JPS6474777A - Manufacture of micro-bridge type josephson device - Google Patents
Manufacture of micro-bridge type josephson deviceInfo
- Publication number
- JPS6474777A JPS6474777A JP62232901A JP23290187A JPS6474777A JP S6474777 A JPS6474777 A JP S6474777A JP 62232901 A JP62232901 A JP 62232901A JP 23290187 A JP23290187 A JP 23290187A JP S6474777 A JPS6474777 A JP S6474777A
- Authority
- JP
- Japan
- Prior art keywords
- micro
- bridge type
- sputtering
- sidewall
- approximately
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000008020 evaporation Effects 0.000 abstract 3
- 238000001704 evaporation Methods 0.000 abstract 3
- 238000004544 sputter deposition Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
PURPOSE:To manufacture a micro-bridge type Josephson device easily only through an evaporation technique without requiring hyperfine working by forming superconductive films having film thickness of coherence length or less only on the sidewalls of first and second regions. CONSTITUTION:First and second rectangular regions 12, 13 composed of an insulating material such as Ta, Si or the like are shaped onto a substrate 11 through sputtering, etc. A first superconductive film 15 in layer thickness T2 of approximately 100Angstrom is evaporated obliquely onto the sidewall of the second rectangular region 13 through sputtering, etc., from the left direction. The angle of evaporation gamma1 at that time extends over 80 deg.-85 deg.. A second superconductive film 18 in layer thickness T3 of approximately 100Angstrom is evaporated obliquely onto the sidewall of the first rectangular region 12 through sputtering, etc., from the right direction. The angle of evaporation gamma2 at that time extends over 80 deg.-85 deg.. Consequently, thickness in the direction vertical to the sidewall is brought to 100Angstrom while length in the direction vertical to the surface of the substrate 11 is brought to approximately 150Angstrom in the superconductive films (shown in oblique lines), thus working such sections as micro-bridge type Josephson devices.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62232901A JPS6474777A (en) | 1987-09-17 | 1987-09-17 | Manufacture of micro-bridge type josephson device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62232901A JPS6474777A (en) | 1987-09-17 | 1987-09-17 | Manufacture of micro-bridge type josephson device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6474777A true JPS6474777A (en) | 1989-03-20 |
Family
ID=16946616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62232901A Pending JPS6474777A (en) | 1987-09-17 | 1987-09-17 | Manufacture of micro-bridge type josephson device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6474777A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01184884A (en) * | 1988-01-13 | 1989-07-24 | Hitachi Ltd | Production of weak coupling for superconducting element |
JP2002266072A (en) * | 2001-03-09 | 2002-09-18 | Sumitomo Electric Ind Ltd | Laminated film and film forming method |
JP2017076720A (en) * | 2015-10-15 | 2017-04-20 | 国立研究開発法人産業技術総合研究所 | Manufacturing method for thermoelectric conversion module |
WO2022118464A1 (en) * | 2020-12-04 | 2022-06-09 | 日本電気株式会社 | Quantum device and method for manufacturing same |
WO2022118463A1 (en) * | 2020-12-04 | 2022-06-09 | 日本電気株式会社 | Quantum device and method for producing same |
-
1987
- 1987-09-17 JP JP62232901A patent/JPS6474777A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01184884A (en) * | 1988-01-13 | 1989-07-24 | Hitachi Ltd | Production of weak coupling for superconducting element |
JP2002266072A (en) * | 2001-03-09 | 2002-09-18 | Sumitomo Electric Ind Ltd | Laminated film and film forming method |
JP2017076720A (en) * | 2015-10-15 | 2017-04-20 | 国立研究開発法人産業技術総合研究所 | Manufacturing method for thermoelectric conversion module |
WO2022118464A1 (en) * | 2020-12-04 | 2022-06-09 | 日本電気株式会社 | Quantum device and method for manufacturing same |
WO2022118463A1 (en) * | 2020-12-04 | 2022-06-09 | 日本電気株式会社 | Quantum device and method for producing same |
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