[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS6489569A - Solar cell element - Google Patents

Solar cell element

Info

Publication number
JPS6489569A
JPS6489569A JP62247626A JP24762687A JPS6489569A JP S6489569 A JPS6489569 A JP S6489569A JP 62247626 A JP62247626 A JP 62247626A JP 24762687 A JP24762687 A JP 24762687A JP S6489569 A JPS6489569 A JP S6489569A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
electrode
substrate
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62247626A
Other languages
Japanese (ja)
Inventor
Toru Nunoi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62247626A priority Critical patent/JPS6489569A/en
Publication of JPS6489569A publication Critical patent/JPS6489569A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To increase a photoelectric conversion efficiency within a semiconductor layer on the side to which light is applied, by a method wherein dopant diffusion with higher concentration than that at peripheries is provided to many partions and current is taken out from these partions via an electrode metal layer. CONSTITUTION:An N<+>-type semiconductor layer 2 with conduction opposite to that of a P-type semiconductor substrate 1 is formed on one surface of the substrate 1. A reflection prevention layer 5 is then formed over the whole surface of the N<+>-type semiconductor layer 2 and many several-mum-square holes are made therein. Then, high concentration N<++> semiconductor layer 9 is formed only on those portions where the holes are made by the N<+> semiconductor layer 2. An electrode part 4 is formed so as to electrically connect the holes 8 with the N<++> diffusion part 9, and an electrode layer 6 is then formed on the underside of the substrate 1. With this construction, the contact resistance of the electrode 4 on the light projection side with respect to the N<+> layer 2 can be greatly reduced, which reduces a surface recombination current on the N<+> layer 2 and enhances a photoelectric conversion efficiency.
JP62247626A 1987-09-30 1987-09-30 Solar cell element Pending JPS6489569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62247626A JPS6489569A (en) 1987-09-30 1987-09-30 Solar cell element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62247626A JPS6489569A (en) 1987-09-30 1987-09-30 Solar cell element

Publications (1)

Publication Number Publication Date
JPS6489569A true JPS6489569A (en) 1989-04-04

Family

ID=17166306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62247626A Pending JPS6489569A (en) 1987-09-30 1987-09-30 Solar cell element

Country Status (1)

Country Link
JP (1) JPS6489569A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03250671A (en) * 1990-01-31 1991-11-08 Sharp Corp Semiconductor photoelectric converting device and its manufacture
EP0908956A2 (en) * 1997-10-06 1999-04-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image sensor
WO2009150741A1 (en) * 2008-06-12 2009-12-17 三菱電機株式会社 Photovoltaic device manufacturing method
CN103515456A (en) * 2012-06-26 2014-01-15 Lg电子株式会社 Solar cell

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03250671A (en) * 1990-01-31 1991-11-08 Sharp Corp Semiconductor photoelectric converting device and its manufacture
EP0908956A2 (en) * 1997-10-06 1999-04-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image sensor
EP0908956A3 (en) * 1997-10-06 2000-02-02 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image sensor
US6150704A (en) * 1997-10-06 2000-11-21 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image sensor
EP1688998A2 (en) * 1997-10-06 2006-08-09 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image sensor
WO2009150741A1 (en) * 2008-06-12 2009-12-17 三菱電機株式会社 Photovoltaic device manufacturing method
CN103515456A (en) * 2012-06-26 2014-01-15 Lg电子株式会社 Solar cell
JP2014007382A (en) * 2012-06-26 2014-01-16 Lg Electronics Inc Solar cell
US10573767B2 (en) 2012-06-26 2020-02-25 Lg Electronics Inc. Solar cell

Similar Documents

Publication Publication Date Title
IL84217A (en) Heterojunction p-i-n photovoltaic cell
ES2102445T3 (en) PROCEDURE FOR OBTAINING A SOLAR CELL, AS WELL AS A SOLAR CELL.
JPS6453468A (en) Solar battery
JPS5752176A (en) Semiconductor device
FR2549642B1 (en) SOLAR CELL
JPS6445173A (en) Conductive modulation type mosfet
EP0481094A4 (en)
JPS6489569A (en) Solar cell element
JPS5511371A (en) Semiconductor laser system
JPS5736878A (en) Semiconductor photodetector
JPS56114384A (en) Solar battery
JPS6441278A (en) Manufacture of thin film photovoltaic element
JPS6482571A (en) Solar cell and manufacture thereof
JPS5556670A (en) Solar cell
JPS5745273A (en) Semiconductor device
JPS55162223A (en) Semiconductor device and its preparation
JPS6418293A (en) Semiconductor laser device
JPS57207381A (en) High-speed diode
JPS58157176A (en) Solar battery element
JPS6490568A (en) Solar cell
JPS55153385A (en) Current squeezing type semiconductor device
JPS56101779A (en) Schottky barrier diode
JPH0573357B2 (en)
JPS57128083A (en) Photoelectric converting device
JPS6414974A (en) Inverse conductive solar battery cell