JPS63221656A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS63221656A JPS63221656A JP5570787A JP5570787A JPS63221656A JP S63221656 A JPS63221656 A JP S63221656A JP 5570787 A JP5570787 A JP 5570787A JP 5570787 A JP5570787 A JP 5570787A JP S63221656 A JPS63221656 A JP S63221656A
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- main body
- stress
- terminals
- bent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000005219 brazing Methods 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 13
- 238000005452 bending Methods 0.000 abstract description 12
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 7
- 230000003014 reinforcing effect Effects 0.000 abstract description 2
- 229910000833 kovar Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 2
- 241000218645 Cedrus Species 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置、特にフラット型半導体装置に関す
るものでめる。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, particularly a flat type semiconductor device.
従来、この種の半導体装置においては第6図のように、
本体から水平方向に突出し之、複数個の端子の形は平板
状であシ、前記外部リード端子の容器本体の近傍に1子
折り曲げ部がないのが、一般的であった。従来の半導体
V2C虚の一例を第6図に示す。セラミック材よりなる
半導体装置の本体2と、周囲にNiメッキ、およびAu
メッキを施された平板状コバー材よりなる41゛1の端
子lとは、ろう材2′によシ固着されている。Conventionally, in this type of semiconductor device, as shown in FIG.
Generally, the plurality of terminals protrude horizontally from the main body and have a flat plate shape, and there is no single folded portion of the external lead terminal near the container main body. An example of a conventional semiconductor V2C imaginary is shown in FIG. The main body 2 of the semiconductor device is made of a ceramic material, and the surrounding area is plated with Ni and Au.
A terminal 41'1 made of a plated flat cover material is fixed to a brazing material 2'.
上記半導体装置に2いては、本体から水平方向に突出し
九端子に対し、その面と垂直方向に曲げる力がカロわる
と、本体と端子の接続部に応力が集中し、端子と本体と
の接続部の剥離、めるいは、接続部付近の2けるセラミ
ック部の割れを生じ易い欠点がめっ之。In the above semiconductor device 2, when the force that bends the nine terminals that protrude horizontally from the main body in a direction perpendicular to the surface thereof is exhausted, stress concentrates on the connection between the main body and the terminal, and the connection between the terminal and the main body is The drawback is that the ceramic part tends to peel off, and the ceramic part near the connection part tends to crack.
ま九、端子の厚さが厚くなればなるほど、端子自体によ
る曲は応力の吸収が少なくなる之め、上記不具合を生じ
易くなる傾向がめった。Also, as the thickness of the terminal increases, the stress absorbed by the bending of the terminal itself decreases, so the above-mentioned problems tend to occur more easily.
本発明は、上述の欠点を解決するために、本体から水平
方向に突出した複数個の外部リード端子を持ついわゆる
フラット型の半導体容器において、前記外部リード端子
を容器本体との取付は部近傍かつ、d器本体の外部のみ
折り曲げ、本体に接続することにより、端子接続部分の
み、補強し、端子に加わる曲げ応力の一部を、端子自身
の曲げにより吸収し、本体と端子との接α部には曲げ応
力が加わ58い構造に改善するものである。In order to solve the above-mentioned drawbacks, the present invention provides a so-called flat semiconductor container having a plurality of external lead terminals protruding horizontally from the main body, in which the external lead terminals are attached to the container main body near the By bending only the outside of the main body of the device and connecting it to the main body, only the terminal connecting part is reinforced, a part of the bending stress applied to the terminal is absorbed by bending the terminal itself, and the contact part between the main body and the terminal is strengthened. The structure is improved by adding bending stress to the structure.
次に本発明について、具体的に図面を参照して説明する
。Next, the present invention will be specifically described with reference to the drawings.
第1図は本発明の実施例1の斜視拡大図である。FIG. 1 is an enlarged perspective view of Embodiment 1 of the present invention.
