KR100276971B1 - 고체촬상소자의 구동방법 - Google Patents
고체촬상소자의 구동방법 Download PDFInfo
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- KR100276971B1 KR100276971B1 KR1019900008215A KR900008215A KR100276971B1 KR 100276971 B1 KR100276971 B1 KR 100276971B1 KR 1019900008215 A KR1019900008215 A KR 1019900008215A KR 900008215 A KR900008215 A KR 900008215A KR 100276971 B1 KR100276971 B1 KR 100276971B1
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- 238000000034 method Methods 0.000 title claims description 28
- 238000003384 imaging method Methods 0.000 title claims description 14
- 239000007787 solid Substances 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 36
- 238000005036 potential barrier Methods 0.000 claims description 34
- 238000009792 diffusion process Methods 0.000 claims description 21
- 238000007599 discharging Methods 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 108091006146 Channels Proteins 0.000 description 63
- 230000005540 biological transmission Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 238000009825 accumulation Methods 0.000 description 6
- 230000001629 suppression Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000003111 delayed effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 244000144992 flock Species 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/745—Circuitry for generating timing or clock signals
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- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (4)
- 한 도전형 반도체기판(1)의 한 주면에 역도전형의 확산영역(4)가 설치됨과 동시에 이 확산영역(4)내에 광전변환에 의해 발생하는 광전하(e)를 축적 전송하는 복수의 확산영역(4)가 채널스톱영역(3)으로 서로 분리되어 배열형성되고, 상기 확산영역중의 과다한 광전하(e)를 상기 반도체기판(1)에 받아들이는 CCD고체촬상소자의 구동방법에 있어서, 상기 확산영역(4)와 상기 반도체기판(1)의 사이에 전위장벽을 형성할수 있는 상기 반도체기판(1)의 전위에 대하여, 상기 반도체기판(1)을 고전위로하여 상기 전위장벽을 소멸시킴과 동시에, 상기 확산영역(4)상에 설치되어진 전송전극(5a)(5b)를 펄스구동하는 것으로 상기 확산영역(4)중의 광전하(e)를 전송구동하여, 상기 광전하(e)를 상기 확산영역(4)에서 상기 반도체기판(1)측으로 배출시키는 것을 특징으로 하는 고체촬상소자의 구동방법.
- 광전변환에 의해 발생하는 광전하(e)를 축적전송하는 복수의 채널영역(24)가 채널스톱영역(22)으로 서로 분리되어 배열형성되고, 상기 채널스톱영역(22)내에 설치되어진 오버 플로우 드레인(23)에 상기 채널영역(24)중의 과다한 광전하를 받아들이는 CCD고체촬상소자의 구동방법에 있어서, 상기 채널영역(24)와 상기 오버 플로우 드레인(23)의 사이에 전위장벽을 형성할수 있는 상기 오버 플로우 드레인(23)의 전위에 대하여, 상기 오버 플로우 드레인(23)을 고전위로하여 상기 전위장벽을 소멸시킴과 동시에, 상기 채널영역(24)상에 설치되어진 전송전극(25)(26)을 펄스 구동하는 것으로 상기 채널영역(24)중의 광전하를 전송구동하여, 상기 광전하를 상기 채널영역(24)에서 상기 오버 플로우 드레인(23)으로 배출시키는 것을 특징으로 하는 고체촬상소자의 구동방법.
- 제1항에 있어서, 상기 고체촬상소자의 구동방법에 있어서, 수평 및 수직방향으로 주사되는 상기 고체촬상소자의 수직주사기간중, 제 1 기간에 상기 확산영역(4)중의 광전하를 상기 반도체기판(1)로 배출시킨후에, 남은 제 2 기간에 상기 확산영역(4)에 광전하를 축적하고, 상기 제 2 의 기간에 얻은 광전하를 한 화면의 영상정보로서 출력하는 것을 특징으로 하는 고체촬상소자의 구동방법.
