KR100853000B1 - 실리콘 웨이퍼 보관용수 및 보관방법 - Google Patents
실리콘 웨이퍼 보관용수 및 보관방법 Download PDFInfo
- Publication number
- KR100853000B1 KR100853000B1 KR1020027015269A KR20027015269A KR100853000B1 KR 100853000 B1 KR100853000 B1 KR 100853000B1 KR 1020027015269 A KR1020027015269 A KR 1020027015269A KR 20027015269 A KR20027015269 A KR 20027015269A KR 100853000 B1 KR100853000 B1 KR 100853000B1
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- water
- storage
- silicon wafer
- polishing
- Prior art date
Links
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 193
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 79
- 239000010703 silicon Substances 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000003860 storage Methods 0.000 claims abstract description 142
- 239000007788 liquid Substances 0.000 claims abstract description 62
- 238000005498 polishing Methods 0.000 claims description 46
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000005406 washing Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 229
- 238000011156 evaluation Methods 0.000 description 65
- 230000000052 comparative effect Effects 0.000 description 32
- 230000008569 process Effects 0.000 description 19
- 230000015556 catabolic process Effects 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 18
- 230000003746 surface roughness Effects 0.000 description 18
- 230000006866 deterioration Effects 0.000 description 17
- 230000007547 defect Effects 0.000 description 16
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 15
- 238000011109 contamination Methods 0.000 description 14
- 239000004094 surface-active agent Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000007800 oxidant agent Substances 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 4
- 239000002738 chelating agent Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000002542 deteriorative effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- -1 nitro triacetic acid Chemical compound 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
헤이즈 평가결과 | |||||
보관시간 | 1시간 | 2시간 | 4시간 | 8시간 | 12시간 |
실시예 1 | 41 | 40 | 41 | 41 | 41 |
비교예 1 | 41 | 41 | 41 | 42 | 41 |
GOI 평가결과(실시예 1) | ||||||
보관시간 | 1시간 | 2시간 | 4시간 | 8시간 | 12시간 | |
TZDB | C 모드(%) | 71.0 | 69.0 | 70.0 | 72.0 | 71.0 |
TDDB | α모드(%) | 16.0 | 17.0 | 16.0 | 19.0 | 18.0 |
β모드(%) | 2.0 | 1.0 | 1.0 | 1.0 | 1.0 | |
γ모드(%) | 82.0 | 82.0 | 83.0 | 80.0 | 81.0 |
GOI 평가결과(비교예 1) | ||||||
보관시간 | 1시간 | 2시간 | 4시간 | 8시간 | 12시간 | |
TZDB | C 모드(%) | 71.0 | 70.0 | 69.0 | 67.0 | 68.0 |
TDDB | α모드(%) | 17.0 | 17.0 | 18.0 | 23.0 | 24.0 |
β모드(%) | 2.0 | 1.0 | 1.0 | 3.0 | 6.0 | |
γ모드(%) | 81.0 | 82.0 | 81.0 | 74.0 | 70.0 |
SC1 평가법에 의한 평가결과(LPD 수) | |||||
보관시간 | 1시간 | 2시간 | 4시간 | 8시간 | 12시간 |
실시예 1 | 80 | 102 | 95 | 85 | 89 |
