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JPS5745273A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5745273A
JPS5745273A JP12050280A JP12050280A JPS5745273A JP S5745273 A JPS5745273 A JP S5745273A JP 12050280 A JP12050280 A JP 12050280A JP 12050280 A JP12050280 A JP 12050280A JP S5745273 A JPS5745273 A JP S5745273A
Authority
JP
Japan
Prior art keywords
type gaas
type
layer
gaas layer
evaporated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12050280A
Other languages
Japanese (ja)
Other versions
JPS6229892B2 (en
Inventor
Susumu Yoshida
Kotaro Mitsui
Takao Oda
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12050280A priority Critical patent/JPS5745273A/en
Publication of JPS5745273A publication Critical patent/JPS5745273A/en
Publication of JPS6229892B2 publication Critical patent/JPS6229892B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a GaAs solar battery with a higher efficiency of photoelectric conversion by increasing the diffusion depth of a P type GaAs layer in the portion for forming an ohmic contact. CONSTITUTION:A P type GaAs layer 2 is diffused into an N type GaAs substrate 1 to obtain a P-N junction 3 and a P type Ga1-XAlXAs layer 4 is formed thereon. Then, an antireflection film 5 is formed on the layer 4 and, successively the P type GaAs layer 2 is deeply diffused partially. The thickness of a P type GaAs layer 2a thus formed is thicker than that of the P type GaAs layer 2 at the bottom of the antireflection film 5. A P type ohmic electrode 6 is evaporated on said P type GaAs layer 2a whole an N type ohmic electrode 7 is evaporated on the back of the N type GaAs substrate 1. A solar battery thus obtained provides excellent characteristics of a open end voltage and a curve factor, hence high in the efficiency of photoelectric conversion.
JP12050280A 1980-08-29 1980-08-29 Semiconductor device Granted JPS5745273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12050280A JPS5745273A (en) 1980-08-29 1980-08-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12050280A JPS5745273A (en) 1980-08-29 1980-08-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5745273A true JPS5745273A (en) 1982-03-15
JPS6229892B2 JPS6229892B2 (en) 1987-06-29

Family

ID=14787778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12050280A Granted JPS5745273A (en) 1980-08-29 1980-08-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5745273A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159772A (en) * 1985-01-07 1986-07-19 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric conversion device
US5217539A (en) * 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
JPH0776338B2 (en) * 1990-04-20 1995-08-16 ベルクヴェルクスフェルバント ゲゼルシャフト ミット ベシュレンクテル ハフツング Carbonization chamber door for large coke ovens

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5317860A (en) * 1976-07-31 1978-02-18 Uni Cardan Ag Driving shaft joint for free angular motion

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5317860A (en) * 1976-07-31 1978-02-18 Uni Cardan Ag Driving shaft joint for free angular motion

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159772A (en) * 1985-01-07 1986-07-19 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric conversion device
JPH0776338B2 (en) * 1990-04-20 1995-08-16 ベルクヴェルクスフェルバント ゲゼルシャフト ミット ベシュレンクテル ハフツング Carbonization chamber door for large coke ovens
US5217539A (en) * 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes

Also Published As

Publication number Publication date
JPS6229892B2 (en) 1987-06-29

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