KR100708855B1 - Organic light emitting display and method of manufacturing the same - Google Patents

Abstract

The present invention provides an organic light emitting display device and a method of manufacturing the same that can prevent dark spot defects caused by particles.

The organic light emitting diode display according to the present invention includes a substrate, a planarization film formed on the substrate, a light emitting device including a first electrode, an organic light emitting layer, and a second electrode sequentially formed on the planarization film, and an opening in which the organic light emitting layer is positioned. And a pixel defining layer formed on the first electrode and the planarization layer, wherein the planarization layer has a groove corresponding to the edge portion of the first electrode, and the edge portion of the first electrode extends to the bottom of the groove. .

Organic light emitting display, TFT, ITO, Ag, planarization film, pixel definition film

Description

Organic light-emitting display device and manufacturing method therefor {ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME}

1 is a perspective view illustrating an organic light emitting display device according to an exemplary embodiment of the present invention.

2 is a plan view illustrating pixels of an organic light emitting diode display according to an exemplary embodiment of the present invention.

3 is a cross-sectional view illustrating a pixel of an organic light emitting diode display according to an exemplary embodiment of the present invention, and is taken along line III-III and line III′-III ′ of FIG. 2.

4A through 4D are sequential process cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention.

5 is a diagram illustrating a problem that occurs after forming a first electrode of a conventional organic light emitting diode display.

The present invention relates to an organic light emitting display device, and more particularly, to an organic light emitting display device and a method of manufacturing the same that can prevent dark spot defects.

In the organic light emitting diode display, electrons and holes injected into the organic material through an anode and a cathode recombine to form an exciton, and light of a specific wavelength is generated by energy from the exciton formed. It is a self-luminous display device using the phenomenon which occurs. Accordingly, the organic light emitting diode display is attracting attention as a next-generation display device because it does not require a separate light source such as a backlight, and thus has low power consumption and easy securing of a wide viewing angle and a fast response speed compared to the liquid crystal display.

The light emitting device of the organic light emitting diode display includes a first electrode of an anode, which is a hole injection electrode, a light emitting layer, and a second electrode of a cathode, which is an electron injection electrode, and the light emitting layer is red (R), green (G; Green). In addition, each of the organic materials emitting blue (B) is made of full color. In addition, the light emitting layer has a multilayer structure including an electron transport layer (ETL) and a hole transport layer (HTL) in the emitting layer (EML) to improve the light emission efficiency by improving the balance between electrons and holes. In some cases, it may further include a separate electron injection layer (EIL) and a hole injection layer (HIL).

The OLED display is classified into a passive matrix type and an active matrix type according to a driving method.

Here, the passive driving type organic light emitting display device is simple in manufacturing process and low in manufacturing cost, but is large in power consumption and unsuitable for large area. On the other hand, since the active driving type organic light emitting display device has a thin film transistor (TFT) as a driving element, the process is more complicated and the manufacturing cost is higher than that of the passive driving type organic light emitting display device. Since R, G, and B independent driving methods enable low power consumption, high definition, fast response speed, wide viewing angle, and thinning, the active driving type organic light emitting display device is mainly applied.

The organic light emitting diode display is classified into a bottom emitting type and a top emitting type according to the type of light emission. In the case of an active driving organic light emitting display, when driving to the bottom emitting type, the aperture ratio is limited by the TFT. Driving is advantageous in terms of aperture ratio.

Meanwhile, in the conventional top emission type organic light emitting diode display, a metal having high reflectance, for example, silver (Ag), is applied to the first electrode of the light emitting device in order to increase luminous efficiency. Indium tin oxide (ITO) is applied to the lower and upper portions of Ag, respectively, in consideration of the adhesiveness between them and the work function relationship between the light emitting layer positioned above.

However, when ITO / Ag / ITO is simultaneously etched using a photoresist pattern as a mask to form the first electrode of ITO / Ag / ITO, the planarization is performed as shown in FIG. Side portions of the first electrode 20 formed on the film 10 have an overhang or inverse taper shape, so that the upper ITO and Ag are present in the form of particles. The particles move to the upper surface of the first electrode, which will come into contact with the light emitting layer when the photoresist pattern is removed, and redeposit, and the redeposited particles may have a short circuit with the second electrode when the OLED is driven. short) to cause a dark point defect, which in turn causes display quality deterioration.

