JPWO2006090550A1 - Method for measuring dielectric constant of transmission line material and method for measuring electrical characteristics of electronic component using this dielectric constant measuring method - Google Patents
Method for measuring dielectric constant of transmission line material and method for measuring electrical characteristics of electronic component using this dielectric constant measuring method Download PDFInfo
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Abstract
【課題】高周波での誘電体材料の誘電率を実際に使用される伝送路の形態で測定でき、かつ周波数特性を含めた誘電率,tanδを高精度に求めることができる材料の誘電率測定方法を提供する。【解決手段】誘電体基板2に信号導体3と接地導体4とからなる伝送路を形成した単位長さ当たりの電気特性が未知の測定治具1を準備し、伝送路の長さ方向の少なくとも4箇所において、信号導体3と接地導体4とを短絡させて反射係数S11を測定する。短絡状態での測定値から伝送路の特性(伝達度α及び位相定数β)を計算で求め、さらに伝送路の特性と伝送路の物理寸法とから伝送路材料の誘電率およびtanδを計算で求める。【選択図】 図1A dielectric constant measurement method for a material capable of measuring the dielectric constant of a dielectric material at a high frequency in the form of a transmission line actually used, and capable of obtaining the dielectric constant and tan δ including frequency characteristics with high accuracy. I will provide a. A measuring jig having an unknown electrical characteristic per unit length, in which a transmission path composed of a signal conductor and a ground conductor is formed on a dielectric substrate, is prepared, and at least in the length direction of the transmission path. At four positions, the signal conductor 3 and the ground conductor 4 are short-circuited, and the reflection coefficient S11 is measured. Calculate the characteristics of the transmission line (transmittance α and phase constant β) from the measured values in the short-circuit state, and further calculate the dielectric constant and tan δ of the transmission line material from the characteristics of the transmission line and the physical dimensions of the transmission line. . [Selection] Figure 1
Description
本発明は伝送路基板などに用いられる誘電体材料の誘電率やtanδ(誘電正接)などの測定方法、および電子部品のインピーダンス値やQ値等の電気特性を測定する方法に関するものである。 The present invention relates to a method for measuring a dielectric constant and tan δ (dielectric loss tangent) of a dielectric material used for a transmission line substrate and the like, and a method for measuring electrical characteristics such as an impedance value and a Q value of an electronic component.
従来、伝送路基板などに用いられる誘電体材料の誘電率やtanδなどの測定方法として、非特許文献1,2に示されるように、低周波ではLCRメータを用いた容量法が、高周波では、ネットワークアナライザを用いた導波管法、共振法、自由空間法などが知られている。 Conventionally, as a method for measuring the dielectric constant and tan δ of a dielectric material used for a transmission line substrate or the like, as shown in Non-Patent Documents 1 and 2, a capacitance method using an LCR meter is used at low frequencies, A waveguide method using a network analyzer, a resonance method, a free space method, and the like are known.
容量法では、30MHz以下の低周波の誘電率しか測定できず、1GHzを越えるような高周波の誘電率を測定できない問題がある。
導波管法は、導波管や同軸管内に誘電体を挿入して反射特性や透過特性を測定し、誘電率を測定する方法であるが、試料を導波管の寸法に合わせて加工する必要があり、間隙が大きな誤差要因となるため、高い加工精度が要求されるといった問題がある。
共振法では、共振周波数に対応する複素誘電率を測定するため、限定された周波数の測定しか可能ではなく、材料の誘電率の周波数特性を考慮できていない。
自由空間法は、不要な電波の影響を受けないよう、送受信アンテナ、電波吸収体などの大掛かりな設備が必要であり、簡便な測定法とはいえない。
また、前記従来法はいずれも、実際の誘電体の用途として、最も重要な平面状に加工された状態の材料特性を測定するものではなく、加工時の影響を考慮に入れられない。
さらに、平面状に加工された誘電体基板を購入したユーザーは、その基板材料の特性を容易に知ることが不可能である。
さらに、誘電体基板の材料メーカーが提供する誘電体材料の比誘電率のカタログ値は、一般には1MHz程度の値であることが多く、有効数字も2桁しかない。また、周波数特性(1GHz〜20GHz)も詳細には記載されない。The capacitance method has a problem that only a low frequency dielectric constant of 30 MHz or less can be measured, and a high frequency dielectric constant exceeding 1 GHz cannot be measured.
The waveguide method is a method in which a dielectric is inserted into a waveguide or a coaxial tube to measure the reflection characteristics and transmission characteristics, and the dielectric constant is measured. The sample is processed according to the dimensions of the waveguide. There is a problem that high machining accuracy is required because the gap is a large error factor.
In the resonance method, since the complex dielectric constant corresponding to the resonance frequency is measured, only a limited frequency measurement is possible, and the frequency characteristics of the dielectric constant of the material cannot be considered.
The free space method is not a simple measurement method because it requires large-scale equipment such as a transmission / reception antenna and a radio wave absorber so as not to be affected by unnecessary radio waves.
In addition, none of the conventional methods measure the material characteristics in the state of being processed into the most important plane as an actual application of the dielectric, and cannot take into account the influence during processing.
Furthermore, a user who has purchased a dielectric substrate processed into a planar shape cannot easily know the characteristics of the substrate material.
Furthermore, the catalog value of the dielectric constant of the dielectric material provided by the material manufacturer of the dielectric substrate is generally a value of about 1 MHz, and there are only two significant figures. Further, frequency characteristics (1 GHz to 20 GHz) are not described in detail.
従来の誘電率測定法から得られた誘電率データの問題点をまとめると、以下のようになる。
(1)従来の誘電率測定方法では、各測定方法に合わせて、誘電体材料を加工しなければならず、実際に使用されるような伝送線路の形態で測定できていない。
(2)従来の誘電率測定方法では、材料の比誘電率を求めており、実際の使用状態における誘電率とは異なる。
(3)比誘電率の有効数字は2桁程度しかなく、寸法精度と比較すると精度は著しく低いため、特性インピーダンスを正確に求めることができない。
(4)共振法では、誘電率の周波数特性が測定できない。
(5)購入した材料ロット、または平面状等に加工済みの材料の誘電率を把握することができない。The problems of dielectric constant data obtained from the conventional dielectric constant measurement method are summarized as follows.
(1) In the conventional dielectric constant measurement method, a dielectric material must be processed in accordance with each measurement method, and cannot be measured in the form of a transmission line that is actually used.
(2) In the conventional dielectric constant measurement method, the relative dielectric constant of the material is obtained, which is different from the dielectric constant in the actual use state.
(3) The effective number of relative permittivity is only about two digits, and the accuracy is remarkably low as compared with the dimensional accuracy, so the characteristic impedance cannot be obtained accurately.
(4) The frequency characteristic of dielectric constant cannot be measured by the resonance method.
(5) The dielectric constant of a purchased material lot or a material processed into a flat shape cannot be grasped.
前記のように、使用する誘電体材料のロットの周波数特性を含めた誘電率,tanδを正確に把握することができなかったため、以下の問題が生じていた。
(1)ネットワークアナライザによる電子部品の高周波インピーダンス測定において、測定系の誤差要因を除去するTRL校正法をはじめとする校正法では、電子部品のインピーダンスを求めるために、測定系の誤差要因を校正して得られた散乱係数(Sパラメータ)から算出したZパラメータに測定に使用した伝送路の特性インピーダンスを乗じる必要があるが、誘電率の精度が悪いため、特性インピーダンスの精度が悪く、電子部品のインピーダンス特性の精度も得られないといった問題があった。
(2)高周波回路設計では、実際の誘電率が精度よくわかっていないため、設計精度が悪いといった問題があった。高周波回路設計において、誘電率は信号の遅延時間に影響するパラメータであり、精度良い設計のためには、高周波化の進展とともに益々重要になっているパラメータである。また、tanδについても、近年携帯型バッテリ駆動機器が開発される中、重要なパラメータになっている。
(1) In high-frequency impedance measurement of electronic components using a network analyzer, calibration methods such as the TRL calibration method that eliminates error factors in the measurement system calibrate the error factors in the measurement system in order to obtain the impedance of the electronic component. It is necessary to multiply the Z parameter calculated from the scattering coefficient (S parameter) obtained in this way by the characteristic impedance of the transmission line used for the measurement. However, since the accuracy of the dielectric constant is poor, the accuracy of the characteristic impedance is poor. There was a problem that the accuracy of impedance characteristics could not be obtained.
(2) The high frequency circuit design has a problem that the design accuracy is poor because the actual dielectric constant is not accurately known. In high-frequency circuit design, the dielectric constant is a parameter that affects the signal delay time, and is an increasingly important parameter for high-precision design as the frequency increases. Tan δ is also an important parameter during the recent development of portable battery-powered devices.
そこで、本発明の好ましい実施形態の目的は、高周波での誘電体材料の誘電率を実際に使用される伝送路の形態で測定でき、かつ周波数特性を含めた誘電率,tanδを高精度に求めることができる材料の誘電率測定方法を提供することにある。
また、この誘電率測定方法を用いた精度のよい電子部品の電気特性測定方法を提供することにある。Accordingly, an object of a preferred embodiment of the present invention is to measure the dielectric constant of a dielectric material at a high frequency in the form of a transmission line that is actually used, and to obtain the dielectric constant including the frequency characteristics, tan δ with high accuracy. An object of the present invention is to provide a method for measuring a dielectric constant of a material.
Another object of the present invention is to provide a method for accurately measuring electrical characteristics of electronic parts using this dielectric constant measurement method.
