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JPS6471129A - Method and device for cleaning surface of semiconductor substrate - Google Patents

Method and device for cleaning surface of semiconductor substrate

Info

Publication number
JPS6471129A
JPS6471129A JP22644687A JP22644687A JPS6471129A JP S6471129 A JPS6471129 A JP S6471129A JP 22644687 A JP22644687 A JP 22644687A JP 22644687 A JP22644687 A JP 22644687A JP S6471129 A JPS6471129 A JP S6471129A
Authority
JP
Japan
Prior art keywords
vessel
controller
semiconductor substrate
evacuation
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22644687A
Other languages
Japanese (ja)
Other versions
JPH0638409B2 (en
Inventor
Shigeyuki Sugito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP22644687A priority Critical patent/JPH0638409B2/en
Publication of JPS6471129A publication Critical patent/JPS6471129A/en
Publication of JPH0638409B2 publication Critical patent/JPH0638409B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To improve a cleaning effect, and to clean the surface of a semiconductor substrate by evacuating the inside of a vessel having required strength with respect to both vacuum resistance and high pressure resistance while heating the inside of the vessel and pressuring the inside of the vessel at atmospheric pressure or higher. CONSTITUTION:A semiconductor substrate 5 is installed to a substrate installing section 3, and the inside of a vacuum vessel 1 is evacuated by a pump 8 for evacuation. The installing section 3 is set at 200 deg.C by a heater 2 and a temperature controller 4. Heating and evacuation are continued for twenty min, conduction to the heater 2 is stopped, only evacuation is continued, and the inside of the vessel 1 is exhausted up to 10<-7>-10<-8>Torr. An on-off valve 6 is closed, and nitrogen gas is introduced into the vessel 1. When the inside of the vessel 1 reaches atmospheric pressure, a sequence-controller 21 receives a signal from a pressure sensor 14 and a mass flow-controller. 17 and a low-pressure gas supply valve 18 are closed by the sequence-controller 21, and a high-pressure gas supply valve 20 is opened. Accordingly, the surface of the substrate 5 is cleaned.
JP22644687A 1987-09-11 1987-09-11 Method and apparatus for cleaning surface of semiconductor substrate Expired - Lifetime JPH0638409B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22644687A JPH0638409B2 (en) 1987-09-11 1987-09-11 Method and apparatus for cleaning surface of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22644687A JPH0638409B2 (en) 1987-09-11 1987-09-11 Method and apparatus for cleaning surface of semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS6471129A true JPS6471129A (en) 1989-03-16
JPH0638409B2 JPH0638409B2 (en) 1994-05-18

Family

ID=16845227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22644687A Expired - Lifetime JPH0638409B2 (en) 1987-09-11 1987-09-11 Method and apparatus for cleaning surface of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPH0638409B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174720A (en) * 1989-12-04 1991-07-29 Tokyo Electron Sagami Ltd Processing method and processing apparatus using this method
JPH04252045A (en) * 1991-01-28 1992-09-08 Nec Corp Evaluation of semiconductor element manufacturing process
JPH0677134A (en) * 1992-08-26 1994-03-18 Nec Kansai Ltd Vacuum heating method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03174720A (en) * 1989-12-04 1991-07-29 Tokyo Electron Sagami Ltd Processing method and processing apparatus using this method
JPH04252045A (en) * 1991-01-28 1992-09-08 Nec Corp Evaluation of semiconductor element manufacturing process
JPH0677134A (en) * 1992-08-26 1994-03-18 Nec Kansai Ltd Vacuum heating method

Also Published As

Publication number Publication date
JPH0638409B2 (en) 1994-05-18

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