KR100611213B1 - Method for formming active matrix type organic luminescence electro device having separator and apparatus thereby - Google Patents

Abstract

The present invention relates to a method of manufacturing an active matrix type organic light emitting display device having a separator, and an organic light emitting display device accordingly.

In the method of manufacturing an organic light emitting display device according to the present invention, forming a planarization film on the entire surface of a substrate on which a source electrode and a drain electrode are formed to form a pixel, and etching the planarization film to open one of the source electrode and the drain electrode. Forming a via hole, forming a separator having a predetermined pattern for dividing the pixel, forming a cathode electrode to bury the via hole, forming a light emitting layer on the substrate, and forming a light emitting layer on the substrate; The organic light emitting device according to the present invention comprises the step of forming an anode electrode, the planarization film formed on a substrate having a via hole for opening any one of the source electrode / drain electrode for forming a pixel, the pixel A separator having a predetermined pattern formed on the planarization layer and dividing the via hole Buried sikimyeo it characterized in that formed by a cathode electrode, an anode electrode formed on the light emitting layer and the light-emitting layer formed on the cathode formed between the separators.

Therefore, since the cathode electrode is oxidized and the work function characteristic is lowered, the luminous efficiency of the completed organic light emitting diode can be prevented from being lowered.

Description

TECHNICAL FIELD OF THE INVENTION A method for manufacturing an active matrix type organic light emitting device having a separator and an organic light emitting device according to the same.

1 is a cross-sectional view illustrating a conventional method for manufacturing an active matrix type organic light emitting display device and an organic light emitting display device according to the same.

2A to 2J are cross-sectional views illustrating a method of manufacturing an active matrix type organic light emitting display device having a separator according to an embodiment of the present invention and an organic light emitting display device according to the present invention.

<Description of Symbols for Main Parts of Drawings>

10, 40: substrate 12, 42: buffer layer

14, 44: semiconductor layer 45: source region / drain region

16, 46: gate insulating film 18, 48: gate

19, 49: contact hole 20, 50: interlayer insulating film

21, 51: source electrode / drain electrode 22, 52: planarization film

23, 53: via hole 24, 56: cathode electrode

26, 58: light emitting layer 28, 60: anode electrode

30, 62: protective film 54: separator

The present invention relates to a method of manufacturing an active matrix type organic light emitting display device having a separator and an organic light emitting display device according to the present invention. More specifically, a cathode and a light emitting layer are formed using a separator. The present invention relates to a method of manufacturing an active matrix type organic light emitting display device having a patterning separator, and to an organic light emitting display device according to the present invention.

In general, organic light emitting diodes may be classified into a passive matrix type requiring a separate driving source and an active matrix type integrally provided with a thin film transistor functioning as a switching element.

Since the active matrix type organic light emitting diode is indirectly driven by a thin film transistor which is a switching device, the voltages supplied to the pixels can be completely independent of each other and be continuous, and thus have advantages such as high resolution, high image quality, and large area. have.

In addition, the organic light emitting diode may be divided into a back light emitting structure emitting light emitted from the light emitting layer in a downward direction of the substrate and a top light emitting structure emitting in an upward direction of the substrate.

1 is a cross-sectional view for explaining a method of manufacturing a conventional active matrix type organic light emitting display device and a related organic light emitting display device as a front light emitting structure.

