JPS6358706A - Electric film - Google Patents
Electric filmInfo
- Publication number
- JPS6358706A JPS6358706A JP61201251A JP20125186A JPS6358706A JP S6358706 A JPS6358706 A JP S6358706A JP 61201251 A JP61201251 A JP 61201251A JP 20125186 A JP20125186 A JP 20125186A JP S6358706 A JPS6358706 A JP S6358706A
- Authority
- JP
- Japan
- Prior art keywords
- film
- aluminum
- thin film
- coating
- anodized aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 27
- 238000000576 coating method Methods 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 claims description 19
- 229910000838 Al alloy Inorganic materials 0.000 claims description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 34
- 238000000034 method Methods 0.000 description 17
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- -1 fluororesin Substances 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Insulated Conductors (AREA)
- Insulating Bodies (AREA)
- Physical Vapour Deposition (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
- Formation Of Insulating Films (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、誘電層、抵抗層、絶縁Ｆ８ｉなどに使用する
電気皮膜に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to electrical coatings for use in dielectric layers, resistive layers, insulation F8i, etc.
従来の技術
従来、代表的な電気の良脣体であるアルミニウム系の合
金は、電気工業に８３いて、各種電気部品あるいは（Ｉ
１１１００＋Ａ利に、その軽量性、加工容易性、耐腐蝕
性＜２とのゆえに多用されている。BACKGROUND OF THE INVENTION Aluminum-based alloys, which are typical electrical materials, have been used in the electrical industry for 83 years, and are used in various electrical parts and (I).
11100+A is widely used due to its light weight, ease of processing, and corrosion resistance <2.
そのアルミニウム系合金表面の保護＋Ａ制あるいは絶縁
＋Ａ利として、陽極酸化法により酸化アルミニウム層を
析出・形成させて用いることは広く知られている。第７
図は、従来の陽４〜酸化アルミニウム皮＋１Ａの断面図
を承りものである。陽極酸化アルミニウム皮膜は、酸化
物生成の過程で；！ｊｊ故の孔が生じ、多孔性となり、
表面’Ｆｌ’ｌが実Ｙｒｉ上増大している。この陽（〜
酸化フッルミニウム皮ｊ摸をワックス、４つ４脂などで
封孔処１！ｌ！ シて耐湿性を向上することし知られて
いる。It is widely known that an aluminum oxide layer is deposited and formed by an anodic oxidation method to protect and insulate the aluminum alloy surface. 7th
The figure is a cross-sectional view of a conventional positive 4 to aluminum oxide skin +1A. Anodized aluminum film is formed in the process of oxide formation;! Due to jj, pores are created and become porous,
The surface 'Fl'l increases over the actual Yri. This sun (~
Sealing the fluoruminium oxide leather with wax, 4x4, etc. 1! l! It is known to improve moisture resistance.
又陽極酸化処理技術は、比幀的装迄コス１〜が安いこと
、基体全屈との結着が強力でおること、皮膜の硬度が極
めて高いこと、生成する膜厚を制御できること等、捨て
り「い多くのメリットがある。In addition, anodizing technology has advantages such as low cost compared to 1 ~, strong bonding with the total bending of the substrate, extremely high hardness of the film, and ability to control the thickness of the film produced. ``There are many benefits.
一方、近年、半導体製造プロセスでＪ：り用いられる薄
膜作成技術の進歩は著しく、種々の（Ａ料に応じた各種
薄膜作成法が多数提案され、実施されている。しかしな
がら、これ等薄膜は、生成速度が遅いこともおり、太陽
電池やアモルファスシリコン感光体などの例を除き、一
般に故１０人から数μｍ程度の薄い厚さで用いられるこ
とが多い。On the other hand, in recent years, there has been remarkable progress in thin film production technology used in semiconductor manufacturing processes, and many methods for producing thin films have been proposed and implemented according to various materials. Due to the slow production rate, it is generally used at a thin thickness of about 10 to several μm, except for solar cells and amorphous silicon photoreceptors.
又、用途も半導体の製造に限られ、その他の別能部品に
は、未だ活用されていないのが現状である。Furthermore, its use is limited to the manufacture of semiconductors, and currently it has not yet been utilized for other specialized parts.
