JPS60223120A - Developer - Google Patents
DeveloperInfo
- Publication number
- JPS60223120A JPS60223120A JP7848984A JP7848984A JPS60223120A JP S60223120 A JPS60223120 A JP S60223120A JP 7848984 A JP7848984 A JP 7848984A JP 7848984 A JP7848984 A JP 7848984A JP S60223120 A JPS60223120 A JP S60223120A
- Authority
- JP
- Japan
- Prior art keywords
- hydroxide
- developer
- alkali
- developer according
- polyoxyethylene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は、レジストの現像液に係り、特に感度。[Detailed description of the invention] [Field of application of the invention] The present invention relates to a resist developer, and particularly to a resist developer.
解像性を向上させるのに好適な、現像液組成物に関する
。The present invention relates to a developer composition suitable for improving resolution.
従来の現像液は主成分のアルカリ成分のみで、添加物の
混入はほとんどなされていない。このため、現像条件の
最適化は、現像液濃度、現像液温度等をパラメータとし
て検討していたが、これでは、高感度化、高解像性の向
上は望めなかった。Conventional developing solutions contain only an alkaline component as a main component, and almost no additives are mixed in. For this reason, optimization of development conditions has been studied using parameters such as developer concentration, developer temperature, etc., but with this, it has not been possible to improve sensitivity and resolution.
本発明の目的は、添加物を加えた現像液で現像すること
によりレジストの感度、解像度を向上させることにある
。An object of the present invention is to improve the sensitivity and resolution of a resist by developing it with a developer containing additives.
現像液の主成分により、レジストの感度、解像度は向上
するが、その成分を固定すれば、成分濃度、現像温度を
変化させても、現像特性の向上は期待できなかった。そ
こで、現像液に添加物を加えることを検討した。その結
果アルカリ性現像液に非イオン性の物質を添加すること
により、感度、解像度ともに向上することがわかった。The sensitivity and resolution of the resist can be improved depending on the main components of the developer, but if the components are fixed, no improvement in the development characteristics can be expected even if the component concentration or development temperature is changed. Therefore, we considered adding additives to the developer. As a result, it was found that both sensitivity and resolution can be improved by adding a nonionic substance to the alkaline developer.
しかし、その原因は明らかではない。However, the cause is not clear.
以下、本発明の実施例を第１図により説明する。 Embodiments of the present invention will be described below with reference to FIG.
レジストにフェノール樹脂系を用い、このレジストをＳ
ｉウェハ上に約５００ｎｍ回転塗布し、８０℃、２０分
のプリベークをおこなった。このサンプルに、電子線描
画装置により２μｃ ／ ａｌ〜１００μｃ ／ ｃｄ
の間で照射量を変化させ描画した。A phenolic resin-based resist is used, and this resist is S
It was spin-coated onto an i-wafer to a thickness of about 500 nm, and prebaked at 80° C. for 20 minutes. This sample was coated with 2 μc/al to 100 μc/cd using an electron beam lithography device.
Drawing was done by changing the irradiation dose between the two.
つぎにこれをテトラメチルアンモニウムハイドロオキサ
イドの３％水溶液に、さらにポリオキシエチレン−ポリ
オキシプロピレン縮合物を０．５％添加した現像液で２
０秒間現像した。この時の現像液温度は１８℃である。Next, this was developed using a developer containing a 3% aqueous solution of tetramethylammonium hydroxide and an additional 0.5% polyoxyethylene-polyoxypropylene condensate.
Developed for 0 seconds. The developer temperature at this time was 18°C.
この結果を第１図に示す。第１図中の１は上記した本発
明になる現像液を用いた場合を示し、図中２の添加剤を
加えない現像液に比べ、感度は５０％、解像性を示すγ
値（島田溝−１［電子ビーム露光用レジストの種類と特
性」電子材料ｐ２８〜３４ １０，１９７９）は１０％
向上した。The results are shown in FIG. 1 in Figure 1 shows the case where the developer according to the present invention described above is used, and compared to 2 in the figure, a developer without additives, the sensitivity is 50% and the resolution is γ.
The value (Shimada Mizo-1 [Types and characteristics of resists for electron beam exposure] Electronic materials p28-34 10, 1979) is 10%
Improved.