The present invention is to solve the problems of the prior art as described above, an object of the present invention is to provide an organic light emitting display device that can prevent the dark spot defects caused by particles.

In addition, another object of the present invention is to provide a method of manufacturing the organic light emitting display device.

In order to achieve the above object, the present invention provides a substrate, a planarization film formed on the substrate, a light emitting device including a first electrode, an organic light emitting layer, and a second electrode sequentially formed on the planarization film, and the organic light emitting layer is A pixel defining layer having an opening and formed on the first electrode and the planarization film, wherein the planarization film has a groove corresponding to an edge portion of the first electrode, and an edge portion of the first electrode extends to the bottom of the groove. An organic light emitting display device is provided.

In order to achieve the above object, the present invention is to form a planarization film on the entire surface of the substrate with a thin film transistor, to form a via hole for exposing a portion of the thin film transistor by patterning the planarization film, and to form a groove on the planarization film Forming a first electrode electrically connected to a portion of the thin film transistor through the via hole and having an edge portion extending to the bottom of the groove, and forming a pixel defining layer having an opening exposing the first electrode while filling the groove on the planarization film. And sequentially forming an organic emission layer and a second electrode in contact with the first electrode into the opening.

Here, the first electrode may include silver (Ag) or silver (Ag) -alloy, preferably ITO / Ag / ITO or ITO / Ag alloy / ITO.

In addition, the second electrode may include a transparent conductive material such as ITO, IZO, or MgAg.

In addition, the groove of the planarization layer may be formed to a depth lower than that of the via hole.

In addition, the patterning of the planarization film may be performed by an exposure process using a halftone mask.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

1 is a perspective view illustrating an organic light emitting display device according to an exemplary embodiment of the present invention, FIG. 2 is a plan view illustrating a pixel P of FIG. 1, and FIG. 3 is a line III-III and III′-III ′ of FIG. 2. Sectional view along the line.

Referring to FIG. 1, the organic light emitting diode display 100 includes a display area A1 in which actual light emission and display are performed on the substrate 110, and a non-display area A2 around the display area A1. The substrate 110 has a configuration in which the substrate 110 is bonded to each other with the encapsulation substrate 120 by the sealing member 130 so as to protect (A1).

The substrate 110 may be made of an insulating material such as glass or plastic or a metal material such as stainless steel (SUS), and the sealing member 130 may be disposed to surround the display area A1.

The pixels P are arranged in a matrix in the display area A1 of the substrate 10, and the pads 140 are arranged in the non-display area A2.

First, referring to FIG. 2, the configuration of the pixel P will be described in more detail. In the pixel P, the scan line SL is disposed along one direction of the substrate 110 and crosses the scan line SL. The data line DL and the power line VDD are disposed to be spaced apart from each other, and the first and second TFTs T1, T1, in a region defined by the scan line SL, the data line DL, and the power line PL. A driving element made of T2), a storage element made of capacitor Cst, and a light emitting element L made of an organic light-emitting diode (OLED) are formed respectively.

The first TFT T1 is connected to the scan line SL and the data line DL, respectively, and receives a data voltage input from the data line DL according to a switching voltage input from the scan line SL. The capacitor Cst is connected to the first TFT T1 and the power line VDD, respectively, and corresponds to a difference between the voltage transmitted from the first TFT T1 and the voltage supplied to the power line PL. Save the voltage (Vgs). The second TFT T2 is connected to the power supply line VDD and the capacitor Cst, respectively, and is output current I proportional to the square of the difference between the voltage Vgs and the threshold voltage Vth stored in the capacitor Cst. _d ) is supplied to the light emitting element L, and the light emitting element L emits light by this output current I _d . In this case, the output current Id may be represented by Equation 1 below, and β in Equation 1 represents a proportionality constant.

I _d = (β / 2) × (V _gs -V _th ) ²

In this embodiment, the case where the drive element is composed of two TFTs (T1, T2) and the storage element is composed of one capacitor (Cst) is shown. However, the configuration of such a drive element and the storage element is not limited to this.