In the conventional method of manufacturing an active matrix type organic light emitting display device, as shown in FIG. 1, a polysilicon layer is formed on a substrate 10 on which a buffer layer 12 is formed, and then patterned to form a semiconductor. Layer 14 is formed. Next, a gate insulating layer 16 is formed on the semiconductor layer 14, a gate metal material is deposited on the semiconductor layer 14, and then patterned to form the gate 18 on the gate insulating layer 16 on the semiconductor layer 14. Form. Subsequently, one of the n-type and p-type impurities is ion implanted into the semiconductor layer 14 using the gate 18 as a mask, so that the high concentration source region / drain region 15a, in the semiconductor layer 14 on both sides of the gate 18, is implanted. 15b). Subsequently, an interlayer insulating film 20 made of an oxide film is formed on the substrate 10 on which the source / drain regions 15a and 15b are formed, and a contact hole for connecting the source electrode / drain electrode to be formed in a subsequent step ( 19a, 19b). In this case, the contact holes 19a and 19b are formed by etching the interlayer insulating film 20 and the gate insulating film 16 to expose the source / drain regions 15a and 15b. Subsequently, a metal material is deposited on the interlayer insulating film 20 including the contact holes 19a and 19b and then patterned to contact the source / drain regions 15a and 15b through the contact holes 19a and 19b, respectively. Source and drain electrodes 21a and 21b are formed. Next, a planarization film 22 is formed on the substrate 10 on which the source and drain electrodes 21a and 21b are formed. Subsequently, in order to connect the cathode electrode to be formed in a subsequent process, one of the source electrode 21a and the drain electrode 21b may be a via hole in the planarization layer 22 so that the source electrode 21a is opened. ). Subsequently, a conductive film is formed on the planarization film 22 including the via hole 23 by depositing an opaque conductive material having a high reflectance and a low work function, such as Al and Ag. Subsequently, after the photoresist pattern is formed on the conductive film, an etching process is performed to form the conductive film pattern, and the photoresist pattern is removed with an etchant. By performing the photolithography process, the cathode electrode 24 connected to the source electrode 21a is formed through the via hole 23, and the cathode electrode 24 simultaneously functions as a reflective film of the top light emitting structure. Will be performed. In this case, the conductive film to be formed as the cathode electrode 24 is exposed to the external environment due to the movement of the substrate 10 for the photolithography process, so that the conductive film may be oxidized in response to moisture, air, etc. in the external environment. . Next, the deposition process is performed by placing a mask having a predetermined circuit pattern on the substrate 10 on which the cathode electrode 24 is formed. Organic materials such as anthracene, poly (p-phenylenevinylene) (PPV), and polythiophene (PT) are deposited on the cathode electrode 24 to form the emission layer 26. At this time, the substrate 10 is exposed to an external environment such as moisture, air, etc. in the process of moving the substrate 10 having the cathode electrode 24 formed thereon to the deposition facility in order to deposit and form the light emitting layer 26. This can be oxidized. Subsequently, an entire surface deposition process is performed on the substrate 10 on which the light emitting layer 26 is formed, such as Al and Ag forming the cathode electrode 24 such as indium tin oxide (ITO) and indium oxide (IZO) (In ₂ O ₃ Zn5). In comparison, a transparent conductive material having a relatively high work function is deposited on the light emitting layer 26 to form an anode electrode 28. Finally, the protective film 30 is formed on the substrate 10 on which the anode electrode 28 is formed.

However, in the conventional method of manufacturing an active matrix type organic light emitting display device, a conductive film for forming a cathode electrode is formed during a photolithography process involving a photo process and an etching process to form a cathode under the light emitting layer. Oxidized due to exposure to external environment such as air.

In addition, after the cathode is formed by performing the photolithography process, the substrate is exposed to the external environment during the process of moving the substrate to the deposition apparatus to form the light emitting layer, so that the upper portion of the cathode is further oxidized.

Accordingly, there is a problem in that the light emission efficiency of the active matrix type organic light emitting display device is degraded due to a decrease in the work function of the cathode.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method of manufacturing an active matrix type organic light emitting display device having a separator capable of dividing each pixel and preventing the cathode from being oxidized, and an organic light emitting display device accordingly.

Another object of the present invention is to prepare an active matrix type organic light emitting display device having a separator capable of improving process efficiency by dividing each pixel into a separator and eliminating a separate mask fabrication process, and an organic light emitting display device accordingly. To provide.

In order to achieve the above object of the present invention, a method of manufacturing an active matrix type organic light emitting display device having a separator according to the present invention comprises the steps of: forming a planarization film on the entire surface of a substrate on which a source electrode and a drain electrode are formed to form a pixel; ; Etching the planarization layer so as to open any one of the source electrode and the drain electrode to form a via hole; Forming a separator having a predetermined pattern for dividing the pixel on the substrate on which the via hole is formed; Forming a cathode electrode for embedding the via hole on the substrate including the separator; Forming a light emitting layer having a top emission on the substrate including the cathode electrode; And forming an anode on the substrate including the light emitting layer.

Here, the anode electrode is preferably formed to have a structure connected beyond the separator by adjusting the thickness of the cathode, the light emitting layer and the anode electrode.

The separator may have a thickness equal to or greater than the thickness of the cathode electrode and the light emitting layer, and the cathode electrode, the light emitting layer, and the anode may be formed in-line in the same deposition apparatus.

In addition, a protective film may be further formed on the substrate on which the anode electrode is formed.

In addition, an active matrix type organic light emitting display device having a separator according to the present invention includes a planarization film formed on a substrate having a via hole for opening any one of a source electrode and a drain electrode for forming a pixel; A separator having a predetermined pattern formed on the planarization film so as to divide the pixel; A cathode electrode buried in the via hole and formed between the separators; An emission layer formed on the cathode electrode; And an anode electrode formed on the light emitting layer.

