processing module 20, and a controller 30. The index module 10 has a load port 120 and a transfer frame 140. The load port 120, the transfer frame 140, and the process module 20 are sequentially arranged in a line. The direction in which the load port 120, the transfer frame 140 and the processing module 20 are arranged is referred to as a first direction 12 and a direction perpendicular to the first direction 12 Direction is referred to as a second direction 14 and a direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as a third direction 16. [

The load port 120 is seated with a carrier 18 provided in a container in which the substrate W is housed. A plurality of load ports 120 are provided, and they are arranged in a line along the second direction 14. The number of load ports 120 may increase or decrease depending on the process efficiency and footprint conditions of the process module 20 and the like. The carrier 18 is provided with a plurality of slots (not shown) for accommodating the substrates W horizontally with respect to the paper surface. As the carrier 18, a front opening unified pod (FOUP) may be used.

The processing module 20 has a buffer unit 220, a transfer chamber 240, and a plurality of process chambers 260 and 280. Process chambers 260 and 280 include a liquid processing chamber 260 and a bake chamber 280. The transfer chamber 240 is disposed such that its longitudinal direction is parallel to the first direction 12. Liquid processing chambers 260 are disposed on one side of the transfer chamber 240 and bake chambers 280 are disposed on the other side. The liquid processing chambers 260 and the bake chambers 280 may be provided to be symmetrical with respect to the transfer chamber 240. A plurality of liquid processing chambers 260 are provided on one side of the transfer chamber 240. Some of the liquid processing chambers 260 are disposed along the longitudinal direction of the transfer chamber 240. In addition, some of the liquid processing chambers 260 are arranged to be stacked on each other. That is, at one side of the transfer chamber 240, the liquid processing chambers 260 may be arranged in an array of A X B. Where A is the number of liquid processing chambers 260 provided in a row along the first direction 12 and B is the number of liquid processing chambers 260 provided in a row along the third direction 16. [ When four or six liquid processing chambers 260 are provided on one side of the transfer chamber 240, the liquid processing chambers 260 may be arranged in an array of 2 X 2 or 3 X 2. The number of the liquid processing chambers 260 may increase or decrease.

According to one embodiment, the liquid processing chamber 260 includes a first chamber and a second chamber.

The first chamber supplies the first processing solution and the second processing solution to the substrate W to process the substrate. The first chamber includes a first supply unit having a first nozzle for supplying a first process liquid onto the substrate W and a second supply unit having a second nozzle for supplying a second process liquid onto the substrate.

The second chamber supplies the third processing solution to the substrate W to process the substrate.

Depending on the sequence of processes performed in the first chamber and the second chamber and whether or not the etching process S30 is carried out in the first chamber, the first chamber may include a first liquid processing chamber 260a and a second liquid processing chamber 260b , And the second chamber may correspond to the other of the first liquid processing chamber 260a and the second liquid processing chamber 260b.

For example, when the first chamber performs the first coating step S10 and the etching step S30, which will be described below, the first chamber corresponds to the first liquid processing chamber 260a having the etching unit 940 And the second chamber may correspond to the second liquid processing chamber 260b where the etching unit 940 is not provided. In this case, the first treatment liquid may be a first coating liquid, the second treatment liquid may be a camical, and the third treatment liquid may be a second coating liquid.

Alternatively, when the first chamber performs the etching process S30 and the second application process S40, which will be described below, the first chamber corresponds to the second liquid processing chamber 260b having the etching unit, The chamber may correspond to a first liquid processing chamber 260a not provided with an etching unit. In this case, the first treatment liquid may be a second coating liquid, the second treatment liquid may be a camical, and the third treatment liquid may be a first coating liquid.

A plurality of first liquid processing chambers 260a and second liquid processing chambers 260b are provided so as to be arranged in the first direction 12, respectively. The first liquid processing chamber 260a and the second liquid processing chamber 260b may be provided so as to be laminated to each other and the first liquid processing chamber 260a may be provided above the second liquid processing chamber 260b. Alternatively, the second liquid processing chamber 260b may be provided on top of the first liquid processing chamber 260a.

Unlike the above, the liquid processing chamber 260 may be provided as a single layer on one side and on both sides of the transfer chamber 240. In this case, the first liquid processing chamber 260a and the second liquid processing chamber 260b may be provided at the same height with each other.

