JPS6279844A - Gas diffusion plate for fluidized bed synthesizing apparatus - Google Patents
Gas diffusion plate for fluidized bed synthesizing apparatusInfo
- Publication number
- JPS6279844A JPS6279844A JP21913085A JP21913085A JPS6279844A JP S6279844 A JPS6279844 A JP S6279844A JP 21913085 A JP21913085 A JP 21913085A JP 21913085 A JP21913085 A JP 21913085A JP S6279844 A JPS6279844 A JP S6279844A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- flow
- plate
- gas
- fluidized bed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
- B01J8/44—Fluidisation grids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00026—Controlling or regulating the heat exchange system
- B01J2208/00035—Controlling or regulating the heat exchange system involving measured parameters
- B01J2208/00044—Temperature measurement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00106—Controlling the temperature by indirect heat exchange
- B01J2208/00168—Controlling the temperature by indirect heat exchange with heat exchange elements outside the bed of solid particles
- B01J2208/00212—Plates; Jackets; Cylinders
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00389—Controlling the temperature using electric heating or cooling elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00477—Controlling the temperature by thermal insulation means
- B01J2208/00495—Controlling the temperature by thermal insulation means using insulating materials or refractories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/0053—Controlling multiple zones along the direction of flow, e.g. pre-heating and after-cooling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は粉体を合成する流動層合成装置に設けられる
ガス分散板の改良に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to an improvement in a gas distribution plate provided in a fluidized bed synthesis apparatus for synthesizing powder.
【L列1九
流動層方式による合成では、高温の吹き込みガスにより
粉体をすみやかに循環させながら均一に合成させること
が重要な技術となる。[L row 19 In synthesis using the fluidized bed method, an important technique is to uniformly synthesize the powder while rapidly circulating the powder using high-temperature blown gas.
従来の流動層合成装置は第3図に示すような構造である
。すなわち、側壁1の下部には多数の穴2を有するガス
分散板3が設けである。A conventional fluidized bed synthesis apparatus has a structure as shown in FIG. That is, a gas dispersion plate 3 having a large number of holes 2 is provided at the lower part of the side wall 1.
、口がv?しようとする間−筆 ところが、このガス分散板3は平板である。, the mouth is v? While trying - brush However, this gas distribution plate 3 is a flat plate.
たとえば、N2などの吹込みガスを、矢印へ方向にガス
分散板3を介して合成室4内の粉体に吹き込むと、合成
室4の中心部では上背流となり、側壁1付近では下降流
となる。For example, when a blowing gas such as N2 is blown into the powder in the synthesis chamber 4 in the direction of the arrow through the gas distribution plate 3, an upward backflow occurs in the center of the synthesis chamber 4, and a downward flow near the side wall 1. becomes.
このため、側壁1の下部に、粉体がたまり不動部5を形
成しやすく、合成室4の粉体全体が良好に循環しないの
で、均質な品質の合成粉が1nられないという問題があ
る。For this reason, the powder tends to accumulate in the lower part of the side wall 1 to form an immovable part 5, and the powder in the synthesis chamber 4 as a whole does not circulate well, resulting in a problem that synthetic powder of uniform quality cannot be produced.
11悲1几
この発明は上記問題点を解消するためになされたもので
あり、合成室内の粉体全体を良好に循環して均一な合成
粉が得られる流動層合成装置のガス分散板を提供するこ
とを目的とする。11 Tragedy 1 This invention was made to solve the above-mentioned problems, and provides a gas dispersion plate for a fluidized bed synthesis apparatus that can circulate the entire powder in a synthesis chamber well and obtain a uniform synthetic powder. The purpose is to
発明の要旨
この目的を達成するためにこの発明は、シリカ還元法窒
化ケイ素粉末の流動層方式製造装置において中央部が厚
く、周辺部が薄くなり山形になっている流動層合成装置
のガス分散板を要旨としている。SUMMARY OF THE INVENTION To achieve this object, the present invention provides a gas dispersion plate for a fluidized bed synthesis apparatus in which the central part is thick and the peripheral part is thin and mountain-shaped in a fluidized bed production apparatus for producing silicon nitride powder using a silica reduction method. The gist is:
げ4題ζを ゛するノこめの二;
ガス分散板7は、中央部が厚く中央部8に山頂つがあり
、周辺部10が薄くなり山形になっている。Part 2 of Question 4: The gas distribution plate 7 is thick in the center and has a peak at the center 8, and the peripheral part 10 is thin and has a mountain shape.