前記目的を達成するため、本発明の好ましい実施形態では、誘電体基板上に、信号導体と接地導体とからなり、単位長さ当たりの電気特性が未知の伝送路を持つ測定治具を準備するステップと、前記伝送路の長さ方向の少なくとも4箇所において、信号導体と接地導体とを短絡させて電気特性を測定するステップと、前記短絡状態での測定値から、前記伝送路の特性を算出するステップと、前記伝送路の特性から、前記伝送路材料の誘電率およびtanδの少なくとも1つを算出するステップと、を有する伝送路材料の誘電率測定方法を提供する。 In order to achieve the above object, in a preferred embodiment of the present invention, a measurement jig having a transmission line having an electric characteristic per unit length is prepared on a dielectric substrate, which includes a signal conductor and a ground conductor. Calculating the characteristics of the transmission line from the measured value in the short circuit state, the step of measuring the electrical characteristics by short-circuiting the signal conductor and the ground conductor at at least four locations in the length direction of the transmission line And a step of calculating at least one of the dielectric constant and tan δ of the transmission line material from the characteristics of the transmission line.
本発明の好ましい実施形態は、伝送路の反射特性から誘電率およびtanδの少なくとも1つを求めるものであるから、反射特性(散乱係数)が精度よく測定されなければならない。しかし、単にネットワークアナライザで反射特性を測定しただけでは、測定したい誘電体材料からなる伝送路の反射特性を良好に測定できない。なぜなら、測定結果にはコネクタ部と伝送路の接合部が不整合部となり、この部分で生じる多重反射が含まれてしまうからである。
この不整合部を除去する方法として、タイムドメイン法があるが、タイムドメイン法を用いる場合、分解能を高めるためには周波数範囲を広くとる必要があり、材料の周波数特性をみることはできなかった。
本発明の好ましい実施形態では、同一の伝送路上の4箇所で信号導体と接地導体を短絡した状態(例えば短絡基準を接続した状態)とし、1ポートのSパラメータの測定を行うので、4つの測定値はいずれもコネクタ部と平面伝送路の不整合部は同一となることから、誤差補正においてコネクタ部と平面伝送路の不整合部の影響が正確に取り除かれる。
このため、測定したい誘電体材料の伝送路の反射特性を正確に測定できる。この反射特性を用いて、伝送路の特性を求め、誘電率やtanδを算出しているので、より正確な誘電率やtanδが測定できる。In the preferred embodiment of the present invention, since at least one of the dielectric constant and tan δ is obtained from the reflection characteristic of the transmission line, the reflection characteristic (scattering coefficient) must be accurately measured. However, simply measuring the reflection characteristics with a network analyzer cannot satisfactorily measure the reflection characteristics of a transmission line made of a dielectric material to be measured. This is because the measurement result includes a joint portion between the connector portion and the transmission path as an inconsistent portion, and includes multiple reflections occurring at this portion.
There is a time domain method as a method for removing the mismatched portion, but when using the time domain method, it is necessary to widen the frequency range in order to increase the resolution, and the frequency characteristics of the material could not be observed. .
In the preferred embodiment of the present invention, the signal conductor and the ground conductor are short-circuited at four locations on the same transmission line (for example, a state in which a short-circuit reference is connected), and the S-parameter of one port is measured. Since the values are the same in the mismatching part of the connector part and the planar transmission path, the influence of the mismatching part of the connector part and the planar transmission path is accurately removed in error correction.
For this reason, it is possible to accurately measure the reflection characteristic of the transmission path of the dielectric material to be measured. By using this reflection characteristic, the characteristics of the transmission line are obtained and the dielectric constant and tan δ are calculated. Therefore, the dielectric constant and tan δ can be measured more accurately.
伝送路としては、上面から導体を押しつけることで伝送路中の任意の位置で信号導体と接地導体を短絡できる平面伝送路を用いるのがよい。
平面伝送路は上方から導体(短絡基準)を押し付けることにより、容易に良好な短絡状態を得ることができるからである。信号導体と接地導体とを短絡させると、ほぼ全反射となるので、信号導体の終端側の影響を受けず、散乱係数を精度よく測定できる。
このような平面伝送路としては、コプレーナウェーブガイドやスロット線路などがある。As the transmission line, it is preferable to use a planar transmission line that can short-circuit the signal conductor and the ground conductor at an arbitrary position in the transmission line by pressing the conductor from the upper surface.
This is because the flat transmission line can easily obtain a good short circuit state by pressing a conductor (short circuit reference) from above. When the signal conductor and the ground conductor are short-circuited, almost total reflection occurs, so that the scattering coefficient can be accurately measured without being influenced by the terminal end of the signal conductor.
Such planar transmission lines include coplanar waveguides and slot lines.
測定する周波数範囲それぞれについて、前記伝送路上の少なくとも4ヵ所で、信号導体と接地導体を短絡した状態の1ポートの散乱係数を測定し、各散乱係数を用いて伝送路特性ξ(ξ=α-2exp(j2β) 、α:伝達度、β:位相定数)を算出するのがよい。
伝送路の少なくとも4箇所で信号導体と接地導体とを短絡させ、その散乱係数から伝送路特性を求める。伝送路特性としては、伝達度αおよび位相定数βがあるが、ξ=α-2exp(j2β) とおくと、散乱係数からξが複素数として求められるので、その実数部から伝達度αが、虚数部から位相定数βがそれぞれ求まる。位相定数βが求まれば、その伝送路の実効誘電率εeff を計算で求めることができ、伝達度αと位相定数βとを用いてtanδを求めることができる。For each frequency range to be measured, the scattering coefficient of one port in a state where the signal conductor and the ground conductor are short-circuited is measured at least at four locations on the transmission path, and the transmission path characteristics ξ (ξ = α − 2 exp (j2β), α: transmission, β: phase constant) should be calculated.
The signal conductor and the ground conductor are short-circuited at at least four locations on the transmission line, and the transmission line characteristic is obtained from the scattering coefficient. As the transmission line characteristics, there are a transmission factor α and a phase constant β. However, when ξ = α −2 exp (j2β), ξ is obtained as a complex number from the scattering coefficient. A phase constant β is obtained from the imaginary part. If the phase constant β is obtained, the effective dielectric constant ε eff of the transmission line can be obtained by calculation, and tan δ can be obtained using the transmissivity α and the phase constant β.
前記伝送路特性ξと伝送路の物理寸法とから、前記伝送路材料の比誘電率εr を算出することができる。
実効誘電率εeff はその伝送路の物理寸法に応じた値を持つため、伝送路の形状が変化すれば、同じ誘電体材料を使用していても、誘電率εeff は使用できない。比誘電率εr は実効誘電率εeff と物理寸法とから計算で求めることができる。したがって、寸法や形状の影響を受けない誘電体材料そのものの比誘電率εr を求めることができる。From the transmission line characteristic ξ and the physical dimension of the transmission line, the relative dielectric constant ε r of the transmission line material can be calculated.
Since the effective dielectric constant ε eff has a value corresponding to the physical dimension of the transmission line, the dielectric constant ε eff cannot be used even if the same dielectric material is used if the shape of the transmission line changes. The relative dielectric constant ε r can be calculated from the effective dielectric constant ε eff and physical dimensions. Therefore, it is possible to obtain the relative dielectric constant ε r of the dielectric material itself that is not affected by the size and shape.
信号導体と接地導体とを短絡させる位置は任意であるが、測定点1からポート1側にL1 ,L2 ,L3 とした場合、距離の比がL1:L2:L3 =1:2:3または1:2:4であるとき、伝送路特性ξの計算式は簡単になるので望ましい。
これ以外の場合は、複雑な式になるので、反復計算を用いるとよい。The position at which the signal conductor and the ground conductor are short-circuited is arbitrary, but when L 1 , L 2 , and L 3 from the measurement point 1 to the port 1 side, the distance ratio is L 1 : L 2 : L 3 = 1. : 2: 3 or 1: 2: 4 is preferable because the calculation formula of the transmission line characteristic ξ becomes simple.
In other cases, it becomes a complicated expression, so it is better to use iterative calculation.
信号導体と接地導体とを短絡させる位置、つまり短絡基準接続位置のそれぞれの間の位相差を約70°〜145°となるように設定するのがよい。この場合には、校正精度が高く、かつ測定データをうまく使いまわせば、広帯域測定であっても短絡基準測定回数は多くならない。 The position where the signal conductor and the ground conductor are short-circuited, that is, the phase difference between each of the short-circuit reference connection positions is preferably set to be about 70 ° to 145 °. In this case, if the calibration accuracy is high and the measurement data is used well, the number of short-circuit reference measurements does not increase even in the wideband measurement.
上述の本発明の誘電率測定方法における短絡状態での測定値から、伝送路特性ξと共に伝送路の誤差係数Exxを算出し、伝送路に被測定電子部品を接続した状態で、その散乱係数(Sパラメータ)を測定し、測定された被測定電子部品の散乱係数から伝送路の誤差係数Exxを除去して被測定電子部品の散乱係数の真値SxxAを求め、その値から被測定電子部品のZパラメータZxxAを求めることができる。
つまり、短絡状態での校正測定を4箇所以上で実施すれば、伝送路特性ξの他に伝送路の誤差係数Exxを同時に算出することができる。伝送路に被検体(被測定電子部品)を接続した状態での測定値から伝送路の誤差係数Exxを取り除けば、被検体の電気特性(Sパラメータ)の真値を容易に求めることができる。
この方法は、伝送路特性ξと誤差係数Exxとが同じ条件下で求められるので、その結果得られる被測定電子部品の散乱係数の真値SxxA およびZパラメータZxxAの精度も非常に高い。From the measured value in the short-circuit state in the above-described dielectric constant measurement method of the present invention, the transmission channel characteristic ξ and the transmission channel error coefficient E xx are calculated, and in the state where the measured electronic component is connected to the transmission channel, the scattering coefficient is calculated. (S parameter) is measured, the error coefficient E xx of the transmission path is removed from the measured scattering coefficient of the electronic component to be measured, and the true value S xxA of the scattering coefficient of the electronic component to be measured is obtained. The Z parameter Z xxA of the electronic component can be obtained.