On the other side of the transfer chamber 240, a plurality of bake chambers 280 are provided. The bake chamber 280 may be provided in a larger number than the liquid processing chamber 260. Some of the bake chambers 280 are disposed along the longitudinal direction of the transfer chamber 240. Further, some of the bake chambers 280 are arranged to be stacked on each other. That is, at the other side of the transfer chamber 240, the bake chambers 280 may be arranged in an array of C X Ds. Where C is the number of bake chambers 280 provided in a row along the first direction 12 and D is the number of bake chambers 280 provided in a row along the third direction 16. When four or six bake chambers 280 are provided on the other side of the transfer chamber 240, the bake chambers 280 may be arranged in an array of 2 X 2 or 3 X 2. The number of the bake chambers 280 may increase or decrease. According to one embodiment, when the first liquid processing chamber 260a and the second liquid processing chamber 260b are provided as shown in FIGS. 2 and 3, a part of the bake chamber 280 is connected to the first liquid processing chamber 260a, And arranged along the first direction. Another portion of the bake chamber 280 is located in the second direction from the second liquid processing chamber 260b and is arranged along the first direction. The transfer chamber 240 is positioned between a portion of the bake chamber and the first liquid processing chamber 260a and between the other portion of the bake chamber 280 and the second liquid processing chamber 260b. Unlike the above, the bake chambers 280 may be provided as a single layer.

The buffer unit 220 is disposed between the transfer frame 140 and the transfer chamber 240. The buffer unit 220 provides a space for the substrate W to stay before the transfer of the substrate W between the transfer chamber 240 and the transfer frame 140. [ In the buffer unit 220, a slot (not shown) in which the substrate W is placed is provided. A plurality of slots (not shown) are provided to be spaced along the third direction 16 from each other. The buffer unit 220 is opened on the side facing the transfer frame 140 and on the side facing the transfer chamber 240.

The transfer frame 140 is provided with an index rail 142 and an index robot 144. The index rail 142 is provided so that its longitudinal direction is parallel to the second direction 14. The index robot 144 carries the substrate W between the carrier 18 seated in the load port 120 and the buffer unit 220 of the processing module 20. The index robot 144 is installed on the index rail 142 and is linearly moved along the index rail 142 in the second direction 14. The index robot 144 has a base 144a, a body 144b, and an index arm 144c. The base 144a is installed so as to be movable along the index rail 142. The body 144b is coupled to the base 144a. The body 144b is provided to be movable along the third direction 16 on the base 144a. Also, the body 144b is provided to be rotatable on the base 144a. The index arm 144c is coupled to the body 144b and is provided to be movable forward and backward relative to the body 144b. A plurality of index arms 144c are provided and each is provided to be individually driven. The index arms 144c are stacked in a state of being spaced from each other along the third direction 16. Some of the index arms 144c are used to transfer the substrate W from the processing module 20 to the carrier 18 and another portion of the index arms 144c from the carrier 18 to the processing module 20, ). ≪ / RTI > This can prevent the particles generated from the substrate W before the process processing from adhering to the substrate W after the process processing in the process of loading and unloading the substrate W by the index robot 144. [

The transfer chamber 240 is provided with a guide rail 242 and a main robot 244. The main robot 244 transports the substrate W between the buffer unit 220, the first liquid processing chamber 260a, the second liquid processing chamber 260b and the bake chamber 280. [ The guide rails 242 are arranged so that their longitudinal directions are parallel to the first direction 12. The main robot 244 is installed on the guide rails 242 and is linearly moved along the first direction 12 on the guide rails 242. The main robot 244 has a base 244a, a body 244b, and a main arm 244c. The base 244a is installed so as to be movable along the guide rail 242. The body 244b is coupled to the base 244a. The body 244b is provided to be movable along the third direction 16 on the base 244a. Body 244b is also provided to be rotatable on base 244a. The main arm 244c is coupled to the body 244b, which is provided for forward and backward movement relative to the body 244b. A plurality of main arms 244c are provided and each is provided to be individually driven. The main arms 244c are stacked in a state of being spaced from each other along the third direction 16.

In the liquid processing chamber 260, a film forming process for forming a film on the substrate W is performed. Some of the liquid processing chambers 260 have the same structure and configuration. However, the liquid processing chamber 260 may have a different structure depending on the kind of the film forming process to be performed. Optionally, the liquid processing chambers 260 are divided into a plurality of groups, and the liquid processing chambers 260 belonging to the same group have the same structure and structure, and the liquid processing chambers 260 belonging to different groups The structures may be provided differently from each other.

