JPWO2019163647A1 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 238
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 238000000034 method Methods 0.000 claims abstract description 47
- 238000005530 etching Methods 0.000 claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 230000014509 gene expression Effects 0.000 claims description 7
- 239000013078 crystal Substances 0.000 abstract description 67
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 24
- 239000007789 gas Substances 0.000 description 20
- 238000000059 patterning Methods 0.000 description 20
- 239000010408 film Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000000243 solution Substances 0.000 description 11
- 238000011282 treatment Methods 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 238000000137 annealing Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 244000126211 Hericium coralloides Species 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
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- 238000000926 separation method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
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- 230000001678 irradiating effect Effects 0.000 description 1
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- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
Description
本発明の一実施形態について図面を参照しながら説明する。
以下、本実施形態に係る太陽電池10の製造方法について図3〜図10を参照しながら説明する。
第1導電型半導体層13pのエッチング速度 ≦ リフトオフ層LFのエッチング速度 …(2A)
<リフトオフ工程>
第1導電型半導体層13pのエッチング速度 << リフトオフ層LFのエッチング速度…(2B)
すなわち、エッチング溶液を用いるパターニング工程及びリフトオフ工程では、第1導電型半導体層13pのエッチング速度 ≦ リフトオフ層LFのエッチング速度…(2)になっていればよい。
具体的には、結晶基板11を構成するシリコンの線膨張係数が3.4ppm/K以上3.5ppm/K以下であるので、それより線膨張係数が小さい値を示すことが好ましい。このため、リフトオフ層LFは、酸化ケイ素(線膨張係数:0.5ppm/K以上1.0ppm/K以下)又は窒化ケイ素(3.1ppm/K)を主成分とすると好ましい。特に好ましいのは、線膨張係数の観点から酸化ケイ素である。なお、酸窒化ケイ素のような複合化合物として線膨張係数を制御しても構わない。リフトオフ層LFの組成の点では、主成分である酸化ケイ素をSiOxと表現した場合に、組成xの値は0.5以上2.2以下の範囲が好ましく、さらには1.2以上2.0以下、特には1.4以上1.9以下が好ましいが、いずれの場合にも上記の大小関係(関係式(1))を満たしていることが重要である。ここで、組成xの値が一般的なストイキオメトリックな値(x=2.0)よりも大きい値が上限となっているが、これは、リフトオフ層LFの薄膜形成プロセスにおいて、過剰に酸素が含まれる場合があるためである。窒化ケイ素についてもSiNyと表現した場合に、組成yの値は0.8以上1.4以下の範囲が好ましく、さらには0.9以上1.3以下が好ましい。
まず、結晶基板として、厚さが200μmの単結晶シリコン基板を採用した。単結晶シリコン基板の両主面に異方性エッチングを行った。これにより、結晶基板にピラミッド型のテクスチャ構造が形成された。
次に、結晶基板をCVD装置に導入し、導入した結晶基板の両主面に、シリコン製の真性半導体層(厚さ8nm)を形成した。成膜条件は、基板温度が150℃、圧力が120Pa、SiH4/H2の流量比が3/10、及びパワー密度が0.011W/cm2であった。
次に、両主面に真性半導体層を形成した結晶基板をCVD装置に導入し、結晶基板における裏側主面の真性半導体層の上に、p型水素化非晶質シリコン系薄膜(膜厚10nm)を形成した。
次に、実施例1に用いる第1リフトオフ層として、プラズマCVD装置を用いて、酸化ケイ素(SiOx)を200nmの膜厚(マスクで遮蔽されない領域上)で形成した。基板温度を150℃、圧力を0.9kPa、SiH4/CO2/H2の流量比を1/10/750、及びパワー密度を0.15W/cm2とした。
