KR100658758B1 - OLED display and manufacturing method thereof - Google Patents

Abstract

An organic light emitting display and a method of manufacturing the same are provided to prevent a manufacturing cost from increasing by not performing an additional mask process for forming a support layer. In an organic light emitting display, a pixel including a light emission portion and a non-light emission portion is formed on a substrate(110). A light emission element(L) including a first electrode(310), an organic light emitting layer(330), and a second electrode(340) is formed on the light emission portion. A pixel defining layer(320) includes an opening unit(321) formed on an upper front face of the substrate(110) and exposing a portion of the non-light emission portion, separating the first electrode(310) from a first electrode of the neighboring pixel. A support layer(350) is formed to be buried on the opening unit(321) of the pixel defining layer(320), upward the pixel defining layer(320).

Description

Organic light-emitting display device and manufacturing method therefor {ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME}

1 is a cross-sectional view illustrating an organic light emitting display device according to an exemplary embodiment of the present invention.

2 is a plan view illustrating pixels of an organic light emitting diode display according to an exemplary embodiment of the present invention.

3 is a partial cross-sectional view illustrating a pixel of an organic light emitting diode display according to an exemplary embodiment of the present invention, and is taken along line III-III of FIG. 2.

4 is a partial cross-sectional view illustrating a pixel of an organic light emitting diode display according to another exemplary embodiment of the present invention.

5A through 5C are cross-sectional views sequentially illustrating a method of manufacturing an OLED display according to an exemplary embodiment of the present invention.

The present invention relates to an organic light emitting diode display, and more particularly, to an organic light emitting diode display and a method of manufacturing the same which can prevent the destruction of pixels during the encapsulation process.

In the organic light emitting diode display, electrons and holes injected into the organic material through an anode and a cathode recombine to form an exciton, and light of a specific wavelength is generated by energy from the exciton formed. It is a self-luminous display device using the phenomenon which occurs. Accordingly, the organic light emitting diode display is attracting attention as a next-generation display device because it does not require a separate light source such as a backlight, and thus has low power consumption and easy securing of a wide viewing angle and a fast response speed compared to the liquid crystal display.

The light emitting device of the organic light emitting diode display includes a first electrode of an anode, which is a hole injection electrode, a light emitting layer, and a second electrode of a cathode, which is an electron injection electrode, and the light emitting layer is red (R), green (G; Green). In addition, each of the organic materials emitting blue (B) is made of full color. In addition, the light emitting layer has a multilayer structure including an electron transport layer (ETL) and a hole transport layer (HTL) in the emitting layer (EML) to improve the light emission efficiency by improving the balance between electrons and holes. In some cases, it may further include a separate electron injection layer (EIL) and a hole injection layer (HIL).

The OLED display is classified into a passive matrix type and an active matrix type according to a driving method.

Here, the passive driving type organic light emitting display device is simple in manufacturing process and low in manufacturing cost, but is large in power consumption and unsuitable for large area. On the other hand, since the active driving type organic light emitting display device has a thin film transistor (TFT) as a driving element, the process is more complicated and the manufacturing cost is higher than that of the passive driving type organic light emitting display device. Since R, G, and B independent driving methods enable low power consumption, high definition, fast response speed, wide viewing angle, and thinning, the active driving type organic light emitting display device is mainly applied.

Meanwhile, in the organic light emitting diode display, after the pixel including the light emitting element is formed on the substrate, an encapsulation process of bonding the substrate and the encapsulation substrate by a sealing member is performed to protect the pixel from external moisture. At this time, glass is mainly used as a material of the sealing substrate.

However, in the organic light emitting diode display, when the substrate and the encapsulation substrate are bonded to each other, there is a problem that the pixels are destroyed due to the pressure applied to the substrate.

The present invention is to solve the problems of the prior art as described above, an object of the present invention is to provide an organic light emitting display device that can prevent the destruction of the pixel during the sealing process.

In addition, another object of the present invention is to provide a method of manufacturing the organic light emitting display device.