f ITI
ガス分散板7から噴出するガスの噴出力は、周辺部10
はど強く、第1図の矢印方向に粉体の循l〒流を生じる
。したがって、側壁6の下部の粉体12は、容易に移動
するので不動部を形成しない。また、ガス分散板7に傾
斜があるため、合成室13の下部の粉体12は、その傾
斜に沿う流れが生じ、かつその流れと反対方向の循環流
Bがあるので、循環流により上昇し、粉体12の不動部
を生じない。f ITI The ejection force of the gas ejected from the gas distribution plate 7 is
This causes a strong circulation of powder in the direction of the arrow in Figure 1. Therefore, the powder 12 at the bottom of the side wall 6 moves easily and does not form an immovable part. Furthermore, since the gas distribution plate 7 has an inclination, the powder 12 in the lower part of the synthesis chamber 13 will flow along the inclination, and since there is a circulation flow B in the opposite direction to the flow, the powder 12 will rise due to the circulation flow. , no immobile part of the powder 12 occurs.
実」1当−
第1図の6は、合成層の側壁である。この側壁6の下部
にはガス分散板7が装着しである。Reference numeral 6 in FIG. 1 is the side wall of the composite layer. A gas distribution plate 7 is attached to the lower part of this side wall 6.
ガス分散板7は第2図に示ずような山形形状である。ず
なわら、中央部8が厚く中央部8に山頂9があり、その
周辺部10は薄くなっている。ガス分散板7は、高さ方
向に多数の穴11が形成されている。このガス分散板7
の傾斜角度θは10〜50’の範囲になっている。The gas distribution plate 7 has a chevron shape as shown in FIG. However, the central part 8 is thick and has a peak 9, and the peripheral part 10 is thin. The gas distribution plate 7 has a large number of holes 11 formed in the height direction. This gas distribution plate 7
The inclination angle θ is in the range of 10 to 50'.
使用に際しては、原料としてたとえば造粒体になったシ
リカ・カーボン・窒化ケイ素の粉体12を合成室13に
入れて図示しない熱源でたとえば1400℃に加熱する
。そして、矢印へで示すようにたとえば高温のN2ガス
を、カス分散板7の穴11を介して合成室13内に吹込
めばよい。In use, as a raw material, for example, granulated silica/carbon/silicon nitride powder 12 is placed in a synthesis chamber 13 and heated to, for example, 1400° C. by a heat source (not shown). Then, for example, high-temperature N2 gas may be blown into the synthesis chamber 13 through the hole 11 of the waste dispersion plate 7 as shown by the arrow.
このときの粉体12の循環流の方向は、第1図の矢印の
ようになる。ガス分散板7から噴出するガスの噴出力は
、穴11の長さが短い周辺部10はど強くなる。したが
って側壁6の下部の粉体12は容易に移動する。粉体仝
休の動きは、合成室13の中央部8では−F背流、側壁
6の付近は下降流となるが、不動部がないため全体の動
きは速やかである。The direction of the circulating flow of the powder 12 at this time is as shown by the arrow in FIG. The ejection force of the gas ejected from the gas distribution plate 7 is stronger in the peripheral portion 10 where the length of the hole 11 is shorter. Therefore, the powder 12 at the bottom of the side wall 6 moves easily. The movement of the powder is a -F backflow in the center 8 of the synthesis chamber 13 and a downward flow near the side wall 6, but the overall movement is rapid because there are no stationary parts.
またガス分散板7に傾斜があるため合成室13の下部の
粉体はその傾斜に沿う流れが生じ、かつその流れと反対
方向の循環流Bがあるので、循環流により上背し不動部
を生じさせない。Furthermore, since the gas distribution plate 7 has an inclination, the powder in the lower part of the synthesis chamber 13 flows along the inclination, and since there is a circulating flow B in the opposite direction to that flow, the circulating flow moves the upper back and the immovable part. Don't let it happen.
