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JPS61276320A - Photoresist exposure device - Google Patents

Photoresist exposure device

Info

Publication number
JPS61276320A
JPS61276320A JP60118030A JP11803085A JPS61276320A JP S61276320 A JPS61276320 A JP S61276320A JP 60118030 A JP60118030 A JP 60118030A JP 11803085 A JP11803085 A JP 11803085A JP S61276320 A JPS61276320 A JP S61276320A
Authority
JP
Japan
Prior art keywords
photoresist
modulator
argon laser
amplitude
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60118030A
Other languages
Japanese (ja)
Inventor
Susumu Sato
進 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60118030A priority Critical patent/JPS61276320A/en
Publication of JPS61276320A publication Critical patent/JPS61276320A/en
Pending legal-status Critical Current

Links

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacturing Optical Record Carriers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent insufficient exposure by providing a detector for detecting the emitting power of a laser and a controller for controlling the amplitude of a rectangular signal input to a modulator when emitting a modulated argon laser beam to a photoresist while relatively moving the photoresist applied on a support. CONSTITUTION:A laser light from an argon laser 1 is emitted and through a condensing lens 3 to a photoresist 4 applied on a support such as a glass disk while relatively rotating, and the receipt 4 is formed by developing into the prescribed pattern. In this structure, a detector 5, a modulator 2 and an amplitude compensator 6' are provided between the laser 1 and the lens 3, a beam reflected by a half mirror 51 in the detector 5 is detected by a photodiode 52, compared with the prescribed value, and a compensation signal C is fed from an auxiliary signal output circuit 53 to the compensator 6' when the beam is lower than the prescribed value. An output from the compensator 6' is applied through a supersonic modulator 21 in the modulator 2 to an acoustic optical modulator 22, ad the reduction in the radiating power is compensated by the output.

Description

【発明の詳細な説明】 〔概要〕 振幅変調されたアルゴンレーザビームによってフォトレ
ジスト(感光性膜)を選択的に露光するフォトレジスト
露光装置であって、アルゴンレーザの瞬時的な放射パワ
ーの減少を補償するように構成することによって、露光
精度を向上した。
[Detailed Description of the Invention] [Summary] A photoresist exposure apparatus that selectively exposes a photoresist (photosensitive film) with an amplitude-modulated argon laser beam, which reduces the instantaneous radiation power of the argon laser. Exposure accuracy was improved by compensating the structure.

〔産業上の利用分野〕[Industrial application field]

本発明は、光デイスク用のフォトレジスト原盤の製造等
に用いるフォトレジスト露光装置に関するものである。
The present invention relates to a photoresist exposure apparatus used for manufacturing photoresist masters for optical disks.

たとえば、光ディスクの成形加工に使用されるスタンパ
−(金型)は、ガラス等の円板上に塗布したポジ型のフ
ォトレジストを、記録情報によって振幅変調されたレー
ザビームをスパイラル状ニ相対移動させながら照射し、
これを現像液によって処理し露光部分を熔解除去するこ
とによって一次母型であるフォトレジスト原盤を作り9
次に一次母型からメッキ等の処理によって作られる。
For example, a stamper (mold) used in the molding process of optical discs moves a positive photoresist coated onto a disk of glass or the like in a spiral manner using a laser beam whose amplitude is modulated according to recorded information. irradiate while
By treating this with a developer and melting and removing the exposed portion, a photoresist master, which is a primary matrix, is made 9
Next, it is made from the primary matrix through processes such as plating.

前記レーザビームには波長および出力等の理由から、一
般にアルゴンレーザビームが用いられている。
As the laser beam, an argon laser beam is generally used for reasons such as wavelength and output.

ところが、アルゴンレーザには、一時的にたとば200
μsにわたって放射パワーが50〜80%に低下する現
象、いわゆるドロップアウトを生ずることがあるが、こ
れを完全に防止することは現状では非常に困難である。
However, the argon laser temporarily has a
A so-called dropout, which is a phenomenon in which the radiation power decreases by 50 to 80% over μs, may occur, but it is currently extremely difficult to completely prevent this.

したがって、光源としてアルゴンレーザを用いるフォト
レジスト露光装置においては、ドロップアウトるよる製
品不良の発生を防止できるように構成されていることが
望ましい。
Therefore, it is desirable that a photoresist exposure apparatus using an argon laser as a light source be configured to prevent product defects due to dropouts.

〔従来の技術〕[Conventional technology]

第3図は光デイスク用のフォトレジスト原盤の製造に用
いられるフォトレジスト露光装置の従来例の構成図であ
り。
FIG. 3 is a block diagram of a conventional example of a photoresist exposure apparatus used for manufacturing a photoresist master disk for an optical disk.