In order to achieve the above object, the present invention provides a substrate having a pixel including a light emitting portion and a non-light emitting portion, a light emitting element formed on the light emitting portion and including a first electrode, an organic light emitting layer, and a second electrode, and a first electrode. A pixel defining layer which is separated from the first electrode of the adjacent pixel and has an opening which is formed on the entire surface of the substrate and partially exposes the non-light emitting portion, and a support layer which is formed by being partially embedded in the opening of the pixel defining layer while protruding a portion over the pixel defining layer. An organic light emitting display device is provided.

In addition, the organic light emitting diode display of the present invention may further include a planarization layer formed under the pixel definition layer, wherein the planarization layer may include an opening corresponding to the opening of the pixel definition layer, and the support layer may be embedded in the opening of the planarization layer.

In order to achieve the above object, the present invention provides a substrate in which a light emitting portion and a non-light emitting portion are defined, a first electrode is formed on the light emitting portion of the substrate, a pixel defining layer is formed on the entire surface of the substrate, and Forming a first opening exposing the first electrode and a second opening partially exposing the non-light emitting portion, forming an organic emission layer over the first electrode exposed by the first opening, and filling the second opening over the pixel defining layer Forming a support layer on which a portion protrudes, and forming a second electrode on the front surface of the substrate.

In addition, the method of manufacturing the organic light emitting display device may further include forming a planarization film on the entire surface of the substrate before forming the first electrode and forming an opening penetrating the second opening of the pixel defining layer in the planarization film. can do.

Here, the support layer may be made of an inorganic insulating material or an organic insulating material, and the inorganic insulating material may be made of silicon oxide or silicon nitride.

In addition, the protruding thickness of the support layer may be about 0.3 to 10㎛.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

1 is a cross-sectional view illustrating an organic light emitting display device according to an exemplary embodiment of the present invention, FIG. 2 is a plan view illustrating a pixel P of FIG. 1, and FIG. 3 is a cross-sectional view taken along line III-III of FIG. 2.

Referring to FIG. 1, the organic light emitting diode display 100 includes a plurality of pixels P formed on the substrate 110, and the substrates may be formed by the sealing member 130 to protect the pixels P from external moisture. 100 and the encapsulation substrate 120 are bonded to each other, and a rod-shaped support layer 350 is formed between the pixel P and the encapsulation substrate 120.

Here, the substrate 110 may be made of an insulating material such as glass or plastic or a metal material such as stainless steel (SUS).

The pixel P includes a light emitting portion A1 that actually emits light and a non-light emitting portion A2 around the light emitting portion A1. As shown in FIG. 2, a light emitting device L including an organic light-emitting diode (OLED) is formed in the light emitting unit A1, and a scan line SL and the scan line SL are formed in the non-light emitting unit A2. ) And a data line DL and a power line VDD disposed to be spaced apart from each other, and are respectively connected to the scan line SL and the data line DL. Each of the driving elements including the second TFT T2 connected to the power supply line VDD and the storage elements including the capacitor Cst connected to the first and second TFT T1 and the power supply line VDD, respectively Is formed. In addition, the support layer 350 is formed on the data line DL of the non-light emitting portion A2.

In the present exemplary embodiment, one rod-shaped support layer 350 is formed on the data line DL of the non-light emitting portion A1, but the position, number, and number of the support layers 350 formed on the non-light emitting portion A1 are not shown. The shape and the like are not limited to this.

For example, one support layer 350 may be formed on the data line DL and the power line VDD at each corner of the pixel P, and thus four of the support layers 350 may be disposed in the pixel P.

In addition, in the present embodiment, although the driving element of the pixel P is composed of two TFTs T1 and T2 and the storage element is composed of one capacitor Cst, the configuration of such a driving element and the storage element is shown. Is not limited to this.

Referring to FIG. 3, in the TFT P2 of the pixel P, the semiconductor layer 210 and the gate electrode 230 are sequentially formed on the substrate 110 with the gate insulating layer 220 interposed therebetween. The source electrode 251 and the drain electrode 252 are formed on the gate electrode 230 with the 240 interposed therebetween.