周囲にN、メッキおよびAuメッキを施され九コバー材
よシなる4個の端子lと、セラミック材よシなる半導体
容器本体2とは、ろう材3より固着され、かつ上記端子
1は各々のろう付は部近傍の端子両側面に長刀形折υ曲
げ部4が設けられ、その折り曲げ部は下方に直角に切シ
曲げられて本体と接続されている。The four terminals 1 made of Kubar material with N, N, and Au plating applied to the periphery and the semiconductor container body 2 made of ceramic material are fixed with a brazing material 3, and the terminals 1 are attached to each For brazing, long sword-shaped bent portions 4 are provided on both sides of the terminal near the brazing portion, and the bent portions are bent downward at right angles and connected to the main body.
本例は、両側面に長刀杉折り曲げ部をもうけ。This example has long cedar bends on both sides.
下方に直角に折り曲げた場合を示したが、両・片側、折
す油げ部杉状、上・下折り曲げ方向、折り曲は角度によ
らず、同様の効果が見iΔめるのは言うまでもない。Although we have shown the case of bending downward at right angles, it goes without saying that the same effect can be seen iΔ regardless of the angle of bending, whether it is on both sides or one side, in the cedar-like shape of the oiled part, in the upward or downward direction, or in the bending angle. .
〔実施例2〕
第2囚は、本発明の実施例2の斜視拡大図である。周囲
にNiメッキおよびAuメッキを施されたコバー材より
なる4個の端子lと、セラミック材jニジなる半導体容
器本体2とは、ろう材3よシ固Mされ、かつ、上記)1
子lはモ々のろう付は部近傍の端子片側面に台形折り曲
げ部4がもうけられ、その折9曲げ部は上方に直角に折
り曲げられて本体に接続さスtている。[Example 2] The second case is an enlarged perspective view of Example 2 of the present invention. The four terminals 1 made of a cover material whose periphery is plated with Ni and Au and the semiconductor container body 2 made of a ceramic material are hardened by the brazing material 3, and the above-mentioned) 1
A trapezoidal bent part 4 is formed on one side of the terminal near the brazing part of the terminal, and the bent part 9 is bent upward at a right angle and connected to the main body.
第3図は、不発明の実施例3の斜視拡大図である。周囲
にNiメッキ2よびAuメツ−?を施されたコバー材よ
りなる4個の端子1とセラミック材よりなる半導体容器
2とは、ろう材3よ勺固看され、かつ、上記端子1は、
各々のろう付は部近傍の端子画側に、半回筒形の祈り曲
げ部4が設けられ、その折り曲げ部は本体に後続されて
いる。FIG. 3 is an enlarged perspective view of the third embodiment of the invention. Ni plating 2 and Au plating around? The four terminals 1 made of a coated material and the semiconductor container 2 made of a ceramic material are held together by the brazing material 3, and the terminals 1 are
A semi-cylindrical bent part 4 is provided on the terminal picture side near each brazing part, and the bent part is continued to the main body.
〔実施列4〕 第4図は本発明の実施例4の斜視拡大図でるる。[Implementation row 4] FIG. 4 is an enlarged perspective view of Embodiment 4 of the present invention.
周囲にN、メツギおよびAuメッキを施されたコバー材
よりなる4個の端子lとセラミック材よシなる半導体容
器2とはろう材3よシ固着され、かつ、上記端子lは、
谷々のろう付は部近傍の端子両側に、−万は上方に他方
は下方に、L字型折)曲げ部4が設けらn、その折9曲
げ部は本体に接続されている。Four terminals 1 made of a cover material whose periphery is plated with N, Metsugi, and Au are fixed to a semiconductor container 2 made of a ceramic material through a brazing material 3, and the terminals 1 are
An L-shaped bent part 4 is provided on both sides of the terminal in the vicinity of the brazing part, one above and the other below, and the bent part 4 is connected to the main body.
〔実施例5」 第5図は本発明の実施例5の斜視拡大図である。[Example 5] FIG. 5 is an enlarged perspective view of Embodiment 5 of the present invention.
