JPS60260861A - Probe - Google Patents

Abstract

PURPOSE:To transmit a signal of high frequency and high speed without distortion, and to inspect a semiconductor pellet of high frequency and high speed by structuring the part extending to the tip of a probe by a micro strip line. CONSTITUTION:A micro strip line is formed by constituting one face of a base film 6 of a ground electric conductor, and providing a signal wire 7 on the other face. A dam 10 consisting of an organic substance is formed in the tip of a probe, namely, a contact part with a semiconductor pellet, and a contactor 9 is formed adjacently to said dam. The other end of the probe is connected to a probe card 2 consisting of a strip line structure. When executing an inspection, a force is applied to the probe part by using a probe holding jig 13 from the upper part of the probe, and the probe is brought into contact with a semiconductor pellet to be measure 1. In this case, the force applied to a terminal electrode 5 of the semiconductor pellet can be adjusted by adjusting the applied force of the probe holding jig 13.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a probe for inspecting semiconductor pellets.

[Background of the invention]

For quality control of semiconductor elements such as ICs and LSIs, inspection is performed in the pellet state, and a probe is used as a jig to electrically connect a measuring device and the semiconductor pellet. Figure 1 shows the conventional probing method, where 1 is a semiconductor pellet to be measured, 2 is a probe card, and 3
is a probe made of tungsten steel or the like.

The probe 5 is connected to the wiring 4 of the glove card 2 by solder or the like, and the probe card and the probe move up and down as one, thereby making contact with the electrodes of the semiconductor pellet. This type of conventional probing method has the disadvantage that it cannot be used for probing high-frequency devices such as microwave transistors, or high-speed devices that handle high-speed nozzles, because the probe has self-inductance electrically. there were.

[Purpose of the invention]

An object of the present invention is to provide a high frequency and high speed semiconductor Herrett knob roving method.

[Summary of the invention]

It is known that if a signal is transmitted with the same characteristic impedance as the input/output impedance z0 of the measuring instrument, the signal will not be distorted. Therefore, the characteristic impedance z0 up to the probe
It is formed by a transmission line.

[Embodiments of the invention]

An embodiment of the present invention will be described below with reference to the drawings. Second
3 is a schematic cross-sectional view of the present invention, FIG. 3 is a view of only the probe portion viewed from the bottom of FIG. 2, and FIG. 4 is a cross-sectional view of the wiring portion of the globe portion. The probe section basically consists of a double-sided copper-clad flexible printed board with a polyimide film or the like as a base film.In other words, the base film 60 has a grounding conductor 8 on one side and signal transmission wiring 7 on the other side. forming a strip line. The characteristic impedance 2° of this transmission line is the thickness of the base film 6, the relative dielectric constant is εr, and the width of the wiring 7 is W.
It is given by the following formula.

Here, εr−Hεr−1 εre−2+ 2 (1+10%) −172 Now, assuming that the thickness of the polyimide base film is 100 μm, z
If 0s++soΩ, W becomes approximately 200μ.

A dam 10 made of an organic material is formed at the tip of the probe part, that is, a contact part with the semiconductor pellet, and a contact 9 is formed adjacent to the dam 10.

This contact is formed by selectively plating a metal such as copper, adhering a metal workpiece such as tungsten steel by soldering, or adhering a solder ball or the like. The last example is a method used in the solder fusion connection method for 7-lip chips, in which contacts are formed by the surface tension of the solder. All you have to do is slightly touch the tips of all the contacts to a flat object that cannot be wetted by the liquid.

The other end of the probe section is connected to a probe card 2 having a stripline structure. That is, the ground conductor 8 of the probe section is connected to the ground conductor 12 of the probe card, and the signal lines 7 and 11 are connected. Here, a coaxial line 15 such as a semi-rigid cable mechanically fixed to the cylindrical body 14 as shown in FIG. 5 together with the probe card may be used instead of the globe card.

The method of bringing this glove into contact with the semiconductor pellet 1 to be measured is to use a jig 13 for holding the probe from above the probe part.
This is achieved by applying force to the glove part. At this time, since the probe section is made of a flexible substrate, the force applied to the terminal electrode 5 of the semiconductor pellet can be adjusted by adjusting the applied force of the probe holding jig 13.

In the above description, the transmission line of the probe card has a strip line structure, but as shown in FIG. 6, it can also have a strip line structure. Here, 16.
17 is a base film, 7 is a signal wiring, and 18 and 19 are ground conductors, which are connected to the center conductor and outer conductor of the coaxial line, respectively.

〔Effect of the invention〕

As described above, according to the present invention, it is possible to have an IJ tube line structure up to the tip of the probe.
High frequency and high speed signals can be transmitted without distortion. In other words, in the past, it was only possible to measure pulses with a frequency of several 10 ns and a rise time of around 10 ns, but according to the present invention, it is now possible to measure pulses with a frequency of several 100 ns and a rise time of around 1 ns. It is possible to achieve higher speeds and frequencies of more than one order of magnitude. Further, since the wiring width can be reduced to around 100 μm, it has the advantage that a multi-pin LSI probe with many terminal electrodes can be easily obtained.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing a conventional probe, FIG. 2 is a cross-sectional schematic diagram showing a probe according to an embodiment of the present invention, FIG. 6 is a bottom view of the probe section, and FIG. 4 is a cross-sectional diagram of the wiring section. FIG. 5 is a sectional view using a coaxial line as a probe card, and FIG. 6 is a sectional view of another embodiment of the present invention. 6...Base film, 7...Signal wiring, 8...Grounding conductor, 9...Contactor. Representative Patent Attorney Akira Takahashi Figure 7 Figure 2 9 21″3 Figure O 4 Rescript

Claims (1)

[Claims] 1. A probe characterized in that a ground conductor is arranged on one side of a base film and a signal wiring is arranged on the other side to form a microstrip line structure, and a contact is formed at the tip of the signal wiring.