JPS6276529U - - Google Patents
Info
- Publication number
- JPS6276529U JPS6276529U JP16666585U JP16666585U JPS6276529U JP S6276529 U JPS6276529 U JP S6276529U JP 16666585 U JP16666585 U JP 16666585U JP 16666585 U JP16666585 U JP 16666585U JP S6276529 U JPS6276529 U JP S6276529U
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- gas flow
- reactor
- gas outflow
- pressure cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims 3
- 239000012495 reaction gas Substances 0.000 claims 1
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の減圧ＣＶＤ装置の一実施例の
説明図、第２図は同装置の別の実施例の説明図、
第３図は従来の減圧ＣＶＤ装置の説明図である。 １…反応炉、２…ヒータ、３…ボート、４…ウ
エハ、５…ノズル、５ａ１〜５ａｎ，５ａ…ガス
流出用の穴。
説明図、第２図は同装置の別の実施例の説明図、
第３図は従来の減圧ＣＶＤ装置の説明図である。 １…反応炉、２…ヒータ、３…ボート、４…ウ
エハ、５…ノズル、５ａ１〜５ａｎ，５ａ…ガス
流出用の穴。
Claims (1)
- 複数のガス流出穴を有するノズルを反応炉内に
ガス流方向に沿つて設けて、該ノズルからの反応
用ガス流出量を、上記反応炉におけるガス流の下
流側を上流側よりも多くしたことを特徴とする減
圧ＣＶＤ装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16666585U JPS6276529U (ja) | 1985-10-31 | 1985-10-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16666585U JPS6276529U (ja) | 1985-10-31 | 1985-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6276529U true JPS6276529U (ja) | 1987-05-16 |
Family
ID=31097859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16666585U Pending JPS6276529U (ja) | 1985-10-31 | 1985-10-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6276529U (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01109714A (ja) * | 1987-10-22 | 1989-04-26 | Nec Corp | 気相成長装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6021528A (ja) * | 1983-07-15 | 1985-02-02 | Hitachi Ltd | プラズマ気相反応装置 |
| JPS6063368A (ja) * | 1983-09-14 | 1985-04-11 | Hitachi Ltd | 膜形成装置 |
-
1985
- 1985-10-31 JP JP16666585U patent/JPS6276529U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6021528A (ja) * | 1983-07-15 | 1985-02-02 | Hitachi Ltd | プラズマ気相反応装置 |
| JPS6063368A (ja) * | 1983-09-14 | 1985-04-11 | Hitachi Ltd | 膜形成装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01109714A (ja) * | 1987-10-22 | 1989-04-26 | Nec Corp | 気相成長装置 |