ところで、ガス分散板7の傾斜角度Oが10°より小さ
いと、中央部8と周辺部10のガス噴出力の差が現れな
い。また、上)ホのよう/2傾斜に沿う粉体の流れが生
じないため、不動部を解消する効果がない。By the way, if the inclination angle O of the gas distribution plate 7 is smaller than 10°, no difference in gas ejection force between the central portion 8 and the peripheral portion 10 will appear. In addition, since the powder does not flow along the slope shown in (E) above, there is no effect of eliminating the immobile part.
また、傾斜角度θが50°より大きいと、穴11の長さ
が長くなわずぎ、中央部8のガス噴出力がなくなり、粉
体13の全体の循環流が生じ難くなる。Moreover, when the inclination angle θ is larger than 50°, the length of the hole 11 becomes long and the gas jetting force of the central portion 8 is lost, making it difficult to generate a circulating flow of the powder 13 as a whole.
なお、この発明は上述した実施例のみに限定されるもの
ではない。Note that this invention is not limited to the above-described embodiments.
発明の詳細
な説明したようにこの発明によれば、粉体全体が良好に
循環し均一な合成粉が得られる。As described in detail, according to the present invention, the entire powder is circulated well and a uniform synthetic powder can be obtained.
第1図(よこの発明のガス分散板の一実施例を右する流
動層合成装置を示1面図、第2図はガス分散板の斜視図
、第3図は従来のガス分散板を有する流動層合成装置を
示す断面図である。
6、、、、、、側壁
7、、、、、、ガス分散板
8、、、、、、中央部
9、、、、、、頂上
10、、、、、周辺部
11、、、、、穴
12、、、、、粉体
13、、、、、合成室
第1図
第2図
第3図Fig. 1 is a front view showing a fluidized bed synthesis apparatus showing an embodiment of the gas dispersion plate of the present invention, Fig. 2 is a perspective view of the gas dispersion plate, and Fig. 3 is a diagram showing a conventional gas dispersion plate. It is a cross-sectional view showing a fluidized bed synthesis apparatus. ,,peripheral part 11,,,,hole 12,,,,powder 13,,,,synthesis chamber Fig. 1 Fig. 2 Fig. 3
Claims (2)
置において中央部が厚く、周辺部が薄くなり山形になっ
ている流動層合成装置のガス分散板。(1) A gas dispersion plate for a fluidized bed synthesis device that is thick at the center and thin at the periphery to form a mountain shape in a fluidized bed manufacturing device for silicon nitride powder using the silica reduction method.
1項に記載の流動層合成装置のガス分散板。(2) The gas distribution plate of the fluidized bed synthesis apparatus according to claim 1, wherein the inclination angle is 10 to 50 degrees.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21913085A JPH0246256B2 (en) | 1985-10-03 | 1985-10-03 | RYUDOSOGOSEISOCHINOGASUBUNSANBAN |
US06/838,566 US4640023A (en) | 1985-07-05 | 1986-03-11 | Apparatus for manufacturing powdered silicon nitride |
DE19863608972 DE3608972A1 (en) | 1985-07-05 | 1986-03-18 | DEVICE FOR PRODUCING PULVERIZED SILICON NITRIDS |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21913085A JPH0246256B2 (en) | 1985-10-03 | 1985-10-03 | RYUDOSOGOSEISOCHINOGASUBUNSANBAN |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6279844A true JPS6279844A (en) | 1987-04-13 |
JPH0246256B2 JPH0246256B2 (en) | 1990-10-15 |
Family
ID=16730707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21913085A Expired - Lifetime JPH0246256B2 (en) | 1985-07-05 | 1985-10-03 | RYUDOSOGOSEISOCHINOGASUBUNSANBAN |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0246256B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140129641A (en) * | 2013-04-30 | 2014-11-07 | 주식회사 엘지화학 | Fluidized bed reactor and process for manufacturing carbon nanostructures using same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04191971A (en) * | 1990-11-26 | 1992-07-10 | Hitachi Ltd | Method and device for text display |
-
1985
- 1985-10-03 JP JP21913085A patent/JPH0246256B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140129641A (en) * | 2013-04-30 | 2014-11-07 | 주식회사 엘지화학 | Fluidized bed reactor and process for manufacturing carbon nanostructures using same |
Also Published As
Publication number | Publication date |
---|---|
JPH0246256B2 (en) | 1990-10-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |