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JPS6489320A - Vapor growth method - Google Patents

Vapor growth method

Info

Publication number
JPS6489320A
JPS6489320A JP24717687A JP24717687A JPS6489320A JP S6489320 A JPS6489320 A JP S6489320A JP 24717687 A JP24717687 A JP 24717687A JP 24717687 A JP24717687 A JP 24717687A JP S6489320 A JPS6489320 A JP S6489320A
Authority
JP
Japan
Prior art keywords
fed
tube
growth method
vapor growth
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24717687A
Other languages
Japanese (ja)
Inventor
Fumitoshi Toyokawa
Seiichi Shishiguchi
Masao Mikami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24717687A priority Critical patent/JPS6489320A/en
Priority to DE88115622T priority patent/DE3885833T2/en
Priority to EP88115622A priority patent/EP0308946B1/en
Priority to US07/247,850 priority patent/US4992301A/en
Publication of JPS6489320A publication Critical patent/JPS6489320A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To largely reduce the quantity of H2 without loss of the uniformity of thickness of a film and electric resistance by employing rare gas with silane series gas as carrier gas. CONSTITUTION:Si substrate 4 are mounted on a substrate holder 5, rotated, H2 is fed from a nozzle tube 7 and Ar is fed from a nozzle tube 8. A reaction tube is set to predetermined pressure and temperature, SiH2Cl2, B2H6 are fed from the tube 8 while the H2 and the Ar remain as they are, and Si is vapor epitaxially grown while maintaining the pressure in the reaction tube.
JP24717687A 1987-09-22 1987-09-29 Vapor growth method Pending JPS6489320A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP24717687A JPS6489320A (en) 1987-09-29 1987-09-29 Vapor growth method
DE88115622T DE3885833T2 (en) 1987-09-22 1988-09-22 Chemical vapor deposition apparatus for the production of high quality epitaxial layers with a uniform density.
EP88115622A EP0308946B1 (en) 1987-09-22 1988-09-22 Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness
US07/247,850 US4992301A (en) 1987-09-22 1988-09-22 Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24717687A JPS6489320A (en) 1987-09-29 1987-09-29 Vapor growth method

Publications (1)

Publication Number Publication Date
JPS6489320A true JPS6489320A (en) 1989-04-03

Family

ID=17159570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24717687A Pending JPS6489320A (en) 1987-09-22 1987-09-29 Vapor growth method

Country Status (1)

Country Link
JP (1) JPS6489320A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006501664A (en) * 2002-10-03 2006-01-12 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ Method and apparatus for forming an epitaxial layer
WO2011142055A1 (en) * 2010-05-14 2011-11-17 トヨタ自動車株式会社 Method for vapor-phase epitaxial growth of semiconductor film

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461463A (en) * 1977-10-26 1979-05-17 Toshiba Corp Vapor phase growth method for semiconductor
JPS5870831A (en) * 1981-10-21 1983-04-27 Hitachi Ltd Gas phase growing apparatus
JPS58128729A (en) * 1982-01-28 1983-08-01 Fujitsu Ltd Manufacture of semiconductor device
JPS60113921A (en) * 1983-11-25 1985-06-20 Hitachi Ltd Method for vapor-phase reaction and device thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461463A (en) * 1977-10-26 1979-05-17 Toshiba Corp Vapor phase growth method for semiconductor
JPS5870831A (en) * 1981-10-21 1983-04-27 Hitachi Ltd Gas phase growing apparatus
JPS58128729A (en) * 1982-01-28 1983-08-01 Fujitsu Ltd Manufacture of semiconductor device
JPS60113921A (en) * 1983-11-25 1985-06-20 Hitachi Ltd Method for vapor-phase reaction and device thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006501664A (en) * 2002-10-03 2006-01-12 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ Method and apparatus for forming an epitaxial layer
WO2011142055A1 (en) * 2010-05-14 2011-11-17 トヨタ自動車株式会社 Method for vapor-phase epitaxial growth of semiconductor film
JP2011243634A (en) * 2010-05-14 2011-12-01 Toyota Central R&D Labs Inc Method of growing semiconductor film in vapor phase
US8703590B2 (en) 2010-05-14 2014-04-22 Toyota Jidosha Kabushiki Kaisha Vapor-phase growth method for semiconductor film

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