In other words, if calibration measurement in a short-circuit state is performed at four or more locations, the transmission channel error coefficient E xx can be calculated simultaneously in addition to the transmission channel characteristics ξ. If the error coefficient E xx of the transmission line is removed from the measurement value in a state where the subject (the electronic component to be measured) is connected to the transmission path, the true value of the electrical characteristic (S parameter) of the subject can be easily obtained. .
In this method, since the transmission line characteristic ξ and the error coefficient E xx are obtained under the same conditions, the accuracy of the true value S xxA and the Z parameter Z xxA of the scattering coefficient of the electronic component to be measured obtained as a result is very high. .
前記方法は、伝送路特性ξと誤差係数Exxを同時に求め、電子部品のインピーダンス特性を算出する方法であるが、場合によっては、基板の伝送路特性ξのみを本発明方法で求める一方、前記基板と同一ロットの伝送路の誤差係数Exxは既存の校正方法(例えばTRL法)を用いて別に求め、電子部品のインピーダンス特性を算出してもよい。
この方法では、伝送路特性を求める場合に使用できる伝送線路は、CPW、スロットラインに限られるが、校正時に使用できる伝送線路は、校正の種類に応じて、マイクロストリップライン、CPW、スロットラインなど、適宜選択することができる。
ただし、この場合、校正基板の伝送路特性は校正と同時に求めておらず、校正基板そのものの伝送路特性を求めているわけではないので、前記方法と比較すると、電子部品のインピーダンス特性の精度は若干劣る。The method is a method of calculating the impedance characteristic of the electronic component by simultaneously obtaining the transmission line characteristic ξ and the error coefficient E xx , but in some cases, only the transmission line characteristic ξ of the board is obtained by the method of the present invention. error coefficient E xx of the transmission path of the substrate and the same lot determined separately using existing calibration methods (e.g. TRL method), may be calculated impedance characteristic of the electronic component.
In this method, the transmission lines that can be used when obtaining the transmission line characteristics are limited to CPW and slot lines. However, the transmission lines that can be used during calibration are microstrip lines, CPWs, slot lines, etc., depending on the type of calibration. Can be appropriately selected.
However, in this case, the transmission path characteristics of the calibration board are not obtained at the same time as calibration, and the transmission path characteristics of the calibration board itself are not obtained. Somewhat inferior.
前記のように伝送路特性ξと伝送路の物理寸法とから、伝送路材料の比誘電率εr を算出することができる。そのため、たとえ伝送路の形状が変更されても、この比誘電率εr と伝送路の物理寸法とから実効誘電率εeff を求め、このεeff から伝送路の特性インピーダンスZ0を求めることができる。そのため、基板を構成する誘電体が同一であれば、誘電率を求めた測定治具と、測定・校正を行う測定治具とが別の治具であっても、測定・校正用の測定治具の特性インピーダンスZ0を簡単に求めることができる。As described above, the relative dielectric constant ε r of the transmission line material can be calculated from the transmission line characteristic ξ and the physical dimension of the transmission line. Therefore, even if the shape of the transmission line is changed, the effective dielectric constant ε eff is obtained from the relative dielectric constant ε r and the physical dimension of the transmission line, and the characteristic impedance Z 0 of the transmission line is obtained from the ε eff. it can. Therefore, if the dielectrics composing the substrate are the same, even if the measurement jig for which the dielectric constant is obtained is different from the measurement jig for measurement / calibration, the measurement treatment for measurement / calibration is used. The characteristic impedance Z 0 of the tool can be easily obtained.
上述の誘電率測定方法で求めた前記伝送路材料の誘電率から、伝送路の特性インピーダンスZ0を算出し、この伝送路の特性インピーダンスZ0と上述の被測定電子部品のZパラメータZxxAとから、被測定電子部品のインピーダンスZDUT を算出することができる。
被測定電子部品の特性インピーダンスを精度よく求めるためには、伝送路の誘電率の正確な把握が必要である。本発明方法では、伝送路の正確な誘電率を得ることができるので、伝送路の特性インピーダンスZ0も正確に把握できる。そして、上述の散乱係数の真値から求めた被測定電子部品のZパラメータZxxA と、前記特性インピーダンスZ0とから、被測定電子部品のインピーダンスZDUT を正確に、かつ実際に使用される周波数に即して求めることができる。A dielectric constant of the transmission line material obtained by the above-described dielectric constant measuring method, to calculate the characteristic impedance Z 0 of the transmission line, the characteristic impedance Z 0 of the transmission line and Z parameter Z xxA of the measured electronic component described above Thus, the impedance Z DUT of the electronic component to be measured can be calculated.
In order to accurately obtain the characteristic impedance of the electronic component to be measured, it is necessary to accurately grasp the dielectric constant of the transmission line. In the method of the present invention, an accurate dielectric constant of the transmission line can be obtained, so that the characteristic impedance Z 0 of the transmission line can also be accurately grasped. Then, from the Z parameter Z xxA of the electronic component to be measured obtained from the true value of the scattering coefficient and the characteristic impedance Z 0 , the frequency Z DUT of the electronic component to be measured is accurately and actually used. You can ask for it.
以上のように、本発明の好ましい実施形態によれば、コネクタと伝送路の不整合部を完全に除去した反射特性を測定できるので、より正確な誘電率、tanδを算出できる。
また、誘電体材料を実際に使用されるような伝送路の形態で、誘電率、tanδが求まるため、実際の使用状態に即した誘電率が求まる。
さらに、測定周波数範囲ごとに基板の誘電率、tanδを精度よく求めることができる。
また、本発明方法により正確な誘電率やtanδが測定できるので、次の利点が得られる。すなわち、ネットワークアナライザによる電子部品の高周波インピーダンス測定において、測定系の誤差要因を除去するTRL校正法をはじめとする校正法では、電子部品のインピーダンスを求めるために、測定系の誤差要因を校正して得られたSパラメータに、治具伝送路の特性インピーダンスを乗じる必要があるが、基板の誘電率が直接精度よく求められるため、特性インピーダンスの精度が向上し、その結果、電子部品のインピーダンス特性をより正確に求めることができる。As described above, according to the preferred embodiment of the present invention, the reflection characteristic obtained by completely removing the mismatching portion between the connector and the transmission line can be measured, so that a more accurate dielectric constant and tan δ can be calculated.
In addition, since the dielectric constant and tan δ are obtained in the form of a transmission line in which a dielectric material is actually used, the dielectric constant in accordance with the actual use state can be obtained.
Furthermore, the dielectric constant and tan δ of the substrate can be obtained with high accuracy for each measurement frequency range.
In addition, since the accurate dielectric constant and tan δ can be measured by the method of the present invention, the following advantages can be obtained. That is, in the high-frequency impedance measurement of electronic components using a network analyzer, calibration methods such as the TRL calibration method that eliminates the error factors of the measurement system calibrate the error factors of the measurement system in order to obtain the impedance of the electronic components. Although it is necessary to multiply the obtained S parameter by the characteristic impedance of the jig transmission line, since the dielectric constant of the substrate is obtained directly and accurately, the accuracy of the characteristic impedance is improved. As a result, the impedance characteristic of the electronic component is improved. It can be obtained more accurately.
以下に、本発明の好ましい実施の形態を、実施例を参照して説明する。 Hereinafter, preferred embodiments of the present invention will be described with reference to examples.
以下に、本発明にかかる伝送路特性の算出方法の第1実施例を示す。ここでは、反射法を利用した1ポート測定方法について説明する。
−治具伝送路の準備−
測定治具1として、ここではコプレーナウエーブガイド(以下、CPWと記す)を例にして説明する。測定治具1は、図1に示すように、誘電体よりなる治具基板2の上面に信号導体3と接地導体4とからなる伝送路を形成したものである。なお、治具基板2の裏面に接地導体を形成してもよい。信号導体3の一端は開放端であり、他端はコネクタ5に接続されている。接地導体4は信号導体3の幅方向両側および開放端を隙間をあけて取り囲むように形成されている。コネクタ5には同軸ケーブル6が接続され、測定器の一例であるネットワークアナライザ7の測定ポート7a,7bに接続されている。同軸ケーブル6の信号線6aは、接続ばらつきを解消するため信号導体3に半田付けや溶接等によって固定されている。測定ポート7a,7bは同軸ケーブル6を介して信号導体3と接地導体4とにそれぞれ接続されている。A first embodiment of a method for calculating transmission line characteristics according to the present invention will be described below. Here, a one-port measurement method using the reflection method will be described.
