JPS6238034B2 - - Google Patents
Info
- Publication number
- JPS6238034B2 JPS6238034B2 JP10250680A JP10250680A JPS6238034B2 JP S6238034 B2 JPS6238034 B2 JP S6238034B2 JP 10250680 A JP10250680 A JP 10250680A JP 10250680 A JP10250680 A JP 10250680A JP S6238034 B2 JPS6238034 B2 JP S6238034B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chemical solution
- porous material
- nozzle
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 29
- 239000000126 substance Substances 0.000 claims description 19
- 239000011148 porous material Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 description 10
- 239000007788 liquid Substances 0.000 description 7
- 238000011282 treatment Methods 0.000 description 6
- 239000007921 spray Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Coating Apparatus (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Nozzles (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
本発明は、ウエツト処理装置、更に詳しくはホ
トエツチング技術のうち、特に基板表面に薬液を
供給する工程に用いるウエツト処理装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wet processing apparatus, and more particularly to a wet processing apparatus used in photoetching technology, particularly in the step of supplying a chemical solution to a substrate surface.
従来、基板表面のウエツト処理の方法として、
第1図に示すように基板1を入れたカセツト2を
薬液3が満たされた処理槽4に浸すデイツプ方式
と、第2図および第3図に示すように基板1を真
空チヤツク5に吸着保持し回転させながら、第2
図のようにノズル6により霧状になつた薬液3を
吹き付けるスプレー方式と、第3図のように一端
7aが閉じられた中空パイプのノズル7をほぼ基
板1と平行に配設し、底面に設けた多数の小穴7
bより薬液を滴下するシヤワー方式とが知られて
いる。 Conventionally, as a method for wet treatment of the substrate surface,
As shown in FIG. 1, there is a dip method in which a cassette 2 containing a substrate 1 is immersed in a processing tank 4 filled with a chemical solution 3, and as shown in FIGS. 2 and 3, a vacuum chuck 5 holds the substrate 1 by suction. While rotating,
As shown in the figure, there is a spray method in which the atomized chemical solution 3 is sprayed by a nozzle 6, and a nozzle 7, which is a hollow pipe with one end 7a closed as shown in FIG. Many small holes 7
A shower method is known in which a chemical solution is dripped from b.
しかしながら、これらの方式はいずれも一長一
短を有する。すなわち、デイツプ方式は基板表面
に機械的強度の弱い物質の膜が形成されている場
合のウエツト処理、例えばポジのホトレジスト膜
の現像の場合、レジストの表面に機械的ダメージ
を与えずに高品質に現像できる利点を持つ。その
反面、基板表面に新しい液が供給されないので、
異物が付着する。また生産の連続化、自動化が困
難であるなどの欠点を有する。これに対し、スプ
レー方式およびシヤワー方式は生産の連続化を容
易に実現でき、常に新しい薬液が基板表面に供給
できる利点を有するが、例えばポジのホトレジス
トのように機械強度の弱い膜の現像の場合、レジ
スト膜の表面を機械的に破壊してしまい、品質を
悪くする欠点を有している。更にスプレー方式の
場合、薬液のミストが基板周囲の装置の壁に付着
し、凝結して基板上にボタ落ちし、製品を不良に
する欠点も有している。 However, each of these methods has advantages and disadvantages. In other words, the dip method is suitable for wet processing when a film of a substance with low mechanical strength is formed on the substrate surface, such as when developing a positive photoresist film, to achieve high quality without mechanically damaging the resist surface. It has the advantage of being developable. On the other hand, since new liquid is not supplied to the substrate surface,
Foreign matter adheres. It also has drawbacks such as difficulty in continuous production and automation. On the other hand, the spray method and shower method have the advantage of easily realizing continuous production and constantly supplying new chemical solution to the substrate surface, but for example, when developing a film with weak mechanical strength such as positive photoresist. However, the surface of the resist film is mechanically destroyed, resulting in poor quality. Furthermore, the spray method has the disadvantage that the chemical mist adheres to the walls of the device around the substrate, condenses, and drips onto the substrate, resulting in defective products.
本発明は前記スプレー方式の欠点を解消したウ
エツト処理装置を提供することを目的とする。 SUMMARY OF THE INVENTION An object of the present invention is to provide a wet treatment apparatus that eliminates the drawbacks of the spray method.
以下、本発明を図示の実施例により説明する。
第4図は本発明になるウエツト処理装置の一実施
例を示す。同図に示すように、基板1は真空チヤ
ツク5に吸着保持されて回転させられ、また基板
1の上方に基板1と平行に一端8aが閉じられた
中空パイプのノズル本体8が配設されている点は
従来と同じである。 Hereinafter, the present invention will be explained with reference to illustrated embodiments.
