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JPH0644585B2 - Wire Bonding Method for Insulated Wire - Google Patents

Wire Bonding Method for Insulated Wire

Info

Publication number
JPH0644585B2
JPH0644585B2 JP62040168A JP4016887A JPH0644585B2 JP H0644585 B2 JPH0644585 B2 JP H0644585B2 JP 62040168 A JP62040168 A JP 62040168A JP 4016887 A JP4016887 A JP 4016887A JP H0644585 B2 JPH0644585 B2 JP H0644585B2
Authority
JP
Japan
Prior art keywords
wire
bonding
conductive material
coated wire
ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62040168A
Other languages
Japanese (ja)
Other versions
JPS63208236A (en
Inventor
東作 小島
武 川名
道夫 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62040168A priority Critical patent/JPH0644585B2/en
Publication of JPS63208236A publication Critical patent/JPS63208236A/en
Publication of JPH0644585B2 publication Critical patent/JPH0644585B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4556—Disposition, e.g. coating on a part of the core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、絶縁被覆ワイヤのワイヤボンデイング方法に
係り、特に、半導体装置やプリント板などで絶縁被覆ワ
イヤを使用する配線において、該絶縁被覆ワイヤの導電
材を、導電体電極へ確実に且つ容易に接合するに好適な
ワイヤボンデイング方法に関するものである。Description: TECHNICAL FIELD The present invention relates to a wire bonding method for an insulation-coated wire, and more particularly to a wiring using the insulation-coated wire in a semiconductor device, a printed board, or the like. The present invention relates to a wire bonding method suitable for surely and easily joining a conductive material to a conductor electrode.

〔従来の技術〕[Conventional technology]

従来、半導体装置の回路板などの電極へ、絶縁被覆ワイ
ヤを接合する場合には、たとえば、溶接技術（１９８３
年３月号，２３〜２７頁）に記載のように、予め電極に
半田めつきを施しておき、その上へ絶縁被覆ワイヤを重
ね、加熱したキヤピラリを押し当てて前記半田を融解す
ることにより、リフローソルダリング法によつて接合し
ていた。この場合、絶縁被覆ワイヤの絶縁被覆としてポ
リウレタンなどを使用しておけば、これが約３００℃で
融解するので、電極面の半田が導電材へ乗り移り、容易
に接合を行なうことができる。Conventionally, when an insulating coated wire is joined to an electrode such as a circuit board of a semiconductor device, for example, a welding technique (1983) is used.
March issue, pages 23-27), the electrodes are pre-soldered, insulation-coated wires are laid on top of them, and the heated capillaries are pressed to melt the solder. , Were joined by the reflow soldering method. In this case, if polyurethane or the like is used as the insulation coating of the insulation-coated wire, it melts at about 300 ° C., so that the solder on the electrode surface transfers to the conductive material and the bonding can be easily performed.

ところで、半導体装置の内部配線のように、導電体電
極、すなわち、金，銀，アルミニウム，銅などの電極、
あるいは、アルミナセラミツクスの上にタングステン層
を、その上にニツケル層を、さらにその上に金，アルミ
ニウムなどの金属をめつきしてなる電極へ、絶縁被覆ワ
イヤを接合する場合でも、キャピラリの加熱温度をさら
に高くし、電極表面の金属を融解せしめることにより、
前記同様にして接合を実施することができる。By the way, like an internal wiring of a semiconductor device, a conductor electrode, that is, an electrode made of gold, silver, aluminum, copper, or the like,
Alternatively, even when an insulation-coated wire is bonded to an electrode formed by depositing a tungsten layer on the alumina ceramics, a nickel layer on it, and a metal such as gold or aluminum on it, the heating temperature of the capillary is Is further increased, and by melting the metal on the electrode surface,
Bonding can be performed in the same manner as described above.

また、他の従来技術として、例えば特開昭６０−３１３
４号公報には、金属線の融点より高い融点を有する絶縁
被覆で表面が被覆された金属線を用いるワイヤボンディ
ング方法が開示されており、これによって、特にアルミ
ニウム細線によるボールボンディングを可能にしてい
た。Further, as another conventional technique, for example, Japanese Patent Laid-Open No. Sho 60-313.
Japanese Patent Publication No. 4 discloses a wire bonding method using a metal wire whose surface is coated with an insulating coating having a melting point higher than that of the metal wire, which enables ball bonding particularly with an aluminum thin wire. .

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

上記従来技術の前者は、導電体電極へ絶縁被覆ワイヤを
接合する場合、高温に加熱されたキヤピラリにより、こ
れと直接触れない、接合に関与しない部分の絶縁被覆ま
でも溶けて、余計な長さの導電材が露出し、隣接した導
電材同士が短格したり、電極面へ接触してリーク電流を
発生したり、また、融解した絶縁被覆材が導電体電極へ
付着してその接合を妨害するなどの点については配慮さ
れておらず、接合上の不都合を生ずるという問題点があ
つた。また、上記従来技術の後者は、所望の大きさのボ
ール径を制御することについて十分配慮されておらず、
さらに半導体装置やプリント板などの配線において、第
１ボンディング、第２ボンディングにより、第１，第２
のボンディングパッド間を絶縁被覆ワイヤで配線するこ
とについては開示されていなかった。In the former case of the above-mentioned conventional technique, when the insulation coating wire is bonded to the conductor electrode, the capillary heated to high temperature melts even the insulation coating of the part not directly involved in the bonding, which is not involved in the bonding, resulting in an unnecessary length. Of the conductive material is exposed, adjacent conductive materials are shortened, or leak current is generated by contact with the electrode surface, and the melted insulating coating material adheres to the conductor electrode and interferes with its joining. However, there is a problem in that joining is inconvenient. Further, the latter of the above-mentioned conventional techniques does not give sufficient consideration to controlling the ball diameter of a desired size,
Furthermore, in the wiring of a semiconductor device, a printed board, etc., the first and second bonding are performed by the first bonding and the second bonding.
There is no disclosure about wiring between the bonding pads of FIG.

本発明は、上記従来技術に鑑みてなされたもので、本発
明の目的は、酸化物のない所望のボール径の真球のボー
ルを形成でき、絶縁被覆ワイヤから電極面へリーク電流
が流れたり、絶縁被覆ワイヤ同士が短格したり、また、
融解した絶縁被覆材が接合を妨害するなどの接合上の不
都合がなく、第１ボンディング、第２ボンディングのパ
ッド間を、確実に、かつ容易に接合しうる絶縁被覆ワイ
ヤのワイヤボンディング方法を提供することにある。The present invention has been made in view of the above-mentioned conventional art, and an object of the present invention is to form a true ball having a desired ball diameter without an oxide, and a leak current may flow from an insulating coated wire to an electrode surface. , Insulation-coated wires are short, or
Provided is a wire bonding method for an insulation-coated wire, which does not have a disadvantage in bonding such as a melted insulation-coating material hindering the bonding and can bond reliably and easily between the pads of the first bonding and the second bonding. Especially.

〔問題点を解決するための手段〕[Means for solving problems]

上記目的を達成するために、本発明に係る絶縁被覆ワイ
ヤのワイヤボンディング方法の構成は、導電材の外側へ
絶縁被覆を被覆してなる絶縁被覆ワイヤをキャピラリの
スルーホール内に繰り出し可能に挿入することにより該
絶縁被覆ワイヤを保持し、アーク電源の陽極側へ絶縁被
覆ワイヤの導電材を、陰極側へ放電トーチをそれぞれ接
続し、不活性ガス雰囲気中でアーク放電を行なって前記
絶縁ワイヤの先端にボールを形成し、このボールを用い
て導電材を接続する方法において、上記絶縁被覆ワイヤ
を導電材の外側へ該導電材の融点より低い融点を有する
絶縁被覆を用いるものとし、アーク放電の入熱により前
記絶縁被覆が必要最小限溶け上がり導電材のボール形成
のための所要量が確保でき、かつ導電材先端と放電トー
チとの離間距離により所望の大きさのボール径の制御が
できるように構成してアーク放電を行ない、前記絶縁被
覆ワイヤの先端に所望の大きさのボールを形成し、キャ
ピラリによって、そのボールを第１のボンディングパッ
ドへ位置決めするとともに、該ボールへ所定の圧力を加
えながら超音波振動を付加することにより第１ボンディ
ングを行ない、前記キャピラリによって、前記絶縁被覆
ワイヤの途中部分を該ワイヤの絶縁被覆のガラス転移温
度以上にまで加熱された第２のボンディングパッドへ位
置決めするとともに、該途中部分へ所定の圧力を加えな
がら超音波振動を付加することにより第２ボンディング
を行なったのち、該絶縁被覆ワイヤを、その他端側へ引
張力を加えて前記第２のボンディングパッドから切り離
すことにより、前記第１，第２のボンディングパッド間
を前記絶縁被覆ワイヤで配線するようにしたものであ
る。In order to achieve the above object, the structure of the wire bonding method for an insulating coated wire according to the present invention is such that an insulating coated wire obtained by coating an insulating coating on the outside of a conductive material is inserted into a through hole of a capillary so as to be able to be drawn out. By holding the insulation-coated wire, the conductive material of the insulation-coated wire is connected to the anode side of the arc power source, and the discharge torch is connected to the cathode side, respectively, and the arc discharge is performed in an inert gas atmosphere to perform the tip of the insulation wire. In the method of forming a ball on a wire and connecting a conductive material using the ball, the insulating coated wire is provided on the outside of the conductive material with an insulating coating having a melting point lower than the melting point of the conductive material. The insulating coating is melted by heat to a required minimum and a required amount for forming a ball of conductive material can be secured, and the distance between the tip of the conductive material and the discharge torch can be increased. A ball having a desired size can be controlled by performing arc discharge, a ball having a desired size is formed at the tip of the insulating coated wire, and the ball is connected to the first bonding pad by a capillary. The first bonding is performed by positioning ultrasonic waves and applying ultrasonic vibration while applying a predetermined pressure to the ball, and the intermediate portion of the insulation-coated wire is heated to the glass transition temperature of the insulation coating of the wire or more by the capillary. After the second bonding is performed by positioning to the second bonding pad heated up to 0.degree. C. and applying the ultrasonic vibration while applying a predetermined pressure to the intermediate part, the insulating coated wire is connected to the other end side. A tensile force is applied to the second bonding pad to separate it from the first and second bonding pads. Between loading pad is obtained so as to interconnect with the insulation coated wire.

〔作用〕[Action]

