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JPS6467922A - Method of gettering semiconductor device - Google Patents

Method of gettering semiconductor device

Info

Publication number
JPS6467922A
JPS6467922A JP22473087A JP22473087A JPS6467922A JP S6467922 A JPS6467922 A JP S6467922A JP 22473087 A JP22473087 A JP 22473087A JP 22473087 A JP22473087 A JP 22473087A JP S6467922 A JPS6467922 A JP S6467922A
Authority
JP
Japan
Prior art keywords
substrate
ultrasonic
damage
semiconductor device
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22473087A
Other languages
Japanese (ja)
Other versions
JPH0650739B2 (en
Inventor
Yoshiaki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP22473087A priority Critical patent/JPH0650739B2/en
Publication of JPS6467922A publication Critical patent/JPS6467922A/en
Publication of JPH0650739B2 publication Critical patent/JPH0650739B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To maintain the cleanness of a semiconductor device in the process of forming a gettering source by treating a semiconductor substrate by irradiating it with ultrasonic waves to introduce an ultrasonic damage, and then forming a crystal defect in the rear face of the substrate by an oxidation, an impurity diffusion or the like. CONSTITUTION:A P-well 2 is formed on an N-type silicon substrate 1, and the substrate 1 is covered with a rubber photoresist 3. After the substrate 1 is dipped in pure water 10 of a treating tank 11, an ultrasonic vibrator 13 is driven to wash the substrate 1 by an ultrasonic wave while fluctuating the substrate 1 so as to improve the uniformity of an ultrasonic damage. The damage is introduced by a cavitation effect to the rear side of the substrate 1 by means of this ultrasonic wave cleaning. The photoresist 3 on the substrate 1 is removed, and a field oxide film 4 is selectively formed by a thermal oxidizing method in a hydrogen and oxygen gas atmosphere.
JP22473087A 1987-09-08 1987-09-08 Gettering method of semiconductor device Expired - Lifetime JPH0650739B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22473087A JPH0650739B2 (en) 1987-09-08 1987-09-08 Gettering method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22473087A JPH0650739B2 (en) 1987-09-08 1987-09-08 Gettering method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS6467922A true JPS6467922A (en) 1989-03-14
JPH0650739B2 JPH0650739B2 (en) 1994-06-29

Family

ID=16818344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22473087A Expired - Lifetime JPH0650739B2 (en) 1987-09-08 1987-09-08 Gettering method of semiconductor device

Country Status (1)

Country Link
JP (1) JPH0650739B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01143218A (en) * 1987-11-28 1989-06-05 Toshiba Corp Processing of semiconductor substrate
US7666761B2 (en) 2004-03-25 2010-02-23 Elpida Memory, Inc. Semiconductor device and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01143218A (en) * 1987-11-28 1989-06-05 Toshiba Corp Processing of semiconductor substrate
US7666761B2 (en) 2004-03-25 2010-02-23 Elpida Memory, Inc. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JPH0650739B2 (en) 1994-06-29

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