-Preparation of jig transmission line-
Here, a coplanar wave guide (hereinafter referred to as CPW) will be described as an example of the measuring jig 1. As shown in FIG. 1, the measuring jig 1 is formed by forming a transmission path composed of a signal conductor 3 and a ground conductor 4 on the upper surface of a jig substrate 2 made of a dielectric. A ground conductor may be formed on the back surface of the jig substrate 2. One end of the signal conductor 3 is an open end, and the other end is connected to the connector 5. The ground conductor 4 is formed so as to surround both sides of the signal conductor 3 in the width direction and the open end with a gap. A coaxial cable 6 is connected to the connector 5 and is connected to measurement ports 7a and 7b of a network analyzer 7 which is an example of a measuring instrument. The signal line 6a of the coaxial cable 6 is fixed to the signal conductor 3 by soldering or welding in order to eliminate connection variation. The measurement ports 7a and 7b are connected to the signal conductor 3 and the ground conductor 4 through the coaxial cable 6, respectively.
−短絡基準の接続・測定−
本算出方法では、測定すべき校正基準は全て同じ短絡基準10であり、使用する測定治具1も同じ治具である。
短絡基準10とは、電気的に短絡状態の部品一般を指し、チップ部品、金属片、工具などでもよい。望ましくは、ナイフエッジのような伝送路の長さ方向の接触長さが短いものがよい。短絡基準が理想的であれば、反射係数が−1(全反射)の値になるが、実際には短絡基準といえどもある程度のインダクタンスを持つので、インダクタンス値が既知である必要があるということである。通常、マイクロ波帯では、オープン状態と比較して短絡状態は比較的容易に理想に近い状態を得られる。高い測定精度が要求される場合には、簡単なシミュレーション等によって短絡基準のインダクタンスを求めれば良い。-Connection and measurement of short circuit reference-
In this calculation method, the calibration standards to be measured are all the same short-circuit standard 10, and the measurement jig 1 to be used is also the same jig.
The short-circuit reference 10 refers to general components that are electrically short-circuited, and may be a chip component, a metal piece, a tool, or the like. Desirably, the contact length in the longitudinal direction of the transmission path such as a knife edge is short. If the short-circuit standard is ideal, the reflection coefficient will be -1 (total reflection). However, even though the short-circuit standard actually has some inductance, the inductance value needs to be known. It is. Usually, in the microwave band, the short-circuit state can be relatively easily obtained as compared with the open state. When high measurement accuracy is required, the short-circuited reference inductance may be obtained by simple simulation or the like.
まず、被検体の測定時に被検体を接続する箇所(図1中の測定点1:P1)で信号導体3と接地導体4とを短絡基準10により短絡し、この点を校正面とする。この時の測定結果をS11M1とし、測定点1における反射係数の真値をΓA1とする。ΓA1は短絡基準の真値であるが、これは短絡基準10の伝送路の長さ方向の大きさが測定信号波長と比較して十分に小さければ−1とすればよく、そうでなければその真値の予想値をシミュレーション等で求めておくべきものである。First, the signal conductor 3 and the ground conductor 4 are short-circuited by a short-circuit reference 10 at a location (measurement point 1: P1 in FIG. 1) where the subject is connected during measurement of the subject, and this point is used as a calibration surface. The measurement result at this time is S 11M1 and the true value of the reflection coefficient at the measurement point 1 is Γ A1 . Γ A1 is a true value of the short-circuit reference, and this may be set to −1 if the length of the short-circuit reference 10 in the length direction of the transmission line is sufficiently smaller than the measurement signal wavelength. The expected value of the true value should be obtained by simulation or the like.
次に、測定点1よりポート1側にL1 だけ離れた伝送路上の位置(測定点2:P2)で短絡基準10を信号導体3と接地導体4間に接続して測定を行い、この時の測定結果をS11M2とする。この際、測定点2における短絡基準10の反射係数の真値はΓA1であるが、測定点1を基準面にとると、反射係数の真値は数式1のように変換される。ポート1側より入射した電磁波は、短絡基準10で全反射するため、測定点1に短絡基準10を接続した場合と比較して往復分2L1 だけ伝送路を伝達する距離が短いからである。ここで、αは単位長さ当たりの伝送路の伝達度[U/mm]、βは伝送路の位相定数[rad/mm]であり、α,βは未知である。ΓA2は測定点1を基準面とした場合の測定点2に接続された短絡基準10の真値である。
続けて、測定点1よりポート1側にL2 だけ離れた伝送路上の位置(測定点3:P3)に短絡基準10を接続して測定を行い、この時の測定結果をS11M3とする。測定点2の場合と同様に測定点1を基準面に取ると、反射係数の真値は数式2のようになる。
さらに測定点1よりポート1側に距離L3 だけ離れた伝送路上の位置(測定点4:P4)に短絡基準10を接続して測定を行い、この時の測定結果をS11M4とする。測定点2の場合と同様に測定点1を基準面に取ると、測定点4における反射係数の真値ΓA4は数式3のようになる。
ここで、次式の通りα,βを含む式をξとおく。ξは、物理的には単位長さ当たりの伝送路の伝達係数を表している。
数式4を用いると、数式1〜数式3はそれぞれ数式5〜数式7のように書き直すことができる。
今回、伝送路特性ξと誤差係数E11、E12、E22との4つが未知数となり、測定点1〜4の測定値S11M1、S11M2、S11M3、S11M4の4つにより、未知数4つを求めることができる。
なお、未知数ξは複素数として求まるため、その実数部から伝達度α(損失δ[dB/mm]=20logα)が、虚数部から位相定数βがそれぞれ求まる。This time, the transmission path characteristic ξ and the error coefficients E 11 , E 12 , and E 22 become unknown numbers , and the measured value S 11M1 , S 11M2 , S 11M3 , and S 11M4 at the measurement points 1 to 4 give four unknowns. You can ask for one.
Since the unknown ξ is obtained as a complex number, the transmission factor α (loss δ [dB / mm] = 20 log α) is obtained from the real part, and the phase constant β is obtained from the imaginary part.
計算の都合により、短絡基準10を接続する測定点1からの測定点2〜4までの距離L1,L2,L3は、次のいずれかの関係を満たすことが望ましい。
L1:L2:L3=1:2:3
L1:L2:L3=1:2:4
前記関係を満たしていれば、以下に示す数式を用いて伝送路特性ξを陽に計算することができる。For convenience of calculation, it is desirable that the distances L 1 , L 2 , L 3 from the measurement point 1 connecting the short-circuit reference 10 to the measurement points 2 to 4 satisfy any one of the following relationships.
L 1 : L 2 : L 3 = 1: 2: 3
L 1 : L 2 : L 3 = 1: 2: 4
If the above relationship is satisfied, the transmission line characteristic ξ can be calculated explicitly using the following mathematical formula.
短絡基準を測定する位置L1,L2,L3が、L1:L2:L3=1:2:3の関係を満足している場合は、数式8によってξを求めることができる。
一方、L1:L2:L3=1:2:4の関係を満足している場合は、数式9によってξを求めることができる。
前記のように、L1:L2:L3=1:2:3または1:2:4の場合に計算が容易になるが、その他の場合でも、短絡基準接続位置間の位相差を約70°〜145°とするのがよい。
すなわち、本算出方法では1ポートの校正の中で伝送路特性を求めており、治具伝送路に短絡基準を接続する位置の違いによって生じる反射係数の変化を利用しているが、信号波長と短絡基準の位置の関係によっては校正精度が低下する場合があるので、短絡基準の位置の決定は慎重に行う必要がある。
短絡基準間の位相差を大きく確保すると校正の精度は向上するが、一組の短絡基準で対応できる周波数範囲が狭くなり、広帯域の測定をする場合に多くの短絡基準を測定する必要が生じる。短絡基準間の位相差を用いて校正を行うTRL校正の場合、NIST等の資料によると、良好な測定精度を得るために短絡基準間の位相差は20°〜30°以上程度確保するべきであるとされている。
短絡基準接続位置間の位相差を約70°〜145°とした場合には、校正精度が高い反面、1組の短絡基準で対応できる周波数範囲が前記の場合と比較してかなり狭くなるが、測定データをうまく使いまわせば、広帯域測定であっても短絡基準測定回数は多くならないからである。As described above, the calculation is facilitated when L 1 : L 2 : L 3 = 1: 2: 3 or 1: 2: 4, but in other cases, the phase difference between the short-circuit reference connection positions is reduced. It is good to set it as 70 degrees-145 degrees.
That is, in this calculation method, the transmission line characteristics are obtained during calibration of one port, and the change in the reflection coefficient caused by the difference in the position where the short-circuit reference is connected to the jig transmission line is used. Depending on the relationship of the position of the short-circuit reference, the calibration accuracy may be lowered, so the position of the short-circuit reference needs to be determined carefully.
If a large phase difference between the short-circuit references is ensured, the accuracy of calibration is improved, but the frequency range that can be handled by one set of short-circuit references is narrowed, and many short-circuit references need to be measured when performing a wide-band measurement. In the case of TRL calibration in which calibration is performed using the phase difference between the short-circuit references, according to materials such as NIST, the phase difference between the short-circuit references should be ensured to be about 20 ° to 30 ° or more in order to obtain good measurement accuracy. It is said that there is.
When the phase difference between the short-circuit reference connection positions is about 70 ° to 145 °, the calibration accuracy is high, but the frequency range that can be handled by one set of short-circuit reference is considerably narrower than the above case, This is because, if the measurement data is used well, the number of short-circuit reference measurements will not increase even with wideband measurements.