周囲にNiメッキおLびAuメッキを施されたコバー材
よりなる4個の端子lとセラミック材よシなる半導体容
器2とはろう材3より固着され、かつ、上記端子lは、
各々のろう付は部近傍の端子両側に長万形折り曲げ部4
が設けらn、その折り曲げ部は180@に折り曲げられ
て、本体に接続されている0
〔発明の効果〕
以上説明したように、本発明を採用し、従来の半導体装
置、特にフラット警手導体装置の谷外部す−ド噌子t−
容器本体との取付は部近傍かつ容器本体の外部のみ折9
曲げ、本体に接続し、端子接続部を補強することによシ
、端子自身で曲がりやすくなり、端子に垂直方向に加わ
る応力を吸収し、結果的に、端子と本体との接続部にガ
ロわる応力金@滅する効果が得られる。Four terminals 1 made of a cover material whose peripheries are plated with Ni and L and Au are fixed to a semiconductor container 2 made of a ceramic material with a brazing material 3, and the terminals 1 are
Each brazing section has an oblong bent section 4 on both sides of the terminal near the section.
The bent portion is bent to 180@ and connected to the main body. [Effects of the Invention] As explained above, the present invention is adopted and the bending portion is bent to 180 @ and connected to the main body. Outside the valley of the device
Installation with the container body is done only near the part and outside of the container body.
By bending, connecting to the main body, and reinforcing the terminal connection part, the terminal itself becomes easier to bend, absorbs stress applied to the terminal in the vertical direction, and as a result, the connection part between the terminal and the main body becomes loose. You can get the effect of eliminating stress.
すなわち、従来の半導体装置において、端子に垂直方向
に応力が加わった場合に、上記接続部が剥離したり、セ
ラミック部に割れを生ずるという欠点を無(する効果か
める。That is, it is possible to eliminate the drawbacks of conventional semiconductor devices in which the connection portions peel off or the ceramic portions crack when stress is applied to the terminals in the vertical direction.
第1図は本発明の実施例1の斜視拡大図でめシ、′ig
2図は実施例2の斜視拡大図でめる。第3図は実施例3
の斜視拡大図である。第4図は実施例4の斜視拡大図で
ある。第5図は実施例5の斜視拡大図である。第6図は
従来の半導体装置の例でるる。各図において、
1・・・・・・外部リード端子、2・・・・・・#?導
体谷器(不体)、3・・・・・・ろう材、4・・・・・
・端子折り曲げ部、を示す。
第1図FIG. 1 is an enlarged perspective view of Embodiment 1 of the present invention.
Figure 2 is an enlarged perspective view of Example 2. Figure 3 shows Example 3
FIG. FIG. 4 is an enlarged perspective view of the fourth embodiment. FIG. 5 is an enlarged perspective view of the fifth embodiment. FIG. 6 shows an example of a conventional semiconductor device. In each figure, 1...External lead terminal, 2...#? Conductor valley device (incorporeal), 3... Brazing metal, 4...
・The terminal bending part is shown. Figure 1
Claims (1)
ード端子を持つ、いわゆるフラット型の半導体容器にお
いて、前記外部リード端子を容器本体との取付け部近傍
かつ容器本体の外部のみ折り曲げ、本体に接続すること
により、端子接続部のみを補強させたことを特徴とする
半導体装置。In a so-called flat type semiconductor container having a plurality of external lead terminals protruding horizontally from the semiconductor container main body, the external lead terminals are bent only near the attachment part to the container main body and outside the container main body, and connected to the main body. A semiconductor device characterized in that only the terminal connection portion is reinforced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5570787A JPS63221656A (en) | 1987-03-10 | 1987-03-10 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5570787A JPS63221656A (en) | 1987-03-10 | 1987-03-10 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63221656A true JPS63221656A (en) | 1988-09-14 |
Family
ID=13006355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5570787A Pending JPS63221656A (en) | 1987-03-10 | 1987-03-10 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63221656A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006228661A (en) * | 2005-02-21 | 2006-08-31 | Anzen Dengu Kk | Thermal fuse |
-
1987
- 1987-03-10 JP JP5570787A patent/JPS63221656A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006228661A (en) * | 2005-02-21 | 2006-08-31 | Anzen Dengu Kk | Thermal fuse |
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