本発明は、絶縁被覆ワイヤを陽極側に、放電トーチを陰
極側に給電し、不活性ガス雰囲気中でアーク放電を行な
い、まず第１ボンディングにおいて、該ワイヤの先端に
酸化物のない所望の大きさの真球のボールを形成する。
このとき、ボール形成に必要な最小限の絶縁被覆の溶け
上がりと、導電材先端、放電トーチ間の離間距離とによ
って所望の大きさのボールが形成でき、しかも必要以上
の絶縁被覆の溶け上がりを生じない。この所望の大きさ
のボールを第１のボンデイングパツドへ接合し、第２ボ
ンデイングにおいては、絶縁被覆ワイヤの途中部分の絶
縁被覆を流動状態にまで加熱し、当該部分の導電材を第
２のボンデイングパツドへ接合することにより、従来の
問題点を改善し、すなわち、リーク電流を発生せず、
絶縁被覆ワイヤ同士が短格せず、溶けた絶縁被覆材
が接合を妨害することなく、前記第１，第２のボンデイ
ングパツド間を、前記絶縁被覆ワイヤによつて、確実に
且つ容易に接合することができる。According to the present invention, the insulation-coated wire is fed to the anode side and the discharge torch is fed to the cathode side to perform arc discharge in an inert gas atmosphere. First, in the first bonding, the tip of the wire has a desired size without oxide. Form a true spherical ball.
At this time, a ball of a desired size can be formed by the minimum melting of the insulating coating required for ball formation and the distance between the conductive material tip and the discharge torch, and more melting of the insulating coating than is necessary. Does not happen. This ball having a desired size is joined to the first bonding pad, and in the second bonding, the insulating coating in the middle part of the insulating coated wire is heated to a fluid state, and the conductive material in that part is heated to the second bonding pad. By bonding to the bonding pad, the conventional problems are improved, that is, leakage current is not generated,
The insulation-coated wires are not short, and the melted insulation-coating material does not hinder the joining, and the insulation-coated wire is used to securely and easily join the first and second bonding pads. can do.

〔実施例〕〔Example〕

実施例の説明に入るまえに、本発明に係る基本的事項
を、第６〜９図を用いて説明する。Before starting the description of the embodiments, the basic matters according to the present invention will be described with reference to FIGS.

第６〜９図は、本発明の開発時に確認した事項を説明す
るためのものであり、第６図は、第１ボンデイングにお
けるボールの形成手段を示す略示構成図、第７図は、こ
の第６図に係る手段によつて形成されたボールを示す正
面図、第８図は、本発明とは異なり、第６図に係るもの
と逆の電極接続をしたボール形成手段を示す略示構成
図、第９図は、この第８図に係る手段によつて形成され
たボールを示す正面図である。6 to 9 are for explaining the matters confirmed at the time of development of the present invention. FIG. 6 is a schematic configuration diagram showing a ball forming means in the first bonding, and FIG. Unlike the present invention, FIG. 8 is a front view showing a ball formed by the means shown in FIG. 6, and FIG. 8 is a schematic view showing a ball forming means having an electrode connection opposite to that shown in FIG. FIGS. 9 and 10 are front views showing a ball formed by the means according to FIG.

キヤピラリのスルーホール内に繰り出し可能に挿入され
た絶縁被覆ワイヤの先端を、前記キヤピラリによつて導
電体電極に係る第１のボンデイングパツドへ位置決めし
て、その先端を該ボンデイングパツドへ接合する第１ボ
ンデイングにおいて、本発明では、アーク放電の入熱に
より前記先端の導電材を融解してその表面張力によって
導電材のボールを形成し、このボール部分以外では絶縁
被覆が溶けることなく、すなわち必要以上の溶け上がり
がなく、絶縁被覆によつて導電材を被覆し、キヤピラリ
によつて、そのボールを第１のボンデイングパツドへ位
置決めしたのち、そのボールへ所定の圧力を加えながら
超音波振動を付加して当該ボンデイングパツドへ接続す
るようにした。The tip of the insulating coated wire inserted into the through hole of the capillary so as to be able to be extended is positioned by the capillary to the first bonding pad related to the conductor electrode, and the tip is joined to the bonding pad. In the first bonding, according to the present invention, the conductive material at the tip is melted by the heat input of the arc discharge and the balls of the conductive material are formed by the surface tension of the conductive material. There is no melting above, the conductive material is covered with an insulating coating, and the ball is positioned on the first bonding pad by the capillary, and ultrasonic vibration is applied while applying a predetermined pressure to the ball. It was added to connect to the bonding pad.

ボールの形成方法を、第６図を用いて説明すると、３
は、導電材１の外側へ絶縁被覆２を被覆してなる絶縁被
覆ワイヤ、５はアーク電源、４は、このアーク電源５の
陰極側に接続された放電トーチであり、絶縁被覆ワイヤ
３の導電材１は、アーク電源５の陽極側に接続されてい
る。そして、少なくとも、絶縁被覆ワイヤ３と放電トー
チ４との間は、不活性ガス雰囲気中にある。A ball forming method will be described with reference to FIG.
Is an insulating coated wire formed by coating the insulating material 2 on the outside of the conductive material 5, 5 is an arc power source, 4 is a discharge torch connected to the cathode side of the arc power source 5, and the insulating coated wire 3 is electrically conductive. The material 1 is connected to the anode side of the arc power supply 5. Then, at least between the insulating coated wire 3 and the discharge torch 4 is in an inert gas atmosphere.

このように構成した手段において、アーク電源５をＯＮ
にすると、アーク６の電子が最短距離で到達できる導電
材１の先端１ａに集中する。このため、絶縁被覆２は熱
分解するが、その溶け上がり量は必要最小限のものであ
り、しかも導電材１の先端１ａを安定に融解し、第７図
に示すような真球のボール７を形成することができる。
したがつて、余計な長さの導電材１が露出することはな
く、隣接した絶縁被覆ワイヤ３同士が接触しても互いに
短絡することはなく、導電材１の電極面への接触も防止
することができる。また、先端１ａ近傍の絶縁被覆２は
熱分解してしまうので、接合を妨害することもない。The arc power source 5 is turned on by the means configured as described above.
Then, the electrons of the arc 6 concentrate on the tip 1a of the conductive material 1 which can reach the shortest distance. Therefore, the insulating coating 2 is thermally decomposed, but its melting amount is the minimum necessary, and furthermore, the tip 1a of the conductive material 1 is stably melted, and the spherical ball 7 as shown in FIG. Can be formed.
Therefore, the conductive material 1 having an excessive length is not exposed, and even if the adjacent insulating coated wires 3 come into contact with each other, they are not short-circuited with each other, and the contact of the conductive material 1 with the electrode surface is also prevented. be able to. Further, since the insulating coating 2 near the tip 1a is thermally decomposed, it does not interfere with the joining.