The semiconductor layer 210 includes source and drain regions 211 and 212 doped with impurities and a channel region 213 therebetween, and the gate electrode 230 is formed to correspond to the channel region 211. The source region of the semiconductor layer 210 is formed through the contact holes 221, 222, 241, and 242 provided in the gate insulating layer 220 and the interlayer insulating layer 24. And is electrically connected to the drain region 211.

In the present exemplary embodiment, the TFT (T2) has a structure in which the gate electrode 230 and the source and drain electrodes 251 and 252 are disposed on the semiconductor layer 210, but the semiconductor layer 210 and the gate electrode ( 230, the arrangement structure of the source and drain electrodes 251 and 252 is not limited thereto.

The light emitting device L is formed on the TFT T2 with the planarization film 260 interposed therebetween, and has a structure in which the first electrode 310, the organic light emitting layer 330, and the second electrode 340 are sequentially stacked. The first electrode 310 is separated from the first electrode (not shown) of the adjacent pixel by the pixel defining layer 320. In addition, the first electrode 310 is electrically connected to the drain electrode 252 through the via hole 261 provided in the planarization layer 260, and opens the first opening 321 provided in the pixel defining layer 320. In contact with the organic light emitting layer 330 through.

The first electrode 310 may be made of a material containing a high reflectance metal, for example, ITO / Ag / ITO, ITO / Ag alloy / ITO, or AlNd / ITO, and the second electrode may include a transparent material such as MgAg. have.

On the other hand, the first electrode 310 may be made of a single layer of ITO, IZO or a composite layer thereof, and the second electrode 340 may be made of MgAg or Al.

The organic light emitting layer 330 is copper phthalocyanine (CuPc), N, N'-di (naphthalen-1-yl) -N, N'-dipetyl-benzidine (N, N'-Di (naphthalene-1-). It may be made of low molecular organic materials such as yl) -N, N'-diphenyl-benzidine (NPB), tris-8-hydroxyquinoline aluminum (Alq3), or polymer organic materials.

For example, when the organic emission layer 330 is formed of a low molecular organic material, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), and an electron transport layer (Electron Transport Layer); It may be made of a multi-layer structure including ETL).

In addition, when the organic light emitting layer 330 is formed of a polymer organic material, it may be formed of a hole transport layer (HTL) and an emitting layer (EML), wherein the HTL is made of PEDOT material and the EML is poly-phenylene. Poly-Phenylenevinylene (PPV) -based or polyfluorene (Polyfluorene) may be made of a material.

The support layer 350 may be formed to protrude above the pixel defining layer 320 while contacting the planarization layer 260 on the data line DL through the second opening 322 provided in the pixel defining layer 320. .

On the other hand, as shown in FIG. 4, the support layer 350 includes a second opening 322 provided in the pixel defining layer 320 and another opening provided in the planarization layer 260 so as to penetrate the second opening 322. It may be formed to protrude over the pixel defining layer 320 while directly contacting the data line DL through 262.

In addition, the support layer 350 is made of an inorganic insulating material such as silicon oxide (SiO ₂ ), silicon nitride (SiN _x ), and the protruding thickness of the supporting layer 350 is preferably about 0.3 to 10 μm, and the inorganic insulating material Silver can also be replaced by organic insulating materials.

The method of manufacturing the organic light emitting display device described above will be described with reference to FIGS. 5A to 5C.

Referring to FIG. 5A, the TFT T2 including the gate electrode 230, the source electrode 251, and the drain electrode 252 as described above may be formed on the non-light emitting portion A2 of FIG. 110. The data line DL and the like are formed, and the planarization film 260 is formed on the entire surface of the substrate 110 to cover them. Next, the planarization film 260 is patterned to form a via hole 261 exposing the drain electrode 252, and the drain through the via hole 261 over the planarization film 260 of the light emitting part A1 (see FIG. 2). The first electrode 310 is electrically connected to the electrode 252.

Referring to FIG. 5B, the pixel defining layer 320 is formed on the entire surface of the substrate 110 to cover the first electrode 310, and is patterned to expose the first electrode 310. A portion of the non-light emitting portion A2, for example, a second opening 322 exposing the planarization layer 260 on the data line DL is formed.

