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JPS6477941A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6477941A
JPS6477941A JP23561287A JP23561287A JPS6477941A JP S6477941 A JPS6477941 A JP S6477941A JP 23561287 A JP23561287 A JP 23561287A JP 23561287 A JP23561287 A JP 23561287A JP S6477941 A JPS6477941 A JP S6477941A
Authority
JP
Japan
Prior art keywords
breakdown strength
strength element
element region
film
passivation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23561287A
Other languages
Japanese (ja)
Other versions
JP2554339B2 (en
Inventor
Shinji Minami
Yoshimi Tsuchiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62235612A priority Critical patent/JP2554339B2/en
Publication of JPS6477941A publication Critical patent/JPS6477941A/en
Application granted granted Critical
Publication of JP2554339B2 publication Critical patent/JP2554339B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To ensure the insulating properties of a high breakdown strength element, and to fine element pattern of a low breakdown strength element by thickening a passivation film on the high breakdown strength element region and thinning the passivation film on a low breakdown strength element region. CONSTITUTION:An silicon oxide film 25 coating the whole surface of the top face of an silicon substrate 10 is formed through a thermal oxidation method. A first passivation film 26 is deposited through a decompression chemical vapor growth method (an LPCVD method). A second passivation film 27 is deposited onto the whole surface of the top face of the film 26 through the LPCVD method. A section existing on a low breakdown strength element region 12 in the film 27 is removed completely. Aluminum wiring layers 33 electrically connected to a high breakdown strength element region 11 and the low breakdown strength element region 12 through contact holes 31, 32 are shaped.
JP62235612A 1987-09-19 1987-09-19 Semiconductor device and manufacturing method thereof Expired - Fee Related JP2554339B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62235612A JP2554339B2 (en) 1987-09-19 1987-09-19 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62235612A JP2554339B2 (en) 1987-09-19 1987-09-19 Semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPS6477941A true JPS6477941A (en) 1989-03-23
JP2554339B2 JP2554339B2 (en) 1996-11-13

Family

ID=16988586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62235612A Expired - Fee Related JP2554339B2 (en) 1987-09-19 1987-09-19 Semiconductor device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP2554339B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297532B1 (en) 1993-11-08 2001-10-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US8044487B2 (en) 2006-02-15 2011-10-25 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042844A (en) * 1983-08-18 1985-03-07 Nec Corp Semiconductor integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042844A (en) * 1983-08-18 1985-03-07 Nec Corp Semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297532B1 (en) 1993-11-08 2001-10-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US8044487B2 (en) 2006-02-15 2011-10-25 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing the same
DE102007007096B4 (en) * 2006-02-15 2017-08-24 Mitsubishi Electric Corp. Semiconductor device and method of making the same

Also Published As

Publication number Publication date
JP2554339B2 (en) 1996-11-13

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees