KR100560781B1 - organic electroluminescence display device and fabrication method of the same - Google Patents

Abstract

An organic light emitting display device and a method of manufacturing the same are provided. The organic light emitting display device may include a lower substrate having a pixel portion region and an encapsulation portion region; An inorganic film on the pixel portion region and the encapsulation portion region; An organic planarization film on the inorganic film in the pixel portion region; An adhesive contacting the inorganic film of the encapsulation area; And an upper substrate coupled to the lower substrate through the adhesive. As a result, the adhesive is formed in contact with the inorganic film on the lower substrate, thereby making the sealing stronger. As a result, it is possible to suppress the penetration of moisture and oxygen to improve the lifespan and luminous efficiency characteristics of the organic light emitting display device.

OLED display device, encapsulation method, inorganic film, adhesive

Description

Organic electroluminescence display device and fabrication method thereof {organic electroluminescence display device and fabrication method of the same}

1 is a cross-sectional view illustrating a method of manufacturing an organic light emitting display device according to the prior art.

2A through 2C are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention.

(Explanation of symbols for main parts of drawing)

100: lower substrate 220: inorganic film

230: organic flattening film 500: half-tone mask

800: adhesive 900: upper substrate

The present invention relates to an organic light emitting display device and a method of manufacturing the same, and more particularly, to an organic light emitting display device having an improved sealing property and a method of manufacturing the same.

Organic electroluminescence display devices have the advantage of providing a clear moving image with wide viewing angle and fast response speed even among flat panel display devices that have the advantages of small size and light weight. It is attracting attention as a display device.

The organic light emitting display device includes a lower substrate on which a pixel portion region is located, an upper substrate for protecting the pixel portion region from external moisture, and an adhesive for bonding the upper substrate to the lower substrate. Bonding the lower substrate with the upper substrate by an adhesive is called encapsulation. The encapsulation protects the pixel region from external moisture and oxygen, thereby improving lifespan and maintaining light emission efficiency of the organic light emitting display device. Plays an important role.

1 is a cross-sectional view illustrating a method of manufacturing an organic light emitting display device according to the prior art.

Referring to FIG. 1, a lower substrate 10 having an encapsulation portion region a and a pixel portion region b is provided. A thin film transistor (not shown) and a metal wiring (not shown) are formed in the pixel area (b) of the lower substrate 10. Subsequently, a passivation layer 20 that protects the thin film transistor and the metal wiring is formed on the entire lower substrate 10 including the encapsulation portion region a, and the organic planarization layer 30 is formed on the passivation layer 20. To form. The protective film 20 is formed of an inorganic film such as a nitride film, and the organic flattening film 30 is formed of an organic film such as benzocyclobutadiene (BCB).

Subsequently, a via hole 35 exposing the lower substrate and more particularly the metal wiring is formed in the organic flattening film 30, and a first electrode is formed on the organic flattening film 30 including the via hole 35. 40, but the first electrode 40 is formed to fill the via hole 35. An organic light emitting layer 50 is formed on the first electrode 40, and a second electrode 60 is formed on the organic light emitting layer 50. In this case, the first electrode 40, the organic light emitting layer 50, and the second electrode 60 are formed only on the pixel portion region b. Therefore, the organic flattening film 30 is exposed on the encapsulation region a.

The adhesive 80 is applied to the exposed organic planarization layer 30 on the encapsulation area a, and the lower substrate 10 and the upper substrate 90 are bonded to each other through the adhesive 80. The organic light emitting display device is completed by curing the adhesive 80.

The adhesive 80 is cured by heat or ultraviolet rays. The heat or ultraviolet rays also affect the organic planarization layer 30 in contact with the adhesive 80. As described above, the organic flattening layer 30 is generally formed of an organic layer. The organic flattening layer 30 may be damaged during curing of the adhesive 80 because the organic layer is sensitive to heat or ultraviolet rays. . In this case, not only the moisture and oxygen from the outside may penetrate through the damaged organic flattening layer 30, but the damaged organic flattening layer 30 may have poor adhesive properties with the adhesive 80, thereby preventing the lower substrate. It may cause the peeling of the 10 and the upper substrate 90. As a result, forming the adhesive 80 in contact with the organic flattening film 30 which is an organic film causes deterioration of encapsulation properties, which in turn leads to deterioration of lifetime and luminous efficiency characteristics of the organic light emitting display device.

SUMMARY OF THE INVENTION The present invention has been made in an effort to solve the problems of the prior art, and to provide an organic light emitting display device having improved sealing characteristics.

Another object of the present invention is to solve the problems of the prior art, and to provide a method of manufacturing an organic light emitting display device capable of improving the sealing characteristics.

In order to achieve the above technical problem, the present invention provides an organic light emitting display device. The organic light emitting display device may include a lower substrate having a pixel portion region and an encapsulation portion region; An inorganic film on the pixel portion region and the encapsulation portion region; An organic planarization film on the inorganic film in the pixel portion region; An adhesive contacting the inorganic film of the encapsulation area; And an upper substrate coupled to the lower substrate through the adhesive.

The organic light emitting display device may be a top emission type.

The organic light emitting display device may further include a thin film transistor and a metal wiring interposed between the inorganic film on the pixel portion region and the lower substrate, and the inorganic film may be a film for protecting the thin film transistor and the metal wiring.

The inorganic film may be a nitride film.

The present invention provides a method of manufacturing an organic light emitting display device. The manufacturing method provides a lower substrate having a pixel portion region and an encapsulation portion region; Forming a thin film transistor having a source / drain electrode on the pixel portion region; Forming an inorganic film on an entire surface of the lower substrate; Forming an organic planarization film on the inorganic film; A portion of the organic planarization layer and the inorganic layer underneath the pixel portion region is removed to form a via hole exposing the source / drain electrodes, and an organic leveling layer on the encapsulation portion is removed to expose the inorganic layer underneath. To; Applying an adhesive to the exposed inorganic film; Attaching an upper substrate to the adhesive to bond the lower substrate and the upper substrate.

Simultaneously forming a via hole on the pixel portion region and exposing an inorganic film on the encapsulation portion region by applying a photoresist on the organic planarization film; By exposing the photoresist using a half-tone mask, an opening for exposing the organic planarization film in the predetermined pixel portion region is formed, a first thickness portion is drawn in the encapsulation portion region, and the opening portion and the first thickness portion are formed. Forming a photoresist pattern having a second thickness portion thicker than the first thickness portion in the excluded region; By removing the organic planarization film exposed in the opening and the inorganic film thereunder to form a via hole for exposing the source / drain electrodes, and by removing the first thickness portion of the photoresist pattern and the organic planarization film thereunder It is preferable to include exposing the inorganic film of the sealing region.

The inorganic film may be formed using a nitride film.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to describe the present invention in more detail. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms.

2A through 2C are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention.

In the drawings, the portion denoted by reference numeral a denotes the encapsulation portion region, and the portion denoted by the reference numeral b denotes the pixel portion region.

Referring to FIG. 2A, a lower substrate 100 having an encapsulation portion a and a pixel portion region b is provided. A buffer layer 110 is formed on the entire lower substrate 100, and an active layer 120 having a source / drain region 125 and a channel region 123 is formed on the buffer layer 110. A gate insulating layer 130 is formed on the active layer 120, and a gate 140 is formed on the gate insulating layer 130. A source / drain electrode 160 formed on the entire lower substrate 100 including the gate 140, and in contact with the source / drain regions 125 on the interlayer insulating layer 150; Metal wiring (not shown) is formed. As a result, a thin film transistor including the active layer 120, the gate insulating layer 130, the gate 140, and the source / drain electrode 160 is formed.

Subsequently, an inorganic film 220 is formed on the entire lower substrate 100 on which the source / drain electrodes 160 are formed, and an organic planarization film 230 is formed on the inorganic film 220. The inorganic layer 220 may be formed of, for example, a nitride layer to protect the thin film transistor and the metal wiring. The organic planarization film 230 is a film intended to alleviate the topology due to the thin film transistor and the metal wiring, and is generally formed of an organic film and formed of, for example, BenzoCycloButene (BCB). do.

Subsequently, a photoresist is formed on the organic planarization film 230, and the photoresist is exposed using the half-tone mask 500 to form a photoresist pattern 235. The half-tone mask 500 includes a transparent portion 500a for transmitting all of the light, a half-tone portion 500b for transmitting only a portion of the light, and a blocking portion 500c for blocking all of the light. When the photoresist is a positive resist, the photoresist pattern 235 exposed by the first half-tone mask 500 may have an opening 235a exposing the organic planarization layer 230 in the pixel portion region b. ), A first thickness portion 235b in the encapsulation portion region a, and a second thickness portion 235c in the region except the opening portion 235a and the first thickness portion 235b. In this case, the opening portion 235a is formed to correspond to the transparent portion 500a of the first half-tone mask 500, and the first thickness portion 235b corresponds to the half-tone portion 500b. The second thickness portion 235c is formed to correspond to the blocking part 500c. Accordingly, the first thickness portion 235b formed to correspond to the half-tone portion 500b is thinner than the second thickness portion 235c formed to correspond to the blocking portion 500c.