1はアルゴンレーザ。1 is an argon laser.

2はアルゴンレーザ1が放射したレーザビームを矩形波
信号によって振幅変調す、る変調部。
2 is a modulation unit that modulates the amplitude of the laser beam emitted by the argon laser 1 using a rectangular wave signal.

3は集光レンズ。3 is a condensing lens.

4はガラス円板等の基盤(図示省略)上に塗布されたフ
ォトレジストである。
4 is a photoresist coated on a substrate (not shown) such as a glass disk.

なお変調部2は、書込み信号に相当する一定振幅の矩形
波状のアナログ信号Aによって、たとえば30メガヘル
ツの超音波信号を振幅変調して出力する超音波変調器2
1と、超音波変調器21の出力Bによってレーザビーム
を変調する音響光学変調器(AOM) 22とから構成
されている。
The modulation unit 2 is an ultrasonic modulator 2 that amplitude-modulates, for example, a 30 MHz ultrasonic signal using a rectangular-wave analog signal A with a constant amplitude corresponding to a write signal and outputs the amplitude-modulated ultrasonic signal.
1, and an acousto-optic modulator (AOM) 22 that modulates a laser beam with the output B of the ultrasonic modulator 21.

フォトレジスト4は、ガラス円板とともに図示省略の駆
動モータによって所定の定速で回転され。
The photoresist 4 is rotated together with the glass disk at a predetermined constant speed by a drive motor (not shown).

一方、変調器2によって変調され集光レンズ3によって
集光されたレーザビームは9図示省略の偏向装置によっ
てガラス円板の半径方向に所定の速度で偏向される。
On the other hand, the laser beam modulated by the modulator 2 and condensed by the condensing lens 3 is deflected in the radial direction of the glass disk at a predetermined speed by a deflection device 9 (not shown).

その結果、ガラス円板上のフォトレジストが。As a result, the photoresist on the glass disk.

スパイラル状の線に沿って選択的に露光され、これを現
像剤によって処理することによって一次母型が作られる
A primary matrix is created by selectively exposing the spiral to light and treating it with a developer.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

前記構成の装置において、露光に長時間たとえば1時間
以上を要することが少なくなく、一方。
In the apparatus having the above configuration, it is not uncommon for exposure to take a long time, for example, one hour or more.

アルゴンレーザのドロップアウトは数時間に1回の割合
で発生する。
Argon laser dropouts occur once every few hours.

このため、たとえば数枚につき1枚の割合でフォトレジ
スト原盤に不良が発生するため製造原価が増大するとい
う問題点がある。
For this reason, there is a problem in that, for example, one out of several photoresist masters is defective, which increases manufacturing costs.

したがって2本発明の目的は、ドロップアウトるよる製
品不良の発生を防止できるフォトレジスト露光装置を提
供することにある。
Therefore, two objects of the present invention are to provide a photoresist exposure apparatus that can prevent product defects due to dropouts.

〔問題点を解決するための手段〕[Means for solving problems]

第1図は本発明の原理図であり。 FIG. 1 is a diagram showing the principle of the present invention.

5はアルゴンレーザ1の放射パワーを検出する検出部。5 is a detection unit that detects the radiation power of the argon laser 1;

6は、変調部2に入力される矩形波信号の振幅Aを、検
出部5の検出値によって制御する制御部である。
Reference numeral 6 denotes a control unit that controls the amplitude A of the rectangular wave signal input to the modulation unit 2 based on the detection value of the detection unit 5.

〔作用〕[Effect]

すなわち、アルゴンレーザ1の放射パワーを検出部5に
よって検出し、たとえば検出値が所定値以下に低下した
場合には、変調部2に入力される矩形波信号の振幅を増
加し変調部2の変調出力を増大することによって、ドロ
ップアウトによる露光不足を防止するものである。
That is, the radiation power of the argon laser 1 is detected by the detection section 5, and if the detected value drops below a predetermined value, for example, the amplitude of the rectangular wave signal input to the modulation section 2 is increased and the modulation section 2 is modulated. By increasing the output, underexposure due to dropout is prevented.

〔実施例〕〔Example〕

第2図は実施例の構成図であり。 FIG. 2 is a configuration diagram of the embodiment.