発明が解決しようとする問題点
所で、陽極酸化アルミニウム皮膜は、前記のように多孔
性であり、又酸化アルミニウム自体が元来水分子を化学
的又は物理的に吸着し易く、その特性、特に電気特性が
、環境の湿度変化よって大ぎく変動し、著しく不安定で
ある。又、ワックス、樹脂などで封孔処理しても所望の
電気特性を得ることができない。したがって、誘電層、
抵抗層、絶縁層などとしてイＪ刊に使用り′ることは出
来ない。The problem to be solved by the invention is that the anodized aluminum film is porous as described above, and aluminum oxide itself tends to chemically or physically adsorb water molecules, and its properties, especially The electrical characteristics fluctuate greatly due to changes in environmental humidity and are extremely unstable. Further, even if the pores are sealed with wax, resin, etc., desired electrical characteristics cannot be obtained. Therefore, the dielectric layer,
It cannot be used as a resistive layer, an insulating layer, etc.
本発明は、アルミニウム系合金上に形成された陽１へア
ルミニウム皮膜にお（プる上記の欠点を解消する為にな
されたしのであって、 新しい薄膜作成技術を利用して
陽極酸化アルミニウム皮膜表面を無機質抵抗性肋膜によ
り被醪することによって、湿度の影響を受けず、特性が
安定な電気皮膜を（是供することを［目的とするもので
ある。本発明は、又、電気的、（攻城的に適度な厚さの
制Ｖ＋＋が可能で、かつ強度が高く、製造コス１〜も低
い電気皮膜を提供することを目的とするものでおる。The present invention has been made to solve the above-mentioned drawbacks of anodized aluminum films formed on aluminum-based alloys. It is an object of the present invention to provide an electrical coating which is not affected by humidity and whose properties are stable by covering it with an inorganic resistive membrane. The object of the present invention is to provide an electrical coating that can control V++ to a suitable thickness, has high strength, and has a low manufacturing cost.
本発明は、又、従来からある陽極酸化処理技術と力ｉし
い’（１’ｒ’膜作成技術を組み合わしることにより、
強度、耐ｉり性などの物理的特性と絶縁性、誘電性など
の電気的性′Ｌ′−１を両立さゼた電気皮膜を（；２供
することを目的とするものである。The present invention also achieves
The purpose of this invention is to provide an electrical coating that has both physical properties such as strength and resistance to irradiation and electrical properties such as insulation and dielectric properties.
問題点を解決するための手段及び作用
本発明の電気皮膜は、アルミニウム合金塁体表面に形成
された陽極酸化アルミニウム皮膜及びその表面を被覆す
るｊ！ｕ 殿Ｆｌ抵抗ｔｉｔ薄膜から、＋’＋’成され
る。Means and Action for Solving the Problems The electrical coating of the present invention is an anodized aluminum coating formed on the surface of an aluminum alloy base and covering the surface. +'+' is formed from the u film resistor Tit.
本発明において、陽４水酸化アルミニウム皮膜は、封孔
処理されたものでおるのが好ましい。なぜならば、封孔
処理を施すことにより、無機質抵抗性薄膜の結着を良く
し、又無機質抵抗性薄膜表面の平滑性が向上するからで
ある。In the present invention, it is preferable that the cationic aluminum hydroxide film be subjected to a pore sealing treatment. This is because the sealing treatment improves the binding of the inorganic resistive thin film and improves the smoothness of the surface of the inorganic resistive thin film.
本発明において、無機質抵抗性薄膜は、窒化けい素（Ｓ
１３Ｎ４）、酸化けい素（ＳｉＯ２）、炭化けい素（Ｓ
ｉ Ｃ） 、窒化アルミニウム（ＡｌＮ）、アルミナ
（Ａ Ｉ ２０３ ） 、ジルコニア（ＺｒＯ２）、リ
ンガラス（ＰＳＧ＞ 、シリコンオキシティ１〜ライド
（ＳｊＯｘＮｙ〉、窒化則索（ＢＮ＞、絶縁性炭素（Ｃ
）から選択されたものから構成される。In the present invention, the inorganic resistive thin film is silicon nitride (S
13N4), silicon oxide (SiO2), silicon carbide (S
iC), aluminum nitride (AlN), alumina (AI203), zirconia (ZrO2), phosphorus glass (PSG>), silicon oxytylene (SjOxNy>), nitride (BN>), insulating carbon (C
) is selected from.
