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JPS574120A - Vapor phase growth of compound semiconductor - Google Patents

Vapor phase growth of compound semiconductor

Info

Publication number
JPS574120A
JPS574120A JP7819380A JP7819380A JPS574120A JP S574120 A JPS574120 A JP S574120A JP 7819380 A JP7819380 A JP 7819380A JP 7819380 A JP7819380 A JP 7819380A JP S574120 A JPS574120 A JP S574120A
Authority
JP
Japan
Prior art keywords
substrates
region
vapor phase
source
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7819380A
Other languages
Japanese (ja)
Inventor
Masaharu Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7819380A priority Critical patent/JPS574120A/en
Publication of JPS574120A publication Critical patent/JPS574120A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)

Abstract

PURPOSE:To obtain a vapor phase growth layer of a compound semiconductor having uniform film thickness when vapor phase epitaxial growth in a reaction limited region is to be performed by a method wherein a relatively high temperature region is provided being separated by 10cm or more from a substrates providing region being kept at a relatively low temperature, and after vapor phase etching gas is made to be generated at this place, the epitaxial layer are made to grow on the substrates in the lower stream of gas. CONSTITUTION:A container 2 of a Ga source is arranged at one side end part of a reaction tube 1 being surrounded the outer circumference thereof with a heater 6, a highly pure Ga source 3 is accomodated therein, an introducing tube 4 of AsCl3+ H2 gas protruding outside is connected to the source container 2, and an introducing tube 5 to send H2 gas directly into the reaction tube 1 is fitted up at this side. the GaAs substrates 7 put on a holder 8 are arranged in the lower stream of the source container 2 being separated by 10cm or more, the region of the source container 2 is provided at 800 deg.C, and the region of the substrates 7 is provided at 685+ or -0.5 deg.C, etc., and the GaAs layers are made to grow epitaxially on the substrates 7. Accordingly film thickness of the growth layer can be kept at uniform of about + or -6%, and characteristic of the semiconductor device is enhanced.
JP7819380A 1980-06-10 1980-06-10 Vapor phase growth of compound semiconductor Pending JPS574120A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7819380A JPS574120A (en) 1980-06-10 1980-06-10 Vapor phase growth of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7819380A JPS574120A (en) 1980-06-10 1980-06-10 Vapor phase growth of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS574120A true JPS574120A (en) 1982-01-09

Family

ID=13655153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7819380A Pending JPS574120A (en) 1980-06-10 1980-06-10 Vapor phase growth of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS574120A (en)

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