JPWO2023153021A5 - - Google Patents
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- Publication number
- JPWO2023153021A5 JPWO2023153021A5 JP2023503422A JP2023503422A JPWO2023153021A5 JP WO2023153021 A5 JPWO2023153021 A5 JP WO2023153021A5 JP 2023503422 A JP2023503422 A JP 2023503422A JP 2023503422 A JP2023503422 A JP 2023503422A JP WO2023153021 A5 JPWO2023153021 A5 JP WO2023153021A5
- Authority
- JP
- Japan
- Prior art keywords
- plug
- wafer
- conductive
- insertion hole
- ceramic plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003780 insertion Methods 0.000 claims 15
- 230000037431 insertion Effects 0.000 claims 15
- 239000000919 ceramic Substances 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 10
- 239000000463 material Substances 0.000 claims 7
- 239000011248 coating agent Substances 0.000 claims 6
- 238000000576 coating method Methods 0.000 claims 6
- 230000002093 peripheral effect Effects 0.000 claims 5
Claims (10)
前記セラミックプレートを上下方向に貫通するプラグ挿入穴と、
前記セラミックプレートの下面に設けられた導電性基材と、
前記導電性基材に設けられ、前記プラグ挿入穴に連通する連通穴と、
前記ウエハ載置面に載置されるウエハと導通可能なように前記プラグ挿入穴に配置され、下面が前記セラミックプレートの下面の高さ以下に位置し、前記連通穴に供給されたガスが前記ウエハ載置面へ流通するのを許容する導電性プラグと、
を備え、
前記ウエハ載置面は、前記ウエハを支持する多数の小突起を有し、
前記導電性プラグは、前記ウエハと前記小突起と前記ウエハ載置面のうち前記小突起の設けられていない基準面とで囲まれた領域に前記ガスを供給し、
前記導電性プラグの上面は、前記小突起の上面と同じ高さにある、
半導体製造装置用部材。 a ceramic plate having a wafer placement surface on the top surface;
a plug insertion hole that vertically penetrates the ceramic plate;
a conductive base material provided on the lower surface of the ceramic plate;
a communication hole provided in the conductive base material and communicating with the plug insertion hole;
The plug is placed in the plug insertion hole so as to be electrically conductive with the wafer placed on the wafer placement surface, and the lower surface is located below the height of the lower surface of the ceramic plate, and the gas supplied to the communication hole is connected to the plug insertion hole. a conductive plug that allows flow to the wafer mounting surface;
Equipped with
The wafer mounting surface has a large number of small protrusions that support the wafer,
The conductive plug supplies the gas to a region surrounded by the wafer, the small protrusion, and a reference surface on which the small protrusion is not provided on the wafer mounting surface,
the top surface of the conductive plug is at the same height as the top surface of the small protrusion;
Components for semiconductor manufacturing equipment.
前記セラミックプレートを上下方向に貫通するプラグ挿入穴と、 a plug insertion hole that vertically penetrates the ceramic plate;
前記セラミックプレートの下面に設けられた導電性基材と、 a conductive base material provided on the lower surface of the ceramic plate;
前記導電性基材に設けられ、前記プラグ挿入穴に連通する連通穴と、 a communication hole provided in the conductive base material and communicating with the plug insertion hole;
前記ウエハ載置面に載置されるウエハと導通可能なように前記プラグ挿入穴に配置され、下面が前記セラミックプレートの下面の高さ以下に位置し、前記連通穴に供給されたガスが前記ウエハ載置面へ流通するのを許容する導電性プラグと、 The plug is placed in the plug insertion hole so as to be electrically conductive with the wafer placed on the wafer placement surface, and the lower surface is located below the height of the lower surface of the ceramic plate, and the gas supplied to the communication hole is connected to the plug insertion hole. a conductive plug that allows flow to the wafer mounting surface;
を備え、 Equipped with
前記ウエハ載置面は、前記ウエハを支持する多数の小突起を有し、 The wafer mounting surface has a large number of small protrusions that support the wafer,
前記導電性プラグは、前記ウエハと前記小突起と前記ウエハ載置面のうち前記小突起の設けられていない基準面とで囲まれた領域に前記ガスを供給し、 The conductive plug supplies the gas to a region surrounded by the wafer, the small protrusion, and a reference surface on which the small protrusion is not provided on the wafer mounting surface,
前記小突起の上面は、前記ウエハと接触する導電性被膜を有し、 The upper surface of the small protrusion has a conductive coating in contact with the wafer,
前記導電性プラグの上面は、前記導電性被膜よりも低い位置にあり、 The upper surface of the conductive plug is located at a lower position than the conductive coating,
前記導電性プラグは、前記導電性被膜に接続されている、 the conductive plug is connected to the conductive coating;
半導体製造装置用部材。 Components for semiconductor manufacturing equipment.