つぎに、実施例１と同様の実施例においてアルカリ物質
を変えた場合を検討した。アルカリ物質として、テトラ
エチルアンモニウムハイドロオキサイド、テトラプロピ
ルアンモニウムハイドロオキサイド、テトラブチルアン
モニウムハイドロオキサイド、メチルトリエタノールア
ンモニウムハイドロオキサイドの水溶液を用い、これに
ポリオキジオエチレン−ポリオキシプロピレン縮合物を
添加しても同様な結果が得られた。また光露光において
も同様な結果が得られた。Next, a case in which the alkaline substance was changed in an example similar to Example 1 was investigated. The same result can be obtained by using an aqueous solution of tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, or methyltriethanolammonium hydroxide as the alkali substance, and adding a polyoxydioethylene-polyoxypropylene condensate to this. The results were obtained. Similar results were also obtained in light exposure.
以上の様に、現像液濃度、現像液温度による感度、解像
度の向上が得られなかったものが、本発明のように、ア
ルカリ性現像液に非イオン性物質のポリオキシエチレン
−ポリオキシプロピレン縮合物を添加して、現像するこ
とにより、感度で５０％、解像性を示すγ値で１０％向
上するようになった。As described above, the method of the present invention in which improvements in sensitivity and resolution were not obtained depending on developer concentration and developer temperature is the use of a polyoxyethylene-polyoxypropylene condensate, a nonionic substance, in an alkaline developer. By adding and developing, the sensitivity improved by 50% and the γ value, which indicates resolution, improved by 10%.
本発明によれば、感度で５０％、解像性を示すγ値で１
０％向上できるので、高感度、高解像性の現像液として
の効果がある。According to the present invention, the sensitivity is 50% and the γ value indicating resolution is 1
Since the improvement can be achieved by 0%, it is effective as a developing solution with high sensitivity and high resolution.
第１図は、レジストの感度、解像性を示す特性図である
。図中１は、本発明で、２は従来法を示第１頁の続き
＠発明者 大鉢 秀仁 国赫市競ケ窪
央研究所内FIG. 1 is a characteristic diagram showing the sensitivity and resolution of the resist. In the figure, 1 shows the present invention, and 2 shows the conventional method.Continuation of the first page @Inventor Hidehito Ohbachi Kokuho City Keigakubo Research Institute
Claims (1)
とを特徴とする、レジストの現像液。 ２、前記アルカリが、テトラメチルアンモニウムハイド
ロオキサイドであることを特徴とする特許請求の範囲第
１項記載の現像液。 ３、前記アルカリが、テトラエチルアンモニウムハイド
ロオキサイドであることを特徴とする特許請求の範囲第
１項記載の現像液。 ４、前記アルカリが、テトラプロピルアンモニウムハイ
ドロオキサイドであることを特徴とする特許請求の範囲
第１項記載の現像液。 ５、前記アルカリがテトラブチルアンモニウムハイドロ
オキサイドであることを特徴とする特許請求の範囲第１
項記載の現像液。 ６、前記アルカリが、メチルトリエタノールアンモニウ
ムハイドロオキサイドであることを特徴とする特許請求
の範囲第１項記載の現像液。 ７、前記非イオン性物質が、ポリオキシドエチレン−ポ
リオキシプロピレン縮合物であることを特徴とする特許
請求の範囲第１項記載の現像液。 ８、前記アルカリが、テトラメチルアンモニウムハイド
ロオキサイドで、前記非イオン性物質がポリオキシエチ
レン−ポリオキシプロピレン縮合物であることを特徴と
する特許請求の範囲第１項記載の現像液。 ９、前記アルカリが、テトラエチルアンモニウムハイド
ロオキサイドで、前記非イオン性物質がポリオキシエチ
レン−ポリオキシプロピレン縮合物であることを特徴と
する特許請求の範囲第１項記載の現像液。 １０、前記アルカリが、テトラプロピルアンモニウムハ
イドロオキサイドで、前記非イオン性物質がポリオキシ
エチレンーポリオキシブロビレン縮合物であることを特
徴とする特許請求の範囲第１項記載の現像液。 １１、前記アルカリが、テトラブチルアンモニウムハイ
ドロオキサイドで、前記非イオン°性物質がポリオキシ
エチレン−ポリオキシプロピレン縮合物であることを特
徴とする特許請求の範囲第１項記載の現像液。 １２、前記アルカリが、メチルトリエタノールアンモニ
ウムハイドロオキサイドで、前記非イオン性物質がポリ
オキシエチレン−ポリオキシプロピレン縮合物であるこ
とを特徴とする特許請求の範囲第１項記載の現像液。[Scope of Claims] 1. A resist developer characterized in that a nonionic substance is mixed into an alkaline aqueous solution. 2. The developer according to claim 1, wherein the alkali is tetramethylammonium hydroxide. 3. The developer according to claim 1, wherein the alkali is tetraethylammonium hydroxide. 4. The developer according to claim 1, wherein the alkali is tetrapropylammonium hydroxide. 5. Claim 1, wherein the alkali is tetrabutylammonium hydroxide.
