[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS6233762A - Vacuum deposition device - Google Patents

Vacuum deposition device

Info

Publication number
JPS6233762A
JPS6233762A JP17173685A JP17173685A JPS6233762A JP S6233762 A JPS6233762 A JP S6233762A JP 17173685 A JP17173685 A JP 17173685A JP 17173685 A JP17173685 A JP 17173685A JP S6233762 A JPS6233762 A JP S6233762A
Authority
JP
Japan
Prior art keywords
vapor deposition
molten
crucible
deposition material
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17173685A
Other languages
Japanese (ja)
Inventor
Yukishige Jinno
神野 幸重
Nobuyuki Hiraishi
平石 信行
Yasuo Iwabori
岩堀 泰男
Michio Ogami
大上 三千男
Michinori Katahira
片平 道則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP17173685A priority Critical patent/JPS6233762A/en
Publication of JPS6233762A publication Critical patent/JPS6233762A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To simplify the mechanism of a vacuum deposition device and to reduce the size of a vacuum vessel by continuously supplying a molten vapor deposition material through a transport pipe by a differential pressure from a reservoir part installed to the atm. side to a crucible for vapor deposition disposed in the vacuum vessel. CONSTITUTION:This vapor deposition device is constituted by supplying the molten vapor deposition material 1A obtd. by heating and melting the vapor deposition material 1 in the reservoir part 2 installed to the atm. side to the crucible 3 for vapor deposition disposed in the vacuum vessel 6 having a vacuum evacuation device 7 through the transport pipe 4 and further evaporating the same by heating to deposit the material by evaporation on a substrate 9 on a substrate holder 8. The molten vapor deposition material 1A in the reservoir part 2 of the above-mentioned device is continuously supplied to the crucible 3 by the differential pressure P0-P1 between the atm. pressure P0 and the pressure P1 in the crucible. The pressure is preferably balanced at all times in such a manner as to maintain P0-P1=DELTAP+rhoDELTAH as the fluid resistance DELTAP of the molten vapor deposition material 1A in the transport pipe 4, the head difference DELTAH between the crucible 3 and the reservoir part 2 and the density rhoof the material 1A.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は半導体製造等に利用される真空蒸着装置に係り
、特に湯だめ部から蒸着用ルツボへの溶融蒸着物質の供
給方式に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a vacuum evaporation apparatus used in semiconductor manufacturing and the like, and particularly to a method of supplying a molten evaporation material from a molten sump to a evaporation crucible.

〔発明の背景〕[Background of the invention]

従来の真空蒸着装置は、例えば実公昭56−23329
号に記載された内容から刺断して、蒸着物質を加熱、溶
融してその溶融蒸着物質をためる湯だめ部および溶融蒸
着物質を蒸着用ルツボへ輸送する輸送管が前記ルツボと
共に同一の真空槽内に収納されていると推定される。
Conventional vacuum evaporation equipment is, for example, disclosed in Japanese Utility Model Publication No. 56-23329.
A sump section for heating and melting the vapor deposition material and storing the molten vapor deposition material, and a transport pipe for transporting the molten vapor deposition material to the vapor deposition crucible are in the same vacuum tank as the crucible. It is assumed that it is stored inside.

しかるに、この真空蒸着装置においては、溶融蒸着物質
を連続的に供給する装置を真空槽内に組み込む必要があ
り、真空シールの問題等からメカニズムが複雑となり、
かつ真空槽もそれに伴なって大型化するという問題があ
る。
However, in this vacuum evaporation apparatus, it is necessary to incorporate a device for continuously supplying the molten evaporation material into the vacuum chamber, which complicates the mechanism due to problems such as vacuum sealing.
Additionally, there is a problem in that the vacuum chamber also increases in size.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、連続供給装置を必要とすることなく溶
融蒸着物質を連続して蒸着用ルツボへ供給できて、メカ
ニズムの簡素化および真空槽の小型化を図ることができ
る真空蒸着装置を提供することにある。
An object of the present invention is to provide a vacuum evaporation device that can continuously supply a molten evaporation material to a evaporation crucible without requiring a continuous supply device, simplifying the mechanism and downsizing the vacuum chamber. It's about doing.