検出部5は、半透鏡(ハーフミラ−) 51と、半透鏡
51によって反射されたレーザビームを受光するフォト
ダイオード52と、フォトダイオード52によって検出
された検出値を所定値と比較し、所定値を下回っている
あいだ性償信号Cを出力する性償信号出力回路53とか
ら構成し。
The detection unit 5 includes a half-mirror 51, a photodiode 52 that receives the laser beam reflected by the semi-transparent mirror 51, and compares the detection value detected by the photodiode 52 with a predetermined value, and determines the predetermined value. and a sexual compensation signal output circuit 53 which outputs a sexual compensation signal C while the voltage is below the level.

制御部6は、書込み信号として与えられる一定振幅の矩
形波状のアナログ信号Aの振幅を、補償信号Cに応じて
補償する振幅補償回路6′によって構成している。
The control section 6 includes an amplitude compensation circuit 6' that compensates the amplitude of a rectangular wave analog signal A having a constant amplitude given as a write signal in accordance with a compensation signal C.

すなわち、ドロップアウトによってアルゴンレーザ1の
放射パワーが減少したとき、超音波変調器21に入力さ
れる矩形波の振幅を増大させることによって、音響光学
変調器22の出力を増大させるものである。
That is, when the radiation power of the argon laser 1 decreases due to dropout, the output of the acousto-optic modulator 22 is increased by increasing the amplitude of the rectangular wave input to the ultrasonic modulator 21.

(発明の効果) 以上説明したように1本発明によればドロップアウトに
よるアルゴンレーザの放射パワーの減少を変調部2によ
って補償することができるので。
(Effects of the Invention) As explained above, according to the present invention, the decrease in the radiation power of the argon laser due to dropout can be compensated for by the modulator 2.

フォトレジストの露光においてドロップアウトによる製
品不良の発生を防止することができる。
It is possible to prevent product defects due to dropouts during photoresist exposure.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の原理図。 第2図は実施例の構成図。 第3図は従来例の構成図であり。 図中。 1はアルゴンレーザ、  2は変調部。 3は集光レンズ、    4はフォトレジスト。 5は検出部、      6は制御部。 21は超音波変調器、22は音響光学変調器。 本曙本姐の釆題韻 第 1 岨 界 2 口 FIG. 1 is a diagram showing the principle of the present invention. FIG. 2 is a configuration diagram of the embodiment. FIG. 3 is a configuration diagram of a conventional example. In the figure. 1 is an argon laser, 2 is a modulation section. 3 is a condenser lens, 4 is a photoresist. 5 is a detection unit, and 6 is a control unit. 21 is an ultrasonic modulator, and 22 is an acousto-optic modulator. Hon Akebono's title rhyme No. 1 岨 Kai 2 mouths

Claims (1)

【特許請求の範囲】 アルゴンレーザビームを放射するアルゴンレーザ(1)
と、 前記アルゴンレーザビームを矩形波信号によって振幅変
調する変調部(2)とを備え、 支持体上に塗布されたフォトレジスト(4)を相対的に
移動させながら前記変調されたアルゴンレーザビームに
よって照射し選択的に露光するフォトレジスト露光装置
において、 アルゴンレーザ(1)の放射パワーを検出する検出部(
5)と、 変調部(2)に入力される矩形波信号の振幅を検出部(
5)の検出値によって制御する制御部(6)とを設けた
ことを特徴とするフォトレジスト露光装置。
[Claims] Argon laser (1) that emits an argon laser beam
and a modulation unit (2) that modulates the amplitude of the argon laser beam using a rectangular wave signal, the modulating unit (2) modulating the amplitude of the argon laser beam using the modulated argon laser beam while relatively moving the photoresist (4) coated on the support. In a photoresist exposure device that irradiates and selectively exposes light, a detection unit (
5), and a detection unit (
5) A photoresist exposure apparatus characterized by comprising a control section (6) that performs control based on the detected value of step 5).
JP60118030A 1985-05-31 1985-05-31 Photoresist exposure device Pending JPS61276320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60118030A JPS61276320A (en) 1985-05-31 1985-05-31 Photoresist exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60118030A JPS61276320A (en) 1985-05-31 1985-05-31 Photoresist exposure device

Publications (1)

Publication Number Publication Date
JPS61276320A true JPS61276320A (en) 1986-12-06

Family

ID=14726318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60118030A Pending JPS61276320A (en) 1985-05-31 1985-05-31 Photoresist exposure device

Country Status (1)

Country Link
JP (1) JPS61276320A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996007954A1 (en) * 1994-09-09 1996-03-14 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Microstructures and methods for manufacturing microstructures

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996007954A1 (en) * 1994-09-09 1996-03-14 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Microstructures and methods for manufacturing microstructures

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