According to one embodiment, the first liquid processing chamber 260a performs the first coating step S10. The first coating step S10 is a step of forming a first coating layer 15 by supplying a first coating liquid onto a substrate W on which a pattern 13 is formed. And the second liquid processing chamber 260b performs a second coating step (S40). The second coating step S40 is a step of forming the second coating layer 17 by supplying the second coating liquid onto the substrate W on which the pattern 13 is formed. For example, the first coating liquid and the second coating liquid may be provided as a sensitizing liquid such as a photoresist (PR) or a spin-on hard mask liquid. The first coating liquid and the second coating liquid may be provided in a photoresist (PR) solution having a different component and / or composition ratio from each other. Alternatively, the first coating liquid and the second coating liquid may be provided in a spin-on hard mask liquid having different component and / or composition ratios from each other.

The etching process S30 is performed in either the first liquid processing chamber 260a or the second liquid processing chamber 260b. In the etching step S30, a first coating layer 15 located on the upper surface of the pattern 13 is exposed so that the upper surface of the pattern 13 is exposed by supplying a chemical to the substrate W on which the first coating step S10 has been performed. . For example, a camel can be provided as a thinner. Alternatively, the chemical may be provided with various kinds of fluids capable of etching the first application layer 15 and the second application layer 17.

The first coating step (S10), the second coating step (S40) and the etching step (S30) may be performed at normal pressure. The first coating step S10, the second coating step S40 and the etching step S30 are carried out in such a manner that the first coating liquid, the second coating liquid or the chemical liquid is supplied to the substrate W in a state in which the substrate W is rotated . ≪ / RTI >

Details of each process will be described together with the substrate processing method of the present invention with reference to FIGS. 9 to 12. FIG.

FIG. 4 is a cross-sectional view of the liquid processing chamber 260 of FIG. 2 viewed from the front, and FIG. 5 is a plan view of the liquid processing chamber 260 of FIG. The liquid processing chamber 260 shown in FIG. 2 may be the first liquid processing chamber 260a or the second liquid processing chamber 260b. The first liquid processing chamber 260a and the second liquid processing chamber 260b may be provided with the same configuration and structure except for the kind of the coating liquid supplied from the coating unit and the presence or absence of the etching unit 940. [ 4 and 5, the liquid processing chamber 260 includes a housing 810, an airflow providing unit 820, a substrate supporting unit 830, a processing vessel 850, a lift unit 890, 920), and an etching unit 940.

The housing 810 is provided in a rectangular tubular shape having a space 812 therein. An opening (not shown) is formed at one side of the housing 810. The opening serves as an inlet through which the substrate W is carried in and out. The opening is provided with a door, and the door opens and closes the opening. When the substrate processing process is performed, the door is closed to seal the inner space 812 of the housing 810. An inner exhaust port 814 and an outer exhaust port 816 are formed on the lower surface of the housing 810. The airflow formed in the housing 810 is exhausted to the outside through the inner exhaust port 814 and the outer exhaust port 816. According to one example, the airflow provided in the processing vessel 850 is exhausted through the inner exhaust port 814, and the airflow provided outside the processing vessel 850 can be exhausted through the outer exhaust port 816.

The airflow providing unit 820 forms a downward flow in the inner space of the housing 810. The airflow providing unit 820 includes an airflow supply line 822, a fan 824, and a filter 826. The airflow supply line 822 is connected to the housing 810. The air supply line 822 supplies external air to the housing 810. The filter 826 links the air provided from the airflow supply line 822 to the filter 826. The filter 826 removes impurities contained in the air. The fan 824 is mounted on the upper surface of the housing 810. The fan 824 is located in a central region in the upper surface of the housing 810. The fan 824 forms a downward flow in the inner space of the housing 810. When air is supplied to the fan 824 from the airflow supply line 822, the fan 824 supplies air in a downward direction.

The substrate support unit 830 supports the substrate W in the inner space of the housing 810. The substrate support unit 830 rotates the substrate W. The substrate support unit 830 includes a spin chuck 832 and rotation drive members 834 and 836. The spin chuck 832 is provided with a substrate support member 832 for supporting the substrate. The spin chuck 832 is provided to have a circular plate shape. The substrate W contacts the upper surface of the spin chuck 832. The spin chuck 832 is provided so as to have a smaller diameter than the substrate W. [ According to one example, the spin chuck 832 can vacuum-suck the substrate W and chuck the substrate W. Alternatively, the spin chuck 832 may be provided with an electrostatic chuck for chucking the substrate W using static electricity. The spin chuck 832 can also chuck the substrate W by physical force.