また、本発明の目的は、溶融蒸着物質をより精度高く連
続的に供給することが可能な真空蒸着装置を提供するこ
とにある。
Another object of the present invention is to provide a vacuum evaporation apparatus that can continuously supply a molten evaporation substance with higher accuracy.

〔発明の概要〕[Summary of the invention]

本発明は、蒸着物質を加熱、溶融してその溶融蒸着物質
をためる湯だめ部と、その湯だめ部がら輸送管を通して
輸送される溶融蒸着物質を更に加熱して蒸発させる蒸着
用ルツボとを備え、前記ルツボ内の溶融蒸着物質を真空
槽内で蒸発させて基板等に蒸着させるようにして成る真
空蒸着装置において、前記湯だめ部を大気側に設置し、
大気圧力とルツボ内圧力との差圧により湯だめ部内の溶
融蒸着物質を真空槽内のルツボへ供給するようにして、
連続供給装置を必要とすることなく溶融蒸着物質の連続
供給を可能とし、メカニズムの簡素化および真空槽の小
型化を図ったものである。
The present invention includes a sump for heating and melting a evaporation material and storing the molten evaporation material, and a evaporation crucible for further heating and evaporating the molten evaporation material transported from the sump through a transport pipe. , in a vacuum evaporation apparatus configured to evaporate a molten deposition material in the crucible in a vacuum chamber and deposit it on a substrate, etc., the molten metal sump is installed on the atmosphere side;
The molten vapor deposition material in the molten metal tank is supplied to the crucible in the vacuum chamber by the differential pressure between the atmospheric pressure and the pressure inside the crucible,
This makes it possible to continuously supply the molten vapor deposition material without requiring a continuous supply device, simplifying the mechanism and downsizing the vacuum chamber.

また、本発明は、湯だめ部を大気側に設置する一方、大
気圧力P O、ルツボ内圧力P6、輸送管における溶融
蒸着物質の流動抵抗ΔP、ルツボと湯だめ部とのヘッド
差ΔH1溶融蒸着物質の密度ρとした場合、 Po  P1=ΔP+ρ・ΔH の関係式を常に満足させる圧力バランス手段を輸送管の
途中または湯だめ部に設けることにより、溶融蒸着物質
をより精度高く連続的に供給できるようにしたものであ
る。
Further, in the present invention, while the molten metal sump is installed on the atmospheric side, atmospheric pressure P O, crucible internal pressure P6, flow resistance ΔP of the molten vapor deposition material in the transport pipe, head difference ΔH1 between the crucible and the molten evaporation When the density of the substance is ρ, by providing a pressure balance means that always satisfies the relational expression Po P1 = ΔP + ρ・ΔH in the middle of the transport pipe or in the sump, it is possible to continuously supply the molten vapor deposition material with higher precision. This is how it was done.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を第1図により説明する。図は
本発明による真空蒸着装置の構成図を示し、1は棒状、
綿状、ペレット状あるいはボタン状の蒸着物質、2は蒸
着物質1を加熱、溶融しその溶融蒸着物質lAをためる
湯だめ部、3は湯だめ部2内から輸送管4を通して輸送
される溶融蒸着物質IAを更に加熱して蒸発させる蒸着
用のルツボ、5は湯だめ部2、輸送管4およびルツボ3
内の溶融蒸着物flAを加熱する加熱体、6は蒸着を行
わすための真空槽、7は真空槽6内を真空にするための
真空排気装置、8は真空槽6内において基板9を取付け
るための基板ホルダである。
An embodiment of the present invention will be described below with reference to FIG. The figure shows a configuration diagram of a vacuum evaporation apparatus according to the present invention, in which 1 is a rod-shaped;
A vapor deposition material in the form of cotton, pellets, or buttons; 2 is a sump for heating and melting the evaporation material 1 and storing the molten evaporation material IA; 3 is a molten vapor deposition material transported from the sump 2 through a transport pipe 4; A crucible for vapor deposition to further heat and evaporate substance IA;
6 is a vacuum chamber for performing vapor deposition; 7 is a vacuum evacuation device for evacuating the inside of vacuum chamber 6; 8 is for mounting a substrate 9 in vacuum chamber 6; This is a substrate holder for.

しかして、本発明による真空蒸着装置は、前記湯だめ部
2を大気側に設置した構成となっている。
Thus, the vacuum evaporation apparatus according to the present invention has a configuration in which the hot water reservoir 2 is installed on the atmosphere side.