−誘電率εr、tanδの算出−
次に、前記のように求めた各周波数範囲の伝送路特性ξ、すなわち伝達度αおよび位相定数βの測定値から、基板の誘電率εrおよびtanδを求める。具体的には、伝達度αの測定値と計算値の残差が最小になるよう、ニュートン法などの既知の数値計算手法により収束計算を行ってtanδを求め、また位相定数βの測定値から求めた基板の誘電率εeffと計算値の残差が最小になるよう同様の収束計算を行い、基板の誘電率εrを求める。-Calculation of dielectric constant ε r , tan δ-
Next, the dielectric constant ε r and tan δ of the substrate are obtained from the transmission path characteristics ξ of each frequency range obtained as described above, that is, the measured values of the transmissivity α and the phase constant β. Specifically, tan δ is obtained by performing a convergence calculation by a known numerical calculation method such as Newton's method so that the residual between the measured value of the transmission α and the calculated value is minimized, and from the measured value of the phase constant β. The same convergence calculation is performed so that the residual of the calculated dielectric constant ε eff of the substrate and the calculated value is minimized, and the dielectric constant ε r of the substrate is obtained.
以下に、CPW伝送路を用いて基板の誘電率εr 、tanδを算出する具体的方法を説明する。
CPW伝送路の特性インピーダンスを求めるためのシミュレーションの式は、以下のようなものが知られている。
ここで、図2に示すように、W:信号導体の幅、s:信号導体と接地導体の間隔、h:誘電体の厚さ、t:導体の厚さ、L:導体の長さ、f:周波数、εr :比誘電率、c:光速、Z0:特性インピーダンス、εeff :実効誘電率、μ0:真空の透磁率、ε0:真空の誘電率とする。A specific method for calculating the dielectric constants ε r and tan δ of the substrate using the CPW transmission line will be described below.
The following equations are known as simulation equations for obtaining the characteristic impedance of the CPW transmission line.
Here, as shown in FIG. 2, W: the width of the signal conductor, s: the distance between the signal conductor and the ground conductor, h: the thickness of the dielectric, t: the thickness of the conductor, L: the length of the conductor, f : Frequency, ε r : relative permittivity, c: speed of light, Z 0 : characteristic impedance, ε eff : effective permittivity, μ 0 : vacuum permeability, ε 0 : vacuum permittivity.
Z0を計算する式は次の通りである。
ここで、Zcは次式で与えられる。Zcはεr =1の場合のCPWの特性インピーダンスであり、Kは第1種完全楕円積分である。
k,k'は次式で与えられる。
また、k1,k1'は次式で与えられる。
次に、εeff の近似式は次の通りである。
位相定数βは数式15のように実効誘電率εeffの関数として表されるので、実効誘電率εeffはこの式を用いて位相定数βの測定値から算出することができる。
また、伝達度αは、導体損失αeと誘電体損失αdと輻射損αrの和で表されるが、このうち、誘電体損失αdは次式のようにεeff とtanδとの関数で表される。
図3は、tanδを求めるための繰り返し計算(ニュートン法)によるアルゴリズムを示す。まずtanδの初期値を入力し(ステップS1)、このtanδから電磁界シミュレータを用いてαを計算する(ステップS2)。次に、αの測定値とステップS2で求めた計算値との差|Δα|を求め(ステップS3)、|Δα|が十分に小さいかどうかを判定する(ステップS4)。|Δα|が十分に小さくないと判定された場合には、tanδを修正し(ステップS5)、ステップS2以下の操作を繰り返す。ステップS4で|Δα|が十分に小さいと判定されれば、|Δα|≒0のときのtanδを基板特性とする(ステップS6)。 FIG. 3 shows an algorithm by iterative calculation (Newton method) for obtaining tan δ. First, an initial value of tan δ is input (step S1), and α is calculated from the tan δ using an electromagnetic field simulator (step S2). Next, a difference | Δα | between the measured value of α and the calculated value obtained in step S2 is obtained (step S3), and it is determined whether or not | Δα | is sufficiently small (step S4). If it is determined that | Δα | is not sufficiently small, tan δ is corrected (step S5), and the operations after step S2 are repeated. If it is determined in step S4 that | Δα | is sufficiently small, tan δ when | Δα | ≈0 is set as the substrate characteristic (step S6).
実効誘電率εeff から比誘電率εr を求める場合も、繰り返し計算(ニュートン法)によるアルゴリズムを用いる。図4はそのアルゴリズムの一例を示す。
まずεr の初期値を入力し(ステップS7)、このεrから電磁界シミュレータを用いてεeffを計算する(ステップS8)。次に、前記で求めた実効誘電率εeffとステップS8で求めた計算値との差|Δεeff|を求め(ステップS9)、|Δεeff|が十分に小さいかどうかを判定する(ステップS10)。|Δεeff|が十分に小さくないと判定された場合には、εr を修正し(ステップS11)、ステップS8以下の操作を繰り返す。ステップS10で|Δεeff|が十分に小さいと判定されれば、|Δεeff|≒0のときのεrを基板の比誘電率とする(ステップS12)。When obtaining the relative dielectric constant ε r from the effective dielectric constant ε eff, an algorithm based on iterative calculation (Newton method) is also used. FIG. 4 shows an example of the algorithm.
First, an initial value of ε r is input (step S7), and ε eff is calculated from the ε r using an electromagnetic field simulator (step S8). Next, a difference | Δε eff | between the effective dielectric constant ε eff obtained above and the calculated value obtained in step S8 is obtained (step S9), and it is determined whether | Δε eff | is sufficiently small (step S10). ). If it is determined that | Δε eff | is not sufficiently small, ε r is corrected (step S11), and the operations after step S8 are repeated. If it is determined in step S10 that | Δε eff | is sufficiently small, ε r when | Δε eff | ≈0 is set as the relative dielectric constant of the substrate (step S12).
また、簡易的には、求まった実効誘電率εeff から、数式14を用いて比誘電率εr を計算することができる。すなわち、実効誘電率εeff と伝送路の物理寸法とから、誘電体基板の材料そのものの比誘電率εr を算出することができる。Further, simply, the relative dielectric constant ε r can be calculated from the obtained effective dielectric constant ε eff using Equation 14. That is, the relative dielectric constant ε r of the material of the dielectric substrate itself can be calculated from the effective dielectric constant ε eff and the physical dimension of the transmission line.
−特性インピーダンスの算出−
前記で求めたεeff と、数式11および12により求めたZcとから、数式10により特性インピーダンスZ0を計算で求めることができる。-Calculation of characteristic impedance-
The characteristic impedance Z 0 can be calculated by Equation 10 from ε eff obtained above and Zc obtained by Equations 11 and 12.
前記のようにして伝送路の特性インピーダンスZ0が求まったので、この特性インピーダンスを用いて被検体のインピーダンスZDUT を求める方法について以下に説明する。
−校正の誤差モデルの誤差係数の計算−
数式8または数式9によってξが求まれば、数式5,数式6によってΓA2,ΓA3の値が計算できるので、伝送路の誤差係数を順次求めることが可能になる。
校正の誤差モデルを図5に示す。反射法とは、一方のポート(コネクタ5)から被検体11に入射した電磁波のどれだけの割合が反射するかを観測して、これからインピーダンス等を求める手法で、1ポートであるから、図5に示すように誤差要因もE11、E21、E12、E22の4個しかない。散乱係数測定は比測定であるので、E21=1とおけば、誤差要因はE11、E12、E22の3つである。図中のS11M は反射係数の測定値であり、S11A は被検体の散乱係数の真値である。Since the characteristic impedance Z 0 of the transmission line has been obtained as described above, a method for obtaining the impedance Z DUT of the subject using this characteristic impedance will be described below.
-Calculation of error coefficient of calibration error model-
If ξ is obtained by Equation 8 or Equation 9, the values of Γ A2 and Γ A3 can be calculated by Equation 5 and Equation 6, so that the error coefficient of the transmission path can be obtained sequentially.
A calibration error model is shown in FIG. The reflection method is a method of observing how much of the electromagnetic wave incident on the subject 11 is reflected from one port (connector 5) and obtaining an impedance or the like from this. As shown in FIG. 4, there are only four error factors E 11 , E 21 , E 12 , and E 22 . Since the scattering coefficient measurement is a ratio measurement, if E 21 = 1, there are three error factors E 11 , E 12 , and E 22 . In the figure, S 11M is a measured value of the reflection coefficient, and S 11A is a true value of the scattering coefficient of the subject.
さて、前述の短絡基準10の接続による測定結果から、各誤差係数E11、E12、E22は数式17で求められる。なお、D1 は中間変数である。
−被検体の測定と校正の実施−
誤差係数が求まれば、図6に示すように、被検体11を測定点1における信号導体3と接地導体4間に接続し、その電気特性すなわち反射係数S11M を測定する。この校正の誤差モデルは1ポート補正の誤差モデルと同じものであるから、実際の被検体測定結果から誤差の影響を除去するには1ポート補正と同様の計算を行えば良く、誤差の影響を除去して被検体の反射係数S11A の真値を求める数式を以下に記載しておく。なお、誤差要因の影響を除去する計算式は以下の数式に限らず、どのような公知技術を用いてもよい。
When the error coefficient is obtained, as shown in FIG. 6, the subject 11 is connected between the signal conductor 3 and the ground conductor 4 at the measurement point 1, and its electrical characteristic, that is, the reflection coefficient S 11M is measured. Since the calibration error model is the same as the one-port correction error model, the same calculation as in the one-port correction can be performed to remove the influence of the error from the actual measurement result of the object. Equations for obtaining the true value of the reflection coefficient S 11A of the object to be removed are described below. The calculation formula for removing the influence of the error factor is not limited to the following formula, and any known technique may be used.