これに対して、第８図に示すように、アーク電源５の陽
極側に放電トーチ４を、陰極側に絶縁被覆ワイヤ３の導
電材１を、それぞれ接続してアーク放電を行なうと、こ
のアーク放電の初期において、絶縁被覆２から熱電子を
放出し、アーク８が絶縁被覆２の反先端側へ這い上が
り、熱が表皮部から投入される。このため、第９図に示
すように、絶縁被覆２は溶け上がり量だけ余計に溶
け、その分だけ導電材１が露出する。また、溶け上がり
端部にこぶ９が発生する。したがつて、隣接した絶縁被
覆ワイヤ３同士の短絡，導電材１の電極面への接触を生
ずるのみならず、こぶ９によつてキヤピラリ１０のスル
ーホール１０ａが目詰まりして、絶縁被覆ワイヤ３の繰
り出しを不可能にするおそれがある。On the other hand, as shown in FIG. 8, when the discharge torch 4 is connected to the anode side of the arc power source 5 and the conductive material 1 of the insulation-coated wire 3 is connected to the cathode side to perform arc discharge, this arc In the initial stage of discharge, the insulating coating 2 emits thermoelectrons, the arc 8 crawls to the side opposite to the tip of the insulating coating 2, and heat is input from the skin portion. For this reason, as shown in FIG. 9, the insulating coating 2 is melted by an excessive amount, and the conductive material 1 is exposed by that amount. Also, a bump 9 is generated at the melted end. Therefore, not only short-circuiting between the adjacent insulating coated wires 3 and contact with the electrode surface of the conductive material 1 but also the through hole 10a of the capillary 10 is clogged by the hump 9 and the insulating coated wire 3 There is a risk that it will not be possible to pay out.

本発明に係るボールの形成方法は、前述したように、絶
縁被覆ワイヤの導電材１を陽極側に、放電トーチ４を陰
極側に、それぞれ接続するようにしたので、絶縁被覆２
の溶け上がり量はほとんどなく、また、こぶも発生する
ことはない。As described above, in the ball forming method according to the present invention, the conductive material 1 and the discharge torch 4 of the insulating coated wire are connected to the anode side and the cathode side, respectively.
There is almost no melted amount and no hump is generated.

本発明は、上記基本的事項に基づいてなされたものであ
り、以下実施例によつて説明する。The present invention has been made on the basis of the above basic matters, and will be described below with reference to examples.

第１図は、本発明の一実施例に係る、絶縁被覆ワイヤの
ワイヤボンデイング方法によつて配線された第１，第２
のボンデイングパツドを示す斜視図、第２図は、この第
１図に係るワイヤボンデイング方法によつて、絶縁被覆
ワイヤの先端のボールを第１のボンデイングパツドに接
合している状態を示す正面図、第３図は、前記絶縁被覆
ワイヤの途中部分を第２のボンデイングパツドに接合し
ている状態を示す正面図、第４図は、第１図に係るワイ
ヤボンデイング方法の実施に使用されるワイヤボンデイ
ング装置の要部を示す略示図、第５図は、この第４図に
係るワイヤボンデイング装置によつて配線したのち、樹
脂封止されたＩＣパツケージを示す斜視図である。FIG. 1 shows first and second wirings made by a wire bonding method for insulating coated wires according to an embodiment of the present invention.
FIG. 2 is a perspective view showing the bonding pad of FIG. 2, and FIG. 2 is a front view showing a state in which the ball at the tip of the insulating coated wire is joined to the first bonding pad by the wire bonding method according to FIG. 3 and 4 are front views showing a state in which an intermediate portion of the insulating coated wire is joined to a second bonding pad, and FIG. 4 is used for carrying out the wire bonding method according to FIG. FIG. 5 is a schematic view showing a main part of the wire bonding apparatus according to the present invention, and FIG. 5 is a perspective view showing an IC package which is resin-sealed after wiring by the wire bonding apparatus according to FIG.

まず、ワイヤボンデイング装置の構成を説明する。First, the configuration of the wire bonding device will be described.

第４図において、５はアーク電源であり、このアーク電
源５は、コンデンサ１１と、このコンデンサ１１へ充電
させ、放電電流を供給することができる蓄積用コンデン
サ１２と、この蓄積用コンデンサ１２をトリガするサイ
リスタ１４と、このサイリスタ１４と直列に接続された
抵抗１３とを有している。In FIG. 4, reference numeral 5 is an arc power supply, and this arc power supply 5 triggers the capacitor 11, the storage capacitor 12 that can charge the capacitor 11 and supply a discharge current, and the storage capacitor 12. It has a thyristor 14 and a resistor 13 connected in series with the thyristor 14.

４は、このアーク電源５の陰極側に接続された放電トー
チ、１０は、そのスルーホール内に絶縁被覆ワイヤ３を
繰り出し可能に挿入することができるキヤピラリであつ
て、このキヤピラリ１０は、超音波発振器（図示せず）
の超音波ホーンの先端に取付けられている。前記超音波
発振器は、ＸＹテーブル（図示せず）上に載置固定され
た昇降機構部（図示せず）に取付けられており、この昇
降機構部によつてキヤピラリ１０を上下動させることが
できる。また、前記ＸＹテーブルによつて、キヤピラリ
１０をＸＹ面内で移動させ、このキヤピラリ１０のスル
ーホールに挿入されている絶縁被覆ワイヤ３の接合部分
を、所定の接合位置へ位置決めすることができるように
なつている。Reference numeral 4 is a discharge torch connected to the cathode side of the arc power source 5, and 10 is a capillary into which the insulation-coated wire 3 can be inserted so as to be able to be drawn out, and the capillary 10 is an ultrasonic wave. Oscillator (not shown)
It is attached to the tip of the ultrasonic horn. The ultrasonic oscillator is attached to an elevating mechanism section (not shown) mounted and fixed on an XY table (not shown), and the elevating mechanism section can move the capillaries 10 up and down. . Further, by using the XY table, the capillaries 10 can be moved in the XY plane, and the joint portion of the insulating coated wire 3 inserted into the through hole of the capillaries 10 can be positioned at a predetermined joint position. It has become.