Next, the configuration of the TFT T2 and the light emitting device L of the pixel P will be described in more detail with reference to FIG. 3.

In the TFT T2, the semiconductor layer 210 and the gate electrode 230 are sequentially formed on the substrate 110 with the gate insulating layer 220 interposed therebetween, and the gate electrode 230 is disposed with the interlayer insulating layer 240 interposed therebetween. The source electrode 251 and the drain electrode 252 are formed above.

The semiconductor layer 210 includes source and drain regions 211 and 212 doped with impurities and a channel region 213 therebetween. The gate electrode 230 is formed corresponding to the channel region 211 and may be formed of, for example, metal such as MoW, Al, Cr, or Al / Cr. The source electrode 251 and the drain electrode 252 are source regions of the semiconductor layer 210 through respective contact holes 221, 222, 241 and 242 provided in the gate insulating film 220 and the interlayer insulating film 24. It is electrically connected to the 211 and the drain region 212, for example, may be made of a metal such as Ti / Al, Ti / Al / Ti.

In the present exemplary embodiment, the TFT (T2) has a structure in which the gate electrode 230 and the source and drain electrodes 251 and 252 are disposed on the semiconductor layer 210, but the semiconductor layer 210 and the gate electrode ( The arrangement structure of the 230 and source and drain electrodes 251 and 252 is not limited thereto.

Meanwhile, the light emitting device L is formed on the TFT T2 with the passivation layer 260 and the planarization layer 270 interposed therebetween, and the first electrode 310 of the anode, the organic emission layer 330, and the second electrode of the cathode are formed. 340 has a configuration in which stacked sequentially.

The passivation layer 260 protects the TFT T2 and insulates the power line VDD and the data line DL from the first electrode 310 at the edge of the first electrode 310, and the planarization layer 270. ) Is formed on the protective film 260 so that the substrate 110 generated by the TFT (T2) relaxes the surface step. The passivation layer 260 and the planarization layer 270 have via holes 261 and 273 on the drain electrode 252, respectively, and the planarization layer 270 corresponds to the edge portion of the first electrode 310. 272). The first electrode 310 is electrically connected to the drain electrode 252 through the via holes 261 and 273, and the edge portion thereof is extended to the bottom of the grooves 271 and 272 so that the first electrode 310 is positioned lower than the center portion. The pixel defining layer 320 is electrically separated from the first electrode (not shown) of the adjacent pixel. The pixel defining layer 320 includes an opening 321 that exposes a central portion of the first electrode 310 while filling the grooves 271 and 272 of the planarization film 270, and through the opening 321, the pixel defining layer 320 is formed. The organic emission layer 330 contacts the central portion of the first electrode 310, and the second electrode 340 is formed on the pixel defining layer 320 and the organic emission layer 330.

The protective layer 260 may be formed of an inorganic insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (Si ₃ N ₄ ), and the planarization layer 270 may be formed of acryl and benzocyclobutene (BCB). It may be made of the same organic insulating material. In addition, the planarization layer 270 may have a thickness of 0.8 to 2.2 μm, and in this case, the grooves 271 and 272 of the planarization layer 270 may have a width of about 0.2 μm or more, preferably about 0.2 to 0.4 μm. Can be.

In the present exemplary embodiment, a passivation layer 260 is formed under the planarization layer 270 to insulate the edges of the first electrode 310 from the grooves 271 and 272 between the power line VDD and the data line DL. Although not shown, the depth of the groove of the planarization layer 270 is adjusted to be lower than the depth of the via hole 273 without forming the protective layer 260 so that the edge of the first electrode 310 and the power line VDD are formed. And the data line DL may be insulated from each other.

The first electrode 310 may include Ag or an Ag alloy. Preferably, the first electrode 310 may include Ag or Ag alloy to improve adhesion to the planarization layer 270 and a work function relationship with the organic light emitting layer 330. It may be made of ITO / Ag / ITO or ITO / Ag alloy / ITO formed ITO on the lower and upper, respectively.

The second electrode 340 may include a transparent conductive material such as ITO, indium zinc oxide (IZO), and MgAg.

