JPS6170719A - Method of forming pattern - Google Patents
Method of forming patternInfo
- Publication number
- JPS6170719A JPS6170719A JP19287584A JP19287584A JPS6170719A JP S6170719 A JPS6170719 A JP S6170719A JP 19287584 A JP19287584 A JP 19287584A JP 19287584 A JP19287584 A JP 19287584A JP S6170719 A JPS6170719 A JP S6170719A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- electron beam
- pattern
- isopropyl alcohol
- exposure amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000010894 electron beam technology Methods 0.000 claims abstract description 15
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 14
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 14
- 230000035945 sensitivity Effects 0.000 abstract description 18
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000003960 organic solvent Substances 0.000 abstract description 2
- 230000018109 developmental process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は電子ビーム露光を用いた微細パターン形成方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method of forming fine patterns using electron beam exposure.
従来例の構成とその問題点
半導体素子の微細化が進むにつれて、電子ビーム露光を
用いたパターン形成が行われている。この場合、パター
ン形成の解像度は、電子ビーム露光そのものに起因する
問題とレジストに起因する問題とにより制限される。と
りわけ、レジストに起因する解像度の劣化についてみる
と、第１図に理想的な特性を持つポジ形レジストの感度
曲線と実際のものの感度曲線とで示されるように、実際
のものには露光量によって、解像度の低下がみられる。Conventional Structures and Problems With the progress in miniaturization of semiconductor devices, pattern formation using electron beam exposure is being performed. In this case, the resolution of patterning is limited by problems caused by the electron beam exposure itself and by problems caused by the resist. In particular, when looking at the deterioration of resolution caused by the resist, as shown in Figure 1, which shows the sensitivity curve of a positive resist with ideal characteristics and the sensitivity curve of the actual resist, there is a difference in resolution depending on the exposure amount. , a decrease in resolution is observed.
このような理想的な特性を持つレジストを用いて、電子
ビーム露光、現像を行うと、一定貫光量の範囲では、′
＠２図（＆）に示すように、基板１上のレジスト２に対
して、垂直な側壁を持った微細レジストパターン（開孔
）３を形成することができる筈であるが、実際のレジス
トは、第１図の点線で示すような感度曲線を持っている
ため、電子ビーム露光、現像後のレジストパターン（開
孔）３′は、第２図Ｔｏｌに示すように、理想的な場合
に比べて、太くしかも側壁がななめになってしまう。When electron beam exposure and development are performed using a resist with such ideal characteristics, within a certain amount of light penetration, ′
@2 As shown in Figure (&), it should be possible to form a fine resist pattern (opening) 3 with vertical sidewalls on the resist 2 on the substrate 1, but the actual resist is , has a sensitivity curve as shown by the dotted line in Figure 1, so the resist pattern (opening) 3' after electron beam exposure and development is smaller than the ideal case, as shown in Figure 2 Tol. It's thick and the side walls are slanted.
第３図に、ＰＭＭム（ポリメチルメタクリレート）の感
度曲線を示す。ＰＭＭ人は、現存するレジストの中で最
も高解像度であるが、その場合でも、この図に示すよう
に、肩の部分が丸い感度曲線特性を持つ。ここで、現像
液としては、ＩＰ人／ＭＩＢＫ（インプロピルアルコー
ル／メチルイソブチルケトン）＝１／３を用いている。FIG. 3 shows the sensitivity curve of PMM (polymethyl methacrylate). PMM has the highest resolution among existing resists, but even in that case it has a sensitivity curve with rounded shoulders, as shown in this figure. Here, the developer used is IP/MIBK (impropyl alcohol/methyl isobutyl ketone)=1/3.
以上に述べたように、現存する電子ビームレジストおよ
び現像方法を用いる場合、理想的なレジストの感度曲線
に比べて特性が悪いので、微細なレジストパターンを形
成することが困難であった。As described above, when using existing electron beam resists and development methods, it has been difficult to form fine resist patterns because the characteristics are poor compared to the sensitivity curve of an ideal resist.