絶縁被覆ワイヤ３の他端側は巻線支持部（図示せず）に
巻回されており、絶縁被覆ワイヤ３は、この巻線支持部
から逐次繰り出されて、途中に設けられた開閉可能なク
ランプ（図示せず）を経て開閉式把持電極１５（詳細後
述），キヤピラリ１０へ至る。前記開閉式把持電極１５
は、アーク電源５の陽極側に接続されており、閉じたと
きには、絶縁被覆ワイヤ３を把持し、その針状プローブ
（図示せず）が絶縁被覆２を貫通して導電材１と接触
し、開いたときは、絶縁被覆ワイヤ３から離れるように
なつている。１６は、内部に、前記放電トーチ４，キヤ
ピラリ１０，これから配線すべき未配線ＩＣパツケージ
（詳細後述）を収納することができるカプセルであつ
て、このカプセル１６の中に不活性ガスに係るアルゴン
１７が封入されている。The other end side of the insulation-coated wire 3 is wound around a winding support portion (not shown), and the insulation-coated wire 3 is sequentially fed out from this winding support portion and can be opened and closed on the way. An opening / closing type gripping electrode 15 (details will be described later) and a capillary 10 are reached via a clamp (not shown). The open / close type gripping electrode 15
Is connected to the anode side of the arc power source 5, and when closed, grips the insulation-coated wire 3 and its needle probe (not shown) penetrates the insulation coating 2 to come into contact with the conductive material 1. When opened, it separates from the insulation-coated wire 3. Reference numeral 16 denotes a capsule capable of accommodating the discharge torch 4, the capillary 10, and an unwired IC package (details will be described later) to be wired from now on. Is enclosed.

前記未配線ＩＣパツケージは、導電体電極に係る、第１
のボンデイングパツド１８，第３のボンデイングパツド
（図示せず），…を有するＩＣチツプ１９と、導電体電
極に係る第２のボンデイングパツド２０を有する第１リ
ード部２１，導電体電極に係る第４のボンデイングパツ
ド（図示せず）を有する第２リード部（図示せず），…
を具備してなるものである。The unwired IC package has a first
, An IC chip 19 having a third bonding pad 18, a third bonding pad (not shown), ..., A first lead portion 21 having a second bonding pad 20 relating to the conductor electrode, and a conductor electrode. A second lead portion (not shown) having such a fourth bonding pad (not shown), ...
It is equipped with.

上記のように構成したワイヤボンデイング装置を使用し
て、本発明の一実施例に係る、絶縁被覆ワイヤのワイヤ
ボンデイング方法を説明する。A wire bonding method for an insulating coated wire according to an embodiment of the present invention will be described using the wire bonding apparatus configured as described above.

この実施例は、前記未配線ＩＣパツケージのＩＣチツプ
と各リード部とを絶縁被覆ワイヤ３によつて配線するも
のである。In this embodiment, the IC chip of the unwired IC package and each lead portion are wired by an insulating coated wire 3.

まず、前記巻線支持部に絶縁被覆ワイヤ３、たとえば直
径２０μｍの金の導電材１をポリウレタンの絶縁被覆２
で被覆してなるものを必要量だけ巻回し、その一端側
を、前記クランプを通して、キヤピラリ１０のスルーホ
ールへ挿入し、先端がキヤピラリ１０から所定長さだけ
突出するようにしておく。このとき、、開閉式把持電極
１５は開になつているが、閉にすれば、絶縁被覆ワイヤ
３を把持して導電材１との導通がとれるようになつてい
る。First, an insulating coating wire 3, for example, a gold conductive material 1 having a diameter of 20 μm is attached to the winding supporting portion, and an insulating coating 2 of polyurethane is used.
The material covered with (1) is wound by a required amount, and one end side thereof is inserted into the through hole of the capillary 10 through the clamp so that the tip is projected from the capillary 10 by a predetermined length. At this time, the open / close type gripping electrode 15 is open, but when it is closed, the insulating coated wire 3 is gripped to establish electrical connection with the conductive material 1.

カプセル１６内の治具（図示せず）上の所定位置に前記
未配線ＩＣパツケージを載置固定する。このパツケージ
の前記各リード部は、ヒータ（図示せず）によつて、絶
縁被覆ワイヤ３の絶縁被覆２のガラス転位温度以上（た
とえば７５℃）にまで加熱することができるようになつ
ている。The unwired IC package is mounted and fixed at a predetermined position on a jig (not shown) in the capsule 16. Each lead portion of this package can be heated by a heater (not shown) to a temperature higher than the glass transition temperature of the insulating coating 2 of the insulating coating wire 3 (for example, 75 ° C.).