Referring to FIG. 2B, a via hole exposing the source / drain electrode 160 on the lower substrate 100 by etching the organic planarization layer 230 exposed in the opening 235a and the inorganic layer 220 thereunder. The inorganic layer 220 of the encapsulation region a is formed by etching the first thickness portion 235b of the photoresist pattern 235 and the organic flattening layer 230 thereunder. Expose In the etching process, when the organic planarization layer 230 and the lower inorganic layer 220 are etched in the pixel portion b, the photoresist pattern 235 may be removed from the encapsulation portion a. The first thickness portion 235b and the organic planarization layer 230 at the bottom thereof are etched together, which causes a delay in etching time due to the first thickness portion 235b in the encapsulation region a. Because. In this case, the second thickness portion 235c of the photoresist pattern 235 is also etched to lower the level difference. As described above, the via hole 230a is formed on the pixel area b using a half-tone mask, and the inorganic film 220 of the encapsulation area a is exposed to reduce the mask. Can be achieved.

Referring to FIG. 2C, the organic leveling layer 230 including the via hole 230a of the pixel portion region b is exposed by removing the second thickness portion 235c having the step difference lowered. A first electrode 240, an organic light emitting layer 250, and a second electrode 260 are formed on the exposed organic planarization layer 230, and the first electrode 240 fills the via hole 230a. At the same time, it is formed to extend on the organic planarization film 230. In this case, the first electrode 240, the organic light emitting layer 250, and the second electrode 260 are patterned to be formed only on the pixel portion region b. The organic light emitting layer 250 may include at least a light emitting layer, and may further include at least one selected from a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer in addition to the light emitting layer.

Subsequently, an adhesive 800 is applied to the exposed inorganic layer 220 on the encapsulation area a, and an upper substrate 900 is attached to the adhesive 800 to form the lower substrate 100 and the upper substrate. Combine 900. Next, the organic light emitting display device is completed by curing the adhesive 800 using heat or ultraviolet rays.

In general, since the inorganic film is insensitive to heat or ultraviolet rays, the inorganic film 220 in contact with the adhesive 800 is not damaged during the curing process. Therefore, forming the adhesive 800 in contact with the inorganic layer 220 may allow the lower substrate 100 and the upper substrate 900 to be bonded to each other.

As described above, according to the present invention, the encapsulation is strengthened by forming the adhesive so as to be in contact with the inorganic film on the lower substrate by enclosing the lower substrate with an adhesive. As a result, it is possible to suppress the penetration of moisture and oxygen to improve the lifespan and luminous efficiency characteristics of the organic light emitting display device.

In addition, by using the half-tone mask to expose the inorganic layer of the encapsulation region and to form a via hole in the pixel region, the mask can be reduced.

Claims (7)

delete delete delete delete Providing a lower substrate having a pixel portion region and an encapsulation portion region; Forming a thin film transistor having a source / drain electrode on the pixel portion region; Forming an inorganic film on an entire surface of the lower substrate; Forming an organic planarization film on the inorganic film; A portion of the organic planarization layer and the inorganic layer underneath the pixel portion region is removed to form a via hole exposing the source / drain electrodes, and an organic leveling layer on the encapsulation portion is removed to expose the inorganic layer underneath. To; Applying an adhesive to the exposed inorganic film; And attaching an upper substrate to the adhesive to bond the lower substrate to the upper substrate. The method of claim 5, While forming a via hole on the pixel portion region, exposing an inorganic film on the encapsulation portion region Applying a photoresist on the organic planarization film; By exposing the photoresist using a half-tone mask, an opening for exposing the organic flattening film in the pixel portion region is drawn, a first thickness portion is drawn in the encapsulation portion, and the opening and the first thickness portion are excluded. Forming a photoresist pattern having a second thickness portion thicker than the first thickness portion in the region; By removing the organic planarization film exposed in the opening and the inorganic film thereunder to form a via hole for exposing the source / drain electrodes, and by removing the first thickness portion of the photoresist pattern and the organic planarization film thereunder A method of manufacturing an organic light emitting display device comprising exposing an inorganic film in an encapsulation region. The method of claim 5, And the inorganic layer is formed using a nitride layer.

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