The rotation drive members 834 and 836 include a rotation shaft 834 and a driver 836. The rotating shaft 834 supports the spin chuck 832 below the spin chuck 832. The rotary shaft 834 is provided such that its longitudinal direction is directed up and down. The rotation shaft 834 is provided so as to be rotatable about its central axis. The driver 836 provides a driving force such that the rotation shaft 834 is rotated. For example, the driver 836 may be a motor capable of varying the rotational speed of the rotating shaft.

The processing vessel 850 is located in the interior space 812 of the housing 810. The processing vessel 850 provides a processing space therein. The processing vessel 850 is provided so that the upper portion thereof has an open cup shape. The processing vessel 850 includes an inner cup 852 and an outer cup 862.

The inner cup 852 is provided in the shape of a circular plate surrounding the rotation shaft 834. The inner cup 852 is positioned to overlap the inner vent 814 when viewed from above. The upper surface of the inner cup 852 is provided such that its outer and inner regions are inclined at different angles from each other. According to one example, the outer region of the inner cup 852 is oriented downwardly away from the substrate support unit 830, and the inner region is oriented in an upward sloping direction away from the substrate support unit 830 Lt; / RTI > A point where the outer region and the inner region of the inner cup 852 meet with each other is vertically provided in correspondence with the side end portion of the substrate W. [ The upper surface area of the inner cup 852 is provided to be rounded. The upper surface area of the inner cup 852 is provided downwardly concave. The upper surface area of the inner cup 852 may be provided in a region where the coating liquid supplied from the coating unit 920 and the processing liquid such as the camber supplied from the etching unit 940 flow.

The outer cup 862 is provided to have a cup shape that encloses the substrate support unit 830 and the inner cup 852. The outer cup 862 has a bottom wall 864, a side wall 866, a top wall 870, and an inclined wall 870. The bottom wall 864 is provided to have a circular plate shape having a hollow. A collection line 865 is formed in the bottom wall 864. The recovery line 865 recovers the treatment liquid supplied on the substrate W. [ The treatment liquid recovered by the recovery line 865 can be reused by an external liquid recovery system. The side wall 866 is provided to have a circular tubular shape surrounding the substrate supporting unit 830. The side wall 866 extends in a vertical direction from the side edge of the bottom wall 864. The side wall 866 extends upwardly from the bottom wall 864.

The inclined wall 870 extends inward of the outer cup 862 from the top of the side wall 866. The inclined wall 870 is provided so as to approach the substrate supporting unit 830 upward. The inclined wall 870 is provided so as to have a ring shape. The upper end of the inclined wall 870 is positioned higher than the substrate W supported on the substrate supporting unit 830. [

The elevating unit 890 lifts the inner cup 852 and the outer cup 862, respectively. The elevating unit 890 includes an inside moving member 892 and an outside moving member 894. The inner moving member 892 lifts the inner cup 852 and the outer moving member 894 moves the outer cup 862 up and down.

The application unit 920 performs an application process of forming a thin film. Wherein the thin film is provided as a liquid film formed by the liquid. The application unit 920 supplies the application liquid onto the substrate W. [ When the processing chamber of Fig. 4 is the first liquid processing chamber 260a, the application unit 920 is provided as the first application unit 920a. Alternatively, when the processing chamber of Fig. 4 is the second liquid processing chamber 260b, the application unit 920 is provided as the second application unit 920b. The first coating unit 920a supplies the first coating liquid onto the substrate W to perform the first coating process S10. The second coating unit 920b supplies the second coating liquid onto the substrate W to perform the second coating process S40. The application unit 920 includes a guide member 922, an arm 924, and a dispensing nozzle 926. The guide member 922 and the arm 924 move the application nozzle 926 to the process position and the standby position. Here, the process position is a position where the discharge end of the application nozzle 926 faces the center of the substrate W, and the standby position is defined as a position out of the process position. The guide member 922 includes a guide rail 922 for moving the arm 924 in the horizontal direction. The guide rails 922 are located on one side of the processing vessel 850. The guide rails 922 are provided so that their longitudinal directions are oriented in the horizontal direction. According to an example, the longitudinal direction of the guide rail 922 may be provided so as to be directed in a direction parallel to the first direction 12. An arm 924 is provided on the guide rail 922. The arm 924 can be moved by a linear motor provided inside the guide rail 922. The arm 924 is provided so as to face the longitudinal direction perpendicular to the guide rail 922 when viewed from above. One end of the arm 924 is mounted on the guide rail 922. A coating nozzle 926 is provided on the bottom surface of the other end of the arm 924. The application nozzle 926 supplies the first coating liquid or the second coating liquid in the vertical direction from the upper side to the lower side in the vertical direction at a position adjacent to the center or the center of the substrate W placed on the spin chuck 832. Optionally, the arm 924 may be coupled to a rotational axis 834 whose longitudinal direction faces the third direction 16 and may be rotated.