ここでワイヤボンデイング装置をＯＮにすると、前記ヒ
ータがＯＮになり、全リード部が所定温度まで加熱され
る。前記ＸＹテーブル，昇降機構部によつて絶縁被覆ワ
イヤ３の先端３ａが放電トーチ４から所定の距離だけ離
間した位置に位置決めされる。開閉式把持電極１５が閉
になり、アーク電源５がＯＮになり（たとえばＤＣに−
1000Ｖを印加する）、０．１２ｍｓという短時間で、導
電材１と放電トーチ４との間で放電が行なわれ、第７図
に示すようなボール７が形成される。開閉式把持電極１
５が開になり、前記ＸＹテーブルによつて、ボール７が
ＩＣチツプ１９の第１のボンデイングパツド１８上へ位
置決めされる。そして、前記昇降機構部によつて、位置
決めされたボール７へ所定圧力が加圧される。前記超音
波発振器がＯＮになり、超音波振動（たとえば４０ＫＨ
ｚ）がキヤピラリ１０へ伝達され、第２図に示すよう
に、ボール７が矢印方向へ振動する（たとえば振動２μ
ｍ）。そして０．３ｓ後に、そのボール７がボール圧縮
部７ａとなつて第１のボンデイングパツド１８へ接合さ
れ、前記超音波発振器がＯＦＦになる。絶縁被覆ワイヤ
３を繰り出しながらキヤピラリ１０が上昇し、再び下降
して、該ワイヤ３の所定の途中部分を、第１リード部２
１の第２のボンデイングパツド２０上へ位置決めする。
そして、前記昇降機構部によつて、位置決めされた途中
部分へ所定圧力が加圧され、さらに、第２のボンデイン
グパツド２０を介して第１リード部２１から加熱され、
当該部分の絶縁被覆２が流動状態になる。再び前記超音
波発振器がＯＮになり、超音波振動が前記途中部分へ伝
達され、第３図に示すように、この途中部分が矢印方向
へ振動し、０．３ｓ後に、導電材１が露出してなるウエ
ツジ部２２が第２のボンデイングパツド２０へ接合され
る。次に、前記クランプが閉じ、前記昇降機構部によつ
てキヤピラリ１０が上昇すると、絶縁被覆ワイヤ３に引
張力がかかり、この絶縁被覆ワイヤ３がウエツジ部２２
の端で切れる。これにより、第１のボンデイングパツド
１８と第２のボンデイングパツド２０とが絶縁被覆ワイ
ヤ３で配線される。キヤピラリ１０がさらに移動して、
絶縁被覆ワイヤ３の端、すなわち先端３ａが放電トーチ
４から所定の距離だけ離間した位置へ位置決めされる。When the wire bonding device is turned on, the heater is turned on and all lead parts are heated to a predetermined temperature. The tip 3a of the insulating coated wire 3 is positioned at a position separated from the discharge torch 4 by a predetermined distance by the XY table and the lifting mechanism. The open / close type gripping electrode 15 is closed, and the arc power supply 5 is turned on (for example, DC-
Discharge is performed between the conductive material 1 and the discharge torch 4 in a short time of 0.12 ms (applying 1000 V), and the ball 7 as shown in FIG. 7 is formed. Openable gripping electrode 1
5 is opened, and the ball 7 is positioned on the first bonding pad 18 of the IC chip 19 by the XY table. Then, a predetermined pressure is applied to the positioned ball 7 by the elevating mechanism section. When the ultrasonic oscillator is turned on, ultrasonic vibration (for example, 40 KH
z) is transmitted to the capillary 10 and the ball 7 vibrates in the direction of the arrow as shown in FIG.
m). After 0.3 s, the ball 7 is joined to the first bonding pad 18 together with the ball compression portion 7a, and the ultrasonic oscillator is turned off. While feeding out the insulation-coated wire 3, the capillary 10 ascends and descends again so that a predetermined intermediate portion of the wire 3 is moved to the first lead portion 2
1. Positioning onto the second bonding pad 20 of 1.
Then, a predetermined pressure is applied to the positioned intermediate portion by the elevating mechanism portion, and further, is heated from the first lead portion 21 via the second bonding pad 20,
The insulating coating 2 of the said part will be in a fluid state. The ultrasonic oscillator is turned on again, the ultrasonic vibration is transmitted to the middle portion, and as shown in FIG. 3, the middle portion vibrates in the direction of the arrow, and the conductive material 1 is exposed after 0.3 s. The resulting wedge portion 22 is joined to the second bonding pad 20. Next, when the clamp is closed and the capillaries 10 are lifted by the elevating mechanism section, a tensile force is applied to the insulating coated wire 3, and the insulating coated wire 3 is pulled by the wedge section 22.
Cut at the edge of. As a result, the first bonding pad 18 and the second bonding pad 20 are wired by the insulating coated wire 3. The capillaries 10 have moved further,
The end of the insulating coated wire 3, that is, the tip 3a is positioned at a position separated from the discharge torch 4 by a predetermined distance.

以降、さきと同様の動作が繰り返されて、第３のボンデ
イングパツドと第４のボンデイングパツドとが配線され
るなどして、すべての接合が終了したとき、このワイヤ
ボンデイング装置がＯＦＦになり、前記未配線ＩＣパツ
ケージの配線を完了する。そして、これを樹脂２３で封
止することにより、第５図に示すような、所望のＩＣパ
ツケージ２４が得られる。After that, the same operation as the above is repeated and the third bonding pad and the fourth bonding pad are wired, and when all the joining is completed, the wire bonding device is turned off. The wiring of the unwired IC package is completed. Then, by sealing this with resin 23, a desired IC package 24 as shown in FIG. 5 is obtained.