Meanwhile, as shown in FIG. 4, when the support layer 350 directly contacts the data line, the second opening 322 is formed when the via hole 261 of the planarization layer 260 is formed before the second opening 322 is formed. And a separate opening 262 penetrating therebetween.

Referring to FIG. 5C, the organic emission layer 330 is formed on the first electrode 310 exposed by the first opening 321. Thereafter, an inorganic insulating material such as silicon oxide or silicon nitride or an organic insulating material is coated on the front surface of the substrate 110 to fill the second opening 321 by a spin on glass (SOG) process, and patterning the second opening 321. As a result, the support layer 350 may be formed to protrude from the pixel defining layer 350. At this time, the inorganic insulating material or the organic insulating material is appropriately adjusted and applied so that the protruding thickness of the support layer 350 is about 0.3 to 10 μm.

Thereafter, as shown in FIG. 3, the second electrode 340 is formed on the entire surface of the substrate 110 to form the light emitting device L. The substrate 110 is encapsulated by the sealing member 130 as shown in FIG. 1. Bond with 120 to seal.

At this time, even if pressure or the like is applied to the substrate 110, the gap between the pixel P of the substrate 110 and the encapsulation substrate 120 is sufficiently secured by the support layer 350 so that the destruction of the pixel P does not occur. .

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Naturally, it belongs to

As described above, the organic light emitting diode display according to the present invention can sufficiently secure the gap between the pixel of the substrate and the encapsulation substrate by the support layer to prevent the destruction of the pixel during the encapsulation process, thereby improving reliability and display quality. have.

In addition, the manufacturing method of the organic light emitting diode display according to the present invention does not further perform a separate mask process for forming a support layer, and thus does not increase manufacturing cost.

Claims (11)

A substrate including a pixel including a light emitting unit and a non-light emitting unit; A light emitting device formed on the light emitting part and including a first electrode, an organic light emitting layer, and a second electrode; A pixel defining layer separating the first electrode from the first electrode of an adjacent pixel and having an opening formed on an entire surface of the substrate and partially exposing the non-light emitting portion; A support layer formed by being partially protruded over the pixel defining layer and buried in an opening of the pixel defining layer An organic light emitting display device comprising a. According to claim 1, And a planarization layer formed under the pixel defining layer. The planarization layer has an opening corresponding to the opening of the pixel defining layer, The organic light emitting display device in which the support layer is embedded in the opening of the planarization layer. The method according to claim 1 or 2, The organic light emitting display device of which the support layer is made of an inorganic insulating material or an organic insulating material. The method of claim 3, wherein An organic light emitting display device in which the inorganic insulating material is made of silicon oxide or silicon nitride. The method according to claim 1 or 2, An organic light emitting display device having a protruding thickness of about 0.3 μm to about 10 μm. Preparing a substrate in which a light emitting unit and a non-light emitting unit are defined; Forming a first electrode on a light emitting portion of the substrate; Forming a pixel defining layer on an entire surface of the substrate; Forming a first opening exposing the first electrode and a second opening partially exposing the non-light emitting portion in the pixel defining layer; Forming an organic emission layer over the first electrode exposed by the first opening; Forming a support layer which partially protrudes over the pixel defining layer while filling the second opening; And Forming a second electrode on the front surface of the substrate Method of manufacturing an organic light emitting display device comprising a. The method of claim 6, Before forming the first electrode Forming a planarization film on the entire surface of the substrate, And forming an opening penetrating the second opening of the pixel defining layer in the planarization film. The method according to claim 6 or 7, And the support layer is formed of an inorganic insulating material or an organic insulating material. The method of claim 8, An organic light emitting display device in which the inorganic insulating material is made of silicon oxide or silicon nitride. The method of claim 8, And the supporting layer is formed by coating and patterning the inorganic insulating material or the organic insulating material on the entire surface of the substrate to fill the second opening of the pixel defining layer by an SJ process. The method according to claim 6 or 7, A method of manufacturing an organic light emitting display device having a protruding thickness of about 0.3 μm to about 10 μm.

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