前記セラミックプレートを上下方向に貫通するプラグ挿入穴と、 a plug insertion hole that vertically penetrates the ceramic plate;
前記セラミックプレートの下面に設けられた導電性基材と、 a conductive base material provided on the lower surface of the ceramic plate;
前記導電性基材に設けられ、前記プラグ挿入穴に連通する連通穴と、 a communication hole provided in the conductive base material and communicating with the plug insertion hole;
前記ウエハ載置面に載置されるウエハと導通可能なように前記プラグ挿入穴に配置され、下面が前記セラミックプレートの下面の高さ以下に位置し、前記連通穴に供給されたガスが前記ウエハ載置面へ流通するのを許容する導電性プラグと、 The plug is placed in the plug insertion hole so as to be electrically conductive with the wafer placed on the wafer placement surface, and the lower surface is located below the height of the lower surface of the ceramic plate, and the gas supplied to the communication hole is connected to the plug insertion hole. a conductive plug that allows flow to the wafer mounting surface;
を備え、 Equipped with
前記プラグ挿入穴は、内周面に雌ネジ部を有し、 The plug insertion hole has a female thread on the inner peripheral surface,
前記導電性プラグは、前記雌ネジ部に螺合する雄ネジ部を外周面に有する、 The conductive plug has a male screw portion on its outer peripheral surface that is screwed into the female screw portion.
半導体製造装置用部材。 Components for semiconductor manufacturing equipment.
請求項１～３のいずれか１項に記載の半導体製造装置用部材。 The material of the conductive plug is Si or SiC,
The member for semiconductor manufacturing equipment according to any one of claims 1 to 3 .
請求項１～３のいずれか１項に記載の半導体製造装置用部材。 An insulating tube is arranged on the inner peripheral surface of the communication hole so as to be in contact with the lower surface of the ceramic plate.
The member for semiconductor manufacturing equipment according to any one of claims 1 to 3 .
前記導電性プラグは、前記雌ネジ部に螺合する雄ネジ部を外周面に有する、
請求項１又は２に記載の半導体製造装置用部材。 The plug insertion hole has a female thread on the inner peripheral surface,
The conductive plug has a male screw portion on an outer peripheral surface that is screwed into the female screw portion.
The member for semiconductor manufacturing equipment according to claim 1 or 2.
前記プラグ挿入穴は、前記拡径部と当接可能な形状となっている、
請求項１又は２に記載の半導体製造装置用部材。 The conductive plug has an expanding diameter portion that increases in diameter from top to bottom,
The plug insertion hole has a shape that can come into contact with the enlarged diameter portion,
The member for semiconductor manufacturing equipment according to claim 1 or 2.
前記導電性プラグは、前記ウエハと前記小突起と前記ウエハ載置面のうち前記小突起の設けられていない基準面とで囲まれた領域に前記ガスを供給する、 The conductive plug supplies the gas to a region surrounded by the wafer, the small protrusion, and a reference surface on which the small protrusion is not provided on the wafer mounting surface.
請求項３に記載の半導体製造装置用部材。 The member for semiconductor manufacturing equipment according to claim 3.
請求項８に記載の半導体製造装置用部材。 The member for semiconductor manufacturing equipment according to claim 8.
前記導電性プラグの上面は、前記導電性被膜よりも低い位置にあり、 The upper surface of the conductive plug is located at a lower position than the conductive coating,
前記導電性プラグは、前記導電性被膜に接続されている、 the conductive plug is connected to the conductive coating;
請求項８に記載の半導体製造装置用部材。 The member for semiconductor manufacturing equipment according to claim 8.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022018429 | 2022-02-09 | ||
| JP2022018429 | 2022-02-09 | ||
| PCT/JP2022/037638 WO2023153021A1 (en) | 2022-02-09 | 2022-10-07 | Member for semiconductor manufacturing device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023153021A1 JPWO2023153021A1 (en) | 2023-08-17 |
| JPWO2023153021A5 true JPWO2023153021A5 (en) | 2024-01-16 |
| JP7483121B2 JP7483121B2 (en) | 2024-05-14 |
Family
ID=87564010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023503422A Active JP7483121B2 (en) | 2022-02-09 | 2022-10-07 | Semiconductor manufacturing equipment parts |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7483121B2 (en) |
| WO (1) | WO2023153021A1 (en) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4557814B2 (en) * | 2005-06-09 | 2010-10-06 | パナソニック株式会社 | Plasma processing equipment |
| JP2011061040A (en) * | 2009-09-10 | 2011-03-24 | Tokyo Electron Ltd | Stage structure and processing apparatus |
| US9349630B2 (en) * | 2013-03-15 | 2016-05-24 | Applied Materials, Inc. | Methods and apparatus for electrostatic chuck repair and refurbishment |
| JP6280012B2 (en) * | 2014-09-29 | 2018-02-14 | 京セラ株式会社 | Sample holder |
| JP7130359B2 (en) * | 2016-12-05 | 2022-09-05 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP6994981B2 (en) * | 2018-02-26 | 2022-01-14 | 東京エレクトロン株式会社 | Manufacturing method of plasma processing equipment and mounting table |
| JP7149739B2 (en) * | 2018-06-19 | 2022-10-07 | 東京エレクトロン株式会社 | Mounting table and substrate processing device |
| US11742781B2 (en) * | 2018-11-19 | 2023-08-29 | Entegris, Inc. | Electrostatic chuck with charge dissipation coating |
| JP7269759B2 (en) | 2019-03-12 | 2023-05-09 | 新光電気工業株式会社 | Substrate fixing device |
| JP2021141277A (en) * | 2020-03-09 | 2021-09-16 | 東京エレクトロン株式会社 | Mounting table and plasma processing device |
| WO2021241645A1 (en) * | 2020-05-28 | 2021-12-02 | 京セラ株式会社 | Air-permeable plug, substrate support assembly, and shower plate |
-
2022
- 2022-10-07 JP JP2023503422A patent/JP7483121B2/en active Active
- 2022-10-07 WO PCT/JP2022/037638 patent/WO2023153021A1/en active Application Filing
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