The organic light emitting layer 330 is copper phthalocyanine (CuPc), N, N'-di (naphthalen-1-yl) -N, N'-dipetyl-benzidine (N, N'-Di (naphthalene-1-). It may be made of low molecular organic materials such as yl) -N, N'-diphenyl-benzidine (NPB), tris-8-hydroxyquinoline aluminum (Alq3), or polymer organic materials.

For example, when the organic light emitting layer 330 is made of a low molecular organic material, a hole injection layer (HIL), a hole transport layer (HTL), an emitting layer (EML), and an electron transport layer (Electron Transport Layer); It may be made of a multi-layer structure including ETL).

In addition, when the organic light emitting layer 330 is formed of a polymer organic material, it may be formed of a hole transport layer (HTL) and an emitting layer (EML), wherein the HTL is made of PEDOT material and the EML is poly-phenylene. Poly-Phenylenevinylene (PPV) -based or polyfluorene (Polyfluorene) may be made of a material.

The method of manufacturing the organic light emitting display device described above will be described with reference to FIGS. 4A to 4D.

Referring to FIG. 4A, a semiconductor layer 210 is formed on a substrate 110. For example, the semiconductor layer 210 may be formed by depositing an amorphous silicon film on the substrate 110 and irradiating it with an excimer laser to crystallize to form a polysilicon film and then patterning it. In this case, a buffer insulating film (not shown) is formed on the substrate 110 before the deposition of the amorphous silicon film to prevent the alkali-based impurities present on the surface of the substrate 110 from being locally eluted and diffused into the amorphous silicon film due to the heat during laser irradiation. ) Can be formed more.

Next, a gate insulating film 220 is formed on the entire surface of the substrate 110 to cover the semiconductor layer 210, and a gate electrode material layer is deposited on the gate insulating film 220 and patterned to form the gate insulating film 220. A gate electrode 230 is formed across the central portion. Here, the semiconductor layer 210 under the gate electrode 230 substantially serves as the channel region 213, and a metal such as MoW, Al, Cr, and Al / Cr may be used as the gate electrode material. Subsequently, the semiconductor layer 210 is doped with n-type or p-type impurities to form source and drain regions 211 and 212 in the semiconductor layer 210 on both sides of the gate electrode 230. Thereafter, an interlayer insulating film 240 is formed on the gate insulating film 220 to cover the gate electrode 230, and the gate insulating film 220 and the interlayer insulating film 240 on the source and drain regions 211 and 212 are formed. By patterning, contact holes 221 and 222 and 241 and 242 are formed in the gate insulating film 220 and the interlayer insulating film 240 to expose the source and drain regions 211 and 212, respectively.

Next, a source and drain electrode material layer is deposited on the contact holes 221 and 222 and 241 and 242 and the interlayer insulating layer 240, and patterned, so as to be electrically connected to the source and drain regions 211 and 212. And the drain electrodes 251 and 252 are formed to form a TFT (T2). For example, a metal including Al, such as Ti / Al and Ti / Al / Ti, may be used as the source and drain electrode materials.

Referring to FIG. 4B, a protective film 260 made of an inorganic insulating material such as silicon oxide (SiO ₂ ) and silicon nitride (Si ₃ N ₄ ) is formed on the interlayer insulating layer 240, and acrylic, A planarization film 270 made of an organic insulating material such as benzocyclobutene (BCB) is formed. At this time, the planarization film 270 may be formed to a thickness of 0.8 to 2.2㎛.

Next, the planarization film 270 is patterned by an exposure and development process to form grooves 271 and 272 so as to correspond to edge portions of the first electrode 310 of the light emitting device L to be formed later. After the via hole 273 is formed over the electrode 251 or the drain electrode 252, for example, the drain electrode 252, the protective layer 260 exposed through the via hole 273 is etched to form a via hole in the protective layer 260. 261 is formed to expose the drain electrode 252. At this time, the grooves 271 and 272 of the planarization film 270 are formed to have a width of about 0.2 µm or more and about 0.2 to 0.4 µm.

On the other hand, the via hole 273 and a groove having a lower depth than the via hole 273 may be simultaneously formed in the planarization film 270 by the exposure process using the halftone mask without forming the protective film 260.