−Sパラメータからインピーダンスへの変換−
前記校正法は反射法であるので、前記の校正法により誤差要因の校正を行って得られた反射係数の真値S11A を用いて、数式19により被検体のZパラメータZ11A を計算する。
Since the calibration method is a reflection method, the Z parameter Z 11A of the subject is calculated by Equation 19 using the true value S 11A of the reflection coefficient obtained by calibrating the error factor by the calibration method.
この実施例では、測定治具20として、図7に示すように、誘電体基板21の上面に2つの信号導体22a,22bが一直線上にかつ一端が間隔をあけて配置され、信号導体22a,22bの幅方向両側に間隔をあけて接地導体23が配置されたCPWを使用している。なお、治具基板21の裏面にも接地導体を設けてもよい。コネクタ24,25は同軸ケーブル26,27を介して測定器の一例であるネットワークアナライザ28の測定ポート28a〜28dに接続されている。同軸ケーブル26,27の信号線は信号導体22a,22bに半田付けや溶接等によって固定されている。 In this embodiment, as shown in FIG. 7, as the measurement jig 20, two signal conductors 22a and 22b are arranged on a straight line and one end is spaced from the upper surface of the dielectric substrate 21, and the signal conductors 22a and 22b are arranged. A CPW is used in which ground conductors 23 are arranged at intervals on both sides in the width direction of 22b. A ground conductor may also be provided on the back surface of the jig substrate 21. The connectors 24 and 25 are connected via coaxial cables 26 and 27 to measurement ports 28a to 28d of a network analyzer 28 which is an example of a measuring instrument. The signal lines of the coaxial cables 26 and 27 are fixed to the signal conductors 22a and 22b by soldering or welding.
実施例1と同様に、伝送路特性ξが未知であるから、短絡基準10を伝送路の4箇所で短絡させることで、伝送路特性ξと誤差係数とを同時に求めることができる。伝送路特性ξの算出方法は実施例1と同様である。 Since the transmission line characteristic ξ is unknown as in the first embodiment, the transmission line characteristic ξ and the error coefficient can be obtained at the same time by short-circuiting the short-circuit reference 10 at four locations on the transmission line. The calculation method of the transmission path characteristic ξ is the same as that in the first embodiment.
この実施例では、測定点1および測定点1よりポート1側に測定点2〜4の4箇所で短絡基準10を用いた校正測定を実施し、しかる後、ポート2側についても同様に4箇所での校正測定を実施する。
次に、図8に示すようにスルー(ポート間直結)状態での測定を行う。ポート間を接続するために適当なデバイス(以下、スルーチップという)13を信号導体22a,22b間にシリーズ接続する。測定値は、反射係数がS11MT、S22MTで、伝達係数はS21MT、S12MTとする。なお、スルーチップ23の電気特性は未知で良く、例えば抵抗値が分からないチップ抵抗などでも良いが、伝達係数に方向性があってはならない。伝達係数は、相反定理により方向性を持たないので、通常この条件は自動的に満足される。In this embodiment, calibration measurement using the short-circuit reference 10 is performed at four points of measurement points 2 to 4 from the measurement point 1 and the measurement point 1 to the port 1 side, and thereafter, similarly at the four points on the port 2 side. Perform calibration measurement at.
Next, as shown in FIG. 8, measurement is performed in a through (direct connection between ports) state. An appropriate device (hereinafter referred to as a through chip) 13 for connecting the ports is connected in series between the signal conductors 22a and 22b. Measurements, reflection coefficient S 11MT, in S 22MT, the transfer coefficient and S 21MT, S 12MT. Note that the electrical characteristics of the through chip 23 may be unknown, for example, a chip resistor whose resistance value is unknown, but the transfer coefficient should not be directional. Since the transfer coefficient does not have directionality according to the reciprocity theorem, this condition is usually satisfied automatically.
この実施例の校正の誤差モデルを図9に示す。これも従来から使用されているTRL補正の誤差モデルと同じものである。図中のS11M 、S21M は反射係数及び伝達係数の測定値であり、S11A 、S21A 等は被検体の散乱係数の真値である。また、誤差係数Exx、Fxxは8個あるが、散乱係数測定は比測定であるので、このうち7個の誤差要因を定められれば良い。具体的には、E21=1と置けば良い。FIG. 9 shows a calibration error model of this embodiment. This is also the same as the error model of TRL correction used conventionally. In the figure, S 11M and S 21M are measured values of the reflection coefficient and the transmission coefficient, and S 11A and S 21A and the like are true values of the scattering coefficient of the object. Further, although there are eight error coefficients E xx and F xx , the scattering coefficient measurement is a ratio measurement, and therefore, seven error factors may be determined. Specifically, E 21 = 1 may be set.
さて、前述の短絡基準10の接続による測定結果から、図9中の各誤差係数を求めなければならないが、まずE11、E12、E22、F11、(F21・F12) 、F22は次式で求められる。なお、FxxはExxと同様のため、Exxとのみ記載する。この段階では(F21・F12)については、2つの誤差係数F21、F12の積は求められるが、これらを別個独立に求めることはできない。なお、D1 は中間変数である。
次に、スルーチップの順方向および逆方向の伝達係数の測定結果S21MT、S12MTは、図9の誤差要因を用いて次式のように書ける。ただし、スルーチップの散乱係数の真値を仮にS11A,S21A,S12A,S22Aとしておく。
ここで、S21MT、S12MTの比を考える。数式22をもとに、スルーチップの正逆方向の伝達係数が等しい(S21A =S12A )ことに注意しつつ整理すると、次式が得られる。ここで注目すべきは、スルーチップの散乱係数S11A,S21A,S12A,S22Aは除算ですべて消滅してしまう点である。つまり、スルーチップの散乱係数真値が不明であっても、スルーチップに方向性がない場合はS21MT、S12MT(これは測定可能量である)の比さえ分かれば、誤差係数の関係が決まるという事である。
数式21と数式23をもとに、次式の通り全誤差係数を決定できる。
以上で、全ての誤差係数を決定する事ができた。以上はポート1側からポート2側へ信号を印加した場合(順方向)の議論であるが、逆方向についてはE21=1とする代わりにF21=1とすれば導出できる。With the above, all error coefficients have been determined. The above is a discussion when a signal is applied from the port 1 side to the port 2 side (forward direction), but the reverse direction can be derived by setting F 21 = 1 instead of E 21 = 1.
−被検体の測定と校正の実施−
誤差係数が求まれば、図10のように被検体11を伝送路に接続し、その特性を測定する。すなわち、被検体11を伝送路の被検体測定位置へ接触させて、電気特性(S11M,S21M,S12M,S22M )を測定する。この際、被検体11が2端子の場合には、図10の(a)のように信号導体22a,22b間にシリーズ接続すればよいが、3端子または4端子の場合には、図10の(b)のように信号導体22a,22bと接地導体23の間に接続すればよい。したがって、この実施例による測定方法は、2端子の電子部品の他、フィルタのような3端子以上の電子部品にも適用できる。−Measurement and calibration of specimen−
When the error coefficient is obtained, the subject 11 is connected to the transmission line as shown in FIG. 10 and its characteristics are measured. That is, the subject 11 is brought into contact with the subject measurement position on the transmission path, and the electrical characteristics (S 11M, S 21M, S 12M, S 22M ) are measured. At this time, when the subject 11 has two terminals, the signal conductors 22a and 22b may be connected in series as shown in FIG. 10A. However, in the case of three terminals or four terminals, FIG. What is necessary is just to connect between signal conductor 22a, 22b and the grounding conductor 23 like (b). Therefore, the measuring method according to this embodiment can be applied not only to a two-terminal electronic component but also to an electronic component having three or more terminals such as a filter.
実施例2の校正の誤差モデルはTRL補正の誤差モデルと同じものであるから、実際の被検体測定結果から誤差の影響を除去するにはTRL補正と同様の計算を行えば良く、誤差の影響を除去する数式を以下に記載しておく。なお、本式は2ポート測定の場合の反射係数をもとに計算する式であるが、誤差要因の影響を除去するには、ネットワークアナライザの4つのレシーバ出力から計算してもよい。また、3ポート以上の場合にも、本式と同様の式を使用してもよいし、あるいは回路シミュレーション手法を用いて誤差要因の影響を除去しても良い。要するに、どのような公知技術を選択しても良い。なお、数式25において、D2 は中間変数である。
前記のように伝送路特性ξから伝送路材料の誘電率を求め、さらに特性インピーダンスを求める一方、数式25を用いて求めた誤差要因を除去した被検体の反射係数の真値と、伝送路の特性インピーダンスとから、被検体のインピーダンスを算出することができる。 As described above, the dielectric constant of the transmission line material is obtained from the transmission line characteristic ξ, and further the characteristic impedance is obtained. On the other hand, the true value of the reflection coefficient of the subject from which the error factor obtained using Equation 25 is removed, and the transmission line The impedance of the subject can be calculated from the characteristic impedance.
−Sパラメータからインピーダンスへの変換−
前記の校正法は2ポートのシリーズ法であるので、前記の校正法により誤差要因の校正を行って得られた反射係数の真値S11A、S21A を用いて、数式26により被検体のZパラメータZ11A 、Z21Aを計算する。
Since the calibration method is a two-port series method, the true value of the reflection coefficient S 11A and S 21A obtained by calibrating the error factor by the calibration method is used, and the subject's Z Parameters Z 11A and Z 21A are calculated.