Here, the separator may be formed of any one of a photoresist pattern, an oxide film pattern, and a silicon nitride film pattern, and the separator may be formed of an inverted phase structure inclined from an upper direction to a lower direction.

The separator may have a thickness equal to or greater than the thickness of the cathode electrode and the light emitting layer, and the organic light emitting diode may have a top light emitting structure.

In addition, the anode electrode has a structure connected over the separator, a protective film may be further provided on the substrate on which the anode electrode is formed.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2A to 2J are cross-sectional views illustrating a method of manufacturing an active matrix type organic light emitting display device having a top light emitting structure and an organic light emitting display device according to the present invention.

In the method of manufacturing a matrix type organic light emitting display device having a separator according to the present invention, as shown in FIG. 2A, a buffer layer of an oxide film is formed on a substrate 40 made of a material such as glass, synthetic resin, or the like by thermal oxidation. To form 42. Next, after the polysilicon film is formed on the buffer layer 42, a semiconductor layer 44 having a predetermined pattern for forming a pixel is formed by performing a normal photolithography process.

Next, as shown in FIG. 2B, the gate insulating layer 46 is formed on the buffer layer 42 including the semiconductor layer 44. Subsequently, a gate metal material is deposited on the gate insulating layer 46, and then a normal photolithography process is performed to form a gate 48 on the gate insulating layer 46 on the semiconductor layer 44. Subsequently, one of n-type or p-type impurities is implanted into the semiconductor layer 44 to form high concentration source / drain regions 45a and 45b in the semiconductor layers 44 on both sides of the gate 48.

Subsequently, as shown in Fig. 2C, an interlayer insulating film 50 made of an oxide film is formed on the substrate 40 on which the source / drain regions 45a and 45b are formed by a thermal oxidation method or the like. Subsequently, contact holes 49a and 49b for connecting the source electrode and the drain electrode to be formed in a subsequent step are formed. In this case, the contact holes 49a and 49b are formed by etching the interlayer insulating layer 50 to expose the source / drain regions 45a and 45b.

Subsequently, as shown in FIG. 2D, a metal material is formed on the interlayer insulating layer 50 including the contact holes 49a and 49b, and then the photolithography process is performed to perform the source through the contact holes 49a and 49b. Source / drain electrodes 51a and 51b are formed in contact with the regions / drain regions 45a and 45b, respectively.

Next, as shown in FIG. 2E, the planarization film 52 is formed of acryl resin or the like on the substrate 40 on which the source and drain electrodes 51a and 51b are formed. Subsequently, the via hole 53 is etched by etching the planarization layer 52 so that the source electrode 51a is opened as an example of the source electrode 51a or the drain electrode 51b to connect the cathode electrode to be formed in a subsequent process. Form.

Subsequently, after the photoresist is applied onto the planarization film 52 including the via holes 53 as shown in Fig. 2F, each pixel is divided by performing a conventional photolithography process, and the upper direction to the lower direction. A separator pattern 54 having an inclined reversed phase structure is formed.

Here, the thickness of the separator 54 is the same or thicker than the thickness of the cathode electrode and the light emitting layer formed in a subsequent process so that the light emitting layer formed by the subsequent process exceeds the range of each pixel to function as a switching element. It is desirable to prevent uncontrollability by the transistor. The separator 54 having the reverse phase structure is formed by applying a negative type photoresist on the planarization film 52 and performing a photo process and a developing process suitable for the pixel structure. 54) The pattern formation method is known to those skilled in the art that can be obtained by appropriately adjusting the exposure amount or developer.

In addition, in the present embodiment, the present invention is limited to the separator 54 made of photoresist, but it will be obvious that a reverse phase separator made of an oxide film, a silicon nitride film, or the like can be employed by performing a photo process.

Next, as shown in FIG. 2G, the reflectance is high and high on the substrate 40 on which the separator 54 of the reverse phase structure is formed, such as Al / LiF, Al / Ca / LiF, Ag / Ca, or Mg (Ag). A conductive material having a work function, which is easy to inject a ruler, is deposited on the entire surface to be patterned to form a cathode electrode 56 which is connected to the source electrode 51a through the via hole 53 and simultaneously performs a reflective film function of the front light emitting structure.

At this time, the separator 54 having the reverse phase structure is provided on the planarization layer 52, so that the conductive material deposited on the substrate 40 is spaced apart from the separator 54 by a predetermined distance, so that each pixel is clearly divided and the separator 54 is separated. Patterning is deposited over the planarization film 52 and the separator 54 in between.

Subsequently, as shown in FIG. 2H, on the substrate 40 on which the cathode electrode 56 is formed.