次に本実施例の作用について説明する。大気中において
湯だめ部2に連続的に供給される蒸着物質lは加熱体5
により加熱されて溶融状態となる。
Next, the operation of this embodiment will be explained. The vapor deposition material l continuously supplied to the sump 2 in the atmosphere is heated by the heating element 5.
It is heated to a molten state.

この溶融蒸着物flAは、大気圧力P0とルツボ内圧力
P+  (PI <P(1)の圧力差により輸送管4を
流動して真空槽6内のルツボ3に供給される。
This molten deposit flA flows through the transport pipe 4 due to the pressure difference between the atmospheric pressure P0 and the crucible internal pressure P+ (PI < P(1)) and is supplied to the crucible 3 in the vacuum chamber 6.

該ルツボ3に供給された溶融蒸着物質IAは更に加熱さ
れて蒸発し、基板ホルダ8に保持されている基板9に蒸
着される。尚、図中P2は真空槽6内の圧力を示し、P
2 <PIの関係となっている。
The molten deposition material IA supplied to the crucible 3 is further heated and evaporated, and is deposited on the substrate 9 held by the substrate holder 8. In addition, P2 in the figure indicates the pressure inside the vacuum chamber 6, and P2
2 The relationship is <PI.

従って、本実施例においては、大気圧力P0とルツボ内
圧力P1との圧力差により溶融蒸着物質IAの連続供給
を行えるので、従来のような連続供給装置を真空槽内に
組込む必要がなくなり、メカニズムの簡素化および真空
槽の小型化が可能となる。
Therefore, in this embodiment, the molten deposition material IA can be continuously supplied by the pressure difference between the atmospheric pressure P0 and the crucible internal pressure P1, so there is no need to incorporate a conventional continuous supply device into the vacuum chamber, and the mechanism This makes it possible to simplify the process and downsize the vacuum chamber.

また、前述の蒸着作用が行われている状態において、大
気圧力PO%ルツボ内圧力P1%輸送管における溶融蒸
着物質の流動抵抗ΔP、ルツボと湯だめ部とのヘッド差
ΔH,溶融蒸着物質の密度ρとした時、 Pa  PI=ΔP+ρ・ΔH・・・・・・川・・・(
1)の関係式を常に満足させる圧力バランス手段を輸送
管4の途中または湯だめ部2側に設ければ、溶融蒸着物
質IAをより精度高く連続的に供給することが可能とな
る。
In addition, in the state where the above-mentioned evaporation action is being performed, atmospheric pressure PO% crucible internal pressure P1% flow resistance ΔP of the molten evaporation material in the transport pipe, head difference ΔH between the crucible and the sump, density of the molten evaporation material When ρ, Pa PI = ΔP + ρ・ΔH... River... (
If a pressure balance means that always satisfies the relational expression 1) is provided in the middle of the transport pipe 4 or on the side of the sump 2, it becomes possible to continuously supply the molten vapor deposition substance IA with higher precision.

次に前記圧力バランス手段を設けた実施例を第2図、第
3図により説明する。
Next, an embodiment in which the pressure balance means is provided will be described with reference to FIGS. 2 and 3.

第2図は圧力バランス手段を輸送管の途中に設けた場合
の真空蒸着装置の構成図を示し、輸送管4の途中に圧力
コントロール室10を設け、かつ圧力コントロール室1
0内の圧力をコントロールする、圧力コントローラ11
を設けた構成となっている。
FIG. 2 shows a configuration diagram of a vacuum evaporation apparatus in which a pressure balance means is provided in the middle of the transport pipe, and a pressure control chamber 10 is provided in the middle of the transport pipe 4.
Pressure controller 11 that controls the pressure within 0
It is configured with the following.