図11は、被検体をシャント法で測定するための測定治具30を示す。測定治具30としては、誘電体よりなる治具基板31の上面に1つの信号導体32が長さ方向に連続的に延びるように配置され、信号導体32の幅方向両側に間隔をあけて接地導体33が配置されたCPWを使用している。なお、治具基板31の裏面にも接地導体を設けてもよい。コネクタ34,35は同軸ケーブル36,37を介して測定器の一例であるネットワークアナライザ38の測定ポート38a〜38dに接続されている。同軸ケーブル36,37の信号線は信号導体32の両端に半田付けや溶接等によって固定されている。 FIG. 11 shows a measuring jig 30 for measuring a subject by the shunt method. As the measurement jig 30, one signal conductor 32 is arranged on the upper surface of a jig substrate 31 made of a dielectric so as to extend continuously in the length direction, and is grounded at intervals on both sides in the width direction of the signal conductor 32. A CPW in which the conductor 33 is disposed is used. A ground conductor may also be provided on the back surface of the jig substrate 31. Connectors 34 and 35 are connected via coaxial cables 36 and 37 to measurement ports 38a to 38d of a network analyzer 38 which is an example of a measuring instrument. The signal lines of the coaxial cables 36 and 37 are fixed to both ends of the signal conductor 32 by soldering or welding.
この実施例の場合も、実施例1,2と同様に、被検体を測定する位置(図11の測定点11)において、短絡基準10を伝送路にシャント接続し、信号導体32と接地導体33とを短絡状態として測定を行い、反射係数をS11M1を測定する。続いて、測定点1からポート1方向またはポート2方向に離れた3箇所の測定点2〜4で短絡基準を接続した校正測定を実施する。
図11では、測定点2〜4を測定点1に対してポート1側のみに設けたが、測定点1を間にして両側(ポート1側とポート2側)に振り分けて設けてもよい。ポート2側に設けた場合には、ポート1側に対して距離Lの正負符号が逆になる。両側に測定点2〜4を設けた場合には、伝送路が短くても有効なデータを得ることができる。Also in this embodiment, as in the first and second embodiments, the short-circuit reference 10 is shunt-connected to the transmission line at the position where the subject is measured (measurement point 11 in FIG. 11), and the signal conductor 32 and the ground conductor 33 are connected. Are measured in a short-circuit state, and the reflection coefficient is measured as S 11M1 . Subsequently, calibration measurement is performed with the short-circuit reference connected at three measurement points 2 to 4 separated from the measurement point 1 in the port 1 direction or the port 2 direction.
In FIG. 11, the measurement points 2 to 4 are provided only on the port 1 side with respect to the measurement point 1, but may be provided separately on both sides (port 1 side and port 2 side) with the measurement point 1 in between. When it is provided on the port 2 side, the sign of the distance L is reversed with respect to the port 1 side. When the measurement points 2 to 4 are provided on both sides, effective data can be obtained even if the transmission path is short.
−スルー状態での測定−
短絡基準10による測定とは別に、スルー状態(ポート間直結状態)での測定を行う。スルー状態とは、実際には測定治具である伝送路に何も接続せずに測定を行うだけである。測定値は、反射係数がS11MTで、伝達係数はS21MTとする。-Measurement in the through state-
Separately from the measurement based on the short-circuit standard 10, measurement is performed in a through state (direct connection state between ports). In the through state, the measurement is actually performed without connecting anything to the transmission line which is a measurement jig. Measurements, reflection coefficient at S 11MT, the transfer coefficient and S 21MT.
実施例3の校正方法の誤差モデルを図12に示す。これは特に新規なものではなく、従来から使用されているSOLT補正の誤差モデルと同じものである。図中のS11M 、S21M は反射係数及び伝達係数の測定値であり、S11A、S21A等は被検体の散乱係数の真値である。
未知数は1ポート測定の誤差係数が3つ(EDF、ESF、ERF)と、伝送路特性ξが1つの合計4つである。そのため、短絡基準10を伝送路の4箇所で短絡させ、そのときの反射係数の測定値(S11M1、S11M2、S11M3、S11M4)によって4つの方程式を作ることができるので、全ての未知数(EDF、ESF、ERFおよびξ)を求めることができる。
実施例1と同様にしてξが求まれば、以下の数式28によってEDF、ESF、ERFを求めることができる。なお、Denom は中間変数である。
The unknown has four error factors for one-port measurement (E DF , E SF , E RF ) and one transmission line characteristic ξ. Therefore, the short-circuit reference 10 can be short-circuited at four locations on the transmission line, and four equations can be created based on the measurement values (S 11M1 , S 11M2 , S 11M3 , S 11M4 ) of the reflection coefficient at that time. (E DF , E SF , E RF and ξ) can be determined.
If ξ is obtained in the same manner as in the first embodiment, E DF , E SF , and E RF can be obtained by the following Expression 28. Denom is an intermediate variable.
スルー状態での誤差係数(ELF、ETF)は、理想のスルー状態の反射係数と伝達係数の測定値(S11MT、S21MT)と、既に求めた誤差係数(EDF、ESF、ERF)とから次式で導出することができる。
−被検体の測定−
誤差係数が求まれば、図13に示すように、被検体11を被検体測定位置P1の信号導体32と接地導体33間に接続し、被検体の順方向・逆方向の反射係数および伝達係数(S11M,S21M,S12M,S22M )を測定する。測定系の誤差係数(EDF、ESF、ERF、ELF、ETF)を用いて、被検体の測定値(S11M、S21M)から次式によって被検体の電気特性の真値(S11A、S21A)を求めることができる。
When the error coefficient is obtained, as shown in FIG. 13, the subject 11 is connected between the signal conductor 32 and the ground conductor 33 at the subject measurement position P1, and the reflection coefficient and transmission coefficient in the forward / reverse direction of the subject. ( S11M, S21M, S12M, S22M ) are measured. Using the measurement system error coefficients (E DF , E SF , E RF , E LF , E TF ), the true value of the electrical characteristics of the object (S 11M , S 21M ) S11A , S21A ) can be obtained.
−Sパラメータからインピーダンスへの変換−
前記の校正法は2ポートのシャント法であるので、前記の校正法により誤差要因の校正を行って得られた反射係数の真値S11A、S21A を用いて、数式31により被検体のZパラメータZ11A 、Z21Aを計算する。
Since the calibration method is a two-port shunt method, the true value of the reflection coefficient S 11A and S 21A obtained by calibrating the error factor by the calibration method is used to calculate the Z Parameters Z 11A and Z 21A are calculated.
実施例1〜3では、基板の誘電率測定に用いる測定治具と、被検体の測定と校正に用いる測定治具とが同一のCPWである場合について説明したが、これ以外にも基板の誘電率測定に用いる測定治具と、被検体の測定と校正に用いる測定治具とが同一でなくても、電子部品のインピーダンス特性を測定することができる。ここで、誘電率測定用測定治具と測定・校正用測定治具とが同一でないとは、使用されている誘電体材料が同じであれば、両者の伝送路形状が異なるものであってもよいという意味である。
具体的には、まず基板の誘電率測定に用いる測定治具としてCPWの伝送路を作製し、実施例1と同様の手法で誘電率を求め、伝送路の特性インピーダンスを算出する。
次に、誘電率測定に用いた測定治具と同一ロットの誘電体材料で被検体の測定と校正に用いる測定治具を作製し、本発明方法または公知の方法(例えばTRL校正)で校正を行い、電子部品のSパラメータを測定する。なお、校正で使用する伝送路は、CPW、マイクロストリップライン、スロットラインなどを用いることができ、特に限定されるものではない。
さらに、電子部品のSパラメータから算出したZパラメータと前記伝送路の特性インピーダンスとを、それぞれ同じ周波数での値同士で乗じることにより、従来より精度の高い電子部品のインピーダンス特性を求めることができる。In the first to third embodiments, the case where the measurement jig used for measuring the dielectric constant of the substrate and the measurement jig used for measuring and calibrating the object are the same CPW has been described. Even if the measurement jig used for the rate measurement and the measurement jig used for the measurement and calibration of the object are not the same, the impedance characteristic of the electronic component can be measured. Here, the measurement jig for dielectric constant measurement and the measurement jig for measurement / calibration are not the same, as long as the dielectric material used is the same, even if both transmission line shapes are different. It means good.
Specifically, first, a CPW transmission line is prepared as a measurement jig used for measuring the dielectric constant of the substrate, the dielectric constant is obtained by the same method as in Example 1, and the characteristic impedance of the transmission line is calculated.
Next, a measurement jig used for measuring and calibrating the specimen is made of the same dielectric material as the measurement jig used for dielectric constant measurement, and calibrated by the method of the present invention or a known method (for example, TRL calibration). And measure the S parameter of the electronic component. Note that a CPW, a microstrip line, a slot line, or the like can be used as a transmission line used for calibration, and is not particularly limited.
Furthermore, by multiplying the Z parameter calculated from the S parameter of the electronic component and the characteristic impedance of the transmission line by values at the same frequency, the impedance characteristic of the electronic component with higher accuracy than before can be obtained.