The etching unit 940 supplies the substrate W with a chemical to perform the etching process. Thus, the etching unit 940 corresponds to the second supply unit described above. The etching unit 940 includes a chemical nozzle 946. The chemical nozzle 946 discharges the chemical on the substrate W. The chamfered nozzle 946 feeds the chammer onto the substrate W at a position spaced apart from the feeding point where the chaser is fed onto the substrate W placed on the spin chuck 832 as viewed from above. According to one embodiment, the chamfered nozzle 946 feeds the camical at a position deviated from the top surface of the substrate W placed on the spin chuck 832, as viewed from above. For example, a chemical nozzle 946 may be provided fixedly to the exterior of the processing vessel 850. The camical nozzle 946 can inject the camber in the horizontal direction. In this case, the injected camber is lowered by gravity and supplied onto the substrate placed on the spin chuck 832. As described above, since the camical knife 946 is provided so as to supply the camber on the substrate W at a position where it is not interfered with the application nozzle 926, the first coating liquid or the second coating liquid is supplied The supply of the first coating liquid and the supply of the second coating liquid after the supply of the camber are performed so that the coating nozzle 926 and the camber The movement of the nozzle 946 is not required. The application unit 920, the etching unit 940 and the rotation drive members 834 and 836 are controlled by the controller 30. [ The etching unit 940 may be provided in one of the first liquid processing chamber 260a and the second liquid processing chamber 260b.

Each of the bake chambers 280 has the same structure. However, the bake chamber 280 may have a different structure depending on the type of the film forming process to be performed or the difference in the amount of exhaust due to the height difference between the chambers 810. Alternatively, the bake chambers 280 are divided into a plurality of groups, and the substrate processing apparatuses provided to the bake chamber 280 belonging to the same group are identical to each other, and the substrate processing apparatuses 280 provided in the bake chamber 280, May be provided differently from each other.

The bake chamber 280 may perform a heat treatment process for heating the substrate W to a predetermined temperature and a cooling process for cooling the substrate W after each heat treatment process.

Figure 6 is a perspective view showing the bake chamber 280 of Figure 2. 7 is a plan view showing the bake chamber 280 of Fig. 8 is a cross-sectional view showing the bake chamber 280 of Fig. 6 through 8, the bake chamber 280 includes a housing 1100, a transfer unit 1200, a heating unit 1300, and a cooling unit 1400.

The housing 1100 provides a processing space therein for processing such as a baking process. The housing 1100 is provided in a rectangular parallelepiped shape. The housing 100 includes a first sidewall 1111, a second sidewall 1112, a third sidewall 1113, and a fourth sidewall 1114.

The first side wall 1111 is provided on one side of the housing 1100. The first sidewall 1111 is formed with an entrance 1116 through which the substrate W enters and exits. The entry port 1116 provides a passage through which the substrate W is moved.

The second side wall 1112 is formed on the opposite side of the first side wall 1111. The second side wall 1112 is provided in parallel with the first side wall 1111. A third sidewall 1113 is provided between the first sidewall 1111 and the second sidewall 1112. The third sidewall 1113 is provided perpendicularly to the first sidewall 1111 and the second sidewall 1112, respectively. A fourth sidewall 1114 is provided between the first sidewall 111 and the second sidewall 1112. A fourth sidewall 1114 is provided perpendicularly to the first sidewall 1111 and the third sidewall 1113, respectively. The fourth side wall 1114 is provided in parallel with the third side wall 1113.

The transfer unit 1200 moves the substrate W between the heating unit 1300 and the cooling unit 1400 in the housing 1100. The transport unit 1200 includes a transport plate 1210, a support arm 1220, a support ring 1230, and a drive member 1270.

