JPS6351466U - - Google Patents
Info
- Publication number
- JPS6351466U JPS6351466U JP14671586U JP14671586U JPS6351466U JP S6351466 U JPS6351466 U JP S6351466U JP 14671586 U JP14671586 U JP 14671586U JP 14671586 U JP14671586 U JP 14671586U JP S6351466 U JPS6351466 U JP S6351466U
- Authority
- JP
- Japan
- Prior art keywords
- crystal silicon
- film
- single crystal
- silicon substrate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims 4
- 230000000903 blocking effect Effects 0.000 claims 3
- 230000002265 prevention Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第１図ａ〜ｇは本考案の一実施例を説明するた
めの半導体装置の断面図、第２図ａ，ｂは従来の
半導体装置の断面図である。
１：単結晶シリコン基板、３：厚い絶縁膜、６
：層間絶縁膜、７：薄い絶縁膜、８：薄い絶縁膜
、８ａ：穿孔側壁の絶縁膜、９：非単結晶シリコ
ン薄膜、１０：エネルギービーム，ヒータもしく
はランプによる加熱、１１：単結晶シリコン薄膜
。
1A to 1G are cross-sectional views of a semiconductor device for explaining an embodiment of the present invention, and FIGS. 2A and 2B are cross-sectional views of a conventional semiconductor device. 1: Single crystal silicon substrate, 3: Thick insulating film, 6
: Interlayer insulating film, 7: Thin insulating film, 8: Thin insulating film, 8a: Insulating film on the side wall of the hole, 9: Non-single crystal silicon thin film, 10: Heating by energy beam, heater or lamp, 11: Single crystal silicon thin film .
Claims (1)
、上記回路素子間を単結晶シリコン基板上で電気
的接続する配線と、 上記配線が施された上記基板上を覆う層間絶縁
膜と、 該層間絶縁膜の表面を覆う拡散阻止膜と、 該拡散阻止膜上に被着した単結晶シリコン薄膜
とを備えてなることを特徴とする半導体装置。 (2) 前記層間絶縁膜及び拡散阻止膜は単結晶シ
リコン基板の一部を露出させてなり、単結晶シリ
コン薄膜は上記露出部を介して単結晶シリコン基
板と結合してなることを特徴とする実用新案登録
請求の範囲第１項記載の半導体装置。 (3) 上記拡散阻止膜の少なくとも上記単結晶シ
リコン薄膜との界面がＳｉ３Ｎ４膜であることを
特徴とする実用新案登録請求の範囲第１項記載の
半導体装置。[Claims for Utility Model Registration] (1) A single-crystal silicon substrate on which circuit elements are formed, wiring for electrically connecting the circuit elements on the single-crystal silicon substrate, and a circuit on the substrate on which the wiring is applied. A semiconductor device comprising: a covering interlayer insulating film; a diffusion blocking film covering a surface of the interlayer insulating film; and a single crystal silicon thin film deposited on the diffusion blocking film. (2) The interlayer insulating film and the diffusion prevention film are formed by exposing a part of a single crystal silicon substrate, and the single crystal silicon thin film is bonded to the single crystal silicon substrate through the exposed part. A semiconductor device according to claim 1 of the utility model registration claim. (3) The semiconductor device according to claim 1, wherein at least an interface of the diffusion blocking film with the single crystal silicon thin film is a Si 3 N 4 film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14671586U JPS6351466U (en) | 1986-09-24 | 1986-09-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14671586U JPS6351466U (en) | 1986-09-24 | 1986-09-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6351466U true JPS6351466U (en) | 1988-04-07 |
Family
ID=31059436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14671586U Pending JPS6351466U (en) | 1986-09-24 | 1986-09-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6351466U (en) |
-
1986
- 1986-09-24 JP JP14671586U patent/JPS6351466U/ja active Pending
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