비교예 1 | 95 | 112 | 108 | 135 | 185 |
단위: 개/8인치 웨이퍼 |
SC1 평가법에 의한 평가결과(LPD 수) | ||||||
보관시간 | 0시간 | 1시간 | 2시간 | 4시간 | 8시간 | 12시간 |
실시예 9 | 77 | 78 | 82 | 78 | 82 | 80 |
비교예 9 | 89 | 107 | 124 | 120 | 147 | 202 |
단위: 개/8인치 웨이퍼 |
Claims (23)
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- 삭제
- 실리콘 웨이퍼의 보관방법으로서, 액온이 0∼18℃인 샤워 수를 사용하여 실리콘 웨이퍼를 샤워하고, 다음에 액온이 0∼18℃인 보관용수를 사용하여 실리콘 웨이퍼를 액중보관하는 것을 특징으로 하는 실리콘 웨이퍼의 보관방법
- 삭제
- 실리콘 경면(鏡面) 웨이퍼의 제조방법으로서, 적어도 실리콘 웨이퍼를 연마하여 연마면을 경면화하는 공정후, 이 경면화된 실리콘 웨이퍼를 액온이 0∼18℃로 유지된 샤워 수에 의하여 샤워하는 공정을 행하고, 그 후에 상기 경면화된 실리콘 웨이퍼를 액온이 0∼18℃로 유지된 보관용수에 보관하는 공정, 이 보관된 실리콘 웨이퍼를 세정하는 공정을 포함하는 것을 특징으로 하는 실리콘 경면 웨이퍼의 제조방법
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001076118 | 2001-03-16 | ||
JPJP-P-2001-00076118 | 2001-03-16 | ||
PCT/JP2002/002250 WO2002075798A1 (fr) | 2001-03-16 | 2002-03-11 | Eau et procede de stockage d'une tranche de silicium |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030007616A KR20030007616A (ko) | 2003-01-23 |
KR100853000B1 true KR100853000B1 (ko) | 2008-08-19 |
Family
ID=18933104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020027015269A KR100853000B1 (ko) | 2001-03-16 | 2002-03-11 | 실리콘 웨이퍼 보관용수 및 보관방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8303722B2 (ko) |
EP (1) | EP1298715B1 (ko) |
JP (1) | JP3901094B2 (ko) |
KR (1) | KR100853000B1 (ko) |
TW (1) | TW565887B (ko) |
WO (1) | WO2002075798A1 (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7078343B2 (en) * | 2001-03-06 | 2006-07-18 | Sumitomo Electric Industries, Ltd. | Method of manufacturing compound semiconductor wafer |
KR100853000B1 (ko) | 2001-03-16 | 2008-08-19 | 신에쯔 한도타이 가부시키가이샤 | 실리콘 웨이퍼 보관용수 및 보관방법 |
JP2007067179A (ja) * | 2005-08-31 | 2007-03-15 | Shin Etsu Handotai Co Ltd | 半導体ウエーハの鏡面研磨方法及び鏡面研磨システム |
JP4857738B2 (ja) * | 2005-11-30 | 2012-01-18 | 信越半導体株式会社 | 半導体ウエーハの洗浄方法および製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0883783A (ja) * | 1994-09-12 | 1996-03-26 | Shin Etsu Handotai Co Ltd | 半導体シリコンウェーハの保管方法 |
JPH11243073A (ja) * | 1997-12-26 | 1999-09-07 | Shin Etsu Handotai Co Ltd | シリコンウエーハを液中で保管する方法 |
JP2000091277A (ja) * | 1998-09-07 | 2000-03-31 | Nec Corp | 基板洗浄方法および基板洗浄液 |
JP2000277470A (ja) * | 1999-03-26 | 2000-10-06 | Nec Corp | 研磨後ウェハの保管方法および装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH084063B2 (ja) * | 1986-12-17 | 1996-01-17 | 富士通株式会社 | 半導体基板の保存方法 |
JPS6413718A (en) * | 1987-07-08 | 1989-01-18 | Sumitomo Electric Industries | Method for storing semiconductor substrate |
DE3823765A1 (de) * | 1988-07-13 | 1990-01-18 | Wacker Chemitronic | Verfahren zur konservierung der oberflaeche von siliciumscheiben |
DE69218565T2 (de) | 1991-12-11 | 1997-08-07 | Nitto Boseki Co Ltd | Schmelzfähiges adhäsives Garn und Verfahren zu dessen Herstellung |