The substrate W is placed on the transfer plate 1210. The transport plate 1210 is provided in a circular shape. The transfer plate 1210 is provided with the same size as the substrate W. [ The transfer plate 1210 is made of a metal material having good thermal conductivity. A guide hole 1250 is formed in the transport plate 1210. The guide hole 1250 is a space for accommodating the lift pin 1315. Guide holes 1250 are provided extending from the outside of the conveying plate 1210 to the inside thereof. The guide hole 1250 prevents interference or collision with the lift pin 1315 when the conveying plate 1210 is moved.

The support arm 1220 is fixedly coupled to the transfer plate 1210. A support arm 1220 is provided between the transfer plate 1210 and the drive member 1270.

A support ring 1230 is provided wrapping around the conveying plate 1210. The support ring 1230 supports the edge of the transfer plate 1210. The support ring 1230 serves to support the substrate W such that the substrate W is placed in the correct position after the substrate W is placed on the transfer plate 1210.

The driving member 1270 allows the transport plate 1210 to be transported or transported. The driving member 1270 is provided so as to be able to linearly move or vertically drive the transfer plate 1210.

The heating unit 1300 supports the substrate to heat the substrate. The heating unit 1300 includes a plate 1311, a pin hole 1312, a heater 1313, a lift pin 1315, a cover 1317, and a driver 1319.

The plate 1311 is provided in a cylindrical shape. The plate 1311 may be provided with a material having good thermal conductivity. For example, the plate 1311 may be made of a metal material. A pin hole 1312 is formed in the upper portion of the plate 1311 to receive a lift pin 1315. [

The heater 1313 heats the substrate W. The heater 1313 is provided inside the plate 1311. For example, the heater 1313 may be installed in the plate 1311 as a heating coil. Alternatively, the plate 1311 may be provided with heating patterns. Since the heater 1313 is provided inside the plate 1311, the plate 1311 is preferentially heated before the substrate is heated.

The pin hole 1312 is provided for the moving path of the lift pin 1315 when the lift pin 1315 moves the substrate W up and down. A pin hole 1312 is provided on the top of the plate 1311, and a plurality of pins can be provided.

The lift pins 1315 are moved up and down by a lifting mechanism (not shown). The lift pins 1315 can seat the substrate W on the plate 1311. [ The lift pins 1315 can raise and lower the substrate W to a position spaced apart from the plate 1311 by a predetermined distance.

The cover 1317 is located on the top of the plate 1311. The cover 1317 is provided in a cylindrical shape. The cover 1317 provides a heating space therein. The cover 1317 moves to the upper portion of the plate 1311 by the driver 1319 when the substrate W is moved to the plate 1311. [ The cover 1317 moves the substrate W downward by the driver 1319 when heated by the plate 1311 to form a heating space in which the substrate W is heated.

The driver 1319 is fixedly coupled to the cover 1317 by a support portion 1318. [ The driver 1319 moves the cover 1317 upward and downward when it is conveyed or conveyed to the plate 1311 of the substrate W. [ In one example, the actuator 1319 may be provided as a cylinder actuator.

The cooling unit 1400 serves to cool the plate 1311 or the processed substrate W. [ The cooling unit 1400 is located inside the housing 1100. The cooling unit 1400 is positioned closer to the first sidewall 1111 than the second sidewall 1112. The cooling unit 400 includes a cooling plate 410. [

Cooling plate 1410 cools the substrate. The cooling plate 1410 may be provided in a circular shape. The cooling plate 1410 may be provided in a size corresponding to the substrate. A cooling channel may be provided inside the cooling plate 1410. Cooling water is supplied to the cooling passage to cool the substrate W. The transfer plate 1210 is placed on the cooling plate 1410 while the substrate is held on the transfer plate 1210, and the substrate can be cooled.

The controller 30 controls the process module 20 such that the first coating process S10, the etching process S30 and the second coating process S40 are sequentially performed. The controller 30 controls the process processing module 20 to perform the heat treatment process between the first coating process S10 and the etching process S30 and after the second coating process S40.

Hereinafter, a substrate processing method according to an embodiment of the present invention will be described using the substrate processing apparatus 1 of FIG.

9 is a flowchart showing a substrate processing method according to an embodiment of the present invention. Referring to FIG. 9, the substrate processing method includes a first coating step (S10), an etching step (S30), a second coating step (S40), and a heat treatment step (S20, S50). The first coating step (S10), the etching step (S30) and the second coating step (S40) are performed sequentially.