次に、p型半導体層が形成された結晶基板の裏側主面又は両主面の上に、感光性レジスト膜を成膜した。成膜した感光性レジスト膜に対して、フォトリソグラフィ法により露光及び現像を行って、p型半導体層のエッチング領域を露出した。ここでは、まず、エッチング領域が露出した結晶基板を、濃度が1重量%の加水フッ化水素酸に浸漬して、エッチング領域のリフトオフ層を除去した。続いて、純水によるリンスを行った後に、濃度が5.5重量%のフッ化水素酸に20ppmのオゾンを混合したオゾン/フッ酸液に浸漬して、エッチング領域のp型半導体層及び真性半導体層を除去した。以下、この工程をp型半導体層パターニング工程と略称する。
続いて、p型半導体層パターニング工程の後に、裏側主面の露出部分を濃度が2重量%のフッ化水素酸によって洗浄した結晶基板をCVD装置に導入し、裏側主面に真性半導体層、n型水素化非晶質シリコン系薄膜(膜厚10nm)を形成した。
次に、n型半導体層が形成された結晶基板を大気雰囲気下で温度が180℃のオーブンで20分間のアニール処理を行った。ここでのアニール対象は、主にリフトオフ層である。このアニール処理により、リフトオフ層に必要なクラックが生じる。
次に、n型半導体層が形成され、アニール処理された結晶基板を、濃度が5重量%フッ化水素酸に浸漬した。これにより、リフトオフ層、そのリフトオフ層を覆うn型半導体層、及びリフトオフ層とn型半導体層との間にある真性半導体層が同時に除去された。
次に、マグネトロンスパッタリング装置を用いて、透明電極層の基となる酸化物膜(膜厚100nm)を、結晶基板の導電型半導体層の上に形成した。透明導電性酸化物としては、酸化スズを濃度10重量%で含有した酸化インジウム(ITO)をターゲットとして使用した。スパッタリング装置のチャンバ内に、アルゴン(Ar)と酸素(O2)との混合ガスを導入し、チャンバ内の圧力を0.6Paに設定した。アルゴンと酸素との混合比率は、抵抗率が最も低くなる(いわゆるボトム)条件とした。また、直流電源を用いて、0.4W/cm2の電力密度で成膜を行った。
リフトオフ層の膜厚及びエッチングの状態は、SEM(フィールドエミッション型走査型電子顕微鏡S4800:日立ハイテクノロジーズ社製)を用い、10万倍の倍率で観察して測定した。p型半導体層パターニング工程の後に、設計上のパターニング除去領域に従ってエッチングできている場合には「○」とし、リフトオフ層が過剰にエッチングされた場合には「×」とした。
ソーラシミュレータにより、AM(エアマス:air mass)1.5の基準太陽光を100mW/cm2の光量で照射して、太陽電池の変換効率(Eff(%))を測定した。実施例1の変換効率(太陽電池特性)を1.00とし、その相対値を[表1]に掲載した。
11 結晶基板(半導体基板)
12 真性半導体層
13 導電型半導体層
13p p型半導体層[第1導電型の第1半導体層/第2導電型の第2半導体層]
13n n型半導体層[第2導電型の第2半導体層/第1導電型の第1半導体層]
15 電極層
17 透明電極層
18 金属電極層
LF リフトオフ層
LFa クラック
Claims (4)
- 半導体基板における互いに対向する2つの主面の一方の主面の上に、第1導電型の第1半導体層を形成する工程と、
前記第1半導体層の上に、シリコン系薄膜材料を含むリフトオフ層を形成する工程と、
前記リフトオフ層及び第1半導体層を選択的に除去する工程と、
前記リフトオフ層及び第1半導体層を含む前記一方の主面の上に、第2導電型の第2半導体層を形成する工程と、
エッチング溶液を用いて、前記リフトオフ層を除去することにより、前記リフトオフ層を覆う前記第2半導体層を除去する工程とを含み、
前記半導体基板と前記リフトオフ層との互いの線膨張係数は、以下の関係式(1):
リフトオフ層の線膨張係数 < 半導体基板の線膨張係数 …(1)
を満たし、且つ、
前記第2半導体層を形成する工程及び前記第2半導体層を除去する工程の少なくとも一方の工程は、前記リフトオフ層を形成する工程よりも、プロセス温度が高い太陽電池の製造方法。 - 請求項1に記載の太陽電池の製造方法において、
前記リフトオフ層は、酸化ケイ素を主成分とし、且つ、
エッチング溶液を用いて、前記リフトオフ層及び第1半導体層を選択的に除去する工程、及び前記リフトオフ層を除去することにより、前記リフトオフ層を覆う前記第2半導体層を除去する工程では、前記第1半導体層のエッチング速度と前記リフトオフ層のエッチング速度とは、以下の関係式(2):
第1半導体層のエッチング速度 ≦ リフトオフ層のエッチング速度…(2)
を満たす太陽電池の製造方法。 - 請求項1又は2に記載の太陽電池の製造方法において、
前記半導体基板における少なくとも第1半導体層及び第2半導体層が形成される面は、テクスチャ構造を有している太陽電池の製造方法。 - 請求項1〜3のいずれか1項に記載の太陽電池の製造方法において、
前記第1半導体層を形成する工程は、前記第1半導体層を形成するよりも前に、前記半導体基板の前記一方の主面の上に第1真性半導体層を形成する工程を含み、
前記第1半導体層を選択的に除去する工程は、前記第1半導体層に続いて前記第1真性半導体層を選択的に除去する工程を含み、
前記第2半導体層を形成する工程は、前記第2半導体層を形成するよりも前に、前記半導体基板の前記リフトオフ層及び第1半導体層を含む前記一方の主面の上に第2真性半導体層を形成する工程を含み、
前記第2半導体層を除去する工程は、前記第2半導体層に続いて前記第2真性半導体層を選択的に除去する工程を含む太陽電池の製造方法。
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6265233B1 (en) * | 1999-02-22 | 2001-07-24 | Mosel Vitelic, Inc. | Method for determining crack limit of film deposited on semiconductor wafer |
JP2002134510A (ja) * | 2000-10-20 | 2002-05-10 | Fuji Electric Co Ltd | 配線または電極の形成方法 |
US20040129670A1 (en) * | 2002-12-30 | 2004-07-08 | Soon-Yong Kweon | Method for fabricating ferroelectric random access memory device |