本発明の好ましい実施形態によれば、下記のような効果が得られる。
(1)各周波数範囲ごとに、同一の基板伝送路上の少なくとも4箇所で、信号導体と接地導体を短絡した状態(短絡基準を接続した状態)の1ポートのSパラメータの測定を行って、誤差補正により、コネクタと平面伝送路の不整合部を完全に除去した上で、伝送路の特性(伝達度α及び位相定数β)を求めるので、より正確な誘電率、tanδを測定できる。
(2)従来の誘電率測定方法では、各測定方法に合わせて、誘電体材料を加工しなければならず、実際に使用されるような伝送線路の形態で測定できていなかったが、本発明では伝送線路の形態のまま、誘電率、tanδを測定できるため、実際に使用される伝送線路の誘電率、tanδを知ることができる。
(3)従来の誘電率測定方法から求められた誘電率は材料の比誘電率であるが、本発明では実効誘電率εeff を直接求めることができるので、このεeff から特性インピーダンスをそのまま計算することができる。
(4)従来の誘電率測定方法で求められた材料の比誘電率は有効数字が2桁程度と寸法精度に比べて低いため、それを用いて算出した特性インピーダンスの精度は低くならざるを得なかったが、本発明によって得られる実効誘電率εeff の有効数字は寸法精度と同等になるため、従来より精度の高い特性インピーダンスを求めることが可能である。
(5)従来の誘電率測定法でよく使用される共振法では、誘電率、tanδの周波数特性を求めることができなかったが、本発明では、測定周波数範囲ごとの誘電率、tanδを求めることができる。
(6)従来では購入した材料ロットの誘電率のデータを正確に把握することができなかったが、本発明では購入した材料ロットの誘電率、tanδのデータを正確に把握することができる。According to a preferred embodiment of the present invention, the following effects can be obtained.
(1) For each frequency range, the S-parameter of one port in the state where the signal conductor and the ground conductor are short-circuited (the state where the short-circuit reference is connected) is measured at least at four locations on the same substrate transmission line, and the error is measured. Since the mismatching between the connector and the planar transmission line is completely removed by correction, the characteristics of the transmission line (transmittance α and phase constant β) are obtained, so that a more accurate dielectric constant and tan δ can be measured.
(2) In the conventional dielectric constant measurement method, the dielectric material has to be processed in accordance with each measurement method, and it has not been possible to measure in the form of a transmission line that is actually used. Then, since the dielectric constant and tan δ can be measured in the form of the transmission line, the dielectric constant and tan δ of the transmission line actually used can be known.
(3) The dielectric constant obtained from the conventional dielectric constant measurement method is the relative dielectric constant of the material, but in the present invention, the effective dielectric constant ε eff can be directly obtained, so the characteristic impedance is directly calculated from this ε eff. can do.
(4) Since the relative dielectric constant of the material obtained by the conventional dielectric constant measurement method has a significant figure of about two digits, which is lower than the dimensional accuracy, the accuracy of the characteristic impedance calculated using it must be low. Although the effective figure of the effective dielectric constant ε eff obtained by the present invention is equivalent to the dimensional accuracy, it is possible to obtain a characteristic impedance with higher accuracy than before.
(5) In the resonance method often used in the conventional dielectric constant measurement method, the frequency characteristics of the dielectric constant and tan δ cannot be obtained. In the present invention, the dielectric constant and tan δ for each measurement frequency range are obtained. Can do.
(6) Conventionally, the dielectric constant data of the purchased material lot could not be accurately grasped. However, in the present invention, the dielectric constant and tan δ data of the purchased material lot can be accurately grasped.
さらに、本発明によって誘電率測定方法が確立したため、下記のようなことが可能になった。
(1)ネットワークアナライザによる電子部品の高周波インピーダンス測定において、測定系の誤差要因を除去するTRL校正法をはじめとする校正法では、電子部品のインピーダンスを求めるために、測定系の誤差要因を校正して得られたSパラメータから算出したZパラメータに、測定に使用した伝送路の特性インピーダンスを乗じる必要があるが、各周波数範囲毎の誘電率が精度よく求めることができたため、特性インピーダンスの精度がよくなり、電子部品のインピーダンス特性を精度よく求めることができるようになった。
(2)予め実際に使用する基板の誘電率、tanδを本発明により求めておけば、高周波回路設計における設計精度を向上させることができる。
(3)誘電体の高周波誘電率、tanδの測定においては、従来、測定法および設備に応じて、誘電体材料を加工しなければならなかったが、比較的容易な加工で、誘電率、tanδの測定が可能になり、高周波材料の評価が容易になった。
(4)高周波伝送基板に使用される材料の誘電率、tanδの測定が容易になった。Furthermore, since the dielectric constant measurement method has been established by the present invention, the following can be performed.
(1) In high-frequency impedance measurement of electronic components using a network analyzer, calibration methods such as the TRL calibration method that eliminates error factors in the measurement system calibrate the error factors in the measurement system in order to obtain the impedance of the electronic component. It is necessary to multiply the Z parameter calculated from the S parameter obtained in this way by the characteristic impedance of the transmission line used for the measurement, but since the dielectric constant for each frequency range can be obtained with high accuracy, the accuracy of the characteristic impedance is As a result, the impedance characteristics of electronic components can be accurately obtained.
(2) If the dielectric constant and tan δ of the substrate actually used are determined in advance according to the present invention, the design accuracy in high-frequency circuit design can be improved.
(3) In the measurement of the high-frequency dielectric constant and tan δ of the dielectric, conventionally, the dielectric material had to be processed according to the measurement method and equipment, but the dielectric constant and tan δ were relatively easily processed. Measurement of high-frequency materials became easy.
(4) The dielectric constant and tan δ of the material used for the high-frequency transmission board can be easily measured.
Claims (10)
前記伝送路の長さ方向の少なくとも4箇所において、信号導体と接地導体とを短絡させて電気特性を測定するステップと、
前記短絡状態での測定値から、前記伝送路の特性を算出するステップと、
前記伝送路の特性から、前記伝送路材料の誘電率およびtanδの少なくとも1つを算出するステップと、を有する伝送路材料の誘電率測定方法。Preparing a measuring jig having a transmission path whose electrical characteristics per unit length are unknown, comprising a signal conductor and a ground conductor on a dielectric substrate;
Measuring the electrical characteristics by short-circuiting the signal conductor and the ground conductor in at least four locations in the length direction of the transmission path;
From the measured value in the short circuit state, calculating the characteristics of the transmission path;
Calculating at least one of a dielectric constant and tan δ of the transmission line material from characteristics of the transmission line, and measuring a dielectric constant of the transmission line material.
前記散乱係数を用いて伝送路特性ξ(ξ=α-2exp(j2β) 、α:伝達度[U/mm]、β:位相定数[rad/mm])を算出することを特徴とする請求項1または2に記載の伝送路材料の誘電率測定方法。For each frequency range to be measured, the scattering coefficient of one port with the signal conductor and the ground conductor short-circuited is measured at least at four locations on the transmission line.
A transmission path characteristic ξ (ξ = α −2 exp (j2β), α: transmission [U / mm], β: phase constant [rad / mm]) is calculated using the scattering coefficient. Item 3. A dielectric constant measurement method for a transmission line material according to Item 1 or 2.
前記伝送路に被測定電子部品を接続した状態で、その散乱係数Sxxを測定するステップと、
前記測定された被測定電子部品の散乱係数Sxxから前記伝送路の誤差係数Exxを除去し、被測定電子部品の散乱係数の真値SxxAを求めるステップと、
前記被測定電子部品の散乱係数の真値SxxAから、ZパラメータZxxAを求めるステップと、を含むことを特徴とする電子部品の電気特性測定方法。A step of calculating a transmission path error coefficient E xx together with the transmission path characteristic ξ from the measured value in the short-circuit state in the dielectric constant measurement method according to claim 1;
Measuring the scattering coefficient S xx with the measured electronic component connected to the transmission line;
Removing the error coefficient E xx of the transmission line from the measured scattering coefficient S xx of the electronic component to be measured to obtain a true value S xxA of the scattering coefficient of the electronic component to be measured;
Obtaining a Z parameter Z xxA from a true value S xxA of a scattering coefficient of the electronic component to be measured.
前記測定治具の誘電体基板と同じ材料で形成された測定・校正用測定治具を準備し、その測定治具の伝送路の誤差係数Exxを求めるステップと、
前記測定・校正用測定治具の伝送路に被測定電子部品を接続した状態で、その散乱係数Sxxを測定するステップと、
前記測定された被測定電子部品の散乱係数Sxxから前記伝送路の誤差係数Exxを除去し、被測定電子部品の散乱係数の真値SxxAを求めるステップと、
前記被測定電子部品の散乱係数の真値SxxAから、ZパラメータZxxAを求めるステップと、を含むことを特徴とする電子部品の電気特性測定方法。
Calculating the transmission line characteristic ξ from the measured value in the short-circuit state in the dielectric constant measurement method according to claim 1;
Preparing a measurement / calibration measurement jig formed of the same material as the dielectric substrate of the measurement jig, and obtaining an error coefficient E xx of the transmission path of the measurement jig;
Measuring the scattering coefficient S xx in a state where the electronic device to be measured is connected to the transmission path of the measurement / calibration measuring jig;
Removing the error coefficient E xx of the transmission line from the measured scattering coefficient S xx of the electronic component to be measured to obtain a true value S xxA of the scattering coefficient of the electronic component to be measured;
Obtaining a Z parameter Z xxA from a true value S xxA of a scattering coefficient of the electronic component to be measured.
請求項8または9に記載の電子部品の電気特性測定方法で求めた被測定電子部品のZパラメータZxxAと、前記伝送路の特性インピーダンスとから、被測定電子部品のインピーダンスを求めるステップと、を含むことを特徴とする電子部品の電気特性測定方法。Calculating the characteristic impedance of the transmission line from the dielectric constant of the transmission line material obtained by the dielectric constant measurement method according to claim 1;
The step of obtaining the impedance of the electronic component to be measured from the Z parameter Z xxA of the electronic component to be measured obtained by the electrical property measuring method of the electronic component according to claim 8 or 9, and the characteristic impedance of the transmission path. A method for measuring electrical characteristics of electronic parts, comprising:
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