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JPS62104127A - Insulating wire bonding method - Google Patents

Insulating wire bonding method

Info

Publication number
JPS62104127A
JPS62104127A JP60244310A JP24431085A JPS62104127A JP S62104127 A JPS62104127 A JP S62104127A JP 60244310 A JP60244310 A JP 60244310A JP 24431085 A JP24431085 A JP 24431085A JP S62104127 A JPS62104127 A JP S62104127A
Authority
JP
Japan
Prior art keywords
bonding
tool
bonding tool
insulated wire
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60244310A
Other languages
Japanese (ja)
Inventor
Masayoshi Yamaguchi
政義 山口
Michinaru Yonezawa
米沢　通考
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60244310A priority Critical patent/JPS62104127A/en
Publication of JPS62104127A publication Critical patent/JPS62104127A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
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    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the capillary or wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
    • H01L2224/78621—Holding means, e.g. wire clampers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H01L2224/85207—Thermosonic bonding

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To perform bonding under the best state, by heating a bonding tool with a heating means, thereby fusing or evaporating an insulating material completely. CONSTITUTION:An insulating material 2g of an insulating wire 2 is fused or evaporated to the insulating wire 2, which is protruded from a tip 5a of a bonding tool 5, with an electric torch, and a ball state 2B is formed. Then, an upper clamper 3 is closed and a lower clamper 4 is opened. Under this state, the bonding tool 5 is lowered, and the formed ball state 2B is attached to the tip 5a of the bonding tool 5. Ball bonding is performed to a pellet 9 together with ultrasonic wave thermal compression. Since the bonding tool 5 is always heated with a tool heater 6, the higher effect of diffusion or evaporation can be expected in forming the ball state 2B by the diffusion or the evaporation of the insulating material 2g of the insulating wire 2.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体装置の組立て工程におけるペレットと
リード端子との間等を絶縁ワイヤによりボンディングす
る絶縁ワイヤボンディング方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an insulated wire bonding method for bonding between a pellet and a lead terminal using an insulated wire in the assembly process of a semiconductor device.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

従来、半導体装置の組立て工程におけるペレットとリー
ド端子との間のボンディングは、絶縁体の被覆されてい
ない裸のワイヤにより行っている。Conventionally, bonding between pellets and lead terminals in the process of assembling semiconductor devices has been performed using bare wires that are not covered with an insulator.

したがって、ワイヤが隣接する別のワイヤと接触したり
、又ボンディングする所定位置とは別位置に接触してし
まうことが起こることがある。これでは、不良の半導体
素子を作製してしまうので、近年絶縁ワイヤを用いてボ
ンディングすることが考えられている。しかし、このボ
ンディング方法は今だ実験的レベルであって、実際には
実用化されていないのが実情である。このことは次のよ
うな事からその実現が困難となっている。すなわち、先
ず、ボンディングを行う場合、ペレット側からポールボ
ンディングするが、これは絶縁ワイヤを熱によりボール
状に形成してワイヤをペレットに接合する工程である。Therefore, the wire may come into contact with another adjacent wire, or may come into contact with another wire at a position other than the predetermined position for bonding. Since this results in the production of defective semiconductor elements, in recent years it has been considered to use insulated wires for bonding. However, this bonding method is still at an experimental level and has not actually been put into practical use. This is difficult to achieve due to the following reasons. That is, first, when bonding is performed, pole bonding is performed from the pellet side, and this is a process in which an insulated wire is formed into a ball shape by heat and the wire is bonded to the pellet.

しかし、このときに絶縁物が完全に溶解又は蒸発せずに
ボール表面にその炭化物が付着してしまうため、接合面
に悪影響を与えてしまい接合力が弱くなり最良のボンデ
ィングができなくなってしまう。次にリード端子側でウ
ェッジボンディングするが、この際も絶縁物が完全に溶
解又は蒸発せずに最良のボンディングができずにその接
合力が弱いものとなってしまう。この結果、半導体製造
工程における品質低下および歩留低下を招いてしまう。However, at this time, the insulator is not completely melted or evaporated and its carbide adheres to the ball surface, which adversely affects the bonding surface and weakens the bonding force, making it impossible to achieve the best bonding. Next, wedge bonding is performed on the lead terminal side, but at this time as well, the insulator does not completely melt or evaporate, making it impossible to achieve the best possible bonding and resulting in a weak bonding force. As a result, quality and yield decreases in the semiconductor manufacturing process.

〔発明の目的〕[Purpose of the invention]

本発明は上記実情に基づいてなされたもので、その目的
とするところは、絶縁物を完全に溶解又は蒸発させて最
良の状態にボンディングできる絶縁ワイーヤボンディン
グ方法を提供することにある。The present invention has been made based on the above-mentioned circumstances, and an object thereof is to provide an insulated wire bonding method that can completely melt or evaporate the insulator and bond in the best condition.