The light emitting layer 58 is formed by patterning the organic material of the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer.

At this time, the separator 54 is provided on the planarization layer 52, so that the organic layer deposited on the substrate 40 is formed on the cathode electrode 56 between the separators 54 and the cathode electrode 56 on the separator 54. Patterning is deposited over the conductive material to form the substrate.

In addition, the light emitting layer 58 is formed by depositing in-line inside the deposition apparatus in which the cathode electrode 56 is formed, thereby preventing contact with the external environment.

Next, as shown in FIG. 2I, sputtering a metal material such as ITO (Indium Tin Oxide) or IZO (In ₂ O ₃ Zn5), which is easy to inject holes, onto the entire surface of the substrate 40 on which the light emitting layer 58 is formed. Alternatively, the anode electrode 60 is formed by depositing the entire surface using an E-beam.

In this case, the separator 54 is provided on the planarization layer 52, so that a part of the metal material deposited on the substrate 40 is deposited on the light emitting layer 58 between the separators 54 and the light emitting layer 58 on the separator 54. Is deposited on top of the organic layer to form).

In addition, the anode electrode 60 is formed in a structure connected beyond the separator 54 so that the entire anode electrode 60 can be used as a common electrode.

In addition, the anode electrode 60 is formed by depositing in-line inside the deposition apparatus in which the light emitting layer 58 is formed, thereby preventing contact with the external environment.

Finally, as shown in FIG. 2J, the passivation layer 62 is formed on the substrate 40 on which the anode electrode 60 is formed.

As described above, according to the present invention, the cathode electrode and the light emitting layer are formed in-line patterned by using a separator for dividing each pixel, and the anode electrode is also deposited in-line on top of the cathode electrode, so that the outside of moisture, air, etc. Exposure to the environment can prevent oxidation.

Therefore, the work function of the cathode is reduced, thereby reducing the luminous efficiency of the completed active matrix organic light emitting device.

In addition, by forming a cathode and a light emitting layer by using a separator, an additional mask fabrication process is omitted, thereby improving process efficiency.

Although the above has been described with reference to the preferred embodiment of the present invention, those skilled in the art will be variously modified and modified within the scope of the present invention without departing from the spirit and scope of the present invention described in the claims below. It will be appreciated that it can be changed.

Claims (12)

Forming a planarization film on the entire surface of the substrate on which source and drain electrodes are formed to form pixels; Etching the planarization layer so as to open any one of the source electrode and the drain electrode to form a via hole; Forming a separator having a predetermined pattern for dividing the pixel on the substrate on which the via hole is formed; Forming a cathode electrode for embedding the via hole on the substrate including the separator; Forming a light emitting layer having a top emission on the substrate including the cathode electrode; And Forming an anode on the substrate including the light emitting layer; A method of manufacturing an active matrix type organic light emitting display device having a separator, characterized in that it comprises a. The method of claim 1, wherein the anode electrode is formed in a structure connected over the separator by controlling the formation thickness of the cathode electrode, the light emitting layer and the anode electrode of the active matrix type organic light emitting device having a separator. Way. The method of claim 1, wherein the separator is formed to have a thickness equal to or greater than the thickness of the cathode electrode and the light emitting layer. The method of claim 1, wherein the cathode electrode, the light emitting layer, and the anode electrode are formed in-line in the same deposition apparatus. The method of manufacturing an active matrix type organic light emitting display device with a separator according to claim 1, further comprising a protective film formed on the substrate on which the anode electrode is formed. A planarization film formed on a substrate with a via hole for opening one of a source electrode and a drain electrode for forming a pixel; A separator having a predetermined pattern formed on the planarization layer so as to divide the pixel; A cathode electrode buried in the via hole and formed between the separators; An emission layer formed on the cathode electrode; And An anode formed on the light emitting layer; An active matrix type organic light emitting display device having a separator, comprising: a separator. The active matrix type organic light emitting device according to claim 6, wherein the separator comprises one of a photoresist pattern, an oxide film pattern, and a silicon nitride film pattern. 8. The active matrix type organic light emitting device according to claim 7, wherein the separator has an inverted phase structure inclined from top to bottom. 7. The active matrix type organic light emitting device according to claim 6, wherein the separator has a thickness equal to or greater than a thickness of the cathode electrode and the light emitting layer. 7. The active matrix type organic light emitting display device according to claim 6, wherein the organic light emitting display device has a front light emitting structure. The active matrix type organic light emitting display device according to claim 6, wherein the anode electrode is formed to be connected beyond the separator. The active matrix type organic light emitting device according to claim 6, wherein a protective film is further provided on the substrate on which the anode electrode is formed.

Images