FIG. 4 shows an embodiment of the wet treatment apparatus according to the present invention. As shown in the figure, the substrate 1 is held by a vacuum chuck 5 and rotated, and a nozzle body 8, which is a hollow pipe with one end 8a closed, is disposed above the substrate 1 and parallel to the substrate 1. This is the same as before.
本発明においては、前記ノズル本体8は第5図
に示すように下面にスリツト8bが設けられてお
り、このスリツト8bを覆うように下面に多孔質
材料9が溶接などにより固定されている。ここ
で、前記ノズル本体8の材料としてはステンレス
鋼、石英ガラスあるいはテフロンなどを用い、ま
た多孔質材料9としてはステンレス鋼、パイレツ
クス、テフロンなどの焼結材を用いる。 In the present invention, the nozzle body 8 is provided with a slit 8b on the lower surface as shown in FIG. 5, and a porous material 9 is fixed to the lower surface by welding or the like so as to cover the slit 8b. Here, the material of the nozzle body 8 is stainless steel, quartz glass, Teflon, etc., and the porous material 9 is a sintered material such as stainless steel, Pyrex, Teflon, etc.
次にかかる構成よりなる装置の作用について説
明する。ノズル本体8に設けられた多孔質材料9
を基板1に近接(数mm程度離す)して配設し、真
空チヤツク5を約100r.p.mの低速で回転させな
がらノズル本体8の薬液供給口8cより薬液3を
ノズル本体8に供給する。これにより、薬液3は
スリツト8bより多孔質材料9に流入し、これよ
り基板1上に流出する。さて、基板1は低速で回
転し、かつ多孔質材料9は基板1に近接して配設
されているので、多孔質材料9より流出した薬液
3は表面張力で基板1に付着し、基板1全面にレ
ンズ状に盛り上つた薬液の液膜が形成されてウエ
ツト処理が行なわれる。この場合、基板1へ供給
され古くなつた薬液3は遠心力により基板1の外
に排出され、基板上に形成された薬液の膜は常に
新しい液で穏やかに置換される。また、基板1へ
の薬液3の供給は吐出口が多孔質よりなる多孔質
材料9により行なわれるので、ノズル全面から穏
やかににじみ出るように均一に常に新しい液に置
換されて行なわれる。このため、基板上に形成さ
れた機械強度の弱い膜も破壊されることもなく、
また従来のように凝結した薬液が基板上にボタ落
ちすることもないので、高品質のウエツト処理が
行なわれる。 Next, the operation of the device having such a configuration will be explained. Porous material 9 provided in nozzle body 8
is disposed close to the substrate 1 (a distance of about several mm), and the chemical solution 3 is supplied to the nozzle body 8 from the chemical solution supply port 8c of the nozzle body 8 while rotating the vacuum chuck 5 at a low speed of about 100 rpm. As a result, the chemical solution 3 flows into the porous material 9 through the slit 8b, and flows out onto the substrate 1 from there. Now, since the substrate 1 rotates at a low speed and the porous material 9 is disposed close to the substrate 1, the chemical solution 3 flowing out from the porous material 9 adheres to the substrate 1 due to surface tension, and the substrate 1 Wet processing is performed by forming a lens-shaped liquid film of the chemical liquid on the entire surface. In this case, the old chemical solution 3 supplied to the substrate 1 is discharged from the substrate 1 by centrifugal force, and the chemical solution film formed on the substrate is always gently replaced with a new solution. Furthermore, since the chemical liquid 3 is supplied to the substrate 1 through a porous material 9 having a porous discharge port, the chemical liquid 3 is constantly replaced with a new liquid uniformly so that it oozes gently from the entire surface of the nozzle. Therefore, even the film with weak mechanical strength formed on the substrate will not be destroyed.
Furthermore, since condensed chemical liquid does not drip onto the substrate as in the conventional method, high-quality wet processing can be performed.
なお、上記実施例においては、ホトレジストの
現像の場合について説明したが、他のウエツト処
理例えばエツチング、染色、水洗等にも同様に適
用できることは勿論である。 In the above embodiments, the case of photoresist development has been described, but it goes without saying that the present invention can be similarly applied to other wet treatments such as etching, dyeing, washing, etc.
以上の説明から明らかな如く、本発明になるウ
エツト処理装置によれば、機械強度の弱い膜が形
成された基板表面に対し、高品質なウエツト処理
ができる。 As is clear from the above description, according to the wet processing apparatus of the present invention, high quality wet processing can be performed on the surface of a substrate on which a film with low mechanical strength is formed.