発明の目的
本発明は、以上の問題を解決するものであり、理想的な
レジストの感度曲線に近い特性を実現し、超微細なレジ
ストパターンを形成することを目的としている。OBJECTS OF THE INVENTION The present invention solves the above problems, and aims to realize characteristics close to the ideal resist sensitivity curve and form an ultra-fine resist pattern.
発明の構成
本発明は、ポジ形電子ビームレジストを、多露光量で露
光した後、イソプロピルアルコールのみを用いて現像す
る、パターン形成方法であり、これにより、超微細パタ
ーンの形成を可能にしたものである。Structure of the Invention The present invention is a pattern forming method in which a positive electron beam resist is exposed with a large amount of light and then developed using only isopropyl alcohol, thereby making it possible to form ultra-fine patterns. It is.
八
実施例の説明
ＰＭＭムの場合を例として本発明の実施例について説明
する。第４図に、本発明を用いた場合のＰＭＭムの感度
曲線を示す。シリコン基板上に、ＰＭＭムを０．５ Ａ
ｍ塗布し、１７０℃、３０分間プリベークした後、電子
ビーム露光を行い、イソプロピルアルコールを用いて現
像を行った。8. Description of Embodiments Embodiments of the present invention will be described using a PMM system as an example. FIG. 4 shows a sensitivity curve of a PMM using the present invention. PMM was applied at 0.5 A on a silicon substrate.
After prebaking at 170° C. for 30 minutes, electron beam exposure was performed, and development was performed using isopropyl alcohol.
本発明によるＰＭＭムの感度曲線は、第３図に示す従来
例と比べて、２つの点で理想的な感度曲線に近い。第１
は、規格化残存膜厚が０となるときの曲線の傾きｒが高
いことであり、第２は感度曲線の肩の部分がより直角に
近いことである。従来例の第３図の場合では、ｒ＝６．
０であるのに対し、第４図示の特性の本発明の場合では
ｒ ＝ ａ、。The sensitivity curve of the PMM according to the present invention is closer to the ideal sensitivity curve in two respects than that of the conventional example shown in FIG. 1st
The second reason is that the slope r of the curve when the normalized residual film thickness becomes 0 is high, and the second reason is that the shoulder portion of the sensitivity curve is closer to a right angle. In the case of the conventional example shown in FIG. 3, r=6.
0, whereas in the case of the present invention with the characteristics shown in FIG. 4, r = a.
である。It is.
次に感度について考える。第３図かられかるように従来
例における感度が９０μａ７ｄであるのに対し、本発明
における感度は第４図に示すように１６０μａ／ｃｄで
ある。よって従来例の２倍以上の露光量で電子ビーム露
光を行うことにより、パタ ゛−ン形成が可能で
ある。実際例として、シリコン基板上に、０．５μｍの
厚さでＰＭＭムを塗布し、プリベータ後、６．４ Ｘ
１０ Ｃ／３の露光量て線露光し、イソプロピルアルコ
ールで現像することにより、パターン幅１００ηｍ以下
の側壁が垂直なレジストパターンを形成することができ
た。Next, let's consider sensitivity. As shown in FIG. 3, the sensitivity in the conventional example is 90 μa/cd, whereas the sensitivity in the present invention is 160 μa/cd, as shown in FIG. Therefore, a pattern can be formed by performing electron beam exposure with an exposure dose that is more than twice that of the conventional example. As a practical example, a PMM film was coated on a silicon substrate to a thickness of 0.5 μm, and after pre-bathing, a 6.4×
By performing line exposure at an exposure dose of 10 C/3 and developing with isopropyl alcohol, a resist pattern with a pattern width of 100 ηm or less and vertical side walls could be formed.
なお、本発明はＰＭＭムを例として説明したが、イソプ
ロピルアルコールを含む現像液を用いる、他の電子ビー
ムレジスト、ＦＢＭ、ＩＥＢＲ−９などにも応用するこ
とができる。Although the present invention has been described using PMM as an example, it can also be applied to other electron beam resists, FBM, IEBR-9, etc. that use a developer containing isopropyl alcohol.