Referring to FIG. 4C, a first electrode material layer of a material including Ag or Ag alloy, preferably ITO / Ag / ITO or ITO / Ag alloy / ITO, is formed on the entire surface of the substrate 110. Next, a photoresist pattern (not shown) is formed on the first electrode material layer by a photolithography process, and the first electrode material layer is patterned by an etching process, and the drain electrode 252 is formed through the via holes 261 and 273. The edge portion extends to the bottom of the grooves 271 and 272 while being electrically connected to the to form a first electrode 310 positioned lower than the central portion. Thereafter, the photoresist pattern is removed by a known method.

At this time, even if ITO and Ag are present in the form of particles because side portions of the first electrode 310 have an overhang or inverse taper shape due to the difference in etching speeds between different materials of the first electrode material layer, As the edge portion of the first electrode 310 is positioned lower than the central portion, redeposition of particles to the upper surface of the first electrode 310, which comes into contact with the organic light emitting layer 330 after removal of the photoresist pattern, is performed. It does not occur.

Referring to FIG. 4D, the pixel defining layer 320 is formed on the entire surface of the substrate 110 to fill the grooves 271 and 272 of the planarization layer 270. At this time, the edge portion of the first electrode 310 is covered by the pixel defining layer 320 to completely block the movement of particles remaining in the portion. Next, the pixel defining layer 320 is patterned by an exposure and development process to form an opening 321 exposing the first electrode 310.

Next, an organic emission layer 330 is formed in the opening 321 to contact the first electrode 310, and a second electrode 340 is formed on the pixel defining layer 320 and the organic emission layer 330 to emit light. (L) is formed (see FIG. 3). In this case, the second electrode 340 may include a transparent conductive material such as ITO, IZO, or MgAg.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Naturally, it belongs to

As described above, the method of manufacturing the organic light emitting diode display according to the present invention suppresses the movement of particles generated when the first electrode is formed in the light emitting device, and thus, the first electrode and the second electrode due to the particles when the organic light emitting diode display is driven. The short circuit between them can be prevented, so that a dark spot can be prevented.

As a result, the organic light emitting diode display according to the present invention may have an improved display quality.

Claims (13)

Board; A planarization layer formed on the substrate; A light emitting device including a first electrode, an organic light emitting layer, and a second electrode sequentially formed on the planarization film; And A pixel defining layer having an opening in which the organic light emitting layer is positioned, and formed on the first electrode and the planarization layer; The flattening film has a groove corresponding to an edge portion of the first electrode, An edge of the first electrode extends to the bottom of the groove. According to claim 1, The organic light emitting diode display of which the first electrode includes silver (Ag) or silver (Ag) -alloy. The method of claim 2, The organic light emitting diode display of which the first electrode includes ITO / Ag / ITO or ITO / Ag alloy / ITO. According to claim 1, An OLED display in which the pixel defining layer is embedded in the groove. According to claim 1, The organic light emitting diode display of which the second electrode includes a transparent conductive material such as ITO, IZO, or MgAg. According to claim 1, And a thin film transistor formed between the substrate and the planarization layer. Forming a planarization film on the entire surface of the substrate including the thin film transistor; Patterning the planarization layer to form a via hole exposing a portion of the thin film transistor and simultaneously forming a groove; And Forming a first electrode on the planarization layer, the first electrode having an edge portion extending to the bottom of the groove while being electrically connected to a portion of the thin film transistor through the via hole; Method of manufacturing an organic light emitting display device comprising a. The method of claim 7, wherein The method of claim 1, wherein the first electrode comprises silver (Ag) or silver (Ag) -alloy. The method of claim 8, The method of claim 1, wherein the first electrode comprises ITO / Ag / ITO or ITO / Ag alloy / ITO. The method of claim 7, wherein The groove of the planarization layer is formed to a depth lower than the via hole. The method of claim 7, wherein The patterning of the planarization layer is performed by an exposure process using a halftone mask. The method of claim 7, wherein Forming a pixel defining layer having an opening exposing the first electrode while filling the groove on the planarization layer; And And sequentially forming an organic light emitting layer and a second electrode in contact with the first electrode into the opening. The method of claim 12, The second electrode includes a transparent conductive material such as ITO, IZO, MgAg.

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