第1図、第2図、第3図は従来のウエツト処理
装置を示し、第1図はデイツプ方式の断面図、第
2図はスプレー方式の斜視図、第3図はシヤワー
方式の斜視図、第4図は本発明になるウエツト処
理装置の一実施例を示し、aは正面図、bはaの
A−A線断面拡大図、第5図は第4図のノズルを
示し、aは一部切欠き正面図、bはaのB−B線
断面図である。
1……基板、3……薬液、5……真空チヤツ
ク、8……ノズル本体、9……多孔質材料。
Figures 1, 2, and 3 show conventional wet treatment equipment, with Figure 1 being a sectional view of the dip type, Figure 2 being a perspective view of the spray type, and Figure 3 being a perspective view of the shower type. FIG. 4 shows an embodiment of the wet treatment apparatus according to the present invention, in which a is a front view, b is an enlarged cross-sectional view taken along line A-A of a, and FIG. 5 is a nozzle shown in FIG. Part cutaway front view, b is a sectional view taken along the line B-B of a. DESCRIPTION OF SYMBOLS 1... Substrate, 3... Chemical solution, 5... Vacuum chuck, 8... Nozzle body, 9... Porous material.
Claims (1)
上に薬液を供給するノズルとを備えたウエツト処
理装置において、前記ノズルの吐出口は多孔質材
料よりなることを特徴とするウエツト処理装置。1. A wet processing apparatus comprising a substrate holding means for holding and rotating a substrate, and a nozzle for supplying a chemical onto the substrate, wherein a discharge port of the nozzle is made of a porous material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10250680A JPS5727168A (en) | 1980-07-28 | 1980-07-28 | Equipment for wet treatment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10250680A JPS5727168A (en) | 1980-07-28 | 1980-07-28 | Equipment for wet treatment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5727168A JPS5727168A (en) | 1982-02-13 |
JPS6238034B2 true JPS6238034B2 (en) | 1987-08-15 |
Family
ID=14329278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10250680A Granted JPS5727168A (en) | 1980-07-28 | 1980-07-28 | Equipment for wet treatment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5727168A (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57192955A (en) * | 1981-05-25 | 1982-11-27 | Toppan Printing Co Ltd | Developing method |
US4838289A (en) * | 1982-08-03 | 1989-06-13 | Texas Instruments Incorporated | Apparatus and method for edge cleaning |
JPS59112872A (en) * | 1982-12-16 | 1984-06-29 | Matsushita Electric Ind Co Ltd | Rotary coater |
JPS59145525A (en) * | 1983-02-09 | 1984-08-21 | Matsushita Electronics Corp | Resist development |
JPS59154361U (en) * | 1983-04-04 | 1984-10-16 | 三菱レイヨン株式会社 | Coating device |
JPS61104825A (en) * | 1984-10-29 | 1986-05-23 | Akira Nakajima | Device for integrating continuous plastic filament |
JPS63260040A (en) * | 1987-04-16 | 1988-10-27 | Yamaguchi Nippon Denki Kk | Fixing of semiconductor element |
JPH01253235A (en) * | 1988-03-31 | 1989-10-09 | Sigma Gijutsu Kogyo Kk | Method and device for substrate treatment |
JP3910151B2 (en) | 2003-04-01 | 2007-04-25 | 東京エレクトロン株式会社 | Heat treatment method and heat treatment apparatus |
JP5760439B2 (en) * | 2010-12-28 | 2015-08-12 | Tdk株式会社 | Slurry supply device and coating device |
-
1980
- 1980-07-28 JP JP10250680A patent/JPS5727168A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5727168A (en) | 1982-02-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6199562B1 (en) | Method and apparatus for cleaning a dispense line | |
JPS6238034B2 (en) | ||
JPH04154122A (en) | Apparatus and method for treatment of substrate | |
US6495215B1 (en) | Method and apparatus for processing substrate | |
JPS6088944A (en) | Resist film developing method | |
JP2507966B2 (en) | Coating device | |
JP4232336B2 (en) | Semiconductor wafer surface treatment method | |
JPH0517700B2 (en) | ||
JPS5836679A (en) | Wet treatment | |
JPH0554187B2 (en) | ||
EP0887710B1 (en) | Resist development process | |
JPH02133916A (en) | Resist coating apparatus | |
JP2941085B2 (en) | Photoresist developing method and developing apparatus | |
JPS58184725A (en) | Resist applying apparatus for semiconductor substrate | |
JPS6161416A (en) | Semiconductor manufacturing device | |
JPH03256321A (en) | Resist film forming apparatus | |
KR100322685B1 (en) | Spin coater | |
JPH021298B2 (en) | ||
JP2002190465A (en) | Method and apparatus for surface-treatment of semiconductor wafer | |
JPS6241792B2 (en) | ||
JPS60127730A (en) | Manufacturing apparatus of semiconductor device | |
JPH0562960A (en) | Liquid processing tank and device | |
JPS6198351A (en) | Surface treatment method | |
JPS63310117A (en) | Developing device for semiconductor manufacture | |
JPH0786231A (en) | Thin film etching method |