発明の効果
以上に詳述したように、本発明は、インプロピルアルコ
ールと他の有機溶済との混合液を現像液として用いるポ
ジ形電子ビームレジストを、前記現像液を用いる場合の
露光量に比較して２倍以上の露光量で露光した後、イソ
プロピルアルコールを用いて現像するパターン形成方法
であって、本発明を用いることにより、理想的な特性に
近い感度曲線を実現し、超微細レジストパターンを形成
することができる。Effects of the Invention As detailed above, the present invention provides a positive electron beam resist that uses a mixture of inpropyl alcohol and other organic solvent as a developer, with the exposure amount being adjusted to the same amount as when using the developer. This is a pattern forming method in which a pattern is formed using isopropyl alcohol after being exposed with an exposure dose that is more than twice that of the conventional one. A pattern can be formed.
！！１図はポジ形レジストの感度曲線図、第２図ｆｌＬ
ｌ 、 （ｂｌは従来例のレジスト断面形状図、第３図
は従来例によるＰＭＭ人の感度曲線図、第４図は本発明
によるＰＭＭムの感度曲線図である。
１・・・・・・半導体基板、２・・・・・・ＰＭＭ人（
レジスト）、３．３′・・・・・・レジストパターンＣ
開孔）。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図
筒３図
傾１丸量 （１’ｃ／ｃｍｌン! ! Figure 1 is a sensitivity curve diagram of positive resist, Figure 2 flL
l, (bl is a resist cross-sectional shape diagram of a conventional example, FIG. 3 is a sensitivity curve diagram of a PMM person according to a conventional example, and FIG. 4 is a sensitivity curve diagram of a PMM person according to the present invention. 1... Semiconductor substrate, 2...PMM person (
resist), 3.3'...Resist pattern C
open hole). Name of agent: Patent attorney Toshio Nakao and 1 other person 1st
Fig. 2 Fig. Tube 3 Inclination 1 round amount (1'c/cml)
Claims (3)
た後、イソプロピルアルコールのみで現像する工程をそ
なえたパターン形成方法。(1) A pattern forming method comprising the steps of exposing a positive electron beam resist at multiple exposure doses and then developing it only with isopropyl alcohol.
レート（ＰＭＭＡ）でなる特許請求の範囲第１項に記載
のパターン形成方法。(2) The pattern forming method according to claim 1, wherein the positive electron beam resist is polymethyl methacrylate (PMMA).
求の範囲第１項または第２項に記載のパターン形成方法
。(3) The pattern forming method according to claim 1 or 2, wherein the exposure amount is 160 μc/cm^2 or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19287584A JPS6170719A (en) | 1984-09-14 | 1984-09-14 | Method of forming pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19287584A JPS6170719A (en) | 1984-09-14 | 1984-09-14 | Method of forming pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6170719A true JPS6170719A (en) | 1986-04-11 |
| JPH0449936B2 JPH0449936B2 (en) | 1992-08-12 |
Family
ID=16298424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19287584A Granted JPS6170719A (en) | 1984-09-14 | 1984-09-14 | Method of forming pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6170719A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5290269A (en) * | 1976-01-23 | 1977-07-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for fine resist patterns |
| JPS5330330A (en) * | 1976-09-01 | 1978-03-22 | Fujitsu Ltd | Developing liquid for radiant ray resist |
| JPS5397426A (en) * | 1977-02-04 | 1978-08-25 | Nippon Telegr & Teleph Corp <Ntt> | Development process for methylmethacrylate-methacrylic acid p (mma-ma) resi st |
-
1984
- 1984-09-14 JP JP19287584A patent/JPS6170719A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5290269A (en) * | 1976-01-23 | 1977-07-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for fine resist patterns |
| JPS5330330A (en) * | 1976-09-01 | 1978-03-22 | Fujitsu Ltd | Developing liquid for radiant ray resist |
| JPS5397426A (en) * | 1977-02-04 | 1978-08-25 | Nippon Telegr & Teleph Corp <Ntt> | Development process for methylmethacrylate-methacrylic acid p (mma-ma) resi st |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0449936B2 (en) | 1992-08-12 |
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