〔発明の概要〕[Summary of the invention]

本発明は、被ワイヤボンディング部へのボンディング時
、加熱手段によりボンディングツールを加熱して絶縁ワ
イヤの絶縁物を溶解又は蒸発させてボンディングを行う
絶縁ワイヤボンディング方法である。The present invention is an insulated wire bonding method that performs bonding by heating a bonding tool using a heating means to melt or evaporate the insulator of the insulated wire when bonding to a wire-bonded portion.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例について第１図ないし第３図に
示すボンディング工程を参照して説明する。各図におい
て１は絶縁ワイヤ２を巻回しであるリールである。そし
て、このリール１から絶縁ワイヤ２が上クランパ３およ
び下クランパ４を介してボンディングツール５に送られ
ている。なお、絶縁ワイヤ２の径は３０μ程度である。An embodiment of the present invention will be described below with reference to the bonding process shown in FIGS. 1 to 3. In each figure, 1 is a reel around which an insulated wire 2 is wound. Then, an insulated wire 2 is sent from this reel 1 to a bonding tool 5 via an upper clamper 3 and a lower clamper 4. Note that the diameter of the insulated wire 2 is approximately 30μ.

そして、上クランパ３および下クランパ４は、絶縁ワイ
ヤ２をボンディング動作に合せてボンディングツール５
に順次法る機能を持ったもので、絶縁ワイヤ２を送る場
合上クランパ３を１９程度のクランプ力で閉じたまま、
超音波ホーン７と連動して矢印（ロ）の如く上下動する
下クランパ４を開いてボンディングツール５を取付けで
ある超音波ホーン７を下降させる。Then, the upper clamper 3 and the lower clamper 4 move the insulated wire 2 to the bonding tool 5 in accordance with the bonding operation.
It has the function of sequentially folding the insulated wire 2, and when feeding the insulated wire 2, the upper clamper 3 is closed with a clamping force of about 19.
The lower clamper 4, which moves up and down as shown by the arrow (b) in conjunction with the ultrasonic horn 7, is opened to lower the ultrasonic horn 7 on which the bonding tool 5 is attached.

さて、ボンディングツール５には、その周囲にツールヒ
ータ６が形成されている。このツールヒータ６は絶縁ワ
イヤ２の絶縁物２Ｑを溶解又は蒸発させる温度例えば１
５０〜２５０℃に常時加熱させるもので、この温度は絶
縁物２Ｑの被覆厚さおよび絶縁物２Ｑの材質等に応じて
決定される。又、このボンディングツール５には、超音
波ホーン７が設けられ、これにより矢印（イ）方向に１
μの範囲で周波数５８ｋＨＺ〜６０ｋＨＺの超音波によ
り１！動するような構成となっている。なお、８はフレ
ームであり、このフレーム８上にペレット９およびリー
ド端子１０が形成されている。Now, a tool heater 6 is formed around the bonding tool 5. This tool heater 6 is heated to a temperature of, for example, 1 to melt or evaporate the insulator 2Q of the insulated wire 2.
It is constantly heated to 50 to 250°C, and this temperature is determined depending on the coating thickness of the insulator 2Q, the material of the insulator 2Q, etc. Further, this bonding tool 5 is provided with an ultrasonic horn 7, which allows it to move 1 in the direction of the arrow (A).
1 by ultrasonic waves with a frequency of 58kHz to 60kHz in the μ range! It is configured to move. In addition, 8 is a frame, and the pellet 9 and the lead terminal 10 are formed on this frame 8.

次にボンディング工程について説明する。先ず、ボンデ
ィングツール５の先＠５ａから突出している絶縁ワイヤ
２に電気トーチ（不図示）で絶縁ワイヤ２の絶縁物２ａ
を溶解又は蒸発させて、ボール状２Ｂを形成する。次に
上クランパ３を閉じ下クランパ４を開いたまま、ボンデ
ィングツール５を下降させて形成されたボール状２Ｂを
ボンディングツール５の先！５ａにくいつかして第２図
に示すようにペレット９に超音波熱圧着併用でボールボ
ンディングを行う。ボンディングツール５はツールヒー
タ６により常時加熱されているので、絶縁ワイヤ２の絶
縁物２ａ溶解又は蒸発してボール状２Ｂを形成するのに
より一層の溶解又は蒸発の効果か期待できる。Next, the bonding process will be explained. First, the insulated wire 2 protruding from the tip @5a of the bonding tool 5 is exposed to the insulator 2a of the insulated wire 2 using an electric torch (not shown).
is dissolved or evaporated to form ball-shaped 2B. Next, with the upper clamper 3 closed and the lower clamper 4 open, the bonding tool 5 is lowered and the formed ball shape 2B is placed at the tip of the bonding tool 5! 5a, and as shown in FIG. 2, ball bonding is performed on the pellet 9 using ultrasonic thermocompression bonding. Since the bonding tool 5 is constantly heated by the tool heater 6, it can be expected that the insulator 2a of the insulated wire 2 will melt or evaporate to form the ball shape 2B, resulting in a further melting or evaporation effect.