以上説明した実施例によれば、第１ボンデイング，第３
ボンデイング，…においては、絶縁被覆２の溶け上がり
がなくボール７を形成し、このボール７を第１のボンデ
イングパツド１８，第３のボンデイングパツド，…へ接
合し、また、第２ボンデイング，第４ボンデイング，…
においては、ウエツジ部２２となる絶縁被覆２の途中部
分のみを、リード部からの加熱によつて流動状態にし、
当該部分の導電材１を第２のボンデイングパツド２０，
第４のボンデイングパツド，…へ接合するようにしたの
で、従来のように、絶縁被覆ワイヤ３の露出した導電材
ＩＣチツプの外周上端に接触してリーク電流を発生した
り、交差する絶縁被覆ワイヤ３の導電材同士が短絡した
り、溶けた絶縁被覆材がボンデイングパツドへ付着して
接合を妨害したりするなどの不都合がなく、また、各ボ
ンデイングパツド１８，２０、…へ絶縁被覆ワイヤ３を
確実に、且つ容易に接合することができるという効果が
ある。According to the embodiment described above, the first bonding, the third
In the bonding, ... The insulating coating 2 is not melted to form a ball 7, and the ball 7 is joined to the first bonding pad 18, the third bonding pad ,. Fourth Bonding ...
In the above, only the middle part of the insulating coating 2 to be the wedge portion 22 is made to flow by heating from the lead portion,
The conductive material 1 of the portion is connected to the second bonding pad 20,
Since it is joined to the fourth bonding pad, ... As in the conventional case, a leak current is generated by contacting the exposed outer peripheral upper end of the conductive material IC chip of the insulating coating wire 3 or a crossing insulating coating is formed. There is no inconvenience that the conductive materials of the wire 3 are short-circuited, or the melted insulating coating material adheres to the bonding pad and interferes with the bonding. In addition, the insulating coating is applied to each bonding pad 18, 20 ,. There is an effect that the wire 3 can be joined reliably and easily.

なお、本実施例においては、金の導電材１をポリウレタ
ンの絶縁被覆２で被覆した絶縁被覆ワイヤ３を使用した
ワイヤボンデイング方法について説明したが、金のほ
か、たとえばアルミニウム、銅などの導電材を、ポリエ
ステル，ポリイミドなどの絶縁被覆で被覆した絶縁被覆
ワイヤを使用したワイヤボンデイングにも同様に適用で
きるものである。In the present embodiment, the wire bonding method using the insulating coated wire 3 in which the gold conductive material 1 is coated with the polyurethane insulating coating 2 has been described. However, in addition to gold, a conductive material such as aluminum or copper is used. It can be similarly applied to wire bonding using an insulating coated wire coated with an insulating coating such as polyester, polyimide or the like.

さらに、本実施例においては、カプセル１６内にアルゴ
ンを封入するようにしたが、アルゴンに限らず、不活性
ガス、すなわち、絶縁被覆ワイヤ３のアーク放電時に、
接合に悪影響を与える酸化物を生成せず、絶縁被覆２を
熱分解によつて除去することを可能にするもの、たとえ
ば窒素などを封入するようにしてもよい。Further, in the present embodiment, argon is sealed in the capsule 16, but not limited to argon, an inert gas, that is, when the insulating coated wire 3 is arc-discharged,
It is also possible to enclose a substance, such as nitrogen, which does not generate an oxide that adversely affects the bonding and allows the insulating coating 2 to be removed by thermal decomposition.

〔発明の効果〕〔The invention's effect〕

以上詳細に説明したように、本発明によれば、酸化物の
ない所望のボール径の真球のボールを形成でき、絶縁被
覆ワイヤから電極面へリーク電流が流れたり、絶縁被覆
ワイヤ同士が短絡したり、また、融解した絶縁被覆材が
接合を妨害するなどの接合上の不都合がなく、第１ボン
ディング、第２ボンディングのパッド間を、確実に、か
つ容易に接合しうる絶縁被覆ワイヤのワイヤボンディン
グ方法を提供することができる。As described in detail above, according to the present invention, it is possible to form a spherical ball having a desired ball diameter without an oxide, a leak current flows from the insulating coated wire to the electrode surface, or the insulating coated wires are short-circuited. Insulation coated wire that can be reliably and easily bonded between the pads of the first bonding and the second bonding without any inconvenience in bonding such that the melted insulating coating material interferes with the bonding. A bonding method can be provided.

【図面の簡単な説明】 第１図は、本発明の一実施例に係る、絶縁被覆ワイヤの
ワイヤボンデイング方法によつて配線された第１，第２
のボンデイングパツドを示す斜視図、第２図は、この第
１図に係るワイヤボンデイング方法によつて、絶縁被覆
ワイヤの先端のボールを第１のボンデイングパツドに接
合ている状態を示す正面図、第３図は、前記絶縁被覆ワ
イヤの途中部分を第２のボンデイングパツドに接合して
いる状態を示す正面図、第４図は、第１図に係るワイヤ
ボンデイング方法の実施に使用されるワイヤボンデイン
グ装置の要部を示す略示図、第５図は、この第４図に係
るワイヤボンデイング装置によつて配線したのち、樹脂
封止されたＩＣパツケージを示す斜視図、第６図〜第９
図は、本発明に係る基本的事項を説明するためのもので
あり、第６図は、第１ボンデイングにおけるボールの形
成手段を示す略示構成図、第７図は、この第６図に係る
手段によつて形成されたボールを示す正面図、第８図
は、本発明とは異なり、第６図に係るものと逆の電極接
続をしたボール形成手段を示す略示構成図、第９図は、
この第８図に係る手段によつて形成されたボールを示す
正面図である。 １……導電材、２……絶縁被覆、３……絶縁被覆ワイ
ヤ、４……放電トーチ、５……アーク電源、７……ボー
ル、１０……キヤピラリ、１０ａ……スルーホール、１
７……アルゴン、１８……第１のボンデイングパツド、
２０……第２のボンデイングパツド。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows first and second wirings made by a wire bonding method for insulating coated wires according to an embodiment of the present invention.
FIG. 2 is a perspective view showing the bonding pad of FIG. 2, and FIG. 2 is a front view showing a state in which the ball at the tip of the insulation-coated wire is joined to the first bonding pad by the wire bonding method according to FIG. 3 is a front view showing a state in which an intermediate portion of the insulating coated wire is joined to a second bonding pad, and FIG. 4 is used for carrying out the wire bonding method according to FIG. FIG. 5 is a schematic view showing a main part of the wire bonding apparatus, and FIG. 5 is a perspective view showing an IC package which is resin-sealed after wiring by the wire bonding apparatus according to FIG. 4, and FIGS. 9
The figure is for explaining the basic matters according to the present invention. FIG. 6 is a schematic configuration diagram showing a ball forming means in the first bonding, and FIG. 7 is related to this FIG. 8 is a front view showing a ball formed by the means, FIG. 8 is a schematic configuration diagram showing a ball forming means having an electrode connection opposite to that of FIG. 6 unlike the present invention, and FIG. Is
It is a front view which shows the ball formed by the means which concerns on this FIG. 1 ... Conductive material, 2 ... Insulation coating, 3 ... Insulation coating wire, 4 ... Discharge torch, 5 ... Arc power supply, 7 ... Ball, 10 ... Capillary, 10a ... Through hole, 1
7 ... Argon, 18 ... First Bonding Pad,
20 ... Second bonding pad.