JP2762230B2 (ja) * | 1994-03-25 | 1998-06-04 | 信越半導体株式会社 | シリコンウエーハの保管方法 |
JPH0969557A (ja) * | 1995-08-30 | 1997-03-11 | Shin Etsu Handotai Co Ltd | ウエーハの保管/輸送方法 |
JP3343013B2 (ja) * | 1995-12-28 | 2002-11-11 | 大日本スクリーン製造株式会社 | 基板洗浄方法及びその装置 |
US6045624A (en) * | 1996-09-27 | 2000-04-04 | Tokyo Electron Limited | Apparatus for and method of cleaning objects to be processed |
US5837662A (en) * | 1997-12-12 | 1998-11-17 | Memc Electronic Materials, Inc. | Post-lapping cleaning process for silicon wafers |
JP3255103B2 (ja) | 1997-12-25 | 2002-02-12 | 信越半導体株式会社 | シリコンウエーハの保管用水及び保管する方法 |
US6884721B2 (en) | 1997-12-25 | 2005-04-26 | Shin-Etsu Handotai Co., Ltd. | Silicon wafer storage water and silicon wafer storage method |
US6063205A (en) * | 1998-01-28 | 2000-05-16 | Cooper; Steven P. | Use of H2 O2 solution as a method of post lap cleaning |
JP2000012648A (ja) * | 1998-06-17 | 2000-01-14 | Ebara Corp | 素子製造工程における基材表面保護方法及び装置 |
JP2000049127A (ja) | 1998-07-29 | 2000-02-18 | Shin Etsu Handotai Co Ltd | 半導体シリコン単結晶ウェーハのピット保管方法 |
JP2000049128A (ja) | 1998-07-29 | 2000-02-18 | Shin Etsu Handotai Co Ltd | 半導体シリコン単結晶ウェーハのピット保管方法 |
JP3316484B2 (ja) * | 1999-05-27 | 2002-08-19 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP4554011B2 (ja) * | 1999-08-10 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
KR100853000B1 (ko) | 2001-03-16 | 2008-08-19 | 신에쯔 한도타이 가부시키가이샤 | 실리콘 웨이퍼 보관용수 및 보관방법 |
-
2002
- 2002-03-11 KR KR1020027015269A patent/KR100853000B1/ko active IP Right Grant
- 2002-03-11 US US10/276,483 patent/US8303722B2/en not_active Expired - Fee Related
- 2002-03-11 WO PCT/JP2002/002250 patent/WO2002075798A1/ja active Application Filing
- 2002-03-11 EP EP02703960.1A patent/EP1298715B1/en not_active Expired - Lifetime
- 2002-03-11 JP JP2002574116A patent/JP3901094B2/ja not_active Expired - Fee Related
- 2002-03-14 TW TW091104853A patent/TW565887B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0883783A (ja) * | 1994-09-12 | 1996-03-26 | Shin Etsu Handotai Co Ltd | 半導体シリコンウェーハの保管方法 |
JPH11243073A (ja) * | 1997-12-26 | 1999-09-07 | Shin Etsu Handotai Co Ltd | シリコンウエーハを液中で保管する方法 |
JP2000091277A (ja) * | 1998-09-07 | 2000-03-31 | Nec Corp | 基板洗浄方法および基板洗浄液 |
JP2000277470A (ja) * | 1999-03-26 | 2000-10-06 | Nec Corp | 研磨後ウェハの保管方法および装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2002075798A1 (fr) | 2002-09-26 |
KR20030007616A (ko) | 2003-01-23 |
US20030139067A1 (en) | 2003-07-24 |
TW565887B (en) | 2003-12-11 |
EP1298715B1 (en) | 2013-08-07 |
JP3901094B2 (ja) | 2007-04-04 |
EP1298715A1 (en) | 2003-04-02 |
US8303722B2 (en) | 2012-11-06 |
EP1298715A4 (en) | 2008-03-19 |
JPWO2002075798A1 (ja) | 2004-07-08 |
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