このようにポールボンディングが終了すると、ボンディ
ングツール５が矢印（ハ）に示す如く上方に移動しなが
らボンディングヘッド（不図示）が搭載されているＸ−
Ｙテーブル（不図示）もＸ。When the pole bonding is completed in this way, the bonding tool 5 moves upward as shown by the arrow (c) and moves to the
The Y table (not shown) is also X.

Ｙ方向に移動して第３図に示すようにリード端子１０上
に位置してウェッジボンディングが行なわれる。つまり
、このときボンディングツール５は、ツールヒータ６に
より加熱されるとともに超音波ホーン７により矢印（イ
）方向に振動している。Wedge bonding is performed by moving in the Y direction and positioning the lead terminal 10 as shown in FIG. That is, at this time, the bonding tool 5 is heated by the tool heater 6 and is vibrated by the ultrasonic horn 7 in the direction of arrow (A).

したがって、絶縁ワイヤ２とリード端子１０との間にＩ
ＩＪｉｍ熱が発生し、この摩擦熱とツールヒータ６の加
熱と、さらにフレーム８を暖めるヒータ（不図示）の加
熱との合成熱により絶縁ワイヤ２の絶縁物２ａが溶解又
は蒸発する。かくして、ワイヤがリード端子１０に金属
接合され、この結果、ペレット９とリード端子１０間の
ボンディングが終了する。そうして、次のペレットとリ
ード端子間のボンディングが行なわれる。Therefore, I
IJim heat is generated, and the insulator 2a of the insulated wire 2 melts or evaporates due to the combined heat of this frictional heat, the heating of the tool heater 6, and the heating of a heater (not shown) that warms the frame 8. In this way, the wire is metallurgically bonded to the lead terminal 10, and as a result, the bonding between the pellet 9 and the lead terminal 10 is completed. Bonding is then performed between the next pellet and the lead terminal.

このように上記一実施例においては、ペレット９へのボ
ンディング時、ツールヒータ６により加熱されたボンデ
ィングツール５に高周波の縦振動を励振させ、フレーム
８を暖めるヒータの加熱との合成熱で炭化物を付着させ
ないように接合させ、またリード端子１０へのボンディ
ングはツールヒータ６による加熱およびボンディングツ
ールの高周波数の縦振動による摩擦熱さらにフレーム８
を暖めるヒータの加熱との合成熱により絶縁物２ａを溶
解又は蒸発させてボンディングを行うようにしたので、
ボンディングを行うとき絶縁ワイヤ２の絶縁物２ａを確
実に溶解又は蒸発することができて接合面に炭化物を付
着させることがない。したがって、ボンディングが最良
の状態にできて、例えば半導体製品の品質向上および製
品製造工程での歩留を向上できる。In this way, in the above embodiment, when bonding to the pellet 9, high-frequency longitudinal vibration is excited in the bonding tool 5 heated by the tool heater 6, and the carbide is heated by the combined heat with the heating of the heater that warms the frame 8. Bonding to the lead terminal 10 is performed using heating by the tool heater 6 and frictional heat due to high-frequency longitudinal vibration of the bonding tool, as well as the frame 8.
Since the bonding is performed by melting or evaporating the insulator 2a by the combined heat with the heating of the heater that warms the insulator 2a,
When bonding is performed, the insulator 2a of the insulated wire 2 can be reliably melted or evaporated, so that no carbide is attached to the bonding surface. Therefore, bonding can be performed in the best possible condition, and, for example, the quality of semiconductor products and the yield in the product manufacturing process can be improved.

なお、本発明は上記一実施例に限定されるものではなく
、その主旨を逸脱しない範囲で変形することかできる。Note that the present invention is not limited to the above-mentioned embodiment, and can be modified without departing from the spirit thereof.

例えば、ツールヒータ６による加熱タイミングを常時で
はなくペレット９とリード端子１０とでのボンディング
するときのみにしてもよい。For example, the timing of heating by the tool heater 6 may not be constant, but may be set only when bonding the pellet 9 and the lead terminal 10.