本発明の電気皮膜において、陽極酸化アルミニウム皮膜
の厚さは、一般にＩＱ、ｕｍ〜数１００μｍでめる。又
、無機質抵抗性薄膜の厚さは、数１０人〜１０数μｍで
おるのが実用上有利である。In the electrical coating of the present invention, the thickness of the anodized aluminum coating is generally IQ, um to several 100 μm. Further, it is practically advantageous for the thickness of the inorganic resistive thin film to be in the range of several tens to several tens of micrometers.
なぜならば、耐湿性などの１Ωれた無）幾７１抵抗性薄
膜のみて故１０ｕＴｎの厚さにすることも考えられるが
、その様な厚さのｂの５−得るには、数時間から故１０
１１．’１間を要し、コストの点で実用↑（ｌが乏しい
。This is because it is conceivable to make a 1Ω resistive thin film with moisture resistance etc. to a thickness of 10uTn, but to obtain such a thickness of 1Ω, it would take several hours to 10
11. It takes 1 hour and is not practical in terms of cost.
次に、本発明を図面によって３１明する。第１図ないし
第４図は、それぞれ本発明の実施例の断面図でおる。図
中、１は、アルミニウム合金基体、２は陽４４ｊ酸化ア
ルミニウム皮膜、３は無ＩＸｉ Ｙ！Ｊ抵抗抵抗性膜９
膜は孔でおる。これら第１図ないし第４図に示される状
態は、陽極酸化アルミニウム皮膜の形成状態と、使用す
る皮ｊ摸形成方法及び皮膜形成１１．’Ｊ間等の条件の
相違によって生じるものである。Next, the present invention will be explained in more detail with reference to the drawings. 1 to 4 are sectional views of embodiments of the present invention, respectively. In the figure, 1 is an aluminum alloy substrate, 2 is a positive 44j aluminum oxide film, and 3 is a non-IXi Y! J resistance resistive film 9
The membrane is perforated. The conditions shown in FIGS. 1 to 4 are the formation conditions of the anodized aluminum film, the method used to form the skin pattern, and the film formation method 11. ' This is caused by differences in conditions such as between J.
すなわら、第１図においては、アルミニウム合金）、￥
体１の表面に形成された）ノルミニラム皮膜２の最外面
のみに無ｇｌ ＋ｉｊｉ抵抗↑抵抗膜３が形成されてイ
ル。第２ 図Ｌ Ｊ３ Ｃ１’ Ｌ Ｉｒ３．７ＨＢｔ
５ ＋、ｉ；ｉ抵抗−Ｉ１１． ｉｉ？ Ｉｌｑ ３
１．１、孔の上部にブリッヂを形成し、孔を塞いだ状態
で形成されている。第３図においては、５！！ｊ ’幾
７ｊ１抵抗’ｊ’、ｌ’、 ’＜’（’ｒ’膜を形成１
−る材料が、孔の内部まで進入して孔を埋めた状態で皮
膜を形成していう。又、第４図においては、照槻Ｙ１抵
抗性薄膜３が孔に沿って被着した状態で形成されている
。In other words, in Figure 1, aluminum alloy), ¥
A resistive film 3 is formed only on the outermost surface of the norminlum film 2 (formed on the surface of the body 1). Figure 2 L J3 C1' L Ir3.7HBt
5 +, i; i resistance -I11. ii? Ilq 3
1.1. A bridge is formed above the hole to close the hole. In Figure 3, 5! ! j '7j1 resistance 'j', l', '<'('r' film formed 1
The material enters into the pores and forms a film, filling the pores. Further, in FIG. 4, the Terutsuki Y1 resistive thin film 3 is formed in a state where it is adhered along the hole.
第５図及び第６図は、陽極酸化アルミニウム皮膜２を１
１孔処理した場合における本発明の実施例で必る。第５
図において、（ａ＞は、陽極酸化アルミニウム皮膜の状
態を示し、（ｂ）は、水相封孔処理を施した後の状態を
示し、（Ｃ）は、封孔処理された陽極酸化アルミニウム
皮膜上に７！ＩＩ ｉｉ ＩＨ１抵抗性薄膜３を形成さ
せた状態を示す。第６図においては封孔処理をｙ！”機
物質又は有数物質からなる月孔月料を用いて行っている
。第６図中、（ａ＞、（ｂ）及び（ｃ）は、それぞれ、
１“４孔処理を１゛４孔＋Ａわ１５を用いて行った以外
は、第５図にＪ′３けると同ｈｘの状態を示す。5 and 6 show that the anodized aluminum film 2 is
This is necessary in the embodiment of the present invention when one hole is processed. Fifth
In the figure, (a> shows the state of the anodized aluminum film, (b) shows the state after water phase sealing treatment, and (C) shows the anodized aluminum film that has been sealed. A state in which a 7!II ii IH1 resistive thin film 3 is formed is shown on the top. In FIG. In Figure 6, (a>, (b) and (c) are respectively,
J'3 in FIG. 5 shows the same condition as hx, except that the 1"4 hole process was carried out using 1"4 holes + A15.
