JPS57177530A - Processing of semiconductor wafer - Google Patents
Processing of semiconductor waferInfo
- Publication number
- JPS57177530A JPS57177530A JP6246181A JP6246181A JPS57177530A JP S57177530 A JPS57177530 A JP S57177530A JP 6246181 A JP6246181 A JP 6246181A JP 6246181 A JP6246181 A JP 6246181A JP S57177530 A JPS57177530 A JP S57177530A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- crystal defect
- constitution
- damage
- defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000007547 defect Effects 0.000 abstract 5
- 239000013078 crystal Substances 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000002344 surface layer Substances 0.000 abstract 2
- 230000001627 detrimental effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 230000008646 thermal stress Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To properly control the generation of a crystal defect at the deepest part of the wafer by a method wherein a heat treatment is performed after damage has been given on the surface of the wafer from outside. CONSTITUTION:When the damage 2 has been formed on the surface layer by irradiating an ion beam on the element forming surface alone of an Si wafer 1 and a thermal oxide film 3 has been formed, the excessive defect 2 on the surface layer is diffused into the interior and a crystal defect 4 is formed. Subsequently, an FET is formed using the method commonly in use. According to this constitution, the wafer can be formed properly by controlling the crystal defect in the deep part of the wafer, the detrimental impurities and the crystal defects are gathered from the active region where a semiconductor element will be formed, and at the same time, the plastic deformation of the wafer due to the thermal stress generated while a heat treatment is performed can be prevented without fail.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6246181A JPS57177530A (en) | 1981-04-27 | 1981-04-27 | Processing of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6246181A JPS57177530A (en) | 1981-04-27 | 1981-04-27 | Processing of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57177530A true JPS57177530A (en) | 1982-11-01 |
Family
ID=13200861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6246181A Pending JPS57177530A (en) | 1981-04-27 | 1981-04-27 | Processing of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57177530A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4885257A (en) * | 1983-07-29 | 1989-12-05 | Kabushiki Kaisha Toshiba | Gettering process with multi-step annealing and inert ion implantation |
| US5098852A (en) * | 1989-07-05 | 1992-03-24 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device by mega-electron volt ion implantation |
| US5635414A (en) * | 1995-03-28 | 1997-06-03 | Zakaluk; Gregory | Low cost method of fabricating shallow junction, Schottky semiconductor devices |
| JP2015023039A (en) * | 2013-07-16 | 2015-02-02 | 住友重機械工業株式会社 | Method and apparatus of manufacturing semiconductor device |
| JP2015095534A (en) * | 2013-11-12 | 2015-05-18 | 住友重機械工業株式会社 | Method for manufacturing semiconductor device and device for manufacturing semiconductor |
-
1981
- 1981-04-27 JP JP6246181A patent/JPS57177530A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4885257A (en) * | 1983-07-29 | 1989-12-05 | Kabushiki Kaisha Toshiba | Gettering process with multi-step annealing and inert ion implantation |
| US5098852A (en) * | 1989-07-05 | 1992-03-24 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device by mega-electron volt ion implantation |
| US5635414A (en) * | 1995-03-28 | 1997-06-03 | Zakaluk; Gregory | Low cost method of fabricating shallow junction, Schottky semiconductor devices |
| JP2015023039A (en) * | 2013-07-16 | 2015-02-02 | 住友重機械工業株式会社 | Method and apparatus of manufacturing semiconductor device |
| JP2015095534A (en) * | 2013-11-12 | 2015-05-18 | 住友重機械工業株式会社 | Method for manufacturing semiconductor device and device for manufacturing semiconductor |
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