Developer solution as described in section. 6. The developer according to claim 1, wherein the alkali is methyltriethanolammonium hydroxide. 7. The developer according to claim 1, wherein the nonionic substance is a polyoxide ethylene-polyoxypropylene condensate. 8. The developer according to claim 1, wherein the alkali is tetramethylammonium hydroxide, and the nonionic substance is a polyoxyethylene-polyoxypropylene condensate. 9. The developer according to claim 1, wherein the alkali is tetraethylammonium hydroxide, and the nonionic substance is a polyoxyethylene-polyoxypropylene condensate. 10. The developer according to claim 1, wherein the alkali is tetrapropylammonium hydroxide, and the nonionic substance is a polyoxyethylene-polyoxybrobylene condensate. 11. The developer according to claim 1, wherein the alkali is tetrabutylammonium hydroxide, and the nonionic substance is a polyoxyethylene-polyoxypropylene condensate. 12. The developer according to claim 1, wherein the alkali is methyltriethanolammonium hydroxide, and the nonionic substance is a polyoxyethylene-polyoxypropylene condensate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7848984A JPS60223120A (en) | 1984-04-20 | 1984-04-20 | Developer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7848984A JPS60223120A (en) | 1984-04-20 | 1984-04-20 | Developer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60223120A true JPS60223120A (en) | 1985-11-07 |
Family
ID=13663386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7848984A Pending JPS60223120A (en) | 1984-04-20 | 1984-04-20 | Developer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60223120A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4784937A (en) * | 1985-08-06 | 1988-11-15 | Tokyo Ohka Kogyo Co., Ltd. | Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant |
| US4833067A (en) * | 1985-08-06 | 1989-05-23 | Tokyo Ohka Kogyo Co., Ltd. | Developing solution for positive-working photoresist comprising tmah and non-ionic surfactant |
| US4914006A (en) * | 1984-12-25 | 1990-04-03 | Kabushiki Kaisha Toshiba | Positive resist quaternary ammonium hydroxide containing developer with cationic and nonionic surfactant |
| US5030550A (en) * | 1988-04-07 | 1991-07-09 | Fuji Photo Film Co., Ltd. | Developer for positive type photoresists |
| US6432621B1 (en) | 1999-01-07 | 2002-08-13 | Kao Corporation | Resist developer |
| US6730239B1 (en) | 1999-10-06 | 2004-05-04 | Renesas Technology Corp. | Cleaning agent for semiconductor device & method of fabricating semiconductor device |
-
1984
- 1984-04-20 JP JP7848984A patent/JPS60223120A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4914006A (en) * | 1984-12-25 | 1990-04-03 | Kabushiki Kaisha Toshiba | Positive resist quaternary ammonium hydroxide containing developer with cationic and nonionic surfactant |
| US4784937A (en) * | 1985-08-06 | 1988-11-15 | Tokyo Ohka Kogyo Co., Ltd. | Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant |
| US4833067A (en) * | 1985-08-06 | 1989-05-23 | Tokyo Ohka Kogyo Co., Ltd. | Developing solution for positive-working photoresist comprising tmah and non-ionic surfactant |
| US5030550A (en) * | 1988-04-07 | 1991-07-09 | Fuji Photo Film Co., Ltd. | Developer for positive type photoresists |
| US6432621B1 (en) | 1999-01-07 | 2002-08-13 | Kao Corporation | Resist developer |
| US6730239B1 (en) | 1999-10-06 | 2004-05-04 | Renesas Technology Corp. | Cleaning agent for semiconductor device & method of fabricating semiconductor device |
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