JPS62102518A - Manufacture of shroud for semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To obtain a shroud of light weight, good heat conductivity and good anti-corrosion by forming a film which has the resistance against corrosion of gallium inside a cylinder for the shroud made of Al. CONSTITUTION:A cylinder which has a space for cooling fluid flow in the circumferential wall for a shroud made of Al is made. Then, a film which has the resistance against the corrosion by gallium is formed by ion-plating on at least the inner surface of both the inner and the outer surfaces of the cylinder. The cylinder for the shroud has a spiral pipe for cooling fluid flow made of Al connected to the outside of the Al cylinder or an Al plate which has a pipe-like swelling for cooling fluid flow, is made cylinder-shaped and the projection is connected, etc. This can provide the shroud of light weight, good heat conductivity and good anti-corrosion.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method for manufacturing a shroud used in an apparatus for manufacturing a film-like semiconductor containing Ga.

In this Mei@JX iJ3, the edict ``aluminum'' includes not only pure aluminum but also aluminum alloys.

Conventional technology and its problemsWhen manufacturing semiconductor films containing Ga, such as GaAS, using semiconductor manufacturing equipment such as MBC equipment, it is necessary to form the film in an ultra-high vacuum in order to obtain higher performance. This is an essential condition. Therefore, a shroud is used in the film forming chamber of the MBE apparatus. A conventional shroud has a cylindrical shape made of a stainless steel plate, and a stainless steel tube is spirally wound around the outer circumferential surface of the shroud, and a cold fluid such as liquid nitrogen flows through the tube. When forming the semiconductor film, first the shroud is
After performing a baking process by heating to 0 to 250°C to remove moisture adsorbed on the surface of the shroud, a cooling fluid is flowed into the stainless steel tube, and the shroud is cooled by this cooling fluid, and the shroud is coated on its surface. It adsorbs residual gas in the evacuated film forming chamber to create an ultra-high vacuum. However, in conventional shrouds, the cylinder body and tube are made of stainless steel, so they are heavy and
Moreover, there was a problem that the thermal conductivity was not sufficient. If the thermal conductivity is not sufficient, it will take time for the entire shroud to be heated evenly during the baking process, and
There was a problem in that it took time for the surface of the shroud to cool down to a predetermined temperature when the cooling fluid was flowing.

Therefore, it has been considered to make the shroud from aluminum, which has a smaller @ than stainless steel, has better thermal conductivity, and has a smaller surface gas release coefficient.
The reality is that a shroud made of aluminum has not yet been realized because aluminum is attacked by Ga evaporated during film formation and a through hole is generated.

An object of the present invention is to provide a method for manufacturing a shroud for semiconductor manufacturing equipment that solves the above problems.

Means for Solving the Problems In the method of manufacturing a shroud for semiconductor manufacturing equipment according to the present invention, after an aluminum shroud cylinder having a cooling fluid circulation portion on the peripheral wall is manufactured, at least the inner surface of the inside and outside surfaces of the cylinder is manufactured. , by ion plating method,
It is characterized by forming a film having corrosion resistance against gallium.

In the above, the shroud cylindrical body may be one in which an aluminum cooling fluid distribution tube is spirally wound and bonded to the outer peripheral surface of an aluminum tube, or a cooling fluid distribution tube such as a roll bond panel. There is a method in which an aluminum plate-like body with a bulge is formed into a cylindrical shape, and the butt portions are joined together.

In addition, in the above, films having corrosion resistance against gallium include TiN, TiC, AI N, AI C,
Examples include AI203. Films made of TIN and All'N are formed by ion plating using N2 gas as a reactive gas and Ti or AI as an evaporated metal. TiC and A
A film made of IC is formed by ion plating using acetylene as a reactive gas and Li or AI as an evaporated metal. A/2
The film made of 03 is formed by ion plating using an oxygen-containing gas as a reactive gas and Al as an evaporated metal. The thickness of such a film is preferably within the range of 1 to 20 mm. The reason for this is that if the film thickness is less than 11U11, the Ga
If the corrosion resistance exceeds 20tIII, the processing time required for ion plating may increase, leading to a high loss. This is because there is a risk that cracks may occur in the film or the film may peel off. The film thickness is controlled by controlling the ion plating processing time, the flow rate and velocity of the reactive gas, the blackening rate, and the like.

Ion plating on at least the inner surface of both the inner and outer surfaces of the shroud cylinder is performed by placing the cylinder in a treatment tank and using it as a cathode.

Example Examples of the present invention will be shown below along with comparative examples.