次に、本発明の電気皮膜の形成方法について説明する。Next, a method for forming an electric coating according to the present invention will be explained.
所望の形状を有するアルミニウム合金槽体を常法により
陽）型間化した俊、所望により、形成した陽極酸化アル
ミニウム皮膜に１１孔処理を施す。An aluminum alloy tank body having a desired shape is formed into a mold by a conventional method, and if desired, an 11-hole treatment is performed on the formed anodized aluminum film.
封孔処理は、どのような方法によって実施しても好い。The sealing treatment may be carried out by any method.
例えば、水和封孔は、水分を含んだ雰囲気によって陽、
ｉ〜酸化アルミニウム皮膜を加熱処理し、陽、）１１λ
酸化アルミニウム皮ｊ模の上層を水和酸化物に変えるこ
とににって行うことができ、上記加熱処理として、一般
には加圧水蒸気処理法又は沸）１を水月孔法が用いられ
る。この処理により、孔の檗が膨服し、Ｔｊに孔の入り
口付近では、孔が完全に塞がれる。For example, hydration sealing involves
i ~ Heat treatment of aluminum oxide film, positive, ) 11λ
This can be carried out by changing the upper layer of the aluminum oxide skin to a hydrated oxide, and the above heat treatment is generally carried out by a pressurized steam treatment method or a boiling method. By this treatment, the hole of the hole swells, and the hole is completely closed near the entrance of the hole at Tj.
封孔処理の仙の方法としては、シリカゾル、アルミナゾ
ル等のｊｕｊ ＬＮコに１イド溶液中に酸化アルミニウ
ム皮膜を浸漬し、電解処理する方法や、アクリル樹脂、
エポキシ樹脂、フッ素樹脂あるいはワックス力１を浸漬
又は塗装により孔に埋め込む方法が利用でさ“る。Typical methods for sealing include immersing the aluminum oxide film in a 1-ide solution of silica sol, alumina sol, etc. and electrolytically treating it, and acrylic resin,
A method of filling the holes with epoxy resin, fluororesin, or wax by dipping or painting is available.
次いで、陽極１喪化アルミニウム皮膜の上に、ｊ！’１
’％門７′ｉ抵抗・１（［源肱を形成さける。すなわら
、窒化（〕い索（Ｓ！３Ｎ、１）、酸化けい素（Ｓ！０
２）、炭化けい素（Ｓ ＋ ｃ＞ 、窒化ｙ／ルミ二１
ツム（△ＩＮ）、アルミナ（Ａ Ｉ ２０３ ＞ 、ジ
ルコニア（ＺｒＯ２）、リンガラス（ＰＳＧ） 、シリ
コンオキシナイトライド（ＳｉＯｘＮｙ）、窒化ｆＪＪ
ＩＩ索（ＢＮ＞、絶縁性炭素（Ｃ）から選択された７７
％（門材わ１を用い、その被着す法として、（１）プラ
ス？ＣＶＤを含むＣＶＤ （Ｃｈｅｍｉｃａｌ Ｖａｐ
ｏｒＤｅｐｏｓ ｒ ｔ ｉｏｎ化学的気相成長）法（
２）加熱又は電子ビーム等による真空蒸着法、（３）不
活性ガスイオンをターゲットに仲ｊ突さけるスパッタリ
ング、（４）印刷したｌ、Ｊお１の焼成などを用いるこ
とによって、無別貿抵抗性薄；１つ）を形成させる。Next, j! '1
'% Gate 7'i Resistance 1 ([Avoid the formation of sources. Namely, nitride (S!3N, 1), silicon oxide (S!0
2), silicon carbide (S + c>, nitride y/lumini 1
Tsum (△IN), alumina (A I 203 >, zirconia (ZrO2), phosphorus glass (PSG), silicon oxynitride (SiOxNy), nitride fJJ
II cord (BN>, 77 selected from insulating carbon (C)
(1) CVD (Chemical Vap
orDeposer tion (Chemical Vapor Deposition) method (
2) Vacuum deposition using heating or electron beams, (3) Sputtering in which inert gas ions are used as a target, (4) Baking of printed L and J1, etc. 1) to form.