10 to 12 are sectional views showing the substrate W on which the first coating step (S10), the etching step (S30) and the second coating step (S40) of FIG. 9 are performed. Referring to Fig. 10, in the first coating step S10, the controller 30 controls the first coating unit 920a and the substrate supporting unit 830 to perform the first coating step S10. In the first coating step S10, the first coating liquid is supplied onto the substrate W on which the pattern 13 is formed in the first liquid processing chamber 260a to form the first coating layer 15. The first coating liquid is applied to the concave portion between the patterns 13 and the upper surface of the pattern 13 to form the first coating layer 15 on the concave portion between the patterns 13 and on the upper surface of the pattern 13.

11, in the etching process S30, the controller 30 controls the etching unit 940 to perform the etching process S30 in the first liquid processing chamber 260a or the second liquid processing chamber 260b. And the substrate support unit 830. [ In the etching step S30, the first coated layer 15 located on the upper surface of the pattern 13 is removed so that the upper surface of the pattern 13 is exposed by supplying a chemical to the substrate W. In the etching process S30, the chemical is supplied from a nozzle provided at a position spaced apart from the supply point of the chemical supplied to the substrate W on the substrate W, as viewed from above. Details of the position of the nozzle and the method of supplying the camber are the same as those of the apparatus. The etching process S30 is performed on the entire upper surface of the substrate W. [ The etching process (S30) is provided in a wet process performed by supplying a chemical, so that etching with a high selectivity ratio is possible as compared with the dry process. 2, when the etching process S30 is performed in the first liquid processing chamber 260a, after the first coating process S10 is completed, the substrate processing method of the present invention is applied to the bake chamber The substrate W is transferred from the first liquid processing chamber 260a to the first liquid processing chamber 260a for the etching process S30 to carry out the heat treatment process S20 in the first liquid processing chamber 260, The transfer is performed. Therefore, if the etching process S30 is performed in the second liquid processing chamber 260b, the substrate transfer is not required between the etching process S30 and the second coating process S40, so that the etching process S30 is performed, The total process time is shortened as compared with the case where the process is performed in step S40. Alternatively, the heat treatment step (S20) may not be performed between the first coating step (S10) and the etching step (S30).

Referring to Fig. 12, in the second coating step (S40), the controller 30 controls the second coating unit 920b and the substrate supporting unit 830 to perform the second coating step (S40). In the second coating step S40, the second coating liquid is supplied onto the substrate W in the second liquid processing chamber 260b to form the second coating layer 17. The second coating liquid is applied such that the second coating layer 17 formed on the upper surface of the pattern 13 and the upper surface of the first coating layer 15 filled in the recesses between the patterns 13 are formed to be flat.

In the heat treatment process (S20, S50), the substrate W is heated to a predetermined temperature and heat treatment is performed on the substrate W. The heat treatment steps S20 and S50 are performed between the first coating step S10 and the etching step S30 and after the second coating step S40. The temperature at which the substrate W is heated in the heat treatment step S20 performed between the first coating step S10 and the etching step S30 and the temperature at which the substrate W is heated in the heat treatment step S50 performed after the second coating step S40 The temperature at which the substrate W is heated may be different. The bake chamber 280 for performing the heat treatment step S20 performed between the first coating step S10 and the etching step S30 is formed in the first liquid processing chamber The bake chamber 280 performing the heat treatment process S50 performed after the second application process S40 may be provided at a height corresponding to that of the second liquid processing chamber 260b. have.

As described above, the apparatus and the method according to the embodiment of the present invention are provided at positions where the nozzles for discharging different process liquids do not interfere with each other, so that when different process liquids are supplied onto the substrate through the respective nozzles, No movement of the nozzle is required. Therefore, since the nozzle moving time is not required, the entire time can be shortened in the production of the substrate, so that the production efficiency for producing the substrate can be increased.

1: substrate processing equipment 10: index module
20: Process processing module 260: Liquid processing chamber
260a: First liquid processing chamber 260b: Second liquid processing chamber
280: Baking chamber 920: Coating unit
940: etching unit

Claims (24)

