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JPS6474777A - Manufacture of micro-bridge type josephson device - Google Patents

Manufacture of micro-bridge type josephson device

Info

Publication number
JPS6474777A
JPS6474777A JP62232901A JP23290187A JPS6474777A JP S6474777 A JPS6474777 A JP S6474777A JP 62232901 A JP62232901 A JP 62232901A JP 23290187 A JP23290187 A JP 23290187A JP S6474777 A JPS6474777 A JP S6474777A
Authority
JP
Japan
Prior art keywords
micro
bridge type
sputtering
sidewall
approximately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62232901A
Other languages
Japanese (ja)
Inventor
Shoji Sakaitani
Kazuya Futaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP62232901A priority Critical patent/JPS6474777A/en
Publication of JPS6474777A publication Critical patent/JPS6474777A/en
Pending legal-status Critical Current

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To manufacture a micro-bridge type Josephson device easily only through an evaporation technique without requiring hyperfine working by forming superconductive films having film thickness of coherence length or less only on the sidewalls of first and second regions. CONSTITUTION:First and second rectangular regions 12, 13 composed of an insulating material such as Ta, Si or the like are shaped onto a substrate 11 through sputtering, etc. A first superconductive film 15 in layer thickness T2 of approximately 100Angstrom is evaporated obliquely onto the sidewall of the second rectangular region 13 through sputtering, etc., from the left direction. The angle of evaporation gamma1 at that time extends over 80 deg.-85 deg.. A second superconductive film 18 in layer thickness T3 of approximately 100Angstrom is evaporated obliquely onto the sidewall of the first rectangular region 12 through sputtering, etc., from the right direction. The angle of evaporation gamma2 at that time extends over 80 deg.-85 deg.. Consequently, thickness in the direction vertical to the sidewall is brought to 100Angstrom while length in the direction vertical to the surface of the substrate 11 is brought to approximately 150Angstrom in the superconductive films (shown in oblique lines), thus working such sections as micro-bridge type Josephson devices.
JP62232901A 1987-09-17 1987-09-17 Manufacture of micro-bridge type josephson device Pending JPS6474777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62232901A JPS6474777A (en) 1987-09-17 1987-09-17 Manufacture of micro-bridge type josephson device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62232901A JPS6474777A (en) 1987-09-17 1987-09-17 Manufacture of micro-bridge type josephson device

Publications (1)

Publication Number Publication Date
JPS6474777A true JPS6474777A (en) 1989-03-20

Family

ID=16946616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62232901A Pending JPS6474777A (en) 1987-09-17 1987-09-17 Manufacture of micro-bridge type josephson device

Country Status (1)

Country Link
JP (1) JPS6474777A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01184884A (en) * 1988-01-13 1989-07-24 Hitachi Ltd Production of weak coupling for superconducting element
JP2002266072A (en) * 2001-03-09 2002-09-18 Sumitomo Electric Ind Ltd Laminated film and film forming method
JP2017076720A (en) * 2015-10-15 2017-04-20 国立研究開発法人産業技術総合研究所 Manufacturing method for thermoelectric conversion module
WO2022118464A1 (en) * 2020-12-04 2022-06-09 日本電気株式会社 Quantum device and method for manufacturing same
WO2022118463A1 (en) * 2020-12-04 2022-06-09 日本電気株式会社 Quantum device and method for producing same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01184884A (en) * 1988-01-13 1989-07-24 Hitachi Ltd Production of weak coupling for superconducting element
JP2002266072A (en) * 2001-03-09 2002-09-18 Sumitomo Electric Ind Ltd Laminated film and film forming method
JP2017076720A (en) * 2015-10-15 2017-04-20 国立研究開発法人産業技術総合研究所 Manufacturing method for thermoelectric conversion module
WO2022118464A1 (en) * 2020-12-04 2022-06-09 日本電気株式会社 Quantum device and method for manufacturing same
WO2022118463A1 (en) * 2020-12-04 2022-06-09 日本電気株式会社 Quantum device and method for producing same

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