上記の被着方法は、本発明の電気皮膜の用途に応じて使
用する材料と適宜組み合わせて用いることができる。こ
の被４方法においては、アルミニウム合金）７（体は、
３００℃以下、好ましくは２５０℃以下の温度に維持し
つつ皮膜を形成さけるのが好ましい。なぜならば、温度
を高く上げずざると、アルミニウム合金と陽極酸化アル
ミニウム皮膜の熱膨張率の舵によって陽極酸化アルミニ
ウム皮膜に亀裂を牛じるからである。一般に前記の被着
方法、特に（４）を除く（１）、（２）及び（３）の方
法では、この亀裂を薄ｊ摸で完全に被覆することはり「
シフ、本発明の電気皮膜の使用目的の達成を妨げる原因
になる。すなわち、軽度の亀裂の場合には、電気皮膜の
表面抵抗の場所的なむらが生じたり、耐湿性がまった＜
ｙｔられないという問題を生じ、重度の亀裂の場合に
は、薄膜の形成を施す前の陽１へ酸化アルミニウム皮ｌ
ｌ５１よりむしろ帯電性や絶縁性が低下してしまう。The above deposition method can be used in appropriate combination with the materials used depending on the purpose of the electrocoat of the present invention. In this method, the aluminum alloy) 7 (body is
It is preferable to avoid forming a film while maintaining the temperature at 300° C. or lower, preferably 250° C. or lower. This is because unless the temperature is raised high, the thermal expansion coefficients of the aluminum alloy and the anodized aluminum film will cause cracks in the anodized aluminum film. In general, the above-mentioned coating methods, especially methods (1), (2), and (3) except (4), do not completely cover this crack with a thin film.
Schiff, which becomes a cause of hindering the achievement of the purpose of use of the electrical coating of the present invention. In other words, in the case of mild cracks, the surface resistance of the electrical coating may become uneven in some places, and the moisture resistance may deteriorate.
If the cracks are severe, the aluminum oxide coating may be removed before the thin film is formed.
The charging property and insulation properties are deteriorated rather than l51.
実施例 以下、実施例によって本発明を説明する。Example The present invention will be explained below with reference to Examples.
実施例１
高周波マグネトロンスパッタリング装置によって、陽極
酸化アルミニウム皮膜上に酸化けい素薄膜を形成した。Example 1 A silicon oxide thin film was formed on an anodized aluminum film using a high frequency magnetron sputtering device.
すなわち、高周波マグネトロンスパッタリング装置の所
定の位置に陽極酸化アルミニウム皮膜が形成されている
アルミニウム合金幕板を設置し、一方ターグッ１〜材と
して、酸化けい素を所定の場所に設置した。装置内にア
ルゴンガスを送り、圧力を５ ｘ １０−３−ｒｏ ｒ
ｒに保らながら、高周波電力０．５ＫＷの印加の下に
、２１．’ｊ間の薄膜形成処理を行った。その結果、陽
極酸化アルミニウム皮膜上に、約１μｒｎの厚さの酸化
けい素薄膜が形成された。That is, an aluminum alloy curtain plate on which an anodized aluminum film was formed was installed at a predetermined position of a high-frequency magnetron sputtering device, and silicon oxide was placed at a predetermined position as a tar material. Send argon gas into the device and increase the pressure to 5 x 10-3-ro r
21. under the application of high frequency power of 0.5 KW while maintaining the temperature r. A thin film formation process was performed between 'j'. As a result, a silicon oxide thin film with a thickness of about 1 μrn was formed on the anodized aluminum film.
実施例２
プラズマＣＶＤ装置によって、陽極酸化アルミニウム皮
膜上に窒化けい素薄膜を形成した。すなわち、プラズマ
ＣＶＤ装置の所定の位置に陽極酸化アルミニウム皮膜が
形成されているアルミニウム合金基板を設置し、反応ガ
スとしてシラン（ＳｉＨ４＞ガスとアンモニア（ＮＨ４
）カスを導入し圧力１ＴＯｒｒ、アルミニウム合金基板
温度３００’Ｃにおいて、５０分間薄膜形成処理を行っ
た。その結果、陽極酸化アルミニウム皮膜上に、約１μ
ｍの厚さの窒化けい素薄膜が形成された。Example 2 A silicon nitride thin film was formed on an anodized aluminum film using a plasma CVD apparatus. That is, an aluminum alloy substrate on which an anodized aluminum film is formed is installed in a predetermined position of a plasma CVD apparatus, and silane (SiH4>gas and ammonia (NH4
) A thin film forming process was performed for 50 minutes at a pressure of 1 TOrr and an aluminum alloy substrate temperature of 300'C after introducing scum. As a result, about 1 μm was deposited on the anodized aluminum film.
A silicon nitride thin film with a thickness of m was formed.
発明の効果
本発明の無機質抵抗性薄膜を上層に被着した陽慢酸化ア
ルミニウムよりなる電気皮膜は、従来の陽極酸化アルミ
ニウム皮膜の封孔処理として用いられた樹脂塗装を行っ
たものとは全く特性が異なるものであり、表面の機械的
強度、硬度、耐湿性、耐熱性、耐溶剤性、クラックの無
さ、段差被覆性など、はとんどの点で勝るものである。Effects of the Invention The electrical coating made of anodic oxidized aluminum on which the inorganic resistive thin film of the present invention is applied has completely different characteristics from the resin coating used as a sealing treatment for conventional anodic oxidized aluminum coatings. They are different in terms of surface mechanical strength, hardness, moisture resistance, heat resistance, solvent resistance, absence of cracks, step coverage, etc., and are superior in most respects.
すなわち、本発明の電気皮膜は、陽極酸化アルミニウム
皮膜ににる電気的特性及び強度の要求を満たすに十分な
１ワさと、その特性を維持したまま、無機質抵抗性薄膜
にＪ：る耐湿性の両者を兼ね備えるものである。したが
って、本発明の電気皮膜は、誘電層、抵抗層、絶縁層な
どの用途に適している。That is, the electrical coating of the present invention has a strength sufficient to meet the electrical properties and strength requirements of an anodized aluminum film, and a moisture resistance of an inorganic resistive thin film while maintaining those properties. It combines both. Therefore, the electrical coating of the present invention is suitable for applications such as dielectric layers, resistive layers, and insulating layers.
第１図ないし第４図は、それぞれ本発明の実施例の概略
断面図であり、第５図及び第６図は、陽極酸化アルミニ
ウム皮１１９を」ｊ孔処理覆る場合の状態を説明１°る
もので、（ａ）はまり孔処理前、（ｂ＞は月孔処即後、
（Ｃ）は無機ｖ′ｊ抵抗性薄膜を形成さけた後の状態を
承り断面図でおり、第７図は、従来の陽極酸化アルミニ
ウム皮膜の断面図である。
１・・・アルミニウム合金基体、２・・・陽（水酸化ア
ルミニウム皮膜、３・・・無機質抵抗性簿膜、４・・・
孔、５・・・封孔何科。
第１図
箪２図
篤３図
尾４図
篤５図1 to 4 are schematic cross-sectional views of embodiments of the present invention, respectively, and FIGS. 5 and 6 illustrate the state in which the anodized aluminum skin 119 is covered with "J-hole treatment". (a) before the fitting hole treatment, (b> immediately after the moonhole treatment,
(C) is a cross-sectional view of the state after forming the inorganic v'j resistive thin film, and FIG. 7 is a cross-sectional view of a conventional anodized aluminum film. DESCRIPTION OF SYMBOLS 1... Aluminum alloy substrate, 2... Positive (aluminum hydroxide film, 3... Inorganic resistive film, 4...
Hole, 5... What type of hole sealing. Fig. 1 Fig. 2 Fig. Atsushi 3 Fig. O 4 Fig. Atsushi 5
Claims (3)
アルミニウム皮膜及びその表面を被覆する無機質抵抗性
薄膜からなる電気皮膜。(1) An electric coating consisting of an anodized aluminum coating formed on the surface of an aluminum alloy substrate and an inorganic resistive thin film covering the surface.
４）、酸化けい素（ＳｉＯ＿２）、炭化けい素（ＳｉＣ
）、窒化アルミニウム（ＡｌＮ）、アルミナ（Ａｌ＿２
Ｏ＿３）、ジルコニア（ＺｒＯ＿２）、リンガラス（Ｐ
ＳＧ）、シリコンオキシナイトライド（ＳｉＯ＿ｘＮ＿
ｙ）、窒化硼素（ＢＮ）、絶縁性炭素（Ｃ）から選択さ
れたものよりなる特許請求の範囲第１項に記載の電気皮
膜。(2) The inorganic resistive thin film is silicon nitride (Si_3N_
4), silicon oxide (SiO_2), silicon carbide (SiC
), aluminum nitride (AlN), alumina (Al_2
O_3), zirconia (ZrO_2), phosphorus glass (P
SG), silicon oxynitride (SiO_xN_
y), boron nitride (BN), and insulating carbon (C).
である特許請求の範囲第１項に記載の電気皮膜。(3) The electrical coating according to claim 1, wherein the anodized aluminum coating has been subjected to a sealing treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61201251A JPH0679444B2 (en) | 1986-08-29 | 1986-08-29 | Electric film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61201251A JPH0679444B2 (en) | 1986-08-29 | 1986-08-29 | Electric film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6358706A true JPS6358706A (en) | 1988-03-14 |
| JPH0679444B2 JPH0679444B2 (en) | 1994-10-05 |
Family
ID=16437840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61201251A Expired - Fee Related JPH0679444B2 (en) | 1986-08-29 | 1986-08-29 | Electric film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0679444B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0279309A (en) * | 1988-09-14 | 1990-03-19 | Sumitomo Electric Ind Ltd | Ceramic insulated wire |
| JPH0282817U (en) * | 1988-12-15 | 1990-06-27 | ||
| JPH02177212A (en) * | 1988-12-28 | 1990-07-10 | Furukawa Electric Co Ltd:The | Heat-proof electric wire and manufacture thereof |
| JP2010258255A (en) * | 2009-04-27 | 2010-11-11 | Fujifilm Corp | Anodic oxidation substrate, method of manufacturing photoelectric conversion element using the same, the photoelectric conversion element, and solar cell |
| JP2011216842A (en) * | 2010-03-31 | 2011-10-27 | Samsung Electro-Mechanics Co Ltd | Heat dissipating substrate and method of manufacturing the same |
| WO2015133002A1 (en) * | 2014-03-04 | 2015-09-11 | イビデン株式会社 | Double-layer-coated aluminum base material |
| JP2016125082A (en) * | 2014-12-26 | 2016-07-11 | トヨタ自動車株式会社 | Method for forming thermal barrier film and internal combustion engine |
| JP2017115193A (en) * | 2015-12-22 | 2017-06-29 | アイシン精機株式会社 | Aluminum molding and production method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60225770A (en) * | 1984-04-24 | 1985-11-11 | Seiko Epson Corp | Thernal head |
-
1986
- 1986-08-29 JP JP61201251A patent/JPH0679444B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60225770A (en) * | 1984-04-24 | 1985-11-11 | Seiko Epson Corp | Thernal head |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0279309A (en) * | 1988-09-14 | 1990-03-19 | Sumitomo Electric Ind Ltd | Ceramic insulated wire |
| JPH0282817U (en) * | 1988-12-15 | 1990-06-27 | ||
| JPH02177212A (en) * | 1988-12-28 | 1990-07-10 | Furukawa Electric Co Ltd:The | Heat-proof electric wire and manufacture thereof |
| JP2010258255A (en) * | 2009-04-27 | 2010-11-11 | Fujifilm Corp | Anodic oxidation substrate, method of manufacturing photoelectric conversion element using the same, the photoelectric conversion element, and solar cell |
| JP2011216842A (en) * | 2010-03-31 | 2011-10-27 | Samsung Electro-Mechanics Co Ltd | Heat dissipating substrate and method of manufacturing the same |
| US8338714B2 (en) | 2010-03-31 | 2012-12-25 | Samsung Electro-Mechanics Co., Ltd. | Heat-radiating substrate and manufacturing method thereof |
| WO2015133002A1 (en) * | 2014-03-04 | 2015-09-11 | イビデン株式会社 | Double-layer-coated aluminum base material |
| JP2015166484A (en) * | 2014-03-04 | 2015-09-24 | イビデン株式会社 | Multilayer coating aluminum substrate |
| JP2016125082A (en) * | 2014-12-26 | 2016-07-11 | トヨタ自動車株式会社 | Method for forming thermal barrier film and internal combustion engine |
| JP2017115193A (en) * | 2015-12-22 | 2017-06-29 | アイシン精機株式会社 | Aluminum molding and production method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0679444B2 (en) | 1994-10-05 |
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