A substrate support member for supporting the substrate;
A rotation driving member for rotating the substrate support member;
A first supply unit having a first nozzle for supplying a first processing solution onto a substrate supported by the substrate supporting member;
And a second supply unit having a second nozzle for supplying a second treatment liquid onto the substrate,
And the second nozzle supplies the second processing liquid onto the substrate at a position spaced apart from a second supply point where the second processing liquid is supplied onto the substrate when viewed from above. The method according to claim 1,
And the second nozzle supplies the second processing liquid at a position deviated from the upper surface of the substrate when viewed from above. 3. The method of claim 2,
And the second nozzle injects the second process liquid in a horizontal direction. 4. The method according to any one of claims 1 to 3,
Wherein the first supply point and the second supply point, to which the first process liquid is supplied, are the same or adjacent to each other. 5. The method of claim 4,
Wherein the first nozzle supplies the processing liquid to the substrate from the upper side in the vertical direction at the first supply point. 6. The method of claim 5,
Wherein the first treatment liquid is a coating liquid for forming a film on a substrate,
Wherein the second process liquid is a chemical liquid for etching the film formed on the substrate. The method according to claim 6,
The first treatment liquid is a photoresist (PR) liquid or a spin-on hard mask (SOH) liquid,
Wherein the second processing liquid is provided as a thinner. An apparatus for processing a substrate,
An index module;
Process processing module,
The index module comprises:
A load port in which a vessel containing a substrate is placed;
And a transfer frame provided with an index robot for transferring a substrate between the container and the process processing module,
Wherein the process module comprises:
A process chamber;
And a transfer chamber provided with a main robot for transferring a substrate between the process chambers,
Wherein the process chamber includes a first chamber for supplying a first processing solution and a second processing solution to the substrate to process the substrate,
Wherein the first chamber comprises:
A substrate support member for supporting the substrate;
A rotation driving member for rotating the substrate support member;
A first supply unit having a first nozzle for supplying the first processing solution onto a substrate supported by the substrate supporting member;
And a second supply unit having a second nozzle for supplying the second process liquid onto the substrate,
And the second nozzle supplies the second processing liquid onto the substrate at a position spaced apart from a second supply point where the second processing liquid is supplied onto the substrate when viewed from above. 9. The method of claim 8,
And the second nozzle supplies the second processing liquid at a position deviated from the upper surface of the substrate when viewed from above. 10. The method of claim 9,
And the second nozzle injects the second process liquid in a horizontal direction. 10. The method of claim 9,
Wherein the first supply point and the second supply point, to which the first process liquid is supplied, are the same or adjacent to each other. 12. The method of claim 11,
Wherein the first nozzle supplies the processing liquid to the substrate from the upper side in the vertical direction at the first supply point. 13. The method of claim 12,
Wherein the process chamber further comprises a second chamber for supplying a third process liquid to the substrate to process the substrate. 14. The method of claim 13,
The apparatus further comprises a controller,
Wherein the controller is configured to perform the steps of: supplying the third processing liquid onto the substrate; supplying the second processing liquid onto the substrate; and supplying the first processing liquid onto the substrate, To the substrate processing apparatus. The method according to claim 13 or 14,
Wherein the first treatment liquid and the third treatment liquid are a coating liquid for forming a film on a substrate,
Wherein the second process liquid is a chemical liquid for etching the film formed on the substrate. 16. The method of claim 15,
The first treatment liquid and the third treatment liquid are provided as a photoresist (PR) or a spin-on hard mask (SOH) liquid,
Wherein the second processing liquid is provided as a thinner. A method of processing a substrate,
A coating step of supplying a coating liquid onto a substrate having a pattern formed therein in a process chamber to form a coating layer;
And an etch process for removing the coating layer located on the upper surface of the pattern by supplying a chemical to the substrate,
Wherein the applying step and the etching step are performed in the same chamber,
Wherein, in the etching process, the chemical is supplied from a nozzle provided at a position spaced apart from a supply point of the chemical on which the chemical is supplied onto the substrate when viewed from above. 18. The method of claim 17,
Wherein in the etching process, the nozzle feeds the camical at a position deviated from the top surface of the substrate when viewed from above. 19. The method of claim 18,
Wherein in the etching process, the nozzle injects the camber in a horizontal direction. 20. The method according to any one of claims 17 to 19,
Wherein the coating liquid supply point at which the coating liquid is supplied onto the substrate in the coating step and the camical supply point to which the chemical is supplied on the substrate in the etching process are the same or adjacent to each other. 21. The method of claim 20,
Wherein in the coating step, the coating liquid is supplied from a nozzle positioned vertically upward at the coating liquid supply point. 22. The method of claim 21,
The coating liquid is a photoresist (PR) liquid or a spin-on hard mask (SOH) liquid,
Wherein the chemical is provided as a thinner. 22. The method of claim 21,
Wherein the etching process is performed after the application process is performed. 22. The method of claim 21,
Wherein the applying step is performed after the etching step is performed.

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