尚、図中第1図と同一符号のものは同じものを示してい
る。  ・ この実施例において、前記圧力コントロール室10内の
圧力P1、圧力コントロール室10の湯面と湯だめ部2
内の場面とのヘッド差ΔH′、ルツボ3内の場面と圧力
コントロール室10の場面とのヘッド差ΔH″、湯だめ
部2と圧力コントロール室10との間の輸送管4におけ
る溶融蒸着物質の流動抵抗ΔP′、圧力コントロール室
10とルツボ3との間の輸送管4における溶融蒸着物質
の流動抵抗ΔP#とした場合、これらの圧力関係は(2
)式、(3)式で示される。
In the figure, the same reference numerals as in FIG. 1 indicate the same things. - In this embodiment, the pressure P1 in the pressure control chamber 10, the hot water level in the pressure control chamber 10, and the hot water reservoir 2
The head difference ΔH′ between the scene inside the crucible 3 and the scene inside the pressure control chamber 10, the head difference ΔH″ between the scene inside the crucible 3 and the scene inside the pressure control chamber 10, and the head difference ΔH″ between the scene inside the crucible 3 and the scene inside the pressure control chamber 10, When the flow resistance ΔP′ and the flow resistance ΔP# of the molten vapor deposition material in the transport pipe 4 between the pressure control chamber 10 and the crucible 3 are assumed, the pressure relationship between these is (2
) and (3).

Pa   P3=Δp’+p・ΔH’  −98,−+
2)Ps   P1=ΔP#+ρ・ΔH“ ・・・・・
・(3)従って、圧力コントロール室10内の圧力P、
を制御することにより、溶融蒸着物質の連続供給をより
精度高く行うことが可能となる。
Pa P3=Δp'+p・ΔH' -98,-+
2) Ps P1=ΔP#+ρ・ΔH" ・・・・・・
(3) Therefore, the pressure P in the pressure control chamber 10,
By controlling this, it becomes possible to continuously supply the molten vapor deposition material with higher precision.

第3図は圧力バランス手段を湯だめ部側に設けた場合の
真空蒸着装置の構成図を示し、12は湯だめ部2の周り
に設けた圧力コントロール室、13は圧力コントロール
室12内の圧力P4を変化させることなく該圧力コント
ロール室12内に蒸着物質1を装填するためのロードロ
ツタ室、14は圧力コントロール室12とロードロック
室13との間に設けられた仕切弁、15はロードロック
室13を大気と連通、遮断する仕切弁、16は圧力コン
トロール室12の圧力P4をコントロールする圧力コン
トローラ、17はロードロック室13内の圧力P5をコ
ントロールする圧力コントローラである。
FIG. 3 shows a configuration diagram of a vacuum evaporation apparatus in which a pressure balance means is provided on the side of the hot water reservoir, in which 12 is a pressure control chamber provided around the hot water reservoir 2, and 13 is the pressure inside the pressure control chamber 12. A load rotor chamber for loading the vapor deposition substance 1 into the pressure control chamber 12 without changing P4, 14 a gate valve provided between the pressure control chamber 12 and the load lock chamber 13, 15 a load lock chamber 13 is a gate valve that communicates with and shuts off the atmosphere; 16 is a pressure controller that controls the pressure P4 in the pressure control chamber 12; and 17 is a pressure controller that controls the pressure P5 in the load lock chamber 13.

この真空蒸着装置において、蒸着物質lは大気状態にあ
るロードロック室13内へ仕切弁15を介して挿入され
る。そして、ロードロック室13内の圧力P、が圧カコ
ントロール室12内の圧力P4と等しくされ、圧力コン
トロール室12内の、前工程にて使用した蒸着物質lが
全て溶融された時、ロードロック室13内に挿入した前
記蒸着物質を仕切弁14を介して圧力コントロール室1
2内へ装填する。
In this vacuum evaporation apparatus, a evaporation substance 1 is inserted into a load lock chamber 13 in an atmospheric state via a gate valve 15. Then, when the pressure P in the load lock chamber 13 is made equal to the pressure P4 in the pressure control chamber 12 and all the vapor deposition material l used in the previous process in the pressure control chamber 12 is melted, the load lock is applied. The vapor deposition material inserted into the chamber 13 is transferred to the pressure control chamber 1 through the gate valve 14.
Load into 2.