JP2005123494A (ja) * | 2003-10-20 | 2005-05-12 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法および分析方法 |
US20080048278A1 (en) * | 2006-08-25 | 2008-02-28 | Fujifilm Corporation | Method of forming pattern of inorganic material film and structure containing the pattern |
JP2012177661A (ja) * | 2011-02-28 | 2012-09-13 | Denso Corp | 半導体装置の製造方法 |
WO2015060432A1 (ja) * | 2013-10-25 | 2015-04-30 | シャープ株式会社 | 光電変換装置 |
JP2015142132A (ja) * | 2014-01-29 | 2015-08-03 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
WO2017217219A1 (ja) * | 2016-06-15 | 2017-12-21 | 株式会社カネカ | 太陽電池及びその製造方法、並びに太陽電池モジュール |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100431177C (zh) * | 2003-09-24 | 2008-11-05 | 三洋电机株式会社 | 光生伏打元件及其制造方法 |
JP5230222B2 (ja) | 2008-02-21 | 2013-07-10 | 三洋電機株式会社 | 太陽電池 |
CN103329281B (zh) * | 2011-11-22 | 2014-10-08 | 株式会社钟化 | 太阳能电池及其制造方法以及太阳能电池模块 |
JP6491602B2 (ja) * | 2013-10-30 | 2019-03-27 | 株式会社カネカ | 太陽電池の製造方法、および太陽電池モジュールの製造方法 |
US9196758B2 (en) * | 2013-12-20 | 2015-11-24 | Sunpower Corporation | Solar cell emitter region fabrication with differentiated p-type and n-type region architectures |
US10522704B2 (en) * | 2015-02-13 | 2019-12-31 | Kaneka Corporation | Solar cell, method for manufacturing same |
WO2019138613A1 (ja) * | 2018-01-09 | 2019-07-18 | 株式会社カネカ | 太陽電池の製造方法 |
WO2019163646A1 (ja) * | 2018-02-23 | 2019-08-29 | 株式会社カネカ | 太陽電池の製造方法 |
WO2019163648A1 (ja) * | 2018-02-23 | 2019-08-29 | 株式会社カネカ | 太陽電池の製造方法 |
JP7228561B2 (ja) * | 2018-02-23 | 2023-02-24 | 株式会社カネカ | 太陽電池の製造方法 |
-
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-
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Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6265233B1 (en) * | 1999-02-22 | 2001-07-24 | Mosel Vitelic, Inc. | Method for determining crack limit of film deposited on semiconductor wafer |
JP2002134510A (ja) * | 2000-10-20 | 2002-05-10 | Fuji Electric Co Ltd | 配線または電極の形成方法 |
US20040129670A1 (en) * | 2002-12-30 | 2004-07-08 | Soon-Yong Kweon | Method for fabricating ferroelectric random access memory device |
JP2005123494A (ja) * | 2003-10-20 | 2005-05-12 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法および分析方法 |
US20080048278A1 (en) * | 2006-08-25 | 2008-02-28 | Fujifilm Corporation | Method of forming pattern of inorganic material film and structure containing the pattern |
JP2012177661A (ja) * | 2011-02-28 | 2012-09-13 | Denso Corp | 半導体装置の製造方法 |
WO2015060432A1 (ja) * | 2013-10-25 | 2015-04-30 | シャープ株式会社 | 光電変換装置 |
JP2015142132A (ja) * | 2014-01-29 | 2015-08-03 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
WO2017217219A1 (ja) * | 2016-06-15 | 2017-12-21 | 株式会社カネカ | 太陽電池及びその製造方法、並びに太陽電池モジュール |
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