Example 1 First, a cylindrical body for a shroud having a cooling fluid circulation portion on the peripheral wall was made from an aluminum material. Next, after sputter cleaning this shroud cylinder, ion plating was performed using N2 gas J3 as a reactive gas and Ti as an evaporated metal, and a TiN film with a thickness of 5p was applied to both the inside and outside of the main body and lid. A film was formed.

In the above, the pressure of N2 gas during ion plating is 1 torr, and the temperature of the main body and lid is 200 torr.
It was kept at ℃. Then, G on the inner surface of the shroud cylinder.
After depositing No. 19 of a, a thermal cycle test of heating at 200° C. for 24 hours and then cooling with liquid nitrogen for 30 minutes was repeated for 6 cycles to examine the corrosivity caused by Ga. As a result of Ij2 inspection of both the inner and outer surfaces of the cylinder, no corrosion by Ga was observed.

Example 2 An A/N film with a film thickness of 10 μm was formed on both the inner and outer surfaces of the shroud cylinder in the same manner as in Example 1, except that A/ was used as the evaporated metal during ion plating, and the same procedure as described above was carried out. The corrosion caused by Ga was investigated in the same manner as in Example 1. As a result, no corrosion by Ga was observed on both the inner and outer surfaces of the shroud cylinder.

Example 3 Using acetylene as the reactive gas during ion plating, a TiC film with a thickness of 10 mm was formed on both the inner and outer surfaces of the shroud cylinder in the same manner as in Example 1 above.
Similarly to Example 1 above, corrosion due to Ga was investigated.

As a result, no corrosion by Ga was observed on both the inner and outer surfaces of the shroud cylinder.

Example 4 A ΔlC film with a thickness of 8 μm was formed on both the inner and outer surfaces of the shroud cylinder in the same manner as in Example 3, except that A/ was used as the evaporated metal during ion plating, and in the same manner as in Example 1. Its corrosion resistance was also investigated in the same manner. As a result, no corrosion by Ga was observed on both the inner and outer surfaces of the shroud cylinder.

Example 5 A/ as the evaporated metal during ion plating,
A film thickness of 10 tvtt was applied to both the inner and outer surfaces of the shroud cylinder in the same manner as in Example 1 except that 02 was used as the reactive gas.
An A/203 film was formed, and corrosion by Ga was examined in the same manner as in Example 1 above. As a result, no corrosion by Ga was observed on both the inner and outer surfaces of the shroud solid.

Comparative Example First, a cylindrical body for a shroud having a cooling fluid circulation portion on the peripheral wall was made from an aluminum material. After depositing 1 g of Ga on both the inner and outer surfaces of the shroud cylinder,
A thermal cycle test of heating for 24 hours and then cooling for 30 minutes with liquid dipping was repeated for 6 cycles to examine the corrosivity caused by Qa. As a result of observing both the inner and outer surfaces of the cylinder, corrosion by Ga was observed.

Effects of the Invention In the method of manufacturing a shroud for semiconductor manufacturing equipment according to the present invention, after making an aluminum shroud cylinder having a cooling fluid circulation part on the peripheral wall, at least the inner surface of both the inner and outer surfaces of the shroud is coated by an ion plating method. Since it is characterized by forming a film that is resistant to corrosion against gallium, it is lighter in a than those made of conventional stainless steel, has good thermal conductivity, and has good corrosion resistance against gallium. A shroud equivalent to that made of stainless steel W4 can be easily manufactured. In particular, since it has excellent thermal conductivity, it is possible to shorten the baking treatment time during semiconductor film formation compared to conventional products, and it is also possible to reduce the time required for baking when forming a semiconductor film. Cooling efficiency is improved, and residual gas adsorption rate during semiconductor film formation is improved.

Furthermore, since the shroud cylinder is made from aluminum, it is easier to process than when it is made from stainless steel.

In addition, since the film is formed using the ion plating method, moisture is not adsorbed to this layer when the film is formed, and when using a shroud manufactured by this method in an MBE device, etc. It is sufficient to perform a baking process, which has been conventionally performed when forming a semiconductor film.

In addition, since the film is formed using the ion plating method, this film has excellent thermal cycle properties.
Even if heating to about 250° C. for the purpose of degassing and cooling with liquid nitrogen during semiconductor film formation are repeated, no peeling or cracking occurs in the film.

In general, since aluminum has a smaller gas release coefficient than stainless steel, there is less risk of lowering the degree of vacuum in the semiconductor film deposition chamber in the MBE apparatus.

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Claims (1)

[Claims] After producing an aluminum shroud cylinder having a cooling fluid circulation part on the peripheral wall, a film having corrosion resistance against gallium is formed on at least the inner surface of both the inner and outer surfaces thereof by an ion plating method. Method for manufacturing a shroud for semiconductor manufacturing equipment