従って、本実施例においても、湯だめ部2周りの圧力P
4を制御することにより、溶融蒸着物質の連続供給をよ
り精度高く行うことができる。
Therefore, in this embodiment as well, the pressure P around the hot water tank 2
By controlling 4, the continuous supply of the molten vapor deposition material can be performed with higher precision.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によれば、連続供給装置を
必要とすることなく溶融蒸着物質を蒸着用ルツボへ連続
して供給できるので、メカニズムの簡素化および真空槽
の小型化を図ることができる。また、本発明によれば、
溶融蒸着物質をより精度高く連続的に供給することがで
きる。
As explained above, according to the present invention, the molten vapor deposition material can be continuously supplied to the vapor deposition crucible without the need for a continuous supply device, so it is possible to simplify the mechanism and downsize the vacuum chamber. can. Further, according to the present invention,
The molten deposition material can be continuously supplied with higher accuracy.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の真空蒸着装置の一実施例を示す構成図
、第2図および第3図は他の発明の真空蒸着装置の実施
例を示す構成図である。 1・・・蒸着物質、IA・・・溶融蒸着物質、2・・・
湯だめ部、3・・・蒸着用ルツボ、4・・・輸送管、5
・・・加熱体、6・・・真空槽、10.12・・・圧力
コントロール室、11、16.17・・・圧力コントロ
ーラ、13・・・ロードロック室 代理人 弁理士  秋 本 正 実 第7図 第2図
FIG. 1 is a block diagram showing one embodiment of the vacuum evaporation apparatus of the present invention, and FIGS. 2 and 3 are block diagrams showing embodiments of the vacuum evaporation apparatus of other inventions. 1... Vapor deposition substance, IA... Melted vapor deposition substance, 2...
Hot water reservoir part, 3... Crucible for vapor deposition, 4... Transport pipe, 5
... Heating body, 6 ... Vacuum chamber, 10.12 ... Pressure control room, 11, 16.17 ... Pressure controller, 13 ... Load lock room agent Patent attorney Masashi Akimoto Figure 7Figure 2

Claims (1)

【特許請求の範囲】 1、蒸着物質を加熱、溶融してその溶融蒸着物質をため
る湯だめ部と、その湯だめ部から輸送管を通して輸送さ
れる溶融蒸着物質を更に加熱して蒸発させる蒸着用ルツ
ボとを備え、前記ルツボ内の溶融蒸着物質を真空槽内で
蒸発させて基板等に蒸着させるようにして成る真空蒸着
装置において、前記湯だめ部を大気側に設置し、大気圧
力とルツボ内圧力との差圧により湯だめ部内の溶融蒸着
物質を真空槽内のルツボへ連続的に供給するようにした
ことを特徴とする真空蒸着装置。 2、蒸着物質を加熱、溶融してその溶融蒸着物質をため
る湯だめ部と、その湯だめ部から輸送管を通して輸送さ
れる溶融蒸着物質を更に加熱して蒸発させる蒸着用ルツ
ボとを備え、前記ルツボ内の溶融蒸着物質を真空槽内で
蒸発させて基板等に蒸着させるようにして成る真空蒸着
装置において、前記湯だめ部を大気側に設置し、大気圧
力P_0、ルツボ内圧力P1、輸送管における溶融蒸着
物質の流動抵抗ΔP、ルツボと湯だめ部とのヘッド差Δ
H、溶融蒸着物質の密度ρとした場合、 P_0−P_1=ΔP+ρ・ΔH の関係式を常に満足させる圧力バランス手段を輸送管の
途中または湯だめ部に設け、湯だめ部内の溶融蒸着物質
を真空槽内のルツボへ連続的に供給するようにしたこと
を特徴とする真空蒸着装置。
[Scope of Claims] 1. A sump for heating and melting a vapor deposition material and storing the molten vapor deposition material, and a vapor deposition device for further heating and evaporating the molten vapor deposition material transported from the sump through a transport pipe. In the vacuum evaporation apparatus, the molten vapor deposition material in the crucible is evaporated in a vacuum chamber and is deposited on a substrate, etc. 1. A vacuum evaporation apparatus characterized in that a molten evaporation substance in a sump is continuously supplied to a crucible in a vacuum chamber by a pressure difference between the molten metal and the molten metal. 2. A vapor deposition crucible that further heats and evaporates the molten vapor deposition material transported from the bath through a transport pipe, comprising a sump for heating and melting a vapor deposition material and storing the molten vapor deposition material; In a vacuum evaporation apparatus configured to evaporate a molten deposition material in a crucible in a vacuum chamber and deposit it on a substrate, etc., the molten sump is installed on the atmospheric side, atmospheric pressure P_0, crucible internal pressure P1, and a transport pipe. Flow resistance ΔP of the molten vapor deposited material at , head difference Δ between the crucible and the sump
When H is the density of the molten vapor deposited material, ρ, a pressure balance means that always satisfies the relational expression P_0-P_1=ΔP+ρ・ΔH is installed in the middle of the transport pipe or in the sump, and the molten evaporated material in the sump is evacuated. A vacuum evaporation device characterized by continuous supply to a crucible in a tank.
JP17173685A 1985-08-06 1985-08-06 Vacuum deposition device Pending JPS6233762A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17173685A JPS6233762A (en) 1985-08-06 1985-08-06 Vacuum deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17173685A JPS6233762A (en) 1985-08-06 1985-08-06 Vacuum deposition device