〔発明の効果〕〔Effect of the invention〕

以上詳記したように本発明によれば、絶縁物を完全に溶
解又は蒸発させて最良の状態にボンディングできる絶縁
ワイヤボンディング方法を提供できる。As described in detail above, according to the present invention, it is possible to provide an insulated wire bonding method that can completely melt or evaporate the insulator and bond in the best condition.

【図面の簡単な説明】[Brief explanation of drawings]

第１図ないし第３図は本発明に係わる絶縁ワイヤボンデ
ィング方法の一実施例を説明するための工程図である。 １・・・リール、２・・・絶縁ワイヤ、３・・・上クラ
ンパ、４・・・下クランパ、５・・・ボンディングツー
ル、６・・・ツールヒータ、７・・・超音波ホール、８
・・・フレーム、９・・・ペレット、１０・・・リード
端子。 出願人代理人　弁理士　鈴江武彦 第１図1 to 3 are process diagrams for explaining one embodiment of the insulated wire bonding method according to the present invention. DESCRIPTION OF SYMBOLS 1... Reel, 2... Insulated wire, 3... Upper clamper, 4... Lower clamper, 5... Bonding tool, 6... Tool heater, 7... Ultrasonic hole, 8
... Frame, 9... Pellet, 10... Lead terminal. Applicant's agent Patent attorney Takehiko Suzue Figure 1

Claims (3)

【特許請求の範囲】[Claims] （１）絶縁ワイヤを被ワイヤボンディング部に導くボン
ディングツールと、このボンディングツールおよびリー
ドフレームを個別に加熱する加熱手段とを備え、前記ワ
イヤボンディング部へのボンディング時、前記加熱手段
から熱を前記ボンディングツールの先端のボール状に伝
えて熱音波振動による摩擦熱との合成熱で前記絶縁物を
溶解又は蒸発させてボンディングを行うことを特徴とす
る絶縁ワイヤボンディング方法。(1) A bonding tool that guides an insulated wire to a wire bonding target part, and a heating means that individually heats the bonding tool and a lead frame, and when bonding to the wire bonding part, heat is transferred from the heating means to the bonding part. An insulated wire bonding method characterized in that bonding is performed by melting or evaporating the insulator with synthetic heat transmitted to a ball shape at the tip of a tool and frictional heat generated by thermosonic vibrations. （２）被ワイヤボンディング部としてペレットへのボン
ディングは、ボンディングツールを加熱手段により絶縁
物の厚みに応じた温度に加熱するとともに前記ボンディ
ングツールを振動させて摩擦熱を発生させる特許請求の
範囲第（１）項記載の絶縁ワイヤボンディング方法。(2) Bonding to a pellet as a wire bonding part is performed by heating a bonding tool to a temperature corresponding to the thickness of the insulator using a heating means and vibrating the bonding tool to generate frictional heat. The insulated wire bonding method described in section 1). （３）被ワイヤボンディング部としてリード端子へのボ
ンディングは、ボンディングツールを加熱手段により加
熱するとともに前記ボンディングツールを振動させて摩
擦熱を発生させる特許請求の範囲第（１）項記載の絶縁
ワイヤボンディング方法。(3) The insulated wire bonding according to claim (1), in which the bonding to the lead terminal as the wire bonding part is performed by heating the bonding tool with a heating means and vibrating the bonding tool to generate frictional heat. Method.
JP60244310A 1985-10-31 1985-10-31 Insulating wire bonding method Pending JPS62104127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60244310A JPS62104127A (en) 1985-10-31 1985-10-31 Insulating wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60244310A JPS62104127A (en) 1985-10-31 1985-10-31 Insulating wire bonding method

Publications (1)

Publication Number Publication Date
JPS62104127A true JPS62104127A (en) 1987-05-14

Family

ID=17116830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60244310A Pending JPS62104127A (en) 1985-10-31 1985-10-31 Insulating wire bonding method

Country Status (1)

Country Link
JP (1) JPS62104127A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02101754A (en) * 1988-10-11 1990-04-13 Hitachi Ltd Bonding process and bonding apparatus
JPH06204295A (en) * 1992-12-28 1994-07-22 Nec Corp Film carrier tape and bonding method of its lead
WO2002080272A3 (en) * 2001-03-30 2003-05-30 Intel Corp Insulated bond wire assembly process technology for integrated circuits

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02101754A (en) * 1988-10-11 1990-04-13 Hitachi Ltd Bonding process and bonding apparatus
JPH06204295A (en) * 1992-12-28 1994-07-22 Nec Corp Film carrier tape and bonding method of its lead
WO2002080272A3 (en) * 2001-03-30 2003-05-30 Intel Corp Insulated bond wire assembly process technology for integrated circuits
US6894398B2 (en) 2001-03-30 2005-05-17 Intel Corporation Insulated bond wire assembly for integrated circuits

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