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】導電材の外側へ絶縁被覆を被覆してなる絶
縁被覆ワイヤをキャピラリのスルーホール内に繰り出し
可能に挿入することにより該絶縁被覆ワイヤを保持し、
アーク電源の陽極側へ絶縁被覆ワイヤの導電材を、陰極
側へ放電トーチをそれぞれ接続し、不活性ガス雰囲気中
でアーク放電を行なって前記絶縁ワイヤの先端にボール
を形成し、このボールを用いて導電材を接続する方法に
おいて、 上記絶縁被覆ワイヤを、導電材の外側へ該導電材の融点
より低い融点を有する絶縁被覆を用いるものとし、 アーク放電の入熱により前記絶縁被覆が必要最小限溶け
上がり導電材のボール形成のための所要量が確保でき、
かつ導電材先端と放電トーチとの離間距離により所望の
大きさのボール径の制御ができるように構成してアーク
放電を行ない、前記絶縁被覆ワイヤの先端に所望の大き
さのボールを形成し、 キャピラリによって、そのボールを第１のボンディング
パッドへ位置決めするとともに、該ボールへ所定の圧力
を加えながら超音波振動を付加することにより第１ボン
ディングを行ない、 前記キャピラリによって、前記絶縁被覆ワイヤの途中部
分を、該ワイヤの絶縁被覆のガラス転移温度以上にまで
加熱された第２のボンディングパッドへ位置決めすると
ともに、該途中部分へ所定の圧力を加えながら超音波振
動を付加することにより第２ボンディングを行なったの
ち、 該絶縁被覆ワイヤを、その他端側へ引張力を加えて前記
第２のボンディングパッドから切り離すことにより、前
記第１，第２のボンディングパッド間を前記絶縁被覆ワ
イヤで配線するようにしたことを特徴とする絶縁被覆ワ
イヤのワイヤボンディング方法。1. An insulating coated wire formed by coating an insulating coating on the outside of a conductive material is inserted into a through hole of a capillary so that the insulating coated wire can be held.
Connect the conductive material of the insulation-coated wire to the anode side of the arc power source and the discharge torch to the cathode side, respectively, and perform arc discharge in an inert gas atmosphere to form a ball at the tip of the insulated wire. In the method for connecting a conductive material by means of the above method, the insulating coated wire is provided with an insulating coating having a melting point lower than the melting point of the conductive material on the outside of the conductive material, and the insulating coating is heated to the minimum required by the heat input of arc discharge. The required amount of molten conductive material for ball formation can be secured,
And arc discharge is performed so that the ball diameter of a desired size can be controlled by the distance between the tip of the conductive material and the discharge torch, and a ball of a desired size is formed at the tip of the insulating coated wire. The capillary is used to position the ball on the first bonding pad, and the first bonding is performed by applying ultrasonic vibration while applying a predetermined pressure to the ball. Is positioned on the second bonding pad heated to the glass transition temperature of the insulating coating of the wire or higher, and ultrasonic vibration is applied while applying a predetermined pressure to the intermediate portion to perform the second bonding. After that, applying a tensile force to the other end of the insulating coated wire, the second bonding pad is applied. By separating from the first, a wire bonding method of the insulating coated wire, characterized in that between the second bonding pads so as to interconnect with the insulation coated wire.
JP62040168A 1987-02-25 1987-02-25 Wire Bonding Method for Insulated Wire Expired - Lifetime JPH0644585B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62040168A JPH0644585B2 (en) 1987-02-25 1987-02-25 Wire Bonding Method for Insulated Wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62040168A JPH0644585B2 (en) 1987-02-25 1987-02-25 Wire Bonding Method for Insulated Wire

Publications (2)

Publication Number Publication Date
JPS63208236A JPS63208236A (en) 1988-08-29
JPH0644585B2 true JPH0644585B2 (en) 1994-06-08

Family

ID=12573235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62040168A Expired - Lifetime JPH0644585B2 (en) 1987-02-25 1987-02-25 Wire Bonding Method for Insulated Wire

Country Status (1)

Country Link
JP (1) JPH0644585B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7261230B2 (en) * 2003-08-29 2007-08-28 Freescale Semiconductor, Inc. Wirebonding insulated wire and capillary therefor
JP6201626B2 (en) 2013-10-23 2017-09-27 スミダコーポレーション株式会社 Electronic component and method for manufacturing electronic component

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603134A (en) * 1983-06-20 1985-01-09 Mitsubishi Electric Corp Wire bonding method

Also Published As

Publication number Publication date
JPS63208236A (en) 1988-08-29

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