JPS63172157U - - Google Patents
Info
- Publication number
- JPS63172157U JPS63172157U JP6439687U JP6439687U JPS63172157U JP S63172157 U JPS63172157 U JP S63172157U JP 6439687 U JP6439687 U JP 6439687U JP 6439687 U JP6439687 U JP 6439687U JP S63172157 U JPS63172157 U JP S63172157U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- conductive layer
- heat dissipation
- optical coupling
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 2
Description
第１図は本考案に係る絶縁型半導体装置の一実
施例の側断面図、第２図は本考案の他の実施例の
側断面図、第３図は従来例の側断面図、第４図は
第３図の構造に基づく、入力側端子と出力側端子
間の静電容量等価回路を示す。
１：放熱用金属板、２：絶縁層、３：導電層、
４：金属ベース基板、５：光結合素子、６：半導
体素子、９：絶縁体、１０：導電層、１１：（第
２の）基板。
FIG. 1 is a side sectional view of one embodiment of an insulated semiconductor device according to the present invention, FIG. 2 is a side sectional view of another embodiment of the present invention, FIG. 3 is a side sectional view of a conventional example, and FIG. The figure shows an equivalent circuit of capacitance between an input terminal and an output terminal based on the structure shown in FIG. 1: Heat dissipation metal plate, 2: Insulating layer, 3: Conductive layer,
4: metal base substrate, 5: optical coupling element, 6: semiconductor element, 9: insulator, 10: conductive layer, 11: (second) substrate.
Claims (1)
有する絶縁型半導体装置において、放熱用金属板
に絶縁層及び導電層を順次積層した第１の基板と
、絶縁体に導電層を形成した第２の基板を備え、
上記第１の基板に上記第２の基板及び上記半導体
素子を載置するとともに、上記第２の基板上に少
なくとも上記光結合素子の入力側端子を設置して
なることを特徴とする絶縁型半導体装置。 An insulated semiconductor device having an optical coupling element and a semiconductor element that requires heat dissipation includes a first substrate in which an insulating layer and a conductive layer are sequentially laminated on a metal plate for heat dissipation, and a second substrate in which a conductive layer is formed on an insulator. Equipped with a board,
An insulated semiconductor, characterized in that the second substrate and the semiconductor element are placed on the first substrate, and at least an input side terminal of the optical coupling device is provided on the second substrate. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6439687U JPS63172157U (en) | 1987-04-28 | 1987-04-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6439687U JPS63172157U (en) | 1987-04-28 | 1987-04-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63172157U true JPS63172157U (en) | 1988-11-09 |
Family
ID=30900514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6439687U Pending JPS63172157U (en) | 1987-04-28 | 1987-04-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63172157U (en) |
-
1987
- 1987-04-28 JP JP6439687U patent/JPS63172157U/ja active Pending
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