- 제2항에 있어서, 상기 고체촬상소자의 구동방법에 있어서, 수평 및 수직방향으로 주사되는 상기 고체촬상소자의 수직주사기간중, 제 1 기간에 상기 채널영역(24)중의 광전하를 상기 오버 플로우 드레인(23)으로 배출시킨후에, 남은 제 2 기간에 상기 채널영역(24)에 광전하를 축적하고, 상기 제 2 의 기간에 얻은 광전하를 한 화면의 영상정보로서 출력하는 것을 특징으로 하는 고체촬상소자의 구동방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1-157369 | 1989-06-20 | ||
JP1157369A JPH0777434B2 (ja) | 1989-06-20 | 1989-06-20 | 固体撮像素子の駆動方法 |
JP1-183976 | 1989-07-17 | ||
JP1183976A JPH0777436B2 (ja) | 1989-07-17 | 1989-07-17 | 固体撮像素子の駆動方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910002243A KR910002243A (ko) | 1991-01-31 |
KR100276971B1 true KR100276971B1 (ko) | 2001-01-15 |
Family
ID=26484847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900008215A KR100276971B1 (ko) | 1989-06-20 | 1990-06-01 | 고체촬상소자의 구동방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5057926A (ko) |
EP (1) | EP0403939B1 (ko) |
KR (1) | KR100276971B1 (ko) |
DE (1) | DE69025651T2 (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04119776A (ja) * | 1990-09-11 | 1992-04-21 | Sony Corp | 固体撮像装置 |
JP2662455B2 (ja) * | 1990-09-13 | 1997-10-15 | シャープ株式会社 | 固体撮像装置 |
JPH04335573A (ja) * | 1991-05-10 | 1992-11-24 | Sony Corp | Ccd固体撮像素子 |
US5233428A (en) * | 1991-11-05 | 1993-08-03 | Loral Fairchild Systems | Electronic exposure control system for a solid state imager |
JP2888719B2 (ja) * | 1993-02-15 | 1999-05-10 | 株式会社東芝 | 固体撮像装置の駆動方法 |
US5982422A (en) * | 1993-06-22 | 1999-11-09 | The United States Of America As Represented By The Secretary Of The Army | Accelerated imaging technique using platinum silicide camera |
JP3251104B2 (ja) * | 1993-07-08 | 2002-01-28 | ソニー株式会社 | 固体撮像装置 |
US5515103A (en) * | 1993-09-30 | 1996-05-07 | Sanyo Electric Co. | Image signal processing apparatus integrated on single semiconductor substrate |
US5978024A (en) * | 1994-04-15 | 1999-11-02 | Lg Semicon Co., Ltd. | Auto variable anti-blooming bias control circuit and method |
JP3213529B2 (ja) * | 1995-11-30 | 2001-10-02 | 三洋電機株式会社 | 撮像装置 |
JP2845216B2 (ja) * | 1996-09-27 | 1999-01-13 | 日本電気株式会社 | 固体撮像装置およびその製造方法 |
JP3370249B2 (ja) * | 1996-12-27 | 2003-01-27 | 松下電器産業株式会社 | 固体撮像装置とその駆動方法および製造方法 |
KR100239409B1 (ko) * | 1997-01-25 | 2000-01-15 | 김영환 | 고체 촬상 소자 |
JP2000092395A (ja) * | 1998-09-11 | 2000-03-31 | Nec Corp | 固体撮像装置およびその駆動方法 |
JP2001156284A (ja) * | 1999-11-25 | 2001-06-08 | Sanyo Electric Co Ltd | 固体撮像素子及びその製造方法 |
JP4289872B2 (ja) * | 2002-11-15 | 2009-07-01 | 三洋電機株式会社 | 固体撮像素子及びその駆動方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4679212A (en) * | 1984-07-31 | 1987-07-07 | Texas Instruments Incorporated | Method and apparatus for using surface trap recombination in solid state imaging devices |
JP2525781B2 (ja) * | 1986-09-11 | 1996-08-21 | 株式会社東芝 | 固体撮像装置の駆動方法 |
US4875100A (en) * | 1986-10-23 | 1989-10-17 | Sony Corporation | Electronic shutter for a CCD image sensor |
GB2196811B (en) * | 1986-10-25 | 1990-05-09 | English Electric Valve Co Ltd | Image sensors |
JPH07118788B2 (ja) * | 1986-10-28 | 1995-12-18 | 株式会社東芝 | 電子スチルカメラ |
US4912560A (en) * | 1988-01-29 | 1990-03-27 | Kabushiki Kaisha Toshiba | Solid state image sensing device |
FR2627314B1 (fr) * | 1988-02-12 | 1990-06-08 | Thomson Csf | Dispositif de lecture de charges pour photosenseur lineaire, avec dispositif d'antieblouissement a structure en ligne |
-
1990
- 1990-06-01 KR KR1019900008215A patent/KR100276971B1/ko not_active IP Right Cessation
- 1990-06-07 US US07/534,236 patent/US5057926A/en not_active Expired - Lifetime
- 1990-06-12 DE DE69025651T patent/DE69025651T2/de not_active Expired - Fee Related
- 1990-06-12 EP EP90111128A patent/EP0403939B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69025651T2 (de) | 1996-08-14 |
EP0403939A3 (en) | 1992-08-12 |
EP0403939A2 (en) | 1990-12-27 |
KR910002243A (ko) | 1991-01-31 |
EP0403939B1 (en) | 1996-03-06 |
DE69025651D1 (de) | 1996-04-11 |
US5057926A (en) | 1991-10-15 |
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