Publications (1)

Publication Number Publication Date
JPS6233762A true JPS6233762A (en) 1987-02-13

Family

ID=15928728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17173685A Pending JPS6233762A (en) 1985-08-06 1985-08-06 Vacuum deposition device

Country Status (1)

Country Link
JP (1) JPS6233762A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01234560A (en) * 1988-03-11 1989-09-19 Ulvac Corp Method and device for supplying low-melting-point material to be vaporized in vapor deposition apparatus
JP2008500454A (en) * 2004-05-27 2008-01-10 ズィードラーベ インコーポレイテッド Vacuum deposition method and apparatus by evaporation of metal and alloy
JP2012525499A (en) * 2009-04-27 2012-10-22 エスエヌユー プレシジョン カンパニー リミテッド Raw material supply unit, thin film deposition apparatus and thin film deposition method
WO2019234398A1 (en) * 2018-06-04 2019-12-12 Dyson Technology Limited A vapour deposition evaporator device
WO2019234395A1 (en) * 2018-06-04 2019-12-12 Dyson Technology Limited A vapour deposition evaporator device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01234560A (en) * 1988-03-11 1989-09-19 Ulvac Corp Method and device for supplying low-melting-point material to be vaporized in vapor deposition apparatus
JP2008500454A (en) * 2004-05-27 2008-01-10 ズィードラーベ インコーポレイテッド Vacuum deposition method and apparatus by evaporation of metal and alloy
JP2012525499A (en) * 2009-04-27 2012-10-22 エスエヌユー プレシジョン カンパニー リミテッド Raw material supply unit, thin film deposition apparatus and thin film deposition method
WO2019234398A1 (en) * 2018-06-04 2019-12-12 Dyson Technology Limited A vapour deposition evaporator device
WO2019234395A1 (en) * 2018-06-04 2019-12-12 Dyson Technology Limited A vapour deposition evaporator device
US11613804B2 (en) 2018-06-04 2023-03-28 Dyson Technology Limited Vapour deposition evaporator device

Similar Documents

Publication Publication Date Title
KR20090074064A (en) Vacuum coating method, and arrangement for carrying out said method
JPS6233762A (en) Vacuum deposition device
KR100287978B1 (en) MG evaporation method with increased evaporation rate
JPH02118064A (en) Vacuum deposition device
KR101149450B1 (en) Deposition source, film forming apparatus and film forming method
JPS63243264A (en) Apparatus for producing thin film
JP2004111787A (en) Substrate processing apparatus
US5542979A (en) Apparatus for producing thin film
JPH0927455A (en) Manufacture of semiconductor substrate and material gas supplying apparatus
US3155310A (en) Method of producting a vacuum
JPH027395B2 (en)
JP2003013233A (en) Device for vaporizing/feeding liquid raw material
JPH02307892A (en) Method and device for producing thin film
JP3576490B2 (en) Metal gas generator
JPS6240427B2 (en)
JPH0273960A (en) Vacuum deposition device
JP2005129782A (en) Substrate treatment apparatus
JPS6386861A (en) Replenishing device for vapor deposition material
CA1221232A (en) Vacuum vapor deposition system
JP4067792B2 (en) Manufacturing method of semiconductor device
DE102018004987B4 (en) Method and device for providing steam
GB2265390A (en) Bubblers for use in vapour phase deposition
JPS57138059A (en) Manufacture for magnetic recording medium
JPH03232530A (en) Internal diffusion thin film type getter material
JPH01